JP2005332896A - 半導体装置、チップサイズパッケージ、半導体装置の製造方法、及びチップサイズパッケージの製造方法 - Google Patents
半導体装置、チップサイズパッケージ、半導体装置の製造方法、及びチップサイズパッケージの製造方法 Download PDFInfo
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- JP2005332896A JP2005332896A JP2004148496A JP2004148496A JP2005332896A JP 2005332896 A JP2005332896 A JP 2005332896A JP 2004148496 A JP2004148496 A JP 2004148496A JP 2004148496 A JP2004148496 A JP 2004148496A JP 2005332896 A JP2005332896 A JP 2005332896A
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Abstract
【解決手段】第1の素子形成面に複数の第1パッド103を有すると共に第1パッド103を露出するように形成された第1保護膜104とを備える第1半導体チップ101上に第2チップ102がフリップチップ接続され、第1保護膜104上に形成された絶縁膜107は、第2チップ102の側面及び第2の素子形成面上を覆っている。本発明の構造を有することで、樹脂封止時の樹脂流し込みの圧力により、第2チップのズレ等を防止することが出来る。
【選択図】図2
Description
また、特許文献3で講じられた対策では、複雑な工程を要し、精度の高い合わせ技術を要求され、このような要求に対応することが困難である。
101 第1半導体チップ
102 第2チップ
103 第1パッド
104 第1保護膜
105 第2パッド
106 第2保護膜
107 絶縁膜
108、109 導体
110 樹脂
111 外部電極
Claims (18)
- 複数の第1パッドと前記第1パッドを露出する第1保護膜とが形成された第1の素子形成面を持つ第1半導体チップと、
複数の第2パッドと前記第2パッドを露出するように第2保護膜が形成される第2の素子形成面を持つと共に前記第1半導体チップの前記第1の素子形成面と前記第2の素子形成面とが対向するように前記第1半導体チップ上に搭載された第2チップと、
前記第1保護膜上に形成されると共に前記第2チップの側面かつ前記第2の素子形成面を覆うように形成された絶縁膜と、
前記絶縁膜上を覆うように形成された樹脂と、
前記樹脂上に形成された外部電極と前記第1パッドとを接続する第1導体と、
を有することを特徴とする半導体装置。 - 請求項1記載の半導体装置は、さらに、前記第1保護膜と前記絶縁膜との間に形成され、前記第1パッドと前記第2パッドとを電気的に接続する第2の導体を有することを特徴とする。
- 前記第1導体は、前記絶縁膜及び前記樹脂内に形成されていて、メタル配線とポストからなることを特徴とする請求項1記載の半導体装置。
- 請求項1記載の半導体装置は、さらに、前記絶縁膜上に形成される絶縁部材を有し、前記第1導体は、前記絶縁膜上から前記絶縁部材上にかけて形成されていて、前記樹脂は、前記第1導体が露出するように形成されていることを特徴とする。
- 前記絶縁膜は、ポリイミドであることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁膜は、前記第2チップの側面を全て覆っていることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁膜は非感光性ポリイミドであることを特徴とする請求項6に記載の半導体装置。
- 前記絶縁膜は、前記第2チップの前記第2の素子形成面と対向する面をも覆い、また前記第1導体は、前記第2チップ上にも形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第2チップは、複数の受動素子が形成されたチップであることを特徴とする請求項1に記載の半導体装置。
- 前記第1パッドは、前記第1の素子形成面の周辺部である第1領域と、前記第1領域に囲まれた第2領域とに形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第2パッドは、前記第2領域にある前記第1パッドと接続されていることを特徴とする請求項10記載の半導体装置。
- 前記第1半導体チップは、前記第2チップより大きいか等しく、かつ前記半導体装置の外形寸法と実質的に同一であることを特徴とする請求項1に記載の半導体装置。
- 第1半導体チップ上に第2チップをフリップチップ接続したチップサイズパッケージであって、
前記第1半導体チップは、第1の素子形成面の周辺部である第1領域と前記第1領域に囲まれた第2領域とに形成された第1パッドと、前記第1パッドを露出するように形成された第1保護膜とを有し、
前記第2チップは、複数の第2パッドと前記第2パッドを露出する第2の保護膜が形成された第2の素子形成面を有し、
前記第2領域に形成された前記第1パッドと前記第2パッドとは電気的に接続され、
前記第1保護膜上と前記第2チップの側面と前記第2の素子形成面上とを覆うように絶縁膜が形成され、
前記第1パッドと外部電極とを接続する第1導体が、前記絶縁膜上に形成され、
前記絶縁膜、前記第2チップ及び前記第1導体が樹脂により封止されたチップサイズパッケージ。 - 前記第2チップは、複数の受動素子が形成されたチップであることを特徴とする請求項13に記載のチップサイズパッケージ。
- 半導体装置の製造方法であって、
複数の第1パッドと前記第1パッドを露出する第1保護膜とが形成された第1の素子形成面を持つ第1半導体チップを準備する工程と、
複数の第2パッドと前記第2パッドを露出するように第2保護膜とが形成された第2の素子形成面を持つ第2チップを準備し、前記第1及び第2素子形成面が対向するように前記第1半導体チップ上に前記第2チップを搭載する工程と、
前記第1保護膜上、前記第2チップの側面、及び前記第2の素子形成面上を覆うように絶縁膜を形成する工程と、
前記第1パッドから外部電極を接続する第1導体を形成する工程と、
前記第1導体、前記絶縁膜、及び前記第2チップを樹脂で封止する工程とを含む半導体装置の製造方法。 - 前記樹脂を研摩或いはエッチングすることにより前記樹脂から前記第1導体を露出させる工程を含む請求項15に記載の半導体装置の製造方法。
- 前記絶縁膜は、前記第2チップの側面、及び前記第2の素子形成面上を同一工程で形成されることを特徴とする請求項15に記載の半導体装置の製造方法。
- チップサイズパッケージの製造方法であって、
第1の素子形成面に複数の第1パッドを有すると共に前記第1パッドを露出するように形成された第1保護膜とを有する第1半導体チップが形成されたウェハを準備する工程と、
第2の素子形成面に複数の第2パッドを有すると共に前記第2パッドを露出するように形成された第2保護膜とを有する第2チップを準備し、前記第1及び第2素子形成面が対向するように前記ウェハ上の各々の前記第1半導体チップ上に前記第2チップを搭載する工程と、
前記第1保護膜上、前記第2チップの側面、及び前記第2の素子形成面上を覆うように絶縁膜を一括形成する工程と、
前記第1パッドから外部電極を接続する第1導体を形成する工程と、
前記第1導体、前記絶縁膜、及び前記第2チップを樹脂で封止する工程と、
前記樹脂を研摩或いはエッチングすることにより前記樹脂から前記第1導体を露出させる工程と、
前記ウェハを切断して前記第1半導体チップを個片化する工程とを含むチップサイズパッケージの製造方法。
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US11/129,328 US7321163B2 (en) | 2004-05-19 | 2005-05-16 | Semiconductor device including a plurality of circuit element chips and a manufacturing method thereof |
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US7514767B2 (en) | 2003-12-03 | 2009-04-07 | Advanced Chip Engineering Technology Inc. | Fan out type wafer level package structure and method of the same |
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