CN101887852B - 深沟槽填充方法 - Google Patents
深沟槽填充方法 Download PDFInfo
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- CN101887852B CN101887852B CN2009100572512A CN200910057251A CN101887852B CN 101887852 B CN101887852 B CN 101887852B CN 2009100572512 A CN2009100572512 A CN 2009100572512A CN 200910057251 A CN200910057251 A CN 200910057251A CN 101887852 B CN101887852 B CN 101887852B
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CN2009100572512A CN101887852B (zh) | 2009-05-13 | 2009-05-13 | 深沟槽填充方法 |
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CN2009100572512A CN101887852B (zh) | 2009-05-13 | 2009-05-13 | 深沟槽填充方法 |
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CN101887852A CN101887852A (zh) | 2010-11-17 |
CN101887852B true CN101887852B (zh) | 2012-08-01 |
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CN2009100572512A Active CN101887852B (zh) | 2009-05-13 | 2009-05-13 | 深沟槽填充方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103035515B (zh) * | 2012-07-18 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 沟槽的填充方法 |
CN105990324A (zh) * | 2015-02-15 | 2016-10-05 | 华邦电子股份有限公司 | 半导体元件及其制造方法 |
WO2018165809A1 (en) * | 2017-03-13 | 2018-09-20 | Texas Instruments Incorporated | Transistor device with sinker contacts and methods for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1206935A (zh) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | 利用复合氧化膜的槽式隔离法 |
CN1416154A (zh) * | 2002-10-31 | 2003-05-07 | 上海华虹Nec电子有限公司 | 一种多层膜结构的半导体栅工艺处理方法 |
CN1205658C (zh) * | 1999-05-25 | 2005-06-08 | 理查德·K·威廉斯 | 具有多厚度栅极氧化层的槽型半导体器件的制造方法 |
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2009
- 2009-05-13 CN CN2009100572512A patent/CN101887852B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1206935A (zh) * | 1997-07-25 | 1999-02-03 | 三星电子株式会社 | 利用复合氧化膜的槽式隔离法 |
CN1205658C (zh) * | 1999-05-25 | 2005-06-08 | 理查德·K·威廉斯 | 具有多厚度栅极氧化层的槽型半导体器件的制造方法 |
CN1416154A (zh) * | 2002-10-31 | 2003-05-07 | 上海华虹Nec电子有限公司 | 一种多层膜结构的半导体栅工艺处理方法 |
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CN101887852A (zh) | 2010-11-17 |
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C06 | Publication | ||
PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |