CN104592896A - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
- Publication number
- CN104592896A CN104592896A CN201410852464.5A CN201410852464A CN104592896A CN 104592896 A CN104592896 A CN 104592896A CN 201410852464 A CN201410852464 A CN 201410852464A CN 104592896 A CN104592896 A CN 104592896A
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- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing liquid
- acid
- sodium
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/02—Light metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
Abstract
The invention discloses a chemical mechanical polishing solution. Based on the total mass, the chemical mechanical polishing solution comprises the following components in percentage by weight: 5-50wt% of oxide polishing particles, 0.1-2wt% of an oxidant, 0.01-2wt% of a chelating agent, 0.01-2wt% of a complexing agent, 0.01-2wt% of a surfactant and the balance of pH regulators and water. According to the chemical mechanical polishing solution disclosed by the invention, high metal transfer efficiency can be achieved; and high metal surface quality is achieved, and the obvious defects such as orange skin, corrosion or scratch and the like are avoided.
Description
Technical field
The present invention relates to a kind of polishing fluid, be specifically related to a kind of chemical mechanical polishing liquid on aluminium, iron and alloy material thereof.
Background technology
The polishing of traditional metallic surface mainly contains several method: mechanical polishing, chemical rightenning and electropolishing.Mechanical polishing removes surface projections and divide by cutting, material surface plastic deformation thus obtain smooth surface, though this method has good flattening effect, but easily causes damage from the teeth outwards.Chemical rightenning is that the feature utilizing chemical mediator optimum solvation surface projections to divide obtains flat surface, this method surface not damaged, but flattening effect is good not.Electropolishing ultimate principle and chemical rightenning similar.These finishing methods can meet the demand of the most surfacing of metalwork, but for the higher application of ask for something then not enough, need the method for applied chemistry mechanical polishing.
Chemical Mechanical Polishing Technique is mutually worked in coordination with by the mechanical effect of abrasive material and the chemical action of chemical composition to obtain super smooth surface.Chemical Mechanical Polishing Technique is very important flattening surface technology, is widely used in the preparation of the materials and devices such as the preparation of integrated circuit (IC) chip, silicon wafer polishing, sapphire wafer, SiC wafer, metal decking.Improve constantly polishing efficiency and surface quality is chemical Mechanical Polishing Technique main development direction.Chemical Mechanical Polishing Technique is mutually worked in coordination with by the mechanical effect of abrasive material and the chemical action of chemical composition to obtain super smooth surface, and wherein abrasive material plays an important role for polishing efficiency.
Because the performance requriements of integrated circuit (IC) chip field to the surface of material is high, when carrying out polishing for different materials application chemical Mechanical Polishing Technique, the effect of acquisition is also different.The chemical mechanical polishing liquid of different components all finally can affect the performance of material.In prior art in chemical mechanical polishing liquid when applying, in order to reach good quality of finish, its polishing efficiency is still not high, causes to produce delayed and production cost and increase.
Summary of the invention
The object of the present invention is to provide a kind of chemical mechanical polishing liquid, low for overcoming polishing speed in prior art, the problem of polishing effect can not be taken into account.
For achieving the above object, the present invention takes following concrete technical scheme to realize:
A kind of chemical mechanical polishing liquid, in the total mass of described chemical mechanical polishing liquid, described chemical mechanical polishing liquid comprises following component and weight percentage:
Surplus is pH adjusting agent and water.
Preferably, described oxide cmp particle is 10 ~ 45wt%.
Preferably, described sequestrant is 0.03 ~ 0.5wt%.
Preferably, described complexing agent is 0.03 ~ 0.5wt%.
Preferably, described tensio-active agent is 0.1 ~ 1wt%.
Preferably, described oxide cmp particle is selected from colloid silica, and in described colloid silica, the particle size range of silicon-dioxide is 20 ~ 1500nm.Provided by the inventionly comprise dioxide polishing particles for chemical mechanical polishing of metals liquid.Silica dioxide granule can adopt the methods such as ion exchange method, silica flour dissolution method or methyl silicate to prepare, and also buys by commercially available approach and obtains.
Preferably, the particle size range of described silicon-dioxide is 30 ~ 200nm
Preferably, described oxygenant is selected from one or more in hydrogen peroxide, persulphate, periodate, hypochlorite, nitrate, nitrite, percarbonate and perborate.
Preferably, described sequestrant is selected from one or more in nitrilotriacetic acid(NTA), 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylenediamine tetraacetic methyl-phosphorous acid sodium, diethylene triamine pentamethylene phosphonic, the adjacent phenylacetic acid of quadrol two and tripoly phosphate sodium STPP.Sequestrant can with metal A l
3+or Fe
3+plasma forms chelate ring, thus accelerates the removal speed of metallic substance.
Preferably, described complexing agent is selected from one or more in ethylenediamine tetraacetic acid (EDTA), disodium ethylene diamine tetraacetate, tetrasodium ethylenediamine tetraacetate and Seignette salt.Complexing agent can with metal A l
3+or Fe
3+plasma forms complexing ion compound.
Preferably, described tensio-active agent is selected from one or more in Sodium dodecylbenzene sulfonate, polyoxyethylene sodium sulfate, sodium polyacrylate, polyoxyethylene ether phosphate, alkyl alcohol polyoxyethylene ether, cetyl trimethylammonium bromide.Tensio-active agent can be adsorbed by metallic surface, plays the effect on protection surface, can the surface imperfection such as less burn into orange peel.
Preferably, described pH adjusting agent is selected from one or more of nitric acid, phosphoric acid, potassium hydroxide, sodium hydroxide, ammoniacal liquor, hydroxyethyl second diamino, tetramethyl-aqua ammonia and quadrol.PH value all has impact for the stability of polishing speed, surface quality and polishing fluid.
Preferably, the pH of described chemical mechanical polishing liquid is 8 ~ 12.
More preferably, the pH of described chemical mechanical polishing liquid is 8 ~ 12.
The invention also discloses the preparation method of above-mentioned chemical mechanical polishing liquid, for being mixed according to each weight part by each feed composition.
Also disclose in the present invention and a kind ofly prepare the application of chemical mechanical polishing liquid as described above on aluminium, iron and alloy material thereof.
The beneficial effect of chemical mechanical polishing liquid disclosed in the present invention is:
1) high metal removal efficiency;
2) high metallic surface quality, without defects such as obvious orange peel, corrosion pit and scuffings.
Chemical mechanical polishing liquid in the present invention overcomes many disadvantages of the prior art and creative.
Embodiment
The present invention will be described in detail further by the following example, the following example is only used for illustrating the present invention, and scope of the present invention is not imposed any restrictions, the modifications and variations that any person skilled in the art person can realize easily include in the scope of the present invention and claims.
Instrument and the parameter of medal polish test in the present embodiment are as follows:
A. instrument: polishing machine (SPAW32)
B. condition: pressure (Down Force): 1psi
Polishing pad rotating speed (Pad Speed): 60rpm
Rubbing head rotating speed (Carrier Speed): 60rpm
Temperature: 25 DEG C
Polishing fluid flow velocity (Feed Rate): 100ml/min
C. polishing fluid: the polishing fluid of Example gained is tested.
After adopting the SPAW32 polishing machine of Chuan Ji company to carry out polishing to ferroaluminium, utilize AFM atomic force microscope to test the roughness RMS (Root Mean Square) in titanium alloy surface 2 μm × 2 μm of regions, adopt weighting method test polishing speed.
Embodiment 1
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 100nm; Described oxygenant is ammonium persulphate; Described sequestrant is nitrilotriacetic acid(NTA); Described complexing agent is disodium ethylene diamine tetraacetate; Described tensio-active agent is sodium polyacrylate.In the present embodiment, the pH of chemical mechanical polishing liquid is 10, and pH adjusting agent is sodium hydroxide.
Embodiment 2
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 500nm; Described oxygenant is clorox; Described sequestrant is ethylenediamine tetraacetic methyl-phosphorous acid sodium; Described complexing agent is Seignette salt; Described tensio-active agent is alkyl alcohol polyoxyethylene ether.In the present embodiment, the pH of chemical mechanical polishing liquid is 9, and pH adjusting agent is ammoniacal liquor.
Embodiment 3
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 150nm; Described oxygenant is ammonium persulphate; Described sequestrant is diethylene triamine pentamethylene phosphonic; Described complexing agent is ethylenediamine tetraacetic acid (EDTA); Described tensio-active agent is cetyl trimethylammonium bromide.In the present embodiment, the pH of chemical mechanical polishing liquid is 8.5, and pH adjusting agent is ammoniacal liquor.
Embodiment 4
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 50nm; Described oxygenant is hydrogen peroxide; Described sequestrant is tripoly phosphate sodium STPP; Described complexing agent is disodium ethylene diamine tetraacetate; Described tensio-active agent is cetyl trimethylammonium bromide.In the present embodiment, the pH of chemical mechanical polishing liquid is 8.0, and pH adjusting agent is ammoniacal liquor.
Embodiment 5
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 80nm; Described oxygenant is Sodium peroxoborate; Described sequestrant is the adjacent phenylacetic acid of quadrol two; Described complexing agent is disodium ethylene diamine tetraacetate; Described tensio-active agent is cetyl trimethylammonium bromide.In the present embodiment, the pH of chemical mechanical polishing liquid is 10, and pH adjusting agent is quadrol.
Embodiment 6
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 150nm; Described oxygenant is hydrogen peroxide; Described sequestrant is 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid; Described complexing agent is ethylenediamine tetraacetic acid (EDTA); Described tensio-active agent is cetyl trimethylammonium bromide.In the present embodiment, the pH of chemical mechanical polishing liquid is 9, and pH adjusting agent is ammoniacal liquor.
Embodiment 7
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 200nm; Described oxygenant is Sodium Persulfate; Described sequestrant is diethylene triamine pentamethylene phosphonic; Described complexing agent is tetrasodium ethylenediamine tetraacetate; Described tensio-active agent is polyoxyethylene sodium sulfate.In the present embodiment, the pH of chemical mechanical polishing liquid is 10, and pH adjusting agent is ammoniacal liquor.
Embodiment 8
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 200nm; Described oxygenant is hydrogen peroxide; Described sequestrant is the adjacent phenylacetic acid of quadrol two; Described complexing agent is disodium ethylene diamine tetraacetate; Described tensio-active agent is Sodium dodecylbenzene sulfonate.In the present embodiment, the pH of chemical mechanical polishing liquid is 9, and pH adjusting agent is ammoniacal liquor.
Embodiment 9
In the present embodiment, polishing fluid comprises following component and weight part:
Surplus is pH adjusting agent and water.
Wherein, the silica dioxide granule of described oxide cmp particle to be median size be 100nm; Described oxygenant is Sodium Persulfate; Described sequestrant is tripoly phosphate sodium STPP; Described complexing agent is disodium ethylene diamine tetraacetate; Described tensio-active agent is polyoxyethylene sodium sulfate.In the present embodiment, the pH of chemical mechanical polishing liquid is 9, and pH adjusting agent is ammoniacal liquor.
Table 1
| Embodiment | Polishing speed (mg/min) | Roughness RMS (nm) |
| 1 | 1 | 1.22 |
| 2 | 3.6 | 1.57 |
| 3 | 1.3 | 1.89 |
| 4 | 3.3 | 1.58 |
| 5 | 2.8 | 1.60 |
| 6 | 1.8 | 0.97 |
| 7 | 3 | 1.41 |
| 8 | 6.5 | 5.6 |
| 9 | 0.5 | 0.23 |
As can be seen from Table 1, the polishing speed of chemical mechanical polishing pulp provided by the invention to ferroaluminium can be controlled in 0.5mg/min to 6.5mg/min, and surfaceness has been reduced to nm magnitude simultaneously.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a chemical mechanical polishing liquid, is characterized in that, in the total mass of described chemical mechanical polishing liquid, described chemical mechanical polishing liquid comprises following component and weight percentage:
2. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described oxide cmp particle is selected from colloid silica, and in described colloid silica, the particle size range of silicon-dioxide is 20 ~ 1500nm.
3. chemical mechanical polishing liquid as claimed in claim 2, it is characterized in that, the particle size range of described silicon-dioxide is 30 ~ 200nm.
4. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described oxygenant be selected from hydrogen peroxide, persulphate, periodate, hypochlorite, nitrate, nitrite, percarbonate and perborate one or more.
5. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described sequestrant be selected from nitrilotriacetic acid(NTA), 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylenediamine tetraacetic methyl-phosphorous acid sodium, diethylene triamine pentamethylene phosphonic, the adjacent phenylacetic acid of quadrol two and tripoly phosphate sodium STPP one or more.
6. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described complexing agent be selected from ethylenediamine tetraacetic acid (EDTA), disodium ethylene diamine tetraacetate, tetrasodium ethylenediamine tetraacetate and Seignette salt one or more.
7. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described tensio-active agent be selected from Sodium dodecylbenzene sulfonate, polyoxyethylene sodium sulfate, sodium polyacrylate, polyoxyethylene ether phosphate, alkyl alcohol polyoxyethylene ether, cetyl trimethylammonium bromide one or more.
8. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described pH adjusting agent is selected from one or more of nitric acid, phosphoric acid, potassium hydroxide, sodium hydroxide, ammoniacal liquor, hydroxyethyl second diamino, tetramethyl-aqua ammonia and quadrol.
9. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, the pH of described chemical mechanical polishing liquid is 8 ~ 12.
10. prepare the application of chemical mechanical polishing liquid on aluminium, iron and alloy material thereof as described in any one of claim 1 ~ 9 for one kind.
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|---|---|---|---|
| CN201410852464.5A CN104592896A (en) | 2014-12-31 | 2014-12-31 | Chemical mechanical polishing solution |
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|---|---|---|---|
| CN201410852464.5A CN104592896A (en) | 2014-12-31 | 2014-12-31 | Chemical mechanical polishing solution |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105401210A (en) * | 2015-11-30 | 2016-03-16 | 惠州市博美化工制品有限公司 | Environment-friendly stainless steel substrate plating stripping agent |
| CN105970228A (en) * | 2016-05-25 | 2016-09-28 | 深圳市佳欣纳米科技有限公司 | Aluminum alloy polishing solution and preparation method thereof |
| CN106283092A (en) * | 2016-08-05 | 2017-01-04 | 宁波金特信钢铁科技有限公司 | A kind of preparation method of the electric substrate cleaning combination of salt without amino fluoride |
| CN106676561A (en) * | 2016-12-22 | 2017-05-17 | 当涂县宏宇金属炉料有限责任公司 | Surface treatment method of metal part |
| CN107207947A (en) * | 2015-02-24 | 2017-09-26 | 福吉米株式会社 | Composition for polishing and Ginding process |
| CN107880784A (en) * | 2017-12-04 | 2018-04-06 | 苏州市宽道模具机械有限公司 | A kind of high-performance polishing fluid and preparation method thereof |
| CN110270919A (en) * | 2019-06-28 | 2019-09-24 | 大连理工大学 | A kind of rotation cmp method of integral wheel |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN112410787A (en) * | 2020-11-03 | 2021-02-26 | 哈尔滨哈飞航空工业有限责任公司 | Chemical milling solution and method for sheet aluminum alloy part |
| CN114753007A (en) * | 2022-06-15 | 2022-07-15 | 苏州焜原光电有限公司 | Surface treatment method for molecular beam epitaxy InAs substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107207947A (en) * | 2015-02-24 | 2017-09-26 | 福吉米株式会社 | Composition for polishing and Ginding process |
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| CN105401210A (en) * | 2015-11-30 | 2016-03-16 | 惠州市博美化工制品有限公司 | Environment-friendly stainless steel substrate plating stripping agent |
| CN105970228A (en) * | 2016-05-25 | 2016-09-28 | 深圳市佳欣纳米科技有限公司 | Aluminum alloy polishing solution and preparation method thereof |
| CN106283092B (en) * | 2016-08-05 | 2018-06-19 | 宁波金特信钢铁科技有限公司 | A kind of preparation method of no amino fluoride salt electric substrate cleaning combination |
| CN106283092A (en) * | 2016-08-05 | 2017-01-04 | 宁波金特信钢铁科技有限公司 | A kind of preparation method of the electric substrate cleaning combination of salt without amino fluoride |
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| CN107880784A (en) * | 2017-12-04 | 2018-04-06 | 苏州市宽道模具机械有限公司 | A kind of high-performance polishing fluid and preparation method thereof |
| CN110270919A (en) * | 2019-06-28 | 2019-09-24 | 大连理工大学 | A kind of rotation cmp method of integral wheel |
| CN110270919B (en) * | 2019-06-28 | 2021-02-19 | 大连理工大学 | Rotary chemical mechanical polishing method for integral impeller |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN111662641B (en) * | 2020-06-30 | 2021-10-26 | 中国科学院上海微系统与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN112410787A (en) * | 2020-11-03 | 2021-02-26 | 哈尔滨哈飞航空工业有限责任公司 | Chemical milling solution and method for sheet aluminum alloy part |
| CN114753007A (en) * | 2022-06-15 | 2022-07-15 | 苏州焜原光电有限公司 | Surface treatment method for molecular beam epitaxy InAs substrate |
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Application publication date: 20150506 |