KR100700322B1 - 복수의 두께를 갖는 게이트 산화물층을 구비한 트렌치반도체 장치 및 이를 제조하는 프로세스 - Google Patents
복수의 두께를 갖는 게이트 산화물층을 구비한 트렌치반도체 장치 및 이를 제조하는 프로세스 Download PDFInfo
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Abstract
Description
Claims (28)
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- 트렌치 게이트 반도체 디바이스(trench gate semiconductor device)를 제조하는 방법에 있어서,반도체 재료를 제공하는 단계와,상기 반도체 재료를 반응 챔버에 위치시키는 단계와,상기 반도체 재료의 표면에 트렌치를 형성하는 단계와,상기 반응 챔버 내에 유전체의 대전 입자들을 생성하여 유전체 층을 적층하는 단계와,상기 트렌치의 측벽(sidewall) 영역에서보다 상기 트렌치의 바닥 근처에서 더 큰 두께로 상기 유전체 층이 적층되도록 상기 대전 입자들이 상기 반도체 재료 쪽으로 이동하도록 하는 전기장을 상기 반응 챔버 내에 형성하는 단계와,상기 트렌치의 측벽의 영역에서 상기 유전체 층의 일부를 제거하는 단계와,상기 트렌치의 측벽에 게이트 산화물 층(gate oxide layer)을 형성하는 단계와,상기 트렌치 내에 전도성 재료를 적층하는 단계를구비하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서,상기 트렌치 내에 전도성 재료를 적층하는 단계는 제 1 폴리실리콘 층(a first polysilicon layer)을 적층하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 6 항에 있어서,상기 제 1 폴리실리콘 층의 표면이 상기 반도체 재료의 표면과 동일 평면이 되도록 상기 제 1 폴리실리콘 층의 일부를 제거하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 7 항에 있어서,상기 제 1 폴리실리콘 층을 산화시켜 제 2 산화물 층을 형성하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 6 항에 있어서,상기 제 1 폴리실리콘 층의 표면이 상기 반도체 재료의 표면 아래의 레벨이 되도록 상기 제 1 폴리실리콘 층의 일부를 제거하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 9 항에 있어서,상기 제 1 폴리실리콘 층을 산화시켜 제 2 산화물 층을 형성하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 9 항에 있어서,상기 제 1 폴리실리콘 층 위에 제 2 폴리실리콘 층을 적층하는 단계와,상기 트렌치의 상부 코너(upper corner)에서 상기 게이트 산화물 층의 일부를 덮는 상기 제 2 폴리실리콘 층을 남겨두면서 상기 제 2 폴리실리콘 층의 일부를 제거하는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 6 항에 있어서,상기 트렌치의 바닥 근처에서 상기 유전체 층을 덮는 상기 제 1 폴리실리콘 층의 제 2 부분을 남겨두면서 상기 제 1 폴리실리콘 층의 제 1 부분을 제거한 후에, 상기 트렌치의 측벽의 영역 내의 상기 유전체 층의 일부를 제거하는 단계와,상기 폴리실리콘 층의 상기 제 2 부분을 산화시키는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서,상기 유전체 층 위에 포토레지스트 층(photoresist layer)을 적층하는 단계와,상기 트렌치의 바닥 근처에서 상기 유전체 층을 덮는 상기 포토레지스트 층의 제 2 부분을 남겨두면서 상기 포토레지스트 층의 제 1 부분을 제거한 후에, 상기 트렌치의 측벽의 영역 내의 상기 유전체 층의 일부를 제거하는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서,상기 트렌치를 형성하는 단계는상기 반도체 재료 위에 하드 마스크 층(hard mask layer)을 형성하는 단계와,상기 하드 마스크 층에 제 1 개구부(opening)를 형성하여 상기 하드 마스크 층의 잔여부(remaining portion)를 생성하는 단계와,상기 제 1 개구부를 통해 상기 반도체 재료를 에칭하는 단계를 포함하며,상기 제조 방법은상기 하드 마스크 층의 잔여부를 제자리에 남겨두면서 상기 유전체 층을 적층하여, 상기 하드 마스크 층의 잔여부 위에 상기 유전체 층의 일부가 적층되도록 하는 단계-여기서, 상기 유전체 층은 상기 트렌치의 측벽 영역에서보다 상기 하드 마스크 층의 잔여부 위에 더 큰 두께로 적층됨-와,상기 제 1 개구부와 인접하는 상기 하드 마스크 층의 잔여부의 측면 모서리에 상기 제 1 폴리실리콘 층의 표면이 인접하도록 상기 제 1 폴리실리콘 층의 일부를 제거하는 단계와,상기 하드 마스크 층의 잔여부 위의 상기 유전체 층의 일부를 제거하는 단계와,상기 제 1 폴리실리콘 층의 표면을 산화시키는 단계와,상기 하드 마스크 층의 잔여부를 제거하는 단계를추가로 포함하는 것을 특징으로 하는 제조 방법.
- 제 14 항에 있어서,상기 하드 마스크 층은 실리콘 질화물(silicon nitride)을 포함하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서,상기 트렌치를 형성하는 단계는상기 반도체 재료 위에 하드 마스크 층을 형성하는 단계와,상기 하드 마스크 층 내에 제 1 개구부를 형성하는 단계와,상기 제 1 개구부를 통해 상기 반도체 재료를 에칭하는 단계를 포함하고,상기 제조 방법은상기 하드 마스크 층에 제 2 개구부를 형성하여 상기 하드 마스크 층의 잔여부를 생성하는 단계와,상기 제 2 개구부를 통해 상기 반도체 재료를 에칭하여 상기 반도체 재료 내에 제 2 트렌치를 형성하는 단계와,상기 하드 마스크 층의 잔여부를 제자리에 두면서 상기 유전체 층을 적층하여 상기 유전체 층의 일부가 상기 하드 마스크 층의 잔여부 위에 적층되도록 하는 단계와,상기 제 1 폴리실리콘 층의 일부를 제거하여 상기 제 1 및 제 2 개구부에 인접하는 상기 하드 마스크 층의 잔여부의 측면 모서리에 상기 제 1 폴리실리콘 층의 표면이 인접하도록 하는 단계와,상기 하드 마스크 층의 잔여부 위의 상기 유전체 층의 일부를 제거하는 단계와,상기 제 1 폴리실리콘 층과 상기 하드 마스크 층의 잔여부 위에 제 2 폴리실리콘 층을 적층하는 단계와,상기 제 1 트렌치의 영역으로부터 상기 제 2 폴리실리콘 층의 제 1 부분을 제거하고, 상기 제 2 트렌치의 영역 내의 상기 제 2 폴리실리콘 층의 제 2 부분을 남겨두는 단계와,상기 제 1 개구부 내의 상기 제 1 폴리실리콘 층의 표면을 산화시키는 단계와,상기 제 1 트렌치의 영역으로부터 상기 하드 마스크 층의 잔여부를 제거하는 단계를추가로 포함하는 것을 특징으로 하는 제조 방법.
- 제 16 항에 있어서,상기 하드 마스크 층은 실리콘 질화물을 포함하는 것을 특징으로 하는 제조 방법.
- 제 16 항에 있어서,상기 제 1 트렌치는 활성 어레이(active array) 내에 위치하며, 상기 제 2 트렌치는 게이트 버스 영역(gate bus region) 내에 위치하는 것을 특징으로 하는 제조 방법.
- 제 16 항에 있어서,상기 제 2 폴리실리콘 층의 제 1 부분을 제거하는 단계는 상기 제 2 폴리실리콘 층의 제 2 부분의 측면 모서리를 생성하며, 상기 제 1 개구부 내의 상기 제 1 폴리실리콘 층의 표면을 산화시키는 단계는 상기 제 2 폴리실리콘 층의 제 2 부분의 측면 모서리를 산화시키는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서, 상기 트렌치를 형성하는 단계는상기 반도체 재료의 표면 위에 하드 마스크 층을 적층하는 단계와,상기 하드 마스크 층 내에 제 1 개구부를 형성하여 상기 반도체 재료의 표면의 일 영역이 노출되도록 하고, 상기 제 1 개구부에 인접하는 상기 하드 마스크 층의 노출된 측면 모서리를 남겨두는 단계와,상기 하드 마스크 층, 상기 반도체 재료의 표면의 노출된 영역, 상기 하드 마스크 층의 노출된 측면 모서리를 덮는 질화물 층을 적층하는 단계와,상기 질화물 층을 비등방성으로(anisotropically) 에칭하여, 상기 하드 마스크 층의 노출된 측면 모서리 위에 스페이서(spacer)를 형성하는 단계-여기서, 상기 스페이서는 상기 반도체 재료 위에 제 2 개구부를 규정함-와상기 제 2 개구부를 통해 상기 반도체 재료를 에칭하는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 20 항에 있어서,상기 하드 마스크 층을 적층하는 단계는 산화물-질화물-산화물 샌드위치(oxide-nitride-oxide sandwich)를 적층하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 20 항에 있어서,상기 전도성 재료를 에칭하여 상기 전도성 재료의 표면이 상기 스페이서와 인접하도록 하는 단계를 추가로 포함하는 것을 특징으로 하는 제조 방법.
- 제 5 항에 있어서,상기 유전체 층은 실리콘 이산화물 층(silicon dioxide layer)을 포함하며,상기 제조 방법은상기 트렌치의 측벽 위에 산화물 라이닝(oxide lining)을 성장시킨 후에 상기 유전체 층을 적층하는 단계와,상기 트렌치의 측벽 영역 내의 상기 산화물 라이닝의 일부와 상기 유전체 층을 제거하는 단계와,상기 산화물 라이닝보다 빨리 상기 유전체 층을 에칭하는 에칭제(etchant)로 상기 산화물 라이닝의 잔여부와 상기 유전체 층을 에칭하는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 23 항에 있어서,상기 에칭제는 HF 산(acid)을 포함하는 것을 특징으로 하는 제조 방법.
- 트렌치 게이트 반도체 디바이스를 제조하는 방법에 있어서,반도체 재료를 제공하는 단계와,상기 반도체 재료를 반응 챔버 내에 위치시키는 단계와,상기 반도체 재료의 표면에 트렌치를 형성하는 단계와,상기 트렌치의 측벽과 바닥에 산화물 라이닝(oxide lining)을 성장시키는 단계와,상기 트렌치 내에 폴리실리콘 층을 적층하는 단계와,상기 폴리실리콘 층의 일부가 상기 트렌치의 바닥 근처에 남아 있도록 상기 폴리실리콘 층을 에칭하는 단계와,상기 산화물 라이닝의 잔여부를 남겨 두면서 상기 트렌치의 측벽으로부터 상기 산화물 라이닝의 일부를 에칭하는 단계와,비등방성 실리콘 에칭을 수행하여 상기 폴리실리콘 층의 일부의 표면이 상기 산화물 라이닝의 잔여부의 표면 아래가 되도록 하는 단계와,상기 반도체 재료를 가열하여 상기 폴리실리콘 층의 일부의 표면 위에 제 1 산화물 층을 형성하고 상기 트렌치의 측벽 위에 제 2 산화물 층을 형성하는 단계와,상기 제 1 산화물 층을 제거하는 단계와,상기 트렌치 내에 폴리실리콘 층을 적층하여 게이트 전극을 형성하는 단계를포함하는 것을 특징으로 하는 제조 방법.
- 제 25 항에 있어서,상기 제 1 산화물 층을 제거하는 단계는 상기 제 2 산화물 층의 두께의 일부를 제거하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
- 제 25 항에 있어서,상기 폴리실리콘 층의 표면이 상기 반도체 재료의 표면과 대략 동일 평면이 될 때까지 상기 폴리실리콘 층을 에칭하는 단계와,상기 폴리실리콘 층의 표면을 산화시키는 단계를추가로 포함하는 것을 특징으로 하는 제조 방법.
- 트렌치 게이트 반도체 디바이스를 제조하는 방법에 있어서,반도체 재료를 제공하는 단계와,상기 반도체 재료를 반응 챔버에 위치시키는 단계와,상기 반도체 재료의 표면에 트렌치를 형성시키는 단계와,상기 트렌치의 측벽과 바닥에 산화물 라이닝을 성장시키는 단계와,상기 트렌치 내에 포토레지스트 층을 적층시키는 단계와,상기 포토레지스트 층의 일부를 제거하여, 상기 트렌치의 바닥 근처에서 상기 산화물 라이닝 위에 상기 포토레지스트 층의 잔여부를 남기는 단계와,상기 트렌치의 측벽으로부터 상기 산화물 라이닝을 에칭하는 단계와,상기 포토레지스트 층의 잔여부를 제거하는 단계와,상기 트렌치의 측벽 위에 게이트 산화물 층을 열적으로 성장시키는 단계와,상기 트렌치를 포토레지스트 층으로 채우는 단계를포함하는 것을 특징으로 하는 제조 방법.
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Application Number | Priority Date | Filing Date | Title |
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US09/318,403 US6291298B1 (en) | 1999-05-25 | 1999-05-25 | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US09/318,403 | 1999-05-25 |
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KR20020037726A KR20020037726A (ko) | 2002-05-22 |
KR100700322B1 true KR100700322B1 (ko) | 2007-03-29 |
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KR (1) | KR100700322B1 (ko) |
CN (1) | CN1205658C (ko) |
AU (1) | AU5044600A (ko) |
DE (1) | DE60044396D1 (ko) |
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EP2020681A2 (en) | 2009-02-04 |
EP2020681B1 (en) | 2011-09-14 |
US20040203200A1 (en) | 2004-10-14 |
EP1186019A1 (en) | 2002-03-13 |
WO2000072372A1 (en) | 2000-11-30 |
CN1360735A (zh) | 2002-07-24 |
US20010026961A1 (en) | 2001-10-04 |
US6900100B2 (en) | 2005-05-31 |
US7276411B2 (en) | 2007-10-02 |
KR20020037726A (ko) | 2002-05-22 |
CN1205658C (zh) | 2005-06-08 |
JP4834228B2 (ja) | 2011-12-14 |
TW457629B (en) | 2001-10-01 |
EP2020681A3 (en) | 2009-06-10 |
EP1186019B1 (en) | 2010-05-12 |
AU5044600A (en) | 2000-12-12 |
WO2000072372A8 (en) | 2002-09-26 |
US20050215012A1 (en) | 2005-09-29 |
US7282412B2 (en) | 2007-10-16 |
EP1186019A4 (en) | 2004-05-26 |
DE60044396D1 (de) | 2010-06-24 |
US20050215027A1 (en) | 2005-09-29 |
US7238568B2 (en) | 2007-07-03 |
US20050215013A1 (en) | 2005-09-29 |
US6291298B1 (en) | 2001-09-18 |
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