JPH0834264B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

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Publication number
JPH0834264B2
JPH0834264B2 JP62098014A JP9801487A JPH0834264B2 JP H0834264 B2 JPH0834264 B2 JP H0834264B2 JP 62098014 A JP62098014 A JP 62098014A JP 9801487 A JP9801487 A JP 9801487A JP H0834264 B2 JPH0834264 B2 JP H0834264B2
Authority
JP
Japan
Prior art keywords
wiring
compound semiconductor
recess
semiconductor device
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62098014A
Other languages
English (en)
Other versions
JPS63262857A (ja
Inventor
勝規 西口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62098014A priority Critical patent/JPH0834264B2/ja
Priority to KR1019880004395A priority patent/KR920003595B1/ko
Priority to CA000564487A priority patent/CA1275331C/en
Priority to EP88106396A priority patent/EP0288052A3/en
Publication of JPS63262857A publication Critical patent/JPS63262857A/ja
Priority to US07/649,183 priority patent/US5188984A/en
Publication of JPH0834264B2 publication Critical patent/JPH0834264B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
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  • Pressure Sensors (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はガリウムヒ素等の如く、高速かつ高集積度の
化合物半導体素子を用いる半導体装置に関し、特に高速
度の信号処理に用いられるものである。また、本発明は
このような半導体装置の製造方法に関する。
〔従来の技術〕
高周波帯域、特にGHz帯での高速信号処理に適した半
導体装置として、ガリウムヒ素を用いる半導体装置が多
用されている。
このようなガリウムヒ素半導体装置における従来の実
装形態の例を第２図に示す。
第２図（ａ）は従来のガリウムヒ素半導体装置の一例
の構成を示す断面図である。図示の通り、セラミックス
製のベース１の中央部に形成された凹部２にはガリウム
ヒ素チップ３が載置され、このガリウムヒ素チップ３上
の電極（図示せず。）とベース１の凹部２の周囲に形成
された厚膜印刷配線４とは、金等のボンディングワイヤ
５により接続されている。
ところが、セラミックスの表面は凹凸が多く、高精度
の配線は困難であるため、厚膜印刷配線４は例えば最小
幅100μｍ程度であり、高密度の実装は不可能である。
特に、グランド配線の形成が困難であることからインピ
ーダンス整合を行なえず、配線パターンの自由度が少な
い。
第２図（ｂ）は他の実装形態を示す断面図である。図
示の通り、平坦なセラミックス製のベース11の上面には
薄膜配線12が形成され、中央部に載置されダイボンディ
ングされたガリウムヒ素チップ13との間でワイヤ14によ
り接続がなされている。この場合にも、セラミックスを
用いているため、薄膜配線であっても最小幅10μｍ程度
の配線が可能であるに過ぎず、多層配線も不可能である
ので高密度実装には適していない。
第２図（ｃ）は更に他の従来の実装形態を示す断面図
である。図示の通りこの場合には、表面に薄膜配線層22
を形成したシリコン基板21上の中央部にガリウムヒ素チ
ップ23がダイボンディングされ、これと薄膜配線層22と
の間でワイヤ24により接続がなされている。この場合に
は、シリコン基板を採用したことにより表面の平坦度が
大幅に改善されるため、最小幅３μｍ程度の薄膜配線層
の形成が可能である。
〔発明が解決しようとする問題点〕
しかしながら、これらのいずれの場合にもワイヤを使
用しているため、そのための制約を受け、十分な高密度
化は達成されていない。また、ワイヤは配線容量等を伴
うため、遅延を招きやすく高速動作には適さない。
そこで本発明は、十分な高密度化を達成でき、しかも
高速動作特性にすぐれた半導体装置およびその製造方法
を提供することを目的とする。
〔問題点を解決するための手段〕
本発明に係る半導体装置は、表面に第１の配線を形成
してあるシリコン基板に設けられた凹部に化合物半導体
チップが埋め込まれ、チップとシリコン基板の凹部との
間の空隙上に平坦化手段が形成され、この上に化合物半
導体チップ上の電極と第１の配線とを接続する第２の配
線とを備えたことを特徴とする。
また、本発明に係る半導体装置の製造方法は、エッチ
ストッパとなるイオンを注入したシリコン基板の所定領
域を、エッチストッパが存在する部分までエッチングし
て凹部を形成し、この凹部に化合物半導体チップを収納
し、凹部の周囲壁と化合物半導体チップの側壁間の空隙
部を覆うように絶縁膜を形成してパターニングし、この
パターニングされた樹脂膜の上に化合物半導体チップの
電極とシリコン基板にあらかじめ形成された第１の配線
層とを接続するよう、第２の配線層を形成したことを特
徴とする。
〔作用〕
本発明に係る半導体装置は、以上のように構成される
ので、ワイヤを使用することなく薄膜で精密な配線が行
われるため、より高密度の配線が可能となり、配線容量
の低下等から高速動作が可能となるように作用する。
また、本発明に係る半導体装置の製造方法は、エッチ
ストッパを打ち込んでから凹部形成のためのエッチング
を行い、また基板凹部と化合物半導体チップ間の空隙部
を覆うように絶縁膜を形成し、その上に配線層を形成す
るようにしているので、ワイヤボンディング工程を用い
ることなく上記半導体装置を確実に製造することができ
る。
〔実施例〕
以下、添附図面を参照して、本発明の一実施例を説明
する。なお、図面の説明において同一の要素には同一の
符号を付し、重複する説明を省略する。
第１図は実施例に係る半導体装置と、その製造方法を
示す工程別断面図である。
第１図（ｅ）はダイシング後のチップ50を示してお
り、シリコン基板51の表面下に凹部54が形成され、ここ
にガリウムヒ素チップ55が埋め込まれている。そして、
チップ55の表面はシリコン基板51の表面と同一面をなす
ようになっている。また、このガリウムヒ素チップの表
面と凹部54の周囲の基板51の表面との間には、互いの端
部にまたがるように絶縁膜56が形成されている。また、
この絶縁膜56の上には例えばアルミニウムの配線層57が
形成され、従来の半導体装置のようにワイヤボンディン
グによる配線は存在していない。
この結果、ワイヤボンディングのためのボンティング
パッド等が不要となるので、そのためのスペースが不要
であり、その分だけ多く薄膜配線を形成でき、高密度配
線が可能となっている。また、ワイヤの容量やインダク
タンスに起因する高周波特性の低下を防止できるように
なっている。
次に、このような半導体装置の製造工程を説明する。
まず、結晶方位（100）面の表面に所定のパターンで
配線（図示せず）が形成されているシリコン基板50を準
備する。なお、このシリコン基板50の所定の深さの領域
には、ホウ素イオンを７×1019/cm3の高ドーズ量となる
ようにあらかじめ打ち込んで形成したエッチストッパ層
52が存在している（第１図（ａ）に図示）。次に、シリ
コン基板51の上に例えば二酸化シリコン（SiO2）、窒化
シリコン（SiN）等からなるマスク53をパターニングし
て形成し、エチレンジアミン、ピロカテコール、水の混
合液によるエッチャントを用いて異方性エッチングを行
う。このようにすると、水平面に対して54.7゜の角度を
なす結晶方位（111）の側壁54aを有する凹部54が形成さ
れる（第１図（ｂ）に図示）。この凹部54の深さは約20
0μｍである。
次に、マスク53を除去し、既に回路パターンが形成さ
れた厚さ200μｍのガリウムヒ素チップ55を凹部54の中
に載置し、例えば金−錫共晶合金を用いてダイボンディ
ングする（第１図（ｃ）に図示）。このようにすると、
ガリウムヒ素チップ55の厚さと凹部54の深さが等しいた
め、ガリウムヒ素チップ55の表面とシリコン基板51の表
面とは同一面をなす。
続いて、全面にポリイミド等の絶縁膜56をコーティン
グし、ガリウムヒ素チップ55上の電極および基板51の表
面上の配線が露出するようパターニングを行う（第１図
（ｄ）に図示）。なお、この実施例の場合には、絶縁膜
のコーティングの際に凹部側壁54aとガリウムヒ素チッ
プ55の側壁との間の空隙は、通常は完全には埋められて
いないが、空隙は微小であるのでこれで十分である。し
かし、この空隙を完全に埋めるようにしてもよい。
次に、例えばアルミニウムのスパッタリング等により
全面に配線層を形成し、これをパターニングすることに
より、ガリウムヒ素チップ55上の電極および基板51の表
面上の配設を接続する上層配線層57を形成する。この配
線の幅は10μｍ程度であり、一般の薄膜配線よりも太い
が、ワイヤのような変形は無いため、従来と比べてより
高密度の配線が可能となる。
最後に、全体の上にシリコン窒化膜やシリコン酸化膜
等の絶縁膜（図示せず。）をプラズマCVD法やECRスパッ
タリング法により堆積して保護膜とし、ダイシング装置
のベース（図示せず。）に粘着テープ58を用いて固着す
る。そして、ダイシングブレードによりダイシングを行
って個々のチップ50に分割する（第１図（ｅ）に図
示）。このようにして得られたチップは、例えば錫−銀
共晶合金を用いてパッケージのベースにダイボンディン
グされ、パッケージが形成される。
本発明は上記実施例に限定されるものではなく、種々
の変形が可能である。
例えば、凹部形成のためのエッチングとしてエチレン
ジアミン系のエッチャントを用いているが、ヒドラジン
系のエッチャントでもよい。そして、このエッチャント
の種類に応じてマスクの材料を変更すればよい。
また、平坦化を行う層としてはポリイミド層に限るこ
となく、耐熱性と絶縁性にすぐれた材料であればいかな
るものでも使用することができる。また、配線層の材料
もアルミニウムに限られるものではなく、種々の導電材
料を用いることができる。
さらに、シリコン板の表面を結晶方位（110）面とす
れば、90度の側壁の孔部をエッチングにより形成するこ
とができる。
〔発明の効果〕
以上、詳細に説明した通り、本発明に係る半導体装置
によれば、シリコン基板に形成された凹部中に化合物半
導体チップが載置され、薄膜配線で化合物半導体チップ
とシリコン基板上の配線が接続されているので、ワイヤ
ボンディングにおいて避けられない配線容量に伴う信号
遅延を防止することができるとともに、配線領域を拡大
することができるという効果がある。
また、本発明に係る半導体装置の製造方法によれば、
ワイヤボンディングが不要であるので、工程の短縮化を
図ることができるという効果がある。
【図面の簡単な説明】
第１図は本発明に係る半導体装置およびその製造方法を
示す工程別素子断面図、第２図は従来のガリウムヒ素半
導体装置の構成を示す素子断面図である。 1,11……セラミック基板、21,51……シリコン基板、3,1
3,23,55……ガリウムヒ素チップ、52……エッチストッ
パ層、53……マスク、54……凹部、56……絶縁膜、57…
…上層配線層。

Claims (7)

    【特許請求の範囲】
  1. 【請求項１】表面に第１の配線を形成してあるシリコン
    基板に設けられた凹部に埋め込まれた化合物半導体チッ
    プと、 この化合物半導体チップと前記シリコン基板の凹部との
    間の空隙上に形成された平坦化手段と、 この平坦化手段の上に形成され、前記化合物半導体チッ
    プ上の電極と前記シリコン基板上の第１の配線とを接続
    する第２の配線と を備える半導体装置。
  2. 【請求項２】前記化合物半導体チップの表面と前記シリ
    コン基板の表面とが、ほぼ同一平面をなすことを特徴と
    する特許請求の範囲第１項記載の半導体装置。
  3. 【請求項３】前記平坦化手段が、コーティングされたポ
    リイミド膜である特許請求の範囲第１項または第２項の
    いずれかに記載の半導体装置。
  4. 【請求項４】前記化合物半導体がガリウムヒ素である特
    許請求の範囲第１項ないし第３項のいずれかに記載の半
    導体装置。
  5. 【請求項５】エッチストッパとなるイオンを所定の深さ
    の領域に注入したシリコン基板の所定領域を、前記エッ
    チストッパが存在する部分までエッチングして凹部を形
    成する工程と、 前記凹部に化合物半導体チップを収納する工程と、 前記凹部の周囲の壁と前記化合物半導体チップの側壁の
    間の空隙部を覆うように絶縁膜を形成してパターニング
    する工程と、 このパターニングされた絶縁膜の上に前記化合物半導体
    チップの電極と前記シリコン基板上にあらかじめ形成さ
    れた第１の配線層とを接続するように第２の配線層を形
    成する工程と を備える半導体装置の製造方法。
  6. 【請求項６】前記絶縁膜がポリイミドである特許請求の
    範囲第５項記載の半導体装置の製造方法。
  7. 【請求項７】前記凹部を形成するためのエッチングがエ
    チレンジアミン系のエッチャントを用いるものである特
    許請求の範囲第５項記載の半導体装置の製造方法。
JP62098014A 1987-04-21 1987-04-21 半導体装置およびその製造方法 Expired - Fee Related JPH0834264B2 (ja)

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JP62098014A JPH0834264B2 (ja) 1987-04-21 1987-04-21 半導体装置およびその製造方法
KR1019880004395A KR920003595B1 (ko) 1987-04-21 1988-04-18 반도체장치 및 그 제조방법
CA000564487A CA1275331C (en) 1987-04-21 1988-04-19 Recessed semiconductor device
EP88106396A EP0288052A3 (en) 1987-04-21 1988-04-21 Semiconductor device comprising a substrate, and production method thereof
US07/649,183 US5188984A (en) 1987-04-21 1991-02-04 Semiconductor device and production method thereof

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Application Number Priority Date Filing Date Title
JP62098014A JPH0834264B2 (ja) 1987-04-21 1987-04-21 半導体装置およびその製造方法

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Publication Number Publication Date
JPS63262857A JPS63262857A (ja) 1988-10-31
JPH0834264B2 true JPH0834264B2 (ja) 1996-03-29

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US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
JPS57207356A (en) * 1981-06-15 1982-12-20 Fujitsu Ltd Semiconductor device
US4453305A (en) * 1981-07-31 1984-06-12 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a MISFET
US4483067A (en) * 1981-09-11 1984-11-20 U.S. Philips Corporation Method of manufacturing an identification card and an identification manufactured, for example, by this method
JPS5896760A (ja) * 1981-12-04 1983-06-08 Clarion Co Ltd 半導体装置の製法
JPS58143556A (ja) * 1982-02-22 1983-08-26 Fujitsu Ltd 高密度集積回路用パツケ−ジ
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JPS59193051A (ja) * 1983-04-15 1984-11-01 Hitachi Ltd 樹脂封止半導体装置の製造方法
US4566935A (en) * 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method

Also Published As

Publication number Publication date
EP0288052A3 (en) 1989-08-23
US5188984A (en) 1993-02-23
EP0288052A2 (en) 1988-10-26
KR880013254A (ko) 1988-11-30
CA1275331C (en) 1990-10-16
JPS63262857A (ja) 1988-10-31
KR920003595B1 (ko) 1992-05-04

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