CN102666014A - 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 - Google Patents
悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 Download PDFInfo
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- CN102666014A CN102666014A CN2011800050503A CN201180005050A CN102666014A CN 102666014 A CN102666014 A CN 102666014A CN 2011800050503 A CN2011800050503 A CN 2011800050503A CN 201180005050 A CN201180005050 A CN 201180005050A CN 102666014 A CN102666014 A CN 102666014A
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- lapping liquid
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- abrasive particle
- suspension
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (22)
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2011
- 2011-01-20 JP JP2012504347A patent/JP5582187B2/ja active Active
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- 2011-01-20 KR KR1020137031222A patent/KR20130136593A/ko not_active Application Discontinuation
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- 2011-01-20 CN CN201180005050.3A patent/CN102666014B/zh active Active
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CN105051145A (zh) * | 2013-03-19 | 2015-11-11 | 福吉米株式会社 | 研磨用组合物、研磨用组合物制造方法及研磨用组合物制备用试剂盒 |
CN105051145B (zh) * | 2013-03-19 | 2018-06-26 | 福吉米株式会社 | 研磨用组合物、研磨用组合物制造方法及研磨用组合物制备用试剂盒 |
US10351732B2 (en) | 2013-03-19 | 2019-07-16 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
CN111378416A (zh) * | 2013-09-10 | 2020-07-07 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法以及基体 |
CN106029572A (zh) * | 2013-12-16 | 2016-10-12 | 罗地亚经营管理公司 | 氧化铈颗粒的液体悬浮液 |
CN107949615A (zh) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | 研磨液、研磨液套剂和基体的研磨方法 |
CN107949615B (zh) * | 2015-09-09 | 2023-08-04 | 株式会社力森诺科 | 研磨液、研磨液套剂和基体的研磨方法 |
CN107033787A (zh) * | 2015-12-11 | 2017-08-11 | 凯斯科技股份有限公司 | 抛光粒子‑分散层复合体及包括此的抛光料浆组合物 |
US10138395B2 (en) | 2015-12-11 | 2018-11-27 | Kctech Co., Ltd. | Abrasive particle-dispersion layer composite and polishing slurry composition including the same |
CN107033787B (zh) * | 2015-12-11 | 2020-10-30 | 凯斯科技股份有限公司 | 抛光粒子-分散层复合体及包括此的抛光料浆组合物 |
CN115466574A (zh) * | 2022-09-21 | 2022-12-13 | 深圳市东方亮化学材料有限公司 | 一种双组份的金属研磨抛光膏的加工方法 |
Also Published As
Publication number | Publication date |
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US9982177B2 (en) | 2018-05-29 |
JPWO2011111421A1 (ja) | 2013-06-27 |
JP5582187B2 (ja) | 2014-09-03 |
JP2015007236A (ja) | 2015-01-15 |
CN107474799B (zh) | 2020-12-29 |
US20180251664A1 (en) | 2018-09-06 |
US10703947B2 (en) | 2020-07-07 |
CN102666014B (zh) | 2017-10-31 |
KR101443468B1 (ko) | 2014-09-22 |
US20120322346A1 (en) | 2012-12-20 |
TWI472602B (zh) | 2015-02-11 |
JP5862720B2 (ja) | 2016-02-16 |
WO2011111421A1 (ja) | 2011-09-15 |
CN107474799A (zh) | 2017-12-15 |
KR20130136593A (ko) | 2013-12-12 |
KR20120081196A (ko) | 2012-07-18 |
TW201132749A (en) | 2011-10-01 |
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