TWI244742B - Fan out type wafer level package structure and method of the same - Google Patents

Fan out type wafer level package structure and method of the same Download PDF

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Publication number
TWI244742B
TWI244742B TW093109319A TW93109319A TWI244742B TW I244742 B TWI244742 B TW I244742B TW 093109319 A TW093109319 A TW 093109319A TW 93109319 A TW93109319 A TW 93109319A TW I244742 B TWI244742 B TW I244742B
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patent application
item
scope
type package
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TW093109319A
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TW200520190A (en
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Wen-Kun Yang
Wen-Pin Yang
Shih-Li Chen
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Advanced Chip Eng Tech Inc
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Description

1244742 案號 93109^H-生--3_g_ ^ 修正_1 五、發明說明（1) 【發明所屬之技術領威】 本發明與一種半導體之封裝有關，特別是一種擴散式 (fan out type)晶圓沒態封褒（wafer level package： WLP) 〇 【先前技術】 半導體的技術已經發展的相當的迅速，特別地是半導體晶 粒（d i es)有朝向小蜇化的趨勢。然而，對於半導體晶粒 (d i e s)之功能的需求相對的具有多樣化的趨勢。也就是 說，上述半導體晶粒（d i es)在一個很小的區域中必須具 有更多的輸入/輸出墊（1/0 Pads)，因而使得引線 (pins)的密度也快速的提高了。這會導致上述半導體晶 粒（dies)的封裝變的越來越困難，並且良率也因此降低 T ° . 上述封裝結構的主要目的在於保護上述晶粒免於受到 外在的損害。再者，由於上述晶粒所產生的熱必須有效率 地透過上述封裝結構來擴散以確保上述晶粒的運作。 ^
、一早期的導線架封裝技術已經不適合引線（pins)密户 過南之更進步的半導體晶粒。因此，一新的球陣列（ Grid Array: BGA)封裝技術已經被發展出來，其可以二 足上述更進步之半導體晶粒的封裝需求。上述球陣列封另 具有一個好處，也就是它的引 ^ 導線架封裝爽锟丨十M /八令比上主 采付小之間距（p i t c h)，並且上述引線 1244742- 案號 93109319_年月日_^ 五、發明說明（2) (p i n s)不容易損害與變形。此外，較短的訊號傳遞距離 可以有益於提昇操作頻率以符合更快效率的需求。例如： 由％3^1111丨1^1'等人所提出之美國第5,629,83 5號專利，其揭 露了一球陣列（BGA)封裝；美國第5，2 3 9，1 9 8號專利揭露 了另一個封裝，其係具有一導電圖案形成於其上之FR4底 材附著於一印刷電路板（PCB)之上；由本發明人所提出 之台灣第1 77, 76 6號專利，其揭露了一擴散式（fan out type)晶圓型態封裝（WLP)。 大部分的封裝技術都是先將一晶圓上的晶粒分離成為 個別的晶粒’然後再在封裝與測試上述個別的晶粒。另外 一種稱為晶圓型態封裝（wafer levei package: WLP)之 封裝技術可以在分離個別的晶粒之前就封裝上述晶圓上之 晶粒。上述晶圓型態封裝（wafer level package: WLP) 具有一些好處，例如：一個較短的生產週期（cycle time)、較低的價格以及不需要填充物（under_f in)或 鱗模（molding)。由Adams等人所提出之美國第 5, 323, 05 1號專利"半導體晶圓型態封裝（wlp)，，揭露了 一晶圓型悲封裝（W L P)之技術。上面技術描述如下。如 圖一所示，一晶粒4形成於一半導體晶圓2之一表面之上， 並且一具有預定圖案之玻璃牆熔塊8以作為黏合劑之上蓋 晶圓（cap wafer) 6置於上述半導體晶圓2之上，使得上 述玻璃牆熔塊8可以完全包圍著上述晶粒4。然後，研磨沒 有晶粒4之半導體晶圓2之表面以降低上述半導體晶圓2之 高度，這一個步驟通常稱為”背磨”"back 1244742- 案號93109319_年月日__1 五、發明說明（3) grinding1’）。上述晶粒4密封在一由上述半導體晶圓2、 上蓋晶圓（cap wafer) 6與玻璃牆炫塊8所組合形成之預 定大小的空腔内。一複數個金屬圖形1 0形成了複數個電極 於上述半導體底材晶圓2之上，其係提供了上述晶粒4之電 性耦合。一複數個金屬線1 2黏合到一形成於上述金屬圖形 1 0之外部之複數個墊之上，並且透過洞1 4延伸而耦接外面 的電性晶粒（未圖示）。
如上所述，上述晶粒的大小是非常小的，並且輸入/輸 出塾（I/O pads)是形成於傳統習知技術之晶粒表面上。 因此’上述墊（pacjs)的數目是受到限制的，並且墊 / pads)之間太短的間距會導致訊號耦合或訊號干擾的問 ^ 上述銲錫也會因為上述塾（pads)之間太短的間距而 的大^成一銲錫橋（solder bridge)。此外，，上述晶粒 裝無、小渐漸地變得越來越小，並且上述晶粒之積體電路封 準的$透過一些封裝技術（例如晶片大小封裝）而具有標 小的b小’並且測試設備、封裝設備等等對於一些固定大 曰曰教或封裝也不能持續的被使用。 【發明内容】
因此，势：】 本發明m於上述習知技術所提到的問題而提出本發明，而 形成方之目的係在於提供擴散式晶圓型態封裝之結構與其 乃法。
供擴散式晶圓蜇態封裝之結構以
第7頁 p44742__ 案號9310931Q _年 五、發明說明（4) 、’隹持上述封裝結構之二個相鄰之 距。
修正
間的墊具有 —適當的間 此外’本發明之再一目的在於提供 ^ 曰幻社％捉供擴散式晶圓 m構以避免訊號耦合與訊號干擾的情形。 再者，本發明之目的在於降低封裝結構之價袼 型態封裝之 另外，本發明之又 目的在於提高封裝結構 ^發明之另一目的在於提供具有可調整大小之封裳社 八係利用測試設備、封裝設備等等來達到固定=曰 或封裝體。 的日日
如上所述’本發明之再一目的在於提供一種擴散式晶圓型 態封裝之方法。首先，一複數個晶粒附著到一絕緣基底之 上。一第一材料層形成於上述絕緣基底之上，其中上述第 一材料層填滿於上述絕緣基底之上之複數個晶粒之間，並 且上述第一材料層與複數個晶粒之表面在相同的高度。然 後，烘烤上述第一材料層。一第二材料層形成於上述第一 材料層與複數個晶粒之上。蝕刻上述複數個晶粒之墊之上 之第二材料層之一部分區域，以形成第一開口。之後，烘 烤上述第二材料層。接觸導電層形成於上述第一開口之上 以分別與上述墊作電性耦合。一光阻層形成於上述第二材 料層與第一接觸導電層之上。去除上述第一光阻層之一部
第8頁
修正 曰 J3109319 五、發明說明（5) ij域:形成一扇案並且暴露上"一接觸導電層。 C形成於上述扇出圖案之上，並且上述導線分別 德、^接觸導電層耦合。去除剩餘之上述第一光阻層。之 ϋ絕緣層形成於上述導線與第二材料層之上。去除 ，，線上之絕緣層之一部分區域以形成第二開口。烘 ^上述絕緣層。最後，鍛燒銲接球於上述第二開口之上， ”且切割上述基底以絕緣上述複數個晶粒。 。上述封 、第二介 述晶粒係 於上述絕 外填滿上 面在相同 晶粒之上 晶粒之墊 之以分別 介電層與 相對應的 上述相對 絕緣層形 層具有第 於上述第 裝結構 電層、 附著到 緣基底 述第一 的南 ，並且 之上。 與上述 相對應 接觸導 應的端 成於上 二開口 二開口 ^七明也提供一種擴散式型態封裝之結構 包括··一絕緣基底、一晶粒、第一介電層 接觸導電層、導線、絕緣層與銲接球。上 上述絕緣基底之上。上述第一介電層形成 =上，其係在上述絕緣基底之上之晶粒之 二電層’其中上述第一介電層與晶粒之表 X。上述第二介電層形成於第一介電層與 上述第二介電層具有第一開口形成於上述 上述接觸導電層形成於上述第一開口之上 塾作電性耗合。上述導線形成於上述第二 觸導電層之上，並且上述導線從上述 電曰往外延伸到相對應的 點是在上述第二介電層之表面之…： 二介電層之上，並且上述絕Ϊ ;^導線之上。鍛燒之銲接球形成 ，/、係分別與上述導線耦合。 第9頁 而 顯 來 寸 尺 的 際 實 依 不 並 件 元 之 素 要 成 構 同 不 沒 分 部 的 義 意 無 且 並 的 大 擴 是 \ 大 的 件 元樣 關這 相， 些來 一出。 〇晝解 示有理 與 述 描 的 楚 清 更 一 之 明 發 本 供 提 易 容 較 比 1244742 案號93109319_年月日__1 五、發明說明（6) 【實施方式】 本發明之一些實施例將於目前詳細地描述。然而，除了那 些明確地描述之外，本發明也可以在一寬廣的範圍之其它 實施例中被實施，並且本發明之範圍也不限制於所描述之 專利範圍。 本發明之本質在於拾取與置放標準晶粒於一新的基底之上 以得到一比傳統的晶圓上之晶粒之間的距離更適當與更寬 廣的距離。因此，上述封裝結構具有一比上述晶粒大小還 大的球陣列以避免具有太接近的球間距的問題。此外，上 述晶粒可以與被動元件（例如··電容）或其它具有並列結 構或堆疊結構之晶粒一起封裝。本發明之詳細方法將描述 如下。 一具有晶粒之完成製造矽晶圓置放於一底盤上，然後藉由 背磨（b a c k 1 app i n g)上述完成製造矽晶圓可以得到一範 圍為50〜30 0微米（micron)之上述完成製造之石夕晶圓厚 度。上述之完成製造之矽晶圓厚度可以很容易地切割上述 石夕晶圓上之晶粒以成為個別的晶粒。如果不經過背磨 (back lapping)而上述之完成製造石夕晶圓不會很難切割
第10頁 五、發明說明（7) =:舌上述为磨（back lapping)步驟是可 於切割前，一介雷®早、登！ u /丄 j M破省略的 m — ;丨电層疋選擇性地形成於上述宗士、制 J 0之上以保護晶粒免於損宝。 &凡成製造矽 月 曰
曰曰 ^個別晶粒接著經過測試以從其 1:。然後，拿取上述標準良好的晶粒"。匕2好晶粒 ^的基底1 00之上，使得二個相鄰的晶粒之 放在一 ^寬廣的距離，並且利用—具有良好熱 -個
悲材料與/或熱烘烤型態附著材料（未圖示）1 之/v供烤型 粒110到上述基底100之上，如圖2A所示。上附者/述晶 利用塗佈方式形成在上述基底1〇〇之上，並且< 附者材料係 料之厚度最好是在20〜60微米（micron)之 ^附著材 粒11:置放於上述附著材料時，上述附著“係二=曰 或熱能來烘烤。上述置於基底1〇〇之上之二個相^曰、 =:T广二而具有足夠寬廣的空間以形成二粒步之驟 之扇出（fan out)球陣列。因此，本發明可以 理想的球間距以避免訊號耦合與訊號干擾的問並 輸出（1/0)埠（球）的數目，甚至晶粒的大 小也皮的更小了。上述晶粒i丨〇具有輸入/輸出（1/〇)墊
1 = ^於上表面（如圖四所示）。被動元件ιΐ4或晶粒 也置放於上述基底1 00之相鄰的位置之上以得到一滅波 或其，功能，如圖二B與圖二c所示。上述基底1〇〇之材質 可以疋玻璃、矽、陶莞或晶體材料等等，並且其具有圓形 或矩形的形狀。在本發明中，上述封裝在一起之晶粒與被 動元件之數目是不受限制的。藉由本發明，超過三個晶粒
修正 θ _____^^_93109319 五、發明說明（8) 與被動元件也是可口义姑4 j 〒皮封裝在相同的圭"f梦4士 士巷τ4>» 明之附著材料悬杯SL ±的封裝、、、口構中的。本發 上述起因於曰如11η命甘 …等材枓攻樣才可以使得 4巧14心日日粒J J 〇與基底1 〇〇之 (例如應力）被避免。 ]概度差異所產生的問題 的T Π2ΐ是透過一個單-的晶板來完成 與理解:為“’早化並提供-個對本發明之較清楚的描述 :且：：f 1 20係形成而填滿於上述相鄰的晶粒1 1。之間， i、fi 材料層120與晶粒ug之表面在相同的古产。 ίί=Γ:Γ之Λ料可以是⑽烘烤型態材^ =法來？成一材上料Λ12。可以藉由一網印的方法= uv^ /, ## ,；；, "Λ ΓΛΥ；20 :第樹所提之包括基底：二 1、1。形成於其曰上 02看起來像一個晶圓具有晶粒 i圖：戶:：，一第-材料層1 2 2塗佈形成於上述結構1 〇 2之 烤材料f二材料層122之材料可以是訂烘烤材料或熱烘 ，材=風例如·· BCB、環氧化物層、SINR317〇 (由Shin_ Etsu化學有限公司所製造）等等。然後，利用一 :244342- 案號93109319 __年月日 修年_， ' 五、發明說明（9) 除上述晶粒1 1 0之墊1 1 6之上之第二材料層i 2 2之部分區 域’以形成第一開口 1 2 4於上述墊1 1 6之上，之後，藉由U V 或熱能來烘烤上述第二材料層1 2 2。接著，選擇性地利用 電衆姓刻（R I E)來清除上述墊1 1 6之表面以確保沒有殘留 的材料留在上述墊1 1 6之上。 接觸導電層126形成於上述墊n 6之上，如圖六所示。上述 =觸導電層126之較佳材料是鈦（Ti)、銅（Cu)或其組 ^ °上述接觸導電層12 6可以藉由一物理方法、化學方法 或2組合之形成方式來形成，上述形成方法例如：化學氣 相’儿積、物理氣相沉積、濺鍍與蒸鍍。一光阻層^ 2 8形成 於上j第二材料層122與接觸導電層126之上，然後，藉由 S用一光罩之曝光顯影以形成上述光阻層128之扇出圖 ^ 上述扇出圖案具有複數個扇出開口 ，該開口係從上述 却11Y到上述第二材料層12 2之一表面内之端點。也就是 執’了個相鄰的扇出開口之端點之間距可以比二個相鄰的 1 &之間距寬廣。之後，藉由蒸鍍方法，導線13 0形成於 Λ / 導電層Μ6之上，如圖七（垂直圖示）與圖八所 :料圖不，沿著途七之a — a，方向）。上述導線130之 料車乂佳的是鎳（Ni)、銅（Cu)、金（Au)或其組合。 睛參考第九圖 後，一絕緣層 上，並且藉由 之上。接著，
’触刻上述光阻層1 2 8與接觸導電層1 2 6，然 1 3 2形成於上述導線！ 3 〇與第二材料層1 2 2之 一光罩使知第二開口 j 3 4形成於上述導線i 3 〇 烘烤上述絕緣層1 3 2。上述絕緣層i 3 2可以解
第13頁 124AJ42 案號 93109319_年月 五、發明說明（10) 由旋轉塗佈或網印的方式來形成。上述第二開口 1 34之位 置"T以形成上述晶粒1 1 〇或第一材料層1 2 〇之上，較佳地是 ^別地形成於上述導線1 30之端點附近，所以相鄰的二個 第二開口 1 3 4之間有一適宜距離可以形成錫球i 3 6於第二開 口 1 34之上，這樣就沒有訊號耦合與訊號干擾的問題。 請參考第十圖，一環氧化物層14〇形成於上述基底1〇〇之背 表面之上’也就是沒有晶粒1丨〇形成於其上之基底1 〇 〇之表 面。然後’就由一光罩使得一上標形成於上述環氧化物層 1#4 0之上，並且烘烤上述環氧化物層1 4〇。或者是利用印刷 模板油印’熱能/UV供烤以形成一上標。上述上標是用來 確 < 元件的名稱。上述形成環氧化物層1 4 〇之步驟也可以 被省略。接著’上述錫球1 3 6置於上述第二開口 1 3 4之上， 並且藉由一紅外線回流（I r r e f 1 〇 w)的方法，將錫球1 3 6與 上述導線13 0之表面連接在一起。 取後’前面所述之封裝基底1 〇 〇沿著切割線1 38進行切割以 隔絕個別的封裝積體電路。如上所述，上述封裝積體電路 可以包括被動元件1 42與晶粒丨丨〇，如圖十一所示。上述封 裝積體電路也可以是一並列結構之多晶粒，如圖十二所 示0 ^發明^封裝方法甚至可以應用以形成具有堆疊結構之多 曰曰粒。#參考第十三圖，在形成上述絕緣層1 3 2或第二開 口 1 3 4之步驟之後’於晶粒11 0之垂直方向將晶粒11 0 a置於
f244742 — I五、發明說明（π) 修正 a ±_____月 上述絕緣層1 3 2之上。妙％ ^ 成1 〇〇咖⑫ 然後，弟三材料層120a、第四鉍粗 層1223與第二接觸逡蕾成10。， 四材枓 & Ϊ9Λ ^ 觸導電層126a也依序形成。蝕刻第： 層1 2 0 a、第四材料芦7 9 乐一材枓 α夕a 、# ^付層1 223與絕緣層1 32，以形成第=開 :道Γ 導電材料148置於上述第三開口之内，=, 述導電材料148與上述導線13〇 上 以是一銲錫。接荽相， 工4守电柯# 1 48可 f _ ^ , ’類似上述之圖七到圖十之圖示， 墙 一導線 130a、一 、，一 第 .;,, 弟一、名緣層1 32a與錫球1 36依序形忐#δ ^地，上述第三材料層120a與第四材料層122^成。類 疋UV烘烤型態或熱烘烤型態之材 邛可以 126a之較佳的材料是 这第一接觸導電層 線130a之較佳的材料是銅（Cu) “而上 U或其組合。雖然圖十三僅僅顯示了 —且1、金 之封裝堆疊結構，彳艮明顯地一個比二個I觀;ί 一個晶粒 裝結構也可以由上面所描述的方式得到曰d還夕之堆叠封 由此， 構之二 明可以 利用了 小是很 並且提 可以很 本發明 所主張 根 個 避 大 容 以 之 據 相 免 個 的 上 易 較 專 本發明 鄰之間 玻璃底 ，所以 述封裝 地調整 佳實施 利權利 ，上述之封裝結構可以維持上 的錫球具有一適當的間距。因2封裝結 合與訊號干擾的情形。再， 本發 材提供給LCD，並且上述 發明也 本發明可以降低上述封構材的大 結構的良，。此外，本：：構的價格， 以適合測試設備、封裝設備等等裝大小 例况明如上’然其並非用 範圍。其專利保護範圍木.a Γ疋本發明 耗圍當硯後附之申技
第15頁 244742 案號 93109319 年月曰 修正 五、發明說明（12) 專利範圍及其等同領域而定。凡熟悉此領域之技藝者，在 不脫離本專利精神或範圍内，所作之更動或潤飾，均屬於 本發明所揭示精神下所完成之等效改變或設計，且應包含 在下述之申請專利範圍内。
第16頁 1244741 案號 93109319 年 月 曰 修正 圖式簡單說明 【圖式簡單說明 為傳統技術之一半 A到二C為利用拿與 之示意圖。 為形成第一材料層 為形成第二材料層 為餘刻晶粒之塾之 一開口之示意圖。 圖一 圖二 基底 圖三 圖四 圖五 成第 圖六 圖七 意圖 圖八 圖案 圖九 圖。 圖十 圖十 結構 圖十 圖。 圖十 示意 導體晶圓型態封裝之示意圖。 取之方式以重置標準的晶粒於一新 於基底之上之示意圖。 於第一材料層之上之示意圖。 上之第二材料層之一部分區域以形 為形成接觸導電層於第一開口之上之示意圖。 為藉由一光阻層以形成導線於扇出圖案之上之縱向示 為藉由一光阻層沿 之上之橫向示意圖 為形成絕緣層於上 著圖七之’a-a’以形成導線於扇出 〇 述導線與第二材料層之上之示意 為根據本發明之一封裝結構之示意圖。 一為根據本發明之一具有一晶粒與一被動元件之封裝 之示意圖。 二為根據本發明之一具有二個晶粒之封裝結構之示意 三為根據本發明之一具有二個晶粒之封裝堆疊結構之 圖。 主要元件符號說明
第17頁 T244Z42 案號 93109319 年 月 曰 修正 圖式簡單說明 半導體晶圓2 晶粒 4、1 1 0、1 1 2、1 1 0 a 上蓋晶圓（cap wafer) 玻璃牆熔塊8 金屬圖形1 0 金屬線1 2 洞14 基底100 結構1 0 2 被動元件1 1 4、1 4 2 墊116 第一材料層1 2 0 第二材料層1 2 2 第三材料層120a 第四材料層122a 第一開口 1 2 4 接觸導電層126 第二接觸導電層126a 光阻層1 2 8 導線1 3 0 第二導線1 3 0 a 絕緣層1 3 2 第二絕緣層1 3 2 a 第二開口 1 3 4
第18頁 1244742- 案號93109319_年月日 修正 圖式簡單說明 錫球1 3 6 切割線1 3 8 環氧化物層1 4 0 導電材料1 4 8
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Claims (1)

1244742^ 案號 93109319 年月曰 修正 六、申請專利範圍 1 . 一種擴散式晶圓型態封裝之形成方法，包括： 附著一複數個第一晶粒到一絕緣基底； 形成一第一材料層於該絕緣基底之上，其係在該絕緣基 底之上之該複數個第一晶粒之間填滿該第一材料層； 烘烤該第一材料層； 形成一第二材料層於該第一材料層與該複數個第一晶粒之 上； 蝕刻該複數個第一晶粒之第一墊之上之該第二材料層之 一部分區域，以形成第一開口； 形成第一接觸導電層於該第一開口之上以分別與該第一 墊作電性耦合； 形成一第一光阻層於該第二材料層與該第一接觸導電層 之上； 去除該第一光阻層之一部分區域以形成一第一扇出圖案 並且暴露該第一接觸導電層； 形成第一導線於該第一扇出圖案之上，並且該第一導線 分別與該第一接觸導電層耦合； 去除剩餘之該第一光阻層； 形成一第一絕緣層於該第一導線與該第二材料層之上； 去除該第一導線上之該第一絕緣層之一部分區域以形成 第二開口； 烘烤該第一絕緣層；以及 鍛燒銲接球於該第二開口之上。
第20頁 1244742 案號93109319_年月曰 修正_> 六、申請專利範圍 2 ·如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該第一材料層與該複數個第一晶粒之表面在相同 的局度。 3.如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，更包括一於該鍛燒銲接球步驟之後切割該基底以絕緣 該複數個第一晶粒之步驟。 4 .如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，更包括一於該形成該第一材料層步驟之前在該絕緣基 底之上之該複數個第一晶粒之間附著一複數個第一被動元 件到該絕緣基底之上之步驟。 5 .如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該複數個第一晶粒包括至少二種型態之晶粒。 6 .如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該複數個第一晶粒係藉由切割一完成製造之矽晶 圓而形成。 7.如申請專利範圍第6項之擴散式晶圓型態封裝之形成方 法，其中該完成製造之矽晶圓係利用背磨以得到一厚度約 50〜3 0 0微米（micron)之該完成製造之矽晶圓。
第21頁 244742 案號 93109319_年月日__> 六、申請專利範圍 8 ·如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該第一材料層與該第二材料層包括UV烘烤型態材 料、熱烘烤型態材料與其組合。 如 方 成 形 之 裝 封 態 型 圓 晶 式 散 擴 之 項 ，用 法利 後 之 驟 步。 域驟 區步 分之 部面 一表 之個 層一 料每 材之 二塾 第一 該第 第刻該 圍蝕潔 範於清 利 一 刻 專括蝕 請包漿 Hnr §、1^¾ Τϋ ^β 法 方。 成驟 形步 之之 裝面 封表 態背 型底 圓基 晶該 式於 散層 擴物 之化 項氧 1環帛-J 圍 利 專 請 中 如 成 形 1 括 包 更 封銅 態、 • 1 圓 T 晶( 式鈦 散括 擴包 之層 項電 導 第i -_ 觸 圍 £接 一 利 專 請 申 如 第 該 中 其。 ， 合 法組 方其 成與 形} 第 圍 範 利 專 請 申 如 法 方 成 形金 之、 裝 封CU 態C 型銅 tola、 日QaN1/ • 1 式N 散C 擴鎳 之括 項包 IX 層 線 導。 一合 第組 該其 中與 其 第 圍 範 利 專 請 申 如 法 包 層 緣 絕 該 中 其 方 成 形。 之合 裝組 封其 態與 型脂 圓樹 晶 、 式層 散物 擴化 之氧 項環 11 括 第 圍 範 利 專 請 申 如 法 底 基 緣 絕 該 中 其 方 成材 形體 之晶 裝或 封瓷 態陶 型、 圓碎 晶 、 式璃 散玻 擴是 之質 項材 11 之
第22頁 1244742 案號 93109319_年月日__’ ’ 六、申請專利範圍 料。 1 5 ·如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該絕緣基底之材質是一圓形型態或矩形型態。 1 6 .如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該第一接觸導電層與該第一導線係藉由一包括物 理方法、化學方法及其組合之形成方式而形成。 1 7.如申請專利範圍第1 6項之擴散式晶圓型態封裝之形成 方法，其中該形成方式包括化學氣相沉積、物理氣相沉 積、濺鍍與蒸鍍。 1 8.如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，其中該鍛燒銲接球之步驟包括：藉由一網印的方法置 放該銲接球於該第二開口之上，並且藉由一紅外線回流 (IR ref low)的方法將該銲接球與該第一導線之表面連 接在一起。 1 9 ·如申請專利範圍第1項之擴散式晶圓型態封裝之形成方 法，更包括於去除該第一絕緣層之一部分區域之步驟前之 進一步的步驟，該進一步的步驟是： 於該複數個第一晶粒之垂直方向附著一複數個第二晶粒 到該第一絕緣層；
第23頁 1244742-案號 93109319_年月日_a 六、申請專利範圍 形成一第三材料層於該第一絕緣層之上，其係在該第一 絕緣層之上該複數個第二晶粒之間填滿該第三材料層； 烘烤該第三材料層； 形成一第四材料層於該第三材料層與該複數個第二晶粒 之上； 蝕刻該複數個第二晶粒之第二墊之上之該第四材料層之 一部分區域，以形成第三開口； 形成第二接觸導電層於該第三開口之上以分別與該第二 墊作電性耦合； 去除該第一導線上之該第四材料層、該第三材料層與該 第二材料層之一部分區域以形成第二開口； 以導電材料填充該開口，並且使得該導電材料之表面與該 第四材料層在同一個高度； 形成一第二光阻層於該第四材料層、該導電材料與該第 二接觸導電層之上； 去除該第二光阻層之一部分區域以形成一第二扇出圖案 並且暴露該第二接觸導電層與該導電材料； 形成第二導線於該第二扇出圖案之上，並且該第二導線 分別與相對應的該第二接觸導電層以及相對應的該導電材 料耦合； 去除剩餘之該第二光阻層； 形成一第二絕緣層於該第二導線與該第四材料層之上； 去除該第二導線上之該第二絕緣層之一部分區域以形成 第三開口；
第24頁 1244742- 案號 93109319_年月日__， 六、申請專利範圍 烘烤該第二絕緣層；以及 鍛燒銲接球於該第三開口之上。 2 0 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該第三材料層與該複數個第二晶粒之表面在相 同的高度。 2 1.如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，更包括一切割該基底以隔絕具有該複數個第一晶粒 與該複數個第二晶粒之封裝晶粒之步驟。 2 2 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，更包括一於該形成該第三材料層步驟之前在該第一 絕緣層之上之該複數個第二晶粒之間附著一複數個第二被 動元件到該絕緣基底之上之步驟。 2 3 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該複數個第二晶粒包括至少二種型態之晶粒。 2 4.如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該第三材料層與該第四材料層包括UV烘烤型態 材料、熱供烤型悲材料與其組合。 2 5 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成
第25頁 1244742 案號93109319_年月曰 修正_' 六、申請專利範圍 方法，更包括一於蝕刻該第四材料層之一部分區域步驟之 後利用電漿蝕刻清潔該第二墊之每一個表面之步驟。 2 6 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該第二接觸導電層包括鈦（Ti)、銅（Cu)與 其組合。 2 7 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該第二導線包括鎳（Ni)、銅（Cu)、金 (Au)與其組合。
2 8 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該第二接觸導電層與該第二導線係藉由一包括 物理方法、化學方法及其組合之形成方式而形成。 2 9 .如申請專利範圍第1 9項之擴散式晶圓型態封裝之形成 方法，其中該鍛燒銲接球之步驟包括：藉由一網印的方法 置放該銲接球於該第三開口之上，並且藉由一紅外線回流
(IR reflow)的方法將該銲接球與該第二導線之表面連 接在一起。 3 0 . —種擴散式型態封裝之結構，包括： 一絕緣基底； 一附著到該絕緣基底之第一晶粒；
第26頁 T244742 案號93109319_年月日__' 六、申請專利範圍 一形成於該絕緣基底之上之第一介電層，其係在該絕緣 基底之上之該第一晶粒之外填滿該第一介電層； 一形成於該第一介電層與該第一晶粒之上之第二介電層， 並且該第二介電層具有第一開口形成於該第一晶粒之第一 墊之上； 一形成於該第一開口之上之第一接觸導電層以分別與該 第一墊作電性耦合；
一形成於該第二介電層與該相對應的第一接觸導電層之 上之第一導線，並且該第一導線從該相對應的第一接觸導 電層往外延伸到相對應的第一端點，其中該相對應的第一 端點是在該第二介電層之表面之内； 一形成於該第一導線與該第二介電層之上之第一絕緣 層，並且該第一絕緣層具有第二開口形成於該第一導線之 上；以及 ， 於該第二開口之上鍛燒之銲接球，其分別與該第一導線耦 合0 3 1.如申請專利範圍第3 0項之擴散式型態封裝之結構，其 中該第一介電層與該第一晶粒之表面在相同的高度。
3 2 .如申請專利範圍第3 0項之擴散式型態封裝之結構，更 包括至少一被動元件形成於該絕緣基底之上。 3 3 .如申請專利範圍第3 0項之擴散式型態封裝之結構，更
第27頁 T744747 案號 93109319_年月日_^_' 六、申請專利範圍 包括一第二晶粒形成於該絕緣基底之上。 34.如申請專利範圍第30項之擴散式型態封裝之結構，其 中該第一晶粒係藉由切割一完成製造之基底而形成。 3 5 .如申請專利範圍第3 4項之擴散式型態封裝之結構，其 中該完成製造之基底係利用背磨以得到一厚度約5 0〜3 0 0微 米（micron)之該完成製造基底。
3 6 .如申請專利範圍第3 0項之擴散式型態封裝之結構，其 中該第一介電層與該第二介電層之材料包括UV烘烤型態材 料、熱烘烤型態材料與其組合。 3 7.如申請專利範圍第3 0項之擴散式型態封裝之結構，其 中該第一接觸導電層包括鈦（Ti) 、銅（Cu)與其組合。 38.如申請專利範圍第30項之擴散式型態封裝之結構，其 中該第一導線層包括鎳（Ni)、銅（Cu)、金（Au)與其 組合。
3 9 .如申請專利範圍第3 0項之擴散式型態封裝之結構，其 中該該絕緣基底之材質是玻璃、矽、陶瓷或晶體材料。 4 0 .如申請專利範圍第3 0項之擴散式型態封裝之結構，更
第28頁 1244742 案號 93109319_年月日_«_、’ 六、申請專利範圍 包括一環氧化物層形成於該基底之背表面之上。 4 1.如申請專利範圍第3 0項之擴散式型態封裝之結構，其 中該絕緣層包括環氧化物層、樹脂與其組合。 4 2 .如申請專利範圍第3 0項之擴散式型態封裝之結構，更 包括： 一於該第一晶粒之垂直方向附著在該絕緣基底與該第 一介電層之間之第二晶粒； 一形成該絕緣基底與該第一介電層之間之第三介電層； 一形成於該第一介電層、該第三介電層與該第二晶粒之 間之第四介電層，並且該第四介電層具有第三開口形成於 該第二晶粒之第二墊之上； 一形成於該第三開口之上之第二接觸導電層，其分別與 該第二墊作電性耦合； 一形成於該第一介電層、該第四介電層與該相對應的第 一接觸導電層之第二導線，並且該第二導線係從該相對應 的第二接觸導電層往外延伸到相對應的第二端點，其中該 相對應的第二端點係在該第四介電層之表面之内； 一形成於該第一導線、該第四介電層與該第一介電層之 上之第二絕緣層； 一形成於該第二絕緣層、該第一介電層與該第二導線上 之該第二介電層之上之第四開口；以及 填充該第四開口之導電材質，並且其分別與該第一導線
第29頁 1244742 案號 93109319_年月日__’ 六、申請專利範圍 與該第二導線作電性耦合。 4 3 .如申請專利範圍第4 2項之擴散式型態封裝之結構，其 中該第三介電層與該第二晶粒之表面在相同的高度。 44.如申請專利範圍第42項之擴散式型態封裝之結構，其 中該第三介電層與該第四介電層包括UV供烤型態材料、熱 烘烤型態材料與其組合。 4 5 .如申請專利範圍第4 2項之擴散式型態封裝之結構，其 中該第二接觸導電層包括鈦（Ti)、銅（Cu)與其組合。 4 6 .如申請專利範圍第4 2項之擴散式型態封裝之結構，其 中該第二導線包括鎳（Ni)、銅（Cu)、金（Au)與其組 合0 47.如申請專利範圍第42項之擴散式型態封裝之結構，更 包括至少一被動元件形成於該絕緣基底之上。
第30頁
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CN1324667C (zh) 2007-07-04
KR20050053476A (ko) 2005-06-08
US20090051025A1 (en) 2009-02-26
US7196408B2 (en) 2007-03-27
US7667318B2 (en) 2010-02-23
US7262081B2 (en) 2007-08-28
US20060091514A1 (en) 2006-05-04
JP2005167191A (ja) 2005-06-23
US20050124093A1 (en) 2005-06-09
DE102004033057A1 (de) 2005-06-30
US20070059866A1 (en) 2007-03-15
KR100824160B1 (ko) 2008-04-21
US20050236696A1 (en) 2005-10-27
TW200520190A (en) 2005-06-16
CN1624888A (zh) 2005-06-08
US20080105967A1 (en) 2008-05-08
US7557437B2 (en) 2009-07-07
SG114665A1 (en) 2005-09-28
US7459781B2 (en) 2008-12-02

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