CN103144011B - 一种控制硅片抛光表面微粗糙度的方法及抛光装置 - Google Patents
一种控制硅片抛光表面微粗糙度的方法及抛光装置 Download PDFInfo
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- CN103144011B CN103144011B CN201110402331.4A CN201110402331A CN103144011B CN 103144011 B CN103144011 B CN 103144011B CN 201110402331 A CN201110402331 A CN 201110402331A CN 103144011 B CN103144011 B CN 103144011B
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CN103144011B true CN103144011B (zh) | 2016-05-18 |
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CN112378546B (zh) * | 2020-10-09 | 2023-03-24 | 上海新昇半导体科技有限公司 | 一种检测高温腔体温度的方法 |
CN114649245B (zh) * | 2022-05-19 | 2022-09-09 | 西安奕斯伟材料科技有限公司 | 一种用于承载和清洁硅片的装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1567540A (zh) * | 2003-06-27 | 2005-01-19 | 旺宏电子股份有限公司 | 使半导体沉积层平整的方法 |
CN1746255A (zh) * | 2001-02-20 | 2006-03-15 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
CN101104247A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
CN101125416A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | 氧化锌单晶衬底级基片的抛光方法 |
CN101733697A (zh) * | 2009-12-04 | 2010-06-16 | 北京有色金属研究总院 | 一种硅片抛光方法 |
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FR2842755B1 (fr) * | 2002-07-23 | 2005-02-18 | Soitec Silicon On Insulator | Rincage au moyen d'une solution de tensioactif apres planarisation mecano-chimique d'une tranche |
JP2004335978A (ja) * | 2003-05-12 | 2004-11-25 | Jsr Corp | 化学機械研磨方法 |
KR100648996B1 (ko) * | 2004-12-24 | 2006-11-28 | 동부일렉트로닉스 주식회사 | 화학적 기계 연마 장치 및 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1746255A (zh) * | 2001-02-20 | 2006-03-15 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
CN1567540A (zh) * | 2003-06-27 | 2005-01-19 | 旺宏电子股份有限公司 | 使半导体沉积层平整的方法 |
CN101104247A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
CN101125416A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | 氧化锌单晶衬底级基片的抛光方法 |
CN101733697A (zh) * | 2009-12-04 | 2010-06-16 | 北京有色金属研究总院 | 一种硅片抛光方法 |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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