Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/4557—Heated nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45572—Cooled nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45574—Nozzles for more than one gas
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
  • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
  • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
  • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
  • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
  • H01L21/28562—Selective deposition
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
  • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
  • H01L21/76841—Barrier, adhesion or liner layers

Definitions

• the present invention relates to a film forming apparatus and a film forming method for forming a predetermined thin film on a substrate by chemical vapor deposition (CVD).
• CVD chemical vapor deposition
• a CVD film forming apparatus includes a wafer stage having a built-in heater provided in a chamber and a process gas discharge shutter provided to face the upper side of the stage. And a head.
• a processing space in the chamber is set to a predetermined degree of vacuum. While the wafer on the stage is heated to a predetermined temperature and a processing gas is continuously supplied from the shower head into the chamber, a chemical reaction occurs on the wafer surface, and the reaction product is deposited on the wafer surface. Then, film formation is performed.
• a TiN film is formed on a wafer using TiCl and NH as processing gases.
• a heater may be provided also on the shower head side.
• SFD sequential flow deposition
• a heating means is provided above the shower head and a cooling means is further provided above the heating means.
• a film forming apparatus is disclosed.
• the cooling means disclosed in the publication uses the cooling means. Since the action does not directly act on the shower head, it is performed by the upward force of the heating means, so the cooling response is poor, that is, it has not yet been possible to accurately control the temperature of the shower head surface facing the processing space. .
• An object of the present invention is to provide a film forming apparatus and a film forming method capable of accurately controlling the temperature of the surface of a shower head facing a processing space to a set temperature.
• the present invention provides a chamber for partitioning a processing space for performing a film forming process on a substrate, a stage provided in the chamber for mounting the substrate, and the stage.
• the cooling action of the cooling means acts directly on the shower head, the responsiveness of cooling is good, that is, the temperature of the shower head surface facing the processing space is also accurately controlled to the set temperature. be able to. Thereby, a film forming process with high uniformity can be performed between the substrates.
• the cooling means includes a plurality of cooling fins and a cooling gas supply path for supplying a cooling gas to the cooling fins.
• each of the plurality of cooling fins stands up in a plate shape extending in the lateral direction, and the plurality of cooling fins are arranged in parallel to each other, and
• the gas supply path has a gas outlet opening at one end of the gas passage through which the cooling gas flows from one end side to the other end side of the gap extending in the lateral direction between the plurality of cooling fins. is doing.
• the cooling unit and the shower head heating unit are housed in a housing having an exhaust port.
• the shower head includes a gas diffusion chamber communicating with the gas discharge holes, and the gas diffusion chamber includes an upper surface side portion and a lower surface side portion of the shower head. A large number of pillars are arranged for heat conduction between them.
• the film forming apparatus includes a temperature detection unit for detecting a temperature corresponding to a lower surface of the shower head, and the shower head heating unit based on a temperature detection value of the temperature detection unit. It is preferable to further comprise a control unit for controlling
• the gas supply mechanism supplies the first processing gas and the second processing gas to the processing space by dividing them into a number of cycles simultaneously or separately.
• the present invention further includes a chamber that partitions a processing space for performing a film forming process on the substrate, and a stage that is provided in the chamber and on which the substrate is placed.
• a gas supply device incorporated and used in the film forming apparatus, the shower head having a large number of gas discharge holes provided facing the stage, and the shower head provided above the shower head.
• a gas supply comprising: cooling means for cooling the shower head; and heating means for a shower head provided above the cooling means for heating the shower head via the cooling means. Device.
• the cooling action of the cooling means acts directly on the shower head, the responsiveness of cooling is improved, that is, the temperature of the shower head surface facing the processing space is also accurately controlled to the set temperature. be able to. Thereby, a film forming process with high uniformity can be performed between the substrates.
• the present invention provides a chamber that partitions a processing space for performing a film forming process on a substrate, a stage that is provided in the chamber and on which the substrate is placed, and the stage A substrate heating means for heating the substrate, a shower head having a large number of gas discharge holes provided opposite to the stage, and an interior of the chamber through the shower head.
• a gas supply mechanism for supplying a processing gas to the cooling head, a cooling means for cooling the shower head provided above the joint head, and the shower via the cooling means provided above the cooling means.
• a film forming apparatus comprising: a heating device for a head for heating a head; and a method of performing a film forming process on a substrate, a step of placing the substrate on a stage, and a step of A step of heating by the substrate heating means, a step of supplying a processing gas into the chamber via the shower head by the gas supply mechanism, and a cooling means provided above the shower head.
• the present invention is a storage medium characterized by comprising a computer-readable computer program for causing a computer to perform the film forming method having the above characteristics.
• the substrate include a semiconductor wafer, an LCD substrate, a glass substrate, and a ceramic substrate.
• FIG. 1 is a schematic cross-sectional view showing an embodiment of a film forming apparatus according to the present invention.
• FIG. 2 is an enlarged cross-sectional view showing a shower head of the film forming apparatus of FIG.
• FIG. 3 is a perspective view showing an upper surface of a spacer portion constituting the shower head of FIG. 2.
• FIG. 4 is a perspective view showing the lower surface of the spacer portion of FIG. 3.
• FIG. 5 is a perspective view showing the configuration of each member above the shower head of FIG. 2.
• FIG. 6 is a top view of a cooling member above the shower head of FIG.
• FIG. 7 is a top view for explaining a state in which cooling gas is supplied to the cooling member of FIG.
• FIG. 8 is a cross-sectional view showing a heater above the shower head in FIG.
• FIG. 9 is a perspective view showing the configuration of each member on the upper surface side of the film forming apparatus of FIG. 1.
• FIG. 10 is a flowchart showing one embodiment of a film forming method on a wafer.
• FIG. 11 is an explanatory diagram showing ON / OFF of supply of each processing gas during the film forming process of FIG.
• FIG. 12 is a schematic sectional view showing a conventional film forming apparatus used as a comparative example.
• FIG. 13 is a perspective view showing an upper surface of a spacer portion constituting the shower head of the film forming apparatus of FIG.
• FIG. 14A shows a film forming process using an embodiment of a film forming apparatus according to the present invention and a film forming using a conventional film forming apparatus when the shower head is not precoated. It is a graph which shows the temperature of the shower head at the time of a process.
• FIG. 14B shows a film forming process using an embodiment of a film forming apparatus according to the present invention and a film forming using a conventional film forming apparatus when a shower head is precoated. It is a graph which shows the temperature of the shower head at the time of a process.
• FIG. 15A shows the temperature of the shower head of one embodiment of the film forming apparatus according to the present invention.
• FIG. 4 is a graph showing the temperature of a shower head of a conventional film forming apparatus.
• FIG. 15B is a graph showing the output of the heater of one embodiment of the film forming apparatus according to the present invention and the output of the heater of the conventional film forming apparatus.
• FIG. 1 is a schematic sectional view showing a film forming apparatus according to an embodiment of the present invention.
• the film forming apparatus 1 of the present embodiment is an apparatus that forms a TiN thin film on a wafer W as a substrate by SFD.
• the film forming apparatus 1 has a substantially cylindrical chamber 2 that is airtight.
• a cylindrical stage holding member 21 (having a smaller diameter than the chamber 1) protruding downward is attached to the center of the bottom of the chamber 2 via a seal ring.
• the processing space S is defined (enclosed) by the chamber 1-2.
• the chamber 12 and the stage holding member 21 have heating mechanisms (not shown), and these heating mechanisms are supplied with power from a power supply (not shown) and heated to a predetermined temperature! / Speak.
• a loading / unloading port 22 for loading / unloading the wafer W is provided on the side wall of the chamber 12.
• the loading / unloading port 22 is opened and closed by a gate valve 23.
• An exhaust pipe 24 is connected to the side wall of the stage holding member 21.
• An exhaust means 25 is connected to the exhaust pipe 24.
• the exhaust means 25 operates in response to a control signal from a control unit 100 described later. As a result, the pressure inside the chamber 12 is reduced to a predetermined vacuum level.
• a stage 3 which is a mounting table for horizontally mounting the wafer W, which is a substrate, is provided.
