TWI508154B - 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 - Google Patents
包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 Download PDFInfo
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- TWI508154B TWI508154B TW100108479A TW100108479A TWI508154B TW I508154 B TWI508154 B TW I508154B TW 100108479 A TW100108479 A TW 100108479A TW 100108479 A TW100108479 A TW 100108479A TW I508154 B TWI508154 B TW I508154B
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- chemical mechanical
- mechanical polishing
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- polycrystalline germanium
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- 239000000758 substrate Substances 0.000 title claims description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 23
- 229920005591 polysilicon Polymers 0.000 title claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 3
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000007517 polishing process Methods 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 238000005498 polishing Methods 0.000 claims description 120
- 239000000126 substance Substances 0.000 claims description 103
- 239000000203 mixture Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 50
- 125000002015 acyclic group Chemical group 0.000 claims description 48
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 46
- -1 sulfonic acid compound Chemical class 0.000 claims description 42
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 38
- 229910052732 germanium Inorganic materials 0.000 claims description 37
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 29
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 29
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 10
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- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 4
- 239000007771 core particle Substances 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 2
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
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- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- AXTYOFUMVKNMLR-UHFFFAOYSA-N dioxobismuth Chemical compound O=[Bi]=O AXTYOFUMVKNMLR-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
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- 229910021485 fumed silica Inorganic materials 0.000 description 1
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- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000007522 mineralic acids Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於化學機械研磨方法。更特別地,本發明係關於用於研磨在氧化矽與氮化矽之至少一者之存在下具有多晶矽之基板的化學機械研磨方法。
於積體電路及其他電子裝置之製造中,係將多層之導電材料、半導電材料及介電材料沉積於半導體晶圓之表面上或自半導體晶圓之表面移除。可藉由多種沉積技術沉積導電材料、半導電材料及介電材料之薄層。於現代加工中,一般沉積技術係包括物理氣相沉積(PVD)(也稱為濺射)、化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)及電化學鍍覆(ECP)。
由於依序沉積與移除多層材料層,該晶圓之最上表面變為非平面。因為後續之半導體加工(如,金屬化)需要該晶圓具有平坦之表面,需要將該晶圓平面化。平面化係有用於移除非所欲之表面形貌及表面缺陷,如粗糙表面、聚結(agglomerated)之材料、晶格損傷、刮痕以及經污染之材料或層。
化學機械平面化或化學機械研磨(CMP)係用以平面化基板如半導體晶圓之一般技術。於傳統CMP中,晶圓係安裝於載體組合件上並定位為與CMP設備之研磨墊接觸。該載體組合件對該晶圓提供可控之壓力,將其壓抵該研磨墊。藉由外加之驅動力將該墊相對於該晶圓移動(如,轉動)。於此同時,將研磨組成物(“漿料”)或其他研磨溶液提供至該晶圓與該研磨墊之間。因此,藉由墊表面與漿料之化學及機械作用,將該晶圓表面研磨並使其成平面。
一種用於隔離半導體裝置之元件的方法(稱為淺溝槽隔離(STI)製程)傳統上涉及使用形成於矽基板上之氮化矽層、形成於氮化矽層中之淺溝槽以及沉積以填充該等溝槽之介電材料(如,氧化物)。典型係將過量之介電材料沉積於基板之頂上,以保證該等溝槽之完全填充。隨後,使用化學機械平面化技術移除過量之介電材料層以暴露氮化矽層。
過往之裝置設計強調氧化矽對氮化矽之化學機械平面化選擇性(亦即,氧化矽之移除速率相對於氮化矽之移除速率為更高)。於此等裝置設計中,氮化矽層係作為化學機械平面化製程之停止層。
近來,某些裝置的設計需要用於化學機械平面化製程研磨組成物,該組成物提供氧化矽與氮化矽之至少一者優先多晶矽之選擇性(亦即,氧化矽與氮化矽之至少一者之移除速率相對於多晶矽之移除速率為更高)。
一種於提供氧化矽與氮化矽之至少一者相對於多晶矽之選擇性之化學機械平面化製程中的研磨調配物係於Dysard等人之美國專利申請案公開第2007/0077865號中揭露之。Dysard等人揭露了一種化學機械性研磨基板之方法,該方法係包含:(i)將包含多晶矽及選自氧化矽及氮化矽之材料的基板與包含下列者之化學機械研磨系統接觸:(a)研磨劑、(b)液體載劑、(c)以該液體載劑及溶解或懸浮於該載劑中之任何組分的重量為基準計之約1ppm至約100ppm之具有HLB為約15或更低之聚環氧乙烷/聚環氧丙烷共聚物,以及(d)研磨墊;(ii)將該研磨墊相對於該基板移動;以及(iii)磨耗(abrading)該基板之至少一部分,以研磨該基板。
另一種提供氧化矽與氮化矽之至少一者相對於多晶矽之選擇性之用於化學機械平面化製程中的研磨調配物係於帕克(Park)等人之美國專利第6,626,968號中揭露。Park等人揭露了一種用於同時研磨具有氧化矽層及多晶矽層之表面的化學機械研磨組成物,該組成物之pH為7至11且為漿料形式,該漿料組成物基本上由水、選自由矽石(SiO2
)、氧化鋁(Al2
O3
)、氧化鈰(CeO2
)、氧化錳(magania)(Mn2
O3
)及其混合物所組成之群組的研磨劑顆粒,以及約0.001重量%至約5重量%之選自由聚乙烯基甲基醚(PVME)、聚乙二醇(PEG)、聚氧乙烯23月桂基醚(POLE)、聚丙酸(PPA)、聚丙烯酸(PAA)、聚醚二醇雙醚(PEGBE)及其混合物所組成之群組的聚合物添加劑,其中,該聚合物添加劑係改善氧化矽層之移除相對於多晶矽層之移除的選擇比。
雖然,為了支持裝置設計之動態場以用於半導體系統製造,對於配製為提供所欲之研磨性質之平衡以適應改變之設計需求的化學機械研磨組成物,仍繼續存在需求。舉例而言,對於下述化學機械研磨組成物仍存在需求:展現經調適(tailored)之移除速率以及使氧化矽與氮化矽之至少一者相對於多晶矽更容易移除之移除速率選擇性。
本發明係提供一種用於基板之化學機械研磨的方法,係包含:提供基板,其中,該基板係包含多晶矽及氧化矽與氮化矽之至少一者;提供化學機械研磨組成物,該化學機械研磨組成物係包含(較佳係基本上由下述者組成)下述者作為起始組分:水;研磨劑;及非環狀有機磺酸化合物,其中,該非環狀有機磺酸化合物係具有含6個至30個碳原子之非環狀疏水部以及含10個至300個碳原子之非離子性非環狀親水部;提供具有研磨表面之化學機械研磨墊;相對於該基板移動該研磨表面;將該化學機械研磨組成物分配至該研磨表面上;以及磨耗該基板之至少一部分,以研磨該基板;其中,至少部分之該多晶矽自該基板移除;以及,其中,至少部分之該氧化矽與氮化矽之至少一者自該基板移除。
本發明亦提供一種用於基板之化學機械研磨的方法,係包含:提供基板,其中,該基板係包含多晶矽及氧化矽與氮化矽之至少一者;提供化學機械研磨組成物,該化學機械研磨組成物係包含(較佳係基本上由下述者組成)下述者作為起始組分:水;研磨劑;以及非環狀有機磺酸化合物,其中,該非環狀有機磺酸化合物係具有含6個至30個碳原子之非環狀疏水部以及含10個至300個碳原子之非離子性非環狀親水部;提供具有研磨表面之化學機械研磨墊;相對於該基板移動該研磨表面;將該化學機械研磨組成物分配至該研磨表面上;以及磨耗該基板之至少一部份,以研磨該基板;其中,至少部分之該多晶矽自該基板移除;其中,至少部分之該氧化矽與氮化矽之至少一者自該基板移除;以及,其中,該化學機械研磨組成物係展現研磨pH為2至5。
本發明進一步提供一種用於基板之化學機械研磨的方法,係包含:提供基板,其中,該基板係包含多晶矽及氧化矽與氮化矽之至少一者;提供化學機械研磨組成物,該化學機械研磨組成物係包含(較佳係基本上由下述者組成)下述者作為起始組分:水;研磨劑;以及非環狀有機磺酸化合物,其中,該非環狀有機磺酸化合物係具有式R(EO)x
SO3
Na,其中,R係具有6個至30個碳原子之脂肪醇;EO為環氧乙烷;以及x為10至300;提供具有研磨表面之化學機械研磨墊;相對於該基板移動該研磨表面;將該化學機械研磨組成物分配至該研磨表面上;以及磨耗該基板之至少一部分,以研磨該基板;其中,至少部分之該多晶矽自該基板移除;其中,至少部分之該氧化矽與氮化矽之至少一者自該基板移除;以及,其中,該化學機械研磨組成物係以無機酸調節pH而展現研磨pH為2至5。
本發明之化學機械研磨方法有用於研磨包含與氧化矽及氮化矽之至少一者組合之多晶矽的基板。用於本發明之方法中的化學機械研磨組成物係含有抑制多晶矽移除速率量之非環狀有機磺酸化合物,該化學機械研磨組成物對於氧化矽與氮化矽之至少一者之移除速率有最小效果。
本文及後附申請專利範圍中關於將非環狀有機磺酸化合物加入化學機械研磨組成物中而獲得之移除速率抑制(對於以埃(Å)/分鐘(min)測量之移除速率)所使用之術語“實質上較低”,係意指多晶矽之移除速率為≧20%較低。亦即,當多晶矽移除速率實質上較低時,將滿足下述表式:((A0
-A)/A0
)*100≧20%其中,A係含有非環狀有機磺酸化合物的本發明之方法中使用之化學機械研磨組成物的多晶矽移除速率(以Å/分鐘為單位);A0
係在除了該化學機械研磨組成物不含該非環狀有機磺酸化合物之外的相同條件下獲得之多晶矽移除速率(以Å/分鐘為單位)。
本文及後附申請專利範圍中關於將非環狀有機磺酸化合物加入化學機械研磨組成物中而獲得之氧化矽或氮化矽之移除速率的變化所使用之術語“實質上不變”,係意指氧化矽或氮化矽之移除速率(以Å/分鐘為單位)的變化≦10%。亦即,當氧化矽或氮化矽移除速率實質上不變時,將滿足下述表式(((B0
-B)之絕對值)/B0
)*100≦10%其中,B係含有非環狀有機磺酸化合物的本發明之方法中使用之化學機械研磨組成物的氧化矽或氮化矽移除速率;B0
係在除了該化學機械研磨組成物不含非環狀有機磺酸化合物之外的相同條件下獲得之氧化矽或氮化矽移除速率。
在本發明之化學機械研磨方法中使用之化學機械研磨組成物中的非環狀有機磺酸化合物可藉由通式R-SO3
H或作為鹽R-SO3 -
表示之,其中,R包含非環狀疏水部及非離子性非環狀親水部。本文中,磺酸部分(moiety)(亦即,-SO3
H)與磺酸根部分(-SO3 -
)可互換使用。
非環狀有機磺酸化合物中之非環狀疏水部係具有適於水溶解度之長度之長鏈非環狀碳氫化合物。特別地,該非環狀疏水部具有總數為6個至30個之碳原子。較佳地,該非環狀疏水部具有8個至20個碳原子,更佳具有12個至16個碳原子。該非環狀疏水部可為直鏈或為分支鏈。該非環狀疏水部可係飽和或不飽和。最佳地,該非環狀疏水部係來自脂肪醇之直鏈。
該非環狀有機磺酸化合物中之非離子性非環狀親水部係含有10個至300個碳原子。較佳地,該非離子性非環狀親水部係含有20個至200個碳原子。又更佳地,該非離子性非環狀親水部係含有25個至150個碳原子。該非離子性非環狀親水部可為直鏈或為分支鏈。該非離子性非環狀親水部可係飽和或不飽和。較佳地,該非離子性非環狀親水部係飽和或不飽和之直鏈聚環氧烷(polyalkylene oxide)。最佳地,該非離子性非環狀親水部係直鏈聚環氧乙烷。
視需要將該非環狀有機磺酸化合物作為銨鹽、鉀鹽、四級銨鹽、鈉鹽或鋰鹽加入本發明之方法所使用之化學機械研磨組成物中。較佳地,該非環狀有機磺酸化合物係作為鈉鹽加入本發明之方法所使用之化學機械研磨組成物中。
較佳地,該非環狀有機磺酸化合物為聚乙二醇醚硫酸鹽(polyglycol ether sulfate)。更佳地,該非環狀有機磺酸化合物係具有式R(EO)x
SO3
Na,其中,R係具有6個至30個碳原子之脂肪醇(較佳係8個至20個碳原子,又更佳地,係12個至16個碳原子);EO為環氧乙烷;以及x為10至300(較佳20個至200個碳原子;又更佳25個至150個碳原子;最佳25個至40個碳原子)。
選擇在本發明之化學機械研磨方法中使用之化學機械研磨組成物之非環狀有機磺酸化合物的量,以調適多晶矽移除速率相對於氧化矽及氮化矽之至少一者之移除速率。所使用之化學機械研磨組成物較佳係含有0.0001至1 wt%之非環狀有機磺酸化合物作為起始組分。更佳地,所使用之化學機械研磨組成物係包含0.01至1wt%,又更佳0.01至0.1wt%,最佳0.01至0.05 wt%之該非環狀有機磺酸化合物作為起始組分。
