CN103280489B - 一种实现选择性发射极的方法 - Google Patents
一种实现选择性发射极的方法 Download PDFInfo
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- CN103280489B CN103280489B CN201310187394.1A CN201310187394A CN103280489B CN 103280489 B CN103280489 B CN 103280489B CN 201310187394 A CN201310187394 A CN 201310187394A CN 103280489 B CN103280489 B CN 103280489B
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- ion implantation
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- silicon chip
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005468 ion implantation Methods 0.000 claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- 229910002804 graphite Inorganic materials 0.000 claims description 30
- 239000010439 graphite Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims 3
- 238000002347 injection Methods 0.000 abstract description 19
- 239000007924 injection Substances 0.000 abstract description 19
- 238000010884 ion-beam technique Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310187394.1A CN103280489B (zh) | 2013-05-17 | 2013-05-17 | 一种实现选择性发射极的方法 |
Applications Claiming Priority (1)
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CN201310187394.1A CN103280489B (zh) | 2013-05-17 | 2013-05-17 | 一种实现选择性发射极的方法 |
Publications (2)
Publication Number | Publication Date |
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CN103280489A CN103280489A (zh) | 2013-09-04 |
CN103280489B true CN103280489B (zh) | 2016-02-03 |
Family
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Family Applications (1)
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CN201310187394.1A Active CN103280489B (zh) | 2013-05-17 | 2013-05-17 | 一种实现选择性发射极的方法 |
Country Status (1)
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CN (1) | CN103280489B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105845776A (zh) * | 2016-04-26 | 2016-08-10 | 泰州中来光电科技有限公司 | 局部背场n型光伏电池的制备方法及其电池和组件、系统 |
CN109256314B (zh) * | 2018-10-11 | 2020-08-28 | 中国电子科技集团公司第四十八研究所 | 一种基片的定点离子注入装置及注入方法 |
CN115910832B (zh) * | 2022-12-19 | 2023-12-15 | 扬州国宇电子有限公司 | 一种用于测试离子是否注入的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102150278A (zh) * | 2008-06-11 | 2011-08-10 | 因特瓦克公司 | 使用注入和退火方法的太阳能电池-选择性发射极的形成 |
CN202120962U (zh) * | 2011-05-24 | 2012-01-18 | 上海神舟新能源发展有限公司 | 一种选择性发射极单晶硅太阳能电池 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101969032B1 (ko) * | 2011-09-07 | 2019-04-15 | 엘지전자 주식회사 | 태양전지 및 이의 제조방법 |
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2013
- 2013-05-17 CN CN201310187394.1A patent/CN103280489B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102150278A (zh) * | 2008-06-11 | 2011-08-10 | 因特瓦克公司 | 使用注入和退火方法的太阳能电池-选择性发射极的形成 |
CN202120962U (zh) * | 2011-05-24 | 2012-01-18 | 上海神舟新能源发展有限公司 | 一种选择性发射极单晶硅太阳能电池 |
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CN103280489A (zh) | 2013-09-04 |
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Effective date of registration: 20220606 Address after: 310053 No. 1, Jisheng Road, Jianshan new area, Haining City, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310053 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
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Address after: 314417 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 310053 No. 1, Jisheng Road, Jianshan new area, Haining City, Jiaxing City, Zhejiang Province Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |
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