DE19811568B4 - Halbleitervorrichtung mit einem Leistungshalbleiterelement - Google Patents

Halbleitervorrichtung mit einem Leistungshalbleiterelement Download PDF

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Publication number
DE19811568B4
DE19811568B4 DE19811568A DE19811568A DE19811568B4 DE 19811568 B4 DE19811568 B4 DE 19811568B4 DE 19811568 A DE19811568 A DE 19811568A DE 19811568 A DE19811568 A DE 19811568A DE 19811568 B4 DE19811568 B4 DE 19811568B4
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DE
Germany
Prior art keywords
conductivity type
type
layer
base layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19811568A
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German (de)
English (en)
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DE19811568A1 (de
Inventor
Masanori Tsukuda
Takashi Yokosuka Shinohe
Masakazu Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE19811568A1 publication Critical patent/DE19811568A1/de
Application granted granted Critical
Publication of DE19811568B4 publication Critical patent/DE19811568B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE19811568A 1997-03-18 1998-03-17 Halbleitervorrichtung mit einem Leistungshalbleiterelement Expired - Fee Related DE19811568B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9-065151 1997-03-18
JP6515197 1997-03-18
JP05074598A JP4167313B2 (ja) 1997-03-18 1998-03-03 高耐圧電力用半導体装置
JP10-050745 1998-03-03

Publications (2)

Publication Number Publication Date
DE19811568A1 DE19811568A1 (de) 1998-09-24
DE19811568B4 true DE19811568B4 (de) 2005-10-06

Family

ID=26391203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19811568A Expired - Fee Related DE19811568B4 (de) 1997-03-18 1998-03-17 Halbleitervorrichtung mit einem Leistungshalbleiterelement

Country Status (3)

Country Link
US (1) US6054748A (enExample)
JP (1) JP4167313B2 (enExample)
DE (1) DE19811568B4 (enExample)

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JP3545633B2 (ja) * 1999-03-11 2004-07-21 株式会社東芝 高耐圧型半導体装置及びその製造方法
JP4862207B2 (ja) * 1999-11-26 2012-01-25 富士電機株式会社 半導体装置の製造方法
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
JP2002026307A (ja) * 2000-07-05 2002-01-25 Sansha Electric Mfg Co Ltd 電力用半導体素子の製造方法
JP4736180B2 (ja) 2000-11-29 2011-07-27 株式会社デンソー 半導体装置およびその製造方法
DE10147307A1 (de) * 2001-09-26 2003-04-24 Infineon Technologies Ag IGBT mit integriertem Freilaufelement
DE10154658B4 (de) * 2001-11-07 2008-11-06 X-Fab Semiconductor Foundries Ag Integrierter Leistungsschaltkreis mit verbessertem elektrischen und thermischen Durchgangswiderstand und Verfahren zu seiner Herstellung
AU2002351686B2 (en) * 2002-01-15 2008-04-10 Robert Bosch Gmbh Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement
JP2003303966A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
DE10262169B4 (de) * 2002-04-19 2016-11-03 Infineon Technologies Ag Halbleiterbauelement und integrierte Schaltungsanordnung damit
US7169634B2 (en) * 2003-01-15 2007-01-30 Advanced Power Technology, Inc. Design and fabrication of rugged FRED
WO2004066391A1 (ja) * 2003-01-20 2004-08-05 Mitsubishi Denki Kabushiki Kaisha 半導体装置
JP2004281949A (ja) * 2003-03-19 2004-10-07 Nippon Inter Electronics Corp 半導体装置及びその製造方法
JP2004342718A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体装置及びコンバータ
EP1723680A1 (de) * 2004-03-11 2006-11-22 Siemens Aktiengesellschaft Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung
JP4815885B2 (ja) * 2005-06-09 2011-11-16 トヨタ自動車株式会社 半導体装置の制御方法
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JP2008066694A (ja) * 2006-03-16 2008-03-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
EP1873837B1 (en) * 2006-06-28 2013-03-27 STMicroelectronics Srl Semiconductor power device having an edge-termination structure and manufacturing method thereof
JP2008103529A (ja) * 2006-10-19 2008-05-01 Toyota Central R&D Labs Inc 半導体装置
JP4973418B2 (ja) 2007-09-26 2012-07-11 サンケン電気株式会社 半導体装置
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
EP2086012A1 (en) * 2007-12-19 2009-08-05 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
EP2081233A1 (de) * 2007-12-21 2009-07-22 SEMIKRON Elektronik GmbH & Co. KG Leistungsdiode mit grabenförmigen Anodenkontaktbereich
JP4544313B2 (ja) * 2008-02-19 2010-09-15 トヨタ自動車株式会社 Ｉｇｂｔとその製造方法
TW201015718A (en) * 2008-10-03 2010-04-16 Sanyo Electric Co Semiconductor device and method for manufacturing the same
WO2010046997A1 (ja) * 2008-10-24 2010-04-29 株式会社アドバンテスト 電子デバイスおよび製造方法
US8507352B2 (en) 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
JP4947111B2 (ja) * 2008-12-10 2012-06-06 株式会社デンソー 半導体装置の製造方法
WO2011027474A1 (ja) 2009-09-07 2011-03-10 トヨタ自動車株式会社 ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
JP5409247B2 (ja) * 2009-10-13 2014-02-05 三菱電機株式会社 半導体装置および半導体装置の製造方法
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CN102754213B (zh) * 2010-02-23 2015-08-05 菅原良孝 半导体装置
US8786024B2 (en) 2010-04-15 2014-07-22 Yoshitaka Sugawara Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
JP2012023199A (ja) * 2010-07-14 2012-02-02 Rohm Co Ltd ショットキバリアダイオード
JP5434961B2 (ja) * 2010-08-04 2014-03-05 株式会社デンソー 横型ダイオードを有する半導体装置
JP5605073B2 (ja) * 2010-08-17 2014-10-15 株式会社デンソー 半導体装置
JP5606240B2 (ja) 2010-09-22 2014-10-15 三菱電機株式会社 半導体装置
JP5547022B2 (ja) * 2010-10-01 2014-07-09 トヨタ自動車株式会社 半導体装置
JP5708124B2 (ja) * 2011-03-25 2015-04-30 三菱電機株式会社 半導体装置
JP5995435B2 (ja) * 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
JP6284565B2 (ja) * 2011-08-02 2018-02-28 ローム株式会社 半導体装置およびその製造方法
US9379224B2 (en) 2011-08-30 2016-06-28 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5733417B2 (ja) * 2011-11-15 2015-06-10 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5756041B2 (ja) * 2012-03-06 2015-07-29 株式会社豊田中央研究所 半導体装置
CN104247025B (zh) 2012-04-25 2017-05-03 Abb 瑞士有限公司 具有高发射极栅极电容的绝缘栅双极晶体管
CN104285298A (zh) * 2012-09-13 2015-01-14 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6082314B2 (ja) * 2012-11-06 2017-02-15 株式会社東芝 半導体装置
JP6150542B2 (ja) * 2013-02-04 2017-06-21 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP2014187080A (ja) * 2013-03-22 2014-10-02 Panasonic Corp 半導体素子、半導体装置及び複合モジュール
JP2014204038A (ja) 2013-04-08 2014-10-27 三菱電機株式会社 半導体装置及びその製造方法
CN104253151B (zh) 2013-06-27 2017-06-27 无锡华润上华半导体有限公司 场截止型反向导通绝缘栅双极型晶体管及其制造方法
JP6127820B2 (ja) * 2013-08-02 2017-05-17 トヨタ自動車株式会社 半導体装置
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JP6319151B2 (ja) * 2015-03-23 2018-05-09 豊田合成株式会社 半導体装置および半導体装置の製造方法
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JP6540563B2 (ja) * 2016-03-15 2019-07-10 三菱電機株式会社 半導体装置
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CN110660658B (zh) * 2018-06-28 2022-02-18 上海先进半导体制造有限公司 Vdmos及其制造方法
JP6935373B2 (ja) 2018-08-21 2021-09-15 株式会社東芝 半導体装置
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CN109411528B (zh) * 2018-10-26 2020-12-22 珠海格力电器股份有限公司 一种电阻等效二极管结构
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JP7647042B2 (ja) * 2020-09-17 2025-03-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7609010B2 (ja) 2021-08-16 2025-01-07 三菱電機株式会社 半導体装置
JP7742782B2 (ja) * 2022-02-01 2025-09-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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EP0726603A2 (en) * 1995-02-10 1996-08-14 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier

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EP0726603A2 (en) * 1995-02-10 1996-08-14 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier

Also Published As

Publication number Publication date
DE19811568A1 (de) 1998-09-24
US6054748A (en) 2000-04-25
JP4167313B2 (ja) 2008-10-15
JPH10321877A (ja) 1998-12-04

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