JP4167313B2 - 高耐圧電力用半導体装置 - Google Patents

高耐圧電力用半導体装置 Download PDF

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Publication number
JP4167313B2
JP4167313B2 JP05074598A JP5074598A JP4167313B2 JP 4167313 B2 JP4167313 B2 JP 4167313B2 JP 05074598 A JP05074598 A JP 05074598A JP 5074598 A JP5074598 A JP 5074598A JP 4167313 B2 JP4167313 B2 JP 4167313B2
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Japan
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type
layer
semiconductor device
region
recess
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Expired - Fee Related
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JP05074598A
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English (en)
Japanese (ja)
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JPH10321877A (ja
JPH10321877A5 (enExample
Inventor
正則 附田
孝 四戸
正一 山口
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Toshiba Corp
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Toshiba Corp
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Priority to JP05074598A priority Critical patent/JP4167313B2/ja
Priority to US09/041,799 priority patent/US6054748A/en
Priority to DE19811568A priority patent/DE19811568B4/de
Publication of JPH10321877A publication Critical patent/JPH10321877A/ja
Publication of JPH10321877A5 publication Critical patent/JPH10321877A5/ja
Application granted granted Critical
Publication of JP4167313B2 publication Critical patent/JP4167313B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP05074598A 1997-03-18 1998-03-03 高耐圧電力用半導体装置 Expired - Fee Related JP4167313B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP05074598A JP4167313B2 (ja) 1997-03-18 1998-03-03 高耐圧電力用半導体装置
US09/041,799 US6054748A (en) 1997-03-18 1998-03-13 High voltage semiconductor power device
DE19811568A DE19811568B4 (de) 1997-03-18 1998-03-17 Halbleitervorrichtung mit einem Leistungshalbleiterelement

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6515197 1997-03-18
JP9-65151 1997-03-18
JP05074598A JP4167313B2 (ja) 1997-03-18 1998-03-03 高耐圧電力用半導体装置

Publications (3)

Publication Number Publication Date
JPH10321877A JPH10321877A (ja) 1998-12-04
JPH10321877A5 JPH10321877A5 (enExample) 2005-04-21
JP4167313B2 true JP4167313B2 (ja) 2008-10-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP05074598A Expired - Fee Related JP4167313B2 (ja) 1997-03-18 1998-03-03 高耐圧電力用半導体装置

Country Status (3)

Country Link
US (1) US6054748A (enExample)
JP (1) JP4167313B2 (enExample)
DE (1) DE19811568B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700217B2 (en) 2018-08-21 2020-06-30 Kabushiki Kaisha Toshiba Semiconductor device

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JP3545633B2 (ja) * 1999-03-11 2004-07-21 株式会社東芝 高耐圧型半導体装置及びその製造方法
JP4862207B2 (ja) * 1999-11-26 2012-01-25 富士電機株式会社 半導体装置の製造方法
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DE10262169B4 (de) * 2002-04-19 2016-11-03 Infineon Technologies Ag Halbleiterbauelement und integrierte Schaltungsanordnung damit
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JP2004342718A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体装置及びコンバータ
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JP4973418B2 (ja) 2007-09-26 2012-07-11 サンケン電気株式会社 半導体装置
EP2073271A1 (en) * 2007-12-19 2009-06-24 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
EP2086012A1 (en) * 2007-12-19 2009-08-05 ABB Technology AG Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
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CN102754213B (zh) * 2010-02-23 2015-08-05 菅原良孝 半导体装置
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JP5605073B2 (ja) * 2010-08-17 2014-10-15 株式会社デンソー 半導体装置
JP5606240B2 (ja) 2010-09-22 2014-10-15 三菱電機株式会社 半導体装置
JP5547022B2 (ja) * 2010-10-01 2014-07-09 トヨタ自動車株式会社 半導体装置
JP5708124B2 (ja) * 2011-03-25 2015-04-30 三菱電機株式会社 半導体装置
JP5995435B2 (ja) * 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
DE19811568A1 (de) 1998-09-24
DE19811568B4 (de) 2005-10-06
US6054748A (en) 2000-04-25
JPH10321877A (ja) 1998-12-04

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