SG11201403505UA - Method for manufacturing cmp composition and application thereof - Google Patents

Method for manufacturing cmp composition and application thereof

Info

Publication number
SG11201403505UA
SG11201403505UA SG11201403505UA SG11201403505UA SG11201403505UA SG 11201403505U A SG11201403505U A SG 11201403505UA SG 11201403505U A SG11201403505U A SG 11201403505UA SG 11201403505U A SG11201403505U A SG 11201403505UA SG 11201403505U A SG11201403505U A SG 11201403505UA
Authority
SG
Singapore
Prior art keywords
application
cmp composition
manufacturing cmp
manufacturing
composition
Prior art date
Application number
SG11201403505UA
Inventor
Shyam Sundar Venkataraman
Eason Yu-Shen Su
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201403505UA publication Critical patent/SG11201403505UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201403505UA 2011-12-21 2011-12-21 Method for manufacturing cmp composition and application thereof SG11201403505UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2011/055862 WO2013093556A1 (en) 2011-12-21 2011-12-21 Method for manufacturing cmp composition and application thereof

Publications (1)

Publication Number Publication Date
SG11201403505UA true SG11201403505UA (en) 2014-07-30

Family

ID=48667832

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403505UA SG11201403505UA (en) 2011-12-21 2011-12-21 Method for manufacturing cmp composition and application thereof

Country Status (8)

Country Link
US (1) US9157012B2 (en)
EP (1) EP2794733B1 (en)
JP (1) JP6035346B2 (en)
KR (1) KR101931930B1 (en)
CN (1) CN103975001B (en)
SG (1) SG11201403505UA (en)
TW (1) TWI570227B (en)
WO (1) WO2013093556A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103725256A (en) * 2013-12-31 2014-04-16 上海集成电路研发中心有限公司 Grinding particle system and polishing liquid for CMP (Chemical Mechanical Polishing)
JP6243791B2 (en) * 2014-05-09 2017-12-06 信越化学工業株式会社 CMP abrasive, method for producing the same, and substrate polishing method
JP6466974B2 (en) * 2014-06-25 2019-02-06 キャボット マイクロエレクトロニクス コーポレイション Method for producing chemical mechanical polishing composition
JP6170027B2 (en) * 2014-10-09 2017-07-26 信越化学工業株式会社 CMP abrasive, method for producing the same, and substrate polishing method
CN105802506B (en) * 2014-12-29 2020-06-09 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN107533967A (en) * 2015-03-30 2018-01-02 福吉米株式会社 Composition for polishing
JP6951933B2 (en) * 2017-10-10 2021-10-20 花王株式会社 Finish polishing liquid composition for silicon wafer
JP7138477B2 (en) * 2018-05-18 2022-09-16 花王株式会社 Polishing liquid composition
CN114806411B (en) * 2020-12-30 2023-06-02 德米特（苏州）电子环保材料有限公司 Preparation method of zirconia polishing solution

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US5169491A (en) * 1991-07-29 1992-12-08 Micron Technology, Inc. Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques
KR100302671B1 (en) * 1996-07-25 2001-09-22 피. 제리 코더 Chemical mechanical polishing composition and process
US6271123B1 (en) * 1998-05-29 2001-08-07 Taiwan Semiconductor Manufacturing Company Chemical-mechanical polish method using an undoped silicon glass stop layer for polishing BPSG
US6203407B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
JP2008155368A (en) * 1999-06-23 2008-07-10 Jsr Corp Polishing composition and polishing method
US20020197935A1 (en) * 2000-02-14 2002-12-26 Mueller Brian L. Method of polishing a substrate
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6399461B1 (en) * 2001-01-16 2002-06-04 Promos Technologies, Inc. Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions
US6726534B1 (en) * 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
TW543093B (en) * 2001-04-12 2003-07-21 Cabot Microelectronics Corp Method of reducing in-trench smearing during polishing
US7638161B2 (en) 2001-07-20 2009-12-29 Applied Materials, Inc. Method and apparatus for controlling dopant concentration during BPSG film deposition to reduce nitride consumption
KR100518536B1 (en) 2002-08-07 2005-10-04 삼성전자주식회사 Method of planarizing the surface of semiconductor device and semiconductor device manufactured by the same
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
WO2004068570A1 (en) 2003-01-31 2004-08-12 Hitachi Chemical Co., Ltd. Cmp polishing compound and polishing method
TWI415926B (en) * 2003-07-11 2013-11-21 Grace W R & Co Abrasive particles for chemical mechanical polishing
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
JP2006041033A (en) 2004-07-23 2006-02-09 Hitachi Chem Co Ltd Cmp abrasive and polishing method of substrate
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
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US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US20070144915A1 (en) * 2005-12-22 2007-06-28 Applied Materials, Inc. Process and composition for passivating a substrate during electrochemical mechanical polishing
US20070176141A1 (en) 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers
TWI394823B (en) * 2006-01-31 2013-05-01 Cmp abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
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EP2649144A4 (en) * 2010-12-10 2014-05-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
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TWI573864B (en) * 2012-03-14 2017-03-11 卡博特微電子公司 Cmp compositions selective for oxide and nitride with high removal rate and low defectivity

Also Published As

Publication number Publication date
US9157012B2 (en) 2015-10-13
TWI570227B (en) 2017-02-11
CN103975001B (en) 2017-09-01
EP2794733A1 (en) 2014-10-29
KR20140107522A (en) 2014-09-04
EP2794733B1 (en) 2019-05-15
JP2015507356A (en) 2015-03-05
KR101931930B1 (en) 2018-12-24
EP2794733A4 (en) 2015-11-11
US20140326701A1 (en) 2014-11-06
TW201329215A (en) 2013-07-16
WO2013093556A1 (en) 2013-06-27
JP6035346B2 (en) 2016-11-30
CN103975001A (en) 2014-08-06

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