CN102099923A - 使用注入的太阳能电池制作 - Google Patents

使用注入的太阳能电池制作 Download PDF

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CN102099923A
CN102099923A CN2009801279457A CN200980127945A CN102099923A CN 102099923 A CN102099923 A CN 102099923A CN 2009801279457 A CN2009801279457 A CN 2009801279457A CN 200980127945 A CN200980127945 A CN 200980127945A CN 102099923 A CN102099923 A CN 102099923A
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B·阿迪比
E·S·默尔
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Solar Implant Technologies Inc
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Abstract

一种太阳能电池器件包括硅衬底，该硅衬底包括预先存在的掺杂物。均匀轻掺杂区域形成于硅衬底的表面上以在预先存在的掺杂物与轻掺杂区域之间形成结。重掺杂区域选择性地注入于硅衬底的表面上。籽晶层形成于重掺杂区域之上。金属接触形成于籽晶层之上。该器件可以包括防反射涂层。在一个实施例中，重掺杂区域形成抛物线形状。重掺杂区域可以按一定距离在硅衬底上各自是范围为50至200微米的宽度。重掺杂区域也可以在硅衬底上相互横向隔开范围为1至3mm的距离。籽晶层可以是硅化物。

Description

使用注入的太阳能电池制作
相关申请的交叉引用
本申请要求对如下申请的优先权：于2008年6月11日提交、标题为“SOLAR CELL FABRICATION USING IMPLANTATION”的第61/131,687号共同未决美国临时申请；于2008年6月11日提交、标题为“APPLICATIONS SPECIFIC IMPLANT SYSTEM FOR USE IN SOLAR CELL FABRICATIONS”的第61/131,688号共同未决美国临时申请；于2008年6月11日提交、标题为“FORMATION OF SOLAR CELL-SELECTIVE EMITTER USING IMPLANTATION AND ANNEAL METHODS”的第61/131,698号共同未决美国临时申请；于2008年6月24日提交、标题为“SOLAR CELL FABRICATION WITH FACETING AND IMPLANTATION”的第61/133,028号共同未决美国临时申请；以及于2009年3月20日提交、标题为“ADVANCED HIGH EFFICIENCY CRYSTALLINE SOLAR CELL FABRICATION METHOD”的第61/210,545号共同未决美国临时申请，这些申请都如同这里阐述一样通过参考结合于此。
技术领域
本发明涉及太阳能电池领域。更具体而言，本发明涉及一种太阳能电池器件和其制造方法。
背景技术
当在半导体衬底的表面上形成掺杂物时使用扩散受若干问题困扰。一个问题在于随着向半导体材料块中驱动未激活的掺杂物而在表面附近过量积累掺杂物。这一过量积累会在半导体衬底的不同区域中改变电阻率、因此造成太阳能电池的变化的吸光能力以及变化的电子-空穴形成和复合性能。具体而言，遇到的一个问题在于由于形成“死层”而缺乏对蓝光的利用。
常规扩散形成系统的另一弊端在于随着线宽和晶片厚度变小而难以跨半导体衬底对掺杂物横向地定位。随着发射极尺度从200微米缩减至少于50微米而预计太阳能电池产业需要掺杂物横向放置。这样的小型化对于当前在形成太阳能电池时的扩散和丝网印刷方法而言有困难或者甚至是不可能的。相对于在网格线之间的区域选择性地更改金属网格线下面区域的电阻率，提供了收集和生成电荷的优点并且因此获得效率增益。
扩散工艺通常使用向半导体衬底的表面上作为膏涂敷或者喷涂的掺杂物材料。然后加热半导体衬底以将掺杂物驱动至特定深度以形成结。通常在扩散熔炉或者类似加热装置中加热半导体衬底。n型或者p型掺杂物可以用来根据背景掺杂类型形成结。后续丝网印刷步骤用来在完成太阳能电池时向晶片的表面上形成接触线。
金属接触与半导体的界面影响太阳能电池的性能。常规地，加热在金属接触与硅之间的结以形成硅化物。这一加热工艺改进了界面但也包括弊端。
因而希望提供一种形成太阳能电池的改进的更经济的方法以克服常规太阳能电池制造方法的弊端、允许生产尺度更小而对剂量和掺杂物位置的控制更严密的太阳能电池。
发明内容
根据本发明的第一方面，提供一种太阳能电池器件。该器件包括硅衬底，该硅衬底包括预先存在的掺杂物。均匀轻掺杂区域在预先存在的掺杂物之上形成于硅衬底的表面上。结形成于预先存在的掺杂物与轻掺杂区域之间。结形成于与硅衬底的表面有预定距离处。重掺杂区域选择性地注入于轻掺杂区域内硅衬底的表面上。籽晶层形成于重掺杂区域之上。金属接触形成于籽晶层之上。该器件可以包括防反射涂层。
在一个示例实施例中，该器件包括电阻率范围为80至160欧姆/平方的均匀轻掺杂区域和电阻率范围为10至40欧姆/平方的重掺杂区域。在一个实施例中，均匀轻掺杂区域包括约100欧姆/平方的电阻率，并且重掺杂区域包括约25欧姆/平方的电阻率。重掺杂区域可以按一定距离在硅衬底上各自是范围为50至200微米的宽度。
籽晶层可以是硅化物。籽晶层也可以是材料层，该材料包括材料Ni、Ta、Ti、W或者Cu中的任一种。硅衬底可以包括用于在离子注入工艺期间对准重掺杂区域的放置的基准标记。
根据本发明的第二方面，提供一种形成太阳能电池器件的方法。该方法包括提供硅衬底，该硅衬底包括预先存在的掺杂物。使用离子注入工艺来在预先存在的掺杂物之上的硅衬底的表面上形成均匀轻掺杂区域。在预先存在的掺杂物与轻掺杂区域之间形成结。结形成于与硅衬底的表面有预定距离处。使用选择离子注入工艺来形成轻掺杂区域内硅衬底的表面上注入的重掺杂区域。重掺杂区域在硅衬底表面上的预定位置注入。使用选择离子注入工艺来在重掺杂区域之上形成籽晶层。在籽晶层之上形成金属接触。该方法可以包括形成防反射涂层。
使用物理掩模在硅衬底表面上的预定位置处注入重掺杂区域。物理掩模包括与预定位置对准的开口。物理掩模形成于硅衬底的表面上。物理掩模在选择离子注入工艺期间定位于硅衬底的表面上方的预定距离处，以形成重掺杂区域。在一个替代实施例中，选择离子注入工艺使用与预定位置对准的成形离子束以形成重掺杂区域。在又一实施例中，可以通过在衬底的表面上的掩模完成这样的选择注入。可以使用形成重掺杂区域的所有上述实施例的组合。
在一个示例实施例中，均匀轻掺杂区域包括范围为80至160欧姆/平方的电阻率，并且均匀轻掺杂区域包括约100欧姆/平方的电阻率。重掺杂区域可以包括范围为10至40欧姆/平方的电阻率。在一个实施例中，重掺杂区域包括约25欧姆/平方的电阻率。重掺杂区域各自按一定距离在硅衬底上包括范围为50至200微米的宽度，并且重掺杂区域按一定距离在硅衬底上相互横向隔开范围为1至3mm的距离。
籽晶层优选为硅化物。籽晶层可以是材料层，该材料包括材料Ni、Ta、Ti、W或者Cu中的任一种。硅衬底可以包括配置用于在选择离子注入工艺期间对准重掺杂区域的放置的基准标记。该方法包括在具有均匀轻掺杂区域的硅衬底上使用退火工艺。取而代之，在形成金属接触之后在硅衬底上使用退火工艺。在形成金属接触之后使用退火允许比常规工艺更低的退火温度。因此允许使用载体上的衬底或者薄衬底，否则这些衬底可能在更高温度退化。
考虑结合附图进行的下文描述将清楚本发明的其它特征。
附图说明
在所附权利要求书中阐述了本发明的新颖特征。然而出于说明目的，在以下图中阐述本发明的若干实施例：
图1图示了根据本发明一个实施例的制造太阳能电池的选择性发射极结构的方法。
图2图示了根据本发明一个替代实施例的制造太阳能电池的选择性发射极结构的方法。
图3图示了根据本发明又一实施例的制造太阳能电池的选择性发射极结构的方法。
图4图示了根据本发明一个实施例的形成太阳能电池的籽晶层的方法。
图5图示了根据本发明一个实施例的形成太阳能电池的接触层的方法。
图6图示了根据本发明一个实施例的太阳能电池器件的侧视图。
图7图示了根据本发明一个替代实施例的太阳能电池器件的侧视图。
图7A图示了根据本发明又一实施例的太阳能电池器件的侧视图。
图8图示了根据本发明一个实施例的形成太阳能电池器件的工艺流程图。
具体实施方式
在下文描述中出于说明目的阐述诸多细节和替代方式。然而本领域普通技术人员将认识到，不使用这些具体细节仍可实现本发明。在其它实例中以框图形式示出了公知结构和器件以免本发明的描述因不必要的细节而难以理解。
本发明使用注入以形成均匀和选择性发射极区域。本发明致力于用于形成太阳能电池并且具体通过一系列注入工艺形成选择性发射极的方法。目前，这样横向地操纵和放置掺杂物的能力用常规扩散或者网印工艺是有难度的。本发明选择性地控制网格线、接触的电阻并且选择性地控制金属/半导体界面的接触电阻。另外，用离子注入对选择性发射极的有利形成允许提高太阳能电池器件的性能。本发明可以应用于生长的单晶硅、多晶硅以及放置于载体(比如玻璃)上的很薄的硅或者很薄的膜沉积硅或者用于太阳能电池形成的其它材料。本发明可以延及用于在结制作中使用的任何其它材料的原子核素放置。
图1图示了根据本发明一个实施例的使用注入工艺来制造选择性发射极结构105的方法(步骤101D)。在步骤101A，提供用掺杂物102预掺杂的硅衬底101。硅衬底101包括单晶硅材料或者多晶硅材料的晶片。在一个示例实施例中，硅衬底包括156x156mm晶片。本领域普通技术人员所知的其它适当衬底也可以用于硅衬底101。在一个示例实施例中，硅衬底101包括预掺杂材料102。向预掺杂材料102预掺杂p型掺杂物(通常为或者取而代之以n型掺杂物)。预掺杂材料102可以具有范围为0.5-1.5欧姆/厘米的电阻率和少于5E 16/立方厘米的原子浓度。使用生产率高的注入系统(未示出)来形成均匀轻掺杂区域或者均匀层104。这样的注入系统是通过整体引用结合于此、于2009年6月11日提交、标题为“Application Specific Implant System for Use in Solar Cell Fabrications”的第XXXXXX号共同未决专利申请的主题。均匀层104为高电阻率区域。均匀层104允许由于光入射而形成电子-空穴对。在操作中，均匀层104优选地使用相对低水平的掺杂物(高电阻率)以有助于形成电荷载流子而又避免复合并且因此避免“死层”效应。
离子束“A”用于注入均匀层104。离子束A在预掺杂材料102中以均厚方式注入均匀层104。在注入均匀层104时，使用斑束或者宽等离子体束来跨硅衬底101提供全覆盖。可以跨晶片扫描束、可以在束之下移动晶片或者其组合以实现全覆盖。注入系统的生产率可以包括每小时约1000个或者更多晶片。
