CN103872179B - 一种提高薄膜太阳能电池效率的制备方法 - Google Patents
一种提高薄膜太阳能电池效率的制备方法 Download PDFInfo
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- CN103872179B CN103872179B CN201410076359.7A CN201410076359A CN103872179B CN 103872179 B CN103872179 B CN 103872179B CN 201410076359 A CN201410076359 A CN 201410076359A CN 103872179 B CN103872179 B CN 103872179B
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- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000007739 conversion coating Methods 0.000 claims description 43
- 230000005693 optoelectronics Effects 0.000 claims description 43
- 210000001142 back Anatomy 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000006641 stabilisation Effects 0.000 abstract description 4
- 238000011105 stabilization Methods 0.000 abstract description 4
- 238000013459 approach Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002679 ablation Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UQRONKZLYKUEMO-UHFFFAOYSA-N 4-methyl-1-(2,4,6-trimethylphenyl)pent-4-en-2-one Chemical group CC(=C)CC(=O)Cc1c(C)cc(C)cc1C UQRONKZLYKUEMO-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410076359.7A CN103872179B (zh) | 2014-03-05 | 2014-03-05 | 一种提高薄膜太阳能电池效率的制备方法 |
Applications Claiming Priority (1)
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CN201410076359.7A CN103872179B (zh) | 2014-03-05 | 2014-03-05 | 一种提高薄膜太阳能电池效率的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103872179A CN103872179A (zh) | 2014-06-18 |
CN103872179B true CN103872179B (zh) | 2016-09-28 |
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CN201410076359.7A Active CN103872179B (zh) | 2014-03-05 | 2014-03-05 | 一种提高薄膜太阳能电池效率的制备方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN209981240U (zh) * | 2018-08-06 | 2020-01-21 | 广东汉能薄膜太阳能有限公司 | 一种光伏发电组件 |
CN112054078B (zh) * | 2019-06-05 | 2024-03-08 | 东君新能源有限公司 | 薄膜太阳能电池的节宽设计方法、装置和薄膜太阳能电池 |
CN116705897A (zh) * | 2022-02-28 | 2023-09-05 | 宁德时代新能源科技股份有限公司 | 用于制造太阳能电池的方法、装置、制造设备及电池 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101980369A (zh) * | 2010-08-30 | 2011-02-23 | 河南安彩高科股份有限公司 | 薄膜型太阳能电池及其制作方法 |
CN202210525U (zh) * | 2011-10-10 | 2012-05-02 | 河北汉盛光电科技有限公司 | 一种半透明的非晶硅太阳能电池 |
CN103280480A (zh) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | 薄膜太阳能电池基板、薄膜太阳能电池及其制备方法 |
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2014
- 2014-03-05 CN CN201410076359.7A patent/CN103872179B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101980369A (zh) * | 2010-08-30 | 2011-02-23 | 河南安彩高科股份有限公司 | 薄膜型太阳能电池及其制作方法 |
CN202210525U (zh) * | 2011-10-10 | 2012-05-02 | 河北汉盛光电科技有限公司 | 一种半透明的非晶硅太阳能电池 |
CN103280480A (zh) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | 薄膜太阳能电池基板、薄膜太阳能电池及其制备方法 |
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CN103872179A (zh) | 2014-06-18 |
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Address after: 517000 hi tech 5 road, New Technology Development Zone, Heyuan, Guangdong Applicant after: Guangdong Han Neng thin film solar Co., Ltd Address before: 517000 hi tech 5 road, New Technology Development Zone, Heyuan, Guangdong Applicant before: GUANGDONG HANERGY SOLAR PV CO., LTD. |
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Effective date of registration: 20190202 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 517000 Heyuan New Technology Development Zone, Guangdong Province Patentee before: Guangdong Han Neng thin film solar Co., Ltd |
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Effective date of registration: 20190307 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
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