CN103144011A - 一种控制硅片抛光表面微粗糙度的方法及抛光装置 - Google Patents
一种控制硅片抛光表面微粗糙度的方法及抛光装置 Download PDFInfo
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- CN103144011A CN103144011A CN2011104023314A CN201110402331A CN103144011A CN 103144011 A CN103144011 A CN 103144011A CN 2011104023314 A CN2011104023314 A CN 2011104023314A CN 201110402331 A CN201110402331 A CN 201110402331A CN 103144011 A CN103144011 A CN 103144011A
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- polishing
- silicon chip
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- microroughness
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- 238000005498 polishing Methods 0.000 title claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 238000007664 blowing Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
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CN201110402331.4A CN103144011B (zh) | 2011-12-06 | 2011-12-06 | 一种控制硅片抛光表面微粗糙度的方法及抛光装置 |
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CN201110402331.4A CN103144011B (zh) | 2011-12-06 | 2011-12-06 | 一种控制硅片抛光表面微粗糙度的方法及抛光装置 |
Publications (2)
Publication Number | Publication Date |
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CN103144011A true CN103144011A (zh) | 2013-06-12 |
CN103144011B CN103144011B (zh) | 2016-05-18 |
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CN201110402331.4A Active CN103144011B (zh) | 2011-12-06 | 2011-12-06 | 一种控制硅片抛光表面微粗糙度的方法及抛光装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112378546A (zh) * | 2020-10-09 | 2021-02-19 | 上海新昇半导体科技有限公司 | 一种检测高温腔体温度的方法 |
CN114649245A (zh) * | 2022-05-19 | 2022-06-21 | 西安奕斯伟材料科技有限公司 | 一种用于承载和清洁硅片的装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004009289A2 (en) * | 2002-07-23 | 2004-01-29 | S.O.I.Tec Silicon On Insulator Technologies | Rising after chemical-mechanical planarization process applied on a wafer |
JP2004335978A (ja) * | 2003-05-12 | 2004-11-25 | Jsr Corp | 化学機械研磨方法 |
CN1567540A (zh) * | 2003-06-27 | 2005-01-19 | 旺宏电子股份有限公司 | 使半导体沉积层平整的方法 |
CN1746255A (zh) * | 2001-02-20 | 2006-03-15 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
KR100648996B1 (ko) * | 2004-12-24 | 2006-11-28 | 동부일렉트로닉스 주식회사 | 화학적 기계 연마 장치 및 방법 |
CN101104247A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
CN101125416A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | 氧化锌单晶衬底级基片的抛光方法 |
CN101733697A (zh) * | 2009-12-04 | 2010-06-16 | 北京有色金属研究总院 | 一种硅片抛光方法 |
-
2011
- 2011-12-06 CN CN201110402331.4A patent/CN103144011B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1746255A (zh) * | 2001-02-20 | 2006-03-15 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
WO2004009289A2 (en) * | 2002-07-23 | 2004-01-29 | S.O.I.Tec Silicon On Insulator Technologies | Rising after chemical-mechanical planarization process applied on a wafer |
JP2004335978A (ja) * | 2003-05-12 | 2004-11-25 | Jsr Corp | 化学機械研磨方法 |
CN1567540A (zh) * | 2003-06-27 | 2005-01-19 | 旺宏电子股份有限公司 | 使半导体沉积层平整的方法 |
KR100648996B1 (ko) * | 2004-12-24 | 2006-11-28 | 동부일렉트로닉스 주식회사 | 화학적 기계 연마 장치 및 방법 |
CN101104247A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
CN101125416A (zh) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | 氧化锌单晶衬底级基片的抛光方法 |
CN101733697A (zh) * | 2009-12-04 | 2010-06-16 | 北京有色金属研究总院 | 一种硅片抛光方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112378546A (zh) * | 2020-10-09 | 2021-02-19 | 上海新昇半导体科技有限公司 | 一种检测高温腔体温度的方法 |
CN114649245A (zh) * | 2022-05-19 | 2022-06-21 | 西安奕斯伟材料科技有限公司 | 一种用于承载和清洁硅片的装置 |
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CN103144011B (zh) | 2016-05-18 |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
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Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Applicant after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: YOUYAN NEW MATERIAL CO., LTD. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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