DE3884698D1 - Verfahren zum Herstellen einer Speicherzelle. - Google Patents
Verfahren zum Herstellen einer Speicherzelle.Info
- Publication number
- DE3884698D1 DE3884698D1 DE88401777T DE3884698T DE3884698D1 DE 3884698 D1 DE3884698 D1 DE 3884698D1 DE 88401777 T DE88401777 T DE 88401777T DE 3884698 T DE3884698 T DE 3884698T DE 3884698 D1 DE3884698 D1 DE 3884698D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- memory cell
- cell
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8709844A FR2618011B1 (fr) | 1987-07-10 | 1987-07-10 | Procede de fabrication d'une cellule de memoire |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3884698D1 true DE3884698D1 (de) | 1993-11-11 |
DE3884698T2 DE3884698T2 (de) | 1994-05-05 |
Family
ID=9353075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88401777T Expired - Lifetime DE3884698T2 (de) | 1987-07-10 | 1988-07-07 | Verfahren zum Herstellen einer Speicherzelle. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4851365A (de) |
EP (1) | EP0299853B1 (de) |
JP (1) | JP2588486B2 (de) |
DE (1) | DE3884698T2 (de) |
FR (1) | FR2618011B1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3059442B2 (ja) | 1988-11-09 | 2000-07-04 | 株式会社日立製作所 | 半導体記憶装置 |
US4980309A (en) * | 1987-11-30 | 1990-12-25 | Texas Instruments, Incorporated | Method of making high density EEPROM |
US5677867A (en) * | 1991-06-12 | 1997-10-14 | Hazani; Emanuel | Memory with isolatable expandable bit lines |
US5304505A (en) * | 1989-03-22 | 1994-04-19 | Emanuel Hazani | Process for EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells |
FR2634318B1 (fr) * | 1988-07-13 | 1992-02-21 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire integree |
FR2635410B1 (fr) * | 1988-08-11 | 1991-08-02 | Sgs Thomson Microelectronics | Memoire de type eprom a haute densite d'integration avec une organisation en damier et un facteur de couplage ameliore et procede de fabrication |
US4945067A (en) * | 1988-09-16 | 1990-07-31 | Xerox Corporation | Intra-gate offset high voltage thin film transistor with misalignment immunity and method of its fabrication |
US5336628A (en) * | 1988-10-25 | 1994-08-09 | Commissariat A L'energie Atomique | Method for fabricating semiconductor memory device |
US5238855A (en) * | 1988-11-10 | 1993-08-24 | Texas Instruments Incorporated | Cross-point contact-free array with a high-density floating-gate structure |
US5200350A (en) * | 1988-11-10 | 1993-04-06 | Texas Instruments Incorporated | Floating-gate memory array with silicided buried bitlines |
JPH0783122B2 (ja) * | 1988-12-01 | 1995-09-06 | 富士電機株式会社 | 半導体装置の製造方法 |
FR2642900B1 (fr) * | 1989-01-17 | 1991-05-10 | Sgs Thomson Microelectronics | Procede de fabrication de circuits integres a transistors de memoire eprom et a transistors logiques |
US5070032A (en) * | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
US5149667A (en) * | 1989-05-31 | 1992-09-22 | Samsung Electronics Co., Ltd. | Mask ROM device having double polycrystalline silicone and process for producing the same |
JPH0783066B2 (ja) * | 1989-08-11 | 1995-09-06 | 株式会社東芝 | 半導体装置の製造方法 |
FR2655194B1 (fr) * | 1989-11-28 | 1992-04-10 | Sgs Thomson Microelectronics | Procede de fabrication de circuits integres constituant des memoires eprom. |
US5215933A (en) * | 1990-05-11 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of manufacturing nonvolatile semiconductor memory device |
JP2672184B2 (ja) * | 1990-08-27 | 1997-11-05 | シャープ株式会社 | 半導体装置の製造方法 |
US5343063A (en) * | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5202272A (en) * | 1991-03-25 | 1993-04-13 | International Business Machines Corporation | Field effect transistor formed with deep-submicron gate |
US5240870A (en) * | 1991-04-18 | 1993-08-31 | National Semiconductor Corporation | Stacked gate process flow for cross-point EPROM with internal access transistor |
FR2677481B1 (fr) * | 1991-06-07 | 1993-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue. |
US5120668A (en) * | 1991-07-10 | 1992-06-09 | Ibm Corporation | Method of forming an inverse T-gate FET transistor |
US5397726A (en) * | 1992-02-04 | 1995-03-14 | National Semiconductor Corporation | Segment-erasable flash EPROM |
US5379253A (en) * | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
US5246874A (en) * | 1992-06-02 | 1993-09-21 | National Semiconductor Corporation | Method of making fast access AMG EPROM |
KR950011556B1 (ko) * | 1992-07-03 | 1995-10-06 | 현대전자산업주식회사 | 반도체 접속장치 형성방법 |
US5376578A (en) * | 1993-12-17 | 1994-12-27 | International Business Machines Corporation | Method of fabricating a semiconductor device with raised diffusions and isolation |
KR970009617B1 (en) * | 1993-12-31 | 1997-06-14 | Hyundai Electronics Ind | Contact forming method of semiconductor device |
KR0129125B1 (ko) * | 1994-01-21 | 1998-04-07 | 문정환 | 반도체 소자의 ldd mosfet 제조방법 |
WO1995022837A1 (en) * | 1994-02-17 | 1995-08-24 | National Semiconductor Corporation | A method for reducing the spacing between the horizontally-adjacent floating gates of a flash eprom array |
US5617328A (en) * | 1994-05-23 | 1997-04-01 | Winbond Electronics Corporation | Automatic code pattern generator for repetitious patterns in an integrated circuit layout |
JPH08321545A (ja) * | 1995-05-24 | 1996-12-03 | Yamaha Corp | 配線形成法 |
DE19548058C2 (de) * | 1995-12-21 | 1997-11-20 | Siemens Ag | Verfahren zur Herstellung eines MOS-Transistors |
US5923981A (en) * | 1996-12-31 | 1999-07-13 | Intel Corporation | Cascading transistor gate and method for fabricating the same |
EP1071134A1 (de) | 1999-07-22 | 2001-01-24 | STMicroelectronics S.r.l. | Verfahren zur Herstellung eines Halbleiterbauelementes mit EEPROM-Speicherzellen unter Kontrolle der Abmessungen der Floating-Gate-Gebiete |
US6124167A (en) * | 1999-08-06 | 2000-09-26 | Micron Technology, Inc. | Method for forming an etch mask during the manufacture of a semiconductor device |
KR100437470B1 (ko) * | 2001-01-31 | 2004-06-23 | 삼성전자주식회사 | 플래쉬 메모리 셀을 갖는 반도체 장치 및 그 제조 방법 |
KR100368594B1 (ko) * | 2001-02-23 | 2003-01-24 | 삼성전자 주식회사 | 스플릿 게이트형 플래쉬 메모리소자 |
KR100470388B1 (ko) * | 2002-05-03 | 2005-02-07 | 주식회사 하이닉스반도체 | 독립적이고 비대칭적인 소스/드레인을 포함하는 디램 셀및 그 형성 방법 |
US6583009B1 (en) * | 2002-06-24 | 2003-06-24 | Advanced Micro Devices, Inc. | Innovative narrow gate formation for floating gate flash technology |
US20060157773A1 (en) * | 2005-01-14 | 2006-07-20 | Yu Andy T | Non-volatile electrically alterable memory cell for storing multiple data and manufacturing thereof |
US20070166971A1 (en) * | 2006-01-17 | 2007-07-19 | Atmel Corporation | Manufacturing of silicon structures smaller than optical resolution limits |
EP2089898A1 (de) * | 2006-11-06 | 2009-08-19 | Nxp B.V. | Verfahren zur herstellung eines fet-gates |
KR100854504B1 (ko) * | 2007-03-12 | 2008-08-26 | 삼성전자주식회사 | 플래쉬 메모리 소자의 제조방법 및 그에 의해 제조된플래쉬 메모리 소자 |
US8575683B1 (en) * | 2012-05-16 | 2013-11-05 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
US9023726B1 (en) | 2013-11-18 | 2015-05-05 | United Microelectronics Corp. | Method of fabricating semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53124084A (en) * | 1977-04-06 | 1978-10-30 | Hitachi Ltd | Semiconductor memory device containing floating type poly silicon layer and its manufacture |
US4184207A (en) * | 1978-01-27 | 1980-01-15 | Texas Instruments Incorporated | High density floating gate electrically programmable ROM |
US4493057A (en) * | 1980-01-07 | 1985-01-08 | Texas Instruments Incorporated | Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like |
US4312680A (en) * | 1980-03-31 | 1982-01-26 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4400865A (en) * | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4378627A (en) * | 1980-07-08 | 1983-04-05 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
JPS5836508B2 (ja) * | 1980-12-25 | 1983-08-09 | 富士通株式会社 | 半導体装置の製造方法 |
NL188432C (nl) * | 1980-12-26 | 1992-06-16 | Nippon Telegraph & Telephone | Werkwijze voor het vervaardigen van een mosfet. |
US4419809A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
JPS60182171A (ja) * | 1984-02-29 | 1985-09-17 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6182482A (ja) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | GaAs電界効果トランジスタの製造方法 |
FR2593327B1 (fr) * | 1986-01-23 | 1988-10-28 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces utilisant deux ou trois niveaux de masquage |
FR2603128B1 (fr) * | 1986-08-21 | 1988-11-10 | Commissariat Energie Atomique | Cellule de memoire eprom et son procede de fabrication |
-
1987
- 1987-07-10 FR FR8709844A patent/FR2618011B1/fr not_active Expired - Lifetime
-
1988
- 1988-07-07 EP EP88401777A patent/EP0299853B1/de not_active Expired - Lifetime
- 1988-07-07 DE DE88401777T patent/DE3884698T2/de not_active Expired - Lifetime
- 1988-07-08 US US07/216,869 patent/US4851365A/en not_active Expired - Lifetime
- 1988-07-11 JP JP63172521A patent/JP2588486B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2618011A1 (fr) | 1989-01-13 |
US4851365A (en) | 1989-07-25 |
EP0299853A1 (de) | 1989-01-18 |
JPS6459870A (en) | 1989-03-07 |
FR2618011B1 (fr) | 1992-09-18 |
DE3884698T2 (de) | 1994-05-05 |
JP2588486B2 (ja) | 1997-03-05 |
EP0299853B1 (de) | 1993-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |