TW201139633A - Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using same, and kit for preparing aqueous dispersion for chemical mechanical polishing - Google Patents

Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using same, and kit for preparing aqueous dispersion for chemical mechanical polishing Download PDF

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TW201139633A
TW201139633A TW100102875A TW100102875A TW201139633A TW 201139633 A TW201139633 A TW 201139633A TW 100102875 A TW100102875 A TW 100102875A TW 100102875 A TW100102875 A TW 100102875A TW 201139633 A TW201139633 A TW 201139633A
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honing
chemical mechanical
water
dispersion
film
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TW100102875A
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Chinese (zh)
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Tatsuyoshi Kawamoto
Taichi Abe
Kazuo Nishimoto
Hiroshi Shiho
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Jsr Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Abstract

Disclosed is an aqueous dispersion for chemical mechanical polishing, which is characterized by containing abrasive grains, ferrate ions (FeO4 2-) and a dispersion medium.

Description

201139633 六、發明說明： 【發明所屬之技術領域】 本發明係關於化學機械硏磨用水系分散體及使用此之 化學機械硏磨方法，以及化學機械硏磨用水系分散體調製 用套組。 【先前技術】 近年來，隨著半導體裝置之高精密化，半導體裝置內 形成之配線之細微化正在進展。隨著該進展，而使用利用 化學機械硏磨（以下亦稱爲「CMP」）使配線層平坦化之 手法。例如日本特表2002-518845號公報中提案利用濺鍍 、電鍍等方法將鋁、銅、鎢等導電體金屬堆積在設置於半 導體基板上之氧化矽等絕緣膜上之細微溝槽或孔中之後， 藉由CMP去除剩餘層合之金屬膜，僅將金屬殘留在細微 溝槽或孔中之鑲嵌製程。 以Cu鑲嵌法製造半導體裝置時，一般係進行組合下 述之二階段硏磨：藉由硏磨去除障壁金屬膜上之銅膜之步 驟（第一硏磨步驟），隨後藉由硏磨去除障壁金屬膜而因 應需要使銅膜及層間絕緣膜進一步平坦化之步驟（第二硏 磨步驟）。 第一硏磨步驟要求以高速硏磨銅膜之特性，但第一硏 磨步驟結束時（使障壁金屬膜等其他種材料膜露出之時點 )’邊對銅膜維持高硏磨速度邊抑制銅膜之凹陷（dishing )等有其困難。而且第二硏磨步驟中，使不僅是銅膜亦使 -5- 201139633 障壁金屬膜等其他種材料膜露出之半導體基板面（被硏磨 面）維持高速硏磨特性，而仍抑制銅膜之凹陷等有其困難 0 爲了高速硏磨被硏磨面，只要提高硏磨時之施加壓力 加大於被硏磨面之摩擦力即可。然而，該情況下隨著硏磨 速度提高而有被硏磨面凹陷等之平滑性亦惡化之問題。相 反地，爲提高被硏磨面之凹陷等之平滑性，雖降低硏磨時 之施加壓力即可，但有被硏磨面之硏磨速度顯著降低之問 題。爲此，就用以改善硏磨特性之硏磨方法而言之發展已 達到極限。 爲解決該等問題而提案有各種組成之化學機械硏磨用 水系分散體。例如，國際公開第2007/1 1 6770號說明書揭 示藉由於硏磨用組成物中含有水溶性高分子，維持硏磨速 度之同時，亦抑制銅膜凹陷之技術。然而，對於要求更細 微化之目前而言並不足。 又，改善硏磨速度與凹陷之方法之一有於硏磨用組成 物中添加含有金屬之強力氧化劑之方法。例如特開平11-U 6948號公報中揭示於硏磨用組成物中添加硝酸鐵等之 技術。然而，硏磨步驟結束後抑制被硏磨表面受金屬離子 之污染爲難以解決之課題。 另一方面，以上下縱向使配線間電性接合之通孔係使 用埋入性優異之鎢。對鎢膜硏磨用之化學機械硏磨用水系 分散體需要強力之氧化作用，例如特表2005-518091號公 報中提案含有過氧化氫等之氧化劑、硝酸鐵等之鐵觸媒、 -6- 201139633 及二氧化矽等之硏磨粒之硏磨用組成物相關之技術。再者 爲了硏磨鎢膜而使用之化學機械硏磨用水系分散體要求具 有更大之硏磨速度，且要求極力減少被硏磨面上殘留之金 屬污染，爲了均衡良好地達到該等特性，在例如特開 2007_ 1 9093號公報或特表2008-503 875號公報中檢討將水 溶性聚合物添加於硏磨用組成物中之技術。 然而，如前述之以往的鎢膜硏磨用之化學機械硏磨用 水系分散體對於兼備有對鎢膜之高硏磨速度與降低硏磨結 束時殘留於被硏磨面上之金屬污染方面有其限制。亦即， 以如前述之過去技術，爲了實現對鎢膜之高硏磨速度，而 採用利用含有大量硝酸鐵等鐵觸媒之化學機械硏磨用水系 分散體使鎢膜表面氧化之方法。不過，使用該化學機械硏 磨用水系分散體時，由於硏磨步驟結束時會在被硏磨面上 殘留大量鐵離子，故會有極難以自被硏磨面上完全去除鐵 離子之問題。 【發明內容】 [發明欲解決之課題] 本發明之幾種樣態係提供可解決前述課題、兼具有對 金屬膜之高硏磨速度與被硏磨面之高平坦性，且硏磨步驟 結束時可降低被硏磨面上之金屬污染之化學機械硏磨用水 系分散體及使用此之化學機械硏磨方法，以及化學機械硏 磨用水性分散體調製用套組。 201139633 [用以解決課題之手段] 本發明係爲解決前述課題之至少一部份而完成者，可 利用以下樣態或適用例予以實現。 [適用例1] 本發明之化學機械硏磨用水系分散體之一樣態，其特 徵爲含有 硏磨粒， 鐵酸離子（Fe042_)， 分散介質。 [適用例2] 適用例1之化學機械硏磨用水系分散體，其中 前述鐵酸離子（Fe042·)之濃度爲l(T6mol/L以上10' 2mol/L 以下。 [適用例3] 適用例1之化學機械硏磨用水系分散體，其中 前述硏磨粒爲膠體二氧化矽（colloidal silica)。 [適用例4] 適用例1之化學機械硏磨用水系分散體，其中 進而含有由過氧化氫、過硫酸鉀及過硫酸銨所選出之 至少一種。 -8- 201139633 [適用例5] 適用例1至適用例4之任一例之化學機械硏磨用水系 分散體，其可用於含有銅膜或鎢膜之半導體基板之硏磨。 [適用例6] 適用例1之化學機械硏磨用水系分散體’其可混合硏 磨粒、鐵酸鹽及分散介質而製作。 [適用例7] 本發明之化學機械硏磨用水系分散體調製用之套組’ 其係用以調製適用例1之化學機械硏磨用水系分散體之套 組，其特徵爲含有 含有鐵酸離子及水之第一組成物， 含有硏磨粒及分散介質之第二組成物。 [適用例8] 適用例7之化學機械硏磨用水系分散體調製用套組， 其進而含有具有由過氧化氫、過硫酸鉀及過硫酸銨所選出 之至少一種，以及水之第三組成物。 [適用例9] 本發明之化學機械硏磨方法，其特徵爲使用適用例1 之化學機械硏磨用水系分散體硏磨含有銅膜或鎢膜之半導 體基板。 -9- 201139633 [發明之效果] 依據本發明之化學機械硏磨用水系分散體，藉由含有 顯示比一般使用之過氧化氫等更高氧化力之鐵酸離子（ Fe〇42·)，而可兼具對金屬膜之高硏磨速度與被硏磨面之 高平坦性。且，可大幅降低過去在以含有鐵離子之化學機 械硏磨用水系分散體中成爲問題之被硏磨面之金屬污染。 依據本發明之化學機械硏磨用水系分散體調製用套組 ，將化學上不安定之鐵酸離子（Fe042·)與其他成分分開 儲存’可抑制鐵酸離子（Fe042·)之分解。只要在正要使 用前混合第一組成物與第二組成物及第三組成物而調製化 學機械硏磨用水系分散體，即可將化學機械硏磨用水系分 散體之性能發揮至最大限度^ 依據本發明之化學機械硏磨方法，可比過去更大幅提 高對形成於半導體基板上之金屬膜之硏磨速度。且，可大 幅降低被硏磨面之金屬污染。 【實施方式】 以下，詳細說明本發明之較佳實施形態。又，本發明 並不受下述實施形態之限制，亦包含在不改變本發明精神 之範圍內所進行之各種變形例。 1.化學機械硏磨用水系分散體 本發明之一實施形態之化學機械硏磨用水系分散體之 特徵爲含有硏磨粒、鐵酸離子（Fe042·)及分散介質。以 -10- 201139633 下’針對本貫施形態之化學機械硏磨用水系分散體中所含 之各成分加以詳細說明。 1.1.硏磨粒 本實施形態之化學機械硏磨用水系分散體含有硏磨粒 。至於硏磨粒只要是具有機械性硏磨金屬膜之作用者即無 特別限制’列舉爲例如膠體二氧化矽、發煙二氧化矽、氧 化铈、氧化鋁、氧化锆、氧化鈦等。該等中，就降低刮痕 (硏磨傷痕）之觀點而言，以膠體二氧化矽較佳。膠體二 氧化矽可使用例如特開2003-1 0992 1號公報等所述之習知 方法製造者。 硏磨粒之平均粒徑較好爲5nm以上1 OOOnm以下，更 好爲l〇nm以上700nm以下，最好爲I5nm以上500nm以 下。只要使硏磨粒之平均粒徑在上述範圍內，則對金屬膜 之硏磨中可獲得充分之硏磨速度，同時可降低凹陷之發生 。且’就化學機械硏磨用水系分散體之儲存安定性之觀點 而言’可獲得不易發生硏磨粒之沉降·分離之安定化學機 械硏磨用水系分散體。硏磨粒之平均粒徑可使用以動態光 散射法爲測定原理計算出之平均粒徑。測定裝置列舉爲例 如粒徑分布測定裝置（堀場製作所股份有限公司製造，型 號「LB5 5 0」）等。 再者，測定膠體二氧化矽之平均粒徑時，可使用由利 用BET法測定之比表面積計算出之平均粒徑代替藉由以 前述之動態光散射法作爲測定原理之粒徑分佈裝置所測定 -11 - 201139633 之平均粒徑。至於測定裝置列舉爲流動式比表面積自動測 定裝置（島津製作所股份有限公司製造’ 「Micrometries FlowSorb II 2 3 00」）等。 以下，針對由膠體二氧化矽之比表面積計算平均粒徑 之方法加以說明。假設膠體二氧化矽之形狀爲真球狀，粒 子之直徑爲d(nm)，比重爲p(g/cm3)時，η個粒子之 表面積Α成爲Α = ηπ(12。η個粒子之質量Ν成爲Ν = ρηπ(Ι3/6 。比表面積S以粉體之每單位質量之全部構成粒子之表面 積表示。因此，η個粒子之比表面積S爲S = A/N = 6/pd。 將二氧化矽粒子之比重P = 2.2代入該式中，換算單位時， 可導出下述式（1 )， 平均粒徑（nm) =2727/S (m2/g) ... ( 1 ) 因此，藉由將使用BET法測定之比表面積之値代入 上述式（1)中，可求得膠體二氧化矽之平均粒徑。 硏磨粒之含量相對於化學機械硏磨用水系分散體之全 部質量，較好爲〇.〇1質量％以上20質量％以下，更好爲 0.1質量％以上10質量％以下，最好爲0.1質量％以上6質 量°/。以下。 1.2.鐵酸離子（Fe042·) 本實施形態之化學機械硏磨用水系分散體含有鐵酸離 子（Fe042')。一般化學機械硏磨用水系分散體係使用過 -12- 201139633 氧化氫或過硫酸銨等過硫酸鹽（過氧代二硫酸鹽）作爲氧 化劑。已知過硫酸鹽藉由使化學機械硏磨用水系分散體之 pH成爲酸性，而顯示與過氧代二硫酸相同之氧化作用。 該等對於標準電極之氧化還原電位分別爲過氧化氫：1 .8 V ，過硫酸鹽（過氧代二硫酸鹽）：2.0 V。相對於此，鐵之 氧化數爲VI價之鐵酸離子對於標準氫電極之氧化還原電 位顯示高如2.2V之値。鐵酸離子藉由具有如此高之氧化 還原電位，可使金屬膜之表面強力氧化，可大幅提高對金 屬膜之硏磨速度。 鐵酸離子係藉由將由鐵酸鉀、鐵酸鋇、鐵酸鈉及鐵酸 銨等鐵酸鹽所選出之至少一種溶解於水等分散介質中而生 成。該等中，就對半導體裝置之殘留污染性及對水之溶解 性之觀點而言，較好使用鐵酸鉀。 藉由使用鐵酸離子，可大幅降低於過去含有鐵離子之 漿料中爲問題之硏磨後被硏磨面之鐵離子之殘留污染。 如前述，鐵酸離子由於具有高的氧化還原電位，故少 量添加即可使金屬膜表面有效地氧化。更詳細而言，化學 機械硏磨用水系分散體中之鐵酸離子之濃度較好爲 l(T6mol/L 以上 10_2mol/L 以下，更好爲 l(T5mol/L 以上 10_4mol/L以下。鐵酸離子之濃度在前述範圍內時，對金 屬膜可達到充分硏磨速度，同時可減低來自鐵酸離子之殘 留物發生。 鐵酸離子由於具有強的反應性故化學上不安定，在中 性至酸性條件下可使銅或鎢等金屬強力氧化，相反地’成 -13- 201139633 爲化學機械硏磨用水系分散體爲不安定。因此，調製化學 機械硏磨用水系分散體時，需在恰硏磨前添加並混合必要 量之鐵酸鹽，但卻可展現安定的硏磨特性而較佳。再者， 鐵酸離子具有因光而分解之性質，故儲存化學機械硏磨用 水系分散體時較好遮光。 1.3.分散介質 本實施形態之化學機械硏磨用水系分散體含有分散介 質。分散介質列舉爲水、水及醇類之混合介質、含有水及 與水具有相溶性之有機溶劑之混合介質等。該等中，以使 用水、水及醇類之混合介質較佳，更好使用水。 1.4 .其他添加劑 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加氧化劑、水溶性聚合物、界面活性劑、胺基酸、錯 合物形成劑、pH調整劑等添加劑。以下針對各添加劑加 以說明。 1.4.1.氧化劑 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加氧化劑。氧化劑具有使金屬膜之表面氧化並促進與 硏磨液成分之錯化反應，藉此在金屬膜表面上創造脆弱之 改質層而容易硏磨之效果。再者，前述鐵酸離子亦具有作 爲氧化劑之功能，但本發明中所謂「氧化劑」意指鐵酸離 -14- 201139633 子以外之成分。 至於氧化劑列舉爲例如過硫酸銨、過硫酸鉀、過氧化 氫、硝酸鐵、硝酸二銨鉋、硫酸鐵、次亞氯酸、臭氧、過 碘酸鉀及過乙酸等。該等氧化劑可單獨使用一種，亦可組 合兩種以上使用。又，該等氧化劑中，考慮氧化力、與保 護膜之相合性及操作容易等時，較好爲由過硫酸銨、過硫 酸鉀及過氧化氫所選出之至少一種。 尤其於鎢膜用之化學機械硏磨用水系分散體時，較好 含有由過氧化氫及過硫酸銨所選出之至少一種（以下亦稱 爲「特定氧化劑」）。於化學機械硏磨用水系分散體中添 加過硫酸錢時，認爲係藉由使該水系分散體中之水之一部 分利用過硫酸銨而氧化，而發生過氧化氫者。結果，其效 果相較於直接添加該量之過氧化氫時較弱，但可期待與添 加過氧化氫時相同之效果。 鎢膜用之化學機械硏磨用水系分散體時，認爲係藉由 倂用鐵酸離子與特定氧化劑，而促進如下述式（2)所示 之反應。 W + K2Fe〇4 + H2〇2^FeW〇4 + 2KOH ... (2) 認爲藉由該等反應，使鎢膜之表面氧化，於鎢膜表面 上產生脆弱之改質層，藉此有容易硏磨鎢膜之效果者。如 上述，藉由倂用鐵酸離子與特定氧化劑造成之相乘效果， 相較於單獨使用該等之情況，可大幅提高對鎢膜之硏磨速 -15- 201139633 度。 氧化劑之含量相對於化學機械硏磨用水系分散體之全 部質量，較好爲0.01質量％以上10質量％以下，更好爲 0.1質量％以上3質量％以下，最好爲0.5質量％以上i 5 質量％以下。氧化劑之含量在前述範圍時，可進一步促進 以前述式（2)表示之反應故而較佳。 1.4.2 .水溶性聚合物 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加水溶性聚合物。水溶性聚合物可藉由在吸附在被硏 磨面表面形成被膜而抑制凹陷等之發生，具有更提高被硏 磨面平坦性之效果。尤其是被硏磨面上含有鎢膜時，具有 可容易吸附於具有凹凸之鎢膜表面形成保護膜，達到控制 鎢膜硏磨之作用效果。亦即，藉由使用適量之水溶性聚合 物，可邊保護鎢膜之凹部邊進行凸部之硏磨，而可消除初 期階差。 水溶性聚合物並無特別限制，列舉爲陰離子性聚合物 、陽離子性聚合物、非離子性聚合物等。陰離子性聚合物 列舉爲例如聚丙烯酸、聚甲基丙烯酸、聚苯乙烯磺酸、及 該等之鹽等。陽離子性聚合物列舉爲例如聚伸烷基亞胺、 聚乙烯基吡咯烷酮、聚乙烯基胺、聚乙烯基吡啶、聚烯丙 基胺' 聚乙烯基哌啶、聚離胺酸、聚乙烯基咪唑等。該等 陽離子聚合物中，較好爲聚伸烷基亞胺、更好爲聚伸乙基 亞胺。非離子性聚合物列舉爲例如聚環氧乙烷、聚環氧丙 -16- 201139633 烷、聚乙烯醇、聚丙烯醯胺等。該等水溶性聚合物可單獨 使用一種，亦可組合兩種以上使用。 水溶性聚合物之數平均分子量較好爲200以上1 00萬 以下，更好爲1萬以上10萬以下。本發明中所謂「數平 均分子量」爲聚三葡萄糖（pullulan)換算之値，可藉凝 膠滲透層析儀（管柱型號「Shodex Asahipak GF-710HQ + GF-510HQ+ GF-3 1 OHQ」昭和電工股份有限公司製造，溶 離液「0.2M單乙醇胺水溶液」）測定。 水溶性聚合物之含量相對於化學機械硏磨用水系分散 體之全部質量，較好爲0.01質量％以上5質量％以下，更 好爲〇. 1質量％以上1質量％以下。水溶性聚合物之數平 均分子量及含量在上述範圍內時，被硏磨面上含鎢膜時， 可藉由於鎢膜上形成之保護膜適度降低硏磨摩擦，故可更 提高鎢膜之平坦性。 1.4.3.界面活性劑 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加界面活性劑。界面活性劑具有賦予化學機械硏磨用 水系分散體適度黏性之效果。化學機械硏磨用水系分散體 之黏度較好調製爲在25°C爲〇.5mPa*s以上未達lOmPa.s 。藉由對化學機械硏磨用水系分散體賦予適度黏性，可將 朝硏磨墊壓附壓力有效且均勻地傳達到被硏磨面，尤其可 改善被硏磨面之平坦性。 界面活性劑並無特別限制，可列舉爲陰離子性界面活 -17- 201139633 性劑、陽離子性界面活性劑、非離子性界面活性劑等。陰 離子性界面活性劑列舉爲例如脂肪酸皂、烷基醚羧酸鹽等 羧酸鹽；烷基苯磺酸鹽、烷基萘磺酸鹽、α-烯烴磺酸鹽等 磺酸鹽；高級醇硫酸酯鹽、烷基醚硫酸鹽、聚氧伸乙基烷 基苯基醚硫酸鹽等之硫酸酯鹽；烷基磷酸酯等磷酸酯鹽； 全氟烷基化合物等含氟系界面活性劑等。陽離子性界面活 性劑列舉爲例如脂肪族胺鹽、脂肪族銨鹽等。非離子性界 面活性劑列舉爲例如乙炔二醇、乙炔二醇環氧乙烷加成物 、乙炔醇等具有三鍵之非離子性界面活性劑；聚乙二醇型 界面活性劑等。又，亦可使用聚乙烯醇、環糊精、聚乙烯 基甲基醚、羥基乙基纖維素等。前述例示之界面活性劑中 ，就第一硏磨步驟中邊維持對鎢膜之平坦性邊硏磨之觀點 而言，以烷基苯磺酸鹽較佳，更好爲十二烷基苯磺酸鉀、 十二烷基苯磺酸銨。該等界面活性劑可單獨使用一種，亦 可組合兩種以上使用。 界面活性劑之含量相對於化學機械硏磨用水系分散體 之總質量，較好爲0.001質量％以上5質量％以下，更好 爲0.01質量％以上0.5質量％以下，最好爲0.05質量％以 上0.2質量％以下。界面活性劑之含量在前述範圍內時， 可邊抑制被硏磨面之凹陷發生且邊硏磨，故可進一步提高 被硏磨面之平坦性。 1.4.4.胺基酸 本贲施形態之化學機械硏磨用水系分散體可視需要進 -18- 201139633 而添加胺基酸。胺基酸具有容易與銅離子形成配位鍵之性 質。據此，被硏磨面上含銅膜時，胺基酸在銅膜之表面形 成配位鍵。藉由該作用’可邊抑制銅膜之表面粗糙邊確保 被硏磨面之高平坦性。如上述，胺基酸由於與銅膜及銅離 子之親和性優異，故可提高對銅膜之硏磨速度，同時與因 銅膜之硏磨而溶出於化學機械硏磨用水系分散體中之銅離 子形成配位鍵藉此抑制銅析出。藉由抑制化學機械硏磨用 水系分散體中之銅析出，可抑制銅膜上之刮痕等硏磨缺陷 之發生。 胺基酸列舉爲例如丙胺酸、精胺酸、天冬醯胺、天冬 醯胺酸、半胱胺酸、麩醯胺、麩醯胺酸、甘胺酸、組胺酸 、異白胺酸、白胺酸、離胺酸、蛋胺酸、苯基丙胺酸、脯 胺酸、絲胺酸、蘇胺酸、色胺酸、酪胺酸、纈胺酸等。該 等胺基酸可單獨使用一種，亦可組合兩種以上使用。 本實施形態之化學機械硏磨用水系分散體較好含有前 述例示之胺基酸中之由甘胺酸、丙胺酸及麩胺酸所選出之 至少一種。此係因爲甘胺酸、丙胺酸及麩胺酸由於與銅離 子形成配位鍵之作用在前述例示之胺基酸中屬於較強’故 提高對銅膜之硏磨速度之效果更高。該等中’最好含有該 等效果高之甘胺酸。 胺基酸之含量相對於化學機械硏磨用水系分散體之總 質量，較好爲0.5質量％以上10質量％以下’更好爲1質 量％以上6質量％以下，最好爲2質量％以上4質量％以下 -19- 201139633 1·4·5.錯合物形成劑 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加錯合物形成劑。錯合物形成劑爲具有與鎢形成水不 溶性錯合物，而保護被硏磨面表面之作用效果。藉由該作 用效果，可邊保護鎢膜之凹部邊進行凸部之硏磨，消除初 期階差。此處，所謂「水不溶性」意指實質上不溶解於水 ，且若與氧化劑共存狀態下之濕式蝕刻速度未達3nm/分 鐘則亦包含水難溶性。 錯合物形成劑較好爲構造中至少具有雜環之化合物， 更好爲構造中具有一個以上之由具有氮原子雜五員環及雜 六員環所選出之至少一種雜環之化合物》前述雜環列舉爲 例如吡咯構造、咪唑構造、三唑構造等雜五員環；吡啶構 造、嘧啶構造、嗒嗪構造、哌啶構造等雜六員環等。 該雜環亦可形成縮合環。該種雜環列舉爲例如吲哚構 造、異吲哚構造 '苯并咪唑構造、苯并三唑構造、喹啉構 造 '異嗤啉構造、喹唑啉構造、噌啉構造、酞嗪構造、喹 唑啉構造、吖啶構造等。 該等具有雜環之化合物中，以具有吡啶構造、喹啉構 造、苯并咪唑構造、苯并三唑構造之化合物較佳。更具體 而言，較好爲喹啉酸、喹納啶酸、苯并咪唑、苯并三唑， 更好爲喹啉酸、喹納啶酸。該等錯合物形成劑可單獨使用 一種，亦可組合兩種以上使用。 錯合物形成劑之含量相對於化學機械硏磨用水系分散 體之總質量，較好爲0.01質量％以上10質量％以下，更 -20- 201139633 好爲0.02質量％以上5質量％以下，最好爲0.1質量％以 上2質量％以下。錯合物形成劑之含量在前述範圍內時， 可邊消除鎢膜之初期階差邊硏磨，故可進一步提高被硏磨 面之平坦性。 1 .4.6. pH調整劑 本實施形態之化學機械硏磨用水系分散體可視需要進 而添加pH調整劑。pH調整劑列舉爲例如氫氧化鉀、乙二 胺、TMAH (氫氧化四甲基銨）等鹼性鹽；酞酸、馬來酸 、檸檬酸等有機酸及其鹽；硝酸、鹽酸、硫酸等無機酸及 其鹽等。 尤其是前述例示之具有兩個以上羧基之pH調整劑不 僅對配線金屬，對於生成障壁金屬膜中使用之安定多價離 子之金屬種亦具有高的配位能力，故可使因配線金屬或障 壁金屬膜之硏磨發生之多價離子安定化，可減低金屬鹽之 析出。據此，可抑制被硏磨面之表面粗糙且獲得高度之平 坦性，同時可降低刮痕等表面缺陷之發生。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical honing water-based dispersion, a chemical mechanical honing method using the same, and a chemical mechanical honing water-based dispersion-modulating kit. [Prior Art] In recent years, with the high precision of semiconductor devices, the miniaturization of wiring formed in semiconductor devices is progressing. With this progress, a technique of flattening the wiring layer by chemical mechanical honing (hereinafter also referred to as "CMP") is used. For example, Japanese Patent Publication No. 2002-518845 proposes to deposit a conductor metal such as aluminum, copper or tungsten on a fine groove or hole provided in an insulating film such as ruthenium oxide provided on a semiconductor substrate by sputtering or plating. , the etch process is performed by removing the remaining laminated metal film by CMP and leaving only the metal in the fine trench or hole. When the semiconductor device is fabricated by the Cu damascene method, the following two-stage honing is generally performed: a step of removing the copper film on the barrier metal film by honing (first honing step), and then removing the barrier by honing The metal film is required to further planarize the copper film and the interlayer insulating film (second honing step). The first honing step requires the characteristics of the copper film to be honed at a high speed, but at the end of the first honing step (the point at which the film of the other material such as the barrier metal film is exposed) is maintained while maintaining a high honing speed on the copper film. Dishing of the film, etc., has its difficulty. In addition, in the second honing step, the copper film is used to maintain the high-speed honing property of the semiconductor substrate surface (the honed surface) exposed by other kinds of material films such as the barrier film of the metal film, such as the barrier film, and the copper film is still suppressed. There are difficulties in the depression, etc. 0 In order to honing the surface to be honed at a high speed, it is only necessary to increase the applied pressure at the time of honing to increase the frictional force greater than the surface to be honed. However, in this case, there is a problem that the smoothness of the surface to be honed or the like is deteriorated as the honing speed is increased. On the contrary, in order to improve the smoothness of the embossed surface, etc., the pressure applied during the honing is lowered, but the honing speed of the honed surface is remarkably lowered. For this reason, the development of the honing method for improving the honing characteristics has reached the limit. In order to solve these problems, it is proposed to have a chemical dispersion for chemical mechanical honing of various compositions. For example, the specification of International Publication No. 2007/1 1 6770 discloses a technique for suppressing depression of a copper film while maintaining a honing speed by containing a water-soluble polymer in the composition for honing. However, it is not enough for the current requirements to be more granular. Further, one of the methods for improving the honing speed and the dent is a method of adding a strong oxidizing agent containing a metal to the honing composition. A technique of adding iron nitrate or the like to a composition for honing is disclosed in Japanese Laid-Open Patent Publication No. Hei 11-U 6948. However, it is difficult to solve the problem that the honed surface is contaminated by metal ions after the honing step is completed. On the other hand, the through hole in which the wiring is electrically joined in the upper and lower longitudinal directions is made of tungsten excellent in embedding property. The chemical mechanical honing water-based dispersion for tungsten film honing requires a strong oxidizing action. For example, it is proposed in the Japanese Patent Publication No. 2005-518091 to contain an oxidizing agent such as hydrogen peroxide or an iron catalyst such as iron nitrate, -6- 201139633 and related technologies for honing compositions for honing abrasives such as cerium oxide. Furthermore, the chemical mechanical honing water-based dispersion used for honing the tungsten film is required to have a larger honing speed, and it is required to minimize the metal contamination remaining on the honing surface, in order to achieve such characteristics in a balanced manner. A technique of adding a water-soluble polymer to a composition for honing is reviewed in, for example, JP-A-2007-19093 or JP-A-2008-503875. However, the conventional chemical mechanical honing water-based dispersion for tungsten film honing as described above has both a high honing speed for the tungsten film and a metal contamination remaining on the honed surface at the end of the honing. Its limits. That is, in order to achieve a high honing speed for a tungsten film as in the prior art described above, a method of oxidizing the surface of the tungsten film by using a chemical mechanical honing aqueous dispersion containing a large amount of an iron catalyst such as iron nitrate is employed. However, when the chemical mechanical honing aqueous dispersion is used, since a large amount of iron ions remain on the honed surface at the end of the honing step, there is a problem that it is extremely difficult to completely remove the iron ions from the honed surface. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] Several aspects of the present invention provide a solution to the above problems, a high honing speed to a metal film, and a high flatness of a honed surface, and a honing step At the end, the chemical mechanical honing water-based dispersion which reduces the metal contamination on the honed surface, and the chemical mechanical honing method using the same, and the chemical mechanical honing aqueous dispersion preparation kit. 201139633 [Means for Solving the Problems] The present invention has been made to solve at least a part of the above problems, and can be realized by the following aspects or application examples. [Application Example 1] The chemical mechanical honing of the present invention is in the same state as the aqueous dispersion, and is characterized by containing cerium particles, ferric acid ions (Fe042_), and a dispersion medium. [Application Example 2] The chemical mechanical honing water-based dispersion according to the first aspect, wherein the concentration of the ferric acid ion (Fe042·) is 1 (T6 mol/L or more and 10' 2 mol/L or less. [Application 3] Application example A chemical mechanical honing aqueous dispersion, wherein the honing granule is colloidal silica. [Application Example 4] The chemical mechanical honing aqueous dispersion of Application Example 1, which further contains peroxidation At least one selected from the group consisting of hydrogen, potassium persulfate, and ammonium persulfate. -8- 201139633 [Applicable Example 5] A chemical mechanical honing aqueous dispersion according to any one of Application Examples 1 to 4, which can be used for containing a copper film Or honing of a semiconductor substrate of a tungsten film. [Application Example 6] The chemical mechanical honing water-based dispersion of the application example 1 can be produced by mixing honing particles, ferrite and a dispersion medium. [Application Example 7] The invention relates to a kit for preparing a water-based dispersion for chemical mechanical honing, which is used for preparing a set of a chemical mechanical honing water-based dispersion of the first embodiment, which is characterized in that it contains a ferrite ion and water first. Composition, containing granules and dispersion medium [Application Example 8] The chemical mechanical honing water-based dispersion preparation kit of the seventh aspect, further comprising at least one selected from hydrogen peroxide, potassium persulfate, and ammonium persulfate, and water [Application Example 9] The chemical mechanical honing method of the present invention is characterized in that the semiconductor substrate containing a copper film or a tungsten film is honed by the chemical mechanical honing water-based dispersion of Application Example 1. -9- 201139633 [Effects of the Invention] The chemical mechanical honing water-based dispersion according to the present invention can be combined with a ferrite ion (Fe〇42·) which exhibits a higher oxidizing power than hydrogen peroxide which is generally used. The high honing speed of the metal film and the high flatness of the surface to be honed, and the metal contamination of the honed surface which has been a problem in the chemical mechanical honing water-based dispersion containing iron ions in the past can be greatly reduced. According to the chemical mechanical honing water-based dispersion preparation kit of the present invention, the chemically unstable ferrite ion (Fe042·) is stored separately from other components to inhibit the decomposition of ferric acid ions (Fe042·). positive By mixing the first composition with the second composition and the third composition to prepare a chemical mechanical honing aqueous dispersion, the performance of the chemical mechanical honing aqueous dispersion can be maximized according to the present invention. The chemical mechanical honing method can greatly increase the honing speed of the metal film formed on the semiconductor substrate, and can greatly reduce the metal contamination of the honed surface. [Embodiment] Hereinafter, the comparison of the present invention will be described in detail. The present invention is not limited to the following embodiments, and includes various modifications made without departing from the spirit of the invention. 1. Chemical mechanical honing water dispersion The chemical mechanical honing water-based dispersion of the embodiment is characterized by containing honing particles, ferric acid ions (Fe042·), and a dispersion medium. The components contained in the chemical mechanical honing water dispersion according to the present embodiment will be described in detail in -10-201139633. 1.1. Honing granules The chemical mechanical honing water-based dispersion of the present embodiment contains honing particles. The honing grain is not particularly limited as long as it has a mechanical honing action of the metal film, and is exemplified by, for example, colloidal cerium oxide, fumed cerium oxide, cerium oxide, aluminum oxide, zirconium oxide, titanium oxide, or the like. Among these, colloidal cerium oxide is preferred from the viewpoint of reducing scratches (honing scars). The colloidal cerium oxide can be produced by a conventional method such as that described in JP-A-2003-1 0992 1 or the like. The average particle diameter of the honing particles is preferably 5 nm or more and 1 0.000 nm or less, more preferably 1 nm or more and 700 nm or less, and more preferably 1 nm or more and 500 nm or less. When the average particle diameter of the honing particles is within the above range, a sufficient honing speed can be obtained in the honing of the metal film, and the occurrence of dents can be reduced. Further, from the viewpoint of the storage stability of the chemical mechanical honing water-based dispersion, it is possible to obtain a stable chemical mechanical honing water-based dispersion which is less likely to cause sedimentation and separation of the honing particles. The average particle diameter of the honing particles can be calculated by the dynamic light scattering method as the average particle diameter. The measuring device is exemplified by, for example, a particle size distribution measuring device (manufactured by Horiba, Ltd., model "LB5 50"). Further, when the average particle diameter of the colloidal cerium oxide is measured, the average particle diameter calculated from the specific surface area measured by the BET method can be used instead of the particle size distribution device which is measured by the dynamic light scattering method described above. Average particle size of -11 - 201139633. The measuring device is exemplified by a flow type specific surface area automatic measuring device (manufactured by Shimadzu Corporation, "Micrometries FlowSorb II 2 3 00"). Hereinafter, a method of calculating the average particle diameter from the specific surface area of the colloidal cerium oxide will be described. Assuming that the shape of the colloidal ceria is a true spherical shape, the diameter of the particles is d (nm), and the specific gravity is p (g/cm3), the surface area η of the n particles becomes Α = ηπ (the mass of η particles) It becomes Ν = ρηπ (Ι3/6. The specific surface area S is expressed by the surface area of all the constituent particles per unit mass of the powder. Therefore, the specific surface area S of the η particles is S = A/N = 6/pd. The specific gravity of the ruthenium particles P = 2.2 is substituted into the formula. When the unit is converted, the following formula (1) can be derived, and the average particle diameter (nm) = 2727 / S (m2 / g) ... (1) By substituting the enthalpy of the specific surface area measured by the BET method into the above formula (1), the average particle diameter of the colloidal cerium oxide can be determined. The content of the honing granules is relative to the total mass of the chemical mechanical honing water-based dispersion. Preferably, it is 1% by mass or more and 20% by mass or less, more preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 6% by mass or less. 1.2. Ferric acid ion (Fe042·) The chemical mechanical honing water-based dispersion of the embodiment contains ferrite ions (Fe042'). General chemical mechanical honing water-based dispersions Persulfate (peroxodisulfate) such as hydrogen peroxide or ammonium persulfate is used as an oxidizing agent. -12-201139633 is used as an oxidizing agent. It is known that the persulfate is made acidic by making the pH of the chemical mechanical honing water-based dispersion acidic. The same oxidation as peroxydisulfate. The oxidation-reduction potential of the standard electrode is hydrogen peroxide: 1.8 V and persulfate (peroxodisulfate): 2.0 V. The ferric acid ion whose iron oxidation number is VI is high as the oxidation-reduction potential of the standard hydrogen electrode is as high as 2.2 V. The ferric acid ion can have strong oxidation of the surface of the metal film by having such a high oxidation-reduction potential. The honing speed of the metal film is greatly increased. The ferric acid ion is generated by dissolving at least one selected from ferrite such as potassium ferrite, barium ferrite, sodium ferrite, and ammonium ferrite in a dispersion medium such as water. Among these, potassium ferrite is preferably used from the viewpoint of residual contamination of the semiconductor device and solubility in water. By using ferrite ions, it can be greatly reduced in the slurry containing iron ions in the past. For question After the honing, the residual iron ions are contaminated by the honing surface. As described above, since the ferric acid ions have a high oxidation-reduction potential, a small amount of addition can effectively oxidize the surface of the metal film. More specifically, chemical mechanical 硏The concentration of ferrite ions in the water-based dispersion is preferably 1 (T6 mol/L or more and 10-2 mol/L or less, more preferably 1 (T5 mol/L or more and 10_4 mol/L or less. When the concentration of ferric acid ions is within the above range) The metal film can achieve sufficient honing speed and reduce the occurrence of residues from ferric acid ions. Ferric acid ions are chemically unstable due to strong reactivity, and can be made of copper or tungsten under neutral to acidic conditions. When the metal is strongly oxidized, on the contrary, 'cheng-13-201139633 is a chemical mechanical honing water dispersion is unstable. Therefore, when preparing a chemical mechanical honing water dispersion, it is necessary to add and mix the necessary amount of ferrite before the honing, but it is preferable to exhibit stable honing characteristics. Further, since ferrite ions have a property of being decomposed by light, it is preferable to shield light when storing a chemical dispersion for chemical mechanical honing. 1.3. Dispersion medium The chemical mechanical honing water dispersion of the present embodiment contains a dispersion medium. The dispersion medium is exemplified by a mixed medium of water, water and an alcohol, a mixed medium containing water and an organic solvent compatible with water, and the like. Among these, water, water and an alcohol mixed medium are preferred, and water is preferably used. 1.4. Other Additives The chemical mechanical honing water-based dispersion of the present embodiment may be added with an additive such as an oxidizing agent, a water-soluble polymer, a surfactant, an amino acid, a complex forming agent, or a pH adjuster as needed. The following is a description of each additive. 1.4.1. Oxidant The chemical mechanical honing water dispersion of the present embodiment may be added with an oxidizing agent as needed. The oxidizing agent has an effect of oxidizing the surface of the metal film and promoting a misalignment reaction with the composition of the honing liquid, thereby creating a weak modified layer on the surface of the metal film and being easily honed. Further, the ferric acid ion also functions as an oxidizing agent, but the term "oxidizing agent" as used in the present invention means a component other than ferric acid from -14 to 201139633. The oxidizing agent is exemplified by, for example, ammonium persulfate, potassium persulfate, hydrogen peroxide, iron nitrate, diammonium nitrate planer, iron sulfate, hypochlorous acid, ozone, potassium periodate, and peracetic acid. These oxidizing agents may be used alone or in combination of two or more. Further, in the oxidizing agent, at least one selected from ammonium persulfate, potassium persulfate and hydrogen peroxide is preferred in view of oxidizing power, compatibility with the protective film, and ease of handling. In particular, when the chemical mechanical honing aqueous dispersion for a tungsten film is used, it is preferable to contain at least one selected from hydrogen peroxide and ammonium persulfate (hereinafter also referred to as "specific oxidizing agent"). When the persulfate is added to the chemical mechanical honing water-based dispersion, it is considered that hydrogen peroxide is generated by oxidizing one of the water in the aqueous dispersion by using ammonium persulfate. As a result, the effect is weaker than when the amount of hydrogen peroxide is directly added, but the same effect as when hydrogen peroxide is added can be expected. In the chemical mechanical honing of the dispersion for the tungsten film, it is considered that the reaction represented by the following formula (2) is promoted by using ferrite ions and a specific oxidizing agent. W + K2Fe〇4 + H2〇2^FeW〇4 + 2KOH (2) It is considered that the surface of the tungsten film is oxidized by the reaction to form a weak modified layer on the surface of the tungsten film. There are those who can easily honing the effect of the tungsten film. As described above, by multiplying the effect of ferric acid ions with a specific oxidizing agent, the honing speed of the tungsten film can be greatly improved by -15-201139633 degrees as compared with the case of using the above alone. The content of the oxidizing agent is preferably 0.01% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 3% by mass or less, more preferably 0.5% by mass or more, based on the total mass of the chemical mechanical honing aqueous dispersion. Below mass%. When the content of the oxidizing agent is in the above range, the reaction represented by the above formula (2) can be further promoted, and it is preferred. 1.4.2. Water-Soluble Polymer The chemical mechanical honing water-based dispersion of the present embodiment may be added with a water-soluble polymer as needed. The water-soluble polymer can suppress the occurrence of dents or the like by forming a film on the surface of the surface to be honed, and has an effect of further improving the flatness of the surface to be honed. In particular, when the tungsten film is contained on the honed surface, it is easy to adsorb on the surface of the tungsten film having irregularities to form a protective film, thereby achieving the effect of controlling the tungsten film honing. That is, by using an appropriate amount of the water-soluble polymer, the convex portion can be honed while protecting the concave portion of the tungsten film, and the initial step can be eliminated. The water-soluble polymer is not particularly limited, and examples thereof include an anionic polymer, a cationic polymer, and a nonionic polymer. The anionic polymer is exemplified by polyacrylic acid, polymethacrylic acid, polystyrenesulfonic acid, and the like. Cationic polymers are exemplified by, for example, polyalkyleneimine, polyvinylpyrrolidone, polyvinylamine, polyvinylpyridine, polyallylamine' polyvinylpiperidine, polylysine, polyvinylimidazole Wait. Among these cationic polymers, a polyalkyleneimine, preferably a polyethylenimine, is preferred. The nonionic polymer is exemplified by, for example, polyethylene oxide, polyepoxy-16-201139633 alkane, polyvinyl alcohol, polypropylene decylamine or the like. These water-soluble polymers may be used alone or in combination of two or more. The number average molecular weight of the water-soluble polymer is preferably from 200 to 100,000, more preferably from 10,000 to 100,000. In the present invention, the "number average molecular weight" is a polypulmonium conversion, and the gel permeation chromatograph (the column type "Shodex Asahipak GF-710HQ + GF-510HQ + GF-3 1 OHQ" Showa Denko can be used. Manufactured by the company, the separation liquid "0.2M monoethanolamine aqueous solution" was measured. The content of the water-soluble polymer is preferably 0.01% by mass or more and 5% by mass or less, more preferably 1% by mass or more and 1% by mass or less based on the total mass of the chemical mechanical honing water-based dispersion. When the number average molecular weight and content of the water-soluble polymer are within the above range, when the tungsten film is contained on the honed surface, the tempering friction can be appropriately reduced by the protective film formed on the tungsten film, so that the flatness of the tungsten film can be further improved. Sex. 1.4.3. Surfactant The chemical mechanical honing aqueous dispersion of the present embodiment may be added with a surfactant as needed. The surfactant has an effect of imparting a moderate viscosity to the aqueous dispersion for chemical mechanical honing. The viscosity of the chemical mechanical honing water dispersion is preferably adjusted to be less than 10 mPa*s at 25 ° C and less than 10 mPa.s. By imparting a moderate viscosity to the chemical mechanical honing water dispersion, the pressure applied to the honing pad can be efficiently and uniformly transmitted to the surface to be honed, and in particular, the flatness of the honed surface can be improved. The surfactant is not particularly limited, and examples thereof include an anionic interface activity -17-201139633 agent, a cationic surfactant, and a nonionic surfactant. The anionic surfactant is exemplified by a carboxylate such as a fatty acid soap or an alkyl ether carboxylate; a sulfonate such as an alkylbenzenesulfonate, an alkylnaphthalenesulfonate or an α-olefinsulfonate; a sulfate salt such as an ester salt, an alkyl ether sulfate or a polyoxyethylidene phenyl ether sulfate; a phosphate salt such as an alkyl phosphate; a fluorine-containing surfactant such as a perfluoroalkyl compound. The cationic surfactant is exemplified by, for example, an aliphatic amine salt, an aliphatic ammonium salt, and the like. Examples of the nonionic surfactant include nonionic surfactants having a triple bond such as acetylene glycol, acetylene glycol ethylene oxide adduct, and acetylene alcohol; and polyethylene glycol type surfactants. Further, polyvinyl alcohol, cyclodextrin, polyvinyl methyl ether, hydroxyethyl cellulose or the like can also be used. Among the surfactants exemplified above, in view of maintaining the flatness of the tungsten film in the first honing step, it is preferred to use an alkylbenzenesulfonate, more preferably dodecylbenzenesulfonate. Potassium acid, ammonium dodecylbenzenesulfonate. These surfactants may be used alone or in combination of two or more. The content of the surfactant is preferably 0.001% by mass or more and 5% by mass or less, more preferably 0.01% by mass or more and 0.5% by mass or less, and more preferably 0.05% by mass or more based on the total mass of the chemical mechanical honing aqueous dispersion. 0.2% by mass or less. When the content of the surfactant is within the above range, the occurrence of the depression of the honed surface can be suppressed and the honing can be performed, so that the flatness of the honed surface can be further improved. 1.4.4. Amino acid The chemical mechanical honing water dispersion of this embodiment may be added with an amino acid as needed in -18-201139633. The amino acid has a property of easily forming a coordinate bond with copper ions. Accordingly, when the copper film is honed on the surface, the amino acid forms a coordinate bond on the surface of the copper film. By this action, the surface roughness of the copper film can be suppressed to ensure high flatness of the surface to be honed. As described above, since the amino acid is excellent in affinity with the copper film and the copper ion, the honing speed of the copper film can be improved, and at the same time, it can be dissolved in the chemical mechanical honing water-based dispersion by honing of the copper film. The copper ions form a coordination bond thereby suppressing copper precipitation. By suppressing the precipitation of copper in the aqueous dispersion for chemical mechanical honing, it is possible to suppress the occurrence of honing defects such as scratches on the copper film. Amino acids are exemplified by, for example, alanine, arginine, aspartame, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine. , leucine, lysine, methionine, phenylalanine, valine, serine, threonine, tryptophan, tyrosine, valine and the like. These amino acids may be used alone or in combination of two or more. The chemical mechanical honing aqueous dispersion of the present embodiment preferably contains at least one selected from the group consisting of glycine, alanine and glutamic acid in the amino acid exemplified above. This is because glycine, alanine and glutamic acid are stronger in the above-exemplified amino acid due to the formation of a coordinate bond with a copper ion, so that the effect of increasing the honing speed of the copper film is higher. These 'supreme' preferably contain such high-efficiency glycine. The content of the amino acid is preferably 0.5% by mass or more and 10% by mass or less based on the total mass of the chemical mechanical honing water-based dispersion. More preferably, it is 1% by mass or more and 6% by mass or less, and more preferably 2% by mass or more. 4% by mass or less -19-201139633 1·4·5. Complex composition forming agent The chemical mechanical honing water-based dispersion of the present embodiment may further contain a complex forming agent as needed. The complex forming agent has the effect of forming a water-insoluble complex with tungsten and protecting the surface of the surface to be honed. By this effect, the convex portion can be honed while protecting the concave portion of the tungsten film, and the initial step can be eliminated. Here, "water-insoluble" means that it is substantially insoluble in water, and if the wet etching rate in the state of coexistence with an oxidizing agent is less than 3 nm/min, it also contains water-insoluble property. The complex forming agent is preferably a compound having at least a heterocyclic ring in the structure, more preferably a compound having at least one heterocyclic ring selected from a heterocyclic ring having a nitrogen atom and a heterocyclic ring in the structure. The heterocyclic ring is exemplified by a heterocyclic ring such as a pyrrole structure, an imidazole structure or a triazole structure; a heterocyclic ring such as a pyridine structure, a pyrimidine structure, a pyridazine structure or a piperidine structure. The heterocyclic ring can also form a condensed ring. The heterocyclic ring is exemplified by, for example, an anthracene structure, an isoindole structure, a benzimidazole structure, a benzotriazole structure, a quinoline structure, an isoporphyrin structure, a quinazoline structure, a porphyrin structure, a pyridazine structure, and a quinine. An oxazoline structure, an acridine structure, and the like. Among these heterocyclic compounds, a compound having a pyridine structure, a quinoline structure, a benzimidazole structure, or a benzotriazole structure is preferred. More specifically, quinolinic acid, quinaldic acid, benzimidazole, and benzotriazole are preferred, and quinolinic acid and quinalic acid are more preferred. These complex forming agents may be used alone or in combination of two or more. The content of the complex forming agent is preferably 0.01% by mass or more and 10% by mass or less based on the total mass of the chemical mechanical honing water-based dispersion, and more preferably -20 to 201139633, preferably 0.02% by mass or more and 5% by mass or less, most It is preferably 0.1% by mass or more and 2% by mass or less. When the content of the complex forming agent is within the above range, the initial step of the tungsten film can be eliminated while honing, so that the flatness of the honed surface can be further improved. 1.4.6. pH Adjusting Agent The chemical mechanical honing water-based dispersion of the present embodiment may be further added with a pH adjusting agent as needed. The pH adjuster is exemplified by an alkaline salt such as potassium hydroxide, ethylenediamine or TMAH (tetramethylammonium hydroxide); an organic acid such as capric acid, maleic acid or citric acid; and a salt thereof; nitric acid, hydrochloric acid, sulfuric acid, etc. Inorganic acids and their salts. In particular, the above-exemplified pH adjusting agent having two or more carboxyl groups not only has a high coordination ability for the wiring metal but also for the metal species of the stable multivalent ion used in the barrier metal film, so that the wiring metal or the barrier can be used. The multivalent ionization of the honing of the metal film can reduce the precipitation of the metal salt. According to this, it is possible to suppress the surface roughness of the surface to be honed and to obtain a high degree of flatness, and at the same time, to reduce the occurrence of surface defects such as scratches.

1.5. pH 本實施形態之化學機械硏磨用水系分散體之pH並無 特別限制，較好爲1以上1 0以下。本實施形態之化學機 械硏磨用水系分散體使用時之pH較好爲1以上6以下。 尤其是鎢膜用化學機械硏磨用水系分散體之pH在前述範 圍內時，化學機械硏磨用水系分散體與鎢膜之反應性變良 -21 - 201139633 好’而且由於可使鐵酸離子顯示最適合氧化力故較佳。另 一方面’儲存本實施形態之化學機械硏磨用水系分散體時 ’ pH較好在7以上10以下。化學機械硏磨用水系分散體 之pH爲前述範圍之鹼性時，可抑制鐵酸離子之分解，可 提高化學機械硏磨用水系分散體之儲存安定性故較佳。 1.6.用途 本實施形態之化學機械硏磨用水系分散體之用途之一 例列舉爲作爲硏磨形成半導體裝置之配線之銅膜用之硏磨 材之用途。具體而言，可作爲形成Cu鑲嵌配線時之硏磨 材使用。利用硏磨形成Cu鑲嵌配線之步驟係包含主要進 行銅膜去除之第一硏磨步驟及主要去除形成於銅膜下部之 導電性障壁金屬膜之第二硏磨步驟，但該化學機械硏磨用 水系分散體若用於第一硏磨步驟則爲有效。又，本實施形 態之化學機械硏磨用水系分散體可同時達到對金屬膜之高 硏磨速度及高平坦性，故亦可用於第二硏磨步驟。 另外，第一硏磨步驟有時分成在障壁金屬膜露出之前 以高速硏磨堆積之銅膜之步驟（整體硏磨步驟），使整體 硏磨步驟中殘留之銅膜硏磨至障壁金屬膜露出之硏磨步驟 (精硏磨步驟）而實施。本實施形態之化學機械硏磨用水 系分散體由於可邊維持平坦性邊以高速硏磨配線材料之銅 膜，故可有效使用於整體硏磨步驟中。 本實施形態之化學機械硏磨用水系分散體之一用途列 舉爲作爲硏磨形成半導體裝置之配線之鎢膜用之硏磨材之 -22- 201139633 用途。具體而言，可使用於形成導線連接用鎢栓柱時之化 學機械硏磨步驟中。 至於被處理體列舉爲含有具有通孔之絕緣膜與透過障 壁金屬膜設置於前述絕緣膜上之鎢膜之被處理體等。該被 處理體之化學機械硏磨步驟係包含主要爲去除鎢膜之第一 硏磨步驟，與主要同時硏磨形成於其下部之鎢膜、障壁金 屬膜及絕緣膜之第二硏磨步驟，但本實施形態之化學機械 硏磨用水系分散體就具有對鎢膜之高硏磨速度之觀點而言 ，用於第一硏磨步驟中爲有效。再者，本實施形態之化學 機械硏磨用水系分散體具有對於鎢膜及氧化矽膜之非選擇 性之硏磨性，故亦可用於第二硏磨步驟中。 2 .化學機械硏磨方法 本實施形態之化學機械硏磨方法之特徵爲利用前述本 發明之化學機械硏磨用水系分散體硏磨含銅膜或鎢膜之半 導體基板（晶圓等）。以下，利用圖式詳細說明本實施形 態之化學機械硏磨法之第一具體例及第二具體例。 2.1. 第一具體例 2.1.1. 被處理體 圖1爲模式性顯不適用於第一具體例之化學機械硏磨 方法之被處理體之剖面圖。被處理體1 00係藉由經歷以下 步驟（1)至（4)而形成。 (1)首先，如圖（1)所示，準備基體10。基體10 -23- 201139633 可由例如矽基板與形成於其上之氧化矽膜所構成。而且， 基體10上亦可形成（未圖示）電晶體等之機能裝置。接 著.，使用CVD法或熱氧化法，於基體1 〇上形成絕緣膜的 氧化矽膜1 2 » (2 )接著，使氧化矽膜1 2圖型化。以所得圖型作爲 遮罩’利用微影法在氧化矽膜1 2上形成配線用溝槽1 4。 (3) 接著’使用濺鍍在氧化矽膜12之表面及內壁面 上形成障壁金屬膜16。銅膜與氧化矽膜12之電接觸堪稱 不佳，但透過障壁金屬膜1 6得以實現良好之電接觸。障 壁金屬膜1 6之材料列舉爲鉅、氮化鉬、鈦、氮化鈦等。 (4) 接著，使用CVD法形成銅膜18。形成銅膜18 之銅不僅爲純銅’亦可包含銅-矽、銅-鋁等含有95重量％ 以上銅之合金。 2 · 1.2 ·硏磨方法 2.1.2.1.第一硏磨步驟 圖2爲模式性顯示第一具體例之第一硏磨步驟結束時 之被處理體之剖面圖。如圖2所示，第一硏磨步驟爲使用 本發明之化學機械硏磨用水系分散體硏磨銅膜18直至障 壁金屬膜16露出爲止之步驟。依據本步驟，藉由使用前 述化學機械硏磨用水系分散體，可降低被處理體1〇〇之金 屬污染’同時兼具對銅膜18之高硏磨速度與被硏磨面之 高平坦性。 -24- 201139633 2.1.2.2. 第二硏磨步驟 圖3爲模式性顯示第一具體例之第二硏磨步驟結束時 之被處理體之剖面圖。如圖3所示，第二硏磨步驟爲使用 化學機械硏磨用水系分散體硏磨障壁金屬膜16及銅膜18 直至氧化矽膜12露出爲止之步驟。又，前述本發明之化 學機械硏磨用水系分散體可兼具對金屬膜之高硏磨速度與 高平坦性，故亦可用於第二硏磨步驟。 2.2. 第二具體例 2.2.1.被處理體 圖4爲模式性顯示適用於第二具體例之化學機械硏磨 方法之被處理體之剖面圖。被處理體200係藉由經歷以下 步驟（1 )至（4 )而形成。 (1)首先，如圖4所示，準備基體11。基體11可 由例如矽基板與形成於其上之氧化矽膜所構成。而且，基 體1 1上亦可形成（未圖示）電晶體等機能裝置。接著， 使用CVD法或熱氧化法，於基體1 1上形成絕緣膜的氧化 矽膜1 3。 (2 )接著，使氧化矽膜1 3圖型化。以所得圖型作爲 遮罩，利用微影法在氧化矽膜1 3上形成通孔1 5。 (3)接著，使用濺鍍在氧化矽膜13之表面及內壁面 上形成障壁金屬膜17。鎢膜與氧化矽膜13之電接觸堪稱 不佳，但透過障壁金屬膜1 7而實現良好之電接觸。障壁 金屬膜1 7之材料列舉爲鉬、氮化鉬、鈦、氮化鈦等。 -25- 201139633 (4 )接著，使用CVD法形成鎢膜19。 2.2.2化學機械硏磨方法 2.2.2.1. 第一硏磨步驟 圖5爲模式性顯示第二具體例之第一硏磨步驟結束時 之被處理體之剖面圖。如圖5所示，第一硏磨步驟爲使用 前述本發明之化學機械硏磨用水系分散體硏磨鎢膜19直 至障壁金屬膜17露出爲止之步驟。依據本步驟，藉由使 用前述本發明之化學機械硏磨用水系分散體，可降低被處 理體200之金屬污染，同時可兼具對鎢膜19之高硏磨速 度與被硏磨面之高平坦性。 2.2.2.2. 第二硏磨步驟 圖6爲模式性顯示第二具體例之第二硏磨步驟結束時 之被處理體之剖面圖。如圖6所示，第二硏磨步驟爲使用 化學機械硏磨用水系分散體硏磨障壁金屬膜17及鎢膜19 直至氧化矽膜13露出爲止之步驟。又，前述本發明之化 學機械硏磨用水系分散體具有對鎢膜及氧化矽膜之非選擇 硏磨性，故亦可用於第二硏磨步驟中。於第二硏磨步驟中 使用本發明之化學機械硏磨用水系分散體，因而可獲得平 坦性極優異之修飾面。 2.3.化學機械硏磨裝置 前述之第一硏磨步驟及第二硏磨步驟可使用例如圖7 -26- 201139633 所示之硏磨裝置300。圖7爲模式性顯示硏磨裝置3〇〇之 立體圖。各硏磨步驟係自漿料供給噴嘴42供給漿料（化 學機械硏磨用水系分散體）44，且邊旋轉貼附有硏磨布 46之旋轉台48，邊抵接保持半導體基板50之承載頭52 而進行。又，圖7中亦合倂顯示供水噴嘴54及砂輪56。 承載頭52之硏磨荷重可在0.7〜70psi之範圍內選擇 ，較好爲2.1〜35psi。且’旋轉台48及承載頭52轉數可 在10〜400rpm之範圍內適當選擇，較好爲30〜l5〇rpm。自 漿料供給噴嘴42供給之漿料（硏磨用組成物）44之流量 可在10〜l，000mL/分鐘之範圍內選擇，較好爲50〜400mL/ 分鐘。 市售之硏磨裝置列舉爲例如荏原製作所公司製造之型 號「EPO-112」、「EPO-222」；Lapmaster SFT 公司製造 ，型號「LGP-510」、「LGP-552」；應用材料公司製造 ，型號「Mirra」、「R e f 1 e x i ο η」等。 3.化學機械硏磨用水系分散體調製用套組 本實施形態之化學機械硏磨用水系分散體可藉由將硏 磨粒 '形成鐵酸離子之化合物、及其他添加劑直接添加於 純水中，並經混合•攪拌而調製。如此獲得之化學機械硏 磨用水系分散體可直接使用，亦可調製以高濃度含有各成 分（經濃縮）之化學機械硏磨用水系分散體*且在使用時 稀釋成期望之濃度而使用。 另外，亦可調製含上述成分之任一種之複數種液體（ -27- 201139633 例如2或3種液體），在使用該等時使之混合之套組。藉 由分成含上述成分之任一種之複數種液體，可提高儲存安 定性。此時，混合複數種液體調製化學機械硏磨用水系分 散體後，可將其供給於化學機械硏磨裝置中，亦可將複數 種液體個別供給於化學機械硏磨裝置中，而在壓盤上調製 化學機械硏磨用水系分散體。 以下，針對本發明之化學機械硏磨用水系分散體調製 用套組之最佳實施形態加以說明。 本發明之一實施形態之化學機械硏磨用水系分散體調 製用套組爲用以調製前述化學機械硏磨用水系分散體之套 組，其特徵爲包含含有鐵酸離子（Fe042·)及水之第一組 成物，與含有硏磨粒及分散介質之第二組成物。 第一組成物可藉由將由鐵酸鉀、鐵酸鋇、鐵酸鈉及鐡 酸銨等鐡酸鹽所選出之至少一種溶解於水中而調製。第一 組成物中含有之鐵酸離子在中性至酸性條件下特別不安定 。因此，第一組成物之p Η較好爲7以上1 0以下，更好 爲8以上10以下。又，鐵酸離子具有因光分解之性質， 故儲存第一組成物時較好裝入遮光性之容器等中儲存。又 ’第一組成物就防止鐵酸離子與其他成分反應或鐵酸離子 分解之觀點而言，較好不添加其他添加劑。 第二組成物可藉由將硏磨粒添加於分散介質中而調製 。第二組成物可在不損及硏磨粒分散安定性之範圔內添加 其他添加劑。 依據該化學機械硏磨用水系分散體調製用套組，藉由 -28- 201139633 將化學上不安定之鐵酸離子（Fe042·)與其他成分分開儲 存，可抑制鐵酸離子（Fe042_ )之分解。只要在恰要使用 前混合第一組成物與第二組成物，調製化學機械硏磨用水 系分散體，即可將化學機械硏磨用水系分散體之性能發揮 至最大限度。 又本實施形態之化學機械硏磨用水系分散體調製用套 組亦包含藉由將由過氧化氫、過硫酸鉀及過硫酸銨所選出 之至少一種溶解於水中調製而成之第三組成物。又，第三 組成物就防止氧化劑與其他成分反應或氧化劑分解之觀點 而言，較好不添加其他添加劑。 再者，第一組成物與第三組成物較好儘可能在進行化 學機械硏磨之前混合，且混合後在短時間內使用。自混合 至進行化學機械硏磨爲止之時間較好爲1秒後至7天後， 更好爲1秒後至1小時後。又，混合舊的混合液與新的混 合液使用時品質上較不好，故較好線上混合或批次混合。 4.實施例 以下，以實施例說明本發明，但本發明並不受該等實 施例之任何限制。 4.1. 化學機械硏磨用水系分散體之調製 4.1.1. 膠體二氧化矽水分散體之調製 以水稀釋3號水玻璃（二氧化矽濃度2 4質量％ )， 獲得二氧化矽濃度3.0質量％之稀釋矽酸鈉水溶液。使該 -29- 201139633 稀釋之矽酸鈉水溶液通過氫型陽離子交換樹脂，去除 分之鈉離子，獲得PH3.1之活性矽酸水溶液。隨後， 在攪拌下添加1 〇質量％之氫氧化鉀水溶液，將pH調 7.2，接著持續加熱至沸騰，熱熟成3小時。於所得 液中少量添加1 〇倍量之預先將pH調整至7.2之活性 水溶液，使膠體二氧化矽成長。 接著，減壓濃縮前述含有膠體二氧化矽之分散體 液，獲得二氧化矽濃度：3 2.0質量％，pH : 9.8之膠 氧化矽水分散體。使該膠體二氧化矽水分散體再度通 型陽離子交換樹脂層，去除鈉之大部分後，添加1〇 %之氫氧化鉀水溶液，獲得二氧化矽粒子濃度：28.0 %，pH : 10.0之膠體二氧化矽水分散體（a) ^ 自使用BET法測定之比表面積計算出之平均粒 45 nm。再者，以BET法測定膠體二氧化矽粒子之表 係使用將二氧化矽粒子濃縮•乾固並經回收而測定膠 氧化矽之値。又，比表面積之測定係使用流動式比表 自動測定裝置（島津製作所股份有限公司製造 M i c r 〇 m e t r i c s F1 〇 w S 〇 r b 11 2 3 0 0」）。 進而，邊控制熱熟成時間、鹼性化合物之種類及 量等邊界由與上述相同之方法，獲得自使用BET法 之比表面積計算出之平均粒徑爲80nm之膠體二氧化 分散體（b)。 4.1.2.化學機械硏磨用水系分散體之調製 大部 立即 整至 水溶 矽酸 水溶 體二 過氫 質量 質量 徑爲 面積 體二 面積 添加 測定 矽水 -30- 201139633 將離子交換水50質量份、換算成二氧化矽相當於3 質量份之膠體二氧化矽水分散體（a)、換算成二氧化矽 相當於3質量份之膠體二氧化矽水分散體（b)、鐵酸鉀 0.0 06質量份、馬來酸0.1質量份倒入聚乙烯製之瓶中且 攪拌15分鐘。此時，鐵酸紳係使用 Ferrate Treatment Technologies公司製造之鐵酸製造機的「Ferrator」而準 備。最後，以使全部成分之合計量成爲100質量份之方式 將離子交換水添加於聚乙烯製之瓶後，以孔徑1 μιη之過 濾器過濾，獲得化學機械硏磨用水系分散體Α。 另外，除將鐵酸鉀變更爲表1所示之成分•添加量， 且將添加劑之種類變更爲表1所示之成分·添加量以外， 餘與化學機械硏磨用水系分散體A之調製方法同樣獲得 化學機械硏磨用水系分散體B〜X。 4.2.化學機械硏磨用水系分散體之評價試驗 4.2.1.銅膜之評價試驗 4 · 2 . 1 · 1 .銅膜之硏磨速度評價 將多孔質聚胺基甲酸酯製之硏磨墊（RODEL NITTA 公司製造，產品編號「IC1000」）安裝於硏磨裝置（應用 材料公司製造，形式「Mirra」）上，一邊供給硏磨用組 成物A~L之任一種，一邊對下述之硏磨速度測定用基板 ，以下述硏磨條件進行硏磨處理30秒，以下述方法計算 出硏磨速度。 -31 - 201139633 (a)硏磨速度測定用基板 •8吋之貼附熱氧化膜之矽基板上設置膜厚15,0〇〇埃 之銅膜者。 (b )硏磨條件 •承載頭轉數：lOOrpm •旋轉台轉數：l〇〇rpm •承載頭荷重：3.5psi •硏磨用組成物之供給速度：200mL/分鐘 該情況下之硏磨用組成物之供給速度爲將全部供給液 之供給量合計除以每單位時間之値。 (c )硏磨速度之計算方法 使用導電式膜厚測定裝置（KLA-Tencor公司製造， 形式「OMUNIMAP RS75」），測定硏磨處理前後之膜厚 ，且由硏磨所減少之膜厚與硏磨時間計算出硏磨速度。結 果合倂列於表1中。 對銅膜之硏磨速度在以上之條件下以50nm/分鐘以上 爲較佳，該情況下於表1中之評價欄記爲「〇」。另外， 對銅膜之硏磨速度未達50nm/分鐘時，無法使用於實際裝 置，故在表中之評價欄中記爲「X」。 4.2.1.2.貼附圖型之晶圓平坦性評價 -32- 201139633 形成有成爲配線圖型之溝槽之圖型晶圓之化學機械硏 磨已知會發生局部過度硏磨之部位。該等係由於在化學機 械硏磨前之圖型晶圓表面上，金屬膜之表面上形成反映成 爲配線圖型之溝槽的凹凸，進行化學機械硏磨時依據圖型 密度而局部施加高的壓力，使其部份之硏磨速度加速之故 。因此，藉由硏磨模擬半導體基板之圖型晶圓且評價，確 認本實施形態之化學機械硏磨用水系分散體之實際使用狀 態下之硏磨特性。 針對下述貼附圖型之晶圓，除硏磨時間設爲一分鐘以 外，餘與前述「4.2.1.1.銅膜之硏磨速度評價」之硏磨條 件同樣進行硏磨處理，藉由下述方法評價平坦性及缺陷之 有無。其結果合併示於表1。 (1 )附圖型之基板 成膜有400nm之PETEOS膜之8吋晶圓係使用加工 成「SEMATECH 8 5 4」圖型，形成深400nm之溝槽圖型後 ，層合25nm之Ti/TiN膜，進而層合600nm銅膜之試驗 用基板（SEMATECH INTERNATIONAL 公司製造）。 (2 )平坦性之評價 使用高解像度Frofiler ( KLA-Tencor公司製造，型號 「HRP240ETCH」），對硏磨處理步驟後之附圖型之晶圓 之被硏磨面，測定銅配線寬（線，L )/絕緣膜寬（間隔， S)分別爲100μπι/100μιη之銅配線部份中之凹陷量（nm) -33- 201139633 。凹陷量爲〇~l 〇〇nm判斷爲較好，爲〇〜90nm時爲更好， 爲0~60nm時爲最好。 凹陷量爲〇〜l〇〇nm時，表1中之評價欄記爲「〇」 。另外，凹陷量在l〇〇nm以上時，無法適用實際裝置， 在表中評價欄中記爲「X」。 4.2.1.3.銅膜之殘留鐵量評價 同樣使用前述「4·2·1.1.銅膜之硏磨速度評價」中之 (a )硏磨速度測定基板及（b )硏磨條件進行硏磨：如下 述評價銅膜之殘留鐵量。殘留鐵量係使用全反射螢光X 射線分析裝置（Rigaku公司製造，「TXRF V300」）進行 被硏磨面之表面分析。具體而言，自硏磨之8吋晶圓中心 於6 0mm之部位照射8KeV之X射線，由該部位產生之螢 光X射線之波長估算元素之種類及由強度估計濃度•量。 由於含有鐵系化合物作爲添加劑，故鐵存在時，由特異出 現之0 · 3 nm之螢光X射線之強度獲得前述之檢出濃度。 結果合倂示於表1中。殘留鐵量在0.2x1 〇1(>原子/cm2以 下時，裝置之性能方面較佳。該情況在表中之評價欄中記 爲「〇」。又，超過0.20xl01Q原子/cm2時’不適用於實 際裝置，在表中評價欄中記爲「X」。 -34- 201139633 1比較例3 1 -J q rS s 1 1 1 |馬來酸I 5 1 1 CM X ο 0 I 0.2以下| 〇 比較例2 ο ή s 1 1 1 |馬來酸 硝酸鐵 2 S 〇 S Ο 10.2 X 比較例1 Ο co s 1 1 丨馬來酸 5 硝酸鐵 0.006 S X ΙΟ Ο I 0.2以下 〇 實施例9 — Ο CO 5 鐵酸鉀 0.006 2.0x10"* 馬來酸 過硫酸銨 5 S Ο ΙΟ ο 0.2以下 〇 實施例8 I ο s 鐵酸飼 0.006 2.0 X 10"5 Γΐ來酸] 5 過氧化氫 5 eg 〇 Ο Β ο | 0.2以下 〇 實施例7 〇 ο CO s 鐵酸鉀 0.006 2.0X10^ 「馬來酸 5 甘胺酸 5 σ Ο ο ο Γ〇·2以下 〇 實施例6 Ll S s 鐵酸錦 0.006 2.0 Χ10'5 馬來酸^ 5 丙二，1 5 卜_ s Ο S ο | 0.2以下| 〇 實施例5 Ui S s 鐵酸鉀 CD 2.0 Χ10"2 丨馬來酸1 5 1 1 300 ο S ο «NJ 〇 實施例4 Ο 5 s i鐵酸钟 r> 1.0 χίο·2 馬來酸 5 Ί 1 3 § ο S ο 〇 實施例3 ϋ q o 丨鐵酸钟 CD ο 2.〇x 10~3 馬來酸 5 1 1 OI c\i 120 ο S 〇 0·2以下 〇 實施例2 CD p en s 鐵酸钟 0.0006 2.0 x 10"6 丨馬來酸] 5 1 1 s ο S ο 0.2以下 〇 實施例1 < S s 丨鐵酸鉀 0.006 2.0 x 1〇*5 Ρ來酸 5 1 1 s ο W ο 0.2以下 〇 化學機械硏磨用水系分散體種類 c4 i卜 ffiiH /—V 槭酗 11 w 醒ιΗ 幽如 駿 W 含量（質暈份） gjg 猫 味_ 爷1 15¾ si 趙饑 珊樹 種類 含量（質量份） 種類 . . _1 含量（質量份） 化學機械硏磨用水系分散體之PH 硏磨速度（nm/分） 判定 凹陷（nm) 判定 鐵濃度（Χίο"1原子/cm2) 判定 硏磨粒 鐵酸離子 其他添加劑 I 硏磨速度評價 平坦性評價 殘留鐵評價 -35- 201139633 4·2.2·鎢膜之評價試驗 4·2·2·1·鎢膜之硏磨速度評價 將多孔質聚胺基甲酸酯製之硏磨墊（RODEL ΝΙΤΤΑ 公司製造，型號「IC10 00」）安裝於化學機械硏磨裝置（ 應用材料公司製造，形式「Mirra」）上，一邊供給化學 機械硏磨用水系分散體Μ〜X之任一種，一邊對下述硏磨 速度測定用基板，以下述硏磨條件進行硏磨處理3 0秒， 以下述方法算出硏磨速度。 (a )硏磨速度測定用基板 •於8吋之貼附熱氧化膜之矽基板上設置膜厚8,0〇〇 埃之鎢膜者。 (b )硏磨條件 •承載頭轉數：80rpm •旋轉台轉數：80rpm •承載頭荷重：3.5psi •化學機械硏磨用水系分散體之供給速度：120mL/分鐘 該情況下之化學機械硏磨用水系分散體之供給速度爲 將全部供給液之供給量合計除以每單位時間之値。 (c)硏磨速度之計算方法 使用導電式膜厚測定裝置（KLA-Tencor公司製造， -36- 201139633 形式「OMUNIMAP RS75」）’測定硏磨處理前後之膜厚 ’由硏磨所減少之膜厚與硏磨時間計算出硏磨速度。結果 合倂列於表2中。 對鎢膜之硏磨速度，在以上之條件下以40nm/分鐘以 上爲較佳，該情況下於表1中之評價欄記爲「〇」。而且 ，以lOOnm/分鐘以上爲更好，該情況下於表1中之評價 欄記爲「◎」。另外，對鎢膜之硏磨速度未達40nm/分鐘 時’無法使用於實際裝置，故在表中之評價欄中記爲「X 4.2.2.2.附圖型之晶圓平坦性評價 針對下述之附圖型之晶圓，除硏磨時間設爲1分鐘以 外，餘與前述「4 · 2 · 2 · 1 ·鎢膜之硏磨速度評價」中之硏磨 條件同樣進行硏磨處理，以下述方法評價平坦性及缺陷之 有無。其結果合倂示於表2中。 (1 )附圖型之基板 成膜有4 00nm之PETEOS膜之8吋晶圓係使用加工 成「SEMATECH 8 54」圖型，形成深400nm之溝槽圖型後 ’層合25nm之Ti/TiN膜，進而層合600nm之鎢膜之試 驗用基板（SEMATECH INTERNATIONAL公司製造）。 (2 )平坦性之評價 使用高解像度Frofiler ( K L A - T e n c o r公司製造，型 -37- 201139633 號「HRP240ETCH」），對硏磨處理步驟後之附圖型之晶 圓之被硏磨面，測定鎢配線寬（線，L )/絕緣膜寬（間隔 ，S )分別爲1 0 0 μ m /1 0 0 μ m之錫配線部份中之凹陷量（n m )。凹陷量爲〇~1 〇〇nm時判斷爲較好’爲〇〜90nm時爲更 好，爲〇〜60nm時爲最好。凹陷量爲〇~1 〇〇nm時，表1中 之評價欄記爲「〇」。另外，平坦性在1 〇〇nm以上時’ 無法適用實際裝置，在表中之評價欄中記爲「X」。 4.2.3.鎢膜之殘留鐵量評價 同樣使用前述「4.2.2.1.鎢膜之硏磨速度評價」中之 (a)硏磨速度測定基板及（b)硏磨條件進行硏磨，與前 述「4.2.1.3銅膜之殘留鐵量評價」同樣評價鎢膜之殘留 鐵量。 -38- 201139633 【cs«】 比較例7 X 〇 r> s 1 1 過氧化氫 S |馬來酸| 〇· ί 1 s X ο 〇 1 0.2以下| 〇 比較例6 1 s 1 1 1 1 b來酸| d 1 o X ο 〇 0.2以下1 〇 丨比較例5 | > S s 1 1 1 |馬來酸 5 硝酸鐵 S o s ◎ 〇 CD 5 X 比較例4 s 1 1 1 f馬來酸Ί 5 I硝酸鐵 <0 S 〇 s X ο 〇 0.2以下| 0 實施例17 Η q s 2.0X10^ .過硫酸敍 |馬來酸| 5 \ 1 g Ο S 〇 | 〇.2以下| 〇 實施例16 CO S s CO o o 2.0 ΧΙΟ*5 過氧化氫 〇 馬來酸 d 「甘 5 o s ◎ 异 〇 | 0.2以下I 〇 實施例15 tx S s (O i 2*0 ΧΙΟ-5 過氧化氫 〇 |馬來酸| 5 丨丙二酸I 〇 8 r> ◎ S 〇 | 0.2以下| 〇 實施例14 Ο 3 s <9 2.0 κ 10'2 過氧化氫 5 P馬來酸| ο 1 1 s o ◎ tA σ> 〇 P4 〇 實施例13 a S n Ι.ΟκΙΟ"2 1過氧化氫I 5 1馬來酸1 5 1 1 B CO ◎ S 〇 〇 實施例12 ο S s o 2.0X10'* 1過氧化氫1 〇 馬來酸 5 1 1 CM g Φ ◎ S 〇 1 0.2以下i 〇 實施例11 ζ S s [0.0QQ5 2.0 ΧΙΟ** 過氧化氫Ί 〇 1馬來酸^ 5 1 1 o Ο ο 〇 0.2以下 _1 〇 實施例10 S s g p ζ.〇χ ΙΟ"6 氧化氫1 d |馬來酸| 5 1 1 d 8 ◎ 〇 〇·2以下 〇 化學機械硏磨用水系分散體種類 N (Q 訟a 1卜 狸4 -〇 |@ιΜ 含量（質量份） ϋ 味1 觀變 mm ㈣ |種類 含量（質量份） 種類 含量（質量份） 噯 W 含量（質量份） 1 Xa 硏磨速度（nm/分） 1 判定 1 凹陷（nm) 判定 鐵濃度〇1〇IQ原子/era2 ) 硏磨粒 鐵酸鉀 特定氧化劑 其他添加劑 -1 硏磨速度評價 -1 平坦性評價 殘留鐵評價 -39- 201139633 4.3 .評價結果 4.3 . 1 .銅膜之評價結果 使用實施例1〜5之化學機械硏磨用水系分散體時，於 銅膜之硏磨中達成高的硏磨速度，同時可獲得殘留鐵份充 分少之被硏磨面。又，由實施例1〜5之結果，清楚了解隨 著鐵酸離子變大，對銅膜之硏磨速度也變大。 實施例6〜7之化學機械硏磨用水系分散體相當於在實 施例1中進一步添加丙二酸及甘胺酸之組成。使用實施例 6〜7之化學機械硏磨用水系分散體時，亦可獲得幾乎與實 施例1相同之性能。 實施例8〜9之化學機械硏磨用水系分散體相當於在實 施例1中進一步添加過氧化氫及過硫酸銨作爲氧化劑之組 成，使用實施例8〜9之化學機械硏磨用水系分散體時，對 銅膜之硏磨速度比實施例1更大。 比較例1〜2之化學機械硏磨用水系分散體相當於添加 硝酸鐵代替鐵酸鉀之組成。比較例1之化學機械硏磨用水 系分散體中之硝酸鐵含量爲與實施例1之化學機械硏磨用 水系分散體中之鐵酸鉀含量同等之0.006質量份。然而， 硝酸鐵對銅膜之硏磨速度爲20nm/分鐘，無法獲得充分硏 磨速度。另一方面，比較例2之化學機械硏磨用水系分散 體中之硝酸鐵含量爲6質量份，雖對銅膜可獲得充分硏磨 速度，但會發生鐵份之殘留污染。 比較例3之化學機械硏磨用水系分散體由於未添加鐵 酸鉀或硝酸鐵，故無法獲得對銅膜之充分硏磨速度。 -40- 201139633 4.3.2.有關鎢膜之評價結果 使用實施例1 〇〜1 4之化學機械硏磨用水系分散體時， 於鎢膜之硏磨中達成高的硏磨速度，同時可獲得殘留鐵份 充分少之被硏磨面。又，由實施例10〜14之結果，清楚了 解隨著鐵酸離子變大，對鎢膜之硏磨速度也變大。 實施例15〜16之化學機械硏磨用水系分散體相當於在 實施例10中進一步添加丙二酸及甘胺酸之組成。使用實 施例1 5〜1 6之化學機械硏磨用水系分散體時，亦可獲得幾 乎與實施例1 〇相同之性能。 實施例1 7之化學機械硏磨用水系分散體相當於添加 過硫酸銨作爲氧化劑之組成。由實施例〗7之結果，相較 於添加適當量之過氧化氫之情況，推測對鎢膜之硏磨速度 提升變小，但可知於實際裝置之使用爲可能。 比較例4~5之化學機械硏磨用水系分散體相當於添加 硝酸鐵代替鐵酸鉀之組成。比較例4之化學機械硏磨用水 系分散體中之硝酸鐵含量爲與實施例10之化學機械硏磨 用水系分散體中之鐵酸鉀含量相同之0.006質量份。然而 ，硝酸鐵對鎢膜之硏磨速度爲30nm/分鐘，無法獲得充分 硏磨速度。另一方面，比較例5之化學機械硏磨用水系分 散體中之硝酸鐵含量由於爲6質量份，雖可獲得對鎢膜充 分之硏磨速度，但發生鐵份之殘留污染。 比較例6之化學機械硏磨用水系分散體由於未添加鐵 酸鉀或硝酸鐵，故無法獲得對鎢膜充分之硏磨速度。 比較例7之化學機械硏磨用水系分散體相當於未添加 -41 - 201139633 鐵酸鉀，僅添加一般氧化劑之過氧化氫之組成。該情況下 ，對鎢膜之硏磨速度爲30nm/分鐘，無法獲得充分之硏磨 速度。 又，本發明之硏磨用組成物可期待可有效用於硏磨包 含由 Cu、A卜 Ti、TiN、Ta、TaN、V、Mo、Ru、Zr、Μη 、Ni、Fe、Ag、Mg' Μη或Si組成之層，由該等之兀素 或化合物所組成之層之層合構造，或者實質不存在障壁金 屬之構造。 【圖式簡單說明】 圖1爲模式性顯示第一具體例之化學機械硏磨方法之 被處理體之剖面圖。 圖2爲模式性顯示第一具體例之第一硏磨步驟結束時 之被處理體之剖面圖。 圖3爲模式性顯示第一具體例之第二硏磨步驟結束時 之被處理體之剖面圖。 圖4爲模式性顯示第二具體例之化學機械硏磨方法之 被處理體之剖面圖》 圖5爲模式性顯示第二具體例之第一硏磨步驟結束時 之被處理體之剖面圖。 圖6爲模式性顯示第二具體例之第二硏磨步驟結束時 之被處理體之剖面圖。 圖7爲模式性顯示化學機械裝置之立體圖。 -42- 201139633 【主要元件符號說明】 1 0，1 1 :基體 1 2，1 3 :氧化砂膜 1 4 :配線用溝 1 5 :通孔 1 6，1 7 :障壁金屬膜 18 :銅膜 1 9 :鎢膜 42 :漿料供給噴嘴 44 :漿料（硏磨用組成物） 4 6 :硏磨布 4 8 ·旋轉台 5 0 :半導體基板 52 :載體頭 5 4 :供水噴嘴 5 6 :砂輪 100，200:被處理體 3 00 :化學機械硏磨裝置1.5. pH The pH of the chemical mechanical honing water dispersion of the present embodiment is not particularly limited, but is preferably 1 or more and 10 or less. The pH of the chemical mechanical honing aqueous dispersion of the present embodiment is preferably 1 or more and 6 or less. In particular, when the pH of the chemical mechanical honing water-based dispersion of the tungsten film is within the above range, the reactivity of the chemical mechanical honing water-based dispersion with the tungsten film becomes good - 21 - 201139633 It is preferred to display the most suitable oxidizing power. On the other hand, when the chemical mechanical honing aqueous dispersion of the present embodiment is stored, the pH is preferably 7 or more and 10 or less. When the pH of the chemical mechanical honing water-based dispersion is alkaline in the above range, the decomposition of ferrite ions can be suppressed, and the storage stability of the chemical mechanical honing water-based dispersion can be improved. 1.6. Uses One of the uses of the chemical mechanical honing water-based dispersion of the present embodiment is exemplified as a honing material for a copper film for honing a wiring for forming a semiconductor device. Specifically, it can be used as a honing material for forming a Cu damascene wiring. The step of forming a Cu damascene wiring by honing includes a first honing step mainly performing copper film removal and a second honing step of mainly removing a conductive barrier metal film formed on a lower portion of the copper film, but the chemical mechanical honing water is used The dispersion is effective if used in the first honing step. Further, the chemical mechanical honing water-based dispersion of the present embodiment can simultaneously achieve high honing speed and high flatness to the metal film, and can also be used in the second honing step. In addition, the first honing step is sometimes divided into a step of honing the deposited copper film at a high speed before the barrier metal film is exposed (the overall honing step), so that the residual copper film in the overall honing step is honed to the barrier metal film to be exposed. The honing step (fine honing step) is carried out. In the chemical mechanical honing water-based dispersion of the present embodiment, the copper film of the wiring material can be honed at a high speed while maintaining flatness, so that it can be effectively used in the entire honing step. The use of the chemical mechanical honing water-based dispersion of the present embodiment is exemplified as a honing material for a tungsten film which is a wire for forming a semiconductor device by honing -22-201139633. Specifically, it can be used in a chemical mechanical honing step for forming a tungsten plug for wire bonding. The object to be processed is exemplified as a target object including a tungsten film having an insulating film having a through hole and a barrier metal film provided on the insulating film. The chemical mechanical honing step of the object to be processed includes a first honing step mainly for removing the tungsten film, and a second honing step of mainly honing the tungsten film, the barrier metal film and the insulating film formed at the lower portion thereof, However, the chemical mechanical honing water-based dispersion of the present embodiment is effective for the first honing step from the viewpoint of the high honing speed of the tungsten film. Further, since the chemical mechanical honing water-based dispersion of the present embodiment has a non-selective honing property for the tungsten film and the yttrium oxide film, it can also be used in the second honing step. 2. Chemical mechanical honing method The chemical mechanical honing method of the present embodiment is characterized in that a semiconductor substrate (wafer or the like) containing a copper film or a tungsten film is honed by the chemical mechanical honing water-based dispersion of the present invention. Hereinafter, the first specific example and the second specific example of the chemical mechanical honing method of the present embodiment will be described in detail using the drawings. 2.1. First Specific Example 2.1.1. Object to be processed Fig. 1 is a cross-sectional view of a body to be treated which is not apparently applied to the chemical mechanical honing method of the first specific example. The object to be treated 100 is formed by undergoing the following steps (1) to (4). (1) First, as shown in (1), the substrate 10 is prepared. The substrate 10 -23-201139633 may be composed of, for example, a ruthenium substrate and a ruthenium oxide film formed thereon. Further, a functional device such as a transistor (not shown) may be formed on the base 10. Next, a ruthenium oxide film of an insulating film is formed on the substrate 1 by a CVD method or a thermal oxidation method. 1 2 » (2) Next, the yttrium oxide film 12 is patterned. Using the obtained pattern as a mask, a wiring trench 14 is formed on the yttrium oxide film 12 by a lithography method. (3) Next, the barrier metal film 16 is formed on the surface and the inner wall surface of the yttrium oxide film 12 by sputtering. The electrical contact between the copper film and the hafnium oxide film 12 is not good, but good electrical contact is achieved through the barrier metal film 16. The material of the barrier metal film 16 is exemplified by giant, molybdenum nitride, titanium, titanium nitride, and the like. (4) Next, the copper film 18 is formed by a CVD method. The copper forming the copper film 18 may be not only pure copper but also an alloy containing 95% by weight or more of copper-bismuth or copper-aluminum. 2 · 1.2 · Honing method 2.1.2.1. First honing step Fig. 2 is a cross-sectional view schematically showing the object to be processed at the end of the first honing step of the first specific example. As shown in Fig. 2, the first honing step is a step of honing the copper film 18 using the chemical mechanical honing water dispersion of the present invention until the barrier metal film 16 is exposed. According to this step, by using the chemical mechanical honing aqueous dispersion described above, the metal contamination of the treated body 1 can be reduced, and the high honing speed of the copper film 18 and the high flatness of the honed surface can be achieved. . -24- 201139633 2.1.2.2. Second honing step Fig. 3 is a cross-sectional view schematically showing the object to be processed at the end of the second honing step of the first specific example. As shown in Fig. 3, the second honing step is a step of honing the barrier metal film 16 and the copper film 18 using a chemical mechanical honing water dispersion until the yttrium oxide film 12 is exposed. Further, the chemical mechanical honing water-based dispersion of the present invention can also be used for the second honing step because it has both high honing speed and high flatness to the metal film. 2.2. Second Specific Example 2.2.1. Object to be processed Fig. 4 is a cross-sectional view schematically showing a body to be processed which is applied to the chemical mechanical honing method of the second specific example. The object to be processed 200 is formed by going through the following steps (1) to (4). (1) First, as shown in FIG. 4, the substrate 11 is prepared. The substrate 11 can be composed of, for example, a tantalum substrate and a tantalum oxide film formed thereon. Further, a functional device such as a transistor (not shown) may be formed on the substrate 11. Next, a ruthenium oxide film 13 of an insulating film is formed on the substrate 1 1 by a CVD method or a thermal oxidation method. (2) Next, the yttrium oxide film 13 is patterned. Using the obtained pattern as a mask, a through hole 15 is formed on the yttrium oxide film 13 by a lithography method. (3) Next, a barrier metal film 17 is formed on the surface and the inner wall surface of the yttrium oxide film 13 by sputtering. The electrical contact between the tungsten film and the hafnium oxide film 13 is not good, but good electrical contact is achieved through the barrier metal film 17. The material of the barrier metal film 17 is exemplified by molybdenum, molybdenum nitride, titanium, titanium nitride, or the like. -25- 201139633 (4) Next, the tungsten film 19 is formed by a CVD method. 2.2.2 Chemical mechanical honing method 2.2.2.1. First honing step Fig. 5 is a cross-sectional view schematically showing the object to be processed at the end of the first honing step of the second specific example. As shown in Fig. 5, the first honing step is a step of honing the tungsten film 19 until the barrier metal film 17 is exposed by using the above-described chemical mechanical honing water-based dispersion of the present invention. According to this step, by using the chemical mechanical honing water-based dispersion of the present invention, the metal contamination of the object to be treated 200 can be reduced, and at the same time, the high honing speed of the tungsten film 19 and the height of the honed surface can be achieved. Flatness. 2.2.2.2. Second honing step Fig. 6 is a cross-sectional view schematically showing the object to be processed at the end of the second honing step of the second specific example. As shown in Fig. 6, the second honing step is a step of honing the barrier metal film 17 and the tungsten film 19 until the yttrium oxide film 13 is exposed by using a chemical mechanical honing water dispersion. Further, the chemical mechanical honing aqueous dispersion of the present invention has a non-selective honing property to the tungsten film and the yttria film, and therefore can be used in the second honing step. The chemical mechanical honing aqueous dispersion of the present invention is used in the second honing step, whereby a highly versatile modified surface can be obtained. 2.3. Chemical Mechanical Honing Device The first honing step and the second honing step described above may use, for example, the honing device 300 shown in Figures 7-26-201139633. Fig. 7 is a perspective view schematically showing the honing device 3'. Each of the honing steps supplies the slurry (chemical mechanical honing water-based dispersion) 44 from the slurry supply nozzle 42 and rotates the rotating table 48 to which the honing cloth 46 is attached, while holding and holding the semiconductor substrate 50. Head 52 is performed. Further, in Fig. 7, the water supply nozzle 54 and the grinding wheel 56 are also shown in combination. The honing load of the carrier head 52 can be selected from the range of 0.7 to 70 psi, preferably 2.1 to 35 psi. Further, the number of revolutions of the rotary table 48 and the carrier head 52 can be appropriately selected within the range of 10 to 400 rpm, preferably 30 to 15 rpm. The flow rate of the slurry (honing composition) 44 supplied from the slurry supply nozzle 42 can be selected within the range of 10 to 1,000 mL/min, preferably 50 to 400 mL/min. Commercially available honing devices are listed, for example, as "EPO-112" and "EPO-222" manufactured by Ebara Seisakusho Co., Ltd.; manufactured by Lapmaster SFT, models "LGP-510" and "LGP-552"; manufactured by Applied Materials, Inc. Models "Mirra", "R ef 1 exi ο η", etc. 3. Chemical mechanical honing water-based dispersion preparation kit The chemical mechanical honing water-based dispersion of the present embodiment can be directly added to pure water by forming a compound of ferrite particles which forms ferrite ions and other additives. And prepared by mixing and stirring. The chemical mechanical honing aqueous dispersion thus obtained can be used as it is, or a chemical mechanical honing aqueous dispersion* containing a component (concentrated) at a high concentration can be prepared and diluted to a desired concentration at the time of use. Further, a plurality of liquids (-27-201139633, for example, 2 or 3 liquids) containing any of the above components may be prepared, and the mixture may be mixed when using the same. The storage stability can be improved by dividing into a plurality of liquids containing any of the above components. In this case, after mixing a plurality of liquid-modulated chemical mechanical honing water-based dispersions, they may be supplied to a chemical mechanical honing device, or a plurality of liquids may be individually supplied to the chemical mechanical honing device, and the pressure plate The upper chemical mechanical honing water dispersion is prepared. Hereinafter, a preferred embodiment of the chemical mechanical honing water-based dispersion preparation kit of the present invention will be described. A chemical mechanical honing water-based dispersion preparation kit according to an embodiment of the present invention is a kit for preparing the chemical mechanical honing water-based dispersion, which comprises ferrite ions (Fe042·) and water. The first composition is a second composition comprising honing particles and a dispersion medium. The first composition can be prepared by dissolving at least one selected from silicates such as potassium ferrite, barium ferrite, sodium ferrite, and ammonium citrate in water. The ferric acid ions contained in the first composition are particularly unstable under neutral to acidic conditions. Therefore, p Η of the first composition is preferably 7 or more and 10 or less, more preferably 8 or more and 10 or less. Further, since ferrite ions have a property of being decomposed by light, they are preferably stored in a container having a light-shielding property when the first composition is stored. Further, the first composition preferably does not contain other additives from the viewpoint of preventing the reaction of ferrite ions with other components or decomposition of ferric ions. The second composition can be prepared by adding honing particles to a dispersion medium. The second composition can be added with other additives without impairing the dispersion stability of the honing particles. According to the chemical mechanical honing water-based dispersion preparation kit, the chemically unstable ferrite ion (Fe042·) is stored separately from other components by -28-201139633, and the decomposition of ferric acid ions (Fe042_) can be suppressed. . The performance of the chemical mechanical honing aqueous dispersion can be maximized by mixing the first composition with the second composition just prior to use and preparing a chemical mechanical honing aqueous dispersion. Further, the chemical mechanical honing aqueous dispersion preparation kit of the present embodiment further comprises a third composition prepared by dissolving at least one selected from hydrogen peroxide, potassium persulfate and ammonium persulfate in water. Further, the third composition preferably does not contain other additives from the viewpoint of preventing the oxidizing agent from reacting with other components or decomposing the oxidizing agent. Further, the first composition and the third composition are preferably mixed as much as possible before the chemical mechanical honing, and are used in a short time after mixing. The time from the mixing to the chemical mechanical honing is preferably from 1 second to 7 days, more preferably from 1 second to 1 hour later. Further, when the old mixed liquid is mixed with a new mixed liquid, the quality is not good, so it is preferable to mix on the line or batch. 4. EXAMPLES Hereinafter, the present invention will be described by way of examples, but the present invention is not limited by the examples. 4.1. Preparation of chemical mechanical honing water dispersion 4.1.1. Preparation of colloidal cerium oxide aqueous dispersion Dilute water glass No. 3 (2% by mass of cerium oxide) with water to obtain cerium oxide concentration of 3.0 mass % diluted sodium citrate aqueous solution. The -29-201139633 diluted sodium citrate aqueous solution was passed through a hydrogen type cation exchange resin to remove the sodium ions, thereby obtaining an active citric acid aqueous solution of pH 3.1. Subsequently, a 1% by mass aqueous potassium hydroxide solution was added under stirring to adjust the pH to 7.2, followed by heating to boiling and hot ripening for 3 hours. To the resulting solution, a 1 〇 amount of an active aqueous solution adjusted to pH 7.2 in advance was added in a small amount to grow colloidal cerium oxide. Next, the dispersion liquid containing colloidal cerium oxide was concentrated under reduced pressure to obtain a cerium oxide aqueous dispersion having a cerium oxide concentration of 3 2.0% by mass and a pH of 9.8. The colloidal cerium oxide aqueous dispersion is again passed through the cation exchange resin layer, and after removing most of the sodium, a 1% by weight aqueous potassium hydroxide solution is added to obtain a cerium oxide particle concentration: 28.0%, and a colloidal body having a pH of 10.0. Aqueous yttrium oxide dispersion (a) ^ The average particle size calculated from the specific surface area measured by the BET method is 45 nm. Further, the measurement of the colloidal cerium oxide particles by the BET method is carried out by concentrating the cerium oxide particles, drying them, and recovering them. Further, the measurement of the specific surface area was carried out by using a flow type meter automatic measuring device (M i c r 〇 m e t r i c s F1 〇 w S 〇 r b 11 2 3 0 0) manufactured by Shimadzu Corporation. Further, the boundary between the heat aging time and the type and amount of the basic compound was controlled by the same method as described above to obtain a colloidal dioxide dispersion (b) having an average particle diameter of 80 nm calculated using the specific surface area of the BET method. 4.1.2. Chemical mechanical honing water-based dispersion modulation most of the time immediately to the water-soluble citric acid water-soluble two-hydrogen mass mass diameter for the area body two area addition measurement 矽水-30- 201139633 ion exchange water 50 parts by mass The colloidal cerium oxide aqueous dispersion (a) equivalent to 3 parts by mass, and the colloidal cerium oxide aqueous dispersion (b) converted to cerium oxide equivalent to 3 parts by mass, and potassium ferrite 0.0 06 Parts by mass and 0.1 parts by mass of maleic acid were poured into a polyethylene bottle and stirred for 15 minutes. At this time, the barium ferrite is prepared using the "Ferrator" of the ferric acid manufacturing machine manufactured by Ferrate Treatment Technologies. Finally, ion-exchanged water was added to a polyethylene bottle so that the total amount of all the components was 100 parts by mass, and then filtered through a filter having a pore size of 1 μm to obtain a chemical mechanical honing water-based dispersion Α. In addition, the potassium ferrite was changed to the component/addition amount shown in Table 1, and the type of the additive was changed to the component/addition amount shown in Table 1, and the chemical mechanical honing water-based dispersion A was prepared. The method also obtained chemical mechanical honing water dispersions B~X. 4.2. Evaluation of Chemical Mechanical Honing Water Dispersion Test 4.2.1. Evaluation Test of Copper Film 4 · 2 . 1 · 1 . Evaluation of Honing Speed of Copper Film Grinding of Porous Polyurethane The mat (manufactured by RODEL NITTA Co., Ltd., product number "IC1000") is attached to a honing device (manufactured by Applied Materials, Inc., "Mirra"), and is supplied to any of the honing compositions A to L, as described below. The substrate for honing speed measurement was subjected to honing treatment for 30 seconds under the following honing conditions, and the honing speed was calculated by the following method. -31 - 201139633 (a) Substrate for honing speed measurement • A copper film with a film thickness of 15,0 angstroms is placed on the ruthenium substrate to which the thermal oxide film is attached. (b) Honing conditions • Number of revolutions of the carrier: lOOrpm • Number of revolutions of the rotary table: l rpm • Bearing load: 3.5 psi • Supply rate of the honing composition: 200 mL/min for honing in this case The supply rate of the composition is obtained by dividing the total supply amount of all the supply liquids by the unit time. (c) Calculation method of honing speed Using a conductive film thickness measuring device (manufactured by KLA-Tencor Co., Ltd., "OMUNIMAP RS75"), the film thickness before and after the honing treatment was measured, and the film thickness and enthalpy reduced by honing were measured. The grinding time calculates the honing speed. The results are shown in Table 1. The honing speed of the copper film is preferably 50 nm/min or more under the above conditions. In this case, the evaluation column in Table 1 is referred to as "〇". Further, when the honing speed of the copper film is less than 50 nm/min, it cannot be used in the actual device, so it is indicated as "X" in the evaluation column in the table. 4.2.1.2. Evaluation of Wafer Flatness of the Drawing Type -32- 201139633 The chemical mechanical honing of the pattern wafer in which the groove of the wiring pattern is formed is known to cause local excessive honing. These are formed on the surface of the patterned wafer before the chemical mechanical honing, and the surface of the metal film is formed with irregularities reflecting the grooves of the wiring pattern, and the chemical mechanical honing is locally applied according to the pattern density. Pressure, which accelerates part of the honing speed. Therefore, the honing characteristics in the actual use state of the chemical mechanical honing water-based dispersion of the present embodiment are confirmed by honing the pattern wafer of the semiconductor substrate. For the wafers of the following drawings, the honing time is set to one minute, and the honing conditions are the same as the honing conditions of the above-mentioned "4.2.1.1. Evaluation of the honing speed of the copper film". The method evaluates the flatness and the presence or absence of defects. The results are shown in Table 1. (1) The substrate of the drawing type has a 400 nm PETEOS film. The 8 吋 wafer system is processed into a "SEMATECH 8 5 4" pattern to form a trench pattern of 400 nm deep, and 25 nm of Ti/TiN is laminated. A film, and a test substrate (manufactured by SEMATECH INTERNATIONAL Co., Ltd.) of a 600 nm copper film were laminated. (2) Evaluation of flatness The high-resolution Frofiler (manufactured by KLA-Tencor Co., model "HRP240ETCH") was used to measure the copper wiring width (line, for the honed surface of the wafer after the honing process step). L)/Insulation film width (interval, S) is a recessed amount (nm) in the copper wiring portion of 100 μm / 100 μm, respectively -33 - 201139633. The amount of depression is judged to be better at 〇~l 〇〇nm, more preferably 〇~90 nm, and most preferably 0 to 60 nm. When the amount of depression is 〇~l〇〇nm, the evaluation column in Table 1 is marked as "〇". Further, when the amount of the depression is l〇〇nm or more, the actual device cannot be applied, and the evaluation column in the table is referred to as "X". 4.2.1.3. Evaluation of residual iron content of copper film The (a) honing speed measurement substrate and (b) honing conditions are also used for honing in the above "4·2·1.1. Evaluation of honing speed of copper film": The amount of residual iron in the copper film was evaluated as follows. The amount of residual iron was analyzed by surface analysis of the honed surface using a total reflection fluorescent X-ray analyzer ("DIRFKU", "TXRF V300"). Specifically, X-rays of 8KeV are irradiated from the center of the 8 吋 wafer at the center of the honing, and the type of the estimated wavelength of the fluorescent X-rays generated by the portion and the concentration and amount of the intensity are estimated. Since the iron-based compound is contained as an additive, the above-mentioned detected concentration is obtained from the intensity of the specifically generated fluorescent X-ray of 0·3 nm in the presence of iron. The results are shown in Table 1. When the amount of residual iron is 0.2x1 〇1 (> atom/cm2 or less, the performance of the device is better. This case is marked as "〇" in the evaluation column of the table. Also, when it exceeds 0.20xl01Q atom/cm2, 'no Applicable to the actual device, marked "X" in the evaluation column of the table. -34- 201139633 1Comparative Example 3 1 -J q rS s 1 1 1 |Maleic acid I 5 1 1 CM X ο 0 I 0.2 or less| 〇Comparative Example 2 ο ή s 1 1 1 | Ferric acid iron nitrate 2 S 〇S Ο 10.2 X Comparative Example 1 Ο co s 1 1 丨Maleic acid 5 Iron nitrate 0.006 SX ΙΟ Ο I 0.2 or less Example 9 — Ο CO 5 potassium ferrite 0.006 2.0x10"* Maleic acid ammonium persulfate 5 S Ο ΙΟ ο 0.2 or less 〇 Example 8 I ο s ferric acid feed 0.006 2.0 X 10"5 Γΐ 酸 acid 5 hydrogen peroxide 5 eg 〇Ο Β ο | 0.2 or less 〇 Example 7 〇ο CO s potassium ferrite 0.006 2.0X10^ "Maleic acid 5 glycine 5 σ Ο ο ο Γ〇 · 2 below 〇 Example 6 Ll S s ferrite 0.006 2.0 Χ10'5 maleic acid^ 5 propylene, 1 5 _ s Ο S ο | 0.2 or less | 〇 Example 5 Ui S s potassium ferrite CD 2.0 Χ 10 " 2 丨 maleic acid 1 5 1 1 300 ο S ο «N J 〇 Example 4 Ο 5 si ferrite clock r> 1.0 χίο·2 maleic acid 5 Ί 1 3 § ο S ο 〇 Example 3 ϋ qo 丨 ferrite clock CD ο 2.〇x 10~3 maleic acid 5 1 1 OI c\i 120 ο S 〇0·2 or less 〇 Example 2 CD p en s Ferric acid clock 0.0006 2.0 x 10"6 丨Maleic acid] 5 1 1 s ο S ο 0.2 or less Example 1 <S s potassium ferrocyanate 0.006 2.0 x 1〇*5 Ρ 酸 5 1 1 s ο W ο 0.2 or less 〇 chemical mechanical honing water dispersion type c4 i ffiiH / -V maple 酗 11 w awake Η幽如骏 W content (halo part) gjg cat smell _ 爷1 153⁄4 si Zhao hun shan tree species content (parts by mass) type. . _1 content (parts by mass) chemical mechanical honing water dispersion PH honing speed (nm/min) Judging the depression (nm) Determining the iron concentration (Χίο"1 atom/cm2) Determining the eutectic ferrite ion other additive I Honing speed evaluation Flatness evaluation Residual iron evaluation-35- 201139633 4·2.2·Tungsten Film evaluation test 4·2·2·1·Torque film evaluation of honing speed. Polyurethane honing pad made by RODEL ΝΙΤΤΑ The model "IC10 00" is installed in a chemical mechanical honing device (manufactured by Applied Materials, Inc., "Mirra"), and is supplied to the chemical mechanical honing water dispersion Μ~X. The substrate for grinding speed measurement was subjected to honing treatment for 30 seconds under the following honing conditions, and the honing speed was calculated by the following method. (a) Substrate for honing speed measurement. • A tungsten film with a thickness of 8,0 Å is provided on a ruthenium substrate to which a thermal oxide film is attached. (b) Honing conditions • Number of revolutions of the carrier: 80 rpm • Number of revolutions of the rotary table: 80 rpm • Bearing load: 3.5 psi • Supply rate of chemical mechanical honing water dispersion: 120 mL/min Chemical mechanical 该 in this case The supply rate of the water-based dispersion is the total amount of supply of all the feed liquid divided by the amount per unit time. (c) Calculation method of honing speed Using a conductive film thickness measuring device (manufactured by KLA-Tencor Co., Ltd., -36-201139633 "OMUNIMAP RS75") 'Measurement of film thickness before and after honing treatment' film reduced by honing Thickness and honing time are used to calculate the honing speed. Results The combinations are listed in Table 2. The honing speed of the tungsten film is preferably 40 nm/min or more under the above conditions, and in this case, the evaluation column in Table 1 is referred to as "〇". Further, it is more preferably 100 nm/min or more. In this case, the evaluation column in Table 1 is referred to as "◎". In addition, when the honing speed of the tungsten film is less than 40 nm/min, 'the actual device cannot be used. Therefore, in the evaluation column of the table, it is marked as "X 4.2.2.2. The wafer flatness evaluation of the drawing type is as follows. In the wafer of the drawing type, the honing treatment is performed in the same manner as the honing condition in the "4 · 2 · 2 · 1 · tungsten film honing speed evaluation" except that the honing time is 1 minute. The method evaluates the flatness and the presence or absence of defects. The results are collectively shown in Table 2. (1) The substrate of the drawing type has a PETEOS film of 800 nm. The 8 吋 wafer system is processed into a "SEMATECH 8 54" pattern to form a trench pattern of 400 nm deep, and then laminated 25 nm of Ti/TiN. A film for test, and a test substrate (manufactured by SEMATECH INTERNATIONAL Co., Ltd.) of a 600 nm tungsten film was laminated. (2) Evaluation of flatness The high resolution Frofiler (manufactured by KLA-Tencor, Model No. -37-201139633 "HRP240ETCH") was used to determine the honed surface of the wafer after the honing process. The tungsten wiring width (line, L) / insulating film width (interval, S) is the amount of recess (nm) in the tin wiring portion of 100 μm / 1 0 0 μm, respectively. When the amount of the depression is 〇~1 〇〇nm, it is judged to be better 'it is preferably 〇~90 nm, and it is preferably 〇~60 nm. When the amount of depression is 〇~1 〇〇nm, the evaluation column in Table 1 is marked as "〇". In addition, when the flatness is 1 〇〇 nm or more, the actual device cannot be applied, and the evaluation column in the table is marked as "X". 4.2.3. Evaluation of Residual Iron Amount of Tungsten Membrane The (a) honing speed measurement substrate and (b) honing conditions are also used in the above-mentioned "4.2.2.1. Evaluation of honing speed of tungsten film", and the above "4.2.1.3 Evaluation of Residual Iron Amount of Copper Film" The amount of residual iron in the tungsten film was also evaluated. -38- 201139633 [cs«] Comparative Example 7 X 〇r> s 1 1 Hydrogen peroxide S | Maleic acid | 〇· ί 1 s X ο 〇1 0.2 or less | 〇 Comparative Example 6 1 s 1 1 1 1 b Acids | d 1 o X ο 〇 0.2 or less 1 〇丨 Comparative Example 5 | > S s 1 1 1 | Maleic acid 5 Iron nitrate S os ◎ 〇CD 5 X Comparative Example 4 s 1 1 1 f Maleic acid Ί 5 I ferric nitrate <0 S 〇s X ο 〇 0.2 or less | 0 Example 17 Η qs 2.0X10^ . Persulfate sulphide | maleic acid | 5 \ 1 g Ο S 〇| 〇.2 the following | Example 16 CO S s CO oo 2.0 ΧΙΟ*5 Hydrogen peroxide 〇Maleic acid d “Gan 5 os ◎ isoindole | 0.2 or less I 〇 Example 15 tx S s (O i 2*0 ΧΙΟ-5 hydrogen peroxide 〇 | Maleic acid | 5 丨 Malonic acid I 〇 8 r > ◎ S 〇 | 0.2 or less | 〇 Example 14 Ο 3 s < 9 2.0 κ 10'2 Hydrogen peroxide 5 P maleic acid | ο 1 1 so ◎ tA σ > 〇 P4 〇 Example 13 a S n Ι.ΟκΙΟ"2 1 Hydrogen peroxide I 5 1 Maleic acid 1 5 1 1 B CO ◎ S 〇〇 Example 12 ο S so 2.0X10'* 1 Hydrogen oxide 1 〇 maleic acid 5 1 1 CM g Φ ◎ S 〇 1 0.2 or less i 〇 Example 11 ζ S s [0.0QQ5 2.0 ΧΙΟ** Hydrogen Peroxide 〇 1 Maleic Acid ^ 5 1 1 o Ο ο 〇 0.2 or less _1 〇 Example 10 S sgp ζ.〇χ ΙΟ"6 Hydrogen peroxide 1 d | Maleic acid | 5 1 1 d 8 ◎ 〇〇·2 or less 〇Chemical mechanical honing water dispersion type N (Q litigation a 1 Bu rac 4 -〇|@ιΜ Content (mass) ϋ 味1 Observation mm (4) | Type Content (parts by mass) Type content (parts by mass) 嗳W content (parts by mass) 1 Xa Honing speed (nm/min) 1 Judgment 1 Depression (nm) Determination of iron concentration 〇1〇IQ atom/era2) Honing iron Potassium acid specific oxidant Other additive-1 Evaluation of honing speed-1 Evaluation of flatness evaluation of residual iron -39-201139633 4.3. Evaluation results 4.3.1 Evaluation results of copper film The chemical mechanical honing water system of Examples 1 to 5 was used. In the case of the dispersion, a high honing speed is achieved in the honing of the copper film, and at the same time, the honed surface having a sufficiently small residual iron content can be obtained. Further, from the results of Examples 1 to 5, it is clear that as the ferric acid ions become larger, the honing speed to the copper film also becomes larger. The chemical mechanical honing aqueous dispersions of Examples 6 to 7 corresponded to the composition in which the malonic acid and the glycine acid were further added in Example 1. When the chemical mechanical honing aqueous dispersion of Examples 6 to 7 was used, almost the same performance as that of Example 1 was obtained. The chemical mechanical honing aqueous dispersions of Examples 8 to 9 corresponded to the composition in which the hydrogen peroxide and ammonium persulfate were further added as an oxidizing agent in Example 1, and the chemical mechanical honing aqueous dispersions of Examples 8 to 9 were used. At this time, the honing speed of the copper film was larger than that of Example 1. The chemical mechanical honing water-based dispersion of Comparative Examples 1 to 2 corresponds to the composition of adding ferric nitrate instead of potassium ferrite. The chemical mechanical honing water of Comparative Example 1 The iron nitrate content in the dispersion was 0.006 parts by mass equivalent to the potassium ferrite content in the aqueous dispersion for chemical mechanical honing of Example 1. However, the honing speed of the iron nitrate to the copper film was 20 nm/min, and sufficient honing speed could not be obtained. On the other hand, in the chemical mechanical honing water-based dispersion of Comparative Example 2, the iron nitrate content was 6 parts by mass, and although sufficient honing speed was obtained for the copper film, residual contamination of iron was caused. In the chemical mechanical honing water-based dispersion of Comparative Example 3, since potassium ferrite or iron nitrate was not added, sufficient honing speed to the copper film could not be obtained. -40- 201139633 4.3.2. Evaluation results of tungsten film When using the chemical mechanical honing water dispersion of Example 1 〇~1 4, a high honing speed is achieved in the honing of the tungsten film, and at the same time, The residual iron is sufficiently small to be polished. Further, from the results of Examples 10 to 14, it is clear that as the ferric acid ions become larger, the honing speed to the tungsten film also becomes larger. The chemical mechanical honing aqueous dispersions of Examples 15 to 16 corresponded to the composition in which the malonic acid and the glycine were further added in Example 10. When the chemical-based honing aqueous dispersion of Examples 15 to 16 was used, almost the same performance as in Example 1 was obtained. The chemical mechanical honing aqueous dispersion of Example 1 corresponds to the addition of ammonium persulfate as the oxidizing agent. As a result of the embodiment, it is presumed that the increase in the honing speed of the tungsten film is small as compared with the case where an appropriate amount of hydrogen peroxide is added, but it is known that the use of an actual device is possible. The chemical mechanical honing water dispersion of Comparative Examples 4 to 5 corresponds to the composition of adding ferric nitrate instead of potassium ferrite. The chemical mechanical honing water of Comparative Example 4 The iron nitrate content in the dispersion was 0.006 parts by mass which was the same as the potassium ferrite content in the chemical mechanical honing water dispersion of Example 10. However, the honing speed of the iron nitrate to the tungsten film was 30 nm/min, and sufficient honing speed could not be obtained. On the other hand, in the chemical mechanical honing water dispersion of Comparative Example 5, the iron nitrate content in the dispersion was 6 parts by mass, and although the honing speed for the tungsten film was sufficiently obtained, residual contamination of the iron occurred. In the chemical mechanical honing water-based dispersion of Comparative Example 6, since no potassium ferrite or ferric nitrate was added, sufficient honing speed for the tungsten film could not be obtained. The chemical mechanical honing water-based dispersion of Comparative Example 7 corresponds to the composition of potassium hydroxide which is not added with -41 - 201139633, and only hydrogen peroxide of a general oxidizing agent is added. In this case, the honing speed of the tungsten film was 30 nm/min, and sufficient honing speed could not be obtained. Further, the composition for honing of the present invention can be expected to be effectively used for honing including Cu, A, Ti, TiN, Ta, TaN, V, Mo, Ru, Zr, Μη, Ni, Fe, Ag, Mg'. A layer composed of Μη or Si, a laminated structure of a layer composed of such a halogen or a compound, or a structure in which a barrier metal is substantially absent. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing a target body of a chemical mechanical honing method according to a first specific example. Fig. 2 is a cross-sectional view schematically showing the object to be processed at the end of the first honing step of the first specific example. Fig. 3 is a cross-sectional view schematically showing the object to be processed at the end of the second honing step of the first specific example. Fig. 4 is a cross-sectional view of the object to be processed which schematically shows the chemical mechanical honing method of the second specific example. Fig. 5 is a cross-sectional view schematically showing the object to be processed at the end of the first honing step of the second specific example. Fig. 6 is a cross-sectional view schematically showing the object to be processed at the end of the second honing step of the second specific example. Figure 7 is a perspective view of a schematic display chemical mechanical device. -42- 201139633 [Explanation of main component symbols] 1 0,1 1 : Substrate 1 2,1 3 : Oxide film 1 4 : Wiring groove 1 5 : Through hole 1 6,1 7 : Barrier metal film 18 : Copper film 1 9 : tungsten film 42 : slurry supply nozzle 44 : slurry (combustion composition) 4 6 : honing cloth 4 8 · rotary table 5 0 : semiconductor substrate 52 : carrier head 5 4 : water supply nozzle 5 6 : Grinding wheel 100, 200: treated body 3 00: chemical mechanical honing device

Claims (1)

201139633 七、申請專利範圍： 1. 一種化學機械硏磨用水系分散體，其特= 硏磨粒、鐵酸離子（Fe042·)及分散介質 2. 如申請專利範圍第1項之化學機械硏磨 體，其中前述鐵酸離子（Fe042·)之濃度爲1 上 10_2mol/L 以下。 3 .如申請專利範圍第1項之化學機械硏磨 體，其中前述硏磨粒爲膠體二氧化矽。 4 .如申請專利範圍第1項之化學機械硏磨 體，其進一步含有由過氧化氫、過硫酸鉀及過 出之至少一種。 5. 如申請專利範圍第1至4項中任一項之 磨用水系分散體，其係用於含有銅膜或鎢膜之 之硏磨。 6. 如申請專利範圍第1項之化學機械硏磨 體，其係混合硏磨粒、鐵酸鹽及分散介質而製 7. —種化學機械硏磨用水系分散體調製用 用以調製如申請專利範圍第1項之化學機械硏 散體用之套組，其包含= 含有鐵酸離子及水之第一組成物’ 及含有硏磨粒及分散介質之第二組成物。 8 .如申請專利範圍第7項之化學機械硏磨 體調製用套組，其進一步包含：含有由過氧化 鉀及過硫酸銨所選出之至少一種以及水之第三 徵爲含有 〇 用水系分散 〇-6mo 1/L 以 用水系分散 用水系分散 硫酸銨所選 化學機械硏 半導體基板 用水系分散 作。 套組’其係 磨用水系分 用水系分散 氫、過硫酸 組成物。 -44- 201139633 9. 一種化學機械硏磨方法，其係使用如申請專利範圍 第1項之化學機械硏磨用水系分散體硏磨含有銅膜或鎢膜 之半導體基板。201139633 VII. Patent application scope: 1. A chemical mechanical honing water dispersion, special = honing grain, ferric acid ion (Fe042·) and dispersion medium 2. Chemical mechanical honing as in the first patent application scope The body wherein the concentration of the ferric ion (Fe042·) is 1 or more and 10 2 mol/L or less. 3. The chemical mechanical honing body of claim 1, wherein the honing granule is colloidal cerium oxide. 4. The chemical mechanical honing body according to claim 1, further comprising at least one of hydrogen peroxide, potassium persulfate and excess. 5. The water-based dispersion according to any one of claims 1 to 4, which is used for honing containing a copper film or a tungsten film. 6. For the chemical mechanical honing body of the first application of the patent scope, which is prepared by mixing honing granules, ferrite and dispersing medium. 7. Chemical mechanical honing water dispersion preparation for modulation The kit for chemical mechanical dispersal of the first aspect of the patent, comprising: a first composition comprising ferric acid ions and water and a second composition comprising honing particles and a dispersion medium. 8. The kit for modulating a chemical mechanical honing body according to claim 7, further comprising: at least one selected from potassium peroxide and ammonium persulfate, and the third sign of water is dispersed in water containing hydrazine 〇-6mo 1/L The chemical mechanical 硏 semiconductor substrate selected by dispersing ammonium sulfate in water-based dispersion water is dispersed in water. The set of 'grinding water' is divided into water and hydrogen persulfate. -44- 201139633 9. A chemical mechanical honing method for honing a semiconductor substrate containing a copper film or a tungsten film using a chemical mechanical honing water-based dispersion according to claim 1.
TW100102875A 2010-01-27 2011-01-26 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using same, and kit for preparing aqueous dispersion for chemical mechanical polishing TW201139633A (en)

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