JP2003509836A5 - - Google Patents

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JP2003509836A5
JP2003509836A5 JP2000620671A JP2000620671A JP2003509836A5 JP 2003509836 A5 JP2003509836 A5 JP 2003509836A5 JP 2000620671 A JP2000620671 A JP 2000620671A JP 2000620671 A JP2000620671 A JP 2000620671A JP 2003509836 A5 JP2003509836 A5 JP 2003509836A5
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Japan
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JP2000620671A
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JP4834228B2 (ja
JP2003509836A (ja
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Priority claimed from US09/318,403 external-priority patent/US6291298B1/en
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JP2000620671A 1999-05-25 2000-05-24 複数の厚さを有するゲート酸化物層を備えたトレンチ半導体素子を製造する方法 Expired - Fee Related JP4834228B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/318,403 US6291298B1 (en) 1999-05-25 1999-05-25 Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
US09/318,403 1999-05-25
PCT/US2000/014363 WO2000072372A1 (en) 1999-05-25 2000-05-24 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same

Publications (3)

Publication Number Publication Date
JP2003509836A JP2003509836A (ja) 2003-03-11
JP2003509836A5 true JP2003509836A5 (enExample) 2007-07-12
JP4834228B2 JP4834228B2 (ja) 2011-12-14

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JP2000620671A Expired - Fee Related JP4834228B2 (ja) 1999-05-25 2000-05-24 複数の厚さを有するゲート酸化物層を備えたトレンチ半導体素子を製造する方法

Country Status (9)

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US (6) US6291298B1 (enExample)
EP (2) EP1186019B1 (enExample)
JP (1) JP4834228B2 (enExample)
KR (1) KR100700322B1 (enExample)
CN (1) CN1205658C (enExample)
AU (1) AU5044600A (enExample)
DE (1) DE60044396D1 (enExample)
TW (1) TW457629B (enExample)
WO (1) WO2000072372A1 (enExample)

Families Citing this family (185)

* Cited by examiner, † Cited by third party
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