• the stage 3 is supported by a cylindrical support member 31.
• the lower end of the support member 31 is attached to the stage holding member 21 via a seal ring (not shown).
• a wafer heater 32 is embedded in the stage 3.
• the wafer heater 32 heats the wafer W to a predetermined temperature by being fed by a power source (not shown).
• the stage 3 is provided with three (only two shown) wafer support pins 33 for supporting the wafer W and raising and lowering so as to protrude and retract with respect to the surface of the stage 3.
• These wafer support pins 33 are fixed to the support plate 34 and include, for example, a motor. As the support plate 34 is moved up and down by the drive mechanism 35, it is moved up and down.
• FIG. 2 is a longitudinal sectional view of the shower head 4.
• the configuration of the shower head 4 will be described with reference to FIG.
• the shower head 4 includes a base part 41, a spacer part 51, and a shower plate 42.
• a spacer 51 is provided on the lower surface of the center of the base 41, and a shower plate 42 is provided on the lower surface of the spacer 51.
• 40 is a screw for fixing the spacer part 51 and the shower plate 42 to the base part 41, and 40a in the figure is a screw hole.
• the base portion 41 is formed in a flat circular shape.
• a flange is provided outside the lower end. This flange portion is supported by the support member 2a.
• a first gas channel 41a and a second gas channel 41b that are partitioned from each other are formed in the base portion 41, respectively.
• a sensor 4A that is a detection unit that detects the temperature of the upper side portion of the base portion 41 is provided above the flange portion of the base portion 41.
• the temperature detection sensor 4A transmits an electrical signal corresponding to the detected temperature to the control unit 100 described later.
• the base 41 is connected to the shower plate 42 via the spacer 51! Therefore, the temperature detected by the temperature detection sensor 4A faces the processing space S in the shower head 4. The value corresponds to the surface temperature.
• FIG. 3 is a perspective view showing an upper surface of a spacer portion constituting the shower head of FIG.
• FIG. 4 is a perspective view showing a lower surface of the spacer portion of FIG.
• the spacer portion 51 includes a disc portion 52 and projecting edge portions 53 and 54 projecting up and down at the periphery of the disc portion 52, respectively.
• the upper surface of the projecting edge portion 53 is in close contact with the base portion 41.
• the lower surface of the projecting edge 54 is in close contact with the shower plate 42.
• a space surrounded by the projecting edge portion 53, the disc portion 52, and the base portion 41 is configured as a first gas diffusion chamber 52a.
• a space surrounded by the protruding portion 54, the disc portion 52, and the shower plate 42 is configured as a second gas diffusion chamber 52b.
• the first gas diffusion chamber 52a communicates with the first gas flow path 41a of the base portion 41. Also, Force not shown in FIGS. 3 and 4 As shown in FIG. 2, the second gas supply passage 41b of the base portion 41 is provided via an intermediate passage 50 provided in the thickness direction of the disc portion 52. And the second gas diffusion chamber 52b communicate with each other.
• bosses 55 which are a large number of column portions extending upward at intervals, are provided in an island shape.
• the upper surface (front end surface) of each boss 55 is in contact with the lower surface of the base portion 41.
• each boss 55 efficiently transmits the cold air (cold heat) of the base portion 41 to the spacer portion 51. Thereby, the temperature force on the surface of the spacer 51 and the surface of the shower plate 42 connected to the spacer 51 are controlled with high accuracy.
• the spacer portion 51 has a diameter of 340 mm. Further, the total area of the spacer portion 51 in contact with the base portion 41 is about 385 cm 2 . This total area is about 42% of the area of the projection area of the spacer 51 on the base 41.
• the lower surface of the disc part 52 is spaced from each other over the entire lower surface!
• a number of protrusions (bosses) 56 extending downward are provided!
• the tip surfaces of these bosses 56 are in contact with the upper surface of the shower plate 42.
• a gas introduction hole 57a is formed so as to penetrate each boss 56 and the disc portion 52 in the thickness direction.
• the gas introduction hole 57a communicates with the first gas diffusion chamber 52a.
• FIG. 3 for convenience of illustration, only a few gas introduction holes 57a are drawn. However, in reality, a large number are provided so as to correspond to the bosses 56 in FIG. 3 and 4 are only schematic views of the upper and lower surfaces of the disk portion.
• the sizes of the bosses 55 and 56, the distance between the bosses, and the number of bosses 55 and 56 are as follows. These can be changed as appropriate.
• the shower plate 42 is a member formed in a disk shape, and a large number of gas discharge holes are formed in the thickness direction.
• the gas discharge holes are arranged in a matrix shape, for example, over the entire shower plate 42. These gas discharge holes are constituted by a first gas discharge hole 42a communicating with the first gas diffusion chamber 52a and a second gas discharge hole 42b communicating with the second gas diffusion chamber 52b. .
• the first and second gas discharge holes 42a and 42b are alternately arranged.
• the gas supplied to the first gas flow path 41a is discharged from the gas discharge hole 42a into the processing space S in a shower shape via the first gas diffusion chamber 52a and the gas introduction hole 57a, and the stage Supplied to Ueno, W on 3 above.
• the gas supplied to the second gas flow path 41b is discharged from the gas discharge hole 42b into the processing space S in a shower shape via the intermediate path 50 and the second gas diffusion chamber 52b. It is supplied to the upper wafer W. That is, the gas supplied to the first gas passage 41a and the gas supplied to the second gas passage 41b are not mixed with each other in the shower head 4.
• FIG. 5 is a perspective view showing a configuration above the shower head 4.
• a cooling member 6 made of, for example, aluminum is provided on the base portion 41.
• FIG. 6 is a top view of the cooling member 6.
• the cooling member 6 includes a disk-shaped base portion 61 and a large number of cooling fins 62 standing on the upper surface of the base portion 61.
• Each of the cooling fins 62 is formed in a plate shape extending in the lateral direction, and the cooling fins 62 are arranged in parallel to each other.
• the center of the base 61 is a connection region for a gas supply block 81 described later.
• a square hole 61 a is provided in the thickness direction of the base portion 61.
• a gas supply block 81 described later is connected to the shower head 4 through the hole 61a.
• a cooling gas introduction pipe 63 is disposed on the base 61 so that one end force of the base 61 is directed toward the center thereof.
• the cooling gas introduction pipe 63 is connected to the central portion of the cooling gas discharge pipe 64 that extends on the base 61 along its diameter.
• a side pipe 65 is provided on the base 61 so as to surround the connection region of the gas supply block 81. Both ends of the side pipe 65 are connected to the cooling gas discharge pipe 64.
• the cooling gas discharge pipe 64 and the side pipe 65 are provided with gas outlets (cooling gas discharge holes) for discharging gas along the extending direction of the cooling fin 62 into the horizontally long gap between the cooling fins 62.
• Forces are provided at intervals.
• the cooling gas introduction pipe 63 has a cooling gas.
• a cooling gas supply source 67 in which dry air is stored is connected.
• VI is a noble, which controls the supply and disconnection of the cooling gas from the cooling gas supply source 67 to the cooling gas introduction pipe 63 in response to the electrical signal of the control unit 100.
• the cooling gas at a predetermined flow rate is cooled from the cooling gas supply source 67 through the cooling gas introduction pipe 63. It flows into the gas discharge pipe 64 and the side pipe 65 and is discharged from the cooling gas discharge hole 66. The discharged cooling gas travels along the cooling fins 62 toward the peripheral edge of the cooling member 6 as indicated by arrows in the figure. At this time, the surface force of the cooling fins 62 and the base 61 is cooled by being exposed to a stream of cooling gas. When the cooling member 6 is cooled in this way, the adjacent shower head 4 is cooled.
• cooling member 6 the cooling gas introduction pipe 63, the cooling gas discharge pipe 64, the side pipe 65, and the cooling gas supply source 67 constitute the cooling means referred to in the claims.
• the cooling gas introduction pipe 63, the cooling gas discharge pipe 64, and the side pipe 65 constitute a cooling gas supply path.
• a disc-shaped shower head heater 71 serving as a heating means for the shower head is provided on the upper portion of the cooling fin 62 via a plate-like member 70 made of aluminum force. Is provided.
• the heater 71 can heat the shower head 4 via the plate-like member 70 and the cooling member 6.
• the shower head heater 71 has, for example, a configuration in which a heating resistor 72 is sandwiched between rubber sheets 73 that are insulating materials in the vertical direction.
• reference numeral 74 denotes a plate-like member that also becomes, for example, Alminiumka.
• As the shower head heater 71 a heater in which a heating resistor is embedded in a metal plate may be used. However, it is preferable to employ the above-described configuration for the viewpoint of reducing the weight of the apparatus.
• the control unit 100 that has received the electric signal of the temperature detection sensor 4A of the shower head 4 also applies the shower head heater 71 so that the detection value of the temperature detection sensor 4A becomes, for example, a preset temperature. An electric signal is transmitted to adjust the output of the heater 71.
• the shower head heater 71 heats the shower head 4 through the cooling member 6 under the control of the control unit 100 as described above.
• TiN film formation on the surface of the shower head 4 facing the processing space S can be suppressed by the heat generated from the shower head heater 71 and the cold air (cold heat) of the cooling member 6 described above.
• temperature control can be performed such that a good film forming process is performed on the wafer W.
• the surface temperature is preferably controlled to 185 ° C. or lower.
• a gas supply block 81 is provided at the upper center of the base portion 41. As shown in FIG. 1, the gas supply block 81 is provided with a first gas supply pipe 81a and a second gas supply pipe 81b.
• One end of the first gas supply pipe 81a is connected to the first gas flow path 41a. Then, the other end force of the first gas supply pipe 81a is branched, and NH gas as the first processing gas is stored.
• Gas supply source 82 and a gas supply source 83 storing N (nitrogen) gas as a carrier gas.
• One end force of the second gas supply pipe 8 lb is connected to the second gas flow path 4 lb. Then, the other end of the second gas supply pipe 8 lb branches and TiCl gas, which is the second processing gas, is branched.
• Each gas supply pipe 81a, 81b is provided with a gas supply device group 87 constituted by valves, a mass flow controller, and the like.
• the gas supply device group 87 receives a control signal from the control unit 100 to be described later, and controls supply / disconnection of each processing gas!
• the gas supply sources 82 to 86, the gas supply pipes 8la and 81b, and the gas supply device group 87 correspond to the gas supply mechanism in the claims.
• FIG. 9 is a perspective view showing the upper surface of the film forming apparatus 1.
• a cover 27 is provided on the chamber 2 via a plate member 2b.
• the cover 27 is a housing that houses the cooling member 6 and the shower head heater 71.
• reference numeral 27a denotes an exhaust space surrounded by the cover 27.
• An exhaust port 28a that opens to the exhaust space 27a is provided in the upper portion of the cover 27.
• One end of an exhaust pipe 29 is connected to the exhaust port 28a.
• the other end of the exhaust pipe 29 is connected to the exhaust means 29a.
• the film forming apparatus 1 of the present embodiment is provided with a control unit 100 having, for example, computer power.
• the control unit 100 includes a program, a memory, a data processing unit having CPU power, and the like.
• the control unit 100 sends a control signal to each part of the film forming apparatus 1 and executes a function described later so that a TiN film can be formed on the wafer W. It is rare.
• the memory is provided with an area in which process parameter values (recipe) such as process pressure, process time, gas flow rate, and power value are written.
• process parameter values such as process pressure, process time, gas flow rate, and power value are written.
• This program (including a program related to the process parameter input screen) is stored in the storage unit 101, which is a storage medium composed of, for example, a flexible disk, a compact disk, or an MO (magneto-optical disk). Installed in the control unit 100 as appropriate.
• N gas which is an inert gas, flows into the chamber at a predetermined flow rate.
• the stage 3 is heated to a predetermined temperature, for example, about 600 ° C. to 700 ° C. by the wafer heater 32.
• the heater (not shown) of the chamber 12 is also heated, and the inside of the chamber 12 is maintained at a predetermined temperature.
• the cooling gas is supplied from the cooling gas supply source 67 to the cooling gas discharge pipe 64 at a flow rate of 150 LZmin, for example.
• the cooling gas is discharged from the cooling gas discharge hole 66, and the cooling member 6 is cooled (step Sl).
• the exhaust means 29a is operated substantially simultaneously with the supply of the cooling gas, and the exhaust space 27a is exhausted.
• the temperature of the gas shower head heater 71 rises, and the shower head 4 is heated via the cooling member 6.
• the temperature of the shower head 4 is maintained so that the temperature detected by the temperature detection sensor 4A is maintained at a predetermined value, for example, 165 ° C.
• the temperature is controlled (step S2).
• step S3 the gate valve 23 is opened, and the wafer W is loaded into the chamber 12 by a transfer arm (not shown).
• a transfer arm not shown
• weno and W are placed on the upper surface of the stage 3, and the gate valve 23 is closed (step S3).
• the wafer W placed on the stage 3 is heated to a predetermined temperature (step S4).
• FIG. 11 is a graph showing gas supply and pressure control and pressure control in the process of forming a TiN film on the wafer W in time series.
• the temperature in the chamber 12 is maintained at a predetermined temperature, and the pressure in the chamber 12 is maintained at 260 Pa, for example, FIG.
• supply of both processing gases is turned on at time tl. From time tl to t2, for example, with TiCl gas
• N 2 gas may be supplied as the purge gas. After that, the supply of TiCl gas is stopped.
• NH gas is supplied at a predetermined flow rate for a predetermined time (for details, in addition to NH gas)
• N 3 gas is also supplied as the carrier gas). As a result, a film is formed on the wafer W.
• N 2 gas may be supplied.
• step group force as that performed from time tl to time t3 is repeated.
• step group from time tl to t3 is repeated for 10 cycles or more, preferably 30 cycles or more until a desired TiN film is obtained.
• About the number of cycles Is appropriately adjusted depending on the thickness of the thin film formed in one cycle.
• the nitriding process is performed. In this way, the film forming process is repeatedly performed in the same process on a predetermined number of wafers w.
• C1F gas is supplied into the chamber 12 and cleaning is performed.
• the cooling member 6 cooled by the cooling gas is provided above the shower head 4, and the shower head heater 71 is further provided thereon.
• the temperature of the shower head 4 becomes too high due to heat radiated from the processing space S side by the wafer heater 32 and heat radiated from the heating means (not shown) of the chamber t. It is suppressed by the cooling action of the cooling member 6 provided immediately above the shower head 4. Since the degree of cooling action can be adjusted by supplementarily using the shower head heater 71 above the cooling means 6, the temperature of the shower head surface facing the processing space S can be accurately set to the set temperature. You can control. Therefore, a highly uniform TiN film can be formed between the wafers W.
• bosses 55 are provided on the upper surface of the spacer portion 51 constituting the first diffusion chamber 52a of the processing gas, and the second diffusion chamber of the processing gas is constituted.
• bosses 56 are also provided on the lower surface of the spacer section 51. The boss 55 is in contact with the base portion 41, and the boss 56 is in contact with the shower plate 42. Thereby, heat conduction is efficiently performed between the base portion 41 and the spacer portion 51 or between the spacer portion 51 and the shower plate 42. This also makes it possible to control the temperature of the surface of the spacer section 51 and the shower plate 42 to the set temperature with higher accuracy.
• cooling means instead of providing the cooling member 6 and the gas discharge pipe 64 and the like as in the above-described film forming apparatus, for example, a block provided with a ventilation chamber is used as the shower head 4 and the heater 71. It is possible to adopt a configuration in which the cooling gas is circulated through the ventilation chamber. Yes.
• a cooling member constituted by a Peltier element may be used as the cooling means.
• a plate provided on the surface with a flow path through which the coolant flows may be provided on the shower head 4 as a cooling means.
• the configuration in which the cooling means using the cooling gas is provided as in the above-described embodiment does not require the piping for the coolant flow, and the layout of the components constituting the film forming apparatus 1 This is preferable because the degree of freedom can be increased and the size of the apparatus can be prevented from being increased.
