CN102150277A - 使用小面化和离子注入的太阳能电池制造 - Google Patents

使用小面化和离子注入的太阳能电池制造 Download PDF

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CN102150277A
CN102150277A CN2009801282017A CN200980128201A CN102150277A CN 102150277 A CN102150277 A CN 102150277A CN 2009801282017 A CN2009801282017 A CN 2009801282017A CN 200980128201 A CN200980128201 A CN 200980128201A CN 102150277 A CN102150277 A CN 102150277A
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B·阿迪比
E·S·默尔
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Abstract

根据本发明的太阳能电池具有减少的欧姆损耗。这些电池包括受光区域，所述受光区域的掺杂密度相比相邻的选择性射极区域较少。受光区域包含多个四面锥体，所述锥体减少太阳能电池由于反射而损耗的光量。受光区域中的较小的掺杂密度产生较少的由于电子空穴复合而损耗的蓝光。选择性射极区域中的较高掺杂密度允许与耦合到多个射极区域的金属网格的更好的接触。优选地，选择性射极区域和受光区域二者均使用含有掺杂物的窄离子射束进行注入。

Description

使用小面化和离子注入的太阳能电池制造
相关申请
本发明要求对以下全部通过引用整体并入本文之中的共同待决美国临时专利申请的优先权，这些申请包括：序号为61/131,687，提交于2008年6月11日的标题为“Solar Cell Fabrication Using
Implantation”的申请；序号为61/131,688，提交于2008年6月11日的标题为“Application Specific Implant System for Use in Solar Cell
Fabrications”的申请；序号为61/131,698，提交于2008年6月11日的标题为“Formation of Solar Cell Selective Emitter Using Implant
and Anneal Method”的申请；序号为61/133,028，提交于2008年6月24日的标题为“Solar Cell Fabrication with Faceting and
Implantation”的申请；以及序号为61/210,545，提交于2009年3月20日的标题为“Advanced High Efficiency Crystalline Solar CellFabrications Method”的申请。
技术领域
本发明涉及半导体器件及其制造方法。更具体而言，本发明涉及具有减少的欧姆损耗的太阳能电池的制造方法。
背景技术
半导体太阳能电池为人所熟知用于将光转化成电流。太阳能电池的效率部分受限于欧姆损耗，这受到用于制造太阳能电池的掺杂物扩散和接触丝网印刷的影响。
图1示出了一种现有技术太阳能电池100。太阳能电池100将撞击其顶表面上的受光区域135的光转换为电流，该电流可被传输到负载150。太阳能电池100包括覆盖于p型衬底110上的n型射极层115，从而限定p-n结111。射极层115包含高掺杂的n-阱117，其形成网格线并且可被覆盖以防反射涂层(ARC)120。在n-阱117的顶部上形成有金属触指125，用以将n-阱耦合到总线130。总线130耦合到负载150，其继而耦合到衬底110背面上的金属接触140。
射极层115通过将衬底110暴露于n-型离子源而形成，所述n-型离子随后扩散到基底100的顶表面中。太阳能电池100的掺杂分布具有若干缺点。
第一，随着掺杂物被驱入衬底100的主体中，产生该分布造成在顶表面附近有过量的未激活掺杂物。这种效应导致不同程度的光吸收、电子空穴对的产生以及有害的电子空穴对复合。这被称为“死层”，在其中蓝光在靠近受光区域135的顶表面之处不被吸收。由于表面附近的高掺杂程度，产生于死层中的电子空穴对在它们可以产生任何电流之前就快速复合了。小面化用以减少在其可以产生电流之前从太阳能电池反射的光量。
第二，用以形成常规分布的扩散技术，对于具有均匀的高电阻率受光区域和用于网格线、接触指、总线、金属-硅界面以及背面金属化的低电阻区域的选择性掺杂区域的形成而言，并不是最佳的。
第三，金属在半导体上的直接覆盖可以在导电触指125与射极层115之间的界面上造成不同的逸出功。为了更好地匹配金属接触与掺杂的硅之间的选出功，一些现有技术将接触125熔化，以在界面上形成硅化物。尽管硅化物的形成可能对调整选出功有所帮助，但仍然存在不良的欧姆损耗和金属分流的潜在可能。
最后，随着线路宽度和晶片厚度的降低，掺杂物跨衬底中的横向定位渐渐变得困难。太阳能电池网格线中的几何结构被预期会从大约200微米下降到50微米，并且将来甚至会下降至更小。当前的丝网印刷技术难以制造具有如此小的位移的器件。并且，随着晶片进一步变薄，垂直和批量扩散以及丝网印刷变得极其困难。
发明内容
根据实施方式，通过精确地将掺杂物同时横向地跨底层衬底的层放置并且置入衬底的主体，而制造出太阳能电池。离子射束受到引导，以产生形成网格线的重度掺杂区以及网格线之间的轻度掺杂区。通过调整参数，原子掺杂物分布同时匹配于：使用预定衬底掺杂程度在适当的深度提供电气结，以及在衬底表面提供形成接触所需的电阻率。这样的独立控制是注入方法所独有的。
在第一方面中，一种半导体器件包括具有如下表面的衬底，该表面包括：以掺杂物掺杂到第一掺杂程度的绒面(textured)区域，以及形成网格线并且以掺杂物掺杂到比第一掺杂程度更大的第二掺杂程度的非绒面区域。衬底为p型或n型；掺杂物为相反类型。所述半导体器件包括导电触指，其耦合到网格线和底部部分，该底部部分耦合到含有杂质的金属接触。绒面区域为受光区域。
优选地，每个绒面区域包括多个绒面元件，比如具有<111>平面的锥形元件、圆拱形元件或者降低从受光区域反射的光量的任何其他起伏(上升和下降)结构。
多个绒面元件中的每个绒面元件中的掺杂物具有均匀的厚度或者沿元件表面变化的厚度。
在一个实施方式中，每个绒面区域都覆盖有防反射涂层。非绒面区域中的掺杂物中散布有金属元素。
在第二方面中，一种制造太阳能电池的方法包括将均匀的离子射束引导到具有非绒面区域和绒面区域的衬底的表面上。掺杂物以第一密度注入绒面区域，并且以比第一密度更大的第二密度注入非绒面区域以形成网格线。网格线耦合到接触指。
在一个实施方式中，绒面区域包括多个单独的绒面元件，比如锥形元件。备选地，多个绒面元件为半球形。可将射束成形为逐个向每个绒面元件中或者同时向成组绒面元件中注入掺杂物。
旋转射束、衬底中之一或者全部二者，从而使射束基本上垂直于多个绒面元件中的每个绒面元件的表面。还可以将射束在整个表面上扫描，从而将掺杂物注入到绒面区域和非绒面区域中。
在一个实施方式中，使用一团等离子区来保形地掺杂整个衬底以及表面上的任何绒面特征。
在一个实施方式中，非绒面区域中的掺杂物的电阻为大约每平方20欧姆，并且绒面区域中的掺杂物的电阻小于大约每平方100欧姆。绒面区域中的掺杂物与绒面区域之间的结是缓变的，非绒面区域中的掺杂物与非绒面区域之间的结是缓变的，或者两者都是。
所述方法还包括在网格线与接触指之间形成硅化物以及将接触指耦合到总线。
在第三方面中，一种制造太阳能电池的方法包括对衬底的顶表面进行蚀刻，以在平面区域之间形成绒面受光区域。绒面区域包含锥形元件。该方法还包括将离子射束引导至顶表面上，从而将掺杂物以第一密度注入绒面区域中，并且以比第一密度更大的第二密度注入平面区域中以形成网格线。绒面区域中的掺杂物的电阻小于每平方100欧姆，并且平面区域中的掺杂物的电阻为大约每平方20欧姆。该方法还包括将接触指耦合到网格线。
在第四方面中，一种太阳能电池包括具有顶层和底层的衬底。顶层具有如下表面，该表面包括：以掺杂物掺杂到第一掺杂程度的锥形区域，以及形成网格线并且以掺杂物掺杂到比第一掺杂程度更大的第二掺杂程度的基本上为平面的区域。平面区域中的那些相邻区域的间隔小于50微米。网格线通过硅化物元件耦合到金属触指，并且金属接触耦合到底层。
在第五方面中，一种用于制造太阳能电池的系统包括用于产生离子的源、射束成形器和控制器。射束成形器将包含离子的射束引导至衬底上。控制器引导射束成形器，使得衬底的绒面受光区域被以离子注入到第一密度并且衬底的限定网格线的平面区域被以离子注入到比第一密度更大的第二密度。
控制器引导射束成形器将射束步进，以对受光区域中的绒面元件逐个进行注入。当射束被引导至衬底上时，控制器还旋转、倾斜或者平移衬底，或者这些运动的任何组合。
控制器引导射束成形器以及注入的持续时间，从而使受光区域的电阻小于每平方100欧姆并且平面区域的电阻小于每平方20欧姆。
附图说明
图1示出了耦合到负载的一种现有技术太阳能电池。
图2为根据一个实施方式的太阳能电池的一部分的侧截面图。
图3为图2的太阳能电池的锥形小面的顶视图。
图4为针对图2的太阳能电池的平面区域的、掺杂浓度比对深度的曲线图。
图5为针对图2的太阳能电池的非平面(绒面)区域的、掺杂浓度比对深度的曲线图。
图6A和图6B示出了根据一个实施方式的、在太阳能电池的射极区域和小面区域中连续离子注入。
图7示出了根据一个实施方式的、具有均匀的掺杂浓度的太阳能电池的锥形小面。
图8A-图8C示出了根据不同实施方式的、到太阳能电池的有小面的区域中的离子注入。
图9A-图9F示出了在根据一个实施方式的、用于形成锥形小面的连续制造步骤中的太阳能电池。
图10为根据一个实施方式的、用于制造太阳能电池的步骤的流程图。
图11为根据一个实施方式的、用于制造太阳能电池的系统的框图。
具体实施方式
本发明的实施方式针对通过重度掺杂太阳能电池的选择性射极区域并且较为轻度地掺杂其受光区域来制造太阳能电池的方法。在一些实施方式中，选择性射极区域和受光区域在同一处理步骤中形成。
为了太阳能电池的最佳性能，轻度地掺杂受光区域，以提供均匀的高薄膜电阻。较为重度掺杂的区域增加电子空穴复合的机会，并因而降低将光子转换为电能的效率。根据实施方式，轻度地掺杂太阳能电池的受光区域的n掺杂层，以提供每平方80欧姆与160欧姆之间，优选地为每平方100欧姆的薄膜电阻，或者大约1E+19cm-3的离子掺杂。优选地，在其上形成有导电触指的网格线被更为重度地掺杂，以将产生的电荷耦合到触指接触。为了提供期望的电阻，将选择性射极区域掺杂至每平方10-40欧姆，优选地为每平方25欧姆的薄膜电阻，或者大约1E+20cm-3的离子掺杂。优选地，以p型层掺杂太阳能电池的背面，以使其具有每平方30欧姆与70欧姆之间的电阻。
一些实施方式使用成形并平行的射束来注入掺杂物，从而允许注入过程更为快速地完成并且具有更高的生产率。这些射束帮助降低所制造出的器件中的有害掺杂物的数量。
图2示出了根据一个实施方式的太阳能电池200的一部分，其中有光束250撞击在受光区域225上。如所有附图中的情况那样，相同标记始终指代相同元件。太阳能电池200包括p型衬底210，其夹在底部金属接触205与n型射极层215之间。衬底210可以是单晶硅或多晶硅、薄膜沉积硅，或者用于制造太阳能电池和其他半导体器件的任何其他材料。
p型衬底210与n型射极层215之间的界面形成p-n结213。受光区域225包含一个或多个有小面的区域。通过将通常会从太阳能电池200反射开的光引导回太阳能电池200上，有小面的区域225减少由反射损耗掉的光量，从而增加太阳能电池200的效率。在一个实施方式中，有小面的区域225还覆盖有防反射涂层。
太阳能电池200还包含n型掺杂的区域220(网格线)，其具有耦合到金属接触指240的基本上为平面的顶表面。
一般而言，太阳能电池包含比图2中所示更多的有小面区域和选择性射极。图2示出了仅一个有小面区域(包含小面230A和230B)以及仅一个射极区域，这只是为了简化附图。
在图2的实施方式中，小面230A和230B各自为四面锥形元件，具有暴露的<111>平面。
图3为锥形小面230A的顶视图。优选地，小面230A的高度小于10微米，且基底具有类似的宽度。本领域中技术人员将意识到，示例性小面230A可以具有将光反射回太阳能电池板200的表面上的其他尺寸以及其他形状。作为一个其他示例，小面230A为圆拱形。
图4示出了针对平面区域220，标绘原子浓度比对从电池200的顶表面起的深度(以埃为单位)的曲线图300。曲线图300示出了对于最为靠近顶表面的第一注入级的浓度301、第二(主)注入级的浓度302、最为靠近PN结213的第三注入级的浓度303，以及总浓度310。
图5示出了沿着非平面的、绒面(例如，具有暴露的<111>表面)区域225，标绘原子浓度比对从电池200的顶表面起的深度(以埃为单位)的曲线图400。曲线图400示出了对于最为靠近顶表面的第一注入级的浓度401、第二(主)注入级的浓度403、最为靠近p-n结213的第三注入级的浓度405，以及总浓度410。这种掺杂分布降低了“死层”效应。
这种<111>和<100>晶面硅的同时注入导致均匀的原子分布。表面区域被呈现给注入射束，也就是说，指向<100>平面。由于几何结构的变化，注入<111>平面的剂量是同时注入<100>平面中的剂量的0.578。另外，入射角对于不同朝向的平面发生变化，并且因此离子的穿透将如余弦函数般变化。例如，对于120keV射束，预计的范围可以从来自<100>平面表面的1610埃到来自<111>平面表面的998埃变化。
图6A和图6B示出了在连续步骤中使用离子射束源500对图2的区域220和230A进行的掺杂。图6A示出了离子射束源500首先被置于衬底200的表面上，在基本上为平面的区域220中注入n型掺杂物。接下来，如图6B中所示，放置源500以便将n型掺杂物注入到小面230A的右手部分和左手部分中。小面230A的左手部分和右手部分两者都被掺杂为预定的密度和分布。有益地，对这些左手部分和右手部分的处理并不需要源500与晶片几何结构的精确对齐或者使用狭小聚焦的离子射束。
可以对在注入角度中并因而在注入区域中的这种变化加以利用。随着注入角度偏离法向入射，掺杂物的横向深度被减小。类似地，射束作为角度的余弦在更大面积上分散。因此，掺杂物的剂量得以减少。可以使用这样的变化来产生高掺杂浓度的区域和更深的结比对较低掺杂浓度的区域和较浅的结。
由小面230A所提供的增加的表面积具有其他优点。作为一个示例，在离子注入期间，增加的表面积散开由源500产生的热量，从而允许使用提高生产率的更高密度的射束。
如图6A中所示，左边部分具有被标记为240的基底。在一个实施方式中，射束的直径远大于基底240，从而允许单个射束来同时掺杂左边部分和右边部分二者。在其他实施方式中，射束的直径大至足以同时对多个小面进行注入。本领域中技术人员将意识到，其他射束直径也可使用。此外，可以使用全包围的等离子体射束，以此来保形地掺杂表面上的绒面特征。
在一个实施方式中，当源500被置于区域220和230A上时，源500发射具有相同密度(例如，每秒离子)的射束。由于区域230A与源成角度，因此其为射束提供更大的表面积，从而导致相同电荷在区域230A中被沉积于比区域220中更大的面积上。相应地，区域220比区域230A更高地掺杂。
在一个实施方式中，示例性小面230A由被沿<111>平面蚀刻的硅衬底形成，从而产生与衬底表面成54.7°角度的小面平面。
图6A-图6C示出了不垂直于小面230A的倾斜(有角)面的射束源500。在该布置中，沿小面230A的掺杂厚度从小面230A的基底到其顶点增加。
图7示出了这样一种布置：在其中将射束源550垂直于小面230A的倾斜面放置。在第一位置(标记为550A)中，源550垂直于小面230A的左表面。在第二位置(标记为550B)中，射束源垂直于小面230A的右表面。
在一个实施方式中，将单个射束源连续置于第一位置和第二位置(550A和550B)；在另一实施方式中，将不同射束源同时置于第一位置和第二位置，使得左边部分和右边部分同时受到掺杂。
根据实施方式，以不同方式将衬底200与一个或多个离子射束源相互移动，以掺杂基本上为平面的区域220和包括单独小面230A和230B的有小面区域230。为了简化附图，图8A-图8C示出了仅单个有小面区域230。作为一个示例，图8A示出了来自一个或多个垂直于衬底200的顶表面瞄准的离子射束源的离子。
在一个实施方式中，小面230A和230B通过在它们中的每一个上单独地扫描离子射束而个别受到掺杂。备选地，不同的平行离子射束同时掺杂各个小面230A和230B。以这种方式，可以个别地控制每个小面或者成组的小面的掺杂程度，从而允许太阳能电池200的更加精确的和经调整的掺杂分布。
如由图8B下的垂直和环形线所示，可以相对于一个或多个离子射束源，对衬底200进行垂直平移(沿x轴)、旋转(沿y轴)、倾斜或者这些移动的任何组合，从而使衬底200的整个表面都被掺杂物注入。在图8C中所示的示例中，一个或多个离子射束源被引导使得离子被引导为基本上垂直地指向锥形小面的表面。此外，可以相对于一个或多个离子射束源对衬底200进行垂直平移、旋转、倾斜或者这些移动的任何组合，以用掺杂物注入衬底200的整个表面。事实上，离子射束可以是保形地对这些绒面特征进行掺杂的整个包围的等离子区。这对于多级硅尤为有益，在多级硅中，表面上的小面化不具有唯一的几何形状并且此外可以具有可由视线掺杂物系统观察到的针孔和凹角小丘特征。这样的保形掺杂将提供与任何表面特征无关的一致的掺杂。
在另外的实施方式中，离子射束被引导至衬底200上，使得其以垂直于平面区域或者垂直于小面230A和230B的表面以外的角度撞击。这些其他角度可以基于期望的掺杂分布来确定，以适应手头的特定应用。在一个实施方式中，角度与垂直于衬底表面的顶部的情况的偏离不超过20度。
图9A-图9F为根据一个实施方式、在用于制造太阳能电池的步骤中半导体器件600的一部分的侧截面图。一般而言，太阳能电池包含许多与图9A-图9F中所示相类似的部分。仅示出了图9A-图9F中的部分而未示出任何其他部分只是为了简化附图。
如图9A中所示，p型衬底601被光阻材料650遮盖，留下区域655A和655B处于暴露状态。光阻材料650使用本领域中技术人员已知的光刻法或者标准接触印刷或者喷墨印刷技术来形成图案。在材料650下的、要形成网格线的区域大约有50到100微米宽。相应地，较大几何结构提供了精度相对于具有亚微米几何结构的半导体所需的技术而言较低的光刻技术的使用。
接下来，如在图9B中所示，对器件600的顶层进行蚀刻以形成有小面的区域，并且去除牺牲材料650以暴露出基本上为平面的表面603。优选地，蚀刻使用酸性或碱性蚀刻剂，比如氢氧化钾(KOH)，以暴露衬底601的<111>平面(绒面区域)，该区域包含锥形小面区域605A和605B。本领域中技术人员将意识到，区域605A和605B可以使用其他技术形成，这些技术包括光学、机械和化学技术。本领域中技术人员还将意识到，区域605A和605B可以形成为不同于锥形的形状，比如半圆拱顶、起伏的波纹以及其他绒面形状。
接下来，如图9C-图9E中所示，区域605A、603和605B全都相应地使用被引导为与表面603基本上垂直的均匀n型掺杂物射束来进行注入，从而相应地形成区域615A、613和615B。如以上参考图6A-图6C所解释，由于区域615A和615B具有成角度的表面而区域613不具有，因此每立方厘米n型掺杂物的密度在区域613中比在区域615A和615B中更大。相应地，区域615A和615B的薄膜电阻比区域613的更大。区域613也被称为选择性射极区域。
图9F示出了在后续处理步骤之后的器件600。在这些(未示出的)步骤中，将金属离子薄层620注入到区域613的顶表面中，其随后被盖上金属导电触指660。金属离子610有助于更好地匹配触指660与选择性射极613之间的选出功。金属离子610的例子包括但不限于：钽、铝、铜或者这些离子的任何组合。优选地，器件600包含多个触指660，它们全部由(未示出的)总线进行耦合。在一个实施方式中，触指660为50微米-100微米宽并以大约2毫米-3毫米隔开。本领域中技术人员将意识到，其他宽度和间隔也是可能的。
接下来，也作为这些后续处理步骤中之一，向衬底601的底部中注入p型离子，形成P+区域630，从而提高随后形成的层的电导率。随后向P+区域630中注入额外的金属离子，从而形成附着到金属背面接触645的金属硅区域640。区域640降低P+硅630与接触645之间的选出功。
本领域中技术人员将意识到，像本说明书中所描述的所有处理步骤一样，图9A-图9F中所描述的处理步骤仅仅是示例说明性的。可以删除一些步骤，可以替换其他步骤，并且可以以不同顺序执行步骤。作为一个示例，器件600的整个表面都有小面。随后使用激光束来形成基本上为平面的区域，在该区域中要形成选择性射极(603)。激光束熔化选择性射极区域中的小面，从而熔化小面的顶峰并填充顶峰之间的谷底。参考图9C-图9E讨论的掺杂和其他步骤于随后执行。
本领域中技术人员将意识到根据实施方式的、用于制造太阳能电池和其他半导体器件的许多其他方式。作为一个示例，通过注入或沉积掺杂的膏剂并于随后迅速对衬底进行退火(比如使用闪光灯或激光退火)来放置掺杂物，以提供网格线掺杂层。
图10示出了根据一个实施方式，用于制造太阳能电池的过程700的步骤。过程700始于步骤701。在步骤703中，在半导体衬底上形成平面区域(例如，图9C中的元件613)和非平面区域(例如，图9C中的元件615A和615B)。接下来，在步骤705中，根据期望的太阳能电池特性来确定掺杂分布(例如，如图5中所示的基于深度的掺杂程度)。接下来，在步骤707中，使用离子射束来掺杂下一元件(例如，射极区域、有小面区域或者单个小面)。在步骤709中，所述过程确定是否有另一元件(例如，下一小面)需要掺杂。如果有另一元件，那么在步骤711中移动离子射束，并且过程循环回到步骤707。在一个其中使用等离子体的备选实施方式中，不在步骤711中步进离子射束，而是使用等离子体全包含射束来全包含衬底的整个表面。否则，过程继续到步骤713。
可以在任何数量的级中对衬底进行注入，以适合于期望的掺杂分布。作为一个示例，如图5中的多个掺杂分布所示，注入在三个级中执行。
在步骤713中，形成接触(例如，触指、总线以及任何背面接触)，之后是步骤715，在其中对衬底进行退火。对衬底进行退火——将其加热到熔点以下的温度——恢复被离子注入破坏的晶体结构。接下来，在步骤717中，执行任何后处理步骤。这些后处理步骤包括：对成品衬底进行清洗、从其清除任何污染物、并向其添加任何保护涂层。最后，在步骤719中，过程终止。
在一个实施方式中，衬底在其表面上具有对齐标记，用于在步骤711中对射束进行定向和步进。
尽管步骤711描述了被移动的是离子射束，但是将会明白，比如像图8B和图8C中所示的那样，可以移动衬底，而不是射束。
图11示出了根据一个实施方式的、用于制造太阳能电池的系统800。系统800包括单气体输送模块805、离子源810、加速器815、倾斜射束扫描、质谱分析和射束成形模块820、测量与控制模块825以及用以操纵衬底600的单装载锁830。在(未示出的)另一实施方式中，用等离子体源模块来代替单气体输送模块805和离子源810，并且用散布器来代替射束成形模块820，用来以等离子体射束全包含衬底600。
在一个实施方式中，离子源810具有长槽。在一个备选实施方式中，离子源810包括多个离子源用于形成宽射束和窄射束或者等离子体射束。离子源810产生所有元素的高达100mA的射束电流，但也可以每次专用于单个元素。离子射束810还对于每个具体应用即插兼容：当需要具有不同离子射束源的新应用时，可以拔出离子源810并用满足下一应用的要求(例如，不同掺杂物)的不同源来替代。离子源810具有小于5cm至10cm的射束槽和1cm至2cm的宽度。备选地，离子源810为等离子体源并且可以配置成产生宽射束。长度可以是拉伸以覆盖156mm x 156mm衬底的一个维度或者该衬底的全部两个维度。
在工作中，单气体输送模块805和离子源810一同产生离子射束，该离子射束由加速器815以直流方式或者脉冲方式进行加速。在一个实施方式中，加速器具有提取和聚焦元件，其具有比如在15keV与150keV之间的有限能量范围。在其他实施方式中，使用其他有限能量范围。在一个实施方式中，为了限制系统800的能量需求，加速器815不工作在100keV以上。在一个实施方式中，如图9B中所示，在衬底600被蚀刻之后，将其插入到系统800中。
接下来，使用射束扫描、质谱分析和成形模块820来控制由此产生的倾斜射束，以对衬底600进行注入，比如图9C-图9D中所示(对于衬底600而言)，或者如图6A、图6B和图7中所示(对于图2的衬底200而言)。在一个实施方式中，射束扫描、质谱分析和成形模块820包括静电和电磁光学器件，用以将射束聚焦或成形到衬底600上。在射束撞击在衬底600上之前或与此同时，使用测量与控制模块825对该射束进行进一步测量和控制。衬底600可以步进到射束前，以使用单个射束来覆盖衬底600的整个表面，从而根据预定图案来注入掺杂物。衬底600还可以被旋转、平移和倾斜，比如图8A-图8C中所示那样。
离子射束可以是如下的宽射束(例如，直径为数十厘米)，其提供跨衬底600的平面，亦即，跨衬底600的平面扫描的恒定离子流。射束优选地以匀速跨衬底600的平面、跨整个平面和有小面的区域进行扫描。扫描速率可被改变，以通过重叠射束的高斯分布来实现变化的高掺杂区域和低掺杂区域。
离子射束引起局部加热。因此，可以伴随较宽离子注入射束使用慢扫描，并且可以伴随较窄射束使用更快的扫描。为了达到所需的掺杂密度，可能需要多次经过，比如由图5中的三个注入级所示的那样。
优选地，射束扫描、质谱分析和成形模块820包括用于根据实施方式对衬底进行掺杂的逻辑。备选地，该逻辑被包含在系统800的其他元件中。优选地，该逻辑包括：存储器，其包含用于执行处理步骤(例如，图10中的步骤703、705、707、709、711、713、715和717中的任何一个或多个步骤)的机器可读指令；以及用于执行这些步骤的处理器。
在一个实施方式中，衬底600为156mm x 156mm，但系统800也能够处理其他尺度的晶片。在备选实施方式中，在射束之前将晶片部署在移动压盘上，或者将托盘上的一个或多个晶片暴露于射束或者等离子体。
最后，通过单装载锁830将经处理的单衬底600从系统800中移除。
人们将会明白，上述实施方式只是示例性的。例如，实施方式示出了具有n型射极层的p型衬底。将会明白，根据实施方式，还可以制造出具有p型射极层的n型衬底。
以下各自通过引用整体并入本文的共同待决专利申请描述了制造太阳能电池的不同方式：序号XX/XXX，XXX，标题为“Solar CellFabrication Using Implantation”，由Babak Adibi和Edward S.Murrer于2009年6月11日提交，并具有律师案卷号码SITI-00100；序号XX/XXX，XXX，标题为“Application Specific Implant System andMethod for Use in Solar Cell Fabrications”，由Babak Adibi和EdwardS.Murrer于2009年6月11日提交，并具有律师案卷号码SITI-00200；以及序号XX/XXX，XXX，标题为“Formation of Solar Cell-SelectiveEmitter Using Implant and Anneal Method”，由Babak Adibi和EdwardsS.Murrer于2009年6月11日提交，并具有律师案卷号码SITI-00300。
虽然所述实施方式针对太阳能电池，但其他实施方式可以用于具有任何数量的掺杂分布的其他类型半导体器件。这些分布包括渐进分布和突变分布，比如箱式结，以及其他防止形成电气屏障的分布。
尽管已讨论的现有技术中的局限，但将会明白各实施方式不一定会解决所有局限。一些实施方式可能解决一些局限，而其他实施方式可能解决其他局限。
本领域中技术人员将很容易地明白，可对实施方式作出其他修改，而不背离本发明如由随附权利要求书所限定的精髓和范围。

Claims (33)

1.一种半导体器件，其包括：
具有如下表面的衬底，所述表面包含以掺杂物掺杂至第一掺杂程度的绒面区域，以及形成网格线并且以掺杂物掺杂至比所述第一掺杂程度更大的第二掺杂程度的非绒面区域；以及耦合到所述网格线的导电触指。
2.根据权利要求1的半导体器件，其中所述绒面区域是受光的。
3.根据权利要求1的半导体器件，其中每个所述绒面区域包括多个绒面元件。
4.根据权利要求3的半导体器件，其中所述绒面元件中的每一个是锥形的。
5.根据权利要求4的半导体器件，其中所述绒面元件中的每一个具有<111>平面。
6.根据权利要求3的半导体器件，其中所述绒面元件中的每一个是圆拱形的。
7.根据权利要求3的半导体器件，其中所述多个绒面元件中的每一个上的掺杂物的厚度是均匀的。
8.根据权利要求1的半导体器件，其中所述绒面区域中的每一个覆盖有防反射涂层。
9.根据权利要求1的半导体器件，其中所述掺杂物为n型，并且所述衬底为p型。
10.根据权利要求1的半导体器件，其中所述掺杂物为p型，并且所述衬底为n型。
11.根据权利要求1的半导体器件，其中所述非绒面区域中的掺杂物中散布有金属元素。
12.根据权利要求1的半导体器件，其中所述衬底具有底部部分，该底部部分耦合到含有杂质的金属接触。
13.一种制造太阳能电池的方法，其包括：
将衬底的具有非绒面区域和绒面区域的表面暴露于离子，从而将掺杂物以第一密度注入到所述绒面区域中，并且以比所述第一密度更大的第二密度注入到所述非绒面区域中以形成网格线；以及
将接触指耦合到所述网格线。
14.根据权利要求13的方法，其中所述绒面区域各自包括多个绒面元件。
15.根据权利要求14的方法，其中所述多个绒面元件是锥形的。
16.根据权利要求14的方法，其中所述多个绒面元件是半球形的。
17.根据权利要求13的方法，其中暴露所述表面包括将包含所述掺杂物的离子射束引导至所述表面上。
18.根据权利要求17的方法，其中所述射束被成形为将掺杂物逐个注入到所述多个绒面元件中的每一个中。
19.根据权利要求17的方法，其还包括跨所述表面线性地扫描所述射束，从而注入所述掺杂物。
20.根据权利要求13的方法，其中暴露所述表面包括用等离子体射束全包含所述表面。
21.根据权利要求13的方法，其中所述绒面区域是受光的。
22.根据权利要求13的方法，其还包括旋转所述离子的源、所述衬底或者两者，从而使所述离子的源基本上垂直于所述多个绒面元件的每一个的表面。
23.根据权利要求13的方法，其中所述非绒面区域中的掺杂物的电阻为大约20欧姆/平方。
24.根据权利要求13的方法，其中所述绒面区域中的掺杂物的电阻为大约100欧姆/平方。
25.根据权利要求13的方法，其还包括将所述网格线耦合到金属接触指。
26.根据权利要求25的方法，其还包括在所述网格线与所述接触指之间形成硅化物。
27.一种制造太阳能电池的方法，其包括：
蚀刻衬底的顶表面以形成位于平面区域之间的绒面受光区域，其中所述绒面区域包括锥形元件；
将离子射束引导至所述顶表面上，从而将掺杂物以第一密度注入到所述绒面区域中，并且以比所述第一密度更大的第二密度注入到所述平面区域中以形成网格线，其中所述绒面区域中的掺杂物的电阻小于每平方100欧姆，并且所述平面区域中的掺杂物的电阻为大约每平方20欧姆；以及
将接触指耦合到所述网格线。
28.一种太阳能电池，其包括：
具有顶层和底层的衬底，其中所述顶层具有如下表面：该表面包含用掺杂物掺杂至第一掺杂程度的锥形区域，以及形成网格线并用掺杂物掺杂至比所述第一掺杂程度更大的第二掺杂程度的基本上为平面的区域，相邻的基本上为平面的区域之间的距离小于50微米，并且所述衬底具有小于50微米的厚度；
将所述网格线耦合到金属触指的硅化物元件；以及
耦合到所述底层的接触。
29.一种用于制造太阳能电池的系统，其包括：
用于产生离子的源；
射束成形器，其用于将包含所述离子的射束引导至衬底上；以及
控制器，其被编程用以将所述射束引导至所述衬底上，使得所述衬底的绒面受光区域被以所述离子注入到第一密度，并且所述衬底的限定网格线的平面区域被以所述离子注入到比所述第一密度更大的第二密度。
30.根据权利要求29的系统，其中所述控制器还被编程用以步进所述射束，以逐个对所述受光区域中的绒面元件进行注入。
31.根据权利要求30的系统，其中所述控制器还被编程用以在所述射束被引导至所述衬底上时，执行旋转、倾斜或者平移所述衬底的任何组合。
32.根据权利要求30的系统，其中所述控制器被编程用以引导所述射束，从而使所述受光区域的电阻为大约每平方100欧姆。
33.根据权利要求30的系统，其中所述控制器被编程用以引导所述射束，从而使所述平面区域的电阻为大约每平方10欧姆。
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