JP5906254B2 - ジルコニア粒子を含む研磨スラリーおよびその研磨スラリーを使用する方法 - Google Patents
ジルコニア粒子を含む研磨スラリーおよびその研磨スラリーを使用する方法 Download PDFInfo
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- JP5906254B2 JP5906254B2 JP2013544886A JP2013544886A JP5906254B2 JP 5906254 B2 JP5906254 B2 JP 5906254B2 JP 2013544886 A JP2013544886 A JP 2013544886A JP 2013544886 A JP2013544886 A JP 2013544886A JP 5906254 B2 JP5906254 B2 JP 5906254B2
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- polishing
- zirconia particles
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- zirconia
- Prior art date
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title claims description 364
- 239000002245 particle Substances 0.000 title claims description 264
- 238000005498 polishing Methods 0.000 title claims description 197
- 239000002002 slurry Substances 0.000 title claims description 139
- 238000000034 method Methods 0.000 title claims description 26
- 239000000463 material Substances 0.000 claims description 31
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 24
- 239000011148 porous material Substances 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 60
- 239000000654 additive Substances 0.000 description 31
- 239000013078 crystal Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 19
- 230000000996 additive effect Effects 0.000 description 17
- 239000002585 base Substances 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000011163 secondary particle Substances 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 150000003754 zirconium Chemical class 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000003139 biocide Substances 0.000 description 4
- -1 copper Chemical class 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 230000003301 hydrolyzing effect Effects 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000006179 pH buffering agent Substances 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000011121 sodium hydroxide Nutrition 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052795 boron group element Inorganic materials 0.000 description 3
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 229910021472 group 8 element Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CMOAHYOGLLEOGO-UHFFFAOYSA-N oxozirconium;dihydrochloride Chemical compound Cl.Cl.[Zr]=O CMOAHYOGLLEOGO-UHFFFAOYSA-N 0.000 description 3
- 229910052696 pnictogen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- ZXAUZSQITFJWPS-UHFFFAOYSA-J zirconium(4+);disulfate Chemical compound [Zr+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZXAUZSQITFJWPS-UHFFFAOYSA-J 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000003115 biocidal effect Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- QRTRRDMHGTZPBF-UHFFFAOYSA-L oxygen(2-);zirconium(4+);sulfate Chemical compound [O-2].[Zr+4].[O-]S([O-])(=O)=O QRTRRDMHGTZPBF-UHFFFAOYSA-L 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 1
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- 150000003746 yttrium Chemical class 0.000 description 1
- 238000000733 zeta-potential measurement Methods 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2006/10—Solid density
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2006/12—Surface area
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2006/16—Pore diameter
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
実施例1:130nmのジルコニア
硫酸ナトリウムを用いて500gのオキシ塩化ジルコニウム、ZrOCl2・8H2Oを処理して、塩基性硫酸ジルコニウム(ZBS)を形成させた。次いで、カセイソーダを用いてその塩基性硫酸ジルコニウムを滴定して、Zr(OH)4を沈降させた。そのZr(OH)4を乾燥させ、空気中1050℃で4時間かけて焼成して、単斜晶系酸化ジルコニウム結晶の凝結体を形成させた。その酸化ジルコニウム結晶の凝結体を、アトリションミル中でアトリションミル媒体としてイットリア安定化ジルコニアを使用して解凝結させた。そのようにして製造された単斜晶系ジルコニア粉体は、50nm〜110nmの間の一次粒径を有していると評価された。その二次粒径は130nmであった。それらの粒子は、5.58g/cm3の密度、23m2/gの比表面積、および24.1nmの平均細孔径を有していた。
500gのオキシ塩化ジルコニウム(ZrOCl2・8H2O)を、空気中1000℃で4時間かけて焼成して、凝結した単斜晶系酸化ジルコニウム結晶体を製造した。その酸化ジルコニウム結晶の凝結体を、アトリションミル中でアトリションミル媒体としてイットリア安定化ジルコニアを使用して解凝結させ、ジルコニア粉体を製造した。その一次粒径は、70〜120nmの間であると評価された。その二次粒径は180nmであった。そのようにして製造された物質は、5.72g/cm3の密度、14m2/gの比表面積、および25.3nmの平均細孔径を有していた。
電気アーク炉中2800℃でジルコンサンドを解離させて、溶融ジルコニア凝結粉体を形成させた。その溶融結晶を、アトリションミル中でイットリア安定化ジルコニア媒体を用いてサイズ減縮させて、0.39ミクロン〜3.4ミクロンの範囲の二次粒径を有するジルコニア粉体を製造した。たとえば、390nm、550nm、770nm、820nm、1200nm、および3400nmの二次粒径を有する単斜晶系ジルコニア粉体が得られた。その390nmの粉体は、18.4nmの平均細孔径を有していた。820nmの粉体は、5.70g/cm3の密度、6.5m2/gの比表面積、および13.9nmの平均細孔径を有していた。1200nmおよび3400nmの粉体は、18.7nmの平均細孔径を有していた。
実施例1と同様にして、500gのオキシ塩化ジルコニウム(ZrOCl2・8H2O)を処理してZBSを形成させた。そのZBS溶液に対してイットリウム塩を、最終のジルコニア重量を基準にして3,0モルパーセントが得られる量で添加した。その溶液を沈降させて、十分に分散したイットリウムを含む水和ジルコニウムZr(OH)4を形成させた。その水和物を乾燥させ、空気中1300℃で4時間かけて焼成して、ドープされたジルコニア結晶の凝結体を形成させた。正方晶系のイットリウムドープした酸化ジルコニウム結晶の凝結体をアトリションミルの中で解凝結させて、327nmの二次粒径を有する粒子を製造した。
実施例で使用した目標要素は、200mmのシリコンウェーハを加熱酸化させることにより調製した。その加熱酸化物を、直径22インチの定盤を有するWestech IPEC 372(商標)ブランドのCMP研磨機を使用して研磨した。研磨パッドは、Dow Electronic Materialsから入手可能なIC−1000A2(商標)ブランドの研磨パッドであった。研磨は次の条件で実施した:定盤回転速度;45rpm、基板キャリア回転速度;43rpm、下向き圧力;28kPa(4.0psi)、背面圧力;0.7kPa(1.0psi)、スラリー流速;150mL/分。その研磨スラリーは酸化物研磨スラリーであったが、それには、水、約1重量%の下記の特定の実施例に記述するようなサイズを有するジルコニア粒子、ならびに、特定のpHとすることが必要ならば、酸もしくは塩基のみが含まれていた。その酸はHNO3であり、そのアルカリはKOHであった。その研磨スラリーには、それら以外の成分は含まれていなかった。除去速度は、研磨前後の酸化物の厚みを測定することにより計算した。酸化物の厚みは、Filmetrics,Inc.から入手可能なF20(商標)ブランドの薄膜分析計を使用して測定した。表面測定は、Zygo New View 100ブランドの干渉式プロフィロメータを使用し、原子間力顕微鏡によって実施した。表面外観は、光学顕微鏡を使用するかまたは使用せずに、目視によって確かめた。
実施例5および6は、異なった粒径のジルコニア粒子で、異なったpHレベルの酸化物研磨スラリーにおける、研磨特性を示すためのものである。2組のスラリーを使用して、ウェーハから成長させた加熱酸化物を研磨した。それぞれの組には、10nm、50nm、130nm、180nm、および820nmの粒径が含まれていた。以下に示すのは、使用したジルコニア粒子の属性に関するデータである。
実施例7は、約1重量%のYドープされたZrO2(約3モル%のY)粒子およびセリア粒子を含む酸化物研磨スラリーについての研磨特性を示す。YドープされたZrO2粒子は、正方晶系の結晶形を有している。#1のCeO2サンプルは、Cabot Microelectronics Corporation製のD6720(商標)ブランドの酸化物研磨スラリーに相当し、#2のCeO2研磨スラリーは、Saint−Gobain Plastics & Ceramics,Inc.製の化学的に沈降させたセリアから調製した。#1のCeO2サンプルについてのD10およびD90値は入手できなかった。
金属研磨:銅およびタンタル
CMP研磨の機械および設定は、先に記述した酸化物研磨の場合と同じであるが、ただし下向き圧力は2.0psiに設定した。除去のための目標基板物質は、Cuおよびタンタルであった。
Claims (13)
- 研磨スラリーであって、
少なくとも110nmから350nm以下までの範囲の平均粒径、少なくとも11m2/gの比表面積、少なくとも5.5g/cm3の密度および少なくとも6.3のpHの等電点を有するジルコニア粒子を含み、前記等電点は、溶液全量に対して、前記ジルコニア粒子を0.01重量%含む水溶液中で測定されたものであり、
前記研磨スラリーが、少なくとも0.2重量%から20重量%以下までのジルコニア粒子を含み、かつ前記ジルコニア粒子が、単斜晶系ZrO2、正方晶系ZrO2、立方晶系ZrO2粒子、またはそれらの組合せを含む、
研磨スラリー。 - 9.5〜11.6の間のpH範囲で安定なゼータ電位を有する、請求項1に記載の研磨スラリー。
- 目標要素を研磨する方法であって、
機能素子および前記機能素子を覆う層を含むワークピースを有する目標要素を備える工程;および
ジルコニア粒子を含む研磨スラリーを使用して前記層を研磨する工程、を含み、
前記ジルコニア粒子は、単斜晶系ZrO2、正方晶系ZrO2、または立方晶系ZrO2粒子を含み、
前記ジルコニア粒子は、少なくとも80nmから350nm以下までの範囲の平均粒径、少なくとも5.5g/cm3の密度、少なくとも11m2/gの比表面積、少なくとも6.3のpHの等電点、および研磨のために前記研磨スラリーを適用される材料の表面において化学的活性または電気的活性を有する、
方法。 - 酸性条件下における酸化物研磨速度が、塩基性条件下よりも1.1〜1.9倍大きい、請求項3に記載の方法。
- 32より大きい、Cu対Taの研磨選択性を有している、請求項3または4に記載の方法。
- 前記ジルコニア粒子が、正方晶系ZrO2および/または立方晶系ZrO2粒子であり、Ce、Y、またはCaを用いてドープされている請求項1に記載の研磨スラリー。
- セリア粒子をさらに含む、請求項1に記載の研磨スラリー。
- 前記ジルコニア粒子の密度が5.8g/cm3以下である請求項1に記載の研磨スラリー。
- 前記ジルコニア粒子の比表面積が11m2/g〜25m2/gである請求項1に記載の研磨スラリー。
- 前記ジルコニア粒子は、15nm〜26nmの平均細孔径を有する請求項1に記載の研磨スラリー。
- 前記ジルコニア粒子は、7.0超のpHの等電点を有する請求項10に記載の研磨スラリー。
- 前記ジルコニア粒子の比表面積が11m2/g〜25m2/gである請求項3に記載の方法。
- 前記ジルコニア粒子が、正方晶系ZrO2および/または立方晶系ZrO2粒子であり、Ce、Y、またはCaを用いてドープされている請求項3に記載の方法。
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Publication number | Publication date |
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JP2016052988A (ja) | 2016-04-14 |
CN103328598B (zh) | 2015-03-11 |
TWI573863B (zh) | 2017-03-11 |
KR20130108433A (ko) | 2013-10-02 |
US20120171936A1 (en) | 2012-07-05 |
EP2658943A4 (en) | 2015-09-30 |
US9410063B2 (en) | 2016-08-09 |
KR101546695B1 (ko) | 2015-08-25 |
US9120200B2 (en) | 2015-09-01 |
EP2658943A2 (en) | 2013-11-06 |
CN103328598A (zh) | 2013-09-25 |
EP2658943B1 (en) | 2021-03-03 |
JP2014504324A (ja) | 2014-02-20 |
WO2012092361A2 (en) | 2012-07-05 |
WO2012092361A3 (en) | 2013-03-28 |
US20150315441A1 (en) | 2015-11-05 |
TW201226547A (en) | 2012-07-01 |
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