CN102017091B - 研磨剂及使用该研磨剂的基板研磨方法 - Google Patents
研磨剂及使用该研磨剂的基板研磨方法 Download PDFInfo
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- CN102017091B CN102017091B CN200980114267.0A CN200980114267A CN102017091B CN 102017091 B CN102017091 B CN 102017091B CN 200980114267 A CN200980114267 A CN 200980114267A CN 102017091 B CN102017091 B CN 102017091B
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (4)
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CN201410406599.9A CN104178088B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201510902635.5A CN105368397B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN201710567490.7A CN107199502A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN201210212508.9A CN102766407B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
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JP2008-112444 | 2008-04-23 | ||
JP2008112443 | 2008-04-23 | ||
JP2008112444 | 2008-04-23 | ||
JP2008-112443 | 2008-04-23 | ||
JP2008112445 | 2008-04-23 | ||
JP2008-112445 | 2008-04-23 | ||
JP2008-301285 | 2008-11-26 | ||
JP2008301298 | 2008-11-26 | ||
JP2008-301298 | 2008-11-26 | ||
JP2008301285 | 2008-11-26 | ||
JP2008-301277 | 2008-11-26 | ||
JP2008301277 | 2008-11-26 | ||
PCT/JP2009/057956 WO2009131133A1 (ja) | 2008-04-23 | 2009-04-22 | 研磨剤及びこの研磨剤を用いた基板の研磨方法 |
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CN2013103341183A Division CN103396765A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201510902635.5A Division CN105368397B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN201210212508.9A Division CN102766407B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201710567490.7A Division CN107199502A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN201410406599.9A Division CN104178088B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
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CN102017091B true CN102017091B (zh) | 2014-10-29 |
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CN201510902635.5A Active CN105368397B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN2013103341183A Pending CN103396765A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201710567490.7A Pending CN107199502A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN200980114267.0A Active CN102017091B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201210212508.9A Active CN102766407B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
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CN201510902635.5A Active CN105368397B (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
CN2013103341183A Pending CN103396765A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN201710567490.7A Pending CN107199502A (zh) | 2008-04-23 | 2009-04-22 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
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JP (4) | JP5423669B2 (zh) |
KR (3) | KR101260575B1 (zh) |
CN (6) | CN104178088B (zh) |
TW (4) | TW201000613A (zh) |
WO (1) | WO2009131133A1 (zh) |
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CN104178088B (zh) * | 2008-04-23 | 2016-08-17 | 日立化成株式会社 | 研磨剂及使用该研磨剂的基板研磨方法 |
CN102473622B (zh) * | 2009-10-22 | 2013-10-16 | 日立化成株式会社 | 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法 |
WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
US20130109607A1 (en) * | 2010-07-15 | 2013-05-02 | Nitto Boseki Co., Ltd. | Anti-corrosive agent for washing of metal with acid, detergent solution composition, and method for washing of metal |
KR20130129397A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
CN103221503A (zh) | 2010-11-22 | 2013-07-24 | 日立化成株式会社 | 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法 |
CN103222036B (zh) | 2010-11-22 | 2016-11-09 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
JP5925454B2 (ja) * | 2010-12-16 | 2016-05-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
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US9447306B2 (en) * | 2011-01-25 | 2016-09-20 | Hitachi Chemical Company, Ltd. | CMP polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
KR20140059230A (ko) * | 2011-09-07 | 2014-05-15 | 바스프 에스이 | 글리코시드를 포함하는 화학 기계 연마 (cmp) 조성물 |
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JP5916379B2 (ja) * | 2011-12-28 | 2016-05-11 | 花王株式会社 | 磁気ディスク基板の製造方法 |
JP2015088495A (ja) * | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
US10557058B2 (en) | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
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WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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