CN103748658B - 使用从惰性气体形成的亚稳态体的原子层蚀刻 - Google Patents

使用从惰性气体形成的亚稳态体的原子层蚀刻 Download PDF

Info

Publication number
CN103748658B
CN103748658B CN201280035911.7A CN201280035911A CN103748658B CN 103748658 B CN103748658 B CN 103748658B CN 201280035911 A CN201280035911 A CN 201280035911A CN 103748658 B CN103748658 B CN 103748658B
Authority
CN
China
Prior art keywords
gas
layer
plasma
metastable state
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280035911.7A
Other languages
English (en)
Other versions
CN103748658A (zh
Inventor
哈梅特·辛格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN201610031466.7A priority Critical patent/CN105679632B/zh
Publication of CN103748658A publication Critical patent/CN103748658A/zh
Application granted granted Critical
Publication of CN103748658B publication Critical patent/CN103748658B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本发明公开了用于蚀刻原子层的衬底处理系统和方法。所述方法和系统被配置为将第一气体引入所述室，该气体是适合于蚀刻所述层的蚀刻剂气体，且允许所述第一气体存在于所述室中持续足以造成所述第一气体中的至少一些吸附到所述层的一段时间。用惰性气体实质上置换在所述室内的所述第一气体，然后从惰性气体产生亚稳态体以用所述亚稳态体蚀刻层，同时实质上防止所述等离子体带电物质蚀刻所述层。

Description

使用从惰性气体形成的亚稳态体的原子层蚀刻
背景技术
原子层蚀刻是在本领域中已知的用于半导体器件制造的用非常精细的精度执行关键蚀刻的技术。在原子层蚀刻中，在薄层上进行蚀刻，同时尝试避免不必要的亚表面损伤或不希望有的改性。例如，可以执行原子层蚀刻以蚀刻覆盖另一关键层的非常薄的层。例如，在体型蚀刻步骤结束时，当试图清除层，同时确保薄的剩余层的蚀刻不会导致损坏下伏层和／或下伏结构时，也可使用原子层蚀刻。
详而言之，已知使用等离子体的蚀刻具有导致对下伏结构和／或下伏层产生上述的亚表面损伤或改性的潜力。在等离子体蚀刻过程中，栅极电介质下面的硅损失是亚表面损失的例子，即，即使在薄的栅极电介质(通常Si02)存在下在栅极蚀刻过程中仍然产生的硅凹陷。在某些情况下，公知用大于100eV的离子能量的等离子体蚀刻导致对表面以下约20-40埃的深度的损伤。因此，在典型的栅极氧化层厚度为约10埃的情况下，栅极蚀刻后约10-20埃的硅凹陷是常见的。
本发明涉及用于在半导体器件制造中执行原子层蚀刻的改进的装置和方法。
发明内容
在一种实施方式中，本发明涉及一种用于蚀刻在半导体处理室中的衬底上的层的方法。该方法包括将第一气体引入所述室，该第一气体是适合用于蚀刻所述层的蚀刻剂气体。该方法还包括使所述第一气体能够存在于所述室持续足以造成所述第一气体中的至少一些吸附到层的一段时间。该方法进一步包括用惰性气体实质置换室中的第一气体。该方法另外包括从惰性气体产生亚稳态体(metastables)，并用所述亚稳态体蚀刻所述层。
上述内容只涉及此处披露的本发明的许多实施方式之一，并且不意图限制本发明的范围，在本文的权利要求中阐述了本发明的范围。将在下面本发明的具体实施方式中结合下面附图更详细地描述本发明的这些和其他特征。
附图说明
在附图中的图中通过举例的方式而不是通过限制的方式阐述本发明，其中相同的附图标记表示相似的元件，其中：
图1示出了根据本发明的一种或多种实施方式的适用于执行原子层蚀刻的衬底处理室的例子。
图2示出了根据本发明的一种或多种实施方式的分隔板结构和可选的准直器板的例子。
图3示出了根据本发明的一种或多种实施方式的用亚稳态体定向蚀刻的例子。
图4示出了根据本发明的一种实施方式的用于执行原子层蚀刻的步骤。
具体实施方式
下面将参照附图所示的若干实施方式来详细描述本发明。在下文中，为了提供对本发明的全面理解，阐述了很多特定的细节。然而，对本领域技术人员来说，很显然本发明可以在不具有这些细节的部分或全部的环境之下实现。在其他示例中，则未详细描述公知的工艺步骤和／或结构以免不必要地使本发明难以理解。
下文中描述了多种实施方式，包括方法和技术。应该了解的是，本发明还可包括制造的制品，该制品包括存储用于实施本发明的实施方式的计算机可读指令的计算机可读介质。举例来说，计算机可读介质包括，用于存储计算机可读代码的半导体的、磁性的、光磁性的、光学的或其他形式的计算机可读介质。此外，本发明也包括实现本发明实施方式的装置。这样的装置可包括专用和／或可编程的电路以执行关于本发明实施方式中的任务。这样的装置的例子包括通用计算机和／或适当编程的专用计算装置，并且还包括适用于与本发明的实施方式相关的不同任务的计算机／计算装置和专用的／可编程的电路的组合。
本发明的实施方式涉及用于在衬底(如半导体晶片或平板)的层上执行原子层蚀刻的装置和方法。在一种或多种实施方式中，适合于蚀刻衬底层的蚀刻剂源气体被引入到半导体处理室中。为了蚀刻Si层，例如，蚀刻剂气体可以是C12、HCl、CHF3、CH2F2、CH3F、H2、BCl3、SiCl4、Br2、HBr、NF3、CF4，SF6、02、S02、COS等中的一种或其混合物。该蚀刻剂气体被允许存在于该室持续足够量的时间以允许所述蚀刻剂气体物质中的至少一些被吸附到要蚀刻的层中。随后，蚀刻剂气体被置换为惰性气体(诸如Ar、He、Kr、Ne、Xe等中的一种或其混合物)。然后，从惰性气体形成亚稳态体以在衬底层上进行原子层蚀刻。该循环可以重复多次，直到原子层蚀刻完成。
在一种或多种实施方式中，亚稳态体是在室中的等离子体产生区域通过从惰性气体点燃的等离子体形成的。然后亚稳态从在等离子体产生区域中产生的等离子体迁移通过在分隔板中的孔以与衬底层接触。但是，高能等离子体的离子被防止接触晶片的表面，以尽量减少对衬底层的无意的蚀刻和／或亚表面损伤和／或改性。在原子层的蚀刻过程中，衬底被布置在室的晶片处理区域和在卡盘上。在接触衬底层表面时，亚稳态体被去激发，并在工艺中，放弃他们的电子能量，以造成在经吸附的(adsorbed)衬底表面处的表面反应，从而蚀刻衬底表面。由于亚稳态的定向能量往往(例如，氩的亚稳态为约0.025eV)比等离子体的高能离子的100-1000eV的能量要低得多，因此当使用惰性气体亚稳态体和吸附层的结合蚀刻时，损伤基本减至最低。
在一种或多种实施方式中，上述的分隔板是具有彼此电绝缘的多个板的多板结构。在本发明的一种或多种实施方式中，多板组件的板中的至少一个被偏置以排斥从等离子体所产生的离子。多板组件的板中的每个具有通孔，以允许亚稳态体从等离子体产生区域穿过到达晶片处理区域。如果需要，在一种实施方式中板的通孔可对齐，或者可以略微偏移。将分隔板的通孔的大小设置成实质上防止高能等离子体物质穿过分隔板并到达衬底表面。
在一种或多种实施方式中，准直器板被设置在分隔板和衬底之间以进行校准亚稳态体，从而只允许基本定向的亚稳态体到达衬底表面，以使蚀刻更具各向异性，即沿垂直于衬底平面的垂直方向。根据需要，准直器板可包括通孔并可接地或偏置。
为了防止由于分隔板和／或准直器板的孔图案造成的表面的非均匀蚀刻，所述分隔板和／或准直器板可以相对于衬底移动(或反之亦然)。分隔板和／或准直器板和／或晶片和晶片卡盘组件的相对的横向运动具有防止在分隔板或准直器板的孔图案仅在衬底表面的特定区域留下痕迹(imprint)的作用。
本发明的一种或多种实施方式包括用于执行如本文所描述的原子层蚀刻方法。本发明的一种或多种实施方式包括具有本文描述的硬件的衬底处理系统和／或衬底处理室并且还可以包括逻辑器(其可以经由专用逻辑电路、可编程逻辑电路来实现，和／或通过包含在计算机可读介质中的计算机可读代码和／或经由总线或数字网络(包括局域网和／或因特网)作为数字信号传送给微处理器／微控制器／计算机用于执行的计算机可读代码控制的微处理器／微控制器／计算机来实现)。
参照下面的附图和讨论可理解本发明的实施方式的特征和优点。
本发明的实施方式使用一种或多种惰性气体的亚稳态体以激发已吸附在衬底层(例如，硅层)的反应物(例如，卤素)的表面反应。尽管在本文中用Si层作为例子，但应理解的是，可以使用本发明的实施方式的原子蚀刻技术蚀刻任何层。在一种或多种实施方式中，将晶片的表面暴露于蚀刻剂气体(例如，C12、HCl、CHF3、CH2F2、CH3F、H2、BCl3、SiCl4、Br2、HBr、NF3、CF4、SF6、O2、SO2、COS等中的一种或其混合物)。在一种或多种实施方式中，衬底处理室可填充有蚀刻剂气体或蚀刻剂气体混合物持续短的一段时间(约0.05秒至约180秒)，以允许蚀刻剂气体分子吸附在衬底表面上。在一种或多种实施方式中，衬底处理室可填充有蚀刻剂气体或蚀刻剂气体混合物持续约0.25秒至约5秒，以允许蚀刻剂气体分子吸附在衬底表面上。
图1示出了根据本发明的一种实施方式的示例的衬底处理室，其包括在其上放置衬底104(例如晶片)的卡盘102。或者气体入口106或者108a／108b或入口106和108a／108b两者可用于将气体注入到室中。在一种或多种实施方式中，将惰性气体(如Ar、He、Kr、Ne、Xe等中的一种或其混合物)经由气体入口106注入到等离子体产生区域110中，而蚀刻剂气体经由气体入口108a／108b被引入到衬底处理区域112，以确保蚀刻剂气体不进入等离子体产生区域110。在这种情况下，优选的是，在等离子体产生区域110中的压强至少等于或大于在衬底处理区域112中的压强。等离子体产生区域110至少通过分隔板结构130(和任选地通过准直器板，这将在下文中讨论)与衬底处理区域112分隔开。
在接下来的步骤中，在蚀刻剂气体有足够的时间以吸附在衬底表面上后，蚀刻剂气体通过室排出泵120a／120b抽空。这可与通过进气口106引入惰性气体到等离子体产生区域110相结合来完成。如果蚀刻剂气体抽空完成而没有同时流入惰性气体，则下一个步骤可包括通过进气口106使惰性气体流动进入等离子体产生区域110。
在实质上将来自室的蚀刻剂气体置换为惰性气体时，惰性气体等离子体在等离子体室中产生，且更具体地在等离子体产生区域110中产生。在一种实施方式中，如果至少有80％的蚀刻剂气体被置换为惰性气体，则蚀刻剂气体被认为是实质上由惰性气体置换。在一种实施方式中，如果至少有90％的蚀刻剂气体被置换为惰性气体，则蚀刻剂气体被认为是实质上由惰性气体置换。在一种实施方式中，如果至少有95％的蚀刻剂气体被置换为惰性气体，则蚀刻剂气体被认为是实质上由惰性气体置换。在一种实施方式中，如果至少有99％的蚀刻剂气体被置换为惰性气体，则蚀刻剂气体被认为是实质上由惰性气体置换。
在等离子体中产生的亚稳态物质通过分隔板结构130移动到衬底处理区域112中。在衬底处理区域112中的压强可以使用例如涡轮分子泵、压力控制阀、分隔板的设计和惰性气体流量来控制。
在一种或多种实施方式中，合乎期望的是保持在衬底处理区域内的压强为＜10毫乇，使得进入晶片加工区域的亚稳态体的大部分都能够影响衬底而不在晶片处理室中通过气体相碰撞而猝灭。例如，在一种实施方式中，可保持分隔板和衬底之间的距离在约1cm和25cm之间。
用于产生亚稳态体的等离子体源可以选自不同的技术，技术包括电感耦合等离子体(ICP)、电容耦合等离子体、空心阴极放电阵列、微波等离子体、或电子回旋共振(ECR)等离子体或任何其他合适的等离子体源技术。
图1还示出了感应耦合等离子体源150，其代表用于使射频能量与在等离子体产生区域110中产生的等离子体感应耦合的天线。在一种优选的实施方式中，可使用ICP(电感耦合等离子体)或ECR(电子回旋共振)等离子体源，因为它们在低压强下有产生高密度等离子体的能力。在一种或多种实施方式中，在等离子体产生区域110中的压强为介于约0.5毫乇和约100毫乇之间。
分隔板结构130被设计成作为接地表面以通过实质上防止等离子体带电物质到达所述衬底，从而限制通过在分隔板上中的孔泄漏的等离子体的量。在一种实施方式中，如果将要到达衬底表面的等离子体带电物质中的至少60％通过分隔板结构被防止到达衬底，则分隔板结构被认为实质上防止了等离子体带电物质到达衬底。在一种实施方式中，如果将要到达衬底表面的等离子体带电物质中的至少80％通过分隔板结构被防止到达衬底，则分隔板结构被认为实质上防止了等离子体带电物质到达衬底。在一种实施方式中，如果将要到达衬底表面的等离子体带电物质中的至少95％通过分隔板结构被防止到达衬底，则分隔板结构被认为实质上防止了等离子体带电物质到达衬底。在一种实施方式中，如果将要到达衬底表面的等离子体带电物质中的至少99％通过分隔板结构被防止到达衬底，则分隔板结构被认为实质上防止了等离子体带电物质到达衬底。
分隔板结构130的板可以由金属(例如，铝或不锈钢或类似的合适的材料)，或覆膜金属(例如，阳极氧化铝，涂有Y2O3、YF3、CeO2、硅、TiN的铝合金)制造。在一种或多种实施方式中，分隔板的厚度可以为介于1mm和25mm之间。在一种或多种实施方式中，在分隔板中的孔的直径可被选择以最小化或实质上防止等离子体泄漏穿过孔，并且可以是介于20微米到5毫米之间。
在一种或多种实施方式中，分隔板结构202是多层结构(如根据本发明的一种实施方式在图2所示)，据此，两个导电板204和206通过绝缘层208分隔开，使得彼此电绝缘。顶板204与在等离子体产生区域200中的等离子体接触，并电气接地。底板206可用小DC电压偏置以排斥来自等离子体所产生的离子。底板206上所施加的偏置电压可以大于等离子体电位，以防止大多数的离子到达衬底228上方的衬底处理区域210。在一种或多种实施方式中，底板206上所施加的电压可以在约10V至约50V之间。
在一种或多种实施方式中，以例如网孔等形式的准直器板226可设置在分隔板结构202和衬底228之间，以排斥任何等离子体带电物质通过分隔板结构202到达衬底228。如果需要的话，准直器板226可以被偏置以排斥等离子体带电物质或者可以接地。在另一种实施方式中，衬底228可以相对于等离子体电位被正向偏置，以防止等离子体带电物质到达衬底228。
分隔板结构202也用于校准向衬底228发射的中性束。在一种或多种实施方式中，通过在衬底228上保持压强低于10毫乇，优选<1毫乇，由于在1毫乇中性平均自由路径为约25cm，从分隔板结构202所散发的气体和气体在衬底处理区域210中在晶片228上方的气体之间的碰撞被最小化。这确保了亚稳态体到达晶片228的表面，而在从分隔板结构202运送至衬底228的过程中没有任何显著碰撞。
本发明的实施方式采用已被吸附和／或充满有反应物质(例如，卤素)的到达晶片表面上的惰性的亚稳态原子的通量。亚稳态原子携带大的电子能量到晶片以诱导化学反应。Ar亚稳态原子(Ar*，其中“*”表示亚稳态形式)携带，例如，约110.7eV的能量。当Ar*原子与表面相互作用时该能量被传递到晶片表面。
由于Ar*原子以接近热气体速率(0.025eV)行进，与通常用在蚀刻等离子体的高能离子(100-1000eV)相比，亚稳态原子赋予更小的动量和轰击到表面。在许多情况下，认为Ar*原子在撞击晶片时实质上不能导致表面损伤。
如图2所示，为了实现高度定向蚀刻，Ar和Ar*原子束可以使用另一种多孔板进一步校准。在本实施方式中，将与分隔板204和206具有实质上相同的孔图案的准直器板226放置在离分隔板结构202小的距离处。准直器板226被对齐，使得沿分隔板的轴线(即，垂直于分隔板平面)朝向衬底228行进的Ar*具有从在等离子体产生区域中的等离子体到晶片的视线。
更一般地说，仅沿着具有相对于该垂直轴(定义为垂直于分隔板平面的轴线)的小角度的圆锥体行进的Ar*(优选低于+／-3度，更优选小于+／-0.5度)可以通过准直器板226而没有与准直器板226发生任何碰撞。这些Ar*原子用箭头230和232示出。以相对于垂直轴线的更大角度行进的所有其他的Ar*原子(240和242)遭受与准直器板碰撞，并且被去激发，从而在碰撞时变成Ar基态。这个方案允许Ar*的垂直定向通量撞击在晶片表面上(与氩原子一起)，以产生更加垂直、更具各向异性的蚀刻。
Ar*原子的定向通量撞击在配给(dosed)有或吸附有如前面提到的蚀刻剂的特征上。Ar*原子将电子能量传递到表面，诱导例如导致特征的底部而不是在侧壁上的表面蚀刻的化学反应。当通过Ar*诱导的蚀刻(或Ar*诱导的解吸)在表面上的蚀刻剂完全耗尽时，蚀刻反应停止。因为从撞击表面的Ar和Ar*的束传递的动量非常小，所以在表面上实质上不发生损伤。图3示出这个垂直蚀刻方面是由于这一事实，即只有垂直定向的Ar*原子撞击特征304的底部302而不是特征304的侧壁306和308。
为了防止由于分隔板结构202和／或准直器板226中的孔图案造成的表面层的非均匀蚀刻，可以相对于衬底228移动分隔板结构202和／或准直器板226(或反之亦然)。分隔板结构202和／或准直器板226和／或晶片与晶片卡盘组件的相对的横向运动具有防止分隔板结构202或准直器板226的孔图案只在衬底表面的给定的区域留下痕迹的效果。
一般来说，分隔板结构202和／或准直器板226和／或晶片与晶片卡盘组件的相对的横向移动应该足够大，以确保在晶片上的所有相关的位置的Ar*的时间平均的均匀通量。在一般情况下，横向移动的幅度可以至少为与分隔板中的孔之间的距离一样大，在一种或多种实施方式中优选是分隔板中的孔之间的距离的2倍。
图4示出了根据本发明的实施方式的用于执行原子层蚀刻的步骤。在步骤402中，用蚀刻剂源气体填充室并且更具体地填充在晶片上方的室区域，以促进在衬底表面的蚀刻剂气体分子的吸附。在步骤404中，蚀刻剂气体从室抽空，并用惰性气体取代(步骤406)。然后惰性气体被激发和点燃以形成等离子体产生区域中的等离子体从而产生亚稳态体(步骤408)。
如上所述，采用惰性气体亚稳态体通过诱导在衬底的吸附表面上的表面反应来蚀刻衬底层。可采用分隔板结构以防止等离子体的高能物质接触衬底表面，从而最大限度地减少对衬底表面的损坏或过度蚀刻。如果需要的话，也可使用准直器板，以进一步促进蚀刻的方向性，从而产生高度的各向异性蚀刻。
在步骤410中，为了防止由于在分隔板结构和／或准直器板中的孔图案造成的表面层非均匀蚀刻，可相对于衬底横向移动分隔板和／或准直器板，(或反之亦然)。例如，移动可以通过合适的致动器装置(其可以包括马达和任选关联的传动装置)来执行。
从上述可知，本发明的实施方式采用惰性气体的亚稳态体激活已经吸附有蚀刻剂分子的衬底层的表面反应。通过采用亚稳态体的电子能量以在衬底的吸附表面层上执行蚀刻并通过防止等离子体物质在原子层蚀刻期间轰击衬底表面，本发明的实施方式有利地防止了当蚀刻高度精密的层和／或执行关键的原子层蚀刻时由等离子体中的高能物质造成的轰击损伤。
尽管已经通过多种实施方式来描述本发明，但依然有落入本发明的保护范围之内的变形方案、置换方案以及等同方案。如果本文中使用术语“组”，那么这样的术语意图具有其自身通用的能够理解的数学含义，其涵盖零个、一个或者多个一个成员。本发明应该被理解为涵盖了这些变形方案、置换方案以及等同方案。还应该注意的是，有许多实现本发明的方法和装置的替代方式。尽管本文中已经提供了不同的实施例，但其意思是这些实施例是说明性的而并不是对本发明的限制。

Claims (19)

1.一种用于蚀刻在半导体处理室中的衬底上的层的方法，所述半导体处理室具有等离子体产生区域和衬底处理区域，所述等离子体产生区域通过分隔板结构与所述衬底处理区域分隔，所述方法包括：
将第一气体引入所述半导体处理室的所述衬底处理区域，所述第一气体是适合于蚀刻所述层的蚀刻剂气体；
将惰性气体引入所述等离子体产生区域，使得在所述等离子体产生区域中的所述惰性气体的压强大于在所述衬底处理区域中的所述蚀刻剂气体的压强；
允许所述第一气体存在于所述半导体处理室的所述衬底处理区域中持续足以造成所述第一气体中的至少一些吸附到所述层的一段时间；
在所述一段时间结束之后，用所述惰性气体置换在所述半导体处理室内的所述第一气体中的至少80％；
从所述惰性气体产生亚稳态体；以及
用所述亚稳态体蚀刻所述层。
2.根据权利要求1所述的方法，其中，通过从所述等离子体产生区域中的所述惰性气体形成等离子体来产生所述亚稳态体。
3.根据权利要求2所述的方法，其中，所述亚稳态体在从所述等离子体迁移到所述层时穿过所述分隔板结构。
4.根据权利要求3所述的方法，其中，所述分隔板结构具有多个孔，该多个孔被配置为防止在所述等离子体产生区域中产生的等离子体带电物质中的至少60％迁移达到所述层。
5.根据权利要求3所述的方法，其中，所述分隔板结构包括彼此电气绝缘的至少两个板，在所述蚀刻过程中所述两个板具有不同电压电位。
6.根据权利要求3所述的方法，其中，所述亚稳态体在从所述等离子体迁移到所述层时还穿过准直器板，其中，所述准直器板被设置在所述衬底与所述分隔板结构之间。
7.根据权利要求3所述的方法，其还包括在使用所述亚稳态体的所述蚀刻过程中使所述分隔板和所述衬底中的至少一个相对另一个移动。
8.根据权利要求1所述的方法，其中，所述蚀刻剂气体含有至少卤素并且所述层含有Si。
9.根据权利要求1所述的方法，其中，所述一段时间为介于0.05秒至180秒之间。
10.根据权利要求1所述的方法，其中，在所述半导体处理室中的所述第一气体中的至少90％被置换成所述惰性气体后进行所述产生所述亚稳态体。
11.一种用于蚀刻在半导体处理室中的衬底上的层的方法，所述半导体处理室具有等离子体产生区域和衬底处理区域，所述等离子体产生区域通过分隔板结构与所述衬底处理区域分隔，所述方法包括：
将第一气体引入所述半导体处理室的所述衬底处理区域，所述第一气体是适合于蚀刻所述层的蚀刻剂气体；
将惰性气体引入所述等离子体产生区域；
允许所述第一气体存在于所述半导体处理室的所述衬底处理区域中持续足以造成所述第一气体中的至少一些吸附到所述层的一段时间，同时维持在所述等离子体产生区域中的所述惰性气体的压强大于在所述衬底处理区域中的所述蚀刻剂气体的压强；
在所述一段时间结束之后，用所述惰性气体置换在所述半导体处理室内的所述第一气体中的至少80％；
在所述半导体处理室的所述等离子体产生区域中产生等离子体以从所述惰性气体产生亚稳态体；以及
用所述亚稳态体蚀刻所述层，同时维持所述衬底处理区域的压强低于10毫乇。
12.根据权利要求11所述的方法，其中，所述亚稳态体在从所述等离子体迁移到所述层时穿过所述分隔板结构。
13.根据权利要求11所述的方法，其中，所述分隔板结构具有多个孔，该多个孔被配置为防止在所述等离子体产生区域中产生的等离子体带电物质中的至少60％迁移达到所述层。
14.根据权利要求11所述的方法，其中，所述分隔板结构包括彼此电气绝缘的至少两个板，在所述蚀刻过程中所述两个板具有不同电压电位。
15.根据权利要求11所述的方法，其中，所述亚稳态体在从所述等离子体迁移到所述层时还穿过准直器板，其中，所述准直器板被设置在所述衬底与所述分隔板结构之间。
16.根据权利要求11所述的方法，其还包括在使用所述亚稳态体的所述蚀刻过程中使所述分隔板和所述衬底中的至少一个相对另一个移动。
17.根据权利要求11所述的方法，其中，所述蚀刻剂气体含有至少卤素并且所述层含有Si。
18.根据权利要求11所述的方法，其中，所述一段时间为介于0.05秒至180秒之间。
19.根据权利要求11所述的方法，其中，在所述半导体处理室中的所述第一气体中的至少90％被置换成所述惰性气体后进行所述产生所述亚稳态体。
CN201280035911.7A 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻 Active CN103748658B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610031466.7A CN105679632B (zh) 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/187,437 US8617411B2 (en) 2011-07-20 2011-07-20 Methods and apparatus for atomic layer etching
US13/187,437 2011-07-20
PCT/US2012/046137 WO2013012620A1 (en) 2011-07-20 2012-07-11 Atomic layer etching using metastables formed from an inert gas

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610031466.7A Division CN105679632B (zh) 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻

Publications (2)

Publication Number Publication Date
CN103748658A CN103748658A (zh) 2014-04-23
CN103748658B true CN103748658B (zh) 2016-06-08

Family

ID=47556072

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201280035911.7A Active CN103748658B (zh) 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻
CN201610031466.7A Active CN105679632B (zh) 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610031466.7A Active CN105679632B (zh) 2011-07-20 2012-07-11 使用从惰性气体形成的亚稳态体的原子层蚀刻

Country Status (7)

Country Link
US (2) US8617411B2 (zh)
JP (2) JP6203716B2 (zh)
KR (1) KR101920527B1 (zh)
CN (2) CN103748658B (zh)
SG (1) SG10201605726PA (zh)
TW (2) TWI591716B (zh)
WO (1) WO2013012620A1 (zh)

Families Citing this family (482)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9475709B2 (en) 2010-08-25 2016-10-25 Lockheed Martin Corporation Perforated graphene deionization or desalination
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
JP2013235912A (ja) * 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
US10203295B2 (en) 2016-04-14 2019-02-12 Lockheed Martin Corporation Methods for in situ monitoring and control of defect formation or healing
US9834809B2 (en) 2014-02-28 2017-12-05 Lockheed Martin Corporation Syringe for obtaining nano-sized materials for selective assays and related methods of use
US9610546B2 (en) 2014-03-12 2017-04-04 Lockheed Martin Corporation Separation membranes formed from perforated graphene and methods for use thereof
US10653824B2 (en) 2012-05-25 2020-05-19 Lockheed Martin Corporation Two-dimensional materials and uses thereof
US9744617B2 (en) 2014-01-31 2017-08-29 Lockheed Martin Corporation Methods for perforating multi-layer graphene through ion bombardment
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9048190B2 (en) * 2012-10-09 2015-06-02 Applied Materials, Inc. Methods and apparatus for processing substrates using an ion shield
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
TW201504140A (zh) 2013-03-12 2015-02-01 Lockheed Corp 形成具有均勻孔尺寸之多孔石墨烯之方法
WO2014159043A1 (en) * 2013-03-13 2014-10-02 Lockheed Martin Corporation Nanoporous membranes and methods for making the same
US9572918B2 (en) 2013-06-21 2017-02-21 Lockheed Martin Corporation Graphene-based filter for isolating a substance from blood
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
CA2938305A1 (en) 2014-01-31 2015-08-06 Lockheed Martin Corporation Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer
SG11201606289RA (en) 2014-01-31 2016-08-30 Lockheed Corp Perforating two-dimensional materials using broad ion field
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
JP2017512129A (ja) 2014-03-12 2017-05-18 ロッキード・マーチン・コーポレーション 有孔グラフェンから形成された分離膜
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
CN105448635B (zh) * 2014-08-28 2018-01-09 北京北方华创微电子装备有限公司 原子层刻蚀装置及采用其的原子层刻蚀方法
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
KR20170095804A (ko) 2014-09-02 2017-08-23 록히드 마틴 코포레이션 이차원 막 소재에 기반을 둔 혈액 투석 및 혈액 여과 막과 이를 이용하는 방법
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
CN105586566B (zh) * 2014-11-03 2018-05-25 北京北方华创微电子装备有限公司 一种反应腔室及半导体加工设备
US9609730B2 (en) * 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9396961B2 (en) * 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9396956B1 (en) 2015-01-16 2016-07-19 Asm Ip Holding B.V. Method of plasma-enhanced atomic layer etching
TWI632607B (zh) 2015-01-26 2018-08-11 東京威力科創股份有限公司 基板之高精度蝕刻用方法及系統
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10128082B2 (en) 2015-07-24 2018-11-13 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques to treat substrates using directional plasma and point of use chemistry
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
JP2018528144A (ja) 2015-08-05 2018-09-27 ロッキード・マーチン・コーポレーション グラフェン系材料の穿孔可能なシート
WO2017023377A1 (en) 2015-08-06 2017-02-09 Lockheed Martin Corporation Nanoparticle modification and perforation of graphene
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9972504B2 (en) * 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9706634B2 (en) 2015-08-07 2017-07-11 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques to treat substrates using directional plasma and reactive gas
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US10096487B2 (en) * 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
GB201515622D0 (en) 2015-09-03 2015-10-21 Oxford Instr Nanotechnology Tools Ltd Cyclical plasma etching
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9691618B2 (en) 2015-11-13 2017-06-27 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices including performing an atomic layer etching process
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9991128B2 (en) * 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US9831099B2 (en) 2016-02-12 2017-11-28 Tokyo Electron Limited Method and apparatus for multi-film deposition and etching in a batch processing system
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
TWI658512B (zh) * 2016-02-23 2019-05-01 東京威力科創股份有限公司 原子層蝕刻用方法與系統
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
WO2017159512A1 (ja) 2016-03-17 2017-09-21 日本ゼオン株式会社 プラズマエッチング方法
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
WO2017180134A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Methods for in vivo and in vitro use of graphene and other two-dimensional materials
WO2017180135A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Membranes with tunable selectivity
SG11201809015WA (en) 2016-04-14 2018-11-29 Lockheed Corp Two-dimensional membrane structures having flow passages
CA3020686A1 (en) 2016-04-14 2017-10-19 Lockheed Martin Corporation Method for treating graphene sheets for large-scale transfer using free-float method
SG11201809016QA (en) 2016-04-14 2018-11-29 Lockheed Corp Selective interfacial mitigation of graphene defects
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10177002B2 (en) 2016-04-29 2019-01-08 Applied Materials, Inc. Methods for chemical etching of silicon
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
WO2018111333A1 (en) 2016-12-14 2018-06-21 Mattson Technology, Inc. Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP6820775B2 (ja) * 2017-03-17 2021-01-27 株式会社日立ハイテク エッチング方法及びプラズマ処理装置
DE102017106018A1 (de) * 2017-03-21 2018-09-27 Osram Oled Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und ein optoelektronisches bauelement
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US9991129B1 (en) * 2017-05-23 2018-06-05 Applied Materials, Inc. Selective etching of amorphous silicon over epitaxial silicon
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
JP6929148B2 (ja) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
KR102016927B1 (ko) 2017-11-01 2019-10-21 한국기초과학지원연구원 원자층 연마 방법 및 이를 위한 연마 장치
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
EP3776636A4 (en) 2018-03-30 2021-12-22 Lam Research Corporation ATOMIC LAYER ENGRAVING AND SMOOTHING OF REFRACTORY METALS AND OTHER HIGH SURFACE BOND ENERGY MATERIALS
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
JP7133975B2 (ja) * 2018-05-11 2022-09-09 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11205524B2 (en) 2018-05-17 2021-12-21 Georgia Tech Research Corporation Integrated atomic beam collimator and methods thereof
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
CN112673456A (zh) * 2018-09-10 2021-04-16 朗姆研究公司 使用亚稳的活化自由基物质的原子层处理工艺
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
WO2020121540A1 (ja) 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
US20210335625A1 (en) * 2019-02-08 2021-10-28 Hitachi High-Technologies Corporation Dry etching apparatus and dry etching method
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20210123409A (ko) 2019-02-28 2021-10-13 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US10535524B1 (en) 2019-03-11 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
CN114127898A (zh) 2019-06-06 2022-03-01 应用材料公司 以高能量低剂量等离子体后处理氮化硅基的介电膜的方法
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
RU2722690C1 (ru) * 2019-11-29 2020-06-03 Федеральное государственное бюджетное образовательное учреждение высшего образования "ДАГЕСТАНСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ" Устройство для получения широкоапертурного низкоэнергетичного потока ионов
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
CN111243944A (zh) * 2020-01-21 2020-06-05 长江存储科技有限责任公司 晶圆的处理方法和晶圆的处理系统
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
JP7394665B2 (ja) 2020-03-11 2023-12-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102521388B1 (ko) 2020-04-21 2023-04-14 주식회사 히타치하이테크 플라스마 처리 장치
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US20220108874A1 (en) * 2020-10-06 2022-04-07 Applied Materials, Inc. Low current high ion energy plasma control system
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
KR102585950B1 (ko) * 2021-05-24 2023-10-05 성균관대학교산학협력단 그리드 및 기판의 전위 제어를 이용한 건식 식각 방법
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
JPWO2024079776A1 (zh) 2022-10-11 2024-04-18

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756794A (en) * 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
US5205905A (en) * 1990-05-30 1993-04-27 Toyoda Gosei Co., Ltd. Dry etching method for semiconductor

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171133A (ja) * 1985-01-25 1986-08-01 Hitachi Ltd ドライエツチング方法
JPH02249231A (ja) * 1989-03-23 1990-10-05 Matsushita Electric Ind Co Ltd ドライエッチング方法
DE4018954A1 (de) * 1989-06-15 1991-01-03 Mitsubishi Electric Corp Trockenaetzgeraet
JPH03133128A (ja) * 1989-10-19 1991-06-06 Res Dev Corp Of Japan ディジタル・エッチング方法
JP2924013B2 (ja) * 1989-11-13 1999-07-26 日本電気株式会社 ドライエッチング方法
US5002632A (en) 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JPH04280428A (ja) * 1991-03-08 1992-10-06 Hitachi Ltd ドライエッチング方法およびその装置
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP3217844B2 (ja) * 1992-03-27 2001-10-15 理化学研究所 エッチングダメージ防止方法
GB2269785A (en) 1992-08-14 1994-02-23 Sharp Kk Etching a surface of a semiconductor
JPH06252108A (ja) * 1993-02-25 1994-09-09 Hitachi Ltd 表面処理方法および装置
US5976992A (en) 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
JP3408311B2 (ja) * 1994-03-25 2003-05-19 靖浩 堀池 デジタルエッチング方法及び装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JPH07335612A (ja) 1994-06-13 1995-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0831804A (ja) * 1994-07-19 1996-02-02 Hitachi Ltd ケミカルコリメータ
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
JP3237743B2 (ja) * 1996-02-15 2001-12-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP3319285B2 (ja) 1996-06-05 2002-08-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6464891B1 (en) * 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
JP4057198B2 (ja) * 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
KR100367662B1 (ko) * 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
KR100382720B1 (ko) * 2000-08-30 2003-05-09 삼성전자주식회사 반도체 식각 장치 및 이를 이용한 반도체 소자의 식각 방법
JP2002289584A (ja) 2001-03-26 2002-10-04 Ebara Corp 表面処理方法
JP2002289585A (ja) * 2001-03-26 2002-10-04 Ebara Corp 中性粒子ビーム処理装置
US6448192B1 (en) * 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US20040173316A1 (en) * 2003-03-07 2004-09-09 Carr Jeffrey W. Apparatus and method using a microwave source for reactive atom plasma processing
KR100555849B1 (ko) * 2003-11-27 2006-03-03 주식회사 셈테크놀러지 중성입자빔 처리장치
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
JP4633425B2 (ja) * 2004-09-17 2011-02-16 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US8173036B2 (en) * 2005-03-02 2012-05-08 Tokyo Electron Limited Plasma processing method and apparatus
JP4852261B2 (ja) * 2005-05-17 2012-01-11 キヤノンアネルバ株式会社 シリコン化合物の形成方法
US20090029564A1 (en) * 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
KR100653073B1 (ko) * 2005-09-28 2006-12-01 삼성전자주식회사 기판처리장치와 기판처리방법
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
US7416989B1 (en) * 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
US8053372B1 (en) * 2006-09-12 2011-11-08 Novellus Systems, Inc. Method of reducing plasma stabilization time in a cyclic deposition process
US7871678B1 (en) * 2006-09-12 2011-01-18 Novellus Systems, Inc. Method of increasing the reactivity of a precursor in a cyclic deposition process
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP4971930B2 (ja) 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
CN102396052B (zh) * 2009-02-06 2014-06-18 佳能安内华股份有限公司 等离子体处理装置、等离子体处理方法以及包括待处理基板的元件的制造方法
US8017198B2 (en) * 2009-04-24 2011-09-13 Ovshinsky Innovation Llc Thin film deposition via charged particle-depleted plasma achieved by magnetic confinement
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
JP5006415B2 (ja) * 2010-01-12 2012-08-22 キヤノンアネルバ株式会社 酸化膜除去のための基板洗浄処理方法
KR101080604B1 (ko) * 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
JP4982582B2 (ja) * 2010-03-31 2012-07-25 株式会社東芝 マスクの製造方法
US8828883B2 (en) * 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
US9111728B2 (en) * 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US9177756B2 (en) * 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US9034773B2 (en) * 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8728951B2 (en) * 2012-07-31 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Method and system for ion-assisted processing
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US20140271097A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20150200042A1 (en) * 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
US9609730B2 (en) * 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756794A (en) * 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
US5205905A (en) * 1990-05-30 1993-04-27 Toyoda Gosei Co., Ltd. Dry etching method for semiconductor

Also Published As

Publication number Publication date
US8617411B2 (en) 2013-12-31
US20130023125A1 (en) 2013-01-24
CN105679632B (zh) 2018-06-01
TW201320184A (zh) 2013-05-16
CN105679632A (zh) 2016-06-15
JP6338754B2 (ja) 2018-06-06
SG10201605726PA (en) 2016-09-29
US10014192B2 (en) 2018-07-03
TWI630656B (zh) 2018-07-21
TWI591716B (zh) 2017-07-11
US20150206774A1 (en) 2015-07-23
JP6203716B2 (ja) 2017-09-27
KR20140051962A (ko) 2014-05-02
WO2013012620A1 (en) 2013-01-24
TW201724261A (zh) 2017-07-01
KR101920527B1 (ko) 2018-11-20
JP2014522104A (ja) 2014-08-28
JP2017228791A (ja) 2017-12-28
CN103748658A (zh) 2014-04-23

Similar Documents

Publication Publication Date Title
CN103748658B (zh) 使用从惰性气体形成的亚稳态体的原子层蚀刻
JP6827462B2 (ja) 基板を処理するための装置、システム及び方法
CN107293468B (zh) 离子束蚀刻系统
KR102107256B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN108369924B (zh) 使用倾角离子束填充孔穴的设备和方法
US10515788B2 (en) Systems and methods for integrated resputtering in a physical vapor deposition chamber
US9640754B2 (en) Process for producing magnetoresistive effect element
US20100133235A1 (en) Dry etching apparatus and dry etching method
Darnon Plasma etching in microelectronics
KR102720049B1 (ko) 에칭 방법 및 에칭 처리 장치
KR20140117074A (ko) 기판 처리 방법 및 기판 처리 장치
JP2002057122A (ja) 半導体集積回路装置の製造方法
US20060234498A1 (en) Method of performing a surface treatment respectively on the via and the trench in a dual damascene process

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant