CN110824800B - 显示设备 - Google Patents
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- CN110824800B CN110824800B CN201911225794.0A CN201911225794A CN110824800B CN 110824800 B CN110824800 B CN 110824800B CN 201911225794 A CN201911225794 A CN 201911225794A CN 110824800 B CN110824800 B CN 110824800B
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- oxide semiconductor
- layer
- transistor
- insulating layer
- film
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- 239000004065 semiconductor Substances 0.000 claims abstract description 513
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 58
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- 239000011701 zinc Substances 0.000 claims description 11
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Classifications
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/10—Special adaptations of display systems for operation with variable images
- G09G2320/103—Detection of image changes, e.g. determination of an index representative of the image change
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/022—Power management, e.g. power saving in absence of operation, e.g. no data being entered during a predetermined time
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/027—Arrangements or methods related to powering off a display
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
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Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Shift Register Type Memory (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009238916 | 2009-10-16 | ||
| JP2009-238916 | 2009-10-16 | ||
| JP2009273913 | 2009-12-01 | ||
| JP2009-273913 | 2009-12-01 | ||
| JP2009-278999 | 2009-12-08 | ||
| JP2009278999 | 2009-12-08 | ||
| CN2010800469635A CN102576518A (zh) | 2009-10-16 | 2010-09-28 | 液晶显示设备以及具有其的电子装置 |
| PCT/JP2010/067319 WO2011046032A1 (en) | 2009-10-16 | 2010-09-28 | Liquid crystal display device and electronic apparatus having the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800469635A Division CN102576518A (zh) | 2009-10-16 | 2010-09-28 | 液晶显示设备以及具有其的电子装置 |
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| Publication Number | Publication Date |
|---|---|
| CN110824800A CN110824800A (zh) | 2020-02-21 |
| CN110824800B true CN110824800B (zh) | 2022-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310341421.XA Active CN116343705B (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN2010800469635A Pending CN102576518A (zh) | 2009-10-16 | 2010-09-28 | 液晶显示设备以及具有其的电子装置 |
| CN201911225794.0A Active CN110824800B (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN202310739461.XA Pending CN116722019A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN201911225746.1A Pending CN110908203A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN201610843907.3A Pending CN106200185A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310341421.XA Active CN116343705B (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN2010800469635A Pending CN102576518A (zh) | 2009-10-16 | 2010-09-28 | 液晶显示设备以及具有其的电子装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310739461.XA Pending CN116722019A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN201911225746.1A Pending CN110908203A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
| CN201610843907.3A Pending CN106200185A (zh) | 2009-10-16 | 2010-09-28 | 显示设备 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10061172B2 (enExample) |
| EP (2) | EP3244394A1 (enExample) |
| JP (13) | JP5882572B2 (enExample) |
| KR (8) | KR101933841B1 (enExample) |
| CN (6) | CN116343705B (enExample) |
| TW (2) | TWI604428B (enExample) |
| WO (1) | WO2011046032A1 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| KR102329497B1 (ko) * | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| WO2011065230A1 (en) | 2009-11-30 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, method for driving the same, and electronic device including the same |
| KR101840623B1 (ko) * | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| WO2011074379A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
| KR101750126B1 (ko) * | 2010-01-20 | 2017-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 액정 표시 장치 |
| KR101842860B1 (ko) | 2010-01-20 | 2018-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 |
| WO2011125688A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for driving the same |
| US9349325B2 (en) | 2010-04-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US9697788B2 (en) | 2010-04-28 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8698852B2 (en) | 2010-05-20 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the same |
| US9935622B2 (en) | 2011-04-28 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Comparator and semiconductor device including comparator |
| JP5719439B2 (ja) * | 2011-06-27 | 2015-05-20 | シャープ株式会社 | 液晶駆動装置及び液晶表示装置 |
| JP2013093565A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5974350B2 (ja) * | 2011-11-24 | 2016-08-23 | セイコーエプソン株式会社 | 表示装置、表示装置の制御方法及び制御装置 |
| US20130187150A1 (en) * | 2012-01-20 | 2013-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2013179922A1 (en) | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
| US9742378B2 (en) * | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
| KR102082794B1 (ko) | 2012-06-29 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법, 및 표시 장치 |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9984644B2 (en) * | 2012-08-08 | 2018-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for driving the same |
| JP6267902B2 (ja) * | 2012-09-21 | 2018-01-24 | 株式会社半導体エネルギー研究所 | 順序回路、表示装置 |
| WO2014077295A1 (en) | 2012-11-15 | 2014-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2014130336A (ja) | 2012-11-30 | 2014-07-10 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP6205249B2 (ja) | 2012-11-30 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 情報処理装置の駆動方法 |
| US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP2014209209A (ja) | 2013-03-28 | 2014-11-06 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9421264B2 (en) | 2014-03-28 | 2016-08-23 | Duke University | Method of treating cancer using selective estrogen receptor modulators |
| PT3122426T (pt) | 2014-03-28 | 2023-02-28 | Univ Duke | Tratamento de cancro da mama utilizando moduladores seletivos do recetor de estrogénio |
| JP6581825B2 (ja) * | 2014-07-18 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 表示システム |
| TW201614626A (en) | 2014-09-05 | 2016-04-16 | Semiconductor Energy Lab | Display device and electronic device |
| WO2016087999A1 (ja) | 2014-12-01 | 2016-06-09 | 株式会社半導体エネルギー研究所 | 表示装置、該表示装置を有する表示モジュール、及び該表示装置または該表示モジュールを有する電子機器 |
| US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
| JP6681780B2 (ja) | 2015-05-07 | 2020-04-15 | 株式会社半導体エネルギー研究所 | 表示システムおよび電子機器 |
| KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
| KR102553553B1 (ko) | 2015-06-12 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 및 그 동작 방법 및 전자 기기 |
| KR102485165B1 (ko) * | 2015-08-21 | 2023-01-09 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
| WO2017115208A1 (en) | 2015-12-28 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Device, television system, and electronic device |
| US10027896B2 (en) | 2016-01-15 | 2018-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Image display system, operation method of the same, and electronic device |
| JP6906978B2 (ja) | 2016-02-25 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、および電子機器 |
| JP2018013765A (ja) | 2016-04-28 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 電子デバイス |
| US10504204B2 (en) | 2016-07-13 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| CN114115609B (zh) | 2016-11-25 | 2024-09-03 | 株式会社半导体能源研究所 | 显示装置及其工作方法 |
| US10872565B2 (en) | 2017-01-16 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20190104394A (ko) | 2017-01-24 | 2019-09-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| CN106842753B (zh) * | 2017-03-08 | 2020-11-10 | 上海交通大学 | 一种蓝相液晶器件及其制作方法 |
| CN110678974B (zh) | 2017-06-02 | 2023-11-28 | 株式会社半导体能源研究所 | 半导体装置、电子构件及电子设备 |
| US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
| KR102518628B1 (ko) * | 2018-01-08 | 2023-04-10 | 삼성디스플레이 주식회사 | 표시장치 |
| JP7084770B2 (ja) * | 2018-04-27 | 2022-06-15 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102863650B1 (ko) * | 2018-09-12 | 2025-09-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US10824216B2 (en) | 2018-12-28 | 2020-11-03 | Intel Corporation | Apparatus and methods for reduced computing device power consumption |
| CN113508468A (zh) * | 2019-03-01 | 2021-10-15 | 株式会社半导体能源研究所 | 半导体装置 |
| US11379231B2 (en) | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
| TWI768714B (zh) * | 2021-02-17 | 2022-06-21 | 奇景光電股份有限公司 | 頻率鎖定錯誤偵測電路、頻率鎖定錯誤偵測方法和顯示驅動電路 |
| IL310998A (en) * | 2021-08-23 | 2024-04-01 | Lonnie G Johnson | Johnson ambient heat energy converter |
| WO2024252247A1 (ja) * | 2023-06-08 | 2024-12-12 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器 |
| WO2025017437A1 (ja) * | 2023-07-20 | 2025-01-23 | 株式会社半導体エネルギー研究所 | 処理装置及び表示システム |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW558707B (en) * | 2001-01-12 | 2003-10-21 | Sharp Kk | Display apparatus and driving method of same |
| CN1604598A (zh) * | 2003-10-02 | 2005-04-06 | 罗姆股份有限公司 | 便携式通信终端 |
| CN1731497A (zh) * | 2005-08-18 | 2006-02-08 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器省电的方法 |
| CN1963602A (zh) * | 2005-11-09 | 2007-05-16 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其驱动方法 |
| JP2008287115A (ja) * | 2007-05-18 | 2008-11-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| CN101335276A (zh) * | 2005-09-29 | 2008-12-31 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
Family Cites Families (262)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| US5091334A (en) | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5859443A (en) | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5262350A (en) | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH01238073A (ja) | 1988-03-18 | 1989-09-22 | Toshiba Corp | 発光素子 |
| US5181131A (en) | 1988-11-11 | 1993-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Power conserving driver circuit for liquid crystal displays |
| JP2816403B2 (ja) | 1988-11-11 | 1998-10-27 | 株式会社 半導体エネルギー研究所 | 液晶表示装置の駆動方法および液晶表示装置 |
| US5070409A (en) * | 1989-06-13 | 1991-12-03 | Asahi Kogaku Kogyo Kabushiki Kaisha | Liquid crystal display device with display holding device |
| US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JP2838318B2 (ja) | 1990-11-30 | 1998-12-16 | 株式会社半導体エネルギー研究所 | 感光装置及びその作製方法 |
| KR940008180B1 (ko) | 1990-12-27 | 1994-09-07 | 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 | 액정 전기 광학 장치 및 그 구동 방법 |
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JPH06268220A (ja) * | 1993-03-17 | 1994-09-22 | Fujitsu Ltd | 薄膜トランジスタ |
| JP3476241B2 (ja) | 1994-02-25 | 2003-12-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置の表示方法 |
| JPH07297406A (ja) * | 1994-04-21 | 1995-11-10 | Tdk Corp | 縦型薄膜半導体装置 |
| US6943764B1 (en) | 1994-04-22 | 2005-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit for an active matrix display device |
| JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
| TW283230B (enExample) | 1994-08-16 | 1996-08-11 | Handotai Energy Kenkyusho Kk | |
| JP3538841B2 (ja) | 1994-11-17 | 2004-06-14 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
| JP2894229B2 (ja) | 1995-01-13 | 1999-05-24 | 株式会社デンソー | マトリクス型液晶表示装置 |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP3305946B2 (ja) | 1996-03-07 | 2002-07-24 | 株式会社東芝 | 液晶表示装置 |
| JPH1010489A (ja) * | 1996-06-20 | 1998-01-16 | Casio Comput Co Ltd | 液晶表示装置 |
| TW455725B (en) | 1996-11-08 | 2001-09-21 | Seiko Epson Corp | Driver of liquid crystal panel, liquid crystal device, and electronic equipment |
| JPH10154815A (ja) * | 1996-11-25 | 1998-06-09 | Furontetsuku:Kk | 薄膜トランジスタおよびその製造方法とそれを用いた液晶表示装置 |
| JP3496431B2 (ja) | 1997-02-03 | 2004-02-09 | カシオ計算機株式会社 | 表示装置及びその駆動方法 |
| JP3883641B2 (ja) | 1997-03-27 | 2007-02-21 | 株式会社半導体エネルギー研究所 | コンタクト構造およびアクティブマトリクス型表示装置 |
| JPH1152340A (ja) | 1997-07-30 | 1999-02-26 | Toshiba Corp | 液晶表示装置 |
| KR100265767B1 (ko) | 1998-04-20 | 2000-09-15 | 윤종용 | 저전력 구동회로 및 구동방법 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP3846057B2 (ja) | 1998-09-03 | 2006-11-15 | セイコーエプソン株式会社 | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP2000268969A (ja) | 1999-03-17 | 2000-09-29 | Tdk Corp | 有機el素子 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4727029B2 (ja) * | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | El表示装置、電気器具及びel表示装置用の半導体素子基板 |
| JP3767292B2 (ja) | 1999-12-22 | 2006-04-19 | セイコーエプソン株式会社 | 表示装置の駆動方法 |
| JP4537526B2 (ja) * | 2000-03-22 | 2010-09-01 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置及びその駆動方法 |
| JP4754064B2 (ja) * | 2000-12-06 | 2011-08-24 | エーユー オプトロニクス コーポレイション | 表示装置の駆動方法 |
| JP3766926B2 (ja) * | 2000-04-28 | 2006-04-19 | シャープ株式会社 | 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器 |
| CN100507646C (zh) * | 2000-04-28 | 2009-07-01 | 夏普株式会社 | 显示器件、显示器件驱动方法和装有显示器件的电子设备 |
| JP4137394B2 (ja) * | 2000-10-05 | 2008-08-20 | シャープ株式会社 | 表示装置の駆動方法、それを用いた表示装置、およびその表示装置を搭載した携帯機器 |
| CN1220098C (zh) | 2000-04-28 | 2005-09-21 | 夏普株式会社 | 显示器件、显示器件驱动方法和装有显示器件的电子设备 |
| JP2002032048A (ja) | 2000-05-09 | 2002-01-31 | Sharp Corp | 画像表示装置およびそれを用いた電子機器 |
| TWI282957B (en) | 2000-05-09 | 2007-06-21 | Sharp Kk | Drive circuit, and image display device incorporating the same |
| JP2002014320A (ja) | 2000-06-30 | 2002-01-18 | Toshiba Corp | 液晶表示装置の駆動方法 |
| US6992652B2 (en) * | 2000-08-08 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
| JP4212791B2 (ja) | 2000-08-09 | 2009-01-21 | シャープ株式会社 | 液晶表示装置ならびに携帯電子機器 |
| JP2002140036A (ja) | 2000-08-23 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 携帯情報装置及びその駆動方法 |
| JP2002140052A (ja) | 2000-08-23 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 携帯情報装置及びその駆動方法 |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| US7053874B2 (en) | 2000-09-08 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and driving method thereof |
| JP5019668B2 (ja) * | 2000-09-18 | 2012-09-05 | 三洋電機株式会社 | 表示装置及びその制御方法 |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP2002169499A (ja) * | 2000-11-30 | 2002-06-14 | Sanyo Electric Co Ltd | 表示パネルの駆動方法及び表示パネルの駆動制御装置 |
| JP2002175049A (ja) * | 2000-12-06 | 2002-06-21 | Sony Corp | アクティブマトリクス型表示装置およびこれを用いた携帯端末 |
| TW529003B (en) | 2000-12-06 | 2003-04-21 | Sony Corp | Power voltage conversion circuit and its control method, display device and portable terminal apparatus |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| JP2002207462A (ja) * | 2001-01-11 | 2002-07-26 | Toshiba Corp | 液晶表示素子の駆動方法 |
| JP3687550B2 (ja) * | 2001-02-19 | 2005-08-24 | セイコーエプソン株式会社 | 表示ドライバ、それを用いた表示ユニット及び電子機器 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP4197852B2 (ja) * | 2001-04-13 | 2008-12-17 | 三洋電機株式会社 | アクティブマトリクス型表示装置 |
| JP2002328661A (ja) * | 2001-04-27 | 2002-11-15 | Toshiba Corp | 液晶表示装置の駆動方法及び液晶表示装置 |
| JP4869516B2 (ja) | 2001-08-10 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| CN100394265C (zh) * | 2001-09-18 | 2008-06-11 | 夏普株式会社 | 液晶显示器设备 |
| TW574529B (en) | 2001-09-28 | 2004-02-01 | Tokyo Shibaura Electric Co | Organic electro-luminescence display device |
| JP2003131633A (ja) * | 2001-10-29 | 2003-05-09 | Sony Corp | 表示装置の駆動方法 |
| KR100806904B1 (ko) * | 2001-10-30 | 2008-02-22 | 삼성전자주식회사 | 액정표시장치의 구동 장치 |
| WO2003040441A1 (fr) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| JP4014895B2 (ja) | 2001-11-28 | 2007-11-28 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置およびその駆動方法 |
| KR20040077813A (ko) | 2002-02-19 | 2004-09-06 | 호야 가부시키가이샤 | 전계효과트랜지스터형 발광소자 |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| JP2003249656A (ja) * | 2002-02-22 | 2003-09-05 | Canon Inc | 有機薄膜トランジスタ素子とその製造方法 |
| JP2009273913A (ja) | 2002-03-08 | 2009-11-26 | Sanyo Product Co Ltd | 遊技機 |
| US7109961B2 (en) | 2002-03-13 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit, latch circuit, display apparatus and electronic equipment |
| CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2003344823A (ja) | 2002-05-23 | 2003-12-03 | Sharp Corp | 液晶表示装置および液晶表示駆動方法 |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| JP4638117B2 (ja) * | 2002-08-22 | 2011-02-23 | シャープ株式会社 | 表示装置およびその駆動方法 |
| JP2004087682A (ja) | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP2003208111A (ja) | 2002-10-17 | 2003-07-25 | Matsushita Electric Ind Co Ltd | 有機el表示装置と液晶表示装置及び表示装置用半導体装置 |
| CN100411153C (zh) * | 2003-01-10 | 2008-08-13 | 统宝光电股份有限公司 | 薄膜晶体管阵列及其驱动电路的制造方法 |
| JP4306274B2 (ja) * | 2003-02-14 | 2009-07-29 | パナソニック株式会社 | 液晶表示装置 |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| KR100945577B1 (ko) | 2003-03-11 | 2010-03-08 | 삼성전자주식회사 | 액정 표시 장치의 구동 장치 및 그 방법 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| JP4480968B2 (ja) | 2003-07-18 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP4393812B2 (ja) | 2003-07-18 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7291967B2 (en) | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
| JP4423925B2 (ja) * | 2003-10-28 | 2010-03-03 | セイコーエプソン株式会社 | 電気光学装置、これを制御する装置および方法、ならびに電子機器 |
| US6955932B2 (en) | 2003-10-29 | 2005-10-18 | International Business Machines Corporation | Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
| JP2005167164A (ja) * | 2003-12-05 | 2005-06-23 | Mitsui Chemicals Inc | トランジスタ及びその作製方法 |
| JP2005190797A (ja) | 2003-12-25 | 2005-07-14 | Seiko Epson Corp | 有機el装置および電子機器 |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| JP2005266178A (ja) * | 2004-03-17 | 2005-09-29 | Sharp Corp | 表示装置の駆動装置、表示装置、及び表示装置の駆動方法 |
| JP2005327966A (ja) | 2004-05-17 | 2005-11-24 | Seiko Epson Corp | 半導体装置、電気光学装置、集積回路及び電子機器 |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006024610A (ja) * | 2004-07-06 | 2006-01-26 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP2006084758A (ja) | 2004-09-16 | 2006-03-30 | Seiko Epson Corp | 電気光学装置用駆動回路及び方法、電気光学装置、並びに電子機器 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| TWI472037B (zh) | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| US8847861B2 (en) | 2005-05-20 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device, method for driving the same, and electronic device |
| US7537976B2 (en) | 2005-05-20 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor |
| JP5116251B2 (ja) * | 2005-05-20 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5427340B2 (ja) * | 2005-10-14 | 2014-02-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2007043493A1 (en) | 2005-10-14 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| WO2007058329A1 (en) | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5376750B2 (ja) * | 2005-11-18 | 2013-12-25 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル |
| JP5395994B2 (ja) | 2005-11-18 | 2014-01-22 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
| US7998372B2 (en) | 2005-11-18 | 2011-08-16 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel |
| KR100766318B1 (ko) | 2005-11-29 | 2007-10-11 | 엘지.필립스 엘시디 주식회사 | 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법 |
| US7314801B2 (en) * | 2005-12-20 | 2008-01-01 | Palo Alto Research Center Incorporated | Semiconductor device having a surface conducting channel and method of forming |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| JP2007206651A (ja) | 2006-02-06 | 2007-08-16 | Toshiba Corp | 画像表示装置及びその方法 |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| JP2007250982A (ja) | 2006-03-17 | 2007-09-27 | Canon Inc | 酸化物半導体を用いた薄膜トランジスタ及び表示装置 |
| WO2007108177A1 (ja) * | 2006-03-23 | 2007-09-27 | Sharp Kabushiki Kaisha | 表示装置およびその駆動方法 |
| JP4956030B2 (ja) | 2006-03-31 | 2012-06-20 | キヤノン株式会社 | 有機el表示装置およびその駆動方法 |
| US7616179B2 (en) | 2006-03-31 | 2009-11-10 | Canon Kabushiki Kaisha | Organic EL display apparatus and driving method therefor |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| US7807515B2 (en) | 2006-05-25 | 2010-10-05 | Fuji Electric Holding Co., Ltd. | Oxide semiconductor, thin-film transistor and method for producing the same |
| US20070278493A1 (en) * | 2006-06-02 | 2007-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP2008033066A (ja) | 2006-07-28 | 2008-02-14 | Sony Corp | 表示動作制御装置、表示装置、電子機器、表示動作制御方法及びコンピュータプログラム |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4946286B2 (ja) | 2006-09-11 | 2012-06-06 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、それを用いた画像表示装置およびその駆動方法 |
| JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5468196B2 (ja) | 2006-09-29 | 2014-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び液晶表示装置 |
| JP5116277B2 (ja) * | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| TWI850180B (zh) * | 2006-09-29 | 2024-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| JP5177999B2 (ja) * | 2006-12-05 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| US8143115B2 (en) | 2006-12-05 | 2012-03-27 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
| WO2008069255A1 (en) | 2006-12-05 | 2008-06-12 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| US8129714B2 (en) | 2007-02-16 | 2012-03-06 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, complementary transistor circuit device |
| JP4910779B2 (ja) | 2007-03-02 | 2012-04-04 | 凸版印刷株式会社 | 有機elディスプレイおよびその製造方法 |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| JP4727684B2 (ja) | 2007-03-27 | 2011-07-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
| US8552948B2 (en) | 2007-04-05 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising threshold control circuit |
| JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
| WO2008126879A1 (en) | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| JP5542296B2 (ja) * | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
| JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
| JP2009003437A (ja) | 2007-05-18 | 2009-01-08 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
| US8803781B2 (en) * | 2007-05-18 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| JP5406449B2 (ja) * | 2007-05-30 | 2014-02-05 | キヤノン株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
| KR101376073B1 (ko) * | 2007-06-14 | 2014-03-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법 |
| JP2009031750A (ja) | 2007-06-28 | 2009-02-12 | Fujifilm Corp | 有機el表示装置およびその製造方法 |
| KR20090002841A (ko) * | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법 |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI575293B (zh) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP2009031595A (ja) | 2007-07-27 | 2009-02-12 | Sharp Corp | 表示装置およびそれを備える電子機器ならびに表示装置の制御方法 |
| KR101563692B1 (ko) * | 2007-10-19 | 2015-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동 방법 |
| JP2010103451A (ja) | 2007-11-26 | 2010-05-06 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた電界発光装置 |
| TW200949822A (en) | 2007-11-26 | 2009-12-01 | Tpo Displays Corp | Display system and method for reducing power consumption of same |
| JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP2009152487A (ja) | 2007-12-21 | 2009-07-09 | Seiko Epson Corp | 薄膜トランジスタ、半導体装置及び電気光学装置 |
| WO2009084311A1 (ja) | 2007-12-27 | 2009-07-09 | Sharp Kabushiki Kaisha | 半導体装置、単結晶半導体薄膜付き基板及びそれらの製造方法 |
| WO2009093625A1 (ja) | 2008-01-23 | 2009-07-30 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置 |
| JP4596070B2 (ja) | 2008-02-01 | 2010-12-08 | ソニー株式会社 | メモリ素子及びメモリ素子の製造方法、並びに表示装置及び表示装置の製造方法 |
| KR100963003B1 (ko) * | 2008-02-05 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP5305696B2 (ja) | 2008-03-06 | 2013-10-02 | キヤノン株式会社 | 半導体素子の処理方法 |
| JP5467728B2 (ja) | 2008-03-14 | 2014-04-09 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびその製造方法 |
| JP2009229817A (ja) * | 2008-03-24 | 2009-10-08 | Epson Imaging Devices Corp | 電気光学装置及び電子機器 |
| JP2009238916A (ja) | 2008-03-26 | 2009-10-15 | Dainippon Screen Mfg Co Ltd | 基板処理装置のスケジュール作成方法及びそのプログラム |
| JP5325446B2 (ja) | 2008-04-16 | 2013-10-23 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP5305731B2 (ja) | 2008-05-12 | 2013-10-02 | キヤノン株式会社 | 半導体素子の閾値電圧の制御方法 |
| KR101496148B1 (ko) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| JP5608347B2 (ja) * | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| KR101533741B1 (ko) * | 2008-09-17 | 2015-07-03 | 삼성디스플레이 주식회사 | 표시패널의 구동방법 및 이를 이용한 표시장치 |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| KR101515468B1 (ko) | 2008-12-12 | 2015-05-06 | 삼성전자주식회사 | 표시장치 및 그 동작방법 |
| JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
| CN101510411B (zh) * | 2009-03-05 | 2011-01-19 | 友达光电股份有限公司 | 显示装置及其修复方法 |
| CN101510443A (zh) * | 2009-04-08 | 2009-08-19 | 友达光电股份有限公司 | 能降低耦合效应的移位寄存器 |
| JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
| JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| KR20210131462A (ko) | 2009-07-10 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
| JP2009278999A (ja) | 2009-07-27 | 2009-12-03 | Fuji Seiki Co Ltd | 食材盛付装置 |
| US9715845B2 (en) | 2009-09-16 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| KR101763959B1 (ko) | 2009-10-08 | 2017-08-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 및 전자 기기 |
| KR101801540B1 (ko) | 2009-10-16 | 2017-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| CN102576172B (zh) | 2009-10-30 | 2016-01-27 | 株式会社半导体能源研究所 | 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器 |
| KR102329497B1 (ko) | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| CN104765184B (zh) | 2015-02-13 | 2018-09-04 | 厦门天马微电子有限公司 | 液晶显示面板 |
| JP6379259B2 (ja) * | 2017-06-30 | 2018-08-22 | 株式会社半導体エネルギー研究所 | 表示装置、及び電子機器 |
-
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- 2010-09-28 CN CN202310341421.XA patent/CN116343705B/zh active Active
- 2010-09-28 EP EP17173363.7A patent/EP3244394A1/en not_active Withdrawn
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-
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- 2017-04-21 JP JP2017084501A patent/JP6229088B2/ja active Active
-
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-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW558707B (en) * | 2001-01-12 | 2003-10-21 | Sharp Kk | Display apparatus and driving method of same |
| CN1604598A (zh) * | 2003-10-02 | 2005-04-06 | 罗姆股份有限公司 | 便携式通信终端 |
| CN1731497A (zh) * | 2005-08-18 | 2006-02-08 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器省电的方法 |
| CN101335276A (zh) * | 2005-09-29 | 2008-12-31 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| CN1963602A (zh) * | 2005-11-09 | 2007-05-16 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其驱动方法 |
| JP2008287115A (ja) * | 2007-05-18 | 2008-11-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
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