TWI509803B - 半導體裝置和其製造方法 - Google Patents

半導體裝置和其製造方法 Download PDF

Info

Publication number
TWI509803B
TWI509803B TW099134424A TW99134424A TWI509803B TW I509803 B TWI509803 B TW I509803B TW 099134424 A TW099134424 A TW 099134424A TW 99134424 A TW99134424 A TW 99134424A TW I509803 B TWI509803 B TW I509803B
Authority
TW
Taiwan
Prior art keywords
layer
insulating layer
oxide semiconductor
electrode layer
semiconductor device
Prior art date
Application number
TW099134424A
Other languages
English (en)
Chinese (zh)
Other versions
TW201123452A (en
Inventor
山崎舜平
小山潤
三宅博之
高橋圭
豐高耕平
津吹將志
野田耕生
桑原秀明
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201123452A publication Critical patent/TW201123452A/zh
Application granted granted Critical
Publication of TWI509803B publication Critical patent/TWI509803B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/07758—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Shift Register Type Memory (AREA)
TW099134424A 2009-10-16 2010-10-08 半導體裝置和其製造方法 TWI509803B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009238885 2009-10-16

Publications (2)

Publication Number Publication Date
TW201123452A TW201123452A (en) 2011-07-01
TWI509803B true TWI509803B (zh) 2015-11-21

Family

ID=43876099

Family Applications (8)

Application Number Title Priority Date Filing Date
TW099134424A TWI509803B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW112138389A TWI897057B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW111104286A TWI821895B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW107131523A TWI733054B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW109118669A TWI755747B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW106103969A TWI664680B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW104129178A TWI583001B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW108113080A TWI697055B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法

Family Applications After (7)

Application Number Title Priority Date Filing Date
TW112138389A TWI897057B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW111104286A TWI821895B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW107131523A TWI733054B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW109118669A TWI755747B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW106103969A TWI664680B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW104129178A TWI583001B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法
TW108113080A TWI697055B (zh) 2009-10-16 2010-10-08 半導體裝置和其製造方法

Country Status (5)

Country Link
US (7) US8421068B2 (enExample)
JP (13) JP2011103458A (enExample)
KR (2) KR101772639B1 (enExample)
TW (8) TWI509803B (enExample)
WO (1) WO2011046048A1 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20120051727A (ko) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN01823A (enExample) 2009-10-16 2015-06-05 Semiconductor Energy Lab
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
KR20170091760A (ko) 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102135817B1 (ko) * 2009-12-18 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
WO2011074393A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8766252B2 (en) 2010-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
JP5824266B2 (ja) 2010-07-29 2015-11-25 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8729545B2 (en) * 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8610482B2 (en) * 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
US8891285B2 (en) * 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8804405B2 (en) * 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP6116149B2 (ja) * 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
JP2013115111A (ja) * 2011-11-25 2013-06-10 Hitachi Ltd 酸化物半導体装置およびその製造方法
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9219164B2 (en) * 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
CN202549848U (zh) * 2012-04-28 2012-11-21 京东方科技集团股份有限公司 显示装置、阵列基板和薄膜晶体管
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8975918B2 (en) * 2012-05-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Lookup table and programmable logic device including lookup table
CN104321967B (zh) 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
TWI611566B (zh) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611582B (zh) * 2013-04-10 2018-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8994430B2 (en) 2013-05-17 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6368155B2 (ja) * 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9455349B2 (en) * 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
KR102220450B1 (ko) * 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6615490B2 (ja) * 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
JP6857447B2 (ja) * 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 半導体装置
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JPWO2016139828A1 (ja) * 2015-03-03 2017-04-27 株式会社東芝 半導体装置
JP6705663B2 (ja) 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI695415B (zh) 2015-03-30 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2016203354A1 (en) * 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
JP2017017208A (ja) * 2015-07-02 2017-01-19 株式会社ジャパンディスプレイ 半導体装置
WO2017006207A1 (en) 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI667570B (zh) * 2015-07-15 2019-08-01 聯華電子股份有限公司 半導體裝置及其運作方法
US11189736B2 (en) * 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
DE112016005330T5 (de) 2015-11-20 2018-08-23 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung oder Anzeigevorrichtung, die die Halbleitervorrichtung beinhaltet
CN108475491B (zh) 2015-12-18 2021-04-20 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor
US11512633B2 (en) 2017-04-11 2022-11-29 Borgwarner Inc. Turbocharger, vibration detection assembly, and method of using same
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN110678974B (zh) 2017-06-02 2023-11-28 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
US10665604B2 (en) 2017-07-21 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, memory device, and electronic device
FR3079616B1 (fr) * 2018-03-30 2021-02-12 Soitec Silicon On Insulator Micro-capteur pour detecter des especes chimiques et procede de fabrication associe
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
JP7597581B2 (ja) * 2018-12-27 2024-12-10 株式会社半導体エネルギー研究所 半導体装置
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN111244115B (zh) * 2020-03-09 2022-12-02 合肥鑫晟光电科技有限公司 一种显示用基板及其制备方法、显示装置
EP4134940B1 (en) 2020-04-10 2024-09-11 BOE Technology Group Co., Ltd. Display substrate
CN112234091B (zh) * 2020-10-23 2025-03-18 厦门天马微电子有限公司 显示面板和显示装置
TWI813217B (zh) * 2021-12-09 2023-08-21 友達光電股份有限公司 半導體裝置及其製造方法
CN115101542B (zh) * 2021-12-09 2025-03-28 友达光电股份有限公司 半导体装置及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63221677A (ja) * 1987-03-10 1988-09-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP2002111008A (ja) * 2000-10-04 2002-04-12 Canon Inc 薄膜トランジスタアレー
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
JP2009004733A (ja) * 2007-05-18 2009-01-08 Canon Inc インバータの作製方法及びインバータ
WO2009081885A1 (ja) * 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. 酸化物半導体電界効果型トランジスタ及びその製造方法
TW200931503A (en) * 2007-10-10 2009-07-16 Semiconductor Energy Lab Method of manufacturing semiconductor device
JP2009176865A (ja) * 2008-01-23 2009-08-06 Canon Inc 薄膜トランジスタ及びその製造方法

Family Cites Families (177)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620136B2 (ja) 1984-02-23 1994-03-16 日本電気株式会社 薄膜トランジスタ素子およびその製造方法
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JP2759154B2 (ja) * 1989-01-26 1998-05-28 カシオ計算機株式会社 薄膜メモリ素子
US5079606A (en) 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JPH03171775A (ja) 1989-11-30 1991-07-25 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH10319869A (ja) 1997-05-16 1998-12-04 Matsushita Electric Ind Co Ltd 液晶画像表示装置と画像表示装置用半導体装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2002083974A (ja) 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP4974427B2 (ja) * 2000-09-29 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子装置
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US6394021B1 (en) * 2000-12-13 2002-05-28 Sram Corporation Floating bicycle gear indicator
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2003243657A (ja) 2002-02-12 2003-08-29 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法、電気光学装置の製造方法
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4984369B2 (ja) 2002-12-10 2012-07-25 株式会社ジャパンディスプレイイースト 画像表示装置及びその製造方法
JP4118706B2 (ja) 2003-02-25 2008-07-16 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
US7541614B2 (en) * 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP3781740B2 (ja) 2003-07-07 2006-05-31 沖電気工業株式会社 半導体集積回路、半導体装置および半導体装置の製造方法
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
JP4628004B2 (ja) 2004-03-26 2011-02-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
GB0409439D0 (en) * 2004-04-28 2004-06-02 Koninkl Philips Electronics Nv Thin film transistor
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006013028A (ja) * 2004-06-24 2006-01-12 National Institute Of Advanced Industrial & Technology 化合物太陽電池及びその製造方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
JP4450719B2 (ja) 2004-10-22 2010-04-14 株式会社神戸製鋼所 半導体素子の製造方法
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5126730B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 電界効果型トランジスタの製造方法
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
KR100614657B1 (ko) * 2005-04-04 2006-08-22 삼성전자주식회사 플래쉬 기억 장치 및 그 형성 방법
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US7732330B2 (en) 2005-06-30 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using an ink-jet method of the same
JP2007043113A (ja) 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置、半導体装置の作製方法
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
TWI424408B (zh) * 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4981282B2 (ja) 2005-09-06 2012-07-18 キヤノン株式会社 薄膜トランジスタの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP4907942B2 (ja) 2005-09-29 2012-04-04 シャープ株式会社 トランジスタおよび電子デバイス
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) * 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2007058248A1 (ja) 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
KR20070081829A (ko) 2006-02-14 2007-08-20 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
TW200736786A (en) * 2006-03-31 2007-10-01 Prime View Int Co Ltd Thin film transistor array substrate and electronic ink display device
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
KR100801961B1 (ko) 2006-05-26 2008-02-12 한국전자통신연구원 듀얼 게이트 유기트랜지스터를 이용한 인버터
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5128792B2 (ja) 2006-08-31 2013-01-23 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5116277B2 (ja) * 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
KR100790761B1 (ko) 2006-09-29 2008-01-03 한국전자통신연구원 인버터
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
JP5365007B2 (ja) 2007-01-25 2013-12-11 凸版印刷株式会社 薄膜トランジスタアレイおよびその製造方法
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101312259B1 (ko) * 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
WO2008099528A1 (ja) * 2007-02-13 2008-08-21 Sharp Kabushiki Kaisha 表示装置、表示装置の製造方法
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5182603B2 (ja) 2007-03-27 2013-04-17 セイコーエプソン株式会社 有機トランジスタ及び有機トランジスタの製造方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
JP2008270313A (ja) 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 半導体記憶素子
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR101404439B1 (ko) 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
KR20090002841A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
JP2009017686A (ja) * 2007-07-05 2009-01-22 Yamaguchi Univ 太陽電池によるリチウムイオン電池充電装置
JP2009117717A (ja) * 2007-11-08 2009-05-28 Sharp Corp 半導体装置及びその製造方法
US7768008B2 (en) 2007-11-13 2010-08-03 Toppan Printing Co., Ltd. Thin film transistor, method for manufacturing the same and display using the same
WO2009070793A1 (en) 2007-11-29 2009-06-04 Pluromed, Inc. Endoscopic mucosal resectioning using purified inverse thermosensitive polymers
JP5213422B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
JP2009206508A (ja) 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
US8586979B2 (en) * 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
JP2009224595A (ja) * 2008-03-17 2009-10-01 Fujifilm Corp 有機電界発光表示装置及びその製造方法
KR101490112B1 (ko) * 2008-03-28 2015-02-05 삼성전자주식회사 인버터 및 그를 포함하는 논리회로
KR101458897B1 (ko) * 2008-05-02 2014-11-10 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101404551B1 (ko) * 2008-05-09 2014-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR101659925B1 (ko) 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101540341B1 (ko) * 2008-10-17 2015-07-30 삼성전자주식회사 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
JP2009135520A (ja) * 2009-02-23 2009-06-18 Panasonic Electric Works Co Ltd 有機半導体回路基板
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
JP5240059B2 (ja) 2009-05-14 2013-07-17 トヨタ自動車株式会社 排気還流装置の異常検出装置
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6108103B2 (ja) 2013-06-06 2017-04-05 トヨタ自動車株式会社 巻線装置及び巻線方法
JP6557891B2 (ja) 2017-07-06 2019-08-14 株式会社コナミデジタルエンタテインメント ゲーム管理装置及びプログラム
JP7101049B2 (ja) 2018-06-06 2022-07-14 朋和産業株式会社 食品用包装袋
JP7114059B2 (ja) 2018-06-07 2022-08-08 三甲株式会社 トレー
JP6991930B2 (ja) 2018-06-07 2022-01-13 相互印刷株式会社 プレススルーパックの包装体
JP6594576B1 (ja) 2018-06-07 2019-10-23 キヤノン株式会社 光学系、それを備える撮像装置及び撮像システム
JP6788174B1 (ja) 2019-06-11 2020-11-25 馨 林谷 母板に雑草粘着液排除孔のある刈り払い刃。
JP7324556B1 (ja) 2023-06-11 2023-08-10 合同会社パブテックラボ プログラム及び避難者支援システム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63221677A (ja) * 1987-03-10 1988-09-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP2002111008A (ja) * 2000-10-04 2002-04-12 Canon Inc 薄膜トランジスタアレー
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
JP2009004733A (ja) * 2007-05-18 2009-01-08 Canon Inc インバータの作製方法及びインバータ
TW200931503A (en) * 2007-10-10 2009-07-16 Semiconductor Energy Lab Method of manufacturing semiconductor device
WO2009081885A1 (ja) * 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. 酸化物半導体電界効果型トランジスタ及びその製造方法
JP2009176865A (ja) * 2008-01-23 2009-08-06 Canon Inc 薄膜トランジスタ及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"High field-effect mobility zinc oxide thin film transistors produced at room temperature", E. Fortunato et al., Journal of Non-Crystalline Solids, Volumes 338–340, 15 June 2004, Pages 806–809 *

Also Published As

Publication number Publication date
KR101772639B1 (ko) 2017-08-29
JP2019186570A (ja) 2019-10-24
TWI664680B (zh) 2019-07-01
TW202431431A (zh) 2024-08-01
JP2011103458A (ja) 2011-05-26
TWI733054B (zh) 2021-07-11
TWI821895B (zh) 2023-11-11
JP2024012542A (ja) 2024-01-30
WO2011046048A1 (en) 2011-04-21
US20190088785A1 (en) 2019-03-21
US12389631B2 (en) 2025-08-12
JP6023236B2 (ja) 2016-11-09
JP7383739B2 (ja) 2023-11-20
TW201921513A (zh) 2019-06-01
US10777682B2 (en) 2020-09-15
TWI755747B (zh) 2022-02-21
US20250344441A1 (en) 2025-11-06
JP2017028308A (ja) 2017-02-02
JP6595741B2 (ja) 2019-10-23
JP2021044584A (ja) 2021-03-18
JP6513875B2 (ja) 2019-05-15
JP2019091949A (ja) 2019-06-13
JP6199465B2 (ja) 2017-09-20
JP7012810B2 (ja) 2022-01-28
KR20120099432A (ko) 2012-09-10
JP7482310B2 (ja) 2024-05-13
TW201937612A (zh) 2019-09-16
TW201547031A (zh) 2015-12-16
JP2015119199A (ja) 2015-06-25
TW201123452A (en) 2011-07-01
JP2022044680A (ja) 2022-03-17
KR20170098992A (ko) 2017-08-30
JP2019071455A (ja) 2019-05-09
TWI897057B (zh) 2025-09-11
TWI583001B (zh) 2017-05-11
US10074747B2 (en) 2018-09-11
JP2014082515A (ja) 2014-05-08
US20130193434A1 (en) 2013-08-01
US11837461B2 (en) 2023-12-05
US20110089414A1 (en) 2011-04-21
TW202238739A (zh) 2022-10-01
US20240243204A1 (en) 2024-07-18
JP6810225B2 (ja) 2021-01-06
JP6557437B2 (ja) 2019-08-07
US9666678B2 (en) 2017-05-30
TW201735186A (zh) 2017-10-01
US20170092776A1 (en) 2017-03-30
JP2020074374A (ja) 2020-05-14
TWI697055B (zh) 2020-06-21
JP2024096251A (ja) 2024-07-12
KR101915251B1 (ko) 2018-11-06
US20210143281A1 (en) 2021-05-13
TW202038341A (zh) 2020-10-16
US8421068B2 (en) 2013-04-16
JP6462798B2 (ja) 2019-01-30
JP2017204658A (ja) 2017-11-16

Similar Documents

Publication Publication Date Title
JP7482310B2 (ja) 半導体装置
TWI555204B (zh) 半導體裝置
JP5184615B2 (ja) 半導体素子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees