JP2016035040A - Polishing composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing composition capable of suppressing surface roughness of a nickel-containing material and polishing a nickel-containing material at a high polishing rate.SOLUTION: There is provided a composition for polishing a nickel-containing material which comprises abrasive grains and an organic compound. The organic compound has an oxo acid group containing a phosphorous atom and a hydrophobic group. The oxo acid group containing a phosphorous atom is a phosphine group, a phosphonic acid group or a phosphate group, the hydrophobic group is a substituted/unsubstituted aryl group having 6 to 20 carbon atoms or an alkyl group, and the composition further comprises 0.001 to 2.0 mol/L of an oxidant.EFFECT: Since the etching rate of the nickel-containing material is suppressed, the surface roughness is suppressed and the nickel-containing material is polished at a high polishing rate.SELECTED DRAWING: None

Description

  The present invention relates to a polishing composition, and particularly to a polishing composition suitable for polishing nickel-containing materials.

  Conventionally, the manufacture of members that require gloss on the surface has been performed by plating a nickel-containing material or the like on a mirror-polished substrate.

  For example, in Patent Document 1, a plating layer such as nickel is provided on a base material, black chrome or black nickel is further plated, and the surface of the plating layer is partially made of a powdery abrasive material made of a hard substance. A method is disclosed in which a finish is applied after polishing and forming irregularities.

JP-A-6-270597

  However, when the powdery abrasive described in Patent Document 1 is used or when sandpaper is used, it is difficult to polish a small and curved member such as a metal ornament at a high polishing rate. Further, in the case of polishing with a powdery abrasive, there are problems such as unevenness of the surface is too large and the surface becomes rough.

  Therefore, the present invention provides a polishing composition that can suppress the surface roughness of the nickel-containing material and can polish the nickel-containing material at a high speed.

  In order to solve the above-mentioned problems, the present inventor has intensively studied. As a result, it has been found that the above problem can be solved by a polishing composition containing an organic compound having an oxo acid group containing a phosphorus atom and a hydrophobic group. And based on the said knowledge, it came to complete this invention.

  That is, the present invention is a nickel-containing material polishing composition comprising abrasive grains and an organic compound, wherein the organic compound has an oxo acid group containing a phosphorus atom and a hydrophobic group.

  ADVANTAGE OF THE INVENTION According to this invention, since the etching rate of a nickel containing material is suppressed, surface roughness can be suppressed, and the polishing composition which can polish a nickel containing material at a high polishing rate is provided. .

  The present invention is a nickel-containing material polishing composition comprising abrasive grains and an organic compound, wherein the organic compound has an oxo acid group containing a phosphorus atom and a hydrophobic group. The polishing composition of the present invention having such a configuration can suppress the etching rate of the nickel-containing material, suppress surface roughness, and can polish the nickel-containing material at a high polishing rate.

  Although the detailed reason why the above effects are obtained by using the polishing composition of the present invention is unknown, the following mechanism is presumed.

  The polishing composition according to the present invention is preferably used under acidic conditions, but nickel is a material that is easily dissolved under acidic conditions.

  However, in the organic compound having an oxo acid group containing a phosphorus atom and a hydrophobic group contained in the polishing composition according to the present invention, the portion of the oxo acid group containing a phosphorus atom first forms a complex with the nickel surface. Then, the hydrophobic group portion faces outward with respect to the nickel surface, and a protective film of the hydrophobic group is generated. Thereby, the etching rate of the surface of the nickel-containing material can be suppressed, the surface roughness can be suppressed, and the nickel-containing material can be polished at a high polishing rate.

  In addition, the said mechanism is based on estimation and this invention is not limited to the said mechanism at all.

[Polishing object]
The polishing object of the polishing composition according to the present invention essentially contains a nickel-containing material. The polishing object may further include a material other than nickel.

<Nickel-containing material>
The nickel-containing material is not particularly limited. For example, nickel alone; Ni—Ti, Ni—Zr, Ni—Hf, Ni—V, Ni—Nb, Ni—Ta, Ni—Cr, Ni—Co, Ni— Binary alloys such as Pt, Ni—Pd, Ni—Ir, Ni—Fe, Ni—Mn; Sn—Ni—Cu, Fe—Ni—P, Fe—Cr—Ni (austenitic stainless steel), white (Cu -Ni-Zn alloy) and the like. Moreover, the said nickel containing material may be comprised from two or more among these.

  The polishing object may further include a material other than the nickel-containing material. Examples of other materials include, for example, martensitic stainless steel, brass, beryllium copper, phosphor bronze, titanium, titanium alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, iron, gold, gold alloy, silver, silver alloy, Platinum, platinum alloys, tungsten, hafnium, tantalum, cobalt, palladium, rhodium, ruthenium, iridium, osmium, silicon and other metals or metalloids, oxides, nitrides or carbides of these metals or metalloids; polyacrylic acid Resin particles such as; glass fiber, carbon fiber and the like.

  The nickel-containing material may be formed into the shape of a member by melt molding, press molding, etc., and is formed on the surface of other materials as described above by plating, composite plating, vapor deposition, sputtering, electrostatic coating, etc. It may be. When the film is formed on the surface of another material, electrostatic coating is preferable from the viewpoint of ensuring uniformity of the film thickness. In addition, when the nickel-containing material is formed on the surface of another material, it may be a single layer or a plurality of layers.

  Next, the structure of the polishing composition of the present invention will be described in detail.

[Polishing composition]
The polishing composition according to the present invention contains abrasive grains and an organic compound having an oxo acid group and a hydrophobic group containing a phosphorus atom. The polishing composition according to the present invention can suppress the etching rate of the nickel-containing material by containing an organic compound having an oxo acid group containing a phosphorus atom and a hydrophobic group in addition to abrasive grains, and contains nickel. The material can be polished at a high polishing rate.

《Abrasive grains》
The polishing composition of the present invention contains abrasive grains. The abrasive has an action of mechanically polishing the object to be polished, and improves the polishing rate of the object to be polished by the polishing composition.

  The abrasive used may be any of inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include particles made of metal oxides such as silica, alumina, ceria, titania, silicon nitride particles, silicon carbide particles, and boron nitride particles. Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles. These abrasive grains may be used alone or in combination of two or more. The abrasive grains may be commercially available products or synthetic products.

  Among these abrasive grains, silica and alumina are preferable, silica is more preferable, and colloidal silica is particularly preferable.

(Particle size)
-Primary particle diameter The lower limit of the average primary particle diameter of the abrasive grains is preferably 20 nm or more, more preferably 25 nm or more, and further preferably 30 nm or more. Further, the upper limit of the average primary particle diameter of the abrasive grains is preferably 800 nm or less, more preferably 600 nm or less, and further preferably 300 nm or less.

  Within such a range, the polishing rate of the object to be polished by the polishing composition is improved, and the occurrence of defects on the surface of the object to be polished after polishing with the polishing composition is further suppressed. Can do. In addition, the average primary particle diameter of an abrasive grain is calculated based on the specific surface area of the abrasive grain measured by BET method, for example.

Secondary particle diameter The lower limit of the average secondary particle diameter of the abrasive grains is preferably 25 nm or more, more preferably 30 nm or more, and more preferably 35 nm or more from the viewpoint of improving the polishing rate of the object to be polished. More preferably. In addition, the upper limit of the average secondary particle diameter of the abrasive grains is preferably 1000 nm or less, more preferably 800 nm or less, and more preferably 500 nm or less from the viewpoint of preventing defects on the surface of the polishing object. More preferably.

  The secondary particles referred to here are particles formed by association of abrasive grains in the polishing composition, and the average secondary particle diameter of the secondary particles is measured by, for example, a dynamic light scattering method. be able to.

(aspect ratio)
The upper limit of the aspect ratio of the abrasive grains in the polishing composition according to the present invention is preferably less than 1.5 from the viewpoint of preventing surface roughness of the nickel-containing material due to the shape of the abrasive grains. Is preferably 3 or less, and more preferably 1.2 or less.

  The aspect ratio is an average of values obtained by dividing the length of the longest side of the smallest rectangle circumscribing the image of the abrasive grains by a scanning electron microscope by the length of the shorter side of the same rectangle, It can be obtained using general image analysis software.

(Surface modification)
The abrasive grains may be surface-modified. For example, in normal colloidal silica, the lower the pH of the polishing composition, the lower the value of the zeta potential and the lower the repulsive force between the abrasive grains. On the other hand, abrasive grains that have been surface-modified so that the zeta potential has a relatively large positive or negative value even under acidic conditions are strongly repelled and dispersed well even under acidic conditions. This will improve the storage stability. Such surface-modified abrasive grains can be obtained, for example, by mixing a metal such as aluminum, titanium or zirconium or an oxide thereof with the abrasive grains and doping the surface of the abrasive grains.

-Anionic silica As an abrasive grain contained in the constituent for polish concerning the present invention, anionic silica is especially preferred. Among these, silica in which at least a part of the surface is covered with aluminum and anionic silica in which an organic acid is immobilized on the surface of colloidal silica are preferable.

  In the present invention, “silica in which at least a part of the surface is covered with aluminum” (hereinafter also referred to as Al-coated silica) means that aluminum is present on the silica surface having a site containing a silicon atom having a coordination number of 4. This is a state in which an aluminum atom coordinated with four oxygen atoms is bonded to the silica surface, and a new surface in which the aluminum atom is fixed in a tetracoordinate state is generated. It may also be in a state where a silicon atom present on the silica surface is replaced with an aluminum atom to form a new surface.

  As a method for obtaining such Al-coated silica, for example, a method of adding an aluminate compound such as sodium aluminate to a silica dispersion can be suitably used. This method is described in detail in Japanese Patent No. 3463328 and Japanese Patent Application Laid-Open No. 63-123807, and this description can be applied to the present invention.

  The silica used in the present invention is not particularly limited, and examples thereof include dry silica, silica fume, wet silica, silica gel, and colloidal silica. Colloidal silica is preferable from the viewpoint of dispersibility.

  Another method for obtaining Al-coated silica includes a method of adding aluminum alkoxide to a silica dispersion.

  The aluminum alkoxide used here may be any, but is preferably aluminum isopropoxide, aluminum butoxide, aluminum methoxide, or aluminum ethoxide, and particularly preferably aluminum isopropoxide or aluminum butoxide.

  The Al-coated silica obtained by the above method has aluminosilicate sites generated by the reaction of tetracoordinate aluminate ions with silanol groups on the silica surface, which fixes negative charges and makes particles negative. Gives great zeta potential. Thereby, the Al-coated silica has a feature that it is excellent in dispersibility even under acidic conditions.

  Therefore, it is important that the Al-coated silica produced by the method as described above exists in a state in which aluminum atoms are coordinated to four oxygen atoms.

  In addition, the aluminum atom which four oxygen atoms coordinated in the Al coating | coated silica surface in this invention can be easily confirmed by measuring a zeta potential, for example.

  In the Al-coated silica in the present invention, the amount covered with aluminum is represented by the surface atomic substitution rate of silica ((number of introduced aluminum atoms / number of surface silicon atom sites) × 100 [%]). This surface atom substitution rate is preferably 0.001% to 20%, more preferably 0.01% to 10%, and particularly preferably 0.1% to 5%.

  This surface atomic substitution rate can be appropriately controlled by controlling the amount (concentration) of an aluminate compound, aluminum alkoxide, or the like added to the raw silica dispersion.

  Here, the surface atom substitution rate ((number of introduced aluminum atoms / number of surface silicon atom sites) × 100 [%]) of the Al-coated silica can be determined as follows.

First, of the aluminum compound added to the dispersion, the amount of aluminum compound consumed from the unreacted aluminum compound remaining after the reaction is calculated. Assuming that the consumed aluminum-based compound has reacted 100%, the surface area converted from the diameter of silica, the specific gravity of silica (2.2 g / cm ³ ), and the number of silanol groups per unit surface area (5 to 8 / nm ² ), the surface atom substitution rate can be estimated. The actual measurement is performed by elemental analysis of the obtained Al-coated silica itself, assuming that aluminum is not present inside the particles and spreads uniformly and thinly on the surface, and the surface area / specific gravity of the silica and silanol per unit surface area. Use the radix.

  Next, the organic acid is immobilized on the surface of the colloidal silica by, for example, chemically bonding a functional group of the organic acid to the surface of the colloidal silica. The organic acid cannot be immobilized on the colloidal silica simply by allowing the colloidal silica and the organic acid to coexist. When immobilizing sulfonic acid, which is a kind of organic acid, on colloidal silica, for example, the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003) Can do. Specifically, a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to colloidal silica, and then the sulfonic acid is immobilized on the surface by oxidizing the thiol group with hydrogen peroxide. The colloidal silica thus obtained can be obtained. Alternatively, when carboxylic acid is immobilized on colloidal silica, for example, “Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”, Chemistry Letters, 3, 228-229 ( 2000). Specifically, colloidal silica having a carboxylic acid immobilized on the surface can be obtained by irradiating light after coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica. .

Cationic silica In addition, amino groups are immobilized on the surface of cationic silica or colloidal silica produced by adding a basic aluminum salt or basic zirconium salt, as disclosed in JP-A-4-21422. Cationic silica can also be used as the abrasive.

Alumina Alumina (aluminum oxide) is also preferably used as the abrasive contained in the polishing composition according to the present invention. The type of alumina abrasive grains is not particularly limited, and examples thereof include those made of α-alumina, δ-alumina, θ-alumina, γ-alumina, or κ-alumina. However, in order to polish a crystalline metal compound with a higher polishing efficiency, it is preferable that alumina is mainly composed of α-alumina. Specifically, the alpha conversion rate of alumina in the alumina abrasive grains is preferably 20% or more, more preferably 40% or more, further preferably 60% or more, and 80% or more. It is particularly preferred. The alpha conversion rate of alumina in the alumina abrasive grains is determined from the integrated intensity ratio of the (113) plane diffraction line by X-ray diffraction measurement.

  The alumina abrasive grains may contain an impurity element such as silicon, titanium, iron, copper, chromium, sodium, potassium, calcium, and magnesium. However, the purity of the alumina abrasive grains is preferably as high as possible. Specifically, it is preferably 98% by mass or more, more preferably 99% by mass or more, further preferably 99.5% by mass or more, and more preferably 99.8%. It is at least mass%. As the purity of the alumina abrasive grains increases in the range of 99% by mass or more, impurity contamination on the surface of the object to be polished after polishing with the polishing composition decreases. In this respect, if the purity of the alumina abrasive grains is 99% by mass or more, more specifically 99.5% by mass or more, and more specifically 99.8% by mass or more, the contamination of the surface of the object to be polished by the polishing composition is caused. It can be easily reduced to a level particularly suitable for practical use. In addition, content of the impurity element in an alumina abrasive grain can be calculated from a measured value by an ICP emission spectroscopic analyzer such as ICPE-9000 manufactured by Shimadzu Corporation.

  The manufacturing method of an alumina abrasive grain is not specifically limited. The alumina abrasive grains may be alumina purified from bauxite by the Bayer method, or may be obtained by melt-pulverizing the alumina. Alternatively, it may be alumina obtained by heat treatment of aluminum hydroxide hydrothermally synthesized from an aluminum compound as a raw material, or alumina synthesized from an aluminum compound by a vapor phase method. Alumina synthesized from aluminum compounds is characterized by higher purity than ordinary alumina.

(concentration)
The lower limit of the content of the abrasive grains in the polishing composition according to the present invention is preferably 0.005% by mass or more from the viewpoint of improving the polishing rate of the object to be polished, and 0.5% by mass or more. More preferably, it is more preferably 1% by mass or more, and further preferably 2% by mass or more. Further, the upper limit of the content of the abrasive grains in the polishing composition is 50% by mass or less from the viewpoint of reducing the cost of the polishing composition and suppressing the occurrence of defects on the surface of the polished object after polishing. Is preferable, it is more preferable that it is 30 mass% or less, and it is further more preferable that it is 20 mass% or less.

≪Organic compound having oxo acid group and hydrophobic group containing phosphorus atom≫
The polishing composition according to the present invention includes an organic compound having an oxo acid group containing a phosphorus atom and a hydrophobic group. By including an organic compound having an oxo acid group containing a phosphorus atom and a hydrophobic group, when a nickel-containing material is polished by the polishing composition according to the present invention, the etching rate is suppressed and surface roughness occurs. The nickel-containing material can be polished at a high polishing rate while suppressing the above.

  Examples of the oxo acid group containing a phosphorus atom contained in the organic compound contained in the polishing composition according to the present invention include a phosphinic acid group, a phosphonic acid group, a phosphoric acid group, a phosphinic acid group, a phosphonous acid group, and phosphorous acid. Among them, a phosphinic acid group, a phosphonic acid group, or a phosphoric acid group is preferable, and a phosphonic acid group is more preferable. By having such an oxo acid group containing a phosphorus atom, the occurrence of surface roughness can be suppressed.

  Moreover, the organic compound contained in the polishing composition according to the present invention has a hydrophobic group. In the present specification, the “hydrophobic group” means a group formed of a hydrocarbon such as an alkyl group having 2 or more carbon atoms or a phenyl group. The hydrophobic group is preferably a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted alkyl group having 21 to 20 carbon atoms.

  Examples of the aryl group having 6 to 20 carbon atoms include phenyl group, p-tolyl group, naphthyl group, biphenyl group, fluorenyl group, anthracenyl group, pyrenyl group, azulenyl group, acenaphthylenyl group, terphenyl group, phenanthryl group, etc. Is mentioned.

  Examples of the alkyl group having 2 to 20 carbon atoms include ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, n-pentyl group, isopentyl group, tert -Pentyl group, neopentyl group, 1,2-dimethylpropyl group, n-hexyl group, isohexyl group, 1,3-dimethylbutyl group, 1-isopropylpropyl group, 1,2-dimethylbutyl group, n-heptyl group, 1,4-dimethylpentyl group, 3-ethylpentyl group, 2-methyl-1-isopropylpropyl group, 1-ethyl-3-methylbutyl group, n-octyl group, 2-ethylhexyl group, 3-methyl-1-isopropyl Butyl group, 2-methyl-1-isopropyl group, 1-t-butyl-2-methylpropyl group, n-nonyl group, 3, 5, 5 Trimethylhexyl, n-decyl, isodecyl, n-undecyl, 1-methyldecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl Group, n-octadecyl group, n-nonadecyl group, n-eicosyl group, cyclopentyl group, cyclohexyl group and the like.

  The aryl group or alkyl group may have a substituent. Examples of the substituent include, for example, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a phenyl group, a methylphenyl group, a phenylphenyl group, a methylphenylphenyl group, a cyano group, and a halogen atom. (Fluorine atom, chlorine atom, bromine atom, iodine atom), nitro group and the like. However, the substituent which exists depending on the case does not become the same as the substituted group (the aryl group or the alkyl group). For example, the alkyl group having 1 to 20 carbon atoms is not substituted with an alkyl group having 1 to 10 carbon atoms as a substituent.

  From the viewpoint of polishing rate, the hydrophobic group is more preferably a phenyl group or a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, and more preferably a phenyl group or a substituted or unsubstituted group. These are alkyl groups having 1 to 10 carbon atoms.

  When the hydrophobic group of the organic compound is a group as described above, it becomes easy to form a protective film on the surface of the nickel-containing material, the chemical dissolution of the nickel-containing material is suppressed, and the etching rate is suppressed. . Further, a high polishing rate for the nickel-containing material can be maintained.

  More specific examples of the organic compound include, but are not particularly limited to, for example, dialkyl (aryl) phosphinic acids such as dimethylphosphinic acid, diethylphosphinic acid, diphenylphosphinic acid, phenylmethylphosphinic acid, phenylethylphosphinic acid; Alkyl, arylphosphonic acid such as acid, ethylphosphonic acid, decylphosphonic acid, phenylphosphonic acid, benzylphosphonic acid, 4-methoxyphenylphosphonic acid, propylphosphonic acid or anhydrides thereof; methyl phosphate, ethyl phosphate, phosphorus Phosphoric acid monoesters such as 2-ethylhexyl acid, octyl phosphate, isodecyl phosphate, lauryl phosphate, stearyl phosphate, isostearyl phosphate, and phenyl phosphate; methyl phosphinic acid, ethyl phosphinic acid, phenyl Alkyl (aryl) phosphinic acids such as phosphinic acid; alkyl (aryl) phosphonous acids such as methyl phosphonous acid, ethyl phosphonous acid, phenyl phosphonous acid (but these are tautomeric alkyl ( Aryl) (which may be phosphinic acid); and phosphorous acid monoesters such as methyl phosphite, ethyl phosphite and phenyl phosphite. These organic compounds can be used alone or in combination of two or more.

  Among these, phenylphosphonic acid is preferable from the viewpoint of polishing rate.

  The lower limit of the content of the organic compound in the polishing composition according to the present invention is preferably 0.0001 mol / L or more and 0.001 mol / L or more with respect to the total amount of the composition. More preferably, it is 0.01 mol / L or more. Further, the upper limit of the content of the organic compound in the polishing composition is preferably 10 mol / L or less, more preferably 1 mol / L or less, more preferably 0.5 mol with respect to the total amount of the composition. / L or less is more preferable.

  When the content of the organic compound is within such a range, the etching rate of the nickel-containing material can be sufficiently suppressed, and the nickel-containing material can be polished at a high polishing rate.

  In a more preferred embodiment of the present invention, in addition to the organic compound, hydrogen halide, an organic compound having two or more carboxyl groups in a molecule (provided having an oxo acid group containing a phosphorus atom and a hydrophobic group) At least one selected from the group consisting of organic compounds having no hydrophobic group and having two or more oxo acid groups containing a phosphorus atom in one molecule (hereinafter also simply referred to as additives) ). With such a configuration, the nickel-containing material can be polished at a higher polishing rate.

  Examples of the hydrogen halide include hydrogen fluoride, hydrogen chloride, hydrogen bromide, and hydrogen iodide.

  Examples of organic compounds having two or more carboxyl groups in one molecule include oxalic acid, malonic acid, succinic acid, glutaric acid, gluconic acid, adipic acid, pimelic acid, maleic acid, phthalic acid, fumaric acid, malic acid. , Tartaric acid, citric acid, 2-phosphonbutane-1,2,4-tricarboxylic acid, 2-phosphonbutane-2,3,4-tricarboxylic acid, 1-phosphonoethane-1,2,2-tricarboxylic acid, ethylenediamine disuccinic acid Acid (SS form), ethylenediaminetetraacetic acid, N- (2-carboxylateethyl) -L-aspartic acid, β-alanine diacetic acid, N, N′-bis (2-hydroxybenzyl) ethylenediamine-N, N′-di Acetic acid, diethylenetriaminepentaacetic acid, ethylenediamine-N- (β-oxyethyl) -N, N ′, N′-triacetic acid, 1,2-diaminopropanetetraacetic acid, 1,3-diaminopropanetetraacetic acid, nitrilotriacetic acid, cyclohexanediaminetetraacetic acid, iminodiacetic acid, ethyl etherdiaminetetraacetic acid, glycol etherdiaminetetraacetic acid, ethylenediaminetetrapropionic acid, phenylenediamine Examples include aminopolycarboxylic acids such as tetraacetic acid and diethylenetriaminepentaacetic acid.

  Examples of the organic compound having two or more oxo acid groups having no phosphorus group and containing a phosphorus atom in one molecule include polyphosphoric acid such as pyrophosphoric acid, tripolyphosphoric acid, trimetaphosphoric acid, tetraphosphoric acid, hexametaphosphoric acid; phytin Polyphosphonic acids such as acids; hydroxypolyphosphonic acids such as 1-hydroxyethylidene-1,1-diphosphonic acid; aminotri (methylenephosphonic acid), nitrilotris (methylenephosphonic acid), diethylenediaminepenta (methylenephosphonic acid), diethylenetriaminepenta (Methylenephosphonic acid), bis (hexamethylenetriaminepenta (methylenephosphonic acid), glycine-N, N-bis (methylenephosphonic acid), 1,3-diaminopropanol-N, N, N ′, N′-tetramethylene Phosphonic acid, N, N, N ′, N′− Chi diamine tetrakis (methylene phosphonic acid), 1,3-propylene diamine -N, N, N ', N'- tetramethylenephosphonic acid, and the like.

  Among these additives, from the viewpoint of polishing rate, hydrogen chloride, oxalic acid, phytic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, nitrilotris (methylenephosphonic acid), 2-phosphonbutane-1,2, 4-tricarboxylic acid, N, N, N ′, N′-ethylenediaminetetrakis (methylenephosphonic acid) is more preferred.

  The lower limit of the content of these additives in the polishing composition according to the present invention is preferably 0.0001 mol / L or more and 0.0005 mol / L or more with respect to the total amount of the composition. More preferably, it is 0.001 mol / L or more. Further, the upper limit of the content of the additive in the polishing composition is preferably 1 mol / L or less, more preferably 0.5 mol / L or less, relative to the total amount of the composition. More preferably, it is 1 mol / L or less. When the content of the additive is within such a range, the nickel-containing material can be polished at a higher polishing rate, and aggregation of abrasive grains due to an improvement in electrical conductivity can be prevented.

[Other ingredients]
The polishing composition of the present invention includes other components such as a dispersion medium, a solvent, an oxidizing agent, a pH adjuster, a metal anticorrosive, an antiseptic, an antifungal agent, a water-soluble polymer, and a surfactant as necessary. May further be included. Hereinafter, the other components will be described.

<Dispersion medium or solvent>
The polishing composition of the present invention usually contains a dispersion medium or solvent for dispersing or dissolving each component. As the dispersion medium or solvent, an organic solvent and water are conceivable, and among them, water is preferably included. From the viewpoint of preventing the action of other components from being inhibited, water containing as little impurities as possible is preferable. Specifically, pure water, ultrapure water, or distilled water from which foreign ions are removed through a filter after removing impurity ions with an ion exchange resin is preferable.

<Oxidant>
The polishing composition of the present invention preferably contains an oxidizing agent. The oxidizing agent forms an oxide film on the surface of the nickel-containing material, thereby further suppressing the etching rate of the surface of the nickel-containing material. Specific examples of the oxidizing agent include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, perchloric acid; persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. These oxidizing agents may be used alone or in combination of two or more.

  Among them, persulfate and hydrogen peroxide are preferable because there is no metal contamination, and hydrogen peroxide is particularly preferable.

  The lower limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 0.001 mol / L or more, more preferably 0.01 mol / L or more, and 0.05 mol / L or more. More preferably. As the content of the oxidizing agent increases, the etching rate decreases and the polishing rate increases.

  Moreover, as an upper limit of content (concentration) of an oxidizing agent, it is preferable that it is 10 mol / L or less, It is more preferable that it is 5 mol / L or less, It is further more preferable that it is 3 mol / L or less, 2 mol / L It is particularly preferred that As the content of the oxidizing agent is reduced, excessive oxidation of the surface of the object to be polished can be suppressed, and the reduction in the polishing rate can be suppressed.

<PH adjuster>
The pH of the polishing composition according to the present invention can be adjusted by adding an appropriate amount of a pH adjusting agent if necessary. The pH adjuster may be either acid or alkali, and may be either an inorganic compound or an organic compound. As a result, the polishing rate of the object to be polished, the dispersibility of the abrasive grains, and the like can be controlled. A pH adjuster can be used individually or in mixture of 2 or more types.

  The pH of the polishing composition is adjusted by adjusting the amount of the organic compound having an oxo acid group and a hydrophobic group containing phosphorus atoms, which are essential in the polishing composition according to the present invention, and the above-mentioned additives. May be.

  As the pH adjuster, known acids, bases, or salts thereof can be used. Specific examples of the acid include inorganic acids such as sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid and phosphoric acid; formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid , N-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycol Acids, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid and lactic acid and other carboxylic acids, and methanesulfonic acid, And organic acids such as organic sulfuric acid such as ethanesulfonic acid and isethionic acid.

  Specific examples of the base that can be used as the pH adjusting agent include alkali metal hydroxides or salts, Group 2 element hydroxides or salts, quaternary ammonium hydroxides or salts, ammonia, amines, and the like. Specific examples of the alkali metal include potassium and sodium. Specific examples of the salt include carbonate, hydrogen carbonate, sulfate, acetate, and the like. Specific examples of the quaternary ammonium include tetramethylammonium, tetraethylammonium, tetrabutylammonium and the like.

  The quaternary ammonium hydroxide compound includes quaternary ammonium hydroxide or a salt thereof, and specific examples thereof include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide and the like.

  Specific examples of amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- (β-aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine , Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine and the like. These bases may be used individually by 1 type, and may be used in combination of 2 or more type.

  Among these bases, ammonia, ammonium salts, alkali metal hydroxides, alkali metal salts, quaternary ammonium hydroxide compounds, and amines are preferable. More preferably, ammonia, potassium compound, sodium hydroxide, quaternary ammonium hydroxide compound, ammonium hydrogen carbonate, ammonium carbonate, sodium hydrogen carbonate, and sodium carbonate are applied. Moreover, it is more preferable that the polishing composition contains a potassium compound as a base from the viewpoint of preventing metal contamination. Examples of the potassium compound include potassium hydroxide or salt, and specific examples include potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium sulfate, potassium acetate, potassium chloride and the like.

  The addition amount of the pH adjusting agent is not particularly limited, and is appropriately adjusted so that the polishing composition has a desired pH.

  The lower limit of the pH range of the polishing composition of the present invention is preferably 1 or more from the viewpoint of the dissolution of the polishing object progressing and the polishing rate by the polishing composition improving as the pH increases. More preferably. Further, the upper limit of the pH range is preferably 7 or less, more preferably 5 or less, from the viewpoint of easy handling as the pH is lowered.

<Metal anticorrosive>
The polishing composition of the present invention may contain a metal anticorrosive. By adding a metal anticorrosive to the polishing composition, it is possible to prevent deterioration of the surface condition such as surface roughness of the polished surface by preventing dissolution of the metal.

  The metal anticorrosive that can be used is not particularly limited, but is preferably a heterocyclic compound. The number of heterocyclic rings in the heterocyclic compound is not particularly limited. The heterocyclic compound may be a monocyclic compound or a polycyclic compound having a condensed ring. These metal anticorrosives may be used alone or in combination of two or more. In addition, as the metal anticorrosive, a commercially available product or a synthetic product may be used.

  Specific examples of heterocyclic compounds that can be used as metal anticorrosives include, for example, pyrrole compounds, pyrazole compounds, imidazole compounds, triazole compounds, tetrazole compounds, pyridine compounds, pyrazine compounds, pyridazine compounds, pyridine compounds, indolizine compounds, indoles. Compound, isoindole compound, indazole compound, purine compound, quinolidine compound, quinoline compound, isoquinoline compound, naphthyridine compound, phthalazine compound, quinoxaline compound, quinazoline compound, cinnoline compound, buteridine compound, thiazole compound, isothiazole compound, oxazole compound, iso Examples thereof include nitrogen-containing heterocyclic compounds such as oxazole compounds and furazane compounds.

  More specific examples include pyrazole compounds such as 1H-pyrazole, 4-nitro-3-pyrazolecarboxylic acid, 3,5-pyrazolecarboxylic acid, 3-amino-5-phenylpyrazole, 5 -Amino-3-phenylpyrazole, 3,4,5-tribromopyrazole, 3-aminopyrazole, 3,5-dimethylpyrazole, 3,5-dimethyl-1-hydroxymethylpyrazole, 3-methylpyrazole, 1-methyl Pyrazole, 3-amino-5-methylpyrazole, 4-amino-pyrazolo [3,4-d] pyrimidine, 4-chloro-1H-pyrazolo [3,4-d] pyrimidine, 3,4-dihydroxy-6-methylpyrazolo (3,4-b) -pyridine, 6-methyl-1H-pyrazolo [3,4-b] pyridin-3-amine and the like. It is.

  Examples of imidazole compounds include imidazole, 1-methylimidazole, 2-methylimidazole, 4-methylimidazole, 2-ethyl-4-methylimidazole, 2-isopropylimidazole, benzimidazole, and 5,6-dimethylbenzimidazole. 2-aminobenzimidazole, 2-chlorobenzimidazole, 2-methylbenzimidazole, 2- (1-hydroxyethyl) benzimidazole, 2-hydroxybenzimidazole, 2-phenylbenzimidazole, 2,5-dimethylbenzimidazole, Examples include 5-methylbenzimidazole and 5-nitrobenzimidazole.

  Examples of the triazole compound include, for example, 1,2,3-triazole (1H-BTA), 1,2,4-triazole, 1-methyl-1,2,4-triazole, methyl-1H-1,2, 4-triazole-3-carboxylate, 1,2,4-triazole-3-carboxylic acid, methyl 1,2,4-triazole-3-carboxylate, 1H-1,2,4-triazole-3-thiol, 3,5-diamino-1H-1,2,4-triazole, 3-amino-1,2,4-triazole-5-thiol, 3-amino-1H-1,2,4-triazole, 3-amino- 5-benzyl-4H-1,2,4-triazole, 3-amino-5-methyl-4H-1,2,4-triazole, 3-nitro-1,2,4-triazole, 3-bromo-5 Nitro , 2,4-triazole, 4- (1,2,4-triazol-1-yl) phenol, 4-amino-1,2,4-triazole, 4-amino-3,5-dipropyl-4H-1, 2,4-triazole, 4-amino-3,5-dimethyl-4H-1,2,4-triazole, 4-amino-3,5-dipeptyl-4H-1,2,4-triazole, 5-methyl- 1,2,4-triazole-3,4-diamine, 1H-benzotriazole, 1-hydroxybenzotriazole, 1-aminobenzotriazole, 1-carboxybenzotriazole, 5-chloro-1H-benzotriazole, 5-nitro- 1H-benzotriazole, 5-carboxy-1H-benzotriazole, 5-methyl-1H-benzotriazole, 5,6-dimethyl-1H Benzotriazole, 1- (1 ′, 2′-dicarboxyethyl) benzotriazole, 1- [N, N-bis (hydroxyethyl) aminomethyl] benzotriazole, 1- [N, N-bis (hydroxyethyl) amino Methyl] -5-methylbenzotriazole, 1- [N, N-bis (hydroxyethyl) aminomethyl] -4-methylbenzotriazole, and the like.

  Examples of the tetrazole compound include 1H-tetrazole, 5-methyltetrazole, 5-aminotetrazole, and 5-phenyltetrazole.

  Examples of indazole compounds include, for example, 1H-indazole, 5-amino-1H-indazole, 5-nitro-1H-indazole, 5-hydroxy-1H-indazole, 6-amino-1H-indazole, 6-nitro-1H -Indazole, 6-hydroxy-1H-indazole, 3-carboxy-5-methyl-1H-indazole and the like.

  Examples of indole compounds include 1H-indole, 1-methyl-1H-indole, 2-methyl-1H-indole, 3-methyl-1H-indole, 4-methyl-1H-indole, 5-methyl-1H Indole, 6-methyl-1H-indole, 7-methyl-1H-indole, 4-amino-1H-indole, 5-amino-1H-indole, 6-amino-1H-indole, 7-amino-1H-indole 4-hydroxy-1H-indole, 5-hydroxy-1H-indole, 6-hydroxy-1H-indole, 7-hydroxy-1H-indole, 4-methoxy-1H-indole, 5-methoxy-1H-indole, 6 -Methoxy-1H-indole, 7-methoxy-1H-indole, 4-chloro-1H Indole, 5-chloro-1H-indole, 6-chloro-1H-indole, 7-chloro-1H-indole, 4-carboxy-1H-indole, 5-carboxy-1H-indole, 6-carboxy-1H-indole, 7-carboxy-1H-indole, 4-nitro-1H-indole, 5-nitro-1H-indole, 6-nitro-1H-indole, 7-nitro-1H-indole, 4-nitrile-1H-indole, 5- Nitrile-1H-indole, 6-nitrile-1H-indole, 7-nitrile-1H-indole, 2,5-dimethyl-1H-indole, 1,2-dimethyl-1H-indole, 1,3-dimethyl-1H- Indole, 2,3-dimethyl-1H-indole, 5-amino-2,3-dimethyl-1H Indole, 7-ethyl-1H-indole, 5- (aminomethyl) indole, 2-methyl-5-amino-1H-indole, 3-hydroxymethyl-1H-indole, 6-isopropyl-1H-indole, 5-chloro -2-methyl-1H-indole and the like.

  Among these, preferred heterocyclic compounds are triazole compounds, and in particular, 1H-benzotriazole, 5-methyl-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1- [N, N-bis (hydroxy Ethyl) aminomethyl] -5-methylbenzotriazole, 1- [N, N-bis (hydroxyethyl) aminomethyl] -4-methylbenzotriazole, 1,2,3-triazole, and 1,2,4-triazole Is preferred. Since these heterocyclic compounds have high chemical or physical adsorptive power to the surface of the object to be polished, a stronger protective film can be formed on the surface of the object to be polished. This is advantageous in improving the flatness of the surface of the object to be polished after polishing using the polishing composition of the present invention.

  The lower limit of the content of the metal anticorrosive in the polishing composition is preferably 0.001 g / L or more, more preferably 0.005 g / L or more, and 0.01 g / L or more. Is more preferable. As the content of the metal anticorrosive increases, the dissolution of the metal can be prevented and the level difference elimination can be improved. Further, the upper limit of the content of the metal anticorrosive in the polishing composition is preferably 10 g / L or less, more preferably 5 g / L or less, and further preferably 2 g / L or less. As the content of the metal anticorrosive decreases, the polishing rate increases.

<Surfactant>
A surfactant may be contained in the polishing composition. The surfactant improves the cleaning efficiency after polishing by imparting hydrophilicity to the polished surface after polishing, and can prevent adhesion of dirt and the like. The surfactant may be any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant.

  Specific examples of the anionic surfactant include polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfate ester, alkyl sulfate ester, polyoxyethylene alkyl sulfate, alkyl sulfate, alkylbenzene sulfonic acid, alkyl phosphate ester, polyoxyethylene ester Ethylene alkyl phosphate ester, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, salts thereof and the like are included.

  Specific examples of the cationic surfactant include alkyltrimethylammonium salt, alkyldimethylammonium salt, alkylbenzyldimethylammonium salt, alkylamine salt and the like.

  Specific examples of amphoteric surfactants include alkyl betaines and alkyl amine oxides. Specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkylamine, alkyl alkanolamide, and the like. It is. These surfactants may be used individually by 1 type, and may be used in combination of 2 or more type.

  The lower limit of the content of the surfactant in the polishing composition is preferably 0.0001 g / L or more, and more preferably 0.001 g / L or more. As the surfactant content increases, the cleaning efficiency after polishing is further improved. Moreover, it is preferable that it is 100 g / L or less, and, as for the upper limit of content of surfactant in polishing composition, it is more preferable that it is 10 g / L or less. As the surfactant content decreases, the remaining amount of surfactant on the polished surface after cleaning is reduced.

<Preservatives and fungicides>
Examples of the antiseptic and fungicide that can be added to the polishing composition according to the present invention include 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one. And the like, isothiazoline-based preservatives such as paraoxybenzoates, and phenoxyethanol. These antiseptics and fungicides may be used alone or in combination of two or more.

<Water-soluble polymer>
The polishing composition according to the present invention may contain a water-soluble polymer. By adding a water-soluble polymer or a salt thereof, the dispersion stability of the polishing composition is improved, and the supply of the polishing composition can be stabilized by making the slurry concentration uniform. Moreover, the surface roughness of the object to be polished after polishing with the polishing composition can be further reduced.

  Specific examples of the water-soluble polymer include, for example, polystyrene sulfonate, polyisoprene sulfonate, polyacrylate, polymaleic acid, polyitaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycerin, polyvinyl pyrrolidone, and isoprene sulfonic acid. And acrylic acid copolymer, polyvinylpyrrolidone-polyacrylic acid copolymer, polyvinylpyrrolidone-vinyl acetate copolymer, salt of naphthalenesulfonic acid formalin condensate, diallylamine hydrochloride-sulfur dioxide copolymer, carboxymethylcellulose, Examples include salts of carboxymethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, pullulan, chitosan, and chitosan salts. These water-soluble polymers may be used alone or in combination of two or more.

  The lower limit of the content of the water-soluble polymer in the polishing composition is preferably 0.0001 g / L or more from the viewpoint of further reducing the surface roughness of the polishing surface by the polishing composition, and 0.001 g / L or more is more preferable. Further, the upper limit of the content of the water-soluble polymer in the polishing composition is 100 g / L or less from the viewpoint of reducing the remaining amount of the water-soluble polymer on the polishing surface and further improving the cleaning efficiency. Preferably, it is 10 g / L or less.

[Method for producing polishing composition]
The method for producing the polishing composition of the present invention is not particularly limited, and examples thereof include abrasive grains, organic compounds having an oxo acid group and a hydrophobic group containing a phosphorus atom, and the above additives and anticorrosive agents as necessary. The above components can be obtained by stirring and mixing in a dispersion medium such as water or a solvent.

  Although the temperature at the time of mixing each component is not specifically limited, 10-40 degreeC is preferable and you may heat in order to raise a dissolution rate. Further, the mixing time is not particularly limited.

[Polishing method and substrate manufacturing method]
As described above, the polishing composition of the present invention is suitably used for polishing nickel-containing materials. Therefore, the present invention provides a polishing method for polishing a nickel-containing material with the polishing composition of the present invention. Moreover, this invention provides the manufacturing method of a nickel containing material including the process of grind | polishing a nickel containing material with the said grinding | polishing method.

  As a polishing apparatus, a general polishing apparatus having a polishing surface plate to which a holder for holding an object to be polished and a motor that can change the number of rotations are attached and a polishing pad (polishing cloth) can be attached. Can be used.

  As the polishing pad, a general nonwoven fabric, polyurethane, porous fluororesin, or the like can be used without particular limitation. It is preferable that the polishing pad is grooved so that the polishing liquid accumulates.

  The polishing conditions are not particularly limited. For example, the rotation speed of the polishing platen is preferably 10 to 500 rpm, and the pressure applied to the object to be polished (polishing pressure) is 0.1 to 10 psi (1 psi = 6894.76 Pa). preferable. The method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying with a pump or the like is employed. Although the supply amount is not limited, it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention.

  After the polishing is completed, the object to be polished is washed in running water, and water droplets adhering to the object to be polished are removed by a spin dryer or the like, and dried to obtain a nickel-containing material.

  The present invention will be described in further detail using the following examples and comparative examples. However, the technical scope of the present invention is not limited only to the following examples.

  Each component shown in Tables 3 and 4 was stirred and mixed in water (mixing temperature: about 25 ° C., mixing time: about 10 minutes) to prepare polishing compositions of Examples 1 to 21 and Comparative Examples 1 to 12. .

  In Examples 1-16 and Comparative Examples 1-10, the colloidal silica produced with the following method was used as an abrasive grain. First, colloidal silica is dispersed in water in the range of 1 to 50% by mass, the pH of the dispersion is adjusted to 7 to 11, and then an aqueous sodium aluminate solution is added while stirring near room temperature. Stir for 5-10 hours.

  The sol thus obtained was subjected to ion exchange and ultrafiltration to remove impurities to obtain Al-coated silica. The colloidal silica used at this time has an average primary particle diameter of 60 nm, an average secondary particle diameter of 104 nm, and an aspect ratio of 1.1.

  In Examples 17 to 21 and Comparative Examples 11 to 12, the abrasive grains were α-alumina (α conversion 80%, purity 98%, average primary particle size 180 nm, average secondary particle size 400 nm, aspect ratio 1). .3) was used.

  The pH of the composition was confirmed with a pH meter. The average primary particle diameter of the abrasive grains is calculated from the surface area measurement measured by the BET method, and the average secondary particle diameter of the abrasive grains is measured by a dynamic light scattering type particle diameter measuring apparatus. The aspect ratio of the abrasive grains can be obtained by analyzing an image of the abrasive grains with a scanning electron microscope with image analysis software.

<Polishing speed>
Nickel (size: 32 mm × 32 mm × 1 mm) was polished under the polishing conditions shown in Table 1 using the obtained polishing compositions (Examples 1 to 21, Comparative Examples 1 to 12).

  The polishing rate was determined by dividing the difference in thickness of the nickel-containing material before and after polishing measured by using a sheet resistance measuring instrument based on the direct current four-probe method by the polishing time. The results are shown in Tables 3 and 4.

<Etching rate>
The etching rate was measured using the polishing composition. The etching rate was determined from the weight reduction rate before and after immersing nickel (size: 32 mm × 32 mm × 1 mm) in the polishing composition under the conditions of Table 2 using the specific gravity (8.908) of the nickel-containing material.

  As shown in Tables 3 and 4, the polishing rates of Examples 1 to 21 were significantly higher than those of Comparative Examples 1 to 12. Moreover, the etching rate at the time of using the composition of Examples 1-21 is low, and can suppress the roughness of the surface of a nickel containing material. From this result, it was found that the nickel-containing material can be polished at a high polishing rate without roughening the surface of the nickel-containing material in the compositions of the examples.

Claims (10)

Containing abrasive grains and organic compounds,
The composition for polishing a nickel-containing material, wherein the organic compound has an oxo acid group containing a phosphorus atom and a hydrophobic group.   The nickel-containing material polishing composition according to claim 1, wherein the oxo acid group containing a phosphorus atom is a phosphinic acid group, a phosphonic acid group, or a phosphoric acid group.   3. The hydrophobic group according to claim 1, wherein the hydrophobic group is a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms. Nickel-containing material polishing composition.   The nickel-containing material polishing composition according to any one of claims 1 to 3, further comprising an oxidizing agent.   The nickel-containing material polishing composition according to claim 4, wherein the concentration of the oxidizing agent is 0.001 mol / L or more and 2.0 mol / L or less.   Selected from the group consisting of hydrogen halides, organic compounds having two or more carboxyl groups in one molecule, and organic compounds having no hydrophobic group and two or more oxo acid groups containing a phosphorus atom in one molecule The nickel-containing material polishing composition according to claim 1, further comprising at least one selected from the group consisting of:   The composition for polishing a nickel-containing material according to any one of claims 1 to 6, wherein the pH is 7 or less.   A method for producing a nickel-containing material polishing composition, comprising a step of mixing abrasive grains and an organic compound having an oxo acid group and a hydrophobic group containing a phosphorus atom.   A polishing method in which a nickel-containing material is polished with the nickel-containing material polishing composition according to claim 1.   The manufacturing method of a nickel containing material including the process of grind | polishing the said nickel containing material with the grinding | polishing method of Claim 9.