CN104130717B - A kind of solar silicon wafers lapping liquid formula - Google Patents
A kind of solar silicon wafers lapping liquid formula Download PDFInfo
- Publication number
- CN104130717B CN104130717B CN201410387363.5A CN201410387363A CN104130717B CN 104130717 B CN104130717 B CN 104130717B CN 201410387363 A CN201410387363 A CN 201410387363A CN 104130717 B CN104130717 B CN 104130717B
- Authority
- CN
- China
- Prior art keywords
- silicon wafers
- lapping liquid
- solar silicon
- liquid formula
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000007788 liquid Substances 0.000 title claims abstract description 13
- 235000012431 wafers Nutrition 0.000 title claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000003082 abrasive agent Substances 0.000 claims abstract description 3
- 239000012153 distilled water Substances 0.000 claims abstract description 3
- -1 polysiloxane Polymers 0.000 claims description 5
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 2
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 229940124274 edetate disodium Drugs 0.000 claims description 2
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 2
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- 230000003670 easy-to-clean Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000002738 chelating agent Substances 0.000 abstract description 3
- 230000003750 conditioning effect Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000012466 permeate Substances 0.000 abstract description 3
- 229920002545 silicone oil Polymers 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 230000008719 thickening Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ONJQDTZCDSESIW-UHFFFAOYSA-N polidocanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ONJQDTZCDSESIW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses a kind of solar silicon wafers lapping liquid formula, comprises abrasive material 5%��25%, organic silicone oil 1%��5%, dispersion permeate agent 3%��8%, thickening material 1%��10%, metal chelator 0.1%��1%, PH conditioning agent, distilled water. Solar silicon wafers lapping liquid provided by the invention, has nonferromagnetic substance good, easy to clean, and stable performance, is convenient to standing storage, economic excellent performance and non-secondary pollution.
Description
Technical field:
The present invention relates to solar silicon wafers field, in particular to a kind of solar silicon wafers lapping liquid formula.
Background technology:
Current integrated circuit technique has obtained and has developed rapidly, and becomes one of industry the most high-new and the hugest in the world. In microelectronic technique, from the polishing finally of the drawing of silicon rod, section, abrasive disc, all produce with a large amount of mechanical processing process and a large amount of heats, thus in silicon chip, produce a large amount of mechanical stresses and thermal stresses. Owing to the surface tension of hard brittle material is big and the accumulation of preceding processes stress, adding violent grinding machinery effect, make silicon chip surface very easily produce crackle, serious also can causing collapses limit, fragment, and subsequent technique causes severe impact. Abrasive disc occupies critical role in the machine-shaping process of silicon chip, it is the first time mechanical workout of silicon chip surface after section, for removing the relief lines of silicon chip surface and uneven, is that surface working damage reaches consistent, making it in chemical corrosion process, surface corrosion speed reaches evenly consistent. Many ammonia 19-C of American invention is the suspension grinding fluid that sales volume is maximum in the world. But many ammonia-19C are expensive, viscosity is big, and surface adsorption is than serious, it is not easy to clean, causing abrasive disc to clean rear surface and piebald occur, CN1872930A provides a kind of grinding fluid for silicon chip, and this invention stability is poor, can only be now with the current, it is long placed in perishable, and cleaning capacity is weak.
Summary of the invention:
Goal of the invention: for defect of the prior art, it is provided that a kind of stable performance, economic, ground effect is excellent, solar silicon wafers lapping liquid easy to clean.
For achieving the above object, a kind of solar silicon wafers lapping liquid formula, adopts following technical formula: comprise abrasive material 5%��25%, organic silicone oil 1%��5%, dispersion permeate agent 3%��8%, thickening material 1%��10%, metal chelator 0.1%��1%, PH conditioning agent, distilled water.