• each cooling fin 62 is provided upright, and the cooling gas flows through the gaps between the fins 62. Therefore, the cooling member 6 exposed to the cooling gas While the surface area can be increased, the floor area of the cooling member 6 can be reduced. Therefore, the enlargement of the apparatus can be effectively suppressed.
• a cycle of introducing the processing gas into the chamber 12 in a pulsed manner is repeatedly performed, and the films are stacked in stages, but the processing gas is continuously supplied.
• a C VD film forming process may be performed.
• TiCl gas and NH gas can be used in the chamber at the same time.
• the atmosphere of the processing space S is alternately switched many times between an atmosphere of TiCl gas and an atmosphere of NH gas.
• Ti atom layer (or molecular layer) formation and nitridation on wafer w are performed alternately.
• a TiN film may be formed.
• a high frequency is applied to the shower head 4 to generate plasma in the chamber 12, and film formation is performed on the wafer W using the energy of the plasma and the thermal energy of the wafer heater 32.
• the force described with reference to the TiN film forming process is not limited to this, and the film forming apparatus 1 is applied to the CVD film forming process for other films such as a Ti film. You can also.
• the shower head 4 of the above-described film forming apparatus 1, the cooling member 6 thereabove, each pipe for supplying the cooling gas to the cooling member 6, the heater 71, and a powerful gas supply device are provided. It may be considered as an invention.
• the film forming apparatus of the present invention including the film forming apparatus 1 or the gas supply apparatus is SF
• the temperature of the shower head 4 is affected by the heat from the processing space such as the stage heater. This is particularly effective when performing processing that becomes higher than the temperature to be controlled.
• the film forming apparatus 9 is configured in substantially the same manner as the film forming apparatus 1 except for the differences described below.
• the same reference numerals as those used for the film forming apparatus 1 are used for the respective parts having the same configuration as the film forming apparatus 1.
• the force of the control unit provided in the film forming apparatus 9 is not shown.
• the control unit of the film forming apparatus 9 is also configured to form a TiN film on the wafer W in the same manner as the control unit 100. It comes to control each part of 9.
• the cooling member 6 and the cover 27 are not provided above the shower head 4. Instead, a heater 91 is stacked on the shower head 4. A heat insulating material 92 is laminated on the heater 91.
• FIG. 13 is a perspective view showing an upper surface of the spacer section 93 constituting the shower head of the film forming apparatus 9 of FIG. As shown in FIG. 13, no boss is provided on the upper surface of the disc portion 152 of the spacer portion 93. Instead, two ribs 94 orthogonal to each other are provided along the diameter direction of the disc portion 152. The upper surface force of the rib 94 is in close contact with the lower surface of the base portion 41.
• the diameter of the spacer section 93 is 340 mm which is the same as the diameter of the spacer section 51 of the film forming apparatus 1.
• the total area of the force spacer section 93 in contact with the base section 41 is 276 cm 2 . This corresponds to about 30% of the area of the projection area of the spacer section 93 to the base section 41, which is smaller than the area where the spacer section 51 contacts the base section 41.
• a TiN film was formed on the wafer W according to the procedure described above as an embodiment of the present invention.
• the heater 71 temperature is set to 165 ° C. Therefore, the flow rate of the cooling gas supplied from the cooling gas supply source 67 to the cooling member 6 was set to 150 LZmin.
• a temperature detection sensor (TC) made of a thermocouple is temporarily attached to the surface of the shower head 4 (on the surface in contact with the processing space S), and the temperature of the heater 3 for the stage 3 is changed while changing the temperature. The temperature of the shower head 4 detected by the detection sensor (TC) was examined.
• a TiN film was formed on the wafer W using the film forming apparatus 9.
• the temperature of the shower head 104 detected by the temperature detection sensor (TC) attached to the surface of the shower head 104 was examined while changing the set temperature of the wafer heater 32 at stage 3. .
• the set temperature of the heater 91 on the shower head 104 was set to 170 ° C.
• FIG. 14A is a graph showing the results of Example 1-1 and Comparative example 1-1.
• the temperature detected by is increasing rapidly. Therefore, from this graph, the surface temperature of the shower head 4 facing the processing space S in Example 1-1 can be suppressed compared to the surface temperature of the shower head 104 in Comparative Example 11! / Little.
• the slope of the graph of Example 1-1 is smaller than the slope of the graph of Comparative Example 1-1.
• Example 1-1 the temperature rise of the shower head is suppressed compared to Comparative Example 1-1.
• a TiN film was previously formed (precoated) on the surface of the shower head 4 facing the processing space S.
• a TiN film was formed on the wafer W according to the procedure described above as the embodiment of the present invention.
• Various conditions for the film formation process are the same as in Example 1-1, and a temperature detection sensor (TC) that also has a thermocouple force is temporarily attached to the surface of the shower head 4 (on the surface in contact with the processing space S). The temperature of the shower head 4 detected by the temperature detection sensor (TC) was examined while changing the temperature of the stage 3 wafer heater 32.
• a TiN film was previously formed (precoated) on the surface of the shower head 104 facing the processing space S.
• a TiN film was formed on wafer W using such a film forming apparatus 9.
• the various conditions of the film formation process are the same as in Comparative Example 11 and the temperature detection sensor (TC) attached to the surface of the shuttle head 104 while changing the set temperature of the wafer heater 32 of the stage 3 The temperature of the shower head 104 detected by is investigated.
• FIG. 14B is a graph showing the results of Example 1-2 and Comparative Example 1-2. As shown in the drawing of FIG. 14B, the temperature of the shower head 4 detected by the temperature detection sensor TC is higher in Comparative Example 12 than in Example 12. Therefore, it can be seen from this dull that the surface temperature of the shower head 4 in Example 1-2 is suppressed compared to the surface temperature of the shower head 104 in Comparative Example 1-2.
• Example 2 TiN films were sequentially formed on 500 wafers W according to the procedure described above as the embodiment of the present invention by using the film forming apparatus 1 described above. During these film forming processes, the temperature change of the shower head 4 indicated by the temperature detection sensor 4A and the output of the heater 71 on the shower head 4 were monitored. Note that the program of the control unit 100 was set so that the temperature of the heater 71 was adjusted so that the temperature of the sensor 4A was maintained at 165 ° C. during the film forming process.
• Comparative Example 2 TiN films were sequentially formed on 500 wafers W according to the procedure described above as the embodiment of the present invention using the film forming apparatus 9 described above.
• the temperature change of the shower head 104 indicated by the temperature detection sensor (provided in the same manner as the temperature detection sensor 4A) and the output of the heater 92 on the shower head 104 are displayed. And was monitored.
• the program of the control unit of the film forming apparatus 9 was set so that the temperature of the heater 92 was adjusted so that the temperature of the temperature detection sensor was maintained at 170 ° C. during the film forming process.
• FIG. 15A shows the monitored temperatures of Example 2 and Comparative Example 2.
• Example 2 the temperature changes as set at 165 ° C.
• Comparative Example 2 immediately after the start of processing, the temperature exceeds the set temperature of 170 ° C., and the temperature further increases as time passes.
• FIG. 15B shows the output of the heater 71 of Example 2 and the output of the heater 92 of Comparative Example 2.
• the time shown on the horizontal axis of the graph of FIG. 15B corresponds to the time shown on the horizontal axis of the graph of FIG. 15A.
• the output of the heater 71 of Example 2 rises to about 90% immediately after the start of processing, then falls to about 50%, and is stable around the 50%.
• Comparative Example 2 the output decreases immediately after the start, and is substantially 0%.
• Example 2 the temperature of the shower head 4 can be stably controlled by the cooling member 6 and the heater 71. For this reason, the temperature of the surface facing the processing space S of the shower head 4 is suitably controlled, and the formation of a TiN film on the surface can be suppressed.
• Comparative Example 2 the temperature of the shower head 104 continues to rise even when the output of the heater 71 is zero. That is, it can be seen that the temperature force of the shower head 104 is not sufficiently controlled.

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