JP2008155368A - Polishing composition and polishing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing composition and a polishing method suitable for chemical mechanical polishing (CMP) of a semiconductor substrate, a semiconductor component such as an inter-layer insulating film, and a recording medium component and an optical component, capable of flattening a surface of a polishing object and speeding-up a polishing speed. <P>SOLUTION: There provided is a polishing composition containing at least abrasives and a polishing assistant agent composed of a cleaning agent for semiconductor parts containing at least two kinds of copolymers out of (a) (co) polymer having carboxylic acid (base), (b) (co) polymer having sulfonic acid (base), and (c) (co) polymer having phosphonic acid (base). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a polishing composition and a polishing method, and more particularly to a polishing composition and a polishing method used for polishing a surface of a semiconductor component such as a semiconductor substrate, a recording medium component, and an optical component.

  Chemical mechanical polishing (CMP) is attracting attention as a new planarization technology in semiconductor device manufacturing processes, and the process can be shortened compared to conventional reflow technologies and etch back technologies such as RIE (reactive ion etching). There is an advantage that good flattening can be realized without being subject to pattern dependency. This type of CMP is applied to, for example, multilevel metal planarization or interlayer insulation film planarization. Conventionally, various methods have been proposed as a substrate cleaning method after chemical mechanical polishing as a step of planarizing an interlayer insulating film. As the most versatile one, there is RCA cleaning often used in the semiconductor manufacturing process. This RCA cleaning includes a cleaning process using a mixture of ammonia, hydrogen peroxide, and water and a cleaning process using a mixture of hydrochloric acid, hydrogen peroxide, and water.

  In addition, etching of the surface of the interlayer insulating film with a dilute hydrofluoric acid solution and a method of performing acid cleaning when using an alkaline abrasive have been proposed. The most frequently used post-treatment of the chemical mechanical polishing process is brush scrub cleaning, for example, SC1 cleaning with an alkaline cleaning solution of 1: 1: 5 ammonia: hydrogen peroxide: water (weight ratio). And removing particles adhering to the substrate surface in the polishing step.

  Furthermore, an aqueous solution of citric acid is used for cleaning metal impurities adsorbed on the substrate surface after CMP, and further an aqueous citric acid solution or ethylenediaminetetraacetic acid (EDTA) is used with hydrogen fluoride. It has been known. A cleaning solution containing an organic acid such as citric acid and a complexing agent is also known. However, in the above cleaning liquid, it is difficult to remove metal impurities such as abrasive particles remaining on the substrate after chemical mechanical polishing to a level that does not cause a problem, and it is necessary to make the concentration high to obtain a cleaning effect, There is a problem that the burden on the environment is large, such as waste liquid treatment.

  Conventionally, as a polishing composition used for chemical mechanical polishing (CMP) employed in a planarization process of semiconductor components such as semiconductor substrates, interlayer insulating films, recording medium components and optical components, For example, a polishing composition in which abrasive grains such as diamond, alumina, SiC and the like of sub-micron to several tens of microns are dispersed in water is known (Patent Document 1: Japanese Patent Laid-Open No. 1-205973, Patent) Document 2: Japanese Patent Laid-Open No. 62-25187, Patent Document 3: Japanese Patent Laid-Open No. 9-143455, etc.). However, when these polishing compositions are used, the dispersibility of polishing abrasive grains and the dispersion removal and prevention of re-adhesion of polishing waste generated by polishing are insufficient, so pits, scratches, Irregularities such as orange peel and cracks are likely to occur, the polishing rate cannot be increased, and the productivity is poor. Further, polishing compositions having a high polishing effect are also known, but since they are expensive, there is a limit to cost reduction.

In recent years, with the development of electronic equipment, there is a demand for higher recording density of magnetic disk recording devices. To increase the density, it is necessary to reduce the flying height of the magnetic head from the magnetic disk. If the flying height is small, if a protrusion is present on the hard disk surface, a head crash may occur and the hard disk or magnetic head may be damaged. Even a minute protrusion that does not lead to a head crash is likely to cause various errors when reading and writing information due to disturbance of the magnetic characteristics of the protrusion. Therefore, in the polishing process of the hard disk substrate, it is important to form a polished surface having excellent smoothness. As a magnetic disk substrate, in addition to a conventional aluminum substrate, a glassy carbon substrate, which is a brittle material, is used. Polishing brittle materials such as a glassy carbon substrate, a glass substrate, and a ceramic substrate at a high polishing rate. However, a relatively inexpensive polishing composition suitable for providing a highly smooth surface has not been provided.
Japanese Patent Laid-Open No. 1-205973 Japanese Patent Laid-Open No. 62-25187 JP-A-9-143455

  The object of the present invention is suitable for chemical mechanical polishing (CMP) of semiconductor parts such as semiconductor substrates and interlayer insulating films, recording medium parts and optical parts, etc., flattening the surface of an object to be polished, and increasing the polishing speed. An object of the present invention is to provide a polishing composition and a polishing method that can be increased.

The present invention comprises at least an abrasive, and (a) a (co) polymer having a carboxylic acid (salt) group,
It contains at least two (co) polymers among (b) a (co) polymer having a sulfonic acid (salt) group and (c) a (co) polymer having a phosphonic acid (salt) group. The present invention relates to a polishing composition comprising a polishing aid comprising a cleaning agent for semiconductor parts.
Here, you may further mix | blend a phosphonic acid compound with the said cleaning agent for semiconductor components.
Moreover, you may mix | blend a solvent with the polishing composition of this invention further.
Furthermore, PH of the polishing composition of the present invention is preferably 1 to 3.
Furthermore, in the polishing composition of the present invention, the total concentration of the components (a) to (c) is preferably 0.1 to 20% by weight.
The polishing composition of the present invention is preferably used for chemical mechanical polishing.
Next, the present invention relates to a polishing method comprising polishing an object to be polished using the above polishing composition.

  The polishing composition of the present invention can be used for chemical components such as semiconductor components such as semiconductor substrates and interlayer insulating films, recording medium components and optical components made of brittle materials such as glassy carbon substrates, glass substrates, and ceramic substrates. Suitable for mechanical polishing (CMP), the surface roughness of the object to be polished is low, and the polishing rate can be increased.

  (A) The (co) polymer having a carboxylic acid (salt) group, which is one of the components of the cleaning agent for semiconductor parts of the present invention, is a (co) polymerization of a monomer having a carboxylic acid (salt) group. Is obtained. Here, the monomer having a carboxylic acid (salt) group is not particularly limited as long as it is a monomer having a carboxylic acid group and having a polymerizable double bond. For example, itaconic acid, itaconic anhydride, (Meth) acrylic acid, maleic acid, maleic anhydride, fumaric acid, fumaric anhydride, citraconic acid, citraconic anhydride, glutaconic acid, vinyl acetic acid, allyl acetic acid, phosphinocarboxylic acid, α-haloacrylic acid, β-carvone Examples thereof include acids or salts thereof, (meth) acrylic acid alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, octyl (meth) acrylate, and the like. Preferably, itaconic acid, itaconic anhydride, acrylic acid, methacrylic acid or salts thereof. These monomers having a carboxylic acid (salt) group and having a polymerizable double bond can be used singly or in combination of two or more.

  A method for producing a (co) polymer from the monomer having a carboxylic acid (salt) group is, for example, as follows. That is, in the presence of a known polymerization initiator such as hydrogen peroxide, sodium persulfate, or potassium persulfate, the monomer component is usually reacted at a reaction temperature of 20 to 200 ° C., preferably 40 to 150 ° C. The polymerization reaction can be carried out for 1 to 20 hours, preferably 1 to 15 hours to produce a (co) polymer. As one prescription, polymerization can be carried out by sequentially adding monomer components used for polymerization. Here, the sequential polymerization means that the monomer component is charged into the polymerization system within a predetermined time at a constant amount per unit time or by changing the addition amount.

  In the above polymerization reaction, a polymerization solvent can be used in order to carry out the reaction smoothly. As this polymerization solvent, water or a mixture of water and an organic solvent that can be mixed with water can be used. Although it will not specifically limit as a specific example of this organic solvent if it can mix with water, For example, tetrahydrofuran, 1, 4- dioxane, alcohol, etc. are mentioned. (A) The weight average molecular weight of the (co) polymer having a carboxylic acid (salt) group is 1,000 to 500,000, preferably 3,000 to 300,000, and more preferably 5,000 to 300,000. If it is less than 1,000, the cleaning effect may not be sufficiently exhibited. On the other hand, if it exceeds 500,000, it will be difficult to handle due to gelation and the like.

  Note that (a) the (co) polymer having a carboxylic acid (salt) group is preferably water-soluble so as to be a cleaning agent for semiconductor parts. In order to make it water-soluble, a (co) polymer having a counter ion of a cationic species may be used. The cationic species is not particularly limited, but hydrogen, alkali metal, alkaline earth metal, ammonia, amine and the like are preferable. Examples of the alkali metal include sodium and potassium; examples of the alkaline earth metal include calcium and magnesium; examples of the amine include methylamine, ethylamine, propylamine, dimethylamine, diethylamine, triethylamine, butylamine dibutylamine, and tributylamine. Examples thereof include polyamines such as alkylamine, ethylenediamine, diethylenetriamine and triethylenetetramine, morpholine, piperidine and the like. Of these, hydrogen, potassium, ammonia, and alkylamine are preferable.

  In order to obtain a (co) polymer (salt) having these cationic species, a monomer having a preferred cationic species may be (co) polymerized, or an acid type monomer (copolymer) may be used. ) After polymerization, it may be neutralized with the corresponding alkali. It is also possible to exchange (co) polymers (salts) with other cationic species by various ion exchange techniques. These cationic species can be used alone or in combination of two or more. The amount of the component (a) used is preferably 5% by weight or more, more preferably 10% by weight or more based on the total components (a) to (c). If it is less than 5% by weight, the ability to remove metal (ions) may be reduced when used as a cleaning agent, and the polishing rate may be reduced when used as an abrasive composition. Absent.

  (B) The (co) polymer having a sulfonic acid (salt) group, which is one of the components of the cleaning agent for semiconductor parts of the present invention, is a fragrance of a base polymer (precursor) containing a diene structure or an aromatic structure. It can be obtained by sulfonation of part or all of the aromatic ring or residual double bond, or hydrogenation after partial or complete hydrogenation of the diene structure. In that case, a known hydrogenation catalyst can be used, and examples thereof include a hydrogenation catalyst and a hydrogenation method as described in JP-A-5-222115. After the hydrogenation of the base polymer, it can be sulfonated by the method described later, but there is no problem even if the base polymer is sulfonated and then hydrogenated.

  The base polymer used in the present invention may be a random type or a block type copolymer such as AB type or ABA type without particular limitation. When a block copolymer is used as the base polymer, a copolymer having a block structure and having a sulfonic acid (salt) group can be obtained. For example, in the case of a styrene-isoprene binary block copolymer, the isoprene unit can be preferentially sulfonated by using a sulfuric anhydride / electron donating compound described later, and isoprene of a styrene-isoprene block copolymer. After hydrogenating the unit, the aromatic ring of styrene is preferentially sulfonated with sulfuric anhydride, whereby a copolymer having a sulfonic acid (salt) group block and a hydrophobic block is obtained.

  Preferred base polymers include, for example, polystyrene, isoprene homopolymer, butadiene homopolymer, styrene-isoprene random copolymer, styrene-isoprene block copolymer, styrene-isoprene-styrene ternary block copolymer, butadiene-styrene. Random copolymers, butadiene-styrene block copolymers, styrene-butadiene-styrene block copolymers, hydrogenated products of these (co) polymers, ethylene-propylene-diene terpolymers, and the like. Preferred are aromatic monomer polymers, aromatic monomer-conjugated diene block copolymers, and more preferred are polystyrene, styrene-isoprene random copolymers, styrene-isoprene block copolymers, and hydrogenated products thereof.

  The (b) (co) polymer having a sulfonic acid (salt) group of the present invention is prepared by subjecting the above base polymer to a known method such as edited by The Chemical Society of Japan, New Experiment Course (Vol. 14, III, 1773), or It is obtained by sulfonation by the method described in, for example, Kaihei No. 2-227403. That is, in the base polymer, a double bond portion in the polymer can be sulfonated using a sulfonating agent. During the sulfonation, the double bond is opened to form a single bond, or a hydrogen atom is replaced with a sulfonic acid group while the double bond remains. When other monomers are used, for example, aromatic units may be sulfonated in addition to the diene unit portion of the double bond portion. In this case, the sulfonating agent is preferably sulfuric anhydride, a complex of sulfuric anhydride and an electron donating compound, sulfuric acid, chlorosulfonic acid, fuming sulfuric acid, bisulfite (Na salt, K salt, Li salt, etc.) Etc. are used.

  Here, as the electron-donating compound, ethers such as N, N-dimethylformamide, dioxane, dibutyl ether, tetrahydrofuran and diethyl ether; amines such as pyridine, piperazine, trimethylamine, triethylamine and tributylamine; dimethyl sulfide, diethyl Sulfides such as sulfide; nitrile compounds such as acetonitrile, ethyl nitrile, propyl nitrile, and the like, and among them, N, N-dimethylformamide and dioxane are preferable.

  The amount of the sulfonating agent is usually 0.2 to 2.0 mol, preferably 0.3 to 1.2 mol in terms of sulfuric anhydride, based on 1 mol of the diene unit in the base polymer. If it is less than mol, it is difficult to obtain a sulfonic acid polymer. On the other hand, if it exceeds 2.0 mol, the amount of the sulfonating agent such as unreacted sulfuric acid increases, and after neutralization with alkali, a large amount of sulfate is produced. Since purity falls, it is not preferable.

  In the sulfonation, a solvent inert to a sulfonating agent such as sulfuric anhydride can be used. Examples of the solvent include halogenated hydrocarbons such as chloroform, dichloroethane, tetrachloroethane, tetrachloroethylene, and dichloromethane; Nitro compounds such as nitromethane and nitrobenzene; and aliphatic hydrocarbons such as liquid sulfur dioxide, propane, butane, pentane, hexane and cyclohexane. These solvents can be used as a mixture of two or more.

  The sulfonation reaction temperature is usually −70 to + 200 ° C., preferably −30 to + 50 ° C. If the temperature is lower than −70 ° C., the sulfonation reaction is slow and is not economical. Reaction is caused, and the product may be blackened or insolubilized, which is not preferable. Thus, an intermediate in which a sulfonating agent such as sulfuric anhydride is bonded to the base polymer (a sulfonate of the base polymer, hereinafter referred to as “intermediate”) is formed.

  In the (co) polymer having a sulfonic acid (salt) group of the present invention, the double bond is opened by allowing water or a basic compound to act on this intermediate, and the sulfonic acid group is bonded. It becomes a single bond or is obtained by replacing a hydrogen atom with a sulfonic acid group while leaving a double bond.

  Examples of the basic compound include alkali metal hydroxides such as sodium hydroxide, potassium hydroxide, and lithium hydroxide; sodium methoxide, sodium ethoxide, potassium methoxide, sodium-t-butoxide, potassium-t-butoxide, and the like. Alkali metal alkoxides; carbonates such as sodium carbonate, potassium carbonate, lithium carbonate; methyl lithium, ethyl lithium, n-butyl lithium, sec-butyl lithium, amyl lithium, propyl sodium, methyl magnesium chloride, ethyl magnesium bromide, propyl magnesium Organometallic compounds such as iodide, diethylmagnesium, diethylzinc, triethylaluminum, triisobutylaluminum; ammonia water, trimethylamine, triethylamino , Tripropylamine, tributylamine, pyridine, aniline, amines such as piperazine; include sodium, lithium, potassium, calcium, a metal compound such as zinc. These basic compounds can be used alone or in combination of two or more. Among these basic compounds, alkali metal hydroxides and ammonia water are preferable, and sodium hydroxide and lithium hydroxide are particularly preferable.

  The amount of the basic compound used is 2 mol or less, preferably 1.3 mol or less with respect to 1 mol of the sulfonating agent used. When the amount exceeds 2 mol, the amount of unreacted basic compound increases, and the product This is not preferable because the purity of the resin decreases. In the reaction of the intermediate and the basic compound, the basic compound can be used in the form of an aqueous solution, or can be used by dissolving in an organic solvent inert to the basic compound. Examples of the organic solvent include the above-mentioned various organic solvents, aromatic hydrocarbon compounds such as benzene, toluene, and xylene; alcohols such as methanol, ethanol, propanol, isopropanol, and ethylene glycol. These solvents can be used as a mixture of two or more.

  When the basic compound is used as an aqueous solution or an organic solvent solution, the concentration of the basic compound is usually 1 to 70% by weight, preferably about 10 to 50% by weight. The reaction temperature is usually from -30 to + 150 ° C, preferably from 0 to + 120 ° C, more preferably from +50 to + 100 ° C, and can be carried out at normal pressure, reduced pressure, or increased pressure. Furthermore, this reaction time is 0.1 to 24 hours normally, Preferably it is 0.5 to 5 hours.

In addition, (b) the (co) polymer having a sulfonic acid (salt) group, which is one of the constituent components of the cleaning agent for semiconductor parts of the present invention, contains a monomer having a sulfonic acid (salt) group. ) Can also be obtained by polymerization. Examples of the monomer having a sulfonic acid (salt) group include isoprene sulfonic acid, (meth) acrylamide-2-methylpropane sulfonic acid, styrene sulfonic acid, methallyl sulfonic acid, vinyl sulfonic acid, allyl sulfonic acid, Amylenesulfonic acid, unsaturated (meth) allyl ether monomer represented by the following general formula (I) [for example, 3-allyloxy-2-hydroxypropanesulfonic acid, 3-metaallyloxy-2-hydroxypropanesulfonic acid ],

[Wherein, R ¹ is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms, a to d are the same or different and each represents 0 or an integer of 1 to 100 (where a + b + c + d = 0 to 100), (OC ₂ H ₄ ) The unit and the (OC ₃ H ₆ ) unit are bonded in any order, and Y and Z are sulfonic acid groups or hydroxyl groups, and at least one of Y and Z is a sulfonic acid group. ], Sulfoethyl (meth) acrylate, conjugated dienesulfonic acid represented by the following general formula (II) (for example, 2-methyl-1,3-butadiene-1-sulfonic acid)

(Wherein R ^{2 to} R ⁷ are a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or —SO ₃ X, where X is a hydrogen atom, a metal atom, or an ammonium group. Or at least one of R ^{2 to} R ⁷ is —SO ₃ X), (meth) acrylamido-2-methylpropanesulfonic acid), 2-hydroxy-3-acrylamidopropanesulfonic acid, and These salts are mentioned. Preferred are isoprene sulfonic acid, (meth) acrylamide-2-methylpropane sulfonic acid and salts thereof. Particularly preferred are isoprene sulfonic acid, (meth) acrylamido-2-methylpropane sulfonic acid, and salts thereof. These sulfonic acid (salt) group-containing monomers can be used singly or in combination of two or more.

  The method for producing the (co) polymer from the monomer (b) having a sulfonic acid (salt) group may be the same as the method for producing the component (a). In addition, (b) the (co) polymer having a sulfonic acid (salt) group is preferably water-soluble so as to be a cleaning agent for semiconductor parts. The same thing as the said (a) component is mentioned. The amount of component (b) used is preferably 5% by weight or more, more preferably 10% by weight, based on the total amount of components (a) to (c). If it is less than 5% by weight, the ability to remove metal (ion) may be lowered when used as a cleaning agent, and scratching may be easily caused when used as an abrasive composition. .

  In addition, (c) a (co) polymer having a phosphonic acid (salt) group, which is one of the components of the semiconductor component cleaning agent of the present invention, is obtained by (co) polymerizing vinylphosphonic acid and its salt. It is done. Here, the vinyl phosphonic acid (salt) can use together 1 type (s) or 2 or more types. Examples of the method for producing the (co) polymer from the (c) phosphonic acid (salt) include the same methods as the method for producing the component (a). In addition, (c) the (co) polymer having a phosphonic acid (salt) group is preferably water-soluble in order to provide a cleaning agent for semiconductor parts. The same thing as the said (a) component is mentioned.

  The amount of component (c) used is preferably 5 to 50% by weight, more preferably 10 to 30% by weight, based on the total components (a) to (c). If it is less than 5% by weight, the ability to remove metal (ion) may decrease when used as a cleaning agent, and the polishing rate may decrease when used as an abrasive composition, which is not preferable. . On the other hand, even if it exceeds 50% by weight, an effect commensurate with it cannot be obtained and it is not economical.

  As the components (a) to (c) of the present invention, preferably, a carboxylic acid polymer (salt) / sulfonic acid polymer (salt) / phosphonic acid polymer (salt), a carboxylic acid polymer (salt) ) / Sulfonic acid polymer (salt), sulfonic acid polymer (salt) / phosphonic acid polymer (salt).

  The cleaning agent for semiconductor parts of the present invention has a concentration of the whole components (a) to (c) in the water and / or hydrophilic organic solvent (hereinafter also referred to as “solvent”) of 0.1 to 20% by weight, particularly It is preferable to dissolve and use it so that it may become 1.0 to 10 weight% preferably. If the concentration is less than 0.1% by weight, the cleaning effect is not sufficiently exerted. On the other hand, if the concentration exceeds 20% by weight, an effect commensurate with the concentration cannot be expected and it is not efficient.

  Of the above solvents, distilled water, deionized water, tap water, industrial water and the like can be appropriately selected as water. Other solvents include alcohol, ether, ketone and the like. Of these, water as a main component, particularly water is preferred. Among the hydrophilic organic solvents, specific examples of alcohols include methanol, ethanol, n-propyl alcohol, i-propyl alcohol, n-butyl alcohol, sec-butyl alcohol, t-butyl alcohol, n-hexyl alcohol, Examples include n-octyl alcohol, ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene monomethyl ether acetate, diacetone alcohol, and the like. . Specific examples of ethers include tetrahydrofuran and dioxane, and specific examples of ketones include acetone, methyl ethyl ketone, methyl isobutyl ketone, and diisobutyl ketone. These hydrophilic organic solvents can be used alone or in combination of two or more.

  It is preferable to further mix a phosphonic acid compound with the semiconductor component cleaning agent of the present invention. Phosphonic acid compounds include phosphonic acid, aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylphosphonic acid, isopropylphosphonic acid, butylphosphonic acid, methylenediphosphonic acid, 1-hydroxyethylidene-1- Diphosphonic acid, 1,1-aminoethanediphosphonic acid, 1,1-hydroxypropanediphosphonic acid, 1,1-aminobutanediphosphonic acid, ethylenediaminetetramethylphosphonic acid, hexamethylenediaminetetramethylphosphonic acid, diethylenetriamine-pentamethylphosphonic acid 2-phosphonoacetic acid, 2-phosphonopropionic acid, 2-phosphonosuccinic acid, 2-phosphonobutane-1,2,4, -tricarboxylic acid and salts thereof. Preferred are phosphonic acid, aminotrimethylene phosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, 2-phosphonobutane-1,2,4, -tricarboxylic acid and salts thereof. The phosphonic acid compound is a low molecular weight compound different from the (co) polymer having the phosphonic acid (salt) group. In addition, the phosphonic acid compound can use together 1 type (s) or 2 or more types.

  The amount of the phosphonic acid compound used is preferably 0.1 to 100% by weight, more preferably 1 to 50% by weight, based on the total amount of the components (a) to (c). When it is used as a cleaning agent if it is less than 0.1% by weight, the ability to remove metal (ion) decreases, and when used as an abrasive composition, a sufficient polishing rate may not be obtained. There is not preferable. On the other hand, even if added over 100% by weight, an effect commensurate with it cannot be obtained.

  In addition to the (co) polymers of the above components (a) to (c), other water-soluble (co) polymers (salts) can be blended in the cleaning agent for semiconductor parts of the present invention. Other water-soluble (co) polymers (salts) include a monomer having a hydroxyl group, a monomer having a skeleton derived from ethylene oxide or propylene oxide, and a monomer containing a nitrogen atom such as an amine or an amide. And those obtained by (co) polymerizing at least one selected from the group of other monomers.

  Examples of the monomer having a hydroxyl group include unsaturated alcohols such as vinyl alcohol, allyl alcohol, methyl vinyl alcohol, ethyl vinyl alcohol, vinyl glycolic acid, hydroxymethyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxy Propyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, glycerol mono (meth) acrylate, glycerol di (meth) acrylate, polytetramethylene glycol mono (meth) acrylate, polytetramethylene glycol Di (meth) acrylate, butanediol mono (meth) acrylate, hexanediol mono (meth) acrylate, pentaerythritol mono Meth) acrylate, hydroxyl group-containing such as hydroxypropyl phenoxyethyl (meth) acrylate (meth) acrylic acid esters. Preferred is hydroxyethyl (meth) acrylate.

As monomers having a skeleton derived from ethylene oxide or propylene oxide, polyoxyethylene monomethacrylate (alkylene oxide 2 to 20 mol adduct), and a compound having a structure represented by the following general formula (III),
^{_{CH 2 = CR 8 -COO- (AO}} ) -R 9 ······ (III)
(Wherein R ⁸ is a hydrogen atom or a methyl group, R ⁹ is an aliphatic group or an aromatic group having 1 to 18 carbon atoms, and A is a methylene group, a propylene group, or a tetramethylene group). It is done. Polyoxyethylene monomethacrylate (ethylene oxide 5 mol adduct) is preferred.

  Examples of the monomer containing a nitrogen atom include (meth) acrylamide, N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, Nn-propyl (meth) acrylamide, and N-isopropyl (meth). Acrylamide, N-dimethyl (meth) acrylamide, N-diethyl (meth) acrylamide, N-di-n-dipropyl (meth) acrylamide, N-methyl-N-ethyl (meth) acrylamide, N-vinylformamide, 2-vinyl Examples include pyridine, 4-vinylpyridine, N-vinylpyrrolidone and the like. Preferred are (meth) acrylamide, dimethyl (meth) acrylamide, and vinyl pyridine.

  Other monomers include aromatic vinyl compounds such as styrene, α-methylstyrene, vinyltoluene, and p-methylstyrene, butadiene, isoprene, 2-chloro-1,3-butadiene, 1-chloro-1,3. -Aliphatic conjugated dienes such as butadiene, vinyl cyanide compounds such as (meth) acrylonitrile, and phosphoric acid compounds other than phosphonic acid. The said monomer can be used 1 type (s) or 2 or more types.

  The method for producing the other water-soluble (co) polymer (salt) is the same as the method for producing the component (a). In addition, the other water-soluble (co) polymer (salt) is preferably water-soluble in order to obtain a semiconductor component cleaning agent. ) The same as for the component. The amount of the other water-soluble (co) polymer (salt) contained in the semiconductor component cleaning agent of the present invention is preferably 30% by weight or less, more preferably based on the total amount of components (a) to (c). Is 20% by weight or less. When it exceeds 30% by weight, the ability to remove metal (ion) and inorganic particles decreases when used as a cleaning agent, and when used as an abrasive composition, there is a decrease in cleaning polishing rate and an increase in scratches. It is not preferable.

  The semiconductor component cleaning agent of the present invention can be used in combination with other known cleaning agent components. Examples of other detergent components include ethylenediaminetetraacetic acid (EDTA), trans-1,2-cyclohexanediaminetetraacetic acid (CyDTA), nitrilotriacetic acid (NTA), diethylenetriaminepentaacetic acid (DTPA), and N- (2-hydroxy). In addition to polyaminocarboxylic acids such as ethyl) ethylenediamine-N, N ′, N′-triacetic acid (EDTA-OH) and salts thereof, oxalic acid, citric acid, gluconic acid, succinic acid, tartaric acid, fumaric acid, Organic acids such as malic acid, pyrophosphoric acid, lactic acid, benzoic acid, hydrogen fluoride, hydrogen peroxide, carbonic acid, hydrochloric acid, perchloric acid, nitric acid, sulfuric acid, sulfurous acid, persulfuric acid, phosphoric acid, phosphorous acid, hypophosphorous acid Examples include inorganic acids such as acids, and organic acids having these as functional groups. In general, these compounds are used in the form of free acids or salts, and do not adversely affect the properties for semiconductor production. Proton types, ammonium salts, amine salts, alkali metals such as lithium, sodium and potassium, magnesium It is preferably used in the form of a salt such as an alkaline earth metal such as calcium, a salt with zinc, aluminum, nickel, iron or the like. Of these, salts of ammonia, amine, potassium and the like are more preferable, and salts with ammonia and potassium are most preferable. These compounds can be used individually by 1 type, and can also be used 2 or more types. Moreover, the usage-amount of these compounds does not have a restriction | limiting in particular, However, Usually, it is 5 times weight or less with respect to the (a)-(c) whole component amount of this invention. In order to improve the cleaning effect, functional water such as various alkaline solutions, ozone water, redox water may be used in combination.

The semiconductor component cleaning agent of the present invention is mainly used for removing metal impurities based on abrasive particles remaining on the semiconductor component after CMP. However, the method of use is not particularly limited, and a known method may be used. Can be adopted. In addition, before or after cleaning using the cleaning agent of the present invention, a known cleaning method such as the use of a known cleaning agent or immersion cleaning, paddle cleaning, spray cleaning, brush cleaning, ultrasonic cleaning, etc. is performed. By doing so, it is also possible to increase the removal efficiency of metal impurities. Although there is no restriction | limiting in particular in PH of the cleaning agent of this invention, Usually, it can be used by 1-12, Preferably it is 2-10, More preferably, it is 3-9. Outside this range, the cleaning ability may decrease and corrosion of the metal part may occur, which is not preferable. The pH can be adjusted by appropriately selecting the type of counter ion species or by adding an acid or a base. For example, the pH can be adjusted by changing the ratio of alkali components such as H ⁺ and ammonia ions (NH ₃ ⁺ ) used as counter ions. The use temperature is usually 5 to 50 ° C.

  The cleaning agent for semiconductor parts of the present invention has a low environmental impact, and after chemical mechanical polishing, CMP abrasive grains such as silica and alumina remaining on the semiconductor parts, metal impurities contained in CMP, or Since it has a cleaning effect on impurities such as Fe, Mn, Al, Ce, Cu, W, and Ti based on metal wiring, it is useful for cleaning semiconductor components such as semiconductor substrates, interlayer insulating films, and metal wiring.

The semiconductor component cleaning agent of the present invention can also be used as a polishing aid in a polishing composition used for polishing the surface of semiconductor components such as semiconductor substrates, recording medium components, and optical components. . As said abrasive | polishing material, what is normally used as an abrasive grain can be used suitably. Examples of the abrasive particle size include diamond particles, alumina particles, silicon carbide (SiC) particles, magnesium oxide particles, cerium oxide particles, zirconium oxide particles, chromia (Cr ₂ O ₃ ) particles, fumed silica particles, colloidal silica particles, and the like. Is mentioned. Examples of polishing for semiconductor substrates, recording medium substrates and optical components include alumina particles, SiC particles, cerium oxide particles, zirconium oxide particles, fumed silica particles, colloidal silica particles, and preferably alumina. Particles, fumed silica particles, and colloidal silica particles. Among the alumina particles, γ-alumina particles, δ-alumina particles, θ-alumina particles, η-alumina particles, and amorphous alumina particles are preferable. These may be used singly or in combination of two or more.

  In general, the abrasive grains include a crushing type obtained by crushing large particles and classifying them to a desired particle size, and a spherical type produced from a colloidal solution. As a pulverization type, for example, in a wet slurry method, pulverization is performed by a fine pulverizer (such as a ball mill), and coarse particles are obtained by gravity sedimentation and centrifugation. In a dry method, the pulverization type is obtained by pulverization and classification using a jet stream. Things. When compared with the same particle size, the crushing type has a larger specific surface area and a higher polishing rate than the spherical type. When polishing an interlayer insulating film or a metal film as the abrasive of the present invention, either type can be used, but a crushing type is preferable.

  The average particle size of the abrasive grains is preferably 0.001 to 10.0 μm, more preferably 0.01 to 5.0 μm, and particularly preferably 0.02 to 3.0 μm. When the thickness is less than 0.001 μm, the polishing rate is remarkably reduced. On the other hand, when the thickness exceeds 10.0 μm, it becomes difficult to maintain the flatness of the surface of the object to be polished. Moreover, it is also possible to use a combination of large and small abrasives. In addition, the said average particle diameter is obtained by measuring the particle diameter obtained by SEM observation and TEM observation, for example.

As for the hardness of the abrasive grains, Knoop hardness (JIS Z2251) is preferably 600 to 10,000, more preferably 1,000 to 5,000, and particularly preferably 1,500 to 3,000. When the Knoop hardness is less than 600, a sufficient polishing rate cannot be obtained, and the productivity is lowered. On the other hand, when it exceeds 10,000, the surface flatness of the object to be polished is lowered and the quality is lowered. The specific surface area of the abrasive grains is preferably 0.1 to 50 m ² / g, and the specific gravity is preferably 2 to 5, and more preferably 3 to 4. A specific gravity within this range is preferable in terms of handling properties, dispersibility during polishing, and recovery and reusability.

  The abrasive is used as a slurry-like polishing composition together with a polishing aid. The blending ratio of the abrasive in the polishing composition can be appropriately selected according to the viscosity of the polishing composition and the quality required for the object to be polished, preferably 0.01 to 40% by weight, More preferably, it is 0.1-35 weight%, Most preferably, it is 1-30 weight%. If it is less than 0.01% by weight, the target polishing characteristics cannot be obtained. On the other hand, if it exceeds 40% by weight, the viscosity of the composition becomes too high.

  The reason why the polishing composition of the present invention contains a polishing aid comprising the semiconductor component cleaning agent of the present invention increases the polishing effect and increases the flatness of the polished surface. That is, when the polishing aid is adsorbed on the polishing scrap generated by polishing, the cohesive force acting between the polishing scraps is reduced, and the polishing scraps are uniformly dispersed in the polishing composition and are removed from the surface of the object to be polished. It is quickly removed and a new surface is always exposed on the surface of the object to be polished. Also, the abrasive is uniformly dispersed and adsorbed on the polishing pad surface by adsorbing the polishing aid, increasing the amount of abrasive used for polishing, and the load applied to each abrasive And the abrasive acts uniformly on the surface of the workpiece. Furthermore, the polishing aid comprising the semiconductor component cleaning agent of the present invention has high stability and can perform polishing treatment even under high pressure conditions, so that the polishing rate can be increased.

  The polishing aid of the present invention comprises (a) a (co) polymer having a carboxylic acid (salt) group, (b) a (co) polymer having a sulfonic acid (salt) group, and (c) a phosphonic acid (salt). It comprises a semiconductor component cleaning agent containing at least two (co) polymers of (co) polymers having a group. The amount of the polishing aid of the present invention used is preferably 0.001 to 10% by weight, more preferably 0.01 to 5% by weight in the polishing composition. If the amount is less than 0.001% by weight, sufficient polishing characteristics may not be obtained. On the other hand, if the amount exceeds 10% by weight, the addition effect is not improved and is not effective.

  The relationship between the blending amount of the abrasive and the polishing aid in the present invention is as follows. The concentration ratio between the abrasive and the polishing aid in the polishing composition [abrasive concentration (wt%) / polishing aid concentration (weight) %)] Is preferably 0.1 / 30 to 40 / 0.01, more preferably 1/20 to 30 / 0.1, and particularly preferably 5/10 to 25/1. When the ratio is less than 0.1 / 30, the polishing effect is lowered. On the other hand, when it exceeds 40 / 0.01, the effect of blending the polishing aid is not sufficiently exhibited.

  The solvent mix | blended with the polishing composition of this invention is the said water and / or a hydrophilic organic solvent. Usually, a polishing aid composed of the above-described cleaning agent for semiconductor parts is mixed with a solvent and abrasive grains to obtain a slurry-like polishing composition. As said solvent, the same thing as what was mentioned as a solvent which melt | dissolves and uses the said washing | cleaning agent for semiconductor components is mentioned. A solvent can be used individually by 1 type or in combination of 2 or more types. The solid content concentration in the polishing composition of the present invention is preferably 1 to 60% by weight, more preferably 5 to 40% by weight, and particularly preferably 10 to 30% by weight. If the solid content concentration is less than 1% by weight, sufficient polishing characteristics may not be obtained. On the other hand, if it exceeds 60% by weight, the addition effect is not improved and is not effective.

  Although there is no restriction | limiting in particular in PH of the polishing composition of this invention, Usually, 1-13, Preferably it is 2-12, More preferably, it can be used by 3-11. Outside this range, the polishing aid becomes unstable, and the polishing ability may be reduced or the metal part may be corroded. The pH can be adjusted in the same manner as the pH of the cleaning agent. In addition to the above-mentioned polishing aid, known additives such as various thickeners, dispersants, and rust inhibitors can be added to the polishing composition of the present invention. These additives are preferably contained in the polishing aid of the present invention in an amount of 0 to 3% by weight.

The polishing composition of the present invention is mainly used for polishing semiconductor parts, recording medium parts and optical parts. Examples of the material of these objects to be polished include, for example, a metal film in which tungsten, copper, aluminum and the like used in a semiconductor manufacturing process are wired, a metal such as an Ni-P plated aluminum alloy, silicon, a glassy carbon material, Examples include brittle materials such as glass and ceramics such as Al ₂ O ₃ .TiC. Examples of the glassy carbon material include those having a structure in which graphite is dispersed in an amorphous carbon matrix.

  Examples of the shapes of the objects to be polished include various shapes such as a disk shape, a plate shape, a slab shape, a prism shape, and a lens shape. For polishing using the polishing composition of the present invention, the object to be polished is roughly polished (lapped) to usually have a surface roughness of 0.01 to 1 μm, preferably 0.05 to 0.5 μm. Use things. In addition, the surface roughness in this invention is centerline average roughness Ra, and is measured using the rank 0 step made by Rank Taylor Hobson.

There is no restriction | limiting in particular as a usage method of the polishing composition of this invention, A well-known method is employable. For example, SPEED
Polishing can be performed by a double-side polishing machine 9B manufactured by FAM Co., Ltd. The processing pressure is usually 10 to 2,000 gf / cm ² , preferably 50 to 500 gf / cm ² , the processing time is usually 0.5 to 150 minutes, preferably 1 to 100 minutes, and the processing temperature is usually It is 5-70 degreeC, Preferably it is 5-50 degreeC. In addition, the hardness of the polishing pad (conforming to JIS K6301) is usually 86 to 99, preferably 88 to 95, because the harder the surface, the higher the flatness of the surface. Examples of the material for the polishing pad include resins such as foamed polyurethane, and resin composites such as polyester nonwoven fabric and polyurethane composites. Furthermore, the lower platen rotation speed is usually 5 to 100 rpm, preferably 10 to 60 rpm, and the polishing composition flow rate is usually 3 to 300 ml / min, preferably 10 to 200 ml / min.

  The polishing composition of the present invention can be used for chemical components such as semiconductor components such as semiconductor substrates and interlayer insulating films, recording medium components and optical components made of brittle materials such as glassy carbon substrates, glass substrates, and ceramic substrates. Suitable for mechanical polishing (CMP), the surface of the object to be polished can be flattened and the polishing rate can be increased. In the present invention, the “substrate” is not limited to a shape having a flat surface portion, but includes a shape having a curved surface portion.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated further more concretely, this invention is not limited to a following example. In the examples,% and parts are based on weight unless otherwise specified. Various measurements in the examples were performed as follows.

Weight average molecular weight Weight average molecular weight (Mw) is obtained by converting the result of determination by gel permeation chromatography (GPC) using a calibration curve prepared using sodium polystyrenesulfonate as a standard sample. Here, the measurement conditions of GPC are as follows.
Column; (1) G3000PWXL [manufactured by Tosoh Corporation]
Column; (2) GMPWXL [manufactured by Tosoh Corporation]
Column; (3) GMPWXL [manufactured by Tosoh Corporation]
The columns are connected in series in the order of (1) to (III), and the sample is introduced from the column (1) side.
Detector: differential refractometer RI-8021 [manufactured by Tosoh Corporation]
Eluent: water / acetonitrile / sodium sulfate = 2,100 / 900/15 (weight ratio)
Flow rate; 1.0 ml / min Temperature; 40 ° C
Sample concentration: 0.2%
Sample injection volume: 400 μl

A copper film wafer with a substrate of a 2.5 inch diameter The surface roughness was 0.1μm by polishing rough polishing with the polishing composition, it was polished by a double-side polishing machine. The surface roughness (centerline average roughness Ra) of the object to be polished was measured using a Taly 0 step manufactured by Rank Taylor Hobson. The processing conditions are as follows.
Double-side polishing machine: Model LGP-510, manufactured by Lapmaster
Processing pressure: 150 gf / cm ²
Processing time: 2 minutes Processing temperature: 25 ° C
Polishing pad hardness: 90 (JIS
(Conforms to K6301)
Lower platen rotation speed: 50rpm
Polishing composition flow rate: 50 ml / min

Polishing Rate The wafer substrate with a copper film was polished under the same conditions as above, and the polishing rate (μm / min) was determined by the following formula (IV).
Polishing rate (μm / min) = [thickness of copper film before polishing (μm) −thickness of copper film after polishing (μm)] / polishing time (min)
(IV)
The thickness (μm) of the copper film was determined by measuring the sheet resistance with a direct current four-probe method using a resistivity measuring machine (manufactured by NPS, model Σ-5), and calculating the sheet resistance value and the copper resistivity. Calculated by the following formula (V).
Copper film thickness (μm) = [sheet resistance (Ω / cm ²
) X Copper resistivity (Ω / cm)] x 10 ⁴ (V)

Scratch number Using an optical microscope, the surface of the substrate polished at a magnification of 50 times was observed every 60 degrees to measure the number of scratches. The depth of the scratch was measured with Zygo manufactured by Zygo Corporation. The evaluation criteria are as follows.
○: Scratches with a depth of 0.05 μm or more are less than 0.5 per field of view.
Δ: 0.5 to 1 scratch having a depth of 0.05 μm or more per field of view.
×: Scratches having a depth of 0.05 μm or more exceed one in one visual field.

Reference example 1
Dissolve 500 g of 20% strength acrylic acid aqueous solution and 14 g of 35% hydrogen peroxide in a 2 liter container with 1,000 g of water and evenly over 10 hours while stirring under reflux. It was dripped. After completion of the dropwise addition, the mixture was kept under reflux for 2 hours and then neutralized with an aqueous ammonia solution to change the counter ion to (NH ₃ ⁺ ) to obtain an acrylic acid polymer ammonium salt (A). The weight average molecular weight of the polymer (salt) was 20,000.

Reference example 2
In Reference Example 1, the same procedure as in Reference Example 1 was carried out except that 500 g of the 20% strength acrylic acid aqueous solution was changed to 500 g of the 20% strength acrylamide-2-methylpropanesulfonic acid aqueous solution. An ammonium salt (B) of a sulfonic acid polymer was obtained. The weight average molecular weight of the polymer (salt) was 18,000.

Reference example 3
It was carried out in the same manner as in Reference Example 1 except that 500 g of 20% strength aqueous acrylic acid solution was changed to 500 g of 20% strength itaconic acid aqueous solution and the counter ion was changed to (H ⁺ ). A polymer (C) was obtained. The weight average molecular weight of the polymer was 3,000.

Reference example 4
In Reference Example 1, the same procedure as in Reference Example 1 was performed except that 500 g of the 20% strength acrylic aqueous solution was changed to 500 g of the 20% strength styrene sulfonic acid aqueous solution and the counter ion was changed to (H ⁺ ). An acid polymer (D) was obtained. The weight average molecular weight of the polymer was 14,000.

Reference Example 5
In Reference Example 1, the same procedure as in Reference Example 1 was carried out except that 500 g of 20% strength aqueous acrylic acid solution was changed to 500 g of 20% strength vinylphosphonic acid aqueous solution and the counter ion was changed to (H ⁺ ). A phosphonic acid polymer (E) was obtained. The weight average molecular weight of the polymer was 3,000.

Reference Example 6
A container having an internal volume of 3 liters was charged with 100 g of a styrene / isoprene (20/80 molar ratio) random copolymer and dissolved in 1 liter of dioxane. After dissolution, anhydrous sulfuric acid / dioxane complex (85 g / 500 g) was dropped into the container while maintaining the internal temperature at 25 ° C., and then stirred at 25 ° C. for 1 hour. Then water and ammonia are added to counter-ion (NH ₃ ⁺
The solvent was removed to obtain an ammonium salt (F) of a sulfonated product of a styrene / isoprene (20/80 molar ratio) random copolymer. The weight average molecular weight of the copolymer (salt) was 20,000.

Test Examples 1-7
The silicon wafer with the SiO ₂ film was immersed in a 3% KOH aqueous solution, a 3% Fe (NO ₃ ) ₂ aqueous solution, and a 3% CuSO ₄ aqueous solution for 3 minutes in order, and washed with light water for contamination treatment. The contaminated silicon wafer with a SiO ₂ film was measured for Cu, Fe, and K concentrations on the wafer surface using a total reflection fluorescent X-ray apparatus (device name: TREX-610T) manufactured by Technos Corporation. The surface concentration of Cu is 100 × 10 ¹⁰ (atoms / cm ² ), and the surface concentration of Fe is 15,000 × 10 ¹⁰ (atoms / cm ^2).
), The surface concentration of K was 90 × 10 ¹⁰ (atoms / cm ² ). Next, the polymers (salts) (A to F) of Reference Examples 1 to 6 are contained at a ratio (ratio) shown in Table 1 at a total concentration of 2% and the phosphonic acid compound shown in Table 1 at a concentration of 0.2%. An aqueous solution was prepared as a washing solution. The concentration shown in Table 1 is the concentration (%) of the cleaning liquid. Contaminated SiO ₂
The silicon wafer with a film was washed in a cleaning solution at 40 ° C. for 3 minutes, washed with water, dried, and then the concentration of Cu, Fe, K on the wafer surface was measured again to evaluate the ability to remove Cu, Fe, K. The results are shown in Table 1.

Comparative Test Example 1
In Test Example 1, the same procedure was carried out except that no phosphonic acid compound was used. The results are shown in Table 1.

Comparative test example 2
In Test Example 7, the same procedure was performed except that the components (a) to (c) of the present invention were not used. The results are shown in Table 1. As shown in Table 1, it can be seen that the cleaning agent of the present invention is superior in Cu, Fe, K removal ability and particle removal ability than the comparative example.

＊１）アミノトリ（メチレンスルホン酸）
＊２）1−ヒドロキシエチリデン−１，１−ジホスホン酸

* 1) Aminotri (methylene sulfonic acid)
* 2) 1-hydroxyethylidene-1,1-diphosphonic acid

Examples 8-14
Table 2 shows alumina abrasive grains (manufactured by Sumitomo Chemical Co., Ltd., trade name: AKP10-α alumina) (purity 99.9%, average particle diameter 1.0 μm, specific surface area 2.0 m ² / g) as an abrasive. Concentration, using 6.7% hydrogen peroxide solution with a concentration of 30% with respect to the polishing composition, the polymers (salts) (A to F) of Reference Examples 1 to 6, and, if necessary, phosphonic acid compounds Were mixed and stirred at a ratio (ratio) shown in Table 2 so that the total concentration was 1% to obtain a polishing composition. The amount shown in Table 2 is the concentration (%) with respect to the polishing composition containing water as a solvent. The PH was 4-10. Using the polishing composition, polishing was performed by a double-side polishing machine. The substrate after polishing was washed with a cleaning solution, and the polished surface was evaluated. The results are shown in Table 2.

Comparative Example 3
In Example 9, it implemented similarly except not using a phosphonic acid compound. The results are shown in Table 2.

Comparative Example 4
In Example 11, it implemented similarly except not using a (co) polymer (salt). The results are shown in Table 2. As shown in Table 2, when the polishing composition of the present invention is used, the polishing rate can be increased while the number of scratches of the object to be polished is low and the flatness is maintained.

＊１）アミノトリ（メチレンスルホン酸）
＊２）1−ヒドロキシエチリデン−１，１−ジホスホン酸

* 1) Aminotri (methylene sulfonic acid)
* 2) 1-hydroxyethylidene-1,1-diphosphonic acid

In the above Examples, when the polishing composition of the present invention was used for polishing, the surface roughness of the object to be polished was low and the polishing rate was increased. Moreover, the polishing composition of the present invention had a stable dispersion of the abrasive, was rich in fluidity, and was excellent in handleability. Furthermore, clogging of the polishing pad was small, and the frequency of cleaning and replacement of the polishing pad was kept low.

Claims (7)

At least an abrasive, and (a) a (co) polymer having a carboxylic acid (salt) group,
It contains at least two (co) polymers among (b) a (co) polymer having a sulfonic acid (salt) group and (c) a (co) polymer having a phosphonic acid (salt) group. A polishing composition comprising a polishing aid comprising a cleaning agent for semiconductor parts.   The polishing composition according to claim 1, further comprising a phosphonic acid compound in the semiconductor component cleaning agent.   The polishing composition according to claim 1 or 2, further comprising a solvent.   Polishing composition as described in any one of Claims 1-3 whose PH is 1-3.   The polishing composition according to any one of claims 1 to 4, wherein the total concentration of the components (a) to (c) is 0.1 to 20% by weight.   The polishing composition according to any one of claims 1 to 5, which is used for chemical mechanical polishing.   A polishing method comprising polishing an object to be polished using the polishing composition according to claim 1.