TW201033739A - Spin-on spacer materials for double-and triple-patterning lithography - Google Patents

Spin-on spacer materials for double-and triple-patterning lithography Download PDF

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TW201033739A
TW201033739A TW099100242A TW99100242A TW201033739A TW 201033739 A TW201033739 A TW 201033739A TW 099100242 A TW099100242 A TW 099100242A TW 99100242 A TW99100242 A TW 99100242A TW 201033739 A TW201033739 A TW 201033739A
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composition
layer
feature
group
patterned surface
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Qian Lin
Rama Puligadda
James Claypool
Douglas J Guerrero
Brian Smith
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Brewer Science Inc
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • C—CHEMISTRY; METALLURGY
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

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201033739 六、發明說明： 【相關申請案】 本申請案主張2009年1月7曰申請之標題為用於雙重 圖案化微影術之旋塗間隔材料（SPIN-ON SPACER MATERIALS FOR DOUBLE-PATTERNING LITHOGRAPHY) 之臨時申請案第61/143,013號的優先權，該臨時申請案以 引用之方式併入本文中。 【發明所屬之技術領域】 本發明大體而言係關於一種新穎的多重圖案化方法， 該方法利用可收縮組成物形成間隔結構。 【先前技術】 由於在開發下一代193 nm浸潰技術及超紫外線微影術 (extreme ultraviolet lithography’ EUVL)方面之延遲，使 用現行工具進行雙重囷案化為計劃自2008年至2012年用 於32 nm及22 nm半間距（half-pitch )節點的唯一微影技 術。自對準間隔件技術（Self-aligned spacer technology )為 一種在廣泛研究中之雙重圖案化技術。間隔件方法之優點 在於僅需要一次微影曝露，從而避免連續曝露之間發生重 疊的嚴重問題◊藉由在預先圖案化之特徵上沈積塗層，隨 後蝕刻以移除膜之存在於水平表面上之部分，留下僅鑲襯 側壁之間隔件膜層，形成間隔件。隨後移除原始圖案化特 徵，僅留下間隔件。因為每線形成兩個間隔件，所以線密 度（line density )加倍。因此，可製’造32 nm或更小的密集 201033739 線（dense line )。 先别已嘗试使用基於利用化學氣相沈積（chemical vapor deposition，CVD )法塗覆之膜的間隔件技術。該方法 包括數個CVD步驟以在光阻劑（photoresist )下製備各層 然後進行光微影術。光微影術之後’使用數個触刻步驟打 開下層（underlayer)以製備模板。模板製備後，使用CVD 塗覆保形塗層（conformal coating )，該塗層可進一步經钱 刻形成間隔件。需要如此多的步驟使得該方法成本高且效 〇 率低。此外’各層堆集導致不能控制臨界尺寸（critical dimension，CD )。 已進行其他嘗試以利用材料及稱為化學收縮辅助之解 析度增強微影術（resolution enhancement lithography assisted by chemical shrink，RELACS)的方法來使小特徵 • 之出現率或間距加倍。RELACS方法係基於自抗蝕劑 (resist )向外擴散之酸誘導之交聯反應，且包括四個步驟： 紅塗，全面曝露（blanket exposure);烘烤；及顯影。該技 ® 術主要應用於使接觸孔收縮，收縮係視抗蝕劑誘導之化學 相互作用而定。該方法不適用於形成小型線，而是僅適用 於使由KrF ( 248 nm )技術製造之大型（> ! 〇〇 nm )線之出 現率加倍，因為KrF RELACS方法在相對溫和之條件 120 C )下進行。然而，32 nm線之製造係基於ArF〇93 技術。ArF抗蝕劑中酸之遷移率極低，且ArF relacs方法 需要阿烘烤溫度（> i 2〇。〇)，而此溫度會使原始抗蝕線變 形。因此’該方法無任何實際應用之潛力。 201033739 【發明内容】 本發明藉由提供-種形成微電子結構之方法解決先前 技術之問題。該方法包含提供具有圖案化表面的前驅結 構。圖案化表面包括至少-個具有側壁及上表面之凸起特 徵（raised feature)。在該圖案化表面上塗覆可收縮之組成 物以使之覆蓋特徵之側壁及上表面。加熱可收縮之組成物 以在圖案化表面上及在凸起特徵上方形成該組成物保形 層。移除至少部分保形層以得到包含凸起特徵及緊貼凸起 特徵侧壁之保形層殘留物的前間隔件結構（㈣啊… structure ) 〇 【實施方式】 本發明方法 本發明提供一種新穎的基於塗層收縮之兩步法。 圖1說明本發明之一個具體實例，其中圖1(a)描繪圖案 化前驅結構10。結構10包括第一層12，該層具有上表面 以及背面12be應瞭解，圖i中說明之具體實例為特定微 電子過程之「快照（snapsh〇t)」。亦即，圖i中描述之步驟 可在方法開始時，如此快照描繪所製造之「堆疊。以仏）」 之第一層。或者’該等步驟可在正製造之堆疊令間或為^ 法之最後步驟，如此快照顯示某些參與構建堆疊之最後階 段因此，背面Ub可具有若干與之鄰接的層或基板13, 包括習用微電子基板’諸如選自由以下組成之群的基板： 珍、SiGe、Si〇2、Si3N4、銘、鶴、發化鶴、坤化嫁錯' 鈕、氮化鈕、珊瑚、黑金剛石、磷或硼摻雜玻璃及上述之 201033739 混合物。 第一層12較佳為旋塗碳層（rs〇c」）或非晶形碳層， 且其可根據任何先前技術方法（典型地包括旋塗）塗覆及 形成。基於將組成物中所有固體之總原子數視為1〇〇%，旋 塗碳層較佳應包含至少約8〇%之碳原子，且甚至更佳約8〇% 至約95%之碳原子。基於組成物中所包括之固體之化學結 構，一般熟習此項技術者可容易地計算該百分比。第一層 12之厚度典型地應為約50 nm至約1〇〇〇 nm，且較佳為約 100 nm 至約 300 nm。 結構10進一步包括與上表面12a鄰接之第二層14。第 —層14包括上表面14a，且可利用任何已知塗覆法塗覆且 根據已知條件加工。雖然第二層14較佳為硬遮罩層，但其 亦可為底部有機抗反射塗層。形成第二層14之組成物可利 用任何已知塗覆法塗覆，其中-種較佳方法為以約1〇〇〇 Pm m，GGG rpm (較佳約丨，· ρριη至約2 5⑽rpm)之 ⑩速度旋塗組成物約10秒至約6〇秒（較佳約2〇秒至約6〇 秒）之時間。隨後烘烤經成物以誘導熱交聯"he— ⑽sshnking )。較佳烘烤條件包括溫度為至少約⑽。c，較 佳為約12(TC至約25〇t，且p 且更佳為約1 60 C至約200°C，且 時間為約20秒至約60秒。交聯之第二層以厚…地 應為約2〇nm至約150nm，且較佳為約3〇nm至約1〇〇贈。 第二層14之η值較佳兔的, 佳為約1.4至約2，且更佳為約16 約2’且在使用波長（例如365 nm 248 nm i93nm、 57咖或13·5 nm)下，k值為約〇至約〇6。固化之第二 層丨4宜充分交聯以致其 將實質上不可溶於典型有機溶劑 7 201033739 十’典型有機溶劑諸如乳酸乙g旨、丙二醇甲醚乙酸醋 (PGMEA)、丙二醇甲醚（pGME)、丙二醇正丙醚（pnp)、 環己酮、丙嗣、γ 丁内酯（GBL)及其混合物。因此，當固 化之第二層14經受剝離測試（stripping test)時，其剝離 百分比（percent stripping )應小於約5%，較佳小於約1%， 且甚至更佳為約〇%。剝離測試包括首先藉由求取固化之第 二層14之5個不同位置處的量測值的平均值來確定厚度。 此為初平均膜厚度。接著，將溶劑（例如乳酸乙酯）捣拌 於固化之膜上約20秒，接著在約2,〇〇〇_3,5〇〇 rpm下旋轉乾 燥約20-30秒以移除溶劑。再使用橢圓對稱法在晶片之5 個不同點處量測厚度，且確定該等量測值之平均值。此為 終平均膜厚度。 剝離量為初平均膜厚度與終平均膜厚度之差。剝離百 分比為： 剝離~__lxl〇〇 0 U刀平均膜厚度j 100 在一較佳具體實例中，隨後可在固化之第二層14上塗 覆光敏組成物以形成成像層（未圖示） _形成…。雖然此可由已知方法=像但= 述-種可能的方法。在該方法中，光敏組絲較佳經旋塗， 隨後在至少約80°c、較佳約8(rc至約13(rc且更佳約i〇(rc 至約not之溫度下塗覆後烘烤（ΓρΑΒ」）約6〇秒至約i2〇 秒之時間。適合之光敏組成物包括市售光阻劑或任何其他 光敏組成物。成像層烘烤後之厚度典型地應為約5〇 至 201033739 約1，000 urn ’且更佳為約60 nm至約4〇〇 nm。 隨後將成像層曝露於輻射中，其中光遮罩（ph〇t〇mask ) (未圖不）位於成像層表面上方。該遮罩具有經設計以允許 e
輻射穿過遮罩且接觸成像層表面的敞開區域（叩⑶)。 遮罩之其餘固體部分經設計以阻止輻射在某些區域接觸成 像層之表面。熟習此項技術者應容易地瞭解，敞開區域及 固體部分之布置係基於欲在成像層及最終成像層下方之各 層中开/成之所要圖案來設計。本發明方法所使用之輻射的 大部分波長可低於500 nm，但較佳波長係選自由365 ηιη、 248 nm、193nm、157nm 及 13.5nm 組成之群。 曝露後，成像層冑露於輻射之料變得可溶於光阻顯 影劑中。曝露後’較佳在約8(rc至約l8『c、更佳約⑽。c 至約18代之溫度下使成像層經受曝露後烘烤（PEB)約60 秒至約120秒之時間。隨後使成像層之由上述方法變得可 冷之曝露部分與光阻顯影劑接觸以移除曝露部分 中所示之圖案化層16。 耿圃 t層16包括凸起特徵18(例如線卜雖然 顯不兩個凸起特徵^ 知❹… 瞭解可根據此項技術中之現行 夭識形成方干凸起柱外 上…4 各凸起特徵18包括實質上垂直於 上表面1 4a之JL· C,I .. J第—側壁20a及第二侧壁20b， 上平行於上表面l4a ★々， 及X質 之各別上表面22。此外，特徵18 度呎較佳為約20nm s从 竹锻丨8之寬 m至約100 nm，更佳為約22 ⑽’且甚至更佳為約32nm。 -至約8〇 铁而上法描述由光敏組成物形成凸起特徵18之方法 然而，應瞭解特微18介 I万去。 亦可由多種其他組成物形成。舉 9 201033739 。特徵18亦可在選自由抗反射層、硬遮罩層、非晶形碳 層、石夕層、氧化物（例如金屬氧化物）層組成之群的層中 形成。對於任何該等層類型，特徵18均將根據已知方法形 j舉例而a ’可在第三層14上形成特定層，此後在該特 層形成成像層。成像層隨後將如上所述經圖案化，且 將該圖案轉印（例如經由㈣）至替代層以形成特徵18。 無論形成特徵18之材料如何，關鍵在於提供具有彼等特徵 18之經圖案化之結構1〇。此外，特徵18之間距（_較 佳為約1:2至約1:4,且更佳為約1:3 (參見圖在一 尤佳具體實例中，妒為32 nm ’而為96疆。 旦經圖案化之結構1G由上述方法或所屬領域中已知 之其他方法形成’即可將可收縮組成物24塗覆於第二層Μ 之上表面Ua上以及特徵18之側壁心、鳩及上表面a 上。雖然可收縮組成物24可由任何已知方法塗覆，但較佳 為旋塗。 隨後加熱可收縮組成物24，因釋放許多小分子而使其 顯著收縮’從而形成圖“Ο中所說明之保形塗;| 26。加埶 可收縮組成物所至之溫度應視形成特徵18之材料而定。舉 =而言’當特徵18由光阻組成物形成時，加熱可收縮組成 物24至低於约12(rc之溫度，較佳低於約ii〇t，且更佳 約m：至約⑽。C。當特徵18由不為光阻組成物之材料形 成時’加熱可收縮組成物24至低於約綱。c之溫度，較佳 低於約250t，且更佳為約1〇(rc至約21(rc。 保形塗層26與特徵18之側壁施、鳥或上表面a 之間不宜存在化學相互作用。此允許方法可用於任何類型 201033739 之特徵18。此外，上述烘烤溫度允許方法在避免特徵a變 形之溫和條件下使用。 ❿ ❿ 較佳」等於仍參考圖1(c))，且甚至更佳5小於ρ 從而允許在極少韻刻下形成前間隔件。「心表示保形塗層 26之特徵18頂部最厚點處的厚度，而「万」表示保形塗層 26之特徵18之間最薄點（亦即，特徵之間的「谷」之最低 點）處的厚度。利用位置乂及及作為參考，可收縮組成物 24在該加熱步驟期間應收縮至少約25%，較佳至少約洲， 更佳至夕約50/。’且甚至更佳為約55%至約。
接著#考圖1⑷，使保形塗層26經受钱刻製程以形 成前間隔件28°適合之钱刻劑包括選自由Cl2、CF4、CH3F 及CHF3組成之群的#刻劑，且典型的餘刻速率為約】入〆 私至約1G A/秒’且較佳為約3 A/秒至約8 秒。另外可 經由習用濕式姓刻製程來蚀刻。各前間隔件28包含凸起特 徵18及可收縮組成物殘留物3〇。如圖1⑷中所描繪，殘留 物30緊貼各側壁2〇a、2〇b。 隨後自各前間隔件28移除凸起特徵18 (例如經由〇2 刻）’留下殘留物30f isi w、、 物〇(圖…））。殘留物30充當「間隔件 (—)」以形成極小特徵（例如小於約—、較佳小於 約5〇⑽且更佳小於約32⑽之線）。亦即，使結構㈣ 受钱刻製程，該触刻製程將由殘留物3〇形成之圓案轉印至 第二層14中’從而在第二層14中形成線34。蝕刻製程移 除殘留物30以及未受殘留％ 3〇保護之區域中之第二層 14 °適合之㈣劑包括選自自cl2、CF4、CH3F及咖3组 成之群的蝕刻劑，且典型的蝕刻速率為約ιΑ/秒至約⑽ 201033739 秒，且較佳為約3人/秒至約8 A/秒。必要時，可使用習用 技術將圖案進一步轉印至第一層12及基板13。 以上方法描述本發明之雙重圖案化方法、宜藉由增加 額外蚀刻步驟來修改雙重圖案化方法以得到三重圖案化方 法。該方法顯示於圖2中，其中使用類似編號指定類似材 料。又，除非另作說明，否則將使用關於圖丨所述相同之 加工條件（例如旋轉速度、溫度、蝕刻、時間等）。 參考圖2⑷，可見再次如上所述提供圖案化結構1〇。 ❹ 凸起特徵18典型地應具有前述寬度π。隨後「修整 (trimmed )」彼等特徵i 8，以使其各別寬度至少減少一半;圖 2(b))。亦即，經修整之特徵18，之寬度π較佳應為約⑽㈣ 至約9〇nm，更佳為約6〇nm至約8〇nm，且甚至更佳為約 70 nm。該修整可制任何已知方法實現其中—種適合之 方法包括電漿蝕刻。 α 如圖2(c)中所示，隨後使特徵18，及第二層Μ經受 蚀刻製程以得到拱形特徵18„及部分_之第二層Μ，= ❹ =^包括較低凸起特徵或「結適於 =刻步驟之㈣劑包括選自自c12、CF4、ch3^chf^ 成之群的钮刻劑，且业创的為λ ’· U的蝕刻速率為約1 Α/秒至約1〇Α/ 秒，且較佳為约3 Α/秒至約7Α/秒。 υΑ/ 隨後移除棋形特徵18，.（例如 中所示之圓案化結·38β使用已知)二:：2⑷ 將光敏層…2(e))塗覆於上…(名如…法） . C覆於上表面14a丨及結36上。如圄 2(0中所描繪，隨後圖案 如圖 凸起特徵42。各凸起特徵4…：顯影）感先層40 ’得到 起特徵42包括實質上垂直於上 12 201033739 之各別第一側壁44a及第二侧壁44b，以及實質上平行於上 表面l4a’之各別上表面46。 接著’如先前所述及如圖2(g)中所示，將可收縮組成 物24塗覆於第二層14'之上表面14a’以及特徵42之侧壁 44a、44b及上表面46上。隨後使組成物24經受前述收縮 製程（圖2(h))以形成保形塗層26。圖2(i)-(k)之其餘步驟 與以上關於圖l(d)-(f)所述之步驟類似。然而，應注意圖2 之具體實例使圖案三重化而非雙重化（亦即，圖2之具體 ® 實例之線34比圖1之線多50〇/〇 )。線34亦宜極小，寬度小 於約70 nm，較佳小於約50 nm，且更佳為約16 nm至約32 nm ° 最後，圖2(1)說明將圖案轉印至第一層12之額外步驟。 如同先前具體實例之情況，必要時，可將該圖案進一步轉 ' 印至基板1 3。 應瞭解，上述方法為與光阻劑無關，且如上所述塗層 與基板之間不存在相互作用。因此，該方法可擴展至任何 基板，且可在溫和條件（< 12〇〇c)下塗覆，此避免使原始 線變形。因此，該新穎方法係基於不同於先前技術方法之 不同機制且提供優於先前技術方法之顯著優點。該方法可 用於使密集線之出現率加倍且甚至三倍。如本文所使用之 「密集（dense)」係指至少約5〇%之表面積充滿特徵18之區。 用作可收縮組成物24之組成物 用作可收縮組成物24之組成物較佳為有機或有機金屬 組成物且應展現某些使之適於該應用的性質。舉例而言， 組成物在上述加熱步驟期間必須展現高收縮。此意謂若特 13 201033739 徵18由光阻組成物形成，則可收縮組成物24必須在低於 約1紙、較佳低於約U(rc且更佳約8代至約⑽。c之溫 度下分解，以便組成物在不破壞特徵18之情況下收縮。若 特徵18由不為光阻組成物之材料形成，則可收縮組成物24 必須在低於約300。〇、較佳低於約25〇。〇且更佳約i〇〇t：至約 2UTC之溫度下分解，以便組成物在不破壞特冑18之情況下 收縮。 可收縮組成物24較佳包含可用於將固體溶解或分散於 組成物24内之有機溶劑。溶劑系統較佳經選擇以使得其不 會使光阻圖案變形，其中較佳溶劑係選自由均三甲苯、甲 基異丁基甲醇、d-檸檬烯及其混合物組成之群。此對特徵 18由脆性典型地大於其他基板之光阻組成物形成之具體實 例而言尤其有利。在特徵18不是由光阻組成物形成之具體 實例中，溶劑系統可包括上述溶劑及/或選自由乳酸乙酯、 丙二醇曱㈣、丙二醇甲醚乙酸酯及丙二醇正丙醚組成之群 的溶劑。 亦非常希望可收縮組成物之蝕刻比特徵18慢。因此， 與特徵18相比，可收縮組成物之蝕刻選擇性較佳小於約 0-30,更佳小於約0.25,且更佳為約〇 〇〇1至約〇1〇。當特 徵18由光阻組成物形成時，使用A作為蝕刻劑實現該等數 字。當特徵18由不為光阻組成物之材料形成時，使用、 CF4、CHsF或CHF3作為蝕刻劑實現該等數字。 種適合的可收縮組成物包含分散或溶解於溶劑系统 中之交聯劑。交聯劑因其可自縮合（self_c〇ndense)形成明 顯收縮之網狀結構而為適合的。適合用於本發明之典型交 201033739 聯劑為胺基塑膠（anlin〇plast)’諸如曱基化聚（三聚氰胺_ 共-甲醛）（由 Cytec Industries 以名稱 Cymel® 303 銷售）0 其他適合之交聯劑包括選自由以下組成之群的交聯劑：丁 基化/異丁基化聚（三聚氰胺_共_甲醛）、六曱基三聚氰胺 (HMM )、甘脲（諸如由 cytec Industries 以名稱 powderlink® 銷售者）、1，3-雙（曱氧基曱基）_4,5_雙（曱氧基乙烯脲 (BMNU」）、l，3-雙（甲氡基曱基）腺（「」）及下列衍生 物：
❹ A
Η, ΟχΗ2χ+2, Χ= 1 - 12
收縮度視所釋放之醇的分子量及 組合高釋放莫耳質量之醇（諾&丁藉由 （堵如丁醇）及較高溫度之烘
可達成較大收縮。必要時，可將抗㈣聚合物（諸如聚’ 氧燒）與交聯劑播合以改進㈣選H 對於此類組成物，溶劑系統較佳包含一或多種選自由 15 201033739 以下組成之群的溶劑··丙二醇單甲鍵（「pgmD、均三甲 苯、甲基異丁基甲醇、d_檸檬烯及其混合物。此外，基於將 組成物之總重量視為刚重量％，該具體實例之組成物之固 體含量較佳為約1重量％至約15重量％，且更佳為約3重 量/〇至約10重量％。基於將組成物中之固體總重量視為⑽ 重量％’交聯劑之存在量較佳應為約8G重量％至約99重量 %，且更佳為約90重量％至約95重量％。 組成物亦將包含酸，諸如選自由以下組成之群的酸. 對甲苯續酸、二壬基萘確酸、三氟甲烷硫酸及十七氟辛烧 續酸。基於將組成物中之交聯劑總重量視為⑽重量％，酸 之存在量較佳應為，約i重量％至約2〇重量％，且更佳為約5 重量％至約1 〇重量％。 該含交聯劑之組成物家族更適於特徵18不是由光阻組 成物形成之具體實例’因為該家族之組成物在較高烘烤溫 度下達成較佳收縮。 m 其他適合的組成物包含分散或溶解於溶劑系統中之具 有在鏈聚合反應中酸不敎之侧鏈的聚合物。如先前所述 經由旋塗製備厚膜，且當烘烤膜時，酸使酸不穩定側鏈裂 解，引起揮發性產物釋放。當側鏈釋放時，臈明顯收縮。 收縮度由側鏈之組成及大小決定。侧鍵可經選擇以使之可 由酸在低溫（例如低於約12(rc)下裂解，從而使該家族之 組成物亦適用於特徵18由光阻組成物形成以及特徵 不為光阻組成物之材料形成的情形。 用於該等聚合物中之單體包括選自由苯乙烯、丙烯酸 甲醋及丙烯酸酯衍生物組成之群的單體。一些適合之 於 201033739 - 苯乙烯之單體包括：
❹ 酸酯單體包括：
R
Ο
酸不穩定側鍵之來源可 τ、包括選自由第 醯基家族、金剛燒基家族及内醋家族組成 乙 二丁基家族 之群的來源 要時，亦可使用抗蝕組份製備具有適合之抗蝕性質之共聚 物0 17 201033739 對於此類組成物，溶劑系統較佳包含一或多種選自由 以下組成之群的溶劑：均三甲苯、甲基異丁基甲醇、d檸檬 稀其尾σ物必匕外，基於將組成物之總重量視為⑽重 量％’該具體實例之組成物之固體含量較佳為約2重量％至 約15重量％，且更佳為約3重量％至約ι〇重量％。基於將 組成物中之固體之總重量視為1〇〇重量％，聚合物之存在量 較佳應為約85重量％至約99重量％，且更佳為約9〇重量％ 至約95重量％。
該具體實例之組成物亦將包含酸，諸如選自由以下組 成之群的酸：W苯錢、二壬基萘錢、三氟甲烧硫酸 及十七氟辛烷磺酸。基於將組成物中之聚合物之總重量視 為100重量❶/。，酸之存在量較佳應為約1重量％至約1〇重 量且更佳為約3重量％至約7重量％。 重溶劑與抗蝕性聚合物之摻合物為適合之收縮組成物 24之又一實施例。抗蝕性聚合物可為與上述特徵1 8相比具
有蝕刻選擇性之任何聚合物。較佳該類抗蝕性聚合物為含 碎聚合物。 在旋塗形成均一膜後，重溶劑仍與抗蝕性聚合物在一 起。隨後在烘烤（較佳低於約12(rc，使之適於光阻特徵18 以及非光阻特徵18 )期間，重溶劑完全汽化，且僅留下抗 蝕性聚合物來形成保形塗層。「重溶劑（Heavy s〇lvent)」係 指與抗蝕性聚合物相容且沸點允許在旋塗後保留但在前述 收縮溫度期間汽化的溶劑。重溶劑之典型實例包括選自由 以下組成之群的溶劑：丙烯酸2-乙基-2-金剛烷酯、甲基丙 烯酸2·甲基-2·金剛烷酯、丙烯酸2-甲基·金剛烷酯、κ+ _ 18 201033739 稀及其混合物。 對於此類組成物，基於將組成物之總重量視為〗重 量％，組成物之固體含量較佳為約2重量％至約15重量％， 且更佳為約3重量％至約1G重量％。基於將組成物中之固 體總重量視為100重量％，聚合物之存在量較佳應為約2〇 重量％至約80重量。/。’且更佳為約4〇重量％至約6〇重量 ❹
適於可收縮組成物24之材料之另—家族包括分散或溶 解於溶劑系統中之有機金屬化合物。較佳有機金屬化合物 為在前述收縮溫度下會釋放配位體形成金屬氧化物之化合 物。該揮發性配位體消除可產生保形塗層26。配位體可在 低温（例如低於約12〇。〇下釋放，從而使該家族之組成物 亦適合用於特徵18由光阻組成物形成以及特徵18由不為 光阻組成物之材料形成的情形。 典型實例包括選自由以下組成之群的物質：雙(乙醯乙 酸乙酿）二異丙醇鈦（IV)、雙（乳酸銨）二氫氣化欽（ιν)、（雙 -2,3-戊二酸)二異丙醇鈦(IV)、乙醯乙酸乙醋二異丙醇銘、 雙（M-戊二酸）氧化師v)、雙（2,4戊二酸）二丁醇錯雙（乙 醯乙酸乙醋)戊二酸醋銘、雙(2,4·戊二酸)二丁醇給、2,4-戊 一酸飢III及聚（鈦酸二丁酿）。 、下顯丁备使用雙（乙酿乙酸乙醋）二異丙醇欽（IV)作 為有機金屬化合物時會出現之配位體釋放： 19
I 201033739 Η H3C、 .CH, "CH〇 Η3〇(Η2〇)3〇-,Τΐ^* _^~o(ch2)3ch3 Δ
Tio, Η3(Τ
Y ,c、 、ch3 對於此類組成物，溶劑系統較佳包含一或多種選自由 以下組成之群的溶劑··甲基異丁基甲醇、均三甲苯、i十二 烯及其混合物。此外’基於將組成物之總重量視為⑽重 量。/。’組成物之固體含量較佳為、約2重4%至約15重量％， θ 且更佳為約3重量％至約10重量％。基於將組成物中之固 體總重量視為1〇〇重量％’有機金屬化合物之存在量較佳應 為約40重量％至約90重量％，且更佳為約4〇重量％至約 80重量％。 實施例 以下實施例闡述本發明之較佳方法。然而，應瞭解提 供該等實施例以說明本發明，且其中任何内容均不應視為 對本發明整體範疇之限制。 © 實施例1 於極性溶劑中之交聯劑 藉由將 10 公克 Cymel® 303 (自 Cytec Industries，West
Paterson，NJ獲得之交聯劑）溶解於9〇公克極性溶劑p(JME (自 General Chemical West LLC，Hollister, CA 獲得）中製 備溶液。所得溶液包含〇_25 wt%交聯劑。接著，添加〇 〇25 公克對甲苯績酸（「p-TSA」，自 Sigma-Aldrich，St. Louis，ΜΟ 20 201033739 獲得）作為觸媒。攪拌混合物10分鐘，隨後經0.1 /xm過濾 器過濾。以1,500 rpm將調配物旋塗於平面矽晶片上60秒， 且量測膜或塗層厚度。隨後在205 °C下烘烤晶片60秒，其 中流程A描繪該反應。再量測塗層厚度以獲得收縮。烘烤 期間，厚度減少了 35%。 亦以1，500 rpm將調配物旋塗於具有矽線之晶片上60 秒，且在205°C下烘烤60秒。圖3顯示矽線上所得之保形 塗層。 ❹
流程A
Rxcr^NN//SN'〇/R
R = H, CH3 ^CH2CH2CH2Chb H+ i --聚合物網狀結構+ ROH 1 △ 實施例2 於非極性溶劑中之交聯劑 藉由將10公克Cymel® 303溶解於90公克非極性溶劑 均三曱苯（自Sigma-Aldrich，St. Louis, MO獲得）中製備 溶液。接著，添加0.05公克二壬基萘磺酸溶液（「DNNSA」， 自 Sigma-Aldrich，St. Louis，MO 獲得）以獲得包括 0.5 wt% 交聯劑之溶液。攪拌混合物10分鐘，隨後經0.1 /im過濾器 過遽。 以1,500 rpm將調配物旋塗於平面矽晶片上60秒，且 21 201033739 量測塗層厚度。隨後在2051：下烘烤晶片60秒，且量測塗 層厚度以確定塗層收縮。烘烤期間，塗層厚度減少了 35%。 亦以1 ’5 00 rpm將調配物旋塗於具有矽線之晶片上6〇 秒，隨後在205°C下烘烤60秒。圖4顯示矽線晶片上所得 之由該調配物製成的保形塗層。 實施例3 聚（Adamantate EA) 在該程序中’將1〇公克（4〇 wt% ) Adamantate EA (丙 稀酸2-乙基-2-金剛烷酯；自Idemitsu Kosan有限公司，Chiba, ◎ Japan 獲得）及 〇. 1 公克（Adamantate EA 的 1 wt% )偶氮二 異丁腈（「八18!^」，自81呂11^-八1(11^11，31[〇1^8，崖0獲得之 引發劑）溶解於15公克均三曱苯中。在1001：下聚合24小 時’此後使用均三甲笨稀釋溶液至7.5 wt%。接著，向聚合 物溶液中添加〇.〇5公克DNNSA(聚合物的0.5 wt%)。攪拌 混合物10分鐘，且經〇」μιη過濾器過濾。以1，500 rpm將 調配物旋塗於平面矽晶片上6〇秒，且量測塗層厚度。隨後 在1 l〇°C下烘烤晶片60秒，且再量測塗層之厚度以獲取收 〇 縮資料。烘烤期間，塗層厚度減少了 70%。流程B描繪烘 烤期間揮發性組份之釋放。 亦以1，500 rpm將調配物旋塗於經光阻劑圖案化之晶片 上60秒，且在9〇〇c下烘烤6〇秒。圖5顯示光阻線頂部所 得之保形塗層。 22 201033739
流程B
旋塗後之膜 實施例4 ® 聚（Adamantate EA-聚石夕氧） 藉由將 8 公克（32 wt0/。）Adamantate EA 及 2 公克（8 wt% )聚矽氧甲基丙烯酸酯單體（3_(甲基丙烯醯基氧基）丙 基-參（三甲基矽氧基）-矽烷，自TCI America，Portland, OR 獲得）溶解於15公克均三甲苯中製備溶液。在1〇〇〇c下聚 合24小時。使用1〇8 3公克均三甲苯稀釋溶液至7 5 wt% ’ 且隨後向溶液中添加0 05公克DNNSA (為聚合物的〇5 φ Wt /° )。擾拌混合物10分鐘，且經〇. 1 μπι過濾器過濾。以 1，500 rpm旋塗平面矽晶片60秒，且量測塗層厚度。隨後在 H〇°C下烘烤晶片60秒’且再量測塗層之厚度以獲取收縮資 料。洪烤期間，塗層厚度減少了 55%。 亦以1，500 rpm將調配物旋塗於經光阻劑圖案化之晶片 上60秒，且在9(rc下烘烤6〇秒。圖6顯示光阻線頂部所 得之保形塗層。 在以下條件下，使用Oxford Plasmalab RIE量測塗層在 不同氣體中之蝕刻速率：功率：100 W ;壓力：5〇毫托 (mT〇rr)’ 背面氦氣（backside Helium ) : 3 毫托；及氣體. 23 201033739 50 seem。蝕刻30秒後塗層與市售光阻劑（AR1682J，自JSR Micro，Sunnyvale，CA獲得）及熱氧化層相比之钱刻選擇性 列於表1中。 表1 氣體 〇2 cf4 Cl2 AR1682J 0.25 1.2 1.4 熱氧化物 — 2.4 — 實施例5 ❹ 聚（Adamantate EA-聚石夕氧） 藉由將8公克（32 wt% ) Adamantate EA及2公克（8 wt% )聚矽氧曱基丙烯酸酯單體（MCR-M07，以單甲基丙 烯酸酯封端之聚雙曱基矽氧烷；分子量：600-800 g/mol ; 自Gelest公司，Morrisville，PA獲得）溶解於15公克均三甲 苯中製備溶液。在80°C下聚合24小時。使用108.3公克甲 基異丁 基曱醇（自 Sigma-Aldrich，St. Louis，MO 獲得）稀 釋溶液至7.5 wt%，且隨後向溶液中添加〇 05公克DNNSA Ο (聚合物的0.5 wt%)。攪拌混合物1〇分鐘，隨後經〇丨μιη 過濾器過濾。以1，500 rpm旋塗平面矽晶片60秒，且量測 塗層之厚度。隨後在11(TC下烘烤塗層60秒，且再量測塗 層之厚度以獲取收縮資料。烘烤期間，塗層厚度減少了 55%。 在以下條件下，使用Oxford Plasmaiab RIE量測在不同 氣體中之敍刻速率：功率：100 W;壓力：5〇毫托；背面氛 氣：3毫托；氣體：50 seem ^蝕刻30秒後塗層與市售光阻 劑（AR1682J )及熱氧化層相比之蝕刻選擇性列於表2中。 24 201033739 表2 氣體 〇2 cf4 Cl2 AR1682J 0.10 1.2 1.4 熱氧化物 -- 2.4 —— 如圖7(a)中圖解所描繪’使用經抗蝕劑圖案化之晶片作 為模板。使用底部有機抗反射塗層（ARC® 29A，自Brewer 〇 Science公司，Rolla，MO獲得）作為經圖案化之光阻劑與基 板之間的層。亦以1，〇〇〇 rpm將上述調配物旋塗於經光阻劑 圖案化之晶片上60秒，隨後在90。(：下烘烤60秒。圖7(b) 顯示光阻線頂部所得之保形塗層。 隨後使用氯氣（Cl2 : 50 seem ;氬氣：20 seem ;功率： 200 W ;及壓力：50毫托）钱刻經塗佈之晶片，且圖7(c) 顯示側壁形成。進一步使用氧氣（〇2 : 5〇 sccm ;功率：1〇〇 W ’壓力：1 〇〇毫托）蝕刻晶片以移除抗蝕劑。然而，間隔 © 件因使用底部有機抗反射塗層作為底層而塌陷，該塗層在 氧氣中之蝕刻比間隔件快得多（圖7(d))。 為解決塌陷問題，用圖8(a)中所示之層堆疊製備新模 板。詳言之’將OptiStack SOC 110 (旋塗碳或「SOC」，自 Brewer Science Brewer Science 公司，Rolla” MO 獲得）底層 塗覆於矽晶片上。接著，將底部含矽抗反射塗層 〇PTISTACK®HM710(硬遮罩或「HM」，自 Brewer Science 公司，Rolla，MO獲得）塗覆於旋塗碳之頂部。在硬遮罩層 頂部上形成光阻層（Pi6〇〇1，自TOK，Japan獲得），接著圖 25 201033739 案化以形成線。 以2,000 rpm將上述調配物旋塗於經光阻劑圖案化之晶 片上60秒，接著在贼下烘烤6〇秒（參見圖8(b))。使用 氯氣（Cl2 . 50 secm ;氬氣：20 sccm ;功率：2〇〇 w ;壓力： 50毫托）蝕刻經塗佈之晶片。圖8(c)顯示側壁形成。 進一步由氧氣蝕刻晶片以移除光阻劑（〇2 : 5〇 sccm ; 功率：100W;壓力：100毫托）β圖8(d)顯示抗蝕劑移除之 後，站立之間隔件。使用Cl蝕刻（Ch: 35sccm;功率： 1〇〇 W;壓力：50毫托）將圖案轉印至底部硬遮罩層上（圖 ❹ 8(e))。 實施例6
Adamantate EM與有機聚矽氧共聚物之摻合物 藉由將9公克（36 wt% )聚矽氧甲基丙烯酸酯單體 (3-(甲基丙稀酿基氧基）丙基_參（三曱基碎氧基）碎烧，自tci America, Portland，OR 獲得）、1 公克（溶液的 4 wt〇/〇 )甲基 丙烯酸縮水甘油酯（glycidyl methacrylate )及0.1公克（單 體的1 wt%) AIBN溶解於15公克均三甲苯中製備溶液。在 〇 100°C下聚合24小時’且溶液不經進一步純化即使用。 製備均三甲苯及上述聚合物（6 wt% )及23.3公克（14 wt%)甲基丙稀酸2-乙基-2-金剛烧醋（由Idemitsu Kosan 有限公司，Chiba，Japan以名稱Adamantate EM銷售）之溶 液。攪拌混合物10分鐘，且經0.1 μιη過濾器過濾。以1，500 rpm將混合物旋塗於平面矽晶月上6〇秒，且量測塗層厚度。 隨後在110°C下烘烤塗層60秒，且再量測塗層之厚度以獲 取收縮資料。烘烤期間，塗層厚度減少了 70%。 26 201033739 實施例7 有機金屬化合物 將雙（乙酼乙酸乙酯）二異丙醇鈦（IV) ( 〇5 g，自 Sigma_Alddch，St· Louis，MO 獲得）溶解於 9 5 g 甲基異丁 基曱醇中。攪拌混合物1 〇分鐘，且經〇丨過濾器過濾。 以1，500 rpm將混合物旋塗於平面矽晶片上6〇秒，且量測 塗層厚度。隨後在11 (TC下烘烤塗層60秒，且再量測塗層 之厚度以獲取收縮資料《烘烤期間，塗層厚度減少了 8〇〇/〇。 【圖式簡單說明】 圖1圖解描緣根據本發明之雙重圖案化方法； 圖2為描繪根據本發明之三重圖案化方法之圖解說明； 圖3為實施例1中製備之保形塗層之掃描電子顯微鏡 (scanning electron microscope，SEM)照片； 圖4為顯示實施例2中製備之保形塗層之SEM照片； 圖5為實施例3中製備之保形塗層之SEM照片； 圖6為顯示實施例4中製備之保形塗層之SEM照片； 圖7(a)圖解說明實施例5中所使用之模板堆疊 (template stack)； 圖7(b)為實施例5中製備之保形塗層之SEM照片； 圖7(c)為蝕刻實施例5中之結構之後形成的側壁之 SEM照片； 圖7(d)為顯示進一步蝕刻以移除實施例5之結構的光 阻劑後出現之塌陷的SEM照片； 圖8(a)圖解説明實施例5中所使用以防止圖案塌陷之 27 201033739 替代模板堆叠； 圖8(b)為實施例5中製備之塗層之SEM照片； 圖8(c)為蝕刻實施例5中之替代結構之後形成的側壁 之SEM照片； 圖8(d)為顯示實施例5之替代結構在進一步蝕刻以移 除光阻劑之後的SEM照片；及 圖8(e)為顯示實施例5之替代結構在進一步飯刻以 圖案轉印至硬遮罩層之後的SEM照片。 ' 【主要元件符號說明】
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Claims (1)

  1. 201033739 七、申請專利範圍： 1.一種形成微電子結構之方法，該方法包含·· 提供具有圖案化表面的前驅結構，該圖案化表面包括 至少-個具有第一與第二側壁及上表面之凸起特徵； 將可收縮組成物塗覆於該圖案化表面上，該組成物覆 蓋該特徵側壁及上表面； ,加熱該可收縮組成物以在該圖案化表面上及該特徵上 方形成該組成物之保形層；及 移除至/ 分該保形層以得到__包含該特徵及胃 特徵侧壁之該保形層之殘留物的前間隔件結構。 2.如申請專利範圍第！項之方法，其中該可收縮組成物 在該塗覆之後及該加熱之前具有初厚度，且該保形層在該 加熱之後及該移除之前具有終厚度，該終厚度比該初厚度 小至少約25%。 3·如申請專利範圍第！項之方法，其進一步包含自該前 間隔件結構移除該凸起特徵以在該圖案化表面上留下該殘 留物。 4_如申請專利範圍第3項之方法，其中該圖案化表面在 該塗覆之前具有第一圖案且在移除該凸起特徵之後具有第 二圖案，該第二圖案為該第一圖案的雙倍。 5·如申請專利範圍第3項之方法，在該圖案化表面下方 有-或多$，且該方法進—步包含將由該殘留物形成之圓 案向下轉印至位力該圖案化表面下方之該等層之一或多 者。 6.如申請專利範圍第！項之方法，該圖案化表面包括至 29 201033739 =固彼此緊密鄰接之該凸起特徵，”在該加熱之後， 入徵,表面上有該保形層之最大厚“且該圖案化表面 上介於遠兩個凸起牲Μ 凸起特徵之間的某點處具有最小厚度5，且忍 小於或等於4。 申月專利範圍帛i項之方法，其中該前驅結構包 含： 具有上表面之第一層； 面鄰 具有上表面之第二層，該第二層與該第-層上表 接；且 Ο 5亥圖案化表面與該第二層上表面鄰接。 ::申請專利範圍第7項之方法’該第一層包含旋塗碳 層包含硬遮罩層，且該圖案化表面包含光敏層。 ㈣9·如申請專利範圍第1項之方法，該圖案化表面具有多 個間距為約1:2至約1:4之該凸起特徵。 有多 ❹ =請專利範圍第！項之方法其中該圖案化結構 徵：二含位於該至少一個凸起特徵下方之第二凸起特 :::第二凸起特徵具有第一與第二側壁及上表面，且該 傾"個凸起特徵係與該第二凸起特徵側壁及上表面接 :成該第二凸起特徵及該至少一個凸起特徵係由不同材: 步包含自該 圖案化表面 11.如申請專利範圍第10項之方法，其進一 前間隔件結構移除該至少—個凸起特徵以在該 上留下該殘留物及該第二凸起特徵。
    12·如申請專利範圍 該塗覆之前具有第一 第11項之方法，其中該圖案化表面 圖案且在移除該至少一個凸起特徵 30 201033739 之後具有第二圖案’該第二圖索為該 13,如申請專利範圍第i項之、 圖案的二倍。 物係選自由以下組成之群： 方法’其中該可收縮組成 (〇包含分散或溶解於溶劑 ⑴包含分散或溶解於溶劑系統：交聯：之組成物： 物’該聚合物包含酸不穩定側鏈；、、. < 聚合物之組成 (c )包含分散或溶解於包含六 録聚合物之組成物；& ，合劑之溶劑系統中的抗 ❹ ⑷包含溶解或分散於溶劑系統中之有機金屬化合物 之組成物。 其中該可收縮組成 14_如申請專利範圍第13項之方法， 物為（a)’且該交聯劑係選自由以下組成之群：甲基化聚（三 聚氰胺-共-曱醛）、丁基化聚（三聚氰胺-共·甲醛）、異丁基: 聚（三聚氰胺-共-曱搭）、六甲基三聚氰胺、甘腺、(甲 氧基甲基）-4,5-雙（甲氧基）-乙烯脲、1，3-雙（甲氧基甲基）腺及 下列衍生物：
    31 201033739 A
    、Η· CxH2x+2, X= 1 叫2 B
    r/〇x/n 丫 nV〇、r
    :H2.;
    o 15. 如申請專利範圍第i3 ^ A 峭您方法，其中該可收縮組成 物為（b)’且該聚合物包含選自 史目由本乙烯、甲基丙烯酸酯 及丙烯酸酯組成之群的單體， 一 〃干姐見該酸不穩定側鏈係選自由 第三丁基、乙醯基、金剛烷基及内酯組成之群。 16. 如申請專利範圍第13項之方法，其中： 該可收縮組成物為（c ); 比 〇 當使用〇2作為蝕刻劑時，與該至少—個凸起特徵相 該聚合物具有小於約0.30之蝕刻選擇性；且 該重溶劑係選自由以下組成之群：丙烯酸2_乙基_2•金 剛燒8曰、甲基丙烯酸2_甲基_2-金剛燒酯、丙稀酸2-甲基_ 金剛烧酯、1-十二烯及其混合物。 17. 如申請專利範圍第13項之方法，其中該可收縮組成 物為（d)’且該有機金屬化合物係選自由以下組成之 32 201033739 雙（乙醯乙酸乙酯）二異丙醇鈦（ιν)、雙（乳酸銨）二氫氧化鈦 (IV)、（雙-2,3-戊二酸）二異丙醇鈦（IV)、乙醯乙酸乙酯二異 丙醇鋁、雙（2,4-戊二酸）氧化釩（IV)、雙（2,4-戊二酸）二丁醇 鍺、雙（乙醯乙酸乙酯）戊二酸鋁、雙（2,4-戊二酸）二丁醇铪、 2’4-戊二酸釩III及聚（鈦酸二丁酯）。 18.如申請專利範圍第丨項之方法，其中該加熱包含在 小於約30(TC之溫度下加熱。
    19.如申請專利範圍第18項之方法，其中該加熱包含在 、於約120。(：之溫度下加熱。 包：〇.如申請專利範圍第19項之方法其中該圖案化表面 规層，且該可收縮組成物包含選自由均三 …基甲醇、d韻烯及其混合物組成之群的：劑。、 八 圖式： (如次頁）
    33
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
TWI682056B (zh) * 2016-07-29 2020-01-11 美商蘭姆研究公司 用於半導體圖案化應用之摻雜的原子層沉積膜
US10658172B2 (en) 2017-09-13 2020-05-19 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10804099B2 (en) 2014-11-24 2020-10-13 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis

Families Citing this family (341)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133659B2 (en) 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP2014507795A (ja) 2010-12-27 2014-03-27 ブルーワー サイエンス アイ エヌ シー． 高度なパターン形成に必要な小型フィーチャのパターン形成プロセス
US8901016B2 (en) * 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8968989B2 (en) * 2011-11-21 2015-03-03 Brewer Science Inc. Assist layers for EUV lithography
US8551690B2 (en) 2012-01-20 2013-10-08 Micron Technology, Inc. Methods of forming patterns
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9275960B2 (en) * 2012-09-27 2016-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit formed using spacer-like copper deposition
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US8999852B2 (en) 2012-12-12 2015-04-07 Micron Technology, Inc. Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate
US8889559B2 (en) 2012-12-12 2014-11-18 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8889558B2 (en) 2012-12-12 2014-11-18 Micron Technology, Inc. Methods of forming a pattern on a substrate
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8937018B2 (en) 2013-03-06 2015-01-20 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US8961807B2 (en) 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
CN104078329B (zh) * 2013-03-28 2019-05-28 中芯国际集成电路制造(上海)有限公司 自对准多重图形的形成方法
US9318412B2 (en) 2013-07-26 2016-04-19 Nanya Technology Corporation Method for semiconductor self-aligned patterning
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9129814B2 (en) * 2013-11-25 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
KR20150136387A (ko) 2014-05-27 2015-12-07 삼성전자주식회사 반도체 소자의 제조 방법
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
KR102193680B1 (ko) 2014-08-14 2020-12-21 삼성전자주식회사 반도체 소자의 제조 방법
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10475642B2 (en) 2016-04-21 2019-11-12 Applied Materials, Inc. Doped and undoped vanadium oxides for low-k spacer applications
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
JP7190814B2 (ja) 2017-02-13 2022-12-16 ラム リサーチ コーポレーション エアギャップの形成方法
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN116732497A (zh) 2018-02-14 2023-09-12 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR20200123482A (ko) 2018-03-19 2020-10-29 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102709511B1 (ko) 2018-05-08 2024-09-24 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
TW202405221A (zh) 2018-06-27 2024-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
WO2020092963A1 (en) 2018-11-02 2020-05-07 Brewer Science, Inc. Bottom-up conformal coating and photopatterning on pag-immobilized surfaces
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11393694B2 (en) * 2018-11-13 2022-07-19 Tokyo Electron Limited Method for planarization of organic films
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
TWI756590B (zh) 2019-01-22 2022-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
CN114270479B (zh) 2019-06-27 2022-10-11 朗姆研究公司 交替蚀刻与钝化工艺
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
JP2021111783A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー チャネル付きリフトピン
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210093163A (ko) 2020-01-16 2021-07-27 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
JP2023535292A (ja) * 2020-07-23 2023-08-17 ラム リサーチ コーポレーション 酸化スズを使用した高度な自己整列マルチパターニング
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TW202242184A (zh) 2020-12-22 2022-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (225)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4175175A (en) 1963-07-16 1979-11-20 Union Carbide Corporation Polyarylene polyethers
USB392136I5 (zh) 1964-08-26
US3561962A (en) 1966-09-01 1971-02-09 Xerox Corp Method of image reproduction by photo-polymerization and blushing
US3629036A (en) 1969-02-14 1971-12-21 Shipley Co The method coating of photoresist on circuit boards
US3682641A (en) 1970-03-23 1972-08-08 Du Pont Photoresist developer extender baths containing polyoxyalkylene ethers and esters and process of use
US3615615A (en) 1970-04-13 1971-10-26 Eastman Kodak Co Photographic emulsions including reactive quaternary salts
US3833374A (en) 1970-07-14 1974-09-03 Metalphoto Corp Coloring of anodized aluminum
US3894163A (en) 1971-03-08 1975-07-08 Western Electric Co Additives to negative photoresists which increase the sensitivity thereof
US3856751A (en) 1972-06-14 1974-12-24 Eastman Kodak Co Diacid-xanthylium ion polyester and photographic element comprised thereof
US3873361A (en) 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US3976524A (en) 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
CA1077787A (en) 1975-11-21 1980-05-20 National Aeronautics And Space Administration Abrasion resistant coatings for plastic surfaces
DE2861696D1 (en) 1977-09-07 1982-04-29 Ici Plc Thermoplastic aromatic polyetherketones, a method for their preparation and their application as electrical insulants
JPS5471579A (en) 1977-11-17 1979-06-08 Matsushita Electric Ind Co Ltd Electron beam resist
US4244799A (en) 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4244798A (en) * 1979-10-29 1981-01-13 General Motors Corporation Exhaust electrode process for exhaust gas oxygen sensor
US4369090A (en) 1980-11-06 1983-01-18 Texas Instruments Incorporated Process for etching sloped vias in polyimide insulators
US4430419A (en) 1981-01-22 1984-02-07 Nippon Telegraph & Telephone Public Corporation Positive resist and method for manufacturing a pattern thereof
US4397722A (en) 1981-12-31 1983-08-09 International Business Machines Corporation Polymers from aromatic silanes and process for their preparation
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4526856A (en) 1983-05-23 1985-07-02 Allied Corporation Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents
US4996247A (en) 1984-02-10 1991-02-26 General Electric Company Enhancing color stability to sterilizing radiation of polymer compositions
US4568631A (en) 1984-04-30 1986-02-04 International Business Machines Corporation Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone
JPS60262150A (ja) 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
DE3425063A1 (de) 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie
US4578328A (en) 1984-07-09 1986-03-25 General Electric Company Photopatternable polyimide compositions and method for making
US4683024A (en) 1985-02-04 1987-07-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication method using spin-on glass resins
US4732841A (en) 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4742152A (en) 1986-05-27 1988-05-03 United Technologies Corporation High temperature fluorinated polyimides
US5091047A (en) 1986-09-11 1992-02-25 National Semiconductor Corp. Plasma etching using a bilayer mask
US4808513A (en) 1987-04-06 1989-02-28 Morton Thiokol, Inc. Method of developing a high contrast, positive photoresist using a developer containing alkanolamine
US4927736A (en) 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
JP2557898B2 (ja) 1987-07-31 1996-11-27 株式会社東芝 半導体装置
US5137780A (en) 1987-10-16 1992-08-11 The Curators Of The University Of Missouri Article having a composite insulative coating
US4803147A (en) 1987-11-24 1989-02-07 Hoechst Celanese Corporation Photosensitive polyimide polymer compositions
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US4845265A (en) 1988-02-29 1989-07-04 Allied-Signal Inc. Polyfunctional vinyl ether terminated ester oligomers
US4891303A (en) 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
KR910000832A (ko) 1988-06-28 1991-01-30 랄프 챨스 메더스트 인터레벨 유전체 및 기질 피복물용의 저유전상수 및 저수분흡수율을 갖는 폴리이미드 및 코폴리이미드
US5304626A (en) 1988-06-28 1994-04-19 Amoco Corporation Polyimide copolymers containing 3,3',4,4'-tetracarboxybiphenyl dianhydride (BPDA) moieties
DE3835737A1 (de) 1988-10-20 1990-04-26 Ciba Geigy Ag Positiv-fotoresists mit erhoehter thermischer stabilitaet
US5024922A (en) 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
US5169494A (en) 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5057399A (en) 1989-03-31 1991-10-15 Tony Flaim Method for making polyimide microlithographic compositions soluble in alkaline media
US5198153A (en) 1989-05-26 1993-03-30 International Business Machines Corporation Electrically conductive polymeric
US5246782A (en) 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
KR950011927B1 (ko) 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
US5132774A (en) * 1990-02-05 1992-07-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including interlayer insulating film
US5126231A (en) 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
US5066566A (en) 1990-07-31 1991-11-19 At&T Bell Laboratories Resist materials
JPH04151155A (ja) 1990-10-15 1992-05-25 Seiko Epson Corp 半導体装置の製造方法
JP3041972B2 (ja) 1991-01-10 2000-05-15 富士通株式会社 半導体装置の製造方法
JPH05326358A (ja) 1992-05-18 1993-12-10 Sony Corp 微細パターン形成方法
DE69331471T2 (de) 1992-07-22 2002-06-20 Asahi Kasei K.K., Osaka Photoempfindliche Polyimidvorlaüferzusammensetzung
US5370969A (en) 1992-07-28 1994-12-06 Sharp Kabushiki Kaisha Trilayer lithographic process
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
US5443941A (en) 1993-03-01 1995-08-22 National Semiconductor Corporation Plasma polymer antireflective coating
JPH06295064A (ja) 1993-04-09 1994-10-21 Kansai Paint Co Ltd 感光性組成物及びパターンの製造方法
US5397684A (en) 1993-04-27 1995-03-14 International Business Machines Corporation Antireflective polyimide dielectric for photolithography
JPH07183194A (ja) 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
US5691101A (en) 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
GB2288184A (en) 1994-03-31 1995-10-11 Catalysts & Chem Ind Co Coating composition
US5667940A (en) 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
JPH07335884A (ja) 1994-06-14 1995-12-22 Sony Corp サイドウォールスペーサの形成方法
JP3033443B2 (ja) 1994-06-29 2000-04-17 信越化学工業株式会社 反射防止膜材料
US5607824A (en) 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JP3325715B2 (ja) 1994-08-24 2002-09-17 ホーヤ株式会社 反射防止性を有する光学部材の製造方法
JPH08110638A (ja) 1994-10-13 1996-04-30 Hitachi Chem Co Ltd 感光性樹脂組成物およびレジスト像の製造法
US5688987A (en) 1994-11-09 1997-11-18 Brewer Science, Inc. Non-subliming Mid-UV dyes and ultra-thin organic arcs having differential solubility
US5554473A (en) 1994-11-23 1996-09-10 Mitsubishi Chemical America, Inc. Photoreceptor having charge transport layers containing a copolycarbonate and layer containing same
US5542971A (en) 1994-12-01 1996-08-06 Pitney Bowes Bar codes using luminescent invisible inks
US5545588A (en) 1995-05-05 1996-08-13 Taiwan Semiconductor Manufacturing Company Method of using disposable hard mask for gate critical dimension control
DE69628613T2 (de) 1995-07-12 2004-04-29 Mitsubishi Engineering-Plastics Corp. Polycarbonatharzzusammensetzung
US5968324A (en) 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
KR100223329B1 (ko) 1995-12-29 1999-10-15 김영환 반도체 소자의 미세 패턴 제조방법
KR100206597B1 (ko) 1995-12-29 1999-07-01 김영환 반도체 장치의 미세패턴 제조방법
KR19990008362A (ko) 1996-03-06 1999-01-25 얀 드'해머,헤르베르트 볼만 리프트-오프 이미징 프로파일을 얻기 위한 방법
KR970071126A (ko) 1996-04-01 1997-11-07 김광호 이중 포토레지스트를 이용한 패턴 형성방법
US5633210A (en) 1996-04-29 1997-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming damage free patterned layers adjoining the edges of high step height apertures
US5807790A (en) 1996-05-07 1998-09-15 Advanced Micro Devices, Inc. Selective i-line BARL etch process
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US5739254A (en) 1996-08-29 1998-04-14 Xerox Corporation Process for haloalkylation of high performance polymers
JPH10149531A (ja) 1996-11-15 1998-06-02 Sony Corp 磁気記録媒体及びその製造方法
US5952448A (en) 1996-12-31 1999-09-14 Korea Research Institute Of Chemical Technology Stable precursor of polyimide and a process for preparing the same
TW432257B (en) 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
US6232386B1 (en) 1997-02-26 2001-05-15 Integument Technologies, Inc. Polymer composites having an oxyhalo surface and methods for making same
US6487879B1 (en) 1997-03-07 2002-12-03 Corning Incorporated Method of making titania-doped fused silica
JP3766165B2 (ja) 1997-03-07 2006-04-12 株式会社ニコン 画像形成方法及び感光材料
JPH10307394A (ja) 1997-05-09 1998-11-17 Hitachi Ltd ポジ型感光性樹脂組成物とそれを用いたパターン形成方法並びに電子装置の製法
TW473653B (en) 1997-05-27 2002-01-21 Clariant Japan Kk Composition for anti-reflective film or photo absorption film and compound used therein
US6428894B1 (en) 1997-06-04 2002-08-06 International Business Machines Corporation Tunable and removable plasma deposited antireflective coatings
US6054254A (en) 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
JP3473887B2 (ja) 1997-07-16 2003-12-08 東京応化工業株式会社 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法
US6124077A (en) 1997-09-05 2000-09-26 Kansai Paint Co., Ltd. Visible light-sensitive compositions and pattern formation process
KR100566042B1 (ko) 1997-10-07 2006-05-25 간사이 페인트 가부시키가이샤 포지티브형전착포토레지스트조성물및패턴의제조방법
US6218292B1 (en) 1997-12-18 2001-04-17 Advanced Micro Devices, Inc. Dual layer bottom anti-reflective coating
US6338936B1 (en) 1998-02-02 2002-01-15 Taiyo Ink Manufacturing Co., Ltd. Photosensitive resin composition and method for formation of resist pattern by use thereof
US5998569A (en) 1998-03-17 1999-12-07 International Business Machines Corporation Environmentally stable optical filter materials
US6156665A (en) 1998-04-13 2000-12-05 Lucent Technologies Inc. Trilayer lift-off process for semiconductor device metallization
US6451498B1 (en) 1998-05-28 2002-09-17 Atotech Deutschland Gmbh Photosensitive composition
JP3673399B2 (ja) 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
US6063547A (en) 1998-06-11 2000-05-16 Chartered Semiconductor Manufacturing, Ltd. Physical vapor deposition poly-p-phenylene sulfide film as a bottom anti-reflective coating on polysilicon
US6121098A (en) 1998-06-30 2000-09-19 Infineon Technologies North America Corporation Semiconductor manufacturing method
US6976904B2 (en) 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
US6103456A (en) 1998-07-22 2000-08-15 Siemens Aktiengesellschaft Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication
US6071662A (en) 1998-07-23 2000-06-06 Xerox Corporation Imaging member with improved anti-curl backing layer
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6380611B1 (en) 1998-09-03 2002-04-30 Micron Technology, Inc. Treatment for film surface to reduce photo footing
US6410209B1 (en) 1998-09-15 2002-06-25 Shipley Company, L.L.C. Methods utilizing antireflective coating compositions with exposure under 200 nm
US6361833B1 (en) 1998-10-28 2002-03-26 Henkel Corporation Composition and process for treating metal surfaces
US6165695A (en) 1998-12-01 2000-12-26 Advanced Micro Devices, Inc. Thin resist with amorphous silicon hard mask for via etch application
US6162587A (en) 1998-12-01 2000-12-19 Advanced Micro Devices Thin resist with transition metal hard mask for via etch application
US6127070A (en) 1998-12-01 2000-10-03 Advanced Micro Devices, Inc. Thin resist with nitride hard mask for via etch application
US6020269A (en) 1998-12-02 2000-02-01 Advanced Micro Devices, Inc. Ultra-thin resist and nitride/oxide hard mask for metal etch
US6200907B1 (en) 1998-12-02 2001-03-13 Advanced Micro Devices, Inc. Ultra-thin resist and barrier metal/oxide hard mask for metal etch
US6306560B1 (en) 1998-12-02 2001-10-23 Advanced Micro Devices, Inc. Ultra-thin resist and SiON/oxide hard mask for metal etch
US6171763B1 (en) 1998-12-02 2001-01-09 Advanced Micro Devices, Inc. Ultra-thin resist and oxide/nitride hard mask for metal etch
US6156658A (en) 1998-12-02 2000-12-05 Advanced Micro Devices, Inc. Ultra-thin resist and silicon/oxide hard mask for metal etch
US6309926B1 (en) 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6046112A (en) 1998-12-14 2000-04-04 Taiwan Semiconductor Manufacturing Company Chemical mechanical polishing slurry
US6207238B1 (en) 1998-12-16 2001-03-27 Battelle Memorial Institute Plasma enhanced chemical deposition for high and/or low index of refraction polymers
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
KR100363695B1 (ko) 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
US6136511A (en) 1999-01-20 2000-10-24 Micron Technology, Inc. Method of patterning substrates using multilayer resist processing
US6136679A (en) 1999-03-05 2000-10-24 Taiwan Semiconductor Manufacturing Company Gate micro-patterning process
US6316165B1 (en) 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6616692B1 (en) 1999-04-30 2003-09-09 Advanced Medical Optics, Inc. Intraocular lens combinations
US6458509B1 (en) 1999-04-30 2002-10-01 Toagosei Co., Ltd. Resist compositions
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6110653A (en) 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
JP4512217B2 (ja) 1999-08-20 2010-07-28 富士フイルム株式会社 アリールシラン化合物、発光素子材料およびそれを使用した発光素子
JP5079959B2 (ja) 1999-08-26 2012-11-21 ブルーワー サイエンス アイ エヌ シー． デュアル・ダマシンプロセス用の改良された充填物質
US6852473B2 (en) 2000-01-12 2005-02-08 Infineon Technologies Richmond, Lp Anti-reflective coating conformality control
US20020009599A1 (en) 2000-01-26 2002-01-24 Welch Cletus N. Photochromic polyurethane coating and articles having such a coating
TW439118B (en) 2000-02-10 2001-06-07 Winbond Electronics Corp Multilayer thin photoresist process
KR100610406B1 (ko) 2000-02-22 2006-08-09 브레우어 사이언스 인코포레이션 화학적 증착에 의해 증착된 유기 중합체 반사 방지 코팅
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP2001338926A (ja) 2000-05-29 2001-12-07 Sony Corp 半導体装置の製造方法
JP2001344732A (ja) 2000-05-29 2001-12-14 Fujitsu Ltd 磁気記録媒体用基板及びその製造方法、並びに磁気記録媒体の評価方法
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
KR100917101B1 (ko) 2000-08-04 2009-09-15 도요 보세키 가부시키가이샤 플렉시블 금속적층체 및 그 제조방법
WO2002025374A2 (en) 2000-09-19 2002-03-28 Shipley Company, L.L.C. Antireflective composition
US6455416B1 (en) 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
US20030054117A1 (en) 2001-02-02 2003-03-20 Brewer Science, Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US6444582B1 (en) 2001-02-05 2002-09-03 United Microelectronics Corp. Methods for removing silicon-oxy-nitride layer and wafer surface cleaning
US6309955B1 (en) 2001-02-16 2001-10-30 Advanced Micro Devices, Inc. Method for using a CVD organic barc as a hard mask during via etch
US6852828B2 (en) 2001-02-16 2005-02-08 Medtronic, Inc. Poly amic acid system for polyimides
US6383952B1 (en) 2001-02-28 2002-05-07 Advanced Micro Devices, Inc. RELACS process to double the frequency or pitch of small feature formation
TW576859B (en) 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
US6680252B2 (en) 2001-05-15 2004-01-20 United Microelectronics Corp. Method for planarizing barc layer in dual damascene process
EP1395417B1 (en) 2001-05-29 2006-08-02 Essilor International Compagnie Generale D'optique Method for forming on-site a coated optical article
US6605545B2 (en) 2001-06-01 2003-08-12 United Microelectronics Corp. Method for forming hybrid low-K film stack to avoid thermal stress effect
US6458705B1 (en) 2001-06-06 2002-10-01 United Microelectronics Corp. Method for forming via-first dual damascene interconnect structure
US6548387B2 (en) 2001-07-20 2003-04-15 United Microelectronics Corporation Method for reducing hole defects in the polysilicon layer
US6624068B2 (en) 2001-08-24 2003-09-23 Texas Instruments Incorporated Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography
US6586560B1 (en) 2001-09-18 2003-07-01 Microchem Corp. Alkaline soluble maleimide-containing polymers
WO2003027178A2 (en) 2001-09-27 2003-04-03 Lg Chem Ltd. Polyimide copolymer and methods for preparing the same
KR100465866B1 (ko) 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US6916537B2 (en) 2001-11-01 2005-07-12 Transitions Optical Inc. Articles having a photochromic polymeric coating
JP2003162065A (ja) 2001-11-26 2003-06-06 Mitsubishi Electric Corp 露光装置、露光マスク、露光方法、表示装置及び電子部品
JP3773445B2 (ja) 2001-12-19 2006-05-10 セントラル硝子株式会社 含フッ素脂環族ジアミンおよびこれを用いた重合体
US20030215736A1 (en) 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US7070914B2 (en) 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US7261997B2 (en) 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
US6488509B1 (en) 2002-01-23 2002-12-03 Taiwan Semiconductor Manufacturing Company Plug filling for dual-damascene process
KR20030068729A (ko) 2002-02-16 2003-08-25 삼성전자주식회사 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법
US6911293B2 (en) 2002-04-11 2005-06-28 Clariant Finance (Bvi) Limited Photoresist compositions comprising acetals and ketals as solvents
US6852474B2 (en) 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US6849293B2 (en) 2002-05-02 2005-02-01 Institute Of Microelectronics Method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process
US7265431B2 (en) 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US6872506B2 (en) 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6638853B1 (en) 2002-07-03 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for avoiding photoresist resist residue on semioconductor feature sidewalls
KR20040009384A (ko) 2002-07-23 2004-01-31 삼성전자주식회사 포토레지스트용 현상액에 용해되는 유기 바닥 반사 방지조성물과 이를 이용한 사진 식각 공정
US7108958B2 (en) 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
US6566280B1 (en) 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US20040077173A1 (en) 2002-10-17 2004-04-22 Swaminathan Sivakumar Using water soluble bottom anti-reflective coating
JP3675789B2 (ja) * 2002-10-25 2005-07-27 東京応化工業株式会社 微細パターンの形成方法
US7507783B2 (en) 2003-02-24 2009-03-24 Brewer Science Inc. Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process
KR100487948B1 (ko) 2003-03-06 2005-05-06 삼성전자주식회사 이중 다마신 기술을 사용하여 비아콘택 구조체를 형성하는방법
KR100539494B1 (ko) 2003-05-02 2005-12-29 한국전자통신연구원 전기광학 및 비선형 광학 고분자로서의 곁사슬형폴리아미드 에스테르, 그것의 제조 방법 및 그것으로부터제조된 필름
US7235348B2 (en) 2003-05-22 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
JP4796498B2 (ja) 2003-05-23 2011-10-19 ダウ コーニング コーポレーション 高い湿式エッチング速度を持つシロキサン樹脂系反射防止被覆組成物
US7364832B2 (en) 2003-06-11 2008-04-29 Brewer Science Inc. Wet developable hard mask in conjunction with thin photoresist for micro photolithography
JP4173414B2 (ja) 2003-08-28 2008-10-29 東京応化工業株式会社 反射防止膜形成用組成物およびレジストパターンの形成方法
US7074527B2 (en) 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
KR101189397B1 (ko) 2003-10-15 2012-10-11 브레우어 사이언스 인코포레이션 비아-퍼스트 듀얼 다마신 적용예에서 사용되는 현상제에 용해성인 물질 및 상기 물질 사용 방법
US7636130B2 (en) 2003-10-22 2009-12-22 Darwin Chang Television with automatic input switching
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20070207406A1 (en) 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
JP5002262B2 (ja) * 2004-05-07 2012-08-15 株式会社カネカ 硬化性組成物
US7012028B2 (en) 2004-07-26 2006-03-14 Texas Instruments Incorporated Transistor fabrication methods using reduced width sidewall spacers
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR100639680B1 (ko) 2005-01-17 2006-10-31 삼성전자주식회사 반도체 소자의 미세 패턴 형성방법
US7390746B2 (en) * 2005-03-15 2008-06-24 Micron Technology, Inc. Multiple deposition for integration of spacers in pitch multiplication process
US20070018286A1 (en) 2005-07-14 2007-01-25 Asml Netherlands B.V. Substrate, lithographic multiple exposure method, machine readable medium
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7776744B2 (en) * 2005-09-01 2010-08-17 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
TWI403843B (zh) 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
US7824842B2 (en) 2005-10-05 2010-11-02 Asml Netherlands B.V. Method of patterning a positive tone resist layer overlaying a lithographic substrate
KR20070087356A (ko) 2006-02-23 2007-08-28 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US20070212649A1 (en) 2006-03-07 2007-09-13 Asml Netherlands B.V. Method and system for enhanced lithographic patterning
US20090102971A1 (en) 2006-03-08 2009-04-23 Westinghouse Digital Electronics, Llc Method and apparatus for automatic startup and shutdown including automatic source switching
US7767385B2 (en) 2006-03-09 2010-08-03 International Business Machines Corporation Method for lithography for optimizing process conditions
EP1845416A3 (en) 2006-04-11 2009-05-20 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for photolithography
US7429533B2 (en) 2006-05-10 2008-09-30 Lam Research Corporation Pitch reduction
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4826805B2 (ja) 2006-08-30 2011-11-30 信越化学工業株式会社 フォトレジスト下層膜材料、フォトレジスト下層膜基板及びパターン形成方法
US7862985B2 (en) 2006-09-22 2011-01-04 Tokyo Electron Limited Method for double patterning a developable anti-reflective coating
US8168372B2 (en) 2006-09-25 2012-05-01 Brewer Science Inc. Method of creating photolithographic structures with developer-trimmed hard mask
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
KR20100014830A (ko) * 2007-02-26 2010-02-11 제이에스알 가부시끼가이샤 미세 패턴 형성용 수지 조성물 및 미세 패턴 형성 방법
JP5671202B2 (ja) 2007-10-26 2015-02-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ フォトレジストテンプレートマスクを用いて頻度を倍にする方法
US8133659B2 (en) 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
WO2009114244A2 (en) * 2008-03-11 2009-09-17 Lam Research Corporation Line width roughness improvement with noble gas plasma
US7713818B2 (en) * 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US10151981B2 (en) * 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8492282B2 (en) * 2008-11-24 2013-07-23 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804099B2 (en) 2014-11-24 2020-10-13 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
TWI682056B (zh) * 2016-07-29 2020-01-11 美商蘭姆研究公司 用於半導體圖案化應用之摻雜的原子層沉積膜
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10658172B2 (en) 2017-09-13 2020-05-19 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis

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EP2374145A2 (en) 2011-10-12
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