TWI380129B - High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method - Google Patents

Description

IX. INSTRUCTIONS: TECHNICAL FIELD OF THE INVENTION C FIELD OF THE INVENTION The present invention relates to a hard mask composition having anti-reflective properties suitable for use in lithography. More particularly, the present invention relates to a hard mask composition comprising an aromatic ring-containing polymer which is strongly absorbed in short wavelength regions (e.g., 157 nm, 193 nm, and 248 nm). C Prior Art; J BACKGROUND OF THE INVENTION The manufacture of microelectronics and other related industries, including microstructures (e.g., micromachines and magnetoresistive heads), continues to require a reduction in the size of the structural shaped bodies. In the microelectronics industry, there is a need to reduce the size of microelectronic components, thereby providing multiple circuits of a given wafer size. Effective lithography is necessary to achieve size reduction of the structural shaped body. The effect of lithography is the fabrication of the structure due to the direct imaging pattern on the special substrate and the fabrication of a mask typically used for such imaging. A typical lithography process involves exposing a full image of a radiation-sensitive mask to imaging radiation to form a patterned mask layer. Subsequently, development is carried out by contacting the exposed mask s with certain substances, typically aqueous experimental development solutions. The material present in the opening of the patterned mask layer is then etched to transfer the pattern to the underlying material. After the transfer is completed, the remaining portion of the barrier layer is removed. In most lithography processes, in order to obtain better resolution, ▲ shot coating (ARC) is used to reflect the reflectivity between a thin imaging layer such as a layer of light-sensitive resist material and the underlayer. However, after the patterning, the portions of the plurality of imaging layers are removed during the etching of the ARC, so patterning is required in the subsequent etching step. In some lithography imaging methods, the mask used does not provide sufficient resistance to subsequent etching steps to the extent that it is effective to transfer the desired pattern to a layer below the mask. For practical applications (for example, in the case where an extremely thin barrier layer is required, a large residual depth is required after etching the underlying material, and/or depending on the type of material below, a special etchant is required) A so-called "hard mask layer" is used as an intermediate layer between the patterned mask layer and the underlying material that can be patterned by transfer by the patterned mask. The hard mask layer must be compatible with the pattern from the patterned mask layer and endure the etching required to transfer the pattern to the underlying material. Although a variety of hard mask materials are known, an improved hard mask composition is still required. Since conventional hard mask materials are difficult to apply to substrates, chemical vapor deposition and physical vapor deposition, special solvents, and/or high temperature baking are required. However, such methods require not only the use of expensive equipment or the introduction of advanced technology, but also complex processing procedures, which results in a relatively high manufacturing cost of the components. Such a hard mask composition which can be applied by spin coating technique is preferred. Another preferred hard mask composition is that it is easy to selectively etch using the upper photoresist layer as a mask and to pattern the underlying metal compound or compound layer using a hard mask layer as a hard mask. The etching is resistant. Another preferred hard mask composition provides excellent storage properties and avoids negative interactions with the imaged barrier layer (e.g., acid contamination from a hard mask). Another preferred hard mask composition for shorter wavelengths (eg 157 nm, 193 nm, and 248 nm) 1380129

The imaging radiation has special optical properties. There are still a number of technical difficulties in patterning a relatively thick underlayer by dry etching. For example, the top hard mask layer formed by spin coating has an isotropic (e.g., bowed) etch profile during dry etching, making it difficult to allow the hard mask layer to function as a hard mask as a relatively thick underlayer. Attempts to prevent the occurrence of isotropic etch profiles, for example, by changing the dry etch conditions. However, component manufacturing still has limitations in the operation of large-scale manufacturing plants. In such cases, the inventors attempted to prepare a high density network polymer having a high carbon content in an amorphous structure which can be used to form a hard mask having an anisotropic profile. I. SUMMARY OF THE INVENTION Summary of the Invention The present invention has been made in view of the problems of the prior art, and it is an object of the present invention to provide a novel hard mask composition suitable for use in a photolithography method and having a high etching selectivity, which is sufficient for various etchings. Resistant, and can reduce the reflectivity between the mask and the lower layer. Another object of the present invention is to provide a method of patterning a layer of underlying material on a substrate using the hard mask composition. According to an aspect of the present invention, there is provided an antireflection hard mask composition comprising (a) an aromatic ring-containing polymer represented by any one of Formulas 1 to 3:

7 1380129 —CH — 4 wherein Ri is selected from —CH 2 — — ——— and R 2 and R 3 are each selected from the group consisting of hydrogen, hydroxy, CrC 1 (alkyl) C 6 —CI 0 aryl, propylene, and halogen, and Kn<750;

(2) —CH — 5 wherein R is selected from —CH 2 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Aryl, propenyl and halogen, and Kn<750; and ΟΗ-Rr(3)-CH- wherein r is selected from the group consisting of -ch2-, 10 and -CH-ό; and Βη<750 (b) And (c) an organic solvent. The hard mask composition of the present invention further comprises (d) - a crosslinking component and (e) - an acid catalyst. 8 In this case, the hard mask composition of the present invention contains 1 〇 / 〇 to 20% by weight of the aromatic ring-containing polymer (a), 0.001% to 5% by weight of the initiator (b), 75% To 98.8% by weight of the organic solvent (c) '0.1% to 5% by weight of the crosslinking component (d)' and 0.001% to 0.05% by weight of the acid catalyst (4). The hard mask composition of the present invention further comprises a smectite beta compound as the base catalyst (d). In this case, the hard mask composition of the present invention comprises a P/〇 to 20% by weight aromatic-containing polymer. (3) 0.001% to 5% by weight of the initiator (b), 75% to 98.8% by weight of the organic solvent (c), and 〇.001% to 5% by weight of the catalyst (d). The aromatic ring-containing polymer polymer preferably has a weight average molecular weight of 1,000 to 30,000. The hard mask composition of the present invention further comprises a surfactant. The starter may be selected from the group consisting of peroxides, persulfates, azo compounds, and mixtures thereof. The parent component may be selected from the group consisting of etherified amine based resins, alkoxyalkyl melamine resins, alkyl urea resins, glycoluril derivatives, 2,6-fluorene (transmethyl)- a group consisting of a double epoxy compound and a mixture thereof. The acid catalyst may be selected from the group consisting of p-toluenesulfonic acid monohydrate, p-toluene pyridinium, 2,4,4,6-tetrabromocyclohexadienone, benzoic acid benzoin, terpene sulfonate. a group consisting of 2-nitro-t-ester esters, alkyl sulfonates of organic sulfonic acids, and mixtures thereof. In accordance with another aspect of the present invention, a method of forming a patterned layer of material on a substrate using the hard mask composition is provided. In particular, the method of the present invention comprises the steps of: (a) providing a layer of material on a substrate' (b) forming an anti-reflective hard mask layer on the layer of material using the hard mask composition, (c) Forming a radiation-sensitive imaging layer on the anti-reflective hard mask layer (d) exposing the full image of the radiation-sensitive imaging layer to radiation to form a pattern of the radiation exposure region in the imaging layer, (e) selectively removing A portion of the radiation-sensitive imaging layer and the anti-reflective hard mask layer expose a portion of the material layer, and (f) etch the exposed portion of the material layer to pattern the material layer. The method of the present invention further comprises the step of forming a hard mask layer using a ruthenium-containing composition prior to step (c). The method of the present invention further comprises the step of forming a bottom anti-reflective coating (BARC) on the tantalum-containing hard mask layer prior to step (0). According to still another aspect of the present invention, a method of manufacturing using the method is provided. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Further details of specific embodiments of the present invention will now be described. The present invention provides an anti-reflective hard mask group, comprising (a) The short-wavelength region (for example, 193 nm and nano-nano) has a strong absorption of the aromatic ring-containing polymer '(9) one material and (4) - an organic solvent.

1380129 wherein Ri is selected from the group consisting of -CH2-, -CH-4 and -CH-; R2 and R3 are each selected from the group consisting of hydrogen, hydroxy, CrC1G alkyl C6-C10 aryl, propylene and halogen, and Kn<;750;

(2) -CH - 5 wherein R is selected from -CH2-, _Η2 <: η〇μ' and 0; r4 is selected from hydrogen, hydroxy, crc1() alkyl, c6-c1() aryl propyl a dilute group and a halogen, and 1 < η <750; and 0 Η - Rr (3) - CH - wherein Rt is selected from -CH 2 - H 2 C - u ~ CH 2 - _ 10 and - CH - ό ; and Κ η < 750 Preferably, the aromatic ring-containing polymer contains an aromatic ring in the polymer backbone. Preferably, the aromatic ring-containing polymer has a plurality of reaction sites which are reactive with the crosslinking component and which are distributed along the polymer backbone. Further, the hard mask composition of the present invention must have a solution forming property and a film forming property, and can assist in the formation of a layer of β by the conventional spin coating technique. The hard mask composition of the present invention satisfies all of the foregoing requirements. Polymer blends of the formulae 1, 2 and 3 constituting the polymer and copolymers constituting the units of the polymers (i.e., monomers) can also be used in the present invention. The aromatic ring-containing polymer preferably has a weight average molecular weight of from 10,000 to 30,000. Preferably, the aromatic ring-containing polymer (4) is used in an amount of from 1 to 30 parts by weight based on the weight of the organic solvent (4). When the amount of the aromatic-containing polymer is less than 1 part by weight or more than 30 parts by weight, the desired coating thickness is not achieved (i.e., it is difficult to accurately adjust the coating thickness). The type of the starter (8) is not particularly limited as long as the starter is allowed to be thermally crosslinked immediately after coating, and the ethylene group P containing the aromatic ring polymer (4) can be thermally crosslinked to be suitable for use in the present invention. Examples of the starter include peroxides, persulfates, and even I compounds. The initiators may be used singly or in combination of two or more. The type of the organic solvent (c) is not particularly limited as long as the aromatic ring-containing poly (a) is sufficiently soluble in the organic solvent (c). As for the appropriate organic solvent, it is worth mentioning that propylene glycol monomethyl ether acetate (PGmea), propylene glycol monodecyl ether (PGME), cyclohexanone and ethyl lactate (EL). The starter is activated upon heating to crosslink the vinyl groups of the polymer. In other words, the initiator is decomposed by heat to form a reactive group, and the reactive group attacks the monomer having a vinyl group to crosslink the vinyl group. The antireflective hard mask composition of the present invention further comprises (d) a crosslinked component and (e) an acid catalyst. 1380129 The organic solvent (c) used in the hard mask composition of the present invention is preferably a crosslinking component which is crosslinkable with a hydroxyl group of the polymer via the catalytic activity of the generated acid. Preferably, the acid catalyst (e) is activated by heating. The thermally activated acid catalyst catalyzes the crosslinking of the cross-linking component with the inter-base of the polymer. In other words, the thermally activated acid catalyst promotes the cross-linking function of the cross-linking component for crosslinking the radicals inside the polymer and between adjacent polymer molecules.

Any of the cross-linking components which can be reacted with the hydroxyl group of the aromatic ring-containing polymer by the acid catalyzed reaction can be used in the present invention without particular limitation. Specific examples of suitable cross-linking components for use in the hard mask composition of the present invention include: oxime-based amine resins' alkoxyalkyl melamine resins (e.g., N-methoxymethyl-melamine resins and N-butoxymethyl-melamine resin), alkyl urea resin (such as Cymel U-65 resin and UFR 80 resin), glycine derivative (for example, Powderlink of Formula 4) Ll74), 2,6-anthracene (hydroxymethyl)-p-anthracene and a double epoxy compound. 2

CH30CH CH2OCH3 0=Κ Αμ )=〇

Ch3och2 CH20CH3 15 (4). As the acid catalyst (e), an organic acid such as p-toluenesulfonic acid monohydrate can be used. In order to obtain improved storage stability, a thermal acid generator (TAG) compound can be used as the acid catalyst (e). TAG is a compound which produces an acid when heat treated. Preferred TAGs include p-benzoquinone acid pyridine, 2,4,4,6-tetrabromocyclo 20 hexadienol, toluene benzoate, 2-nitrobenzyl tosylate, organic acid Married esters, and mixtures thereof. Other radiation-sensitive acid catalysts known in the art of enamel can also be used as long as they are compatible with the other components of the anti-reflective composition. In the hard mask composition of the present invention, the aromatic ring-containing polymer (a) which is strongly absorbed in the short-wavelength region is preferably present in an amount of from 1% to 20% by weight and more preferably from 3% to 10% by weight. The starting agent (b) is preferably present in an amount of from 1% to 5% by weight and more preferably from 0. 01% to 3% by weight, and the organic solvent (c) is preferably present in an amount of 75% by weight. The crosslinking component (d) is preferably present in an amount of from 0.1% to 5% by weight, more preferably from 1:1% to 3% by weight, based on the 98.8% by weight, and the preferred amount of the acid catalyst (e). It is 0.001% to 0.05% by weight and more preferably 〇〇〇1% to 0.03% by weight. When the content of the aromatic ring-containing polymer is outside the range defined above, the desired coating thickness cannot be achieved (i.e., it is difficult to accurately adjust the coating thickness