形成如下p-n结103，预掺杂材料102和均匀层104汇合于该结。可以在与硅衬底101的表面107有预定距离处形成结103。根据离子束A中使用的能量数量E1确定结103与表面107的距离。能量数量E1根据用于太阳能电池器件的所需规格可以范围为1至150KeV。均匀层104可以具有范围为80至160欧姆/平方的电阻率。在一个示例实施例中，均匀层104的电阻率包括约100欧姆/平方。这里可以进行退火步骤并且下文在步骤101C具体描述退火步骤。取而代之，可以取消这里的退火步骤直至下文的最终退火步骤(图6)。
在步骤101B，在硅衬底101的表面107上形成接触掩模106。接触掩模106允许掺杂物在硅衬底101中在预定位置的选择性放置。接触掩模106可以是本领域普通技术人员公知的任何适当掩模。这样的掩模的例子可以包括光致抗蚀剂、氮化物层、氧化物层、丝网印刷或者任何其它适当膜。可以使用本领域普通技术人员公知的工艺来形成接触掩模106。在一个实施例中，可以使用光刻或者接触印刷工艺来形成接触掩模106。在接触掩模106中的开口109可以是与约200微米宽一样大的尺度。取而代之，开口109可以是与50微米宽一样小的尺度。可以通过开口109在硅衬底101内注入掺杂物来形成与开口109相同尺寸的选择性发射极108。在各选择性发射极108之间的距离或者节距111(步骤101C)可以在约1至3mm的范围中。
步骤101C图示了使用离子注入束‘B’来注入用于选择性发射极108的重掺杂区域。离子束B在接触掩模106未保护的均匀层104中注入选择性发射极108。可以在整个硅衬底101之上以均厚方式施加离子束B，其中接触掩模106将防止离子进入衬底。取而代之，可以使用适当定向的成形束以瞄准方式施加离子束B。使用成形束可以帮助减少掺杂物使用并且增加注入工艺生产率。离子束B包括根据制造商规格选择的掺杂物。在一个示例实施例中，用于选择性发射极108的掺杂物包括n型掺杂物，比如磷或者砷。取而代之，在将n型预掺杂材料102用于硅衬底101的一个实施例中，离子束B可以包括p型掺杂物，比如硼。向预掺杂材料102中与表面107有一定深度和距离地注入选择性发射极108。根据离子束B中使用的能量数量E2来确定选择性发射极108与表面107的距离。该距离也依赖于为离子束B选择的掺杂物浓度水平。能量数量E2可以依赖于用于太阳能电池器件的所需规格。在一个替代实施例中，步骤101C包括使用离子束B的可变能量水平和可变掺杂物浓度水平的多次注入。在一个实施例中，能量E2可以是用于提供定制原子分布的可变性连续群。在通过整体引用结合于此、于2009年6月11日提交、标题为“Formation of Solar Cell Selective Emitter Using Implant and Anneal Method”的第XXXXXX号共同未决专利申请中具体描述这样的分布定制。
退火步骤将硅衬底101加热至接近但是适当地低于熔化的温度并且恢复离子注入引起的对硅衬底101的晶体结构的任何损坏。这样的退火也将引起掺杂物原子的激活。这样的退火和激活的温度和时间可以与400至500摄氏度一样低，这是足以消除任何双空位(硅衬底101的晶格结构的丢失原子)并且提供掺杂物原子的足够激活的温度。退火步骤可以包括熔炉退火。取而代之，可以使用激光退火或者闪光灯退火取代熔炉退火。退火步骤并未不利地影响下文描述的后续工艺步骤。在一个替代实施例中，可以取消这一退火步骤直至下文的最终退火步骤(图6)。
可以与步骤101C的注入选择性发射极108一起包括表面纹理化工艺。表面纹理化提供良好的捕光和对表面轮廓的附着并且因此将改进下文描述的接触形成。选择性发射极108可以具有范围为10至40欧姆/平方的电阻率。在一个示例实施例中，选择性发射极108的电阻率包括约25欧姆/平方。
步骤101D图示了完成的选择性发射极结构105。
图2图示了根据本发明一个替代实施例的使用注入工艺来制造选择性发射极结构205的方法(步骤201C)。类似于上文在图1中描述的步骤，在步骤201A提供用掺杂物202预掺杂的硅衬底201。硅衬底201包括单晶硅材料或者多晶硅材料的晶片。在一个示例实施例中，硅衬底包括156x156mm晶片。本领域普通技术人员已知的其它适当衬底也可以用于硅衬底201。在一个示例实施例中，硅衬底201包括预掺杂材料202。向预掺杂材料202预掺杂p型掺杂物。预掺杂材料202可以具有范围为0.5-1.5欧姆/厘米的电阻率和少于5E16/立方厘米的原子浓度。如上文描述的注入系统包括用于形成均匀轻掺杂区域或者均匀层204的高生产率。均匀层204为高电阻率区域。均匀层204的目的在于由于光入射而形成电子-空穴对。在操作中，均匀层204需要相对低水平的掺杂物(高电阻率)以有助于形成电荷载流子。离子束A用于注入均匀层204。离子束A在预掺杂材料202中以均厚方式注入均匀层204。在注入均匀层204时，使用斑束或者宽等离子体束来跨硅衬底201提供全覆盖。注入系统的生产率包括每小时约1000个或者更多晶片。
形成如下p-n结203，预掺杂材料202和均匀层204相交于该结。可以在与硅衬底201的表面207有预定距离处形成结203。根据离子束A中使用的能量数量E1确定结203与表面207的距离。能量数量E1根据用于太阳能电池器件的所需规格可以在1至150KeV的范围中。均匀层204可以具有范围为80至160欧姆/平方的电阻率。在一个示例实施例中，均匀层204的电阻率包括约100欧姆/平方。这里可以进行退火步骤，并且下文在步骤201B具体描述退火步骤。取而代之，可以取消这里的退火步骤直至下文的最终退火步骤(图6)。
在步骤201B，使用硬掩模206来辅助选择性发射极208的注入。可以在注入系统(未示出)的注入器(未示出)中包括硬掩模。硬掩模206允许掺杂物在硅衬底201上在预定位置的选择性放置。硬掩模206可以是用来制作这样的掩模的任何适当材料。硬掩模206的适当材料并未影响通过溅射的太阳能电池器件的注入工艺。硬掩模206的适当材料能够容许在离子束加热期间经历的提升温度。在一个实施例中，硬掩模206可以包括硅或者SiC。然而本领域普通技术人员将理解许多适当其它材料。硬掩模206的适当厚度允许在硬掩模206的加热和冷却期间控制和管理硬掩模206的温度。硬掩模206的放置和支撑依赖于为硬掩模206选择的材料和厚度。硬掩模206可以在开始离子注入之前放置于晶片上。硬掩模206可以直接放置于硅衬底表面207上。取而代之，可以使用支撑件或者间隔物(未示出)来在硬掩模与硅衬底表面207之间提供间隙。在另一实施例中，硬掩模206可以是与表面207分开放置的阵列。
在硬掩模206中的开口209可以是用于产生与约200微米宽一样大的选择性发射极208的距离。取而代之，开口209可以被调节或者可以是用于产生与50微米宽一样小的选择性发射极208的距离。在各选择性发射极208之间的距离或者节距211可以在约1至3mm的范围中。可以使用注入系统向硅衬底201上刻画配准标记或者基准标记。配准标记可以用于对准硬掩模206与硅衬底201。配准标记可以在选择性发射极208的注入工艺的后续步骤期间用于对准。在一个替代实施例中，光学限定晶片的虚拟中心并且相应地对准硬掩模206和晶片以在许多晶片上提供一致和可重复的图案。
仍然参照步骤201B，示出了用于注入重掺杂区域或者选择性发射极208的离子注入束‘C’。离子束C在硬掩模206未遮蔽的均匀层204中注入选择性发射极208。可以在包括硬掩模206的整个硅衬底201之上以均厚方式施加离子束C。取而代之，可以使用成形束以瞄准方式施加离子束C。使用成形束可以帮助减少掺杂物使用并且增加注入工艺生产率。在一个示例实施例中，离子束C可以包括宽成形离子束。在另一实施例中，离子束C可以包括可动斑离子束。可以使用宽成形离子束和可动斑束以有助于形成接近50微米宽度的选择性发射极208。
离子束C包括根据制造商规格选择的掺杂物。在一个示例实施例中，用于选择性发射极208的掺杂物包括n型掺杂物，比如磷或者砷。取而代之，在将n型预掺杂材料202用于硅衬底201的一个实施例中，离子束C可以包括p型掺杂物。向预掺杂材料202中与表面207有一定深度和距离地注入选择性发射极208。根据离子束C中使用的能量数量E2确定选择性发射极208与表面207的距离。该距离也依赖于为离子束C选择的掺杂物浓度水平。能量数量E2可以依赖于用于太阳能电池器件的所需规格。在一个替代实施例中，步骤201B包括使用离子束C的可变能量水平和可变掺杂物浓度水平的多次注入。在一个实施例中，能量E2可以是用于提供定制原子分布的可变性连续群。在通过整体引用结合于此、于2009年6月11日提交、标题为“Formation of Solar Cell Selective Emitter Using Implant and Anneal Method”的第XXXXXX号共同未决专利申请中具体描述这样的分布定制。
退火步骤将硅衬底201加热至接近但是适当地低于熔化的温度并且恢复离子注入引起的对硅衬底201的晶体结构的任何损坏。这样的退火也将引起掺杂物原子的激活。这样的退火和激活的温度和时间可以与400至500摄氏度一样低，这是足以消除任何双空位(硅衬底201的晶格结构的丢失原子)并且提供掺杂物原子的足够激活的温度。退火步骤可以包括熔炉退火。取而代之，可以使用激光退火或者闪光灯退火取代熔炉退火。退火步骤并未不利地影响下文描述的后续工艺步骤。在一个替代实施例中，取消这里的退火步骤直至下文的最终退火步骤(图6)。
可以与步骤201B的注入选择性发射极208一起包括表面纹理化工艺。表面纹理化提供良好捕光和对表面轮廓的附着并且因此将改进下文描述的接触形成。选择性发射极208可以具有范围为10至40欧姆/平方的电阻率。在一个示例实施例中，选择性发射极208的电阻率包括约25欧姆/平方。
步骤201C图示了完成的选择性发射极结构205。
图3图示了根据本发明又一实施例的使用注入工艺来制造选择性发射极结构(步骤301C)305的方法。选择性发射极结构305类似于上文在图2中描述的选择性发射极结构205。在步骤301A，提供用掺杂物302预掺杂的硅衬底301。硅衬底301包括单晶硅材料或者多晶硅材料的晶片。在一个示例实施例中，硅衬底包括156x156mm晶片。本领域普通技术人员公知的其它适当衬底也可以用于硅衬底301。在一个示例实施例中，硅衬底301包括预掺杂材料302。向预掺杂材料302预掺杂p型掺杂物。预掺杂材料302可以具有范围为0.5至1.5欧姆/厘米的电阻率和少于5E16/立方厘米的原子浓度。如上文描述的注入系统包括用于形成均匀轻掺杂区域或者均匀层304的高生产率。均匀层304为高电阻率区域。均匀层304的目的在于由于光入射而形成电子-空穴对。在操作中，均匀层304需要相对低水平的掺杂物(高电阻率)以有助于形成电荷载流子。离子束A用于注入均匀层304。离子束A在预掺杂材料302中以均厚方式注入均匀层304。在注入均匀层304时，使用斑束或者宽等离子体束来跨硅衬底301提供全覆盖。注入系统的生产率包括每小时约1000个或者更多晶片。
形成如下p-n结303，预掺杂材料302和均匀层304汇合于该结。可以与硅衬底301的表面307有预定距离地形成结303。根据离子束A中使用的能量数量E1确定结303与表面307的距离。能量数量E 1根据用于太阳能电池器件的所需规格可以在1KeV至150KeV的范围中。均匀层304可以具有范围为80至160欧姆/平方的电阻率。在一个示例实施例中，均匀层304的电阻率包括约100欧姆/平方。这里可以进行退火步骤。取而代之，可以取消这里的退火步骤直至下文的最终退火步骤(图6)。
在步骤301B，使用离子注入束‘D’以有助于注入选择性发射极308。可以使用注入系统向硅衬底301中刻画配准标记或者基准标记。配准标记可以在下文在步骤301B中示出的选择性发射极308的注入工艺期间用于对准。
仍然参照步骤301B，示出了用于注入重掺杂区域或者选择性发射极308的离子注入束D。可以通过使用磁手段、静电手段或者这些手段的组合对离子束D进行成形以瞄准方式施加离子束D。可以将离子束D成形为与选择性发射极308的宽度309一致的指定尺寸。可以在与硅衬底301的长度和宽度一致的一个或者两个方向上使离子束D变窄。可以在一个方向上使离子束D变窄而跨硅衬底301的长度扫描离子束D。取而代之，可以沿着硅衬底301的宽度伸长或者快速扫描离子束D。在另一实施例中，可以在选择性发射极308的注入期间在高帽成形束(top hat shaped beam)中形成离子束D。使用成形束可以帮助减少掺杂物使用并且增加注入工艺生产率。在一个示例实施例中，离子束D可以包括宽成形离子束。在一个示例实施例中，离子束D可以包括成形束或者扫描束以无需任何遮蔽地通过束的操纵、晶片位置的操纵或者通过束脉冲调制来生成高和低掺杂物区域。使用成形或者扫描束而无需任何遮蔽提供离子束D的附加和重叠扩展。
离子束D在硅衬底301的表面307上的预定位置在均匀层304中注入选择性发射极308。可以对离子束D进行成形以提供与约200微米宽一样大的选择性发射极308。取而代之，可以对离子束D进行成形以提供与50微米宽一样小的选择性发射极308。在各选择性发射极308之间的距离或者节距311可以在约1至3mm的范围内。
离子束D包括根据制造商规格选择的掺杂物。在一个示例实施例中，用于选择性发射极308的掺杂物包括n型掺杂物，比如磷或者砷。取而代之，在将n型预掺杂材料302用于硅衬底301的一个实施例中，离子束D可以包括p型掺杂物，比如硼。向预掺杂材料302中与表面307有一定深度和距离地注入选择性发射极308。根据离子束D中使用的能量数量E2确定选择性发射极308与表面307的距离。该距离也依赖于为离子束D选择的掺杂物浓度水平。能量数量E2可以依赖于用于太阳能电池器件的所需规格。在一个替代实施例中，步骤301B包括使用离子束D的可变能量水平和可变掺杂物浓度水平的多次注入。在一个实施例中，能量E2可以是用于提供定制原子分布的可变性连续群。在通过整体引用结合于此、于2009年6月11日提交、标题为“Formation of Solar Cell Selective Emitter Using Implant and Anneal Method”的第XXXXXX号共同未决专利申请中具体描述这样的分布定制。
退火步骤将硅衬底301加热至接近但是适当地低于熔化的温度并且恢复离子注入引起的对硅衬底301的晶体结构的任何损坏。这样的退火也将引起掺杂物原子的激活。这样的退火和激活的温度和时间可以与400至500摄氏度一样低，这是足以消除任何双空位(硅衬底301的晶格结构的丢失原子)并且提供掺杂物原子的足够激活的温度。退火步骤可以包括熔炉退火。取而代之，可以使用激光退火或者闪光灯退火取代熔炉退火。退火步骤并未不利地影响下文描述的后续工艺步骤。在一个替代实施例中，可以取消这里的退火步骤直至下文的最终退火步骤(图6)。
可以与步骤301B的注入选择性发射极308一起包括表面纹理化工艺。表面纹理化提供良好捕光和对表面轮廓的附着并且因此将改进下文描述的接触形成。选择性发射极308可以具有范围为10至40欧姆/平方的电阻率。在一个示例实施例中，选择性发射极308的电阻率包括约25欧姆/平方。
步骤301C图示了完成的选择性发射极结构305。步骤301D图示了完成的选择性发射极结构305A的一个替代实施例。选择性发射极结构305A类似于完成的选择性发射极结构305，不同在于选择性发射极结构305A包括选择性发射极308A。
图4图示了根据本发明一个实施例的过渡层或者籽晶层312的形成。与上文在图1中所述类似地在选择性发射极结构305上形成接触掩模310。接触掩模310形成于选择性发射极结构305的表面上。接触掩模310可以是本领域普通技术人员公知的任何适当掩模。这样的掩模的例子可以包括防反射覆盖物、氮化物层、氧化物层、丝网印刷或者任何其它适当膜。可以使用本领域普通技术人员公知的工艺来形成接触掩模310。在一个实施例中，可以使用光刻或者接触印刷工艺来形成接触掩模310。也可以运用与硬掩模206(图2)类似的物理掩模。
离子束‘E’用来在选择性发射极308之上注入籽晶层312。离子束E可以包括相对高剂量的金属。离子束E的布置可以类似于上文描述的布置。离子束E可以包括与上文所述类似的成形离子束。籽晶层312可以包括硅化物层。籽晶层312可以包括各种金属注入，比如Ni、Ta、Ti、W或者Cu。在一个示例实施例中，籽晶层312可以包括各自为不同材料的一层或者更多层。籽晶层312更改在接触314(图5)与选择性发射极308之间的金属/半导体界面的功函数。在一个示例实施例中，籽晶层312的功函数在选择性发射极308的功函数与接触314的功函数之间(图5)。这样的功函数或者带隙设计可以改进接触的金属/半导体界面并且改进太阳能电池600(图6)的总体性能。在一个示例实施例中，注入籽晶层312以包括比选择性发射极308的宽度略小的宽度。籽晶层312的略小宽度允许减少接触泄漏并且允许形成肖特基二极管。金属到半导体的接触非常重要，因为它们存在于每个光电器件中。它们根据金属/半导体界面的特性可以表现为肖特基势垒或者欧姆接触。金属/半导体界面的控制和管理在提高太阳能电池600(图6)的性能中颇为有益。
图5图示了根据本发明一个实施例的接触层或者接触314的形成。使用适当金属材料来形成接触314。可以使用任何公知金属沉积技术、丝网印刷技术或者镀覆技术来形成接触314。
退火步骤将硅衬底301加热至接近但是适当地低于熔化的温度并且恢复离子注入和接触形成引起的对硅衬底301的晶体结构的任何损坏。这样的退火也将引起掺杂物原子的激活。这样的退火和激活的温度和时间可以与400至500摄氏度一样低，这是足以消除任何双空位(硅衬底301的晶格结构的丢失原子)并且提供掺杂物原子的足够激活的温度。退火步骤可以包括熔炉退火。取而代之，可以使用激光退火或者闪光灯退火取代熔炉退火。退火步骤并未不利地影响下文描述的后续工艺步骤。在一个替代实施例中，可以取消这里的退火步骤直至下文的最终退火步骤(图6)。
图6图示了根据本发明一个实施例的太阳能电池600。比如通过化学剥离或者可以通过灰化来去除接触掩模310(图5)。在一个示例实施例中，NaOH(＜3wt％)或者KOH(＜3wt％)溶液用于在55摄氏度按数秒停留时间以2.4帕压强的溅射剥离接触掩模310。本领域普通技术人员将理解用于剥离接触掩模310的其它适当溶液。防反射涂层(ARC)或者ARC膜318可以形成于硅衬底301的暴露表面307之上。ARC膜318也可以用于钝化均匀层304。ARC膜318也充当防反射膜以增加入射光在太阳能电池600内的俘获。因此，ARC膜318可以提高太阳能电池600的效率。使用双层有机膜的简单辊系统(比如Dupont MM500或者Shell SU8)和其它替代系统可以层积于表面307上。ARC膜318的粘性和连续性在这一层积阶段是关键的。在约50-100摄氏度的低温进行层积阶段。在一个示例实施例中，预热并且按1至2毫米/分钟的速度操作辊系统的辊以保证硅衬底310优选地未达到约50摄氏度以上的温度。
在一个替代实施例中，可以使用与上述类似的离子注入束来形成ARC膜318。ARC膜318可以在均匀层304上方形成于硅衬底310的表面307上。在一个替代实施例中，可以在形成图3的步骤301A的均匀层304之前形成ARC膜318。均匀层304的轻度掺杂并未不利地影响ARC膜318的质量。可以进行与上文描述的这样的退火类似的最终退火步骤。在一个示例实施例中，仅进行最终退火步骤而不是如上文所述使用在各注入之后的多个退火步骤。
太阳能电池600包括网格线或者接触314之间中的高效光转换效率。太阳能电池600也提供接触314之下的高度传导选择性发射极308并且因此提供比无这里描述的选择性发射极308的太阳能电池高1至2个绝对百分点量级的效率增益。
图7图示了根据本发明一个替代实施例的太阳能电池700。太阳能电池700包括预掺杂材料702和均匀层704。太阳能电池700包括与上文描述的选择性发射极结构305A(图3)类似的选择性发射极结构705。选择性发射极结构705包括选择性发射极708。使用适当金属材料使用离子注入来形成接触714。可以使用离子束外延或者如上文描述的任何公知金属沉积技术来形成接触714。在一个替代实施例中，太阳能电池700可以包括形成于均匀层704的暴露表面707之上的防反射涂层(ARC)或者ARC膜(未示出)。因此，电荷载流子有利地耦合到太阳能电池700的接触714。
图7A图示了根据本发明又一实施例的太阳能电池700A。选择性发射极708A可以如图7A中所示比接触714明显更宽。选择性发射极708A有利地减少从接触714向太阳能电池700A的其它区域漏电的可能性。可以通过调节上述离子束D(图3)的尺度来增加选择性发射极708A的宽度。另外，可以通过调节上文分别在图1和图2中描述的接触掩模106或者硬掩模201的尺度来增加选择性发射极708A的宽度。
考察图8、参照图1至图7A，示出了根据本发明一个实施例的用于形成太阳能电池器件600的方法的工艺流程图800。在步骤810，方法开始。提供用掺杂物102预掺杂的硅衬底101。在一个示例实施例中，掺杂物102包括p型掺杂物。在步骤820，使用注入系统形成均匀层104。均匀层104包括高电阻率区域。使用离子束A注入均匀层104。离子束A在预掺杂材料102中以均厚方式注入均匀层104。在注入均匀层104时，使用斑束或者宽等离子体束来跨硅衬底101提供全覆盖。注入系统的生产率包括每小时约1000个或者更多晶片。均匀层104可以具有范围为80至160欧姆/平方的电阻率。在一个示例实施例中，均匀层104的电阻率包括约100欧姆/平方。可以进行退火步骤。取而代之，可以取消退火步骤。
在步骤830，在轻度掺杂均匀层104内注入重度掺杂或者选择性发射极108(图1)。在硅衬底101上的预定位置注入选择性发射极108。在一个示例实施例中，使用接触掩模106以有助于以均厚方式使用离子注入束A来注入选择性发射极108。在又一实施例中，以瞄准方式使用成形离子注入束D来注入选择性发射极308(图3)。配准标记可以在选择性发射极308的注入工艺期间用于对准成形离子注入束D。注入的选择性发射极308可以约200微米宽。取而代之，可以形成约50微米宽的选择性发射极308。在各选择性发射极308之间的距离或者节距311可以在约1至3mm的范围内。选择性发射极308可以具有范围为10至40欧姆/平方的电阻率。在一个示例实施例中，选择性发射极308的电阻率包括约25欧姆/平方。可以进行退火步骤。取而代之，可以取消退火步骤。
在步骤840，根据本发明的一个实施例形成籽晶层312(图4)。接触掩模310形成于选择性发射极结构305的表面上。在一个实施例中，可以使用光刻或者接触印刷工艺来形成接触掩模310。离子束E用来在选择性发射极308之上注入籽晶层312。离子束E可以包括相对高剂量的金属。离子束E可以包括与上文所述类似的成形离子束。籽晶层312可以包括硅化物层。籽晶层312可以包括各种金属注入，比如Ni、Ta、Ti、W或者Cu。在一个示例实施例中，注入籽晶层312以包括比选择性发射极308的宽度略小的宽度。籽晶层312的略小宽度允许减少接触泄漏并且允许形成肖特基二极管。
在步骤850，根据本发明的一个实施例形成接触314(图5)。使用适当金属材料使用离子注入来形成接触314。可以使用与上述类似的离子束注入来形成接触314。可以在形成接触314时使用与等离子体掺杂类似的掺杂物浓度或者掺杂物比率。取而代之，可以在形成接触314时使用束线注入系统。在又一实施例中，可以使用高剂量比率系统(比如分子束外延、分子束注入或者等离子体离子注入系统)来形成接触314。在注入接触314之后，可以使用接触314的类似或者匹配功函数的高得多的注入浓度的附加注入步骤来进一步形成接触314。取而代之，可以在接触314上使用后续沉积步骤。在又一实施例中，可以在进一步形成接触314时使用后续喷墨溅射步骤。
退火步骤将硅衬底301加热至接近但是适当地低于熔化的温度并且恢复离子注入和接触形成引起的对硅衬底301的晶体结构的任何损坏。这样的退火也将引起掺杂物原子的激活。这样的退火和激活的温度和时间可以与400至500摄氏度一样低，这是足以消除任何双空位(硅衬底301的晶格结构的丢失原子)并且提供掺杂物原子的足够激活的温度。退火步骤可以包括熔炉退火。取而代之，可以使用激光退火或者闪光灯退火取代熔炉退火。退火步骤并未不利地影响下文描述的后续工艺步骤。在一个示例实施例中仅进行最终退火步骤而不是如上文所述使用在各注入之后的多个退火步骤。
提供根据方法800的完成的太阳能电池600(图6)。太阳能电池600包括形成于硅衬底301的暴露表面307之上的防反射涂层(ARC)或者ARC膜318。ARC膜318可以用于钝化均匀层304。ARC膜318也充当防反射膜以增加太阳能电池600内俘获的光入射。因此，ARC膜318可以提高太阳能电池600的效率。太阳能电池600包括网格线或者接触314之间中的高效光转换效率。太阳能电池600也提供接触下面的高度传导的选择性发射极308并且因此提供比无这里描述的选择性发射极308的太阳能电池高1至2个绝对百分点量级的效率增益。在步骤860，方法800结束。
尽管已经参照诸多具体细节描述本发明，但是本领域普通技术人员将认识到，可以用其它具体形式实施本发明而不脱离本发明的精神实质。因此，本领域普通技术人员将理解，本发明将不受前述示例细节限制而实际上将由所附权利要求限定。

Claims (45)

1.一种太阳能电池器件，包括：
硅衬底，其中包括有预先存在的掺杂物；
均匀轻掺杂区域，其在所述预先存在的掺杂物之上形成于所述硅衬底的表面上，由此在所述预先存在的掺杂物与所述轻掺杂区域之间形成结；
重掺杂选择性注入区域，其在所述轻掺杂区域内所述硅衬底的所述表面上；
籽晶层，其形成于所述重掺杂区域之上；以及
金属接触，其形成于所述籽晶层之上。
2.根据权利要求1所述的器件，其中所述均匀轻掺杂区域被均匀地注入。
3.根据权利要求1所述的器件，还包括所述轻掺杂区域顶上的防反射涂层。
4.根据权利要求1所述的器件，其中所述均匀轻掺杂区域包括范围为80至160欧姆/平方的电阻率。
5.根据权利要求4所述的器件，其中所述均匀轻掺杂区域包括约100欧姆/平方的电阻率。
6.根据权利要求1所述的器件，其中所述重掺杂区域包括范围为10至40欧姆/平方的电阻率。
7.根据权利要求6所述的器件，其中所述重掺杂区域包括约25欧姆/平方的电阻率。
8.根据权利要求1所述的器件，其中所述结形成于与所述硅衬底的所述表面有预定距离处。
9.根据权利要求1所述的器件，其中所述籽晶层包括硅化物。
10.根据权利要求1所述的器件，其中通过注入来自包括Ni、Ta、Ti、W或者Cu中的一种或者更多种的组的材料来形成所述籽晶层。
11.根据权利要求1所述的器件，其中所述重掺杂区域各自按一定距离在所述硅衬底上包括范围为50至200微米的宽度。
12.根据权利要求1所述的器件，其中所述重掺杂区域在所述硅衬底上相互横向隔开范围为1至3mm的距离。
13.根据权利要求1所述的器件，其中所述硅衬底包括配置用于在离子注入工艺期间对准所述重掺杂区域的放置的基准标记。
14.一种形成太阳能电池器件的方法，包括以下步骤：
提供硅衬底，所述硅衬底其中包括有预先存在的掺杂物；
使用离子注入工艺以在所述预先存在的掺杂物之上在所述硅衬底的表面上形成均匀轻掺杂区域，由此在所述预先存在的掺杂物与所述轻掺杂区域之间形成结；
使用选择离子注入工艺以形成在所述轻掺杂区域内所述硅衬底的所述表面上注入的重掺杂区域，所述重掺杂区域在预定位置注入于所述硅衬底的表面上；
使用所述选择离子注入工艺以在所述重掺杂区域之上形成籽晶层；以及
使用所述选择离子注入工艺以在所述籽晶层之上形成金属接触。
15.根据权利要求14所述的方法，还包括使用所述选择离子注入工艺以形成防反射涂层。
16.根据权利要求14所述的方法，其中使用物理掩模在所述硅衬底表面上的预定位置注入所述重掺杂区域，所述物理掩模具有与所述预定位置对准的开口。
17.根据权利要求16所述的方法，其中所述物理掩模形成于所述硅衬底的所述表面上。
18.根据权利要求16所述的方法，其中所述物理掩模在所述选择离子注入工艺期间定位于所述硅衬底的所述表面上方的预定距离处以形成所述重掺杂区域。
19.根据权利要求14所述的方法，其中所述选择离子注入工艺使用与所述预定位置对准的成形离子束以形成所述重掺杂区域。
20.根据权利要求14所述的方法，其中所述均匀轻掺杂区域包括范围为80至160欧姆/平方的电阻率。
21.根据权利要求20所述的方法，其中所述均匀轻掺杂区域包括约100欧姆/平方的电阻率。
22.根据权利要求14所述的方法，其中所述重掺杂区域包括范围为10至40欧姆/平方的电阻率。
23.根据权利要求22所述的方法，其中所述重掺杂区域包括约25欧姆/平方的电阻率。
24.根据权利要求14所述的方法，其中所述结形成于与所述硅衬底的所述表面有预定距离处。
25.根据权利要求14所述的方法，其中所述籽晶层包括硅化物。
26.根据权利要求14所述的方法，其中所述籽晶层包括材料层，其中所述材料为Ni、Ta、Ti、W或者Cu。
27.根据权利要求14所述的方法，其中所述重掺杂区域各自按一定距离在所述硅衬底上包括范围为50至200微米的宽度。
28.根据权利要求14所述的方法，其中所述重掺杂区域在所述硅衬底上相互横向隔开范围为1至3mm的距离。
29.根据权利要求14所述的方法，其中所述硅衬底包括配置用于在所述选择离子注入工艺期间对准所述重掺杂区域的放置的基准标记。
30.根据权利要求14所述的方法，还包括在具有所述均匀轻掺杂区域的所述硅衬底上使用退火工艺。
31.根据权利要求14所述的方法，还包括在形成所述金属接触之后在所述硅衬底上使用退火工艺。
32.一种太阳能电池器件，包括：
硅衬底，其中包括有预先存在的掺杂物；
均匀轻掺杂区域，其在所述预先存在的掺杂物之上形成于所述硅衬底的表面上，由此在所述预先存在的掺杂物与所述轻掺杂区域之间形成结；
重掺杂区域，其选择性地注入于所述轻掺杂区域内所述硅衬底的所述表面上，所述重掺杂区域随着与所述硅衬底的所述表面的距离而改变；以及
金属接触，其形成于所述重掺杂区域之上。
33.根据权利要求32所述的器件，还包括形成于所述重掺杂区域之上和所述金属接触之下的籽晶层。
34.根据权利要求32所述的器件，还包括防反射涂层。
35.根据权利要求32所述的器件，其中所述均匀轻掺杂区域包括范围为80至160欧姆/平方的电阻率。
36.根据权利要求35所述的器件，其中所述均匀轻掺杂区域包括约100欧姆/平方的电阻率。
37.根据权利要求32所述的器件，其中所述重掺杂区域包括范围为10至40欧姆/平方的电阻率。
38.根据权利要求37所述的器件，其中所述重掺杂区域包括约25欧姆/平方的电阻率。
39.根据权利要求32所述的器件，其中所述结形成于与所述硅衬底的所述表面有预定距离处。
40.根据权利要求32所述的器件，其中所述重掺杂区域的横向梯度包括抛物线形状。
41.根据权利要求33所述的器件，其中所述籽晶层包括硅化物。
42.根据权利要求33所述的器件，其中所述籽晶层包括材料层，其中所述材料为Ni、Ta、Ti、W或者Cu。
43.根据权利要求32所述的器件，其中所述重掺杂区域各自按一定距离在所述硅衬底上包括范围为50至200微米的宽度。
44.根据权利要求32所述的器件，其中所述重掺杂区域在所述硅衬底上相互横向隔开范围1至3mm的距离。
45.根据权利要求32所述的器件，其中所述硅衬底包括配置用于在离子注入工艺期间对准所述重掺杂区域的放置的基准标记。
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CN110098283A (zh) * 2019-04-25 2019-08-06 晶科能源科技（海宁）有限公司 一种匹配激光选择性掺杂的离子注入磷扩散方法
CN117316759A (zh) * 2023-11-28 2023-12-29 武汉鑫威源电子科技有限公司 提高p型氮化镓掺杂效率的方法以及装置
CN117316759B (zh) * 2023-11-28 2024-02-20 武汉鑫威源电子科技有限公司 提高p型氮化镓掺杂效率的方法以及装置

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US8871619B2 (en) 2014-10-28
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CN102150277A (zh) 2011-08-10
EP2308060A1 (en) 2011-04-13
WO2009152365A1 (en) 2009-12-17
KR20110042051A (ko) 2011-04-22
JP2011524638A (ja) 2011-09-01
US20090309039A1 (en) 2009-12-17
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US8697553B2 (en) 2014-04-15
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EP2319087A1 (en) 2011-05-11
CN102099923B (zh) 2016-04-27
US20090308439A1 (en) 2009-12-17
HK1158366A1 (zh) 2012-07-13
WO2009152375A1 (en) 2009-12-17
WO2009152368A1 (en) 2009-12-17
US20090308440A1 (en) 2009-12-17
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