SG10201605995SA - Polishing Composition And Method For Producing Semiconductor Substrate - Google Patents

Polishing Composition And Method For Producing Semiconductor Substrate

Info

Publication number
SG10201605995SA
SG10201605995SA SG10201605995SA SG10201605995SA SG10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
polishing composition
producing semiconductor
producing
polishing
Prior art date
Application number
SG10201605995SA
Inventor
Toshihiro Miwa
Hiroyuki Oda
Shinichiro Takami
Shuhei Takahashi
Yutaka Inoue
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG10201605995SA publication Critical patent/SG10201605995SA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201605995SA 2012-02-10 2013-02-05 Polishing Composition And Method For Producing Semiconductor Substrate SG10201605995SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012027495A JP6357296B2 (en) 2012-02-10 2012-02-10 Polishing composition and method for manufacturing semiconductor substrate

Publications (1)

Publication Number Publication Date
SG10201605995SA true SG10201605995SA (en) 2016-09-29

Family

ID=48947473

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201605995SA SG10201605995SA (en) 2012-02-10 2013-02-05 Polishing Composition And Method For Producing Semiconductor Substrate
SG11201404587TA SG11201404587TA (en) 2012-02-10 2013-02-05 Polishing composition and method for producing semiconductor substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201404587TA SG11201404587TA (en) 2012-02-10 2013-02-05 Polishing composition and method for producing semiconductor substrate

Country Status (7)

Country Link
US (1) US20150014579A1 (en)
JP (1) JP6357296B2 (en)
KR (1) KR101965926B1 (en)
DE (1) DE112013000912T5 (en)
SG (2) SG10201605995SA (en)
TW (1) TWI576416B (en)
WO (1) WO2013118710A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015019706A1 (en) * 2013-08-09 2015-02-12 株式会社フジミインコーポレーテッド Method for producing polished object and composition kit for polishing
JP6295052B2 (en) * 2013-09-26 2018-03-14 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, and method for producing silicon wafer
JP6228032B2 (en) * 2014-02-25 2017-11-08 株式会社フジミインコーポレーテッド Method for continuously manufacturing semiconductor substrates
JP6246638B2 (en) * 2014-03-24 2017-12-13 株式会社フジミインコーポレーテッド Polishing method and polishing composition used therefor
JP6357356B2 (en) 2014-06-09 2018-07-11 株式会社フジミインコーポレーテッド Polishing composition
JP6435689B2 (en) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 Abrasive, polishing method, and additive liquid for polishing
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
JP6829191B2 (en) * 2015-05-08 2021-02-10 株式会社フジミインコーポレーテッド Polishing method
CN104999365B (en) * 2015-06-16 2018-02-16 东莞市中微纳米科技有限公司 Sapphire wafer abrasive polishing method
CN106736875B (en) * 2016-11-30 2019-01-11 江苏师范大学 A kind of processing method of sapphire dome
JP6879798B2 (en) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド Polishing composition and polishing method
JP7275025B2 (en) * 2017-03-31 2023-05-17 株式会社フジミインコーポレーテッド Polishing composition
KR20200098573A (en) * 2017-12-22 2020-08-20 닛산 가가쿠 가부시키가이샤 Polishing composition to eliminate ridges around laser marks

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714411B2 (en) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー Composition for fine polishing of wafers
JP2004128069A (en) 2002-09-30 2004-04-22 Fujimi Inc Grinder composition and grinding method using it
JPWO2005029563A1 (en) 2003-09-24 2007-11-15 日本化学工業株式会社 Silicon wafer polishing composition and polishing method
JP5204960B2 (en) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド Polishing composition and polishing method
WO2008117592A1 (en) * 2007-03-26 2008-10-02 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
JP5236283B2 (en) 2007-12-28 2013-07-17 花王株式会社 Polishing liquid composition for hard disk substrate
JP2011171689A (en) * 2009-07-07 2011-09-01 Kao Corp Polishing liquid composition for silicon wafer
WO2011093223A1 (en) * 2010-01-29 2011-08-04 株式会社 フジミインコーポレーテッド Method for reclaiming semiconductor wafer and polishing composition
SG185085A1 (en) * 2010-04-30 2012-12-28 Sumco Corp Method for polishing silicon wafer and polishing liquid therefor
KR101417833B1 (en) * 2010-07-08 2014-08-06 가부시키가이샤 사무코 Method for polishing silicon wafer

Also Published As

Publication number Publication date
US20150014579A1 (en) 2015-01-15
JP6357296B2 (en) 2018-07-11
TWI576416B (en) 2017-04-01
WO2013118710A1 (en) 2013-08-15
JP2013165173A (en) 2013-08-22
SG11201404587TA (en) 2014-10-30
TW201343884A (en) 2013-11-01
KR101965926B1 (en) 2019-04-04
KR20140130156A (en) 2014-11-07
DE112013000912T5 (en) 2014-11-06

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