DE3856143D1 - Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff - Google Patents
Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem ZugriffInfo
- Publication number
- DE3856143D1 DE3856143D1 DE3856143T DE3856143T DE3856143D1 DE 3856143 D1 DE3856143 D1 DE 3856143D1 DE 3856143 T DE3856143 T DE 3856143T DE 3856143 T DE3856143 T DE 3856143T DE 3856143 D1 DE3856143 D1 DE 3856143D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- memory cell
- random access
- access memory
- dynamic random
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62149143A JPH073860B2 (ja) | 1987-06-17 | 1987-06-17 | 半導体記憶装置の製造方法 |
JP62306416A JP2642364B2 (ja) | 1987-12-03 | 1987-12-03 | 半導体記憶装置及びその製造方法 |
JP62314764A JP2627515B2 (ja) | 1987-12-10 | 1987-12-10 | 半導体記憶装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856143D1 true DE3856143D1 (de) | 1998-04-16 |
DE3856143T2 DE3856143T2 (de) | 1998-10-29 |
Family
ID=27319692
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856143T Expired - Lifetime DE3856143T2 (de) | 1987-06-17 | 1988-06-16 | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
DE3856528T Expired - Lifetime DE3856528T2 (de) | 1987-06-17 | 1988-06-16 | Dynamisches Speicherbauteil mit wahlfreiem Zugriff und Verfahren zu seiner Herstellung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856528T Expired - Lifetime DE3856528T2 (de) | 1987-06-17 | 1988-06-16 | Dynamisches Speicherbauteil mit wahlfreiem Zugriff und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US4974040A (de) |
EP (2) | EP0750347B1 (de) |
KR (1) | KR910002815B1 (de) |
DE (2) | DE3856143T2 (de) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910009805B1 (ko) * | 1987-11-25 | 1991-11-30 | 후지쓰 가부시끼가이샤 | 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법 |
DE3916228C2 (de) * | 1988-05-18 | 1995-06-22 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung |
KR910010167B1 (ko) * | 1988-06-07 | 1991-12-17 | 삼성전자 주식회사 | 스택 캐패시터 dram셀 및 그의 제조방법 |
JP2838412B2 (ja) * | 1988-06-10 | 1998-12-16 | 三菱電機株式会社 | 半導体記憶装置のキャパシタおよびその製造方法 |
DE3943617C2 (de) * | 1988-06-10 | 1996-03-14 | Mitsubishi Electric Corp | DRAM und Herstellungsverfahren dafür |
US5180683A (en) * | 1988-06-10 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing stacked capacitor type semiconductor memory device |
DE3918924C2 (de) * | 1988-06-10 | 1996-03-21 | Mitsubishi Electric Corp | Herstellungsverfahren für eine Halbleiterspeichereinrichtung |
JP2681285B2 (ja) * | 1988-09-19 | 1997-11-26 | 富士通株式会社 | 半導体記憶装置 |
JPH0282575A (ja) * | 1988-09-19 | 1990-03-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH02156566A (ja) * | 1988-12-08 | 1990-06-15 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US5219781A (en) * | 1988-12-08 | 1993-06-15 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing semiconductor memory device having a stacked type capacitor |
US5059548A (en) * | 1989-04-03 | 1991-10-22 | Hyundai Electronics Industries Co., Ltd. | Method of making a semiconductor memory device having a double stacked capacitor |
US5162249A (en) * | 1989-04-03 | 1992-11-10 | Hyundai Electronics Industries Co., Ltd. | Method of making semiconductor memory device having a double stacked capacitor |
US5314835A (en) * | 1989-06-20 | 1994-05-24 | Sharp Kabushiki Kaisha | Semiconductor memory device |
JP2724209B2 (ja) * | 1989-06-20 | 1998-03-09 | シャープ株式会社 | 半導体メモリ素子の製造方法 |
JPH0338061A (ja) * | 1989-07-05 | 1991-02-19 | Fujitsu Ltd | 半導体記憶装置 |
JPH0382077A (ja) * | 1989-08-24 | 1991-04-08 | Nec Corp | 半導体メモリ装置 |
JPH03104273A (ja) * | 1989-09-19 | 1991-05-01 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
EP0424623B1 (de) * | 1989-10-26 | 1995-07-12 | International Business Machines Corporation | Dreidimensionale Halbleiterstrukturen geformt aus ebenen Schichten |
US5160987A (en) * | 1989-10-26 | 1992-11-03 | International Business Machines Corporation | Three-dimensional semiconductor structures formed from planar layers |
JP2524842B2 (ja) * | 1989-11-08 | 1996-08-14 | 三菱電機株式会社 | 半導体記憶装置 |
JPH03173176A (ja) * | 1989-11-30 | 1991-07-26 | Sharp Corp | 半導体記憶装置 |
US5006481A (en) * | 1989-11-30 | 1991-04-09 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked capacitor DRAM cell |
KR920010204B1 (ko) * | 1989-12-02 | 1992-11-21 | 삼성전자 주식회사 | 초고집적 디램셀 및 그 제조방법 |
EP0764974B1 (de) * | 1990-03-08 | 2006-06-14 | Fujitsu Limited | Schichtstruktur mit Kontaktöffnung und Verfahren zur Herstellung derselben |
JP2524863B2 (ja) * | 1990-05-02 | 1996-08-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2504606B2 (ja) * | 1990-05-18 | 1996-06-05 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
KR930000718B1 (ko) * | 1990-05-21 | 1993-01-30 | 삼성전자 주식회사 | 반도체장치의 제조방법 |
KR920009748B1 (ko) * | 1990-05-31 | 1992-10-22 | 삼성전자 주식회사 | 적층형 캐패시터셀의 구조 및 제조방법 |
KR930002292B1 (ko) * | 1990-06-02 | 1993-03-29 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
US5005103A (en) * | 1990-06-05 | 1991-04-02 | Samsung Electronics Co., Ltd. | Method of manufacturing folded capacitors in semiconductor and folded capacitors fabricated thereby |
KR920001716A (ko) * | 1990-06-05 | 1992-01-30 | 김광호 | 디램셀의 적층형 캐패시터의 구조 및 제조방법 |
KR930007192B1 (ko) * | 1990-06-29 | 1993-07-31 | 삼성전자 주식회사 | 디램셀의 적층형캐패시터 및 제조방법 |
JPH0496270A (ja) * | 1990-08-03 | 1992-03-27 | Sharp Corp | 半導体装置の製造方法 |
KR930007194B1 (ko) * | 1990-08-14 | 1993-07-31 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
DE69119354T2 (de) * | 1990-10-29 | 1996-09-19 | Nec Corp | DRAM Zelle mit Stapelkondensator |
KR920010908A (ko) * | 1990-11-01 | 1992-06-27 | 김광호 | 개선된 핀 구조를 갖는 디램 셀 및 그의 제조방법 |
US5155057A (en) * | 1990-11-05 | 1992-10-13 | Micron Technology, Inc. | Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line |
US5049517A (en) * | 1990-11-07 | 1991-09-17 | Micron Technology, Inc. | Method for formation of a stacked capacitor |
JP3344485B2 (ja) * | 1990-11-09 | 2002-11-11 | 富士通株式会社 | 半導体装置の製造方法 |
KR930009594B1 (ko) * | 1991-01-30 | 1993-10-07 | 삼성전자 주식회사 | 고집적 반도체 메모리장치 및 그 제조방법 |
KR920017248A (ko) * | 1991-02-18 | 1992-09-26 | 문정환 | 반도체 메모리 소자의 커패시터 제조방법 |
US5053351A (en) * | 1991-03-19 | 1991-10-01 | Micron Technology, Inc. | Method of making stacked E-cell capacitor DRAM cell |
KR930010081B1 (ko) * | 1991-05-24 | 1993-10-14 | 현대전자산업 주식회사 | 2중 적층캐패시터 구조를 갖는 반도체 기억장치 및 그 제조방법 |
US5223448A (en) * | 1991-07-18 | 1993-06-29 | Industrial Technology Research Institute | Method for producing a layered capacitor structure for a dynamic random access memory device |
EP0528183B1 (de) * | 1991-07-25 | 1997-10-08 | Fujitsu Limited | Verfahren zur Herstellung eines dynamischen RAM mit Kondensator mit gestapelter Flossenstruktur und reduzierter Flossendicke |
TW301782B (de) * | 1991-08-16 | 1997-04-01 | Gold Star Electronics | |
TW243541B (de) * | 1991-08-31 | 1995-03-21 | Samsung Electronics Co Ltd | |
US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
US5262662A (en) * | 1991-10-31 | 1993-11-16 | Micron Technology, Inc. | Storage node capacitor having tungsten and etched tin storage node capacitor plate |
US5168073A (en) * | 1991-10-31 | 1992-12-01 | Micron Technology, Inc. | Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate |
JPH05198768A (ja) * | 1992-01-21 | 1993-08-06 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US5840605A (en) * | 1993-04-19 | 1998-11-24 | Industrial Technology Research Institute | Dual layer polysilicon capacitor node DRAM process |
JP3176758B2 (ja) * | 1993-06-04 | 2001-06-18 | 富士通株式会社 | 半導体装置の製造方法 |
KR0131744B1 (ko) * | 1993-12-28 | 1998-04-15 | 김주용 | 반도체 소자의 캐패시터 제조방법 |
US5436187A (en) * | 1994-02-22 | 1995-07-25 | Nec Corporation | Process for fabricating a semiconductor memory device including a capacitor having a cylindrical storage node electrode |
US5436186A (en) * | 1994-04-22 | 1995-07-25 | United Microelectronics Corporation | Process for fabricating a stacked capacitor |
US5460999A (en) * | 1994-06-06 | 1995-10-24 | United Microelectronics Corporation | Method for making fin-shaped stack capacitors on DRAM chips |
US6744091B1 (en) * | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
DE19527023C1 (de) * | 1995-07-24 | 1997-02-27 | Siemens Ag | Verfahren zur Herstellung eines Kondensators in einer Halbleiteranordnung |
US5536673A (en) * | 1995-07-26 | 1996-07-16 | United Microelectronics Corporation | Method for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitance |
US5807782A (en) * | 1995-09-25 | 1998-09-15 | Vanguard International Semiconductor Corporation | Method of manufacturing a stacked capacitor having a fin-shaped storage electrode on a dynamic random access memory cell |
US5661064A (en) * | 1995-11-13 | 1997-08-26 | Micron Technology, Inc. | Method of forming a capacitor having container members |
US5637523A (en) * | 1995-11-20 | 1997-06-10 | Micron Technology, Inc. | Method of forming a capacitor and a capacitor construction |
US6218237B1 (en) | 1996-01-03 | 2001-04-17 | Micron Technology, Inc. | Method of forming a capacitor |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
TW312829B (en) * | 1996-08-16 | 1997-08-11 | United Microelectronics Corp | Semiconductor memory device with capacitor(6) |
US5677223A (en) * | 1996-10-07 | 1997-10-14 | Vanguard International Semiconductor Corporation | Method for manufacturing a DRAM with reduced cell area |
US5763304A (en) * | 1996-10-07 | 1998-06-09 | Vanguard International Semiconductor Corporation | Method for manufacturing a capacitor with chemical mechanical polishing |
US5843822A (en) * | 1997-02-05 | 1998-12-01 | Mosel Vitelic Inc. | Double-side corrugated cylindrical capacitor structure of high density DRAMs |
US6027969A (en) * | 1998-06-04 | 2000-02-22 | Taiwan Semiconductor Manufacturing Company | Capacitor structure for a dynamic random access memory cell |
US6214687B1 (en) | 1999-02-17 | 2001-04-10 | Micron Technology, Inc. | Method of forming a capacitor and a capacitor construction |
TW413932B (en) | 1999-03-05 | 2000-12-01 | Nanya Plastics Corp | Manufacturing method of crown-type capacitor structure |
TW415084B (en) * | 1999-03-05 | 2000-12-11 | Nanya Technology Corp | Fabrication method of crown-shaped capacitor structure |
KR100319560B1 (ko) | 1999-05-03 | 2002-01-05 | 윤종용 | 물리 화학적 연마(cmp) 저지막을 사용한 커패시터 스토리지 전극 형성 방법 |
FR2800197B1 (fr) * | 1999-10-25 | 2003-02-07 | St Microelectronics Sa | Procede de definition de deux zones autoalignees a la surface superieure d'un substrat |
US6689668B1 (en) | 2000-08-31 | 2004-02-10 | Samsung Austin Semiconductor, L.P. | Methods to improve density and uniformity of hemispherical grain silicon layers |
US6403455B1 (en) | 2000-08-31 | 2002-06-11 | Samsung Austin Semiconductor, L.P. | Methods of fabricating a memory device |
KR101934426B1 (ko) * | 2012-11-26 | 2019-01-03 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55154762A (en) * | 1979-05-22 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory |
JPS568871A (en) * | 1979-07-04 | 1981-01-29 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS5658255A (en) * | 1979-10-17 | 1981-05-21 | Oki Electric Ind Co Ltd | Mos type semiconductor memory device |
JPS5824022B2 (ja) * | 1979-10-17 | 1983-05-18 | 沖電気工業株式会社 | Mos型半導体記憶装置の製造方法 |
JPS5961072A (ja) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
JPS59104156A (ja) * | 1982-12-07 | 1984-06-15 | Toshiba Corp | 多層キヤパシタ |
JPS59104161A (ja) * | 1982-12-07 | 1984-06-15 | Nec Corp | 1トランジスタ型半導体記憶装置 |
US4649406A (en) * | 1982-12-20 | 1987-03-10 | Fujitsu Limited | Semiconductor memory device having stacked capacitor-type memory cells |
JPS59231851A (ja) * | 1983-06-14 | 1984-12-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリセル |
JPS609154A (ja) * | 1983-06-29 | 1985-01-18 | Hitachi Ltd | 半導体メモリとその製造方法 |
JPS6074470A (ja) * | 1983-09-29 | 1985-04-26 | Fujitsu Ltd | 半導体装置 |
JPS6195563A (ja) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | 半導体記憶装置 |
JPH0682783B2 (ja) * | 1985-03-29 | 1994-10-19 | 三菱電機株式会社 | 容量およびその製造方法 |
JPS6248062A (ja) * | 1985-08-28 | 1987-03-02 | Sony Corp | メモリセル |
JPS62128169A (ja) * | 1985-11-28 | 1987-06-10 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JPH0736437B2 (ja) * | 1985-11-29 | 1995-04-19 | 株式会社日立製作所 | 半導体メモリの製造方法 |
JPH0815207B2 (ja) * | 1986-02-04 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
JPS62286269A (ja) * | 1986-06-04 | 1987-12-12 | Fujitsu Ltd | Dramセル及びその製造方法 |
US4855801A (en) * | 1986-08-22 | 1989-08-08 | Siemens Aktiengesellschaft | Transistor varactor for dynamics semiconductor storage means |
JPH0728674B2 (ja) * | 1987-07-06 | 1995-04-05 | 田辺製薬株式会社 | アユの体表橙黄色増強剤 |
JPH0666437B2 (ja) * | 1987-11-17 | 1994-08-24 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
-
1988
- 1988-06-16 DE DE3856143T patent/DE3856143T2/de not_active Expired - Lifetime
- 1988-06-16 EP EP96114835A patent/EP0750347B1/de not_active Expired - Lifetime
- 1988-06-16 DE DE3856528T patent/DE3856528T2/de not_active Expired - Lifetime
- 1988-06-16 EP EP88109701A patent/EP0295709B1/de not_active Expired - Lifetime
- 1988-06-17 KR KR1019880007336A patent/KR910002815B1/ko not_active IP Right Cessation
-
1990
- 1990-03-16 US US07/496,107 patent/US4974040A/en not_active Expired - Lifetime
- 1990-08-01 US US07/561,424 patent/US5021357A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0295709A3 (de) | 1990-12-05 |
DE3856143T2 (de) | 1998-10-29 |
KR910002815B1 (ko) | 1991-05-04 |
US5021357A (en) | 1991-06-04 |
DE3856528D1 (de) | 2002-06-13 |
EP0750347A1 (de) | 1996-12-27 |
DE3856528T2 (de) | 2002-12-05 |
EP0295709A2 (de) | 1988-12-21 |
EP0750347B1 (de) | 2002-05-08 |
EP0295709B1 (de) | 1998-03-11 |
US4974040A (en) | 1990-11-27 |
KR890001189A (ko) | 1989-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3856143T2 (de) | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff | |
DE3884698D1 (de) | Verfahren zum Herstellen einer Speicherzelle. | |
KR890008991A (ko) | 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법 | |
EP0317199A3 (en) | Layer structure of a memory cell for a dynamic random access memory device and method for producing the same | |
DE3174982D1 (en) | Method of forming integrated mosfet dynamic random access memories | |
DE3579174D1 (de) | Verfahren zum herstellen einer halbleiterspeicherstruktur und halbleiterspeicherstruktur. | |
DE69015135T2 (de) | Verfahren zum Herstellen eines Kondensators für DRAM-Zelle. | |
DE68911621D1 (de) | Verfahren zum Herstellen einer Einrichtung. | |
GB2187006B (en) | Random access memory apparatus | |
GB2138230B (en) | Dynamic random access memory arrangements | |
EP0278155A3 (en) | Dynamic random access memory | |
JPS5790974A (en) | Method of producing dynamic ram-1-transistor memory cell | |
EP0142376A3 (en) | Dynamic random access memory | |
JPS567300A (en) | Method of measuring access time of memory | |
GB2136256B (en) | Method of refreshing of dynamic memory | |
DE3585731D1 (de) | Dram-zelle und verfahren. | |
ES557501A0 (es) | Un metodo de preparar un copolimero al azar | |
GB2231718B (en) | A dynamic random access memory cell and method of making the same | |
DE69018839T2 (de) | Verfahren zur Herstellung einer dynamischen Speicherzelle mit wahlfreiem Zugriff. | |
DE58909777D1 (de) | Verfahren zum Herstellen eines Isoliercontainers | |
ES557502A0 (es) | Un metodo de preparar un copolimero al azar | |
DE69131638D1 (de) | Verfahren zum Herstellen einer Halbleiterspeicheranordnung mit erhöhter Speicherzellenkapazität | |
GB2204756B (en) | Dynamic random access memory | |
DE3279351D1 (en) | A method of testing memory | |
DE68917840T2 (de) | Verfahren zum Herstellen einer dielektrischen Schicht. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |