CN102239540B - 制造衬底的方法 - Google Patents
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Abstract
一种制造衬底的方法包括在衬底上形成第一隔开特征及第二隔开特征。所述第一隔开特征具有在组合物上与所述第二隔开特征的高度上最外区域不同的高度上最外区域。所述第一隔开特征及第二隔开特征相互交替。从所述衬底移除每隔一个第一特征,且形成成对紧邻的第二特征,其与所述第一特征中的剩余者中的个别者交替。在此移除动作之后,经由掩模图案处理所述衬底,所述掩模图案包含与所述第一特征中的剩余者中的个别者交替的所述成对紧邻的第二特征。还揭示其它实施例。
Description
技术领域
本文中所揭示的实施例涉及制造衬底的方法,例如,如可用于集成电路的制造中的衬底。
背景技术
集成电路通常形成于例如硅晶片或其它半导电材料的半导体衬底上。大体上,将半导电、导电或绝缘的各种材料的层用于形成集成电路。例如,使用各种工艺来对各种材料进行掺杂、离子植入、沉积、蚀刻、生长等。半导体处理中的持续目标为继续争取减小个别电子组件的尺寸,借此允许实现更小且更密集的集成电路。
用于图案化且处理半导体衬底的一种技术为光刻。此技术包括通常被称为光致抗蚀剂的可图案化掩模层的沉积。这些材料可经处理以修改其在某些溶剂中的溶解度,且借此可容易地用于在衬底上形成图案。举例来说,光致抗蚀剂层的部分可经由例如掩模或光掩模的辐射图案化工具中的开口而暴露于光化能量,以与沉积后状态中的溶解度相比改变暴露区域对比未暴露区域的溶剂溶解度。此后,取决于光致抗蚀剂的类型,可移除暴露或未暴露区域,借此在衬底上留下光致抗蚀剂的掩模图案。在经掩蔽部分旁的下层衬底的邻近区可例如通过蚀刻或离子植入而受到处理以实现对邻近于掩模材料的衬底的所要处理。在某些例子中,利用光致抗蚀剂的多个不同层及/或光致抗蚀剂与非辐射敏感掩模材料的组合。
特征尺寸的连续减小对用于形成特征的技术提出不断增加的要求。举例来说,光刻通常用于形成图案化特征,例如,导电线路。通常被称为“间距”的概念可用于描述特征连同紧邻于其的间隔的尺寸。间距可经定义为在直线横截面中的重复图案的两个邻近特征中的相同点之间的距离,借此包括特征的最大宽度及到下一紧邻的特征的间隔。然而,归因于例如光学器件及光或辐射波长的因素,光刻技术倾向于具有最小间距,当低于其时特定光刻技术无法可靠地形成特征。因此,光刻技术的最小间距为使用光刻时的持续特征尺寸减小的障碍。
间距加倍或间距倍增为一种用于将光刻技术的能力扩展超过其最小间距的经提议方法。此方法通常通过沉积隔片形成层以具有小于最小的可能的光刻特征尺寸的厚度的横向厚度来形成比最小光刻分辨率更窄的特征。隔片形成层通常经各向异性蚀刻以形成次光刻特征,且接着从衬底蚀刻以最小光刻特征尺寸形成的特征。
使用间距实际上减半的此技术,间距的此减小常规上被称为间距“加倍”。更一般来说,“间距倍增”包含两倍或两倍以上的间距增加,且也包含除整数以外的分数值的间距增加。因此,常规上,间距乘以某因子的“倍增”实际上涉及使间距以所述因子减小。
附图说明
图1为根据本发明的一实施例的工艺中的衬底的图解剖视图。
图2为在图1的处理步骤之前的处理步骤的图1衬底的视图。
图3为在由图1所示的处理步骤之后的处理步骤的图1衬底的视图。
图4为在由图3所示的处理步骤之后的处理步骤的图3衬底的视图。
图5为在由图4所示的处理步骤之后的处理步骤的图4衬底的视图。
图6为在由图5所示的处理步骤之后的处理步骤的图5衬底的视图。
图7为在由图6所示的处理步骤之后的处理步骤的图6衬底的视图。
图8为在由图7所示的处理步骤之后的处理步骤的图7衬底的视图。
图9为在由图8所示的处理步骤之后的处理步骤的图8衬底的视图。
图10为在由图9所示的处理步骤之后的处理步骤的图9衬底的视图。
图11为根据本发明的一实施例的工艺中的另一衬底的图解剖视图。
图12为在由图11所示的处理步骤之后的处理步骤的图11衬底的视图。
图13为在由图12所示的处理步骤之后的处理步骤的图12衬底的视图。
图14为在由图13所示的处理步骤之后的处理步骤的图13衬底的视图。
图15为在由图14所示的处理步骤之后的处理步骤的图14衬底的视图。
图16为在由图15所示的处理步骤之后的处理步骤的图15衬底的视图。
图17为根据本发明的一实施例的工艺中的另一衬底的图解剖视图。
图18为在由图17所示的处理步骤之后的处理步骤的图17衬底的视图。
图19为在由图18所示的处理步骤之后的处理步骤的图18衬底的视图。
图20为在由图19所示的处理步骤之后的处理步骤的图19衬底的视图。
图21为在由图20所示的处理步骤之后的处理步骤的图20衬底的视图。
图22为在由图21所示的处理步骤之后的处理步骤的图21衬底的视图。
图23为根据本发明的一实施例的工艺中的另一衬底的图解剖视图。
图24为在由图23所示的处理步骤之后的处理步骤的图23衬底的视图。
图25为在由图24所示的处理步骤之后的处理步骤的图24衬底的视图。
图26为在由图25所示的处理步骤之后的处理步骤的图25衬底的视图。
图27为在由图26所示的处理步骤之后的处理步骤的图26衬底的视图。
图28为在由图27所示的处理步骤之后的处理步骤的图27衬底的视图。
图29为在由图28所示的处理步骤之后的处理步骤的图28衬底的视图。
图30为在由图29所示的处理步骤之后的处理步骤的图29衬底的视图。
图31为在由图30所示的处理步骤之后的处理步骤的图30衬底的视图。
图32为根据本发明的一实施例的工艺中的另一衬底的图解剖视图。
图33为在由图32所示的处理步骤之后的处理步骤的图32衬底的视图。
图34为在由图33所示的处理步骤之后的处理步骤的图33衬底的视图。
图35为在由图34所示的处理步骤之后的处理步骤的图34衬底的视图。
图36为在由图35所示的处理步骤之后的处理步骤的图35衬底的视图。
图37为在由图36所示的处理步骤之后的处理步骤的图36衬底的视图。
具体实施方式
首先参看图1至图10描述根据本发明的制造衬底的方法的一些实施例(例如,在形成集成电路时)。参看图1,衬底(例如,半导体衬底)大体上以参考数字10指示。在此文档的上下文中,术语“半导体衬底”或“半导电衬底”经定义以意味着包含半导电材料的任何构造,其包括(但不限于)例如半导电晶片的块体半导电材料(单独或在其上包含其它材料的组合件中),及半导电材料层(单独或在包含其它材料的组合件中)。术语“衬底”指代任何支撑结构,其包括(但不限于)以上所述的半导电衬底。
衬底10经描绘为包含材料12,最终将经由形成于其上的掩模图案处理材料12。材料12可为均质或非均质的,例如,包含多个不同组合物区域及/或层。隔开第一特征14已形成于衬底12上。预期任何适当材料,且不管其是均质还是非均质的。在此文档的上下文中,“隔开”指代如与垂直或其它方向相对的横向方向。隔开第一特征14可通过任何现存或有待开发的方式而图案化/形成,其中使用光致抗蚀剂(不管是由单个或多图案光刻引起的正型、负型还是双色调抗蚀剂)的光刻图案化为一实例。此外,隔开第一特征14可由以下所述的任何技术形成。在一个实例中,隔开第一特征14可呈伸长线的形式,例如在衬底的至少某部分上相互平行延伸,如将在俯视图(图中未展示)中看到的。
此外在一个实施例中,隔开第一特征14可由对较宽特征的横向蚀刻/修整引起。举例来说,图2描绘在图1的处理步骤之前的处理步骤的衬底10。此经展示为包含隔开的掩模特征16,(例如)其包含已以具有间距“P”的重复图案制造于衬底12上的光致抗蚀剂、实质上由所述光致抗蚀剂组成或由所述光致抗蚀剂组成。间距P可等于、大于或小于用以制造衬底10的最小光刻分辨率。无论如何,图2的隔开掩模特征16已被横向修整以减小其相应宽度以产生包含隔开第一特征14的图1的实例构造。此情况可由各向同性蚀刻进行,所述各向同性蚀刻从隔开掩模特征16的侧面及顶部近似相等地移除材料。或者,可使用化学处理及条件,其倾向于与从相应顶部相比从隔开掩模特征16的横向侧面蚀刻更多材料。或者,可使用化学处理及条件,其倾向于与从横向侧面相比从隔开掩模特征16的顶部蚀刻更多材料。
举例来说,由图1所描绘的构造可通过在感应耦合反应器内等离子蚀刻图2的衬底而得到。将实现基本上各向同性蚀刻(其中隔开掩模特征16的材料为光致抗蚀剂及/或其它包含有机物的材料)的实例蚀刻参数为从约2mTorr到约50mTorr的压力、从约0℃到约110℃的衬底温度、从约150瓦特到约500瓦特的电源功率,及小于或等于约25伏特的偏压。实例蚀刻气体为从约20sccm到约100sccm的Cl2与从约10sccm到约50sccm的O2的组合。在隔开掩模特征16的材料包含光致抗蚀剂的情况下,此将以每秒约0.2纳米到每秒约3纳米的速率各向同性地蚀刻掩模特征16。虽然此实例蚀刻为基本上各向同性的,与仅其单个上表面经暴露时相比,当两个侧面经横向暴露时,隔开掩模特征的较大横向蚀刻将发生。
如果与垂直蚀刻相比更多横向蚀刻为所要的,则在感应耦合反应器中的实例参数范围包括从约2mTorr到约20mTorr的压力、从约150瓦特到约500瓦特的电源功率、小于或等于约25伏特的偏压、从约0℃到约110℃的衬底温度、从约20sccm到约100sccm的Cl2及/或HBr流、从约5sccm到约20sccm的O2流,及从约80sccm到约120sccm的CF4流。
可能希望所陈述的蚀刻提供与从侧面相比的从隔开掩模特征顶部更大的移除,(例如)以实现相等高度及宽度减小或比宽度减小更多的高度减小。用于在垂直方向而非横向方向上实现更大蚀刻速率的实例参数包括从约2mTorr到约20mTorr的压力、从约0℃到约100℃的温度、从约150瓦特到约300瓦特的电源功率、大于或等于约200伏特的偏压、从约20sccm到约100sccm的Cl2及/或HBr流,及从约10sccm到约20sccm的O2流。
实例性的图1及图2实施例将相应特征描绘为在所描绘的横截面中相对于彼此具有相等形状及宽度,以及其间的相等间隔。然而,在此实施例或其它实施例中不要求此情况。
参看图3,已沉积材料18作为衬底10的一部分,且将从其形成各向异性蚀刻隔片。此材料可在蚀刻上不同于隔开第一特征14的材料,且可为导电、半导电或绝缘的,包括其任何组合。实例包括二氧化硅、氮化硅、有机抗反射涂层、无机抗反射涂层、多晶硅、钛或氮化钛,包括其任何组合。
参看图4,已各向异性蚀刻材料18以在隔开第一特征14的侧壁上形成隔片20。
参看图5,已从衬底10移除隔开第一特征14(图中未展示)以形成包含隔片20的隔开第二特征。在例如隔开第一特征14的材料包含光致抗蚀剂及/或其它有机材料的情况下,O2等离子蚀刻将从隔片20之间移除材料14。无论如何,材料14的移除可能蚀刻或可能不蚀刻隔片20的一些部分,图5中展示可忽略的此移除以形成隔开第二特征20。图1及图4描绘一个实例实施例,其中第一特征14与第一特征中的每一邻近者等距隔开(图1),且第二特征20不与第二特征中的每一邻近者等距隔开。预期替代实施例。举例来说且仅借助于实例,第一特征14可与第一特征中的每一邻近者等距隔开,且第二特征20可与第二特征中的每一邻近者等距隔开。为了实现继续论述的目的,图5描绘第二特征20中的两个紧邻者的相应最接近对21,其具有在对21的每两特征之间的相应间隔。
参看图6,第一材料22已沉积于隔开第二特征20上,且可具有不同于隔开第二特征20的组合物的某组合物。材料22可能为或可能并非为均质的。实例材料包括以上针对隔片形成材料18所述的材料中的任一者。在图6实施例中,第一材料22具有非平面最外表面23,且已经沉积以完全填充第二特征20中的两个紧邻特征的最接近对21之间的空间。
参看图7,第二材料24已沉积于第一材料23上,且具有不同于第一材料22的组合物且不同于隔开第二特征20的组合物的某组合物。第二材料24具有平面最外表面25。此最外表面可(例如)由材料24以液体填充方式的固有沉积引起,或由一个或一个以上保形层的沉积随后接着对其的某种回抛光(polish-back)或回蚀引起。实例第二材料24包括光致抗蚀剂及其它聚合物,例如,聚苯乙烯、聚甲基丙烯酸甲酯及聚硅氧烷。材料24可能为或可能并非为均质的。
参看图8,已移除第二材料24的仅一部分以暴露第一材料22,且形成收纳于第一材料22上的隔开第二材料30的区域。可由技术人员选择任何适当蚀刻技术及条件。在处理期间可蚀刻或可不蚀刻材料22的一些部分以产生图8的构造。
参看图9,已从隔开第二材料30之间蚀刻第一材料22,且已形成包含收纳于第一材料22上的隔开第二材料30的隔开第三特征32。第三特征32与第二特征20隔开。技术人员可选择任何适当的大体上各向异性蚀刻化学处理及条件用于产生图9的构造。图9描绘一个实例实施例,其中掩模图案35已形成于衬底12上且其包含隔开第二特征20及隔开第三特征32。此图还描绘一实例实施例,其中成对21的紧邻的隔开第二特征20与隔开第三特征32中的个别者交替。
例如,可进行以上处理以引起可能为或可能并非次光刻的间距倍增。无论如何,图1至图9实施例描绘掩模图案35(图9),其已经形成以具有为图2中的隔开掩模特征16的间距“P”的三分之一(为3的整数因子)的间距。图1至图9中任何程度的间距减小(包括非整数的分数减小)或其它方式当然将很大程度上基于隔开特征的可发生的任何横向修整(例如在由图1的衬底形成图2的衬底的过程中)的程度结合用以产生特征及在特征之间的间隔的沉积层的厚度来确定。举例来说,图3中的材料18的沉积厚度与用以产生图4的蚀刻技术相结合地影响隔开第二特征20的宽度。类似地,第一材料22的沉积厚度在显著程度上确定在第二特征20与第三特征32之间的间隔。此外且无论如何,隔开第二特征20及/或隔开第三特征32中的一些或所有可在形成图9构造之后经进一步横向修整。此外,例如,可横向修整图4及/或图5的隔开第二特征20。
将包含隔开第二特征及隔开第三特征的掩模图案用于经由此掩模图案处理在高度上收纳于其下的衬底。此处理可构成任何现存或有待开发技术,其中蚀刻及/或离子植入为特定实例。图10描绘使用此处理的一个实例,其中在蚀刻到衬底10的材料12中时已将掩模图案35用作蚀刻掩模。
接着参看图11至图16描述额外实施例。图11描绘在处理序列上对应于图6的工艺的替代实施例衬底片段10a。已在适当的地方利用来自首先描述的实施例的相同数字,其中构造差异以后缀“a”或以不同数字指示。当后缀“a”指示不同构造时,用于这些构造的实例材料与用于以上实施例中的无后缀“a”的相同数字的材料相同。在图11中,与由图6中的材料22的沉积所描绘相比,第一材料22a已沉积得更薄得多,从而不完全填充在第二特征20中的两个紧邻特征的最接近对21之间的空间。
参看图12,第二材料24a已形成于第一材料22a上。图11及图12描绘一个实施例,其中第一材料22a已沉积到最小厚度T,所述最小厚度T小于第二材料24的厚度且小于隔开第二特征20的最大宽度。
参看图13,已移除第二材料24a的仅一部分以暴露第一材料22a且形成收纳于第一材料22a上的隔开第二材料30a。
参看图14,已从隔开第二材料30a之间蚀刻第一材料22a,且已形成包含收纳于第一材料22a上的隔开第二材料30a的第三隔开特征32a。第三特征32a与第二特征20隔开。因此,图14描绘实例掩模图案35a,其中第三特征32a中的一者收纳于第二特征20中的邻近特征的每一者之间。可经由图14的掩模图案35a(例如)通过蚀刻、离子植入及/或如上所述的其它工艺处理衬底12,所述掩模图案35a包含隔开第二特征20及隔开第三特征32a。在图14中,掩模图案35a中的隔开第三特征32a不具有相同尺寸/形状。
图15描绘用以产生掩模图案35aa的衬底10a的额外处理。此可通过在图14的第一材料22a的蚀刻之后横向修整第三特征32a的宽度而形成。在形成第三特征之后的一个实施例中,可在处理掩模图案下的衬底材料之前移除第三特征中的仅一些特征的全部以形成掩模图案。举例来说,图15描绘横向修整收纳于第二特征20中的最远隔开特征之间的第三特征32a,所述横向修整还已引起对收纳于邻近第二特征20的最接近对21之间的第三特征32a的完全移除。
参看图16,已经由掩模图案35aa处理衬底10a。图16中所描绘的实例处理为离子植入的处理,其形成植入区域36。
本发明的一实施例包含制造衬底的方法,其包括在衬底上形成第一隔开特征及第二隔开特征。举例来说,图14中的特征32a可被视为隔开第一特征,且图14中的特征20可被视为隔开第二特征。第一隔开特征具有在组合物上不同于第二隔开特征的高度上最外区域的高度上最外区域。第一隔开特征及第二隔开特征相互交替。仅举例来说,图14描绘此构造,其中隔开特征32a被视为第一隔开特征且隔开特征20被视为第二隔开特征。无论如何,第二特征可能为或可能并非均质的。在一个实施例中,第一特征包含收纳于不同组合物第一材料上的第二材料。在一个实施例中,第二特征具有不同于第一材料及第二材料的组合物的组合物。
在一个实施例中,从衬底移除每隔一个第一特征,且形成与第一特征中的剩余者中的个别者交替的成对紧邻的第二特征。仅举例来说,图15描绘此实施例,其中成对21的紧邻的第二特征20与特征32a中的剩余者中的个别者交替。在一个实施例中,移除包含蚀刻。举例来说,在产生例如图15中所示的衬底的过程中的处理可通过相对于第二特征20选择性横向蚀刻第一材料及第二材料以从衬底10a移除每隔一个第一特征32a而发生。此还已减小特征32a中的剩余者的宽度,借此形成与特征32a中的剩余者中的个别者交替的成对21的紧邻的第二特征20。可由技术人员选择化学处理及条件以实现此蚀刻,其中在由图2的衬底产生图1的衬底中的上述实例仅为实例。在(例如)移除的动作是通过蚀刻进行的一个实施例中,在蚀刻的动作期间在特征32a上不收纳蚀刻掩模。在一个实施例中,在此蚀刻期间在衬底上的任何位置均不收纳蚀刻掩模。
在从衬底移除每隔一个第一特征之后,经由掩模图案处理所述衬底,所述掩模图案包含与所述第一特征中的所述剩余者中的个别者交替的成对紧邻的第二特征。仅举例来说,图16描绘关于掩模图案35aa的此实例处理。
接着参看图17至图22关于衬底片段10b描述制造衬底的方法的额外实施例。在适当的地方利用关于上述实施例的相同数字,其中构造的差异用后缀“b”或用不同数字指示。当后缀“b”指示不同构造时,用于这些构造的实例材料与用于以上实施例中的无后缀“b”的相同数字的材料相同。图17描绘以上图6及图11的处理的替代处理,且其中可变材料40已形成于隔开第二特征20上。可变材料40与其与之形成界面的某些材料选择性或均一地相互作用。可变材料40可被浇铸于预先图案化表面上(例如如图所示)且可为保形或非保形的。经由旋转浇铸、浸渍浇铸(dip-casting)、滴落浇铸(drop-casting)或类似浇铸的浇铸为实例。将用来自隔开第二特征的材料改变可变材料,以在隔开第二特征的侧壁上形成经改变材料。仅举例来说,经改变材料可在沉积可变材料后即刻自发形成,或(例如)经由热、光子、电子、离子(其包括基于酸的化学处理)处理随后被激活。因此,改变可在沉积期间及/或在沉积之后发生。在一个实施例中,直到可变材料的沉积完成之后才发生改变。此外,改变在限制试剂或均衡条件的状况下可为自限制的,或在反应物过量的情况下在动力学上停止。可变材料40可具有平面最外表面或非平面最外表面,其中图17中描绘了实例平面最外表面42。可变材料40可能为或可能并非均质的。
材料40可类似于可从科莱恩国际有限公司(Clariant International,Ltd.)购买到的一类材料,如所谓的“AZ R”材料,例如被指定为AZ R200TM、AZ R500TM及AZ R600TM的材料。“AZ R”材料含有有机组合物,其在暴露于从化学放大抗蚀剂释放的酸时即刻交联。因此,例如,这些材料构成实例可变材料,其中隔开第二特征20的材料包含化学放大抗蚀剂。更具体地说,“AZ R”材料可涂布于光致抗蚀剂上,且随后可在从约100℃到约120℃的温度下烘烤抗蚀剂以将酸从抗蚀剂扩散到可变材料中,以在最接近抗蚀剂的可变材料的区域内形成化学交联。材料的邻近于抗蚀剂的部分因此相对于材料的并非充分接近于抗蚀剂的其它部分而选择性硬化。材料接着可被暴露于相对于硬化部分选择性移除非硬化部分的条件。此移除可利用(例如)去离子水中的10%异丙醇或由科莱恩国际有限公司作为“SOLUTION CTM”销售的溶液来完成。利用“AZ R”材料的工艺有时被视为RELACS(由化学微缩辅助的分辨率增强光刻,Resolution EnhancementLithography Assisted by Chemical Shrink)工艺的实例。
使用“AZ R”材料的挑战在于其在组合物上可足够类似于光致抗蚀剂,以致于可能难以相对于经硬化“AZ R”材料而选择性移除光致抗蚀剂。在一个实施例中,可变材料40与“AZ R”材料的类似之处可在于其可包含类似或相同的有机组合物,在烘烤衬底时,所述有机组合物在暴露于从材料40位于其上的材料20所释放的一种或一者以上物质(例如,酸)时即刻改变(例如,形成交联)。然而,不同于“AZ R”材料,材料40还可含有分散于有机组合物中的一种或一者以上成分,提供此些成分旨在相对于特征20的材料在化学上改变材料40(例如,在可相对于材料40选择性移除特征20的材料的实施例中的光致抗蚀剂)。可分散于材料40的有机组合物中的成分可包括钛、碳、氟、溴、硅及锗中的一者或一者以上。分散于有机组合物中的任何碳可为碳化化合物的一部分,因此其在化学上不同于有机组合物的块体碳(bulk carbon)。任何氟及/或溴可(例如)包含氢氟酸及氢溴酸。在一些实施例中,分散于材料40的有机组合物中的成分包括一种或一者以上无机成分,例如,硅、锗、金属(例如,钛、钨、铂等)及/或含金属化合物(例如,金属氮化物、金属硅化物等)。类似于“AZ R”材料的材料40的成分可被称为“AZ R”型组合物。因此,在一些实施例中,可变材料40可被认为具有分散于有机“AZ R”型组合物中的一种或一者以上无机成分。然而,可变材料40可包含除有机组合物且除“AZ R”型组合物以外的材料,例如如下文所解释。
参看图18,衬底10b已经受引起最接近隔开第二特征20的材料20及40相互扩散的条件。材料20的某物质改变材料40,以形成最接近隔开第二特征20的经改变材料44。因此,能够用来自隔开第二特征的材料改变可变材料,以在隔开第二特征的侧壁上形成经改变材料,例如如图18中所示。在一个实施例中,所述改变改变可变材料40的邻近于隔开第二特征20中的每一者的一部分以形成经改变材料44,同时使可变材料的在隔开第二特征远端的部分维持不变。图18还描绘一实施例,其中已在高度上在隔开第二特征20上方形成经改变材料44。经改变材料44可能为或可能并非为均质的。
在一些实施例中,隔开第二特征20的材料包含化学放大光致抗蚀剂,且赋予材料40的改变的来自此光致抗蚀剂的物质为酸。可通过在至少约100℃的温度下烘烤半导体衬底10b引起从光致抗蚀剂释放酸。酸形成与材料40的“AZ R”型组合物的交联。可通过修改烘烤时间及烘烤温度中的一者或两者来调整交联的数量及交联从隔开特征20扩展开的距离。
作为隔开特征20包含硅的额外实例,实例可变材料40为耐火金属(例如钛)以引起最终形成包含金属硅化物的经改变材料的反应。仅举例来说,此在第US2007/0049030号美国专利申请公开案中展示且描述。当然还预期至少部分地取决于隔开第二特征的组合物的额外可变材料,且不管其现存还是有待开发。
参看图19,且在一个实施例中,(例如)通过相对于经改变材料44的选择性蚀刻,已移除材料40的未改变以形成材料44的未反应远端部分(图中未展示)。可由技术人员取决于材料40、44及12的组合物而选择适当化学处理及条件。举例来说,关于以上所提到的“AZ R”型组合物,可利用如上所论述的异丙醇及/或SOLUTION CTM完成此移除。在材料40可包含分散于“AZ R”型组合物中的额外成分的情况下,可在移除材料40的未改变区域时简单地冲洗掉这些成分。或者,可用移除额外成分的溶剂移除这些额外成分。举例来说,如果将二氧化硅用作材料40的成分,则可在移除材料40的未改变区域期间利用氢氟酸以确保除未改变区域的“AZ R”型组合物以外还移除未改变区域的二氧化硅。
参看图20,第二材料24b已沉积于经改变材料44上,同时第二材料24b具有不同于经改变材料44的组合物且不同于隔开第二特征20的组合物的某组合物。
参看图21,已移除第二材料24b的仅一部分以暴露经改变材料44且形成隔开第二材料30b。
参看图22,已从隔开第二材料30b之间蚀刻经改变材料44(图中未展示),且已形成包含隔开第二材料30b的隔开第三特征32b。第三特征32b与第二特征20隔开。图22描绘掩模图案35b,其用于经由其(例如)通过蚀刻及/或离子植入及/或其它处理(不管现存还是有待开发)来处理衬底12。
还预期由图19至图21所描绘的实施例的替代实施例。举例来说,图18的材料40可经处理以便移除其仅一部分以暴露经改变材料44且形成隔开可变材料,而非沉积材料24b且移除其部分。举例来说,可移除图18的材料40以直接产生图21的构造,其中材料24b由材料40取代。在形成此隔开可变材料之后,将从隔开可变材料之间蚀刻经改变材料44,且将形成包含隔开可变材料的第三特征,其中第三特征与第二特征隔开。举例来说,可形成图22的构造,其中在已移除图21的材料44之后,材料24b由隔开可变材料40取代。
接着参看图23至图31关于衬底片段10c描述额外实施例。已在适当的地方利用来自上述实施例的相同数字,其中构造差异用后缀“c”或用不同数字指示。当后缀“c”指示不同构造时,用于这些构造的实例材料与用于以上实施例中的无后缀“c”的相同数字的材料相同。参看图23,隔开第一特征16c已形成于衬底12上。可变材料40c已沉积于隔开第一特征16c上。
参看图24,已用来自隔开第一特征16c的材料改变可变材料40c,以在隔开第一特征16c的侧壁上形成经改变材料44c。如上所述,此改变可在可变材料40c的沉积期间及/或在可变材料40c的沉积完成之后发生。在一个实施例中,直到在可变材料40c的沉积完成之后才发生改变,例如基本上如在图23的衬底的处理到图24的处理中所描绘。
参看图25,已从衬底10c移除可变材料40c的未改变的那些部分(图中未展示)。
参看图26,已各向异性地蚀刻经改变材料44c以形成第二隔开特征20c。
参看图27,已从衬底移除隔开第一特征16c(图中未展示),从而留下包含经改变材料44c的第二隔开特征20c的至少一部分。
参看图28,第一材料22c已沉积于隔开第二特征20c上,且其具有不同于隔开第二特征20c的组合物的某组合物且具有非平面最外表面23c。
参看图29,第二材料24c已沉积于第一材料22c上,第二材料24c具有不同于第一材料22c的组合物且不同于隔开第二特征20c的组合物的某组合物。
参看图30,已移除第二材料24c的仅一部分以暴露第一材料22c且形成隔开第二材料30c。
参看图31,已从隔开第二材料30c之间蚀刻第一材料22c,且已形成包含隔开第二材料24c的隔开第三特征32c。第三特征32c与第二特征20c隔开。图23至图31实施例展示了图23中的起始间距Q及图31中的为Q的四分之一(为4的整数因子)的所得间距。取决于经沉积材料的厚度及对经形成特征的任何横向修整,也可产生包括非整数分数倍增的其它倍增。无论如何,图31描绘包含隔开第二特征20c及隔开第三特征32c的实例掩模图案35c,可经由所述掩模图案35c处理衬底12,例如如上文所述。
接着参看图32至图37描述额外实施例。图32描绘在图28的处理序列中的关于衬底片段10d的替代处理。已在适当的地方利用来自上述实施例的相同数字,其中构造差异用后缀“d”或用不同数字指示。当后缀“d”指示不同构造时,用于这些构造的实例材料与用于以上实施例中的无后缀“d”的相同数字的材料相同。
参看图32,图23至图27的处理已发生,其中图23的材料40c可被视为第一可变材料,其形成于隔开第一特征16c上,且用来自隔开第一特征16c的材料改变第一可变材料,以在隔开第一特征16c的侧壁上形成第一经改变材料44c。已从衬底移除隔开第一特征16c且形成包含第一经改变材料44(其在图32中经指定为44d)的隔开第二特征20d。第二可变材料60已形成于隔开第二特征20d上。第二可变材料60的组合物及属性与以上关于可变材料40所描述的组合物及属性相同且至少部分地取决于隔开第二特征20d的组合物。
参看图33,已用来自隔开第二特征的第一经改变材料44d/第一经改变材料20d改变第二可变材料60,以在隔开第二特征20d的侧壁上形成第二经改变材料62。第二经改变材料62的组合物及属性与以上关于经改变材料44所描述的组合物及属性相同。
参看图34,已从衬底相对于第二经改变材料62选择性地移除未改变第二可变材料60(图中未展示)。
参看图35,第三材料24d已形成于第二经改变材料62上。第三材料24d具有不同于第二经改变材料62的组合物且不同于隔开第二特征20d的组合物的某组合物。
参看图36,已移除第三材料24d的仅一部分以暴露第二经改变材料62且形成隔开第三材料30d。
参看图37,已从隔开第三材料30d之间蚀刻第二经改变材料62(图中未展示),且已形成包含隔开第三材料30d的隔开第三特征32d。第三特征32d与第二特征20d隔开。额外横向及/或垂直修整可相对于隔开第二特征及隔开第三特征发生。无论如何,图37描绘包含隔开第二特征20d及隔开第三特征32d的实例掩模图案35d,可经由所述掩模图案35d处理在高度上收纳在掩模图案35d内的衬底材料12,例如如上文所述。
还预期由图34至图37所描绘的处理的替代处理。举例来说,图33的第二可变材料60可经处理以使得移除其仅一部分以暴露第二经改变材料62且形成隔开第二可变材料,而非沉积材料24d且移除其部分。举例来说,可移除图33的材料60以直接产生图36的构造,其中材料24d由第二可变材料60取代。接着,从隔开第二可变材料之间蚀刻第二经改变材料62且形成包含此隔开第二可变材料的隔开第三特征。举例来说,可建立图37的构造,其中第二可变材料取代第三材料24d。
Claims (8)
1.一种制造衬底的方法,其包含:
在衬底上形成隔开第一特征;
在所述隔开第一特征的两侧壁上形成各向异性蚀刻的隔片对;
从所述衬底移除所述隔开第一特征形成多个隔开的隔片对第二特征;
在所述隔开第二特征上沉积第一材料,所述第一材料具有与所述隔开第二特征的组成不同的某组成,所述第一材料具有非平面最外表面;
在所述第一材料上沉积第二材料,所述第二材料具有不同于所述第一材料的组成且不同于所述隔开第二特征的组成的某组成,所述第二材料具有平面最外表面;
移除所述第二材料的仅一部分以暴露所述第一材料且形成收纳于所述第一材料上的隔开第二材料;
在形成所述隔开第二材料之后,从所述隔开第二材料之间蚀刻所述第一材料,且形成包含收纳于第一材料上的隔开第二材料的隔开第三特征,所述第三特征与所述第二特征的隔片对隔开;及
经由包含所述隔开第二特征及所述隔开第三特征的掩模图案处理所述衬底。
2.根据权利要求1所述的方法,其中所述第一特征彼此之间等距隔开,且所述第二特征与所述第二特征的每一邻近者等距隔开。
3.根据权利要求2所述的方法,其中所述第一材料经沉积以不完全填充所述第二特征中的最接近的隔片对之间的空间。
4.一种制造衬底的方法,其包含:
在衬底上形成第一隔开特征及第二隔开特征,所述第一隔开特征的高度上最外区域的的组成所述第二隔开特征的高度上最外区域的组成不同,所述第一隔开特征及第二隔开特征相互交替;
从所述衬底移除每隔一个第一特征,且形成与所述第一特征中的各个剩余者交替的紧邻的第二特征的对;及
在所述移除之后,经由掩模图案处理所述衬底,所述掩模图案包含与所述第一特征中的所述各个剩余者交替的所述紧邻的第二特征的对。
5.根据权利要求4所述的方法,其中所述第一特征包含收纳于第一材料上的与之组成不同的第二材料。
6.根据权利要求5所述的方法,其中所述第二特征具有与所述第一材料及第二材料的组成不同的组成。
7.一种制造衬底的方法,其包含:
在衬底上形成第一隔开特征及第二隔开特征,所述第一隔开特征具有在组成上与所述第二隔开特征的高度上最外区域不同的高度上最外区域,所述第一隔开特征及第二隔开特征相互交替,所述第一隔开特征包含第一材料和第二材料;
相对于所述第二特征选择性地横向蚀刻所述第一材料及所述第二材料,以从所述衬底移除每隔一个第一特征且减小所述第一特征中的剩余者的宽度及形成与所述第一特征中的各个所述剩余者交替的紧邻的第二特征的对;及
在所述横向蚀刻之后,经由掩模图案处理所述衬底,所述掩模图案包含与所述第一特征中的各个所述剩余者交替的所述紧邻的第二特征的对。
8.根据权利要求7所述的方法,其中所述第二材料在所述第一材料上方并且与所述第二材料的组成不同,所述第二特征具有与所述第一材料及第二材料的组成不同的组成。
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