CN101315883A - 多晶硅层的制法、tft及其制法及oled显示装置 - Google Patents
多晶硅层的制法、tft及其制法及oled显示装置 Download PDFInfo
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- CN101315883A CN101315883A CNA2008101087986A CN200810108798A CN101315883A CN 101315883 A CN101315883 A CN 101315883A CN A2008101087986 A CNA2008101087986 A CN A2008101087986A CN 200810108798 A CN200810108798 A CN 200810108798A CN 101315883 A CN101315883 A CN 101315883A
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- metal silicide
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (47)
Applications Claiming Priority (2)
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KR1020070053314A KR100875432B1 (ko) | 2007-05-31 | 2007-05-31 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR53314/07 | 2007-05-31 |
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CN101315883A true CN101315883A (zh) | 2008-12-03 |
CN101315883B CN101315883B (zh) | 2010-12-08 |
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CN2008101087986A Active CN101315883B (zh) | 2007-05-31 | 2008-06-02 | 多晶硅层的制法、tft及其制法及oled显示装置 |
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US (2) | US20080296565A1 (zh) |
EP (1) | EP2009680B1 (zh) |
JP (1) | JP5090253B2 (zh) |
KR (1) | KR100875432B1 (zh) |
CN (1) | CN101315883B (zh) |
TW (1) | TWI381451B (zh) |
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2007
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- 2008-05-26 JP JP2008137033A patent/JP5090253B2/ja active Active
- 2008-05-29 EP EP08157167.1A patent/EP2009680B1/en active Active
- 2008-05-30 US US12/130,340 patent/US20080296565A1/en not_active Abandoned
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US9070717B2 (en) | 2009-11-20 | 2015-06-30 | Samsung Display Co., Ltd. | Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same |
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Also Published As
Publication number | Publication date |
---|---|
EP2009680B1 (en) | 2015-04-01 |
US8790967B2 (en) | 2014-07-29 |
KR20080105563A (ko) | 2008-12-04 |
TW200905751A (en) | 2009-02-01 |
EP2009680A1 (en) | 2008-12-31 |
US20120220084A1 (en) | 2012-08-30 |
JP5090253B2 (ja) | 2012-12-05 |
CN101315883B (zh) | 2010-12-08 |
TWI381451B (zh) | 2013-01-01 |
KR100875432B1 (ko) | 2008-12-22 |
JP2008300831A (ja) | 2008-12-11 |
US20080296565A1 (en) | 2008-12-04 |
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