Described organic silicone oil is amido silicon oil aminoethyl imines propyl group polysiloxane;
Described dispersion permeate agent selects fatty alcohol-polyoxyethylene ether AEO-9, AEO-15 or its mixing;
Described thickening material is carboxymethyl hydroxypropyl cellulose;
Described metal chelator EDETATE DISODIUM;
Described PH conditioning agent selects ammonia or organic amine base solution, particularly ammoniacal liquor, diethanolamine solution;
According to above technical scheme, it is possible to realize following useful effect: solar silicon wafers lapping liquid provided by the invention, has nonferromagnetic substance good, easy to clean, and stable performance, is convenient to standing storage, economic excellent performance and non-secondary pollution.
Embodiment:
Below in conjunction with embodiment the present invention done and illustrate in detail further, but the scope of protection of present invention is not limited to the scope that embodiment represents.
Embodiment 1:
The formula of a kind of solar silicon wafers lapping liquid:
Above-mentioned is mass ratio.
During use, by above-mentioned grinding fluid dilution 100 times, grinding 10 minutes on shredder, clean with water after grinding, silicon chip surface is smooth bright and clean, and Flatness is good, and without piebald, and lapping liquid places 1 year, and color is yellow to be become, and group part is stable.
Embodiment 2:
The formula of a kind of solar silicon wafers lapping liquid:
Above-mentioned is mass ratio.
Embodiment 3:
The formula of a kind of solar silicon wafers lapping liquid:
Above-mentioned is mass ratio.
Claims (1)
1. a solar silicon wafers lapping liquid, it is characterised in that, adopt following technical formula:
Abrasive material 15%
Aminoethyl imines propyl group polysiloxane 3%
Fatty alcohol-polyoxyethylene ether AEO-95%
Carboxymethyl hydroxypropyl cellulose 6%
EDETATE DISODIUM 0.3%
Ammoniacal liquor 15%
Distilled water surplus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410387363.5A CN104130717B (en) | 2014-08-07 | 2014-08-07 | A kind of solar silicon wafers lapping liquid formula |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410387363.5A CN104130717B (en) | 2014-08-07 | 2014-08-07 | A kind of solar silicon wafers lapping liquid formula |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104130717A CN104130717A (en) | 2014-11-05 |
| CN104130717B true CN104130717B (en) | 2016-06-08 |
Family
ID=51803581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410387363.5A Expired - Fee Related CN104130717B (en) | 2014-08-07 | 2014-08-07 | A kind of solar silicon wafers lapping liquid formula |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104130717B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106181793A (en) * | 2016-07-12 | 2016-12-07 | 苏州普茨迈精密设备有限公司 | Abrasive fluid elastic grinding material formula and fabrication and processing technique |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008130988A (en) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | Polishing composition and polishing method |
| CN101451046B (en) * | 2008-12-30 | 2012-10-10 | 清华大学 | Polishing composition for silicon wafer polishing |
| CN108276915A (en) * | 2010-12-10 | 2018-07-13 | 巴斯夫欧洲公司 | Aqueous polishing composition and method for chemically-mechanicapolish polishing the substrate for including silicon oxide dielectric and polysilicon film |
| CN102311718B (en) * | 2011-04-26 | 2014-04-30 | 东莞市安美润滑科技有限公司 | Aqueous grinding fluid applied to super precision grinding of hard and brittle materials and application method thereof |
| KR101983868B1 (en) * | 2011-10-24 | 2019-05-29 | 가부시키가이샤 후지미인코퍼레이티드 | Composition for polishing purposes, polishing method using same, and method for producing substrate |
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2014
- 2014-08-07 CN CN201410387363.5A patent/CN104130717B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN104130717A (en) | 2014-11-05 |
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| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Yunjia Inventor after: Xu Jun Inventor before: Xu Jun |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU JUN TO: WANG YUNJIA XU JUN |
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Effective date of registration: 20161019 Granted publication date: 20160608 |
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Date of cancellation: 20170419 Granted publication date: 20160608 |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160608 Termination date: 20180807 |