US6975296B1
(en)
*
|
1991-06-14 |
2005-12-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Electro-optical device and method of driving the same
|
CN100483651C
(zh)
*
|
1992-08-27 |
2009-04-29 |
株式会社半导体能源研究所 |
半导体器件的制造方法
|
TW226478B
(en)
*
|
1992-12-04 |
1994-07-11 |
Semiconductor Energy Res Co Ltd |
Semiconductor device and method for manufacturing the same
|
US6323071B1
(en)
|
1992-12-04 |
2001-11-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming a semiconductor device
|
US5403762A
(en)
|
1993-06-30 |
1995-04-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of fabricating a TFT
|
JP3562588B2
(ja)
*
|
1993-02-15 |
2004-09-08 |
株式会社半導体エネルギー研究所 |
半導体装置の製造方法
|
US5985741A
(en)
*
|
1993-02-15 |
1999-11-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of fabricating the same
|
EP0612102B1
(en)
*
|
1993-02-15 |
2001-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Process for the fabrication of a crystallised semiconductor layer
|
JP3662263B2
(ja)
*
|
1993-02-15 |
2005-06-22 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6997985B1
(en)
|
1993-02-15 |
2006-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
|
TW241377B
(US20020125480A1-20020912-P00900.png)
|
1993-03-12 |
1995-02-21 |
Semiconductor Energy Res Co Ltd |
|
US6413805B1
(en)
|
1993-03-12 |
2002-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device forming method
|
US5501989A
(en)
*
|
1993-03-22 |
1996-03-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
|
JP3535205B2
(ja)
*
|
1993-03-22 |
2004-06-07 |
株式会社半導体エネルギー研究所 |
薄膜トランジスタの作製方法
|
KR100355938B1
(ko)
*
|
1993-05-26 |
2002-12-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치제작방법
|
KR100186886B1
(ko)
*
|
1993-05-26 |
1999-04-15 |
야마자끼 승페이 |
반도체장치 제작방법
|
US6090646A
(en)
|
1993-05-26 |
2000-07-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for producing semiconductor device
|
US5818076A
(en)
|
1993-05-26 |
1998-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
US5488000A
(en)
|
1993-06-22 |
1996-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
|
US6713330B1
(en)
|
1993-06-22 |
2004-03-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of fabricating a thin film transistor
|
US5529937A
(en)
*
|
1993-07-27 |
1996-06-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Process for fabricating thin film transistor
|
US5663077A
(en)
|
1993-07-27 |
1997-09-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
|
JP2814049B2
(ja)
|
1993-08-27 |
1998-10-22 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
KR100333153B1
(ko)
*
|
1993-09-07 |
2002-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치제작방법
|
JPH07109573A
(ja)
*
|
1993-10-12 |
1995-04-25 |
Semiconductor Energy Lab Co Ltd |
ガラス基板および加熱処理方法
|
TW264575B
(US20020125480A1-20020912-P00900.png)
*
|
1993-10-29 |
1995-12-01 |
Handotai Energy Kenkyusho Kk |
|
CN1156918C
(zh)
*
|
1993-12-02 |
2004-07-07 |
株式会社半导体能源研究所 |
半导体器件
|
US5654203A
(en)
*
|
1993-12-02 |
1997-08-05 |
Semiconductor Energy Laboratory, Co., Ltd. |
Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
|
US6798023B1
(en)
*
|
1993-12-02 |
2004-09-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
|
US5869362A
(en)
*
|
1993-12-02 |
1999-02-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
TW272319B
(US20020125480A1-20020912-P00900.png)
*
|
1993-12-20 |
1996-03-11 |
Sharp Kk |
|
KR100319332B1
(ko)
*
|
1993-12-22 |
2002-04-22 |
야마자끼 순페이 |
반도체장치및전자광학장치
|
JP3221473B2
(ja)
|
1994-02-03 |
2001-10-22 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR100279217B1
(ko)
*
|
1994-04-13 |
2001-02-01 |
야마자끼 순페이 |
반도체 장치 형성 방법, 결정성 반도체 막 형성 방법, 박막 트랜지스터 형성 방법 및 반도체 장치 제조 방법
|
US6974763B1
(en)
|
1994-04-13 |
2005-12-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber
|
US6326248B1
(en)
*
|
1994-06-02 |
2001-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Process for fabricating semiconductor device
|
JP3621151B2
(ja)
*
|
1994-06-02 |
2005-02-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR100327086B1
(ko)
*
|
1994-06-15 |
2002-03-06 |
구사마 사부로 |
박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
|
JP3067949B2
(ja)
*
|
1994-06-15 |
2000-07-24 |
シャープ株式会社 |
電子装置および液晶表示装置
|
TW273639B
(en)
*
|
1994-07-01 |
1996-04-01 |
Handotai Energy Kenkyusho Kk |
Method for producing semiconductor device
|
JPH0869967A
(ja)
*
|
1994-08-26 |
1996-03-12 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
TW403993B
(en)
*
|
1994-08-29 |
2000-09-01 |
Semiconductor Energy Lab |
Semiconductor circuit for electro-optical device and method of manufacturing the same
|
JP3442500B2
(ja)
|
1994-08-31 |
2003-09-02 |
株式会社半導体エネルギー研究所 |
半導体回路の作製方法
|
US6706572B1
(en)
*
|
1994-08-31 |
2004-03-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a thin film transistor using a high pressure oxidation step
|
US6670640B1
(en)
*
|
1994-09-15 |
2003-12-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for producing semiconductor device
|
TW374247B
(en)
*
|
1994-09-15 |
1999-11-11 |
Semiconductor Energy Lab Co Ltd |
Method of fabricating semiconductor device
|
US6242289B1
(en)
|
1995-09-08 |
2001-06-05 |
Semiconductor Energy Laboratories Co., Ltd. |
Method for producing semiconductor device
|
US5712191A
(en)
*
|
1994-09-16 |
1998-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for producing semiconductor device
|
US5915174A
(en)
*
|
1994-09-30 |
1999-06-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for producing the same
|
US6300659B1
(en)
|
1994-09-30 |
2001-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin-film transistor and fabrication method for same
|
US5942768A
(en)
|
1994-10-07 |
1999-08-24 |
Semionductor Energy Laboratory Co., Ltd. |
Semiconductor device having improved crystal orientation
|
JP3469337B2
(ja)
*
|
1994-12-16 |
2003-11-25 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6337229B1
(en)
|
1994-12-16 |
2002-01-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of making crystal silicon semiconductor and thin film transistor
|
JP4130237B2
(ja)
*
|
1995-01-28 |
2008-08-06 |
株式会社半導体エネルギー研究所 |
結晶性珪素膜の作製方法及び半導体装置の作製方法
|
US7348227B1
(en)
*
|
1995-03-23 |
2008-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR100265179B1
(ko)
*
|
1995-03-27 |
2000-09-15 |
야마자끼 순페이 |
반도체장치와 그의 제작방법
|
US6933182B1
(en)
*
|
1995-04-20 |
2005-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device and manufacturing system thereof
|
TW383502B
(en)
|
1995-06-01 |
2000-03-01 |
Seniconductor Energy Lab Kk |
Method of manufacturing semiconductor device
|
JP4056571B2
(ja)
|
1995-08-02 |
2008-03-05 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3295679B2
(ja)
*
|
1995-08-04 |
2002-06-24 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6444506B1
(en)
*
|
1995-10-25 |
2002-09-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
|
US6800875B1
(en)
|
1995-11-17 |
2004-10-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Active matrix electro-luminescent display device with an organic leveling layer
|
JPH09146108A
(ja)
|
1995-11-17 |
1997-06-06 |
Semiconductor Energy Lab Co Ltd |
液晶表示装置およびその駆動方法
|
TW439003B
(en)
*
|
1995-11-17 |
2001-06-07 |
Semiconductor Energy Lab |
Display device
|
JP3907726B2
(ja)
|
1995-12-09 |
2007-04-18 |
株式会社半導体エネルギー研究所 |
微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法
|
JP3124480B2
(ja)
*
|
1995-12-12 |
2001-01-15 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TW309633B
(US20020125480A1-20020912-P00900.png)
|
1995-12-14 |
1997-07-01 |
Handotai Energy Kenkyusho Kk |
|
TW319912B
(US20020125480A1-20020912-P00900.png)
*
|
1995-12-15 |
1997-11-11 |
Handotai Energy Kenkyusho Kk |
|
US6204101B1
(en)
|
1995-12-15 |
2001-03-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
JP3645378B2
(ja)
*
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US5985740A
(en)
*
|
1996-01-19 |
1999-11-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device including reduction of a catalyst
|
JP3645379B2
(ja)
*
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3729955B2
(ja)
*
|
1996-01-19 |
2005-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3645380B2
(ja)
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
|
US6478263B1
(en)
*
|
1997-01-17 |
2002-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and its manufacturing method
|
US5888858A
(en)
*
|
1996-01-20 |
1999-03-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and fabrication method thereof
|
US7056381B1
(en)
|
1996-01-26 |
2006-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Fabrication method of semiconductor device
|
US6180439B1
(en)
*
|
1996-01-26 |
2001-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating a semiconductor device
|
US6465287B1
(en)
|
1996-01-27 |
2002-10-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
|
US6063654A
(en)
*
|
1996-02-20 |
2000-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a thin film transistor involving laser treatment
|
TW374196B
(en)
|
1996-02-23 |
1999-11-11 |
Semiconductor Energy Lab Co Ltd |
Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
|
TW335503B
(en)
*
|
1996-02-23 |
1998-07-01 |
Semiconductor Energy Lab Kk |
Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
|
TW317643B
(US20020125480A1-20020912-P00900.png)
|
1996-02-23 |
1997-10-11 |
Handotai Energy Kenkyusho Kk |
|
JP3472024B2
(ja)
|
1996-02-26 |
2003-12-02 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6100562A
(en)
*
|
1996-03-17 |
2000-08-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device
|
US5602047A
(en)
*
|
1996-06-13 |
1997-02-11 |
Industrial Technology Research Institute |
Process for polysilicon thin film transistors using backside irradiation and plasma doping
|
US6133119A
(en)
*
|
1996-07-08 |
2000-10-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and method manufacturing same
|
US6188452B1
(en)
*
|
1996-07-09 |
2001-02-13 |
Lg Electronics, Inc |
Active matrix liquid crystal display and method of manufacturing same
|
US5773329A
(en)
*
|
1996-07-24 |
1998-06-30 |
International Business Machines Corporation |
Polysilicon grown by pulsed rapid thermal annealing
|
JPH10199807A
(ja)
|
1996-12-27 |
1998-07-31 |
Semiconductor Energy Lab Co Ltd |
結晶性珪素膜の作製方法
|
JPH10200114A
(ja)
*
|
1996-12-30 |
1998-07-31 |
Semiconductor Energy Lab Co Ltd |
薄膜回路
|
US6764928B1
(en)
*
|
1997-02-20 |
2004-07-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing an El display device
|
JP4242461B2
(ja)
|
1997-02-24 |
2009-03-25 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3544280B2
(ja)
|
1997-03-27 |
2004-07-21 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JPH10282414A
(ja)
*
|
1997-04-09 |
1998-10-23 |
Canon Inc |
ズームレンズ
|
US6541793B2
(en)
|
1997-05-30 |
2003-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin-film transistor and semiconductor device using thin-film transistors
|
JP3376247B2
(ja)
*
|
1997-05-30 |
2003-02-10 |
株式会社半導体エネルギー研究所 |
薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
|
US6307214B1
(en)
|
1997-06-06 |
2001-10-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor thin film and semiconductor device
|
JP3844561B2
(ja)
|
1997-06-10 |
2006-11-15 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6501094B1
(en)
|
1997-06-11 |
2002-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a bottom gate type thin film transistor
|
JP3717634B2
(ja)
*
|
1997-06-17 |
2005-11-16 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3830623B2
(ja)
*
|
1997-07-14 |
2006-10-04 |
株式会社半導体エネルギー研究所 |
結晶性半導体膜の作製方法
|
JP3295346B2
(ja)
|
1997-07-14 |
2002-06-24 |
株式会社半導体エネルギー研究所 |
結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ
|
US5940693A
(en)
|
1997-07-15 |
1999-08-17 |
Sharp Laboratories Of America, Inc. |
Selective silicide thin-film transistor and method for same
|
US6326226B1
(en)
|
1997-07-15 |
2001-12-04 |
Lg. Philips Lcd Co., Ltd. |
Method of crystallizing an amorphous film
|
JP3754184B2
(ja)
|
1997-07-16 |
2006-03-08 |
株式会社半導体エネルギー研究所 |
薄膜トランジスタを備えたフラットパネルディスプレイの作製方法
|
JP3939399B2
(ja)
|
1997-07-22 |
2007-07-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JPH1140498A
(ja)
|
1997-07-22 |
1999-02-12 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
JP4318768B2
(ja)
*
|
1997-07-23 |
2009-08-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP4180689B2
(ja)
*
|
1997-07-24 |
2008-11-12 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US5950078A
(en)
*
|
1997-09-19 |
1999-09-07 |
Sharp Laboratories Of America, Inc. |
Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
|
KR100269312B1
(ko)
*
|
1997-10-14 |
2000-10-16 |
윤종용 |
실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법
|
KR100340124B1
(ko)
|
1998-02-10 |
2003-01-29 |
주승기 |
박막트랜지스터 제조방법
|
US6060392A
(en)
*
|
1998-02-11 |
2000-05-09 |
National Semiconductor Corporation |
Fabrication of silicides by excimer laser annealing of amorphous silicon
|
US6312979B1
(en)
|
1998-04-28 |
2001-11-06 |
Lg.Philips Lcd Co., Ltd. |
Method of crystallizing an amorphous silicon layer
|
US6228693B1
(en)
*
|
1998-06-05 |
2001-05-08 |
Sharp Laboratories Of America, Inc. |
Selected site, metal-induced, continuous crystallization method
|
US6524662B2
(en)
|
1998-07-10 |
2003-02-25 |
Jin Jang |
Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
|
JP2000058839A
(ja)
|
1998-08-05 |
2000-02-25 |
Semiconductor Energy Lab Co Ltd |
半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
|
US6784034B1
(en)
|
1998-10-13 |
2004-08-31 |
Lg. Philips Lcd Co., Ltd. |
Method for fabricating a thin film transistor
|
US6558986B1
(en)
|
1998-09-03 |
2003-05-06 |
Lg.Philips Lcd Co., Ltd |
Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method
|
JP2000174282A
(ja)
*
|
1998-12-03 |
2000-06-23 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
US6475836B1
(en)
*
|
1999-03-29 |
2002-11-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR100317641B1
(ko)
|
1999-05-21 |
2001-12-22 |
구본준, 론 위라하디락사 |
박막 트랜지스터 및 그 제조방법
|
US7339996B2
(en)
|
1999-06-24 |
2008-03-04 |
Intel Corporation |
Receiver codec super set constellation generator
|
JP3579316B2
(ja)
*
|
1999-10-19 |
2004-10-20 |
三洋電機株式会社 |
半導体装置の製造方法
|
US7098084B2
(en)
|
2000-03-08 |
2006-08-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US6432804B1
(en)
*
|
2000-05-22 |
2002-08-13 |
Sharp Laboratories Of America, Inc. |
Sputtered silicon target for fabrication of polysilicon thin film transistors
|
KR100439345B1
(ko)
*
|
2000-10-31 |
2004-07-07 |
피티플러스(주) |
폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법
|
KR100390522B1
(ko)
|
2000-12-01 |
2003-07-07 |
피티플러스(주) |
결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법
|
US7045444B2
(en)
*
|
2000-12-19 |
2006-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device that includes selectively adding a noble gas element
|
US7015422B2
(en)
|
2000-12-21 |
2006-03-21 |
Mattson Technology, Inc. |
System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
|
US6858480B2
(en)
|
2001-01-18 |
2005-02-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
TWI221645B
(en)
*
|
2001-01-19 |
2004-10-01 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
US7151017B2
(en)
*
|
2001-01-26 |
2006-12-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
US7115453B2
(en)
*
|
2001-01-29 |
2006-10-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
US6770518B2
(en)
*
|
2001-01-29 |
2004-08-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
|
JP2002231627A
(ja)
*
|
2001-01-30 |
2002-08-16 |
Semiconductor Energy Lab Co Ltd |
光電変換装置の作製方法
|
US7141822B2
(en)
*
|
2001-02-09 |
2006-11-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP4993810B2
(ja)
|
2001-02-16 |
2012-08-08 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5088993B2
(ja)
*
|
2001-02-16 |
2012-12-05 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
SG114529A1
(en)
*
|
2001-02-23 |
2005-09-28 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
SG114530A1
(en)
*
|
2001-02-28 |
2005-09-28 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
US6830994B2
(en)
*
|
2001-03-09 |
2004-12-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device having a crystallized semiconductor film
|
JP4718700B2
(ja)
|
2001-03-16 |
2011-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US7052943B2
(en)
|
2001-03-16 |
2006-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device
|
US6812081B2
(en)
*
|
2001-03-26 |
2004-11-02 |
Semiconductor Energy Laboratory Co.,.Ltd. |
Method of manufacturing semiconductor device
|
US7050878B2
(en)
|
2001-11-22 |
2006-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductror fabricating apparatus
|
JP2003163221A
(ja)
*
|
2001-11-28 |
2003-06-06 |
Semiconductor Energy Lab Co Ltd |
半導体装置の作製方法
|
US7133737B2
(en)
*
|
2001-11-30 |
2006-11-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
|
CN1248287C
(zh)
*
|
2001-11-30 |
2006-03-29 |
株式会社半导体能源研究所 |
半导体设备的制造方法
|
US7214573B2
(en)
*
|
2001-12-11 |
2007-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device that includes patterning sub-islands
|
KR100477102B1
(ko)
*
|
2001-12-19 |
2005-03-17 |
삼성에스디아이 주식회사 |
금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
|
KR100477103B1
(ko)
*
|
2001-12-19 |
2005-03-18 |
삼성에스디아이 주식회사 |
금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
|
JP3992976B2
(ja)
|
2001-12-21 |
2007-10-17 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP4030758B2
(ja)
*
|
2001-12-28 |
2008-01-09 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US7374976B2
(en)
*
|
2002-11-22 |
2008-05-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating thin film transistor
|
JP4059095B2
(ja)
*
|
2003-02-07 |
2008-03-12 |
セイコーエプソン株式会社 |
相補型薄膜トランジスタ回路、電気光学装置、電子機器
|
KR100947525B1
(ko)
*
|
2003-03-12 |
2010-03-12 |
삼성전자주식회사 |
액정 표시 장치용 박막 트랜지스터 기판 및 이의 제조방법
|
US7348222B2
(en)
*
|
2003-06-30 |
2008-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
|
US7247527B2
(en)
*
|
2003-07-31 |
2007-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device, and laser irradiation apparatus
|
US7358165B2
(en)
*
|
2003-07-31 |
2008-04-15 |
Semiconductor Energy Laboratory Co., Ltd |
Semiconductor device and method for manufacturing semiconductor device
|
WO2005059971A2
(en)
*
|
2003-12-15 |
2005-06-30 |
Koninklijke Philips Electronics N.V. |
Active matrix pixel device with photo sensor
|
US6897118B1
(en)
|
2004-02-11 |
2005-05-24 |
Chartered Semiconductor Manufacturing Ltd. |
Method of multiple pulse laser annealing to activate ultra-shallow junctions
|
KR101132266B1
(ko)
*
|
2004-03-26 |
2012-04-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제조 방법
|
KR20050106256A
(ko)
*
|
2004-05-04 |
2005-11-09 |
네오폴리((주)) |
금속유도측면결정화를 이용한 박막 트랜지스터의 제조방법
|
US7709580B2
(en)
*
|
2004-08-20 |
2010-05-04 |
Chevron Oronite Company Llc |
Method for preparation of polylefins containing exo-olefin chain ends
|
AU2005276998B2
(en)
*
|
2004-08-20 |
2011-08-11 |
Chevron Oronite Company Llc |
Method for preparation of polyolefins containing exo-olefin chain ends
|
US7705090B2
(en)
*
|
2004-08-20 |
2010-04-27 |
Chevron Oronite Company Llc |
Method for preparing polyolefins containing a high percentage of exo-olefin chain ends
|
US7381600B2
(en)
*
|
2004-12-02 |
2008-06-03 |
The Hong Kong University Of Science And Technology |
Method of annealing polycrystalline silicon using solid-state laser and devices built thereon
|
KR100653853B1
(ko)
*
|
2005-05-24 |
2006-12-05 |
네오폴리((주)) |
비금속 씨드 에피 성장을 이용한 비정질 반도체 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법
|
US7279426B2
(en)
*
|
2005-09-22 |
2007-10-09 |
International Business Machines Corporation |
Like integrated circuit devices with different depth
|
CN1975989B
(zh)
*
|
2005-12-01 |
2010-09-29 |
香港科技大学 |
多晶硅薄膜的制备方法,用该方法制备的多晶硅和薄膜晶体管
|
US7816459B2
(en)
*
|
2005-12-30 |
2010-10-19 |
Chevron Oronite Company Llc |
Method for preparing polyolefins containing vinylidine end groups using polymeric nitrogen compounds
|
US8013073B2
(en)
*
|
2005-12-30 |
2011-09-06 |
Chevron Oronite Company Llc |
Method for preparing polyolefins containing vinylidine end groups using nonaromatic heterocyclic compounds
|
US7501476B2
(en)
*
|
2005-12-30 |
2009-03-10 |
Chevron Oronite Company, Llc |
Method for preparing polyolefins containing vinylidene end groups using azole compounds
|
KR20080065460A
(ko)
*
|
2007-01-09 |
2008-07-14 |
엘지전자 주식회사 |
수평 금속 유도 결정화를 이용한 저온 다결정 실리콘광기전력 변환소자의 제조방법
|
US7754600B2
(en)
*
|
2007-03-01 |
2010-07-13 |
Hewlett-Packard Development Company, L.P. |
Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
|
TWI348770B
(en)
*
|
2007-09-28 |
2011-09-11 |
Au Optronics Corp |
Light sensor
|
US8394897B2
(en)
*
|
2008-03-25 |
2013-03-12 |
Chevron Oronite Company Llc |
Production of vinylidene-terminated polyolefins via quenching with monosulfides
|
WO2009144915A1
(ja)
*
|
2008-05-29 |
2009-12-03 |
シャープ株式会社 |
半導体装置およびその製造方法
|
US8063154B2
(en)
|
2008-06-24 |
2011-11-22 |
The University Of Southern Mississippi |
Preparation of exo-olefin terminated polyolefins via quenching with alkoxysilanes or ethers
|
US8133954B2
(en)
|
2008-10-22 |
2012-03-13 |
Chevron Oronite Company Llc |
Production of vinylidene-terminated and sulfide-terminated telechelic polyolefins via quenching with disulfides
|
US7888224B2
(en)
*
|
2008-11-14 |
2011-02-15 |
Nanyang Technological University |
Method for forming a shallow junction region using defect engineering and laser annealing
|
US8344073B2
(en)
|
2009-01-16 |
2013-01-01 |
The University Of Southern Mississippi |
Functionalization of polyolefins with phenoxy derivatives
|
US8592527B2
(en)
|
2010-06-14 |
2013-11-26 |
University Of Southern Mississippi |
Vinyl ether end-functionalized polyolefins
|
CN102610519A
(zh)
*
|
2011-01-19 |
2012-07-25 |
广东中显科技有限公司 |
多晶硅薄膜晶体管的制造方法
|
TW201245829A
(en)
*
|
2011-05-05 |
2012-11-16 |
Au Optronics Corp |
Pixel structure and method for fabricating the same
|
WO2018111247A1
(en)
*
|
2016-12-13 |
2018-06-21 |
Intel Corporation |
Passivation dielectrics for oxide semiconductor thin film transistors
|
KR101959754B1
(ko)
*
|
2018-02-27 |
2019-03-19 |
한국과학기술원 |
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|
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(zh)
*
|
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2019-05-07 |
惠科股份有限公司 |
一种薄膜晶体管的制作方法和显示面板
|
US11616057B2
(en)
|
2019-03-27 |
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IC including back-end-of-line (BEOL) transistors with crystalline channel material
|
JP7341052B2
(ja)
*
|
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2023-09-08 |
東京エレクトロン株式会社 |
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|