在本發明之化學機械研磨方法中使用之化學機械研磨組成物中含有的水較佳係經去離子化及經蒸餾之至少一者以限制附隨之雜質。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係含有0.1至40wt%之研磨劑;較佳5至25wt%之研磨劑。所使用之研磨劑較佳係具有≦100奈米(nm),更佳10至100nm,最佳25至60nm之平均顆粒尺寸。
適用於在本發明之化學機械研磨方法中使用之化學機械研磨組成物的研磨劑係包括,舉例而言,無機氧化物、無機氫氧化物、無機氫氧化物氧化物、金屬硼化物、金屬碳化物、金屬氮化物、聚合物顆粒、以及包括前述之至少一者的混合物。適當之無機氧化物係包括,舉例而言,矽石(SiO2
)、氧化鋁(Al2
O3
)、氧化鋯(ZrO2
)、氧化鈰(CeO2
)、氧化錳(MnO2
)、氧化鈦(TiO2
)或包含前述氧化物之至少一者之組合。如必要,亦可使用此等無機氧化物之經修飾之形式,如經有機聚合物塗覆之無機氧化物顆粒及經無機塗覆之顆粒。適當之金屬碳化物、硼化物及氮化物係包括,舉例而言,碳化矽、氮化矽、碳氮化矽(SiCN)、碳化硼、碳化鎢、碳化鋯、硼化鋁、碳化鉭、碳化鈦、或包含前述碳化物、硼化物及氮化物之至少一者的組合。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物的較佳研磨劑係膠體矽石(colloidal silica)。較佳地,所使用之膠體矽石係含有燻製矽石(fumed silica)、沉澱之矽石及聚結之矽石之至少一者。較佳地,所使用之膠體矽石係具有≦100nm,更佳10至100nm,最佳25至60 nm之平均顆粒尺寸;且佔據該化學機械研磨組成物之0.1至40wt%,較佳1至30wt%,最佳15至25wt%。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物視需要進一步包含選自分散劑、界面活性劑、緩衝劑、抗發泡劑及殺生物劑之額外的添加劑。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物係具有≦5,較佳2至4,更佳2至3之pH。所使用之化學機械研磨組成物可包括無機及有機pH調節劑。視需要,該pH調節劑係選自無機酸(如,硝酸、硫酸、鹽酸及磷酸)。
於本發明之化學機械研磨方法中被研磨之基板係包含多晶矽組合上氧化矽與氮化矽之至少一者。
該基板中之多晶矽可為本領域中已知之任何適當之多晶矽材料。該多晶矽可處於任何適當之相中,且可為非晶形、晶形或其組合。
該基板中之氧化矽,若存在,可係本領域中已知之任何適當之氧化矽材料;舉例而言,硼磷矽酸玻璃(BPSG)、電漿蝕刻之原矽酸四乙酯(PETEOS)、熱氧化物、未摻雜矽酸玻璃、高密度電漿(HDP)氧化物。
該基板中之氮化矽,若存在,可係本領域中已知之任何適當之氮化矽材料;舉例而言,Si3
N4
。
於本發明之化學機械研磨方法中使用之化學機械研磨墊可係本領域中已知之任何適當之研磨墊。該化學機械研磨墊可視需要選自織物(woven)或非織物(non-woven)之研磨墊。該化學機械研磨墊可由具有各種密度、硬度、厚度、可壓縮性及模數的任何適當之聚合物製成。該化學機械研磨墊可如所欲者經溝紋化及穿孔。
於本發明之化學機械研磨方法中使用之化學機械研磨組成物中含有之非環狀有機磺酸化合物較佳係以較其抑制氧化矽及氮化矽之至少一者的移除速率者更大的差分速率來抑制多晶矽之移除速率(以每分鐘之埃(/分鐘)測量者)。若吾人將膜X之移除速率的相對抑制(ΔX)定義為ΔX=(X0
-X)/X0
,其中,X0
與X係表示以/分鐘使用不添加(X0
)及添加有(X)非環狀有機磺酸化合物的研磨組成物所測量之膜X的移除速率者。於本發明之方法所使用之化學機械研磨組成物中包括有非環狀有機磺酸化合物,較佳係滿足下述方程式之至少一者:(i)Δ多晶矽>Δ氧化矽,以及(ii)Δ多晶矽>ΔSi3
N4
,如於實施例中詳述之研磨條件下測量者。舉例而言,若使用不含有非環狀有機磺酸化合物的組成物於實施例中詳述之條件下研磨係提供對於多晶矽為500/分鐘且對於二氧化矽及氮化矽為500/分鐘之控制移除速率X0
;且將非環狀有機磺酸化合物加入研磨組成物中會使多晶矽之移除速率降低至X=300/分鐘,隨後二氧化矽及氮化矽之至少一者的移除速率必須>300/分鐘。
較佳地,於本發明之化學機械研磨方法中,藉由包含非環狀有機磺酸化合物的化學機械研磨組成物所展現之多晶矽的研磨移除速率係實質上低於在除了不含有該非環狀有機磺酸化合物之外之相同條件下獲得的多晶矽之移除速率。較佳地,透過將非環狀有機磺酸化合物加入本發明之方法所使用之化學機械研磨組成物中而獲得之多晶矽移除速率抑制為≧25%;更佳≧50%(亦即,移除速率抑制=((A0
-A)/A0
)*100)),如於實施例中詳述之研磨條件下測量者。典型地,透過將非環狀有機磺酸化合物加入本發明之方法所使用之化學機械研磨組成物中而獲得之多晶矽移除速率抑制係≦200%,如於實施例中詳述之研磨條件下測量者。
較佳地,於本發明之化學機械研磨方法中使用之化學機械研磨組成物係展現對於多晶矽之研磨移除速率抑制為≧20%,更佳≧25%,最佳≧50%(亦即,移除速率抑制=((A0
-A)/A0
)*100)),如於實施例中詳述之研磨條件下測量者;且展現氧化矽與氮化矽之至少一者的研磨移除速率改變為≦10%;更佳≦7%;還更佳≦6%;且還更佳≦5%;最佳≦1%(亦即,移除速率改變=(((B0
-B)之絕對值)/B0
)*100,其中,B為以Å/分鐘表示之於本發明之方法中所使用之含有非環狀有機磺酸化合物之化學機械研磨組成物對氧化矽或氮化矽的移除速率;B0
為在除了該化學機械研磨組成物中不含有該非環狀有機磺酸化合物之外的相同條件下獲得的氧化矽或氮化矽移除速率),如於實施例中詳述之研磨條件下測量者。
較佳地,本發明之化學機械研磨方法可用以研磨基板,且氮化矽移除速率為≧800Å/分鐘,較佳≧1000Å/分鐘,更佳≧1,200Å/分鐘,還更佳≧1,400Å/分鐘,最佳≧1,500Å/分鐘,如於實施例中詳述之研磨條件下測量者;氮化矽相對於多晶矽之移除速率選擇比(亦即,氮化矽之移除速率:多晶矽之移除速率)為≧2:1,較佳≧3:1,更佳≧5:1,且更佳≧6:1,如於實施例中詳述之研磨條件下測量者。
較佳地,本發明之化學機械研磨方法可用以研磨基板,且氧化矽移除速率為≧800/分鐘,較佳≧1000/分鐘,更佳≧1,200/分鐘,還更佳≧1,500/分鐘,最佳≧1,600/分鐘,如於實施例中詳述之研磨條件下測量者;氧化矽相對於多晶矽之移除速率選擇比(亦即,氧化矽之移除速率:多晶矽之移除速率)為≧2:1,較佳≧3:1,更佳≧5:1,且更佳≧7:1,如於實施例中詳述之研磨條件下測量者。
較佳地,本發明之化學機械研磨方法同時提供氧化矽及氮化矽兩者相對於多晶矽之選擇性研磨(亦即,移除)(亦即,相對於多晶矽之移除速率展現較高之氧化矽及氮化矽兩者之移除速率,如於實施例中詳述之研磨條件下測量者)。
本發明之化學機械研磨方法所使用之化學機械研磨組成物使得於低公稱研磨墊壓力(nominal polishing pad pressure)如3至35千帕(kPa)下操作為可能。該低公稱研磨墊壓力藉由降低刮擦及其他非所欲之研磨缺陷來改善研磨效能,並最小化對於易碎材料之損傷。
將於下述實施例中詳細揭示本發明之某些具體例。
[實施例]
化學機械研磨組成物
所測試之化學機械研磨組成物(CMPC)係於表1中描述之。化學機械研磨組成物A係比較性調配物,其係不處於本發明所主張之範疇之內。
I於實施例中所使用之非環狀有機磺酸化合物係聚二醇醚硫酸鹽,具體而言,由Cogins Chemicals Group製造且具有式R(EO)x
SO3
Na之公稱組成之Disponil FES 77,其中,R為脂肪醇;EO為環氧乙烷。
£於實施例中所使用之研磨劑為30H50i膠體矽石(由AZ Electronic Materials製造,自The Dow Chemical Company獲得)。
¥該組成物之pH係使用HNO3
或KOH如所需者調節之。
研磨測試
使用200mm覆氈晶圓(blanket wafer)測試表1中描述之化學機械研磨組成物,所使用之晶圓具體為(A)TEOS介電晶圓;(B)Si3
N4
介電晶圓以及(C)非晶形多晶矽介電晶圓。使用型號6EC之Strasbaugh nSpireTM
CMP系統旋轉式研磨平臺,以使用包含聚胺甲酸酯研磨層及浸漬有聚胺甲酸酯之非織物子墊(subpad)(亦即,自Rohm and Haas Electronic Materials CMP Inc.購買之IC1010TM
研磨墊)之研磨墊來研磨該實施例中所有的覆氈晶圓,該聚胺甲酸酯研磨層係含有聚合物中空芯微粒。於全部實施例中所使用之研磨條件係包括:壓板速度為每分鐘93轉(rpm);載體速度為87rpm;研磨介質流速為200mL/分鐘;以及下壓力為20.7kPa。每一研磨實驗之移除速率係於表2中提供。注意該等移除速率係自研磨之前及之後的膜厚度計算而得。具體而言,該等移除速率係使用自KLA-Tencor購買之SpectraFX 200光學薄膜度量系統予以測定。
Claims (9)
- 一種用於基板之化學機械研磨的方法,係包含:提供基板,其中,該基板係包含多晶矽及氧化矽與氮化矽之至少一者;提供化學機械研磨組成物,該化學機械研磨組成物基本由作為起始組分之下列者所組成:水;研磨劑;以及非環狀有機磺酸化合物,其中,該非環狀有機磺酸化合物係具有式R(EO)x SO3 Na,其中,R係具有6個至30個碳原子之脂肪醇;EO為環氧乙烷;以及x為10至300;提供具有研磨表面之化學機械研磨墊;相對於該基板移動該研磨表面;將該化學機械研磨組成物分配至該研磨表面上;以及磨耗該基板之至少一部分,以研磨該基板;其中,至少部分之該多晶矽自該基板移除;其中,至少部分之該氧化矽與氮化矽之至少一者自該基板移除;其中,藉由將該非環狀有機磺酸化合物加入該化學機械研磨組成物中使該氧化矽及氮化矽之移除速率的變化≦10%;以及,其中,由於將該非環狀有機磺酸化合物加入該化學機械研磨組成物中使該多晶矽之移除速率為≧20%較低。
- 如申請專利範圍第1項所述之方法,其中,該基板於氧化矽存在下係包含多晶矽,以及,其中,該化學機 械研磨組成物係展現氧化矽相對於多晶矽之移除速率選擇性為≧2:1。
- 如申請專利範圍第2項所述之方法,其中,於200mm研磨機上,在壓盤速度為每分鐘93轉,載體速度為每分鐘87轉,化學機械研磨組成物流速為200mL/分鐘,公稱下壓力為20.7kpa下,該化學機械研磨組成物係展現氧化矽移除速率為≧800Å/分鐘;以及其中,該化學機械研磨墊係包含具聚合物中空芯微粒之聚胺甲酸酯研磨層以及經聚胺甲酸酯浸漬之非織物子墊。
- 如申請專利範圍第3項所述之方法,其中,該多晶矽係非晶形多晶矽,以及,其中,該化學機械研磨組成物係展現氧化矽相對於非晶形多晶矽之移除速率選擇性為≧2:1。
- 如申請專利範圍第3項所述之方法,其中,該多晶矽係非晶形多晶矽,以及,其中,該化學機械研磨組成物係展現氧化矽相對於非晶形多晶矽之移除速率選擇性為≧5:1。
- 如申請專利範圍第1項所述之方法,其中,該基板係在氮化矽存在下包含多晶矽,以及,其中,該化學機械研磨組成物係展現氮化矽相對於多晶矽之移除速率選擇性為≧2:1。
- 如申請專利範圍第6項所述之方法,其中,於200mm研磨機上,在壓盤速度為每分鐘93轉,載體速度為每分鐘87轉,化學機械研磨組成物流速為200mL/分鐘, 公稱下壓力為20.7kpa下,該化學機械研磨組成物係展現氮化矽移除速率為≧800Å/分鐘;以及其中,該化學機械研磨墊係包含具聚合物中空芯微粒之聚胺甲酸酯研磨層以及經聚胺甲酸酯浸漬之非織物子墊。
- 如申請專利範圍第7項所述之方法,其中,該多晶矽係非晶形多晶矽,以及,其中,該化學機械研磨組成物係展現氮化矽相對於非晶形多晶矽之移除速率選擇性為≧2:1。
- 如申請專利範圍第7項所述之方法,其中,該多晶矽係非晶形多晶矽,以及,其中,該化學機械研磨組成物係展現氮化矽相對於非晶形多晶矽之移除速率選擇性為≧5:1。
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