JP5824266B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5824266B2 JP5824266B2 JP2011158668A JP2011158668A JP5824266B2 JP 5824266 B2 JP5824266 B2 JP 5824266B2 JP 2011158668 A JP2011158668 A JP 2011158668A JP 2011158668 A JP2011158668 A JP 2011158668A JP 5824266 B2 JP5824266 B2 JP 5824266B2
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- insulating layer
- layer
- transistor
- coil
- antenna
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- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07773—Antenna details
- G06K19/07777—Antenna details the antenna being of the inductive type
- G06K19/07779—Antenna details the antenna being of the inductive type the inductive antenna being a coil
- G06K19/07783—Antenna details the antenna being of the inductive type the inductive antenna being a coil the coil being planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
本実施の形態では、整流回路を用いた半導体装置(RFID)の一形態を図1及び図2を用いて説明する。
本実施の形態では実施の形態1で示した半導体装置(RFID)の作製方法について、図3乃至図7を用いて説明を行う。なお、以下に説明する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では実施の形態2で示した図4(B)に示した半導体装置(RFID)の作製方法の一例について、図8及び図9を用いて詳細に説明する。なお、以下に説明する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。また、図4(B)は、図4(A)に示した半導体装置300と同一の作製方法が多く、同一の作製方法は省略して説明する。なお、図8(A)に示した断面図は図6(B)に示した断面図と同一であり、図5(A)乃至図5(C)、及び図6(A)の作製方法に準拠して図8(A)が作製される。
上記実施の形態1乃至3において、トランジスタの半導体層に用いることのできる他の材料の例を説明する。
本実施の形態では、上記実施の形態1乃至4において、トランジスタの半導体層に用いることのできる他の材料として、酸化物半導体層を用いたトランジスタの一例を、図10を用いて説明する。なお、トランジスタの構造は特に限定されず、例えば、トップゲート構造またはボトムゲート構造の、スタガ型またはプレーナ型など、適当な構造を採用することができる。また、トランジスタはチャネル形成領域を一つ有するシングルゲート構造でも、二つ有するダブルゲート構造であっても、三つ有するトリプルゲート構造であっても良い。また、チャネル領域の上下にゲート絶縁層を介して配置された2つのゲート電極を有する、デュアルゲート型でもよい。なお、以下に説明する部分には同一の符号を異なる図面間で共通して用い、その繰り返しの説明は省略する。
本実施の形態では、上記実施の形態5において、図10(A)に示した酸化物半導体層を用いたトランジスタの作製方法の一例を、図11を用いて詳細に説明する。
本実施の形態では、本発明の一態様に係る整流回路を備えたRFタグの使用例について図12を用いながら説明する。RFIDの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図12(A)参照)、包装用容器類(包装紙やボトル等、図12(C)参照)、記録媒体(DVDソフトやビデオテープ等、図12(B)参照)、乗り物類(自転車等、図12(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図12(E)、図12(F)参照)等に設けて使用することができる。
101 論理回路
102 アンテナ回路
103 復調回路
104 変調回路
110 アンテナ
111 アンテナ
112 共振容量
113 整流回路
114 定電圧回路
117 クロック生成回路
120 容量素子
121 コイル
123 トランジスタ
124 コイル
125 トランジスタ
126 容量素子
150 RFID
300 半導体装置
301 コイル
302 コイル
310 半導体装置
311 コイル
312 コイル
320 半導体装置
321 コイル
322 コイル
331a 接続電極層
331b 接続電極層
401 基板
402 絶縁層
403 半導体層
403a 半導体層
403b 半導体層
404 ゲート絶縁層
405 ゲート電極層
406 保護絶縁層
407a チャネル形成領域
407b 不純物領域
407c 不純物領域
408 絶縁層
409 絶縁層
410 絶縁層
411a ソース電極層
411b ドレイン電極層
411c ソース電極層
411d ドレイン電極層
412a 接続電極層
412b 接続電極層
412c 接続電極層
413 無機絶縁層
414 絶縁層
415a 開口部
415b 開口部
415c 開口部
416a 領域
416b 領域
416c 領域
417 接続電極層
418 絶縁層
419 導電層
420 導電層
421 無機絶縁層
422 アンテナ
423 周辺部
424 領域
450 素子層
450a トランジスタ
450b トランジスタ
505 基板
506 保護絶縁層
507 ゲート絶縁層
510 トランジスタ
511 ゲート電極
515a ソース電極またはドレイン電極
515b ソース電極またはドレイン電極
516 絶縁層
530 酸化物半導体層
531 酸化物半導体層
600 基板
601 ゲート電極
602 ゲート絶縁層
603 酸化物半導体層
605a ソース電極またはドレイン電極
605b ソース電極またはドレイン電極
607 絶縁層
609 保護絶縁層
610 トランジスタ
620 トランジスタ
627 絶縁層
630 トランジスタ
636a 配線
636b 配線
637 絶縁層
640 トランジスタ
704 半導体層
801 絶縁層
802 開口部
803 絶縁層
804 導電層
805 導電層
806 無機絶縁層
807 周辺部
808 領域
4000 RFID
Claims (5)
- アンテナと、
整流回路と、を有し、
前記整流回路は、第1のトランジスタと、第2のトランジスタと、第1のコイルと、第2のコイルと、第1の容量素子と、を有し、
前記第1のトランジスタのドレインは、前記第1の容量素子の第1の端子と電気的に接続され、
前記第1の容量素子の第2の端子は、前記アンテナの第1の端子と電気的に接続され、
前記第2のトランジスタのドレインは、前記アンテナの第2の端子と電気的に接続され、
前記第2のトランジスタのソースは、前記第1のトランジスタのドレインと電気的に接続され、
前記第1のコイルは、前記第1のトランジスタのゲートとドレインとの間に電気的に接続され、
前記第2のコイルは、前記第2のトランジスタのゲートとドレインとの間に電気的に接続され、
前記第1のコイルは、前記アンテナとの電磁結合により前記第1のトランジスタのゲートの電位を増幅させるように、前記アンテナと重なり、
前記第2のコイルは、前記アンテナとの電磁結合により前記第2のトランジスタのゲートの電位を増幅させるように、前記アンテナと重なることを特徴とする半導体装置。 - 請求項1において、
前記第1のコイルは、前記第2のコイルと重なる領域を有することを特徴とする半導体装置。 - 請求項1または請求項2において、
第2の容量素子を有し、
前記第2の容量素子の第1の端子は、前記第1のトランジスタのソースと電気的に接続され、
前記第2の容量素子の第2の端子は、前記第2のトランジスタのドレインと電気的に接続されていることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1のコイル、及び前記第2のコイルは、絶縁層を介して前記アンテナと、重なる領域を有することを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記第1のトランジスタ、及び前記第2のトランジスタは、酸化物半導体材料を含んで構成されることを特徴とする半導体装置。
Priority Applications (1)
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JP2011158668A JP5824266B2 (ja) | 2010-07-29 | 2011-07-20 | 半導体装置 |
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JP2012050071A5 JP2012050071A5 (ja) | 2014-08-07 |
JP5824266B2 true JP5824266B2 (ja) | 2015-11-25 |
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JP (1) | JP5824266B2 (ja) |
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JP5890251B2 (ja) | 2011-06-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 通信方法 |
WO2013108893A1 (ja) * | 2012-01-18 | 2013-07-25 | 古河電気工業株式会社 | 無線電力伝送システム、送電装置、および、受電装置 |
KR102029286B1 (ko) | 2012-03-09 | 2019-10-07 | 버슘머트리얼즈 유에스, 엘엘씨 | 디스플레이 디바이스를 위한 배리어 물질 |
US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10339344B2 (en) * | 2017-09-28 | 2019-07-02 | Blind Insites Llc | Electromagnetic marking device and methods for its use |
US10547299B1 (en) * | 2019-01-29 | 2020-01-28 | Texas Instruments Incorporated | Fast transient and low power thin-gate based high-voltage switch |
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US5293308A (en) * | 1991-03-26 | 1994-03-08 | Auckland Uniservices Limited | Inductive power distribution system |
US5625549A (en) | 1994-09-23 | 1997-04-29 | Kaman Electronics Corporation | Boost-buck rectifier bridge circuit topology with diode decoupled boost stage |
JP3032159B2 (ja) * | 1996-09-24 | 2000-04-10 | 株式会社日立製作所 | 分析システム |
JP2000197275A (ja) * | 1998-12-24 | 2000-07-14 | Sanyo Electric Co Ltd | 非接触充電器の制御装置 |
GB2372644B (en) | 2001-02-16 | 2005-02-23 | Mitel Semiconductor Ab | MOS circuit for lowering forward voltage of diodes |
JP3906722B2 (ja) * | 2002-03-26 | 2007-04-18 | 松下電工株式会社 | 非接触給電システム |
DE102004013177B4 (de) | 2004-03-17 | 2006-05-18 | Infineon Technologies Ag | Datenübertragungseinheit mit einer Datenübertragungsschnittstelle und ein Verfahren zum Betreiben der Datenübertragungseinheit |
JP4519713B2 (ja) | 2004-06-17 | 2010-08-04 | 株式会社東芝 | 整流回路とこれを用いた無線通信装置 |
JP4059874B2 (ja) | 2004-09-30 | 2008-03-12 | 富士通株式会社 | 整流回路 |
US7424266B2 (en) | 2004-11-09 | 2008-09-09 | Kabushiki Kaisha Toshiba | Rectifier circuit and RFID tag |
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JP5138327B2 (ja) * | 2006-10-06 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 整流回路及び該整流回路を用いた半導体装置 |
US7889528B2 (en) | 2006-11-29 | 2011-02-15 | Semiconductor Energy Laroratory Co., Ltd. | Rectifier circuit, power supply circuit, and semiconductor device |
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US7750852B2 (en) * | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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KR101837102B1 (ko) | 2009-10-30 | 2018-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101693914B1 (ko) | 2009-11-20 | 2017-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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