JP2008300831A - 多結晶シリコン層の製造方法、これを利用して形成された薄膜トランジスタ、その製造方法及びこれを含む有機電界発光表示装置 - Google Patents
多結晶シリコン層の製造方法、これを利用して形成された薄膜トランジスタ、その製造方法及びこれを含む有機電界発光表示装置 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 173
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 74
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 408
- 239000002184 metal Substances 0.000 claims abstract description 408
- 238000002425 crystallisation Methods 0.000 claims abstract description 162
- 230000008025 crystallization Effects 0.000 claims abstract description 149
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 140
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 139
- 230000001939 inductive effect Effects 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 112
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- 238000010438 heat treatment Methods 0.000 claims description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 30
- 238000005247 gettering Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 229910004166 TaN Inorganic materials 0.000 claims 4
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- 238000009832 plasma treatment Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 494
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 15
- 239000010936 titanium Substances 0.000 description 11
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- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- 229910052581 Si3N4 Inorganic materials 0.000 description 6
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- 239000000463 material Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- 239000011651 chromium Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
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- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66409—Unipolar field-effect transistors
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Abstract
【解決手段】本発明は基板上に非晶質シリコン層を形成し、非晶質シリコン層を結晶化誘導金属を利用して多結晶シリコン層に結晶化し、多結晶シリコン上部または下部の一定領域と接する金属層または金属シリサイド層パターンを形成し、基板を熱処理して多結晶シリコン層でチャネル領域が形成される領域に存在する結晶化誘導金属を金属層または金属シリサイド層パターンが形成された領域に対応する多結晶シリコン層内の領域にゲッタリングすることを特徴とする。
【選択図】図2B
Description
210、410、510、610、710:バッファー層
220、430、520、640、730:多結晶シリコン層
230、420、530、650、720:金属層パターンまたは金属シリサイド層パターン
540、630、740:ゲート絶縁膜
550、620、750:ゲート電極
560、760:層間絶縁膜
660:オーミックコンタクト層
571、572、671、672、771、772:ソース/ドレイン電極
575:絶縁膜
580:第1電極
585:画素定義膜
590:有機膜層
595:第2電極
Claims (36)
- 基板上に非晶質シリコン層を形成して、
前記非晶質シリコン層を結晶化誘導金属を利用して多結晶シリコン層に結晶化して、
前記多結晶シリコン層でチャネル領域が形成される以外の領域に対応する前記多結晶シリコン層の上部または下部の一定領域と接する金属層パターンまたは金属シリサイド層パターンを形成して、
前記基板を熱処理して前記多結晶シリコン層でチャネル領域が形成される領域に存在する前記結晶化誘導金属を前記金属層パターンまたは金属シリサイド層パターンが形成された領域に対応する前記多結晶シリコン層内の領域にゲッタリングすることを特徴とする多結晶シリコン層の製造方法。 - 前記金属層パターンまたは金属シリサイド層パターンは前記多結晶シリコン層内で拡散係数が前記結晶化誘導金属より小さい金属またはこれらの合金を含む金属層パターンやこれら金属のシリサイドを含む金属シリサイド層パターンであることを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンの拡散係数は前記結晶化誘導金属の拡散係数の1/100以下であることを特徴とする請求項2に記載の多結晶シリコン層の製造方法。
- 前記結晶化誘導金属はニッケルであり、前記金属層パターンまたは金属シリサイド層パターンの拡散係数は0超過ないし10−7cm2/s以下であることを特徴とする請求項3に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンはSc、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Ru、Os、Co、Rh、Ir、Pt、Y、Ta、La、Ce、Pr、Nd、Dy、Ho、TiN、及びTaNで構成される群から選択された一つまたはこれらの合金を含み、またはこれら金属のシリサイドを含むことを特徴とする請求項3に記載の多結晶シリコン層の製造方法。
- 前記熱処理は500℃ないし993℃の温度範囲で10秒ないし10時間の間加熱することを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 前記結晶化はMIC、MILCまたはSGS結晶化法を利用することを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンは前記多結晶シリコン層でチャネル領域が形成される領域から50μm以下に離隔された位置に形成することを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンは30Åないし10000Åの厚さに形成することを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンは30Åないし2000Åの厚さに形成することを特徴とする請求項9に記載の多結晶シリコン層の製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンが形成された領域に対応する前記多結晶シリコン層領域にn型不純物またはp型不純物をさらに注入し、またはイオンまたはプラズマを利用してダメージ(damage)領域を形成することをさらに含むことを特徴とする請求項1に記載の多結晶シリコン層の製造方法。
- 基板と;
前記基板上に位置し、チャネル領域及びソース/ドレイン領域を含む半導体層と;
前記チャネル領域以外の領域に対応する前記半導体層の上部または下部に位置する金属層パターンまたは金属シリサイド層パターンと;
前記半導体層のチャネル領域に対応するように位置するゲート電極と;
前記半導体層と前記ゲート電極を絶縁させるために前記ゲート電極と前記半導体層間に位置するゲート絶縁膜と;
前記半導体層のソース/ドレイン領域に電気的に連結されるソース/ドレイン電極を含むことを特徴とする薄膜トランジスタ。 - 前記金属層パターンまたは金属シリサイド層パターンは前記半導体層内で拡散係数が結晶化誘導金属より小さい金属またはこれらの合金を含む金属層パターンやこれら金属のシリサイドを含む金属シリサイド層パターンであることを特徴とする請求項12に記載の薄膜トランジスタ。
- 前記金属層パターンまたは金属シリサイド層パターンの拡散係数は前記結晶化誘導金属の拡散係数の1/100以下であることを特徴とする請求項13に記載の薄膜トランジスタ。
- 前記結晶化誘導金属はニッケルであり、前記金属層パターンまたは金属シリサイド層パターンの拡散係数は0超過ないし10−7cm2/s以下であることを特徴とする請求項14に記載の薄膜トランジスタ。
- 前記金属層パターンまたは金属シリサイド層パターンはSc、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Ru、Os、Co、Rh、Ir、Pt、Y、Ta、La、Ce、Pr、Nd、Dy、Ho、TiN、及びTaNで構成される群から選択された一つまたはこれらの合金を含み、またはこれら金属のシリサイドを含むことを特徴とする請求項13に記載の薄膜トランジスタ。
- 前記金属層パターンまたは金属シリサイド層パターンは前記半導体層のチャネル領域から50μm以下に離隔されて位置することを特徴とする請求項12に記載の薄膜トランジスタ。
- 前記金属層パターンまたは金属シリサイド層パターンの厚さは30Åないし10000Åであることを特徴とする請求項12に記載の薄膜トランジスタ。
- 前記金属層パターンまたは金属シリサイド層パターンが形成された領域に対応する前記半導体層内の領域にn型不純物またはp型不純物がさらに含まれ、またはイオンまたはプラズマ処理によるダメージ(damage)領域をさらに含むことを特徴とする請求項12に記載の薄膜トランジスタ。
- 基板を提供して、
前記基板上に非晶質シリコン層を形成して、
前記非晶質シリコン層を結晶化誘導金属を利用して多結晶シリコン層に結晶化して、
前記多結晶シリコン層でチャネル領域になる以外の領域に対応する前記多結晶シリコン層の上部または下部の一定領域と接する金属層パターンまたは金属シリサイド層パターンを形成して、
前記多結晶シリコン層のチャネル領域に対応するようにゲート電極を形成して、
前記多結晶シリコン層と前記ゲート電極を絶縁させるために前記ゲート電極と前記多結晶シリコン層間に位置するゲート絶縁膜を形成して、
前記多結晶シリコン層のソース/ドレイン領域に電気的に連結されるソース/ドレイン電極を形成することを含み、
前記金属層パターンまたは金属シリサイド層パターンを形成した後に前記基板を熱処理して前記多結晶シリコン層でチャネル領域に存在する前記結晶化誘導金属を前記金属層パターンまたは金属シリサイド層パターンが形成された領域に対応する前記多結晶シリコン層内の領域にゲッタリングすることを含むことを特徴とする薄膜トランジスタの製造方法。 - 前記基板を熱処理して前記多結晶シリコン層のチャネル領域に存在する前記結晶化誘導金属をゲッタリングした後に前記金属層パターンまたは金属シリサイド層パターンを除去することをさらに含むことを特徴とする請求項20に記載の薄膜トランジスタの製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンは前記多結晶シリコン層内で拡散係数が前記結晶化誘導金属より小さい金属またはこれらの合金を含む金属層パターンやこれら金属のシリサイドを含む金属シリサイド層パターンであることを特徴とする請求項20に記載の薄膜トランジスタの製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンの拡散係数は前記結晶化誘導金属の拡散係数の1/100以下であることを特徴とする請求項22に記載の薄膜トランジスタの製造方法。
- 前記結晶化誘導金属はニッケルであり、前記金属層パターンまたは金属シリサイド層パターンの拡散係数は0超過ないし10−7cm2/s以下であることを特徴とする請求項23に記載の薄膜トランジスタの製造方法。
- 前記金属層パターンまたは金属シリサイド層パターンはSc、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Ru、Os、Co、Rh、Ir、Pt、Y、Ta、La、Ce、Pr、Nd、Dy、Ho、TiN、及びTaNで構成される群から選択された一つまたはこれらの合金を含み、またはこれら金属のシリサイドを含むことを特徴とする請求項23に記載の薄膜トランジスタの製造方法。
- 前記熱処理は500℃ないし993℃の温度範囲で10秒ないし10時間の間加熱することを特徴とする請求項20に記載の薄膜トランジスタの製造方法。
- 前記結晶化はMIC、MILCまたはSGS結晶化法を利用することを特徴とする請求項20に記載の薄膜トランジスタの製造方法。
- 前記金属層または金属シリサイド層が形成された領域に対応する前記多結晶シリコン層領域にn型不純物またはp型不純物を注入し、またはイオンまたはプラズマを利用してダメージ領域を形成することをさらに含むことを特徴とする請求項20に記載の薄膜トランジスタの製造方法。
- 基板と;
前記基板上に位置し、チャネル領域及びソース/ドレイン領域を含む半導体層と;
前記チャネル領域以外の領域に対応する前記半導体層の上部または下部に位置する金属層パターンまたは金属シリサイド層パターンと;
前記半導体層のチャネル領域と対応するよう配置するゲート電極と;
前記半導体層と前記ゲート電極を絶縁させるために前記ゲート電極と前記半導体層間に位置するゲート絶縁膜と;
前記半導体層のソース/ドレイン領域に電気的に連結されるソース/ドレイン電極と;
前記ソース/ドレイン電極に電気的に連結される第1電極と;
前記第1電極上に位置する有機膜層と;
前記有機膜層上に位置する第2電極を含むことを特徴とする有機電界発光表示装置。 - 前記金属層パターンまたは金属シリサイド層パターンは前記半導体層内で拡散係数が結晶化誘導金属より小さい金属またはこれらの合金を含む金属層パターンやこれら金属のシリサイドを含む金属シリサイド層パターンであることを特徴とする請求項29に記載の有機電界発光表示装置。
- 前記金属層パターンまたは金属シリサイド層パターンの拡散係数は前記結晶化誘導金属の拡散係数の1/100以下であることを特徴とする請求項29に記載の有機電界発光表示装置。
- 前記結晶化誘導金属はニッケルであり、前記金属層パターンまたは金属シリサイド層パターンの拡散係数は0超過ないし10−7cm2/s以下であることを特徴とする請求項31に記載の有機電界発光表示装置。
- 前記金属層パターンまたは金属シリサイド層パターンはSc、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Ru、Os、Co、Rh、Ir、Pt、Y、Ta、La、Ce、Pr、Nd、Dy、Ho、TiN、及びTaNで構成される群から選択された一つまたはこれらの合金を含み、またはこれら金属のシリサイドを含むことを特徴とする請求項31に記載の有機電界発光表示装置。
- 前記金属層パターンまたは金属シリサイド層パターンは前記半導体層のチャネル領域から50μm以下に離隔されて位置することを特徴とする請求項29に記載の有機電界発光表示装置。
- 前記金属層パターンまたは金属シリサイド層パターンの厚さは30Åないし10000Åであることを特徴とする請求項29に記載の有機電界発光表示装置。
- 前記金属層パターンまたは金属シリサイド層パターンが形成された領域に対応する前記半導体層内の領域にn型不純物またはp型不純物がさらに含まれたり、またはイオンまたはプラズマ処理によるダメージ(damage)領域をさらに含むことを特徴とする請求項29に記載の有機電界発光表示装置。
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KR100989136B1 (ko) | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
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2007
- 2007-05-31 KR KR1020070053314A patent/KR100875432B1/ko active IP Right Grant
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- 2008-05-26 JP JP2008137033A patent/JP5090253B2/ja active Active
- 2008-05-29 EP EP08157167.1A patent/EP2009680B1/en active Active
- 2008-05-30 US US12/130,340 patent/US20080296565A1/en not_active Abandoned
- 2008-06-02 CN CN2008101087986A patent/CN101315883B/zh active Active
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Patent Citations (4)
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JP2000114527A (ja) * | 1998-08-07 | 2000-04-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2000252474A (ja) * | 1998-12-28 | 2000-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2001319878A (ja) * | 2000-05-11 | 2001-11-16 | Sharp Corp | 半導体製造方法 |
JP2003318194A (ja) * | 2002-04-24 | 2003-11-07 | Sharp Corp | 半導体装置およびその製造方法 |
Cited By (1)
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JP2008311649A (ja) * | 2007-06-13 | 2008-12-25 | Samsung Sdi Co Ltd | 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置 |
Also Published As
Publication number | Publication date |
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US20120220084A1 (en) | 2012-08-30 |
TW200905751A (en) | 2009-02-01 |
CN101315883B (zh) | 2010-12-08 |
US8790967B2 (en) | 2014-07-29 |
US20080296565A1 (en) | 2008-12-04 |
TWI381451B (zh) | 2013-01-01 |
EP2009680A1 (en) | 2008-12-31 |
KR20080105563A (ko) | 2008-12-04 |
JP5090253B2 (ja) | 2012-12-05 |
EP2009680B1 (en) | 2015-04-01 |
KR100875432B1 (ko) | 2008-12-22 |
CN101315883A (zh) | 2008-12-03 |
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