JP5518869B2 - 化学的機械研磨用組成物、その製造方法、及びその使用方法 - Google Patents
化学的機械研磨用組成物、その製造方法、及びその使用方法 Download PDFInfo
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- JP5518869B2 JP5518869B2 JP2011526902A JP2011526902A JP5518869B2 JP 5518869 B2 JP5518869 B2 JP 5518869B2 JP 2011526902 A JP2011526902 A JP 2011526902A JP 2011526902 A JP2011526902 A JP 2011526902A JP 5518869 B2 JP5518869 B2 JP 5518869B2
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- cmp slurry
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- silicon dioxide
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- 239000000203 mixture Substances 0.000 title claims description 65
- 238000005498 polishing Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 31
- 239000000126 substance Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 239000002002 slurry Substances 0.000 claims description 63
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- YQUVCSBJEUQKSH-UHFFFAOYSA-N protochatechuic acid Natural products OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 claims description 20
- WKOLLVMJNQIZCI-UHFFFAOYSA-N vanillic acid Chemical compound COC1=CC(C(O)=O)=CC=C1O WKOLLVMJNQIZCI-UHFFFAOYSA-N 0.000 claims description 20
- TUUBOHWZSQXCSW-UHFFFAOYSA-N vanillic acid Natural products COC1=CC(O)=CC(C(O)=O)=C1 TUUBOHWZSQXCSW-UHFFFAOYSA-N 0.000 claims description 20
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 15
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000003139 biocide Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 2
- 238000007790 scraping Methods 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000003115 biocidal effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- LBKFGYZQBSGRHY-UHFFFAOYSA-N 3-hydroxy-4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1O LBKFGYZQBSGRHY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Description
(1)研磨パッドと前記対象物の間に、研磨粒子と一般式Iで表される化合物とを含む水性CMPスラリー組成物を供給する段階、及び
(2)前記研磨パッド及び前記対象物を、その間に配置された前記CMPスラリー組成物とともに押圧しつつ、前記研磨パッドと前記対象物を互いに相対的に動かし、前記対象物表面から二酸化ケイ素を除去する段階を含む。本発明の好適な実施形態において、前記CMPスラリー組成物は、さらに、窒化ケイ素除去速度を抑制する添加剤(例えば、プロリン)を含む。
Claims (13)
- 1.0重量%〜8.0重量%の、平均径20nm〜1000nmのセリア研磨粒子と、
0.01重量%〜水への溶解限度量のバニリン酸と、
水性CMPスラリー組成物のpHを2.8〜6に調整するのに十分な量の硝酸と、
0.6重量%から4.0重量%のプロリンと、
任意に 、イソプロピルアルコール及び殺生物剤からなる群から選択される1種以上から構成される水性CMPスラリー組成物。 - 請求項1の水性CMPスラリー組成物であり、前記組成物が、イソプロピルアルコールを含有することを特徴とする組成物。
- 請求項1の水性CMPスラリー組成物であり、前記のCMPスラリー組成物のpHが、3.0〜4.5であることを特徴とする組成物。
- 請求項1の水性CMPスラリー組成物であり、前記セリア研磨粒子の最大径が、10,000nm未満であることを特徴とする組成物。
- 請求項4の水性CMPスラリー組成物であり、前記セリア研磨粒子の平均径が、100nm〜150nmであることを特徴とする組成物。
- 化学的機械研磨によって対象物表面から二酸化ケイ素を除去する方法であり、該方法は、
(i)研磨パッドと前記対象物表面との間に、
(a)1.0重量%〜8.0重量%の、平均径20nm〜1000nmのセリア研磨粒子と、
(b)0.01重量%〜水への溶解限度量の、バニリン酸と、
(c)水性CMPスラリー組成物のpHを2.8〜6に調整するのに十分な量の硝酸と、
(d)0.6重量%から4.0重量%のプロリン
(e)任意に、イソプロピルアルコールと殺生物剤からなる群から選択される1種以
上
から構成される水性CMPスラリー組成物を供給する段階、及び
(ii)前記研磨パッド及び前記対象物表面を、その間に配置された前記CMPスラリー組成物とともに押圧しつつ、前記研磨パッドと前記対象物表面を互いに相対的に動かし、前記表面から二酸化ケイ素を削り取る段階を含むことを特徴とする方法。 - 請求項6の方法であり、化学的機械研磨に先立ち、前記セリア研磨粒子が水中に分散していることを特徴とする方法。
- 請求項6の方法であり、最初に、前記セリア研磨粒子を研磨パッドに接着させておき、その後、化学的機械研磨の際に水中に分散させることを特徴とする方法。
- 請求項6の方法であり、ILDもしくはMEMS処理において、前記二酸化ケイ素が前記対象物表面から除去されることを特徴とする方法。
- 請求項6の方法であり、STI処理において、窒化ケイ素に優先して前記二酸化ケイ素が前記対象物表面から除去されることを特徴とする方法。
- 請求項6の方法であり、前記CMPスラリー組成物が、イソプロピルアルコールを含有することを特徴とする方法。
- 請求項6の方法であり、前記セリア研磨粒子の最大径が、10,000nm未満であることを特徴とする方法。
- 請求項12の方法であり、前記セリア研磨粒子の平均径が、100nm〜150nmであることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9638008P | 2008-09-12 | 2008-09-12 | |
US61/096,380 | 2008-09-12 | ||
PCT/US2009/054824 WO2010030499A1 (en) | 2008-09-12 | 2009-08-25 | Chemical-mechanical polishing compositions and methods of making and using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012502501A JP2012502501A (ja) | 2012-01-26 |
JP5518869B2 true JP5518869B2 (ja) | 2014-06-11 |
Family
ID=42005427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526902A Active JP5518869B2 (ja) | 2008-09-12 | 2009-08-25 | 化学的機械研磨用組成物、その製造方法、及びその使用方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8409990B2 (ja) |
EP (1) | EP2321378B1 (ja) |
JP (1) | JP5518869B2 (ja) |
KR (1) | KR101603361B1 (ja) |
CN (1) | CN102149789A (ja) |
TW (1) | TWI460239B (ja) |
WO (1) | WO2010030499A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8382016B2 (en) * | 2009-02-25 | 2013-02-26 | Thiele Kaolin Company | Nano particle mineral pigment |
RU2608890C2 (ru) * | 2010-09-08 | 2017-01-26 | Басф Се | Водные полирующие композиции, содержащие n-замещенные диазений диоксиды и/или соли n -замещенных n'-гидрокси-диазений оксидов |
US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
WO2017011115A1 (en) | 2015-07-10 | 2017-01-19 | Ferro Corporation | Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates |
KR102463863B1 (ko) | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
WO2017030710A1 (en) | 2015-08-19 | 2017-02-23 | Ferro Corporation | Slurry composition and method of use |
WO2018038885A1 (en) | 2016-08-26 | 2018-03-01 | Ferro Corporation | Slurry composition and method of selective silica polishing |
KR101823083B1 (ko) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
WO2018052133A1 (ja) * | 2016-09-16 | 2018-03-22 | ニッタ・ハース株式会社 | 研磨パッド |
US10816891B2 (en) * | 2016-12-14 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and fabrication method therefor |
TWI663231B (zh) * | 2017-04-17 | 2019-06-21 | Cabot Microelectronics Corporation | 自停止性拋光組合物及用於大塊氧化物平坦化之方法 |
KR102354378B1 (ko) * | 2019-08-27 | 2022-01-21 | 엘티씨에이엠 주식회사 | 과산화수소를 이용한 질화티탄막 식각용 고선택비 식각액 조성물 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1998049723A1 (en) * | 1997-04-30 | 1998-11-05 | Minnesota Mining And Manufacturing Company | Method of planarizing the upper surface of a semiconductor wafer |
US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP2001007059A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6468910B1 (en) * | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
JP2001185514A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6569349B1 (en) * | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
EP2418258A1 (en) * | 2001-02-20 | 2012-02-15 | Hitachi Chemical Company, Ltd. | Polishing slurry and method of polishing substrate |
JP5288697B2 (ja) * | 2005-10-14 | 2013-09-11 | 花王株式会社 | 半導体基板用研磨液組成物 |
JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
US20080142375A1 (en) * | 2006-12-13 | 2008-06-19 | Francois Doniat | Electrolyte formulation for electrochemical mechanical planarization |
-
2009
- 2009-08-25 KR KR1020117003391A patent/KR101603361B1/ko active IP Right Grant
- 2009-08-25 US US12/673,834 patent/US8409990B2/en active Active
- 2009-08-25 CN CN2009801355713A patent/CN102149789A/zh active Pending
- 2009-08-25 JP JP2011526902A patent/JP5518869B2/ja active Active
- 2009-08-25 EP EP09813441.4A patent/EP2321378B1/en active Active
- 2009-08-25 WO PCT/US2009/054824 patent/WO2010030499A1/en active Application Filing
- 2009-09-10 TW TW098130472A patent/TWI460239B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2012502501A (ja) | 2012-01-26 |
KR20110068973A (ko) | 2011-06-22 |
EP2321378B1 (en) | 2014-03-05 |
TW201016806A (en) | 2010-05-01 |
US20110223764A1 (en) | 2011-09-15 |
CN102149789A (zh) | 2011-08-10 |
TWI460239B (zh) | 2014-11-11 |
US8409990B2 (en) | 2013-04-02 |
EP2321378A1 (en) | 2011-05-18 |
EP2321378A4 (en) | 2011-12-21 |
KR101603361B1 (ko) | 2016-03-14 |
WO2010030499A1 (en) | 2010-03-18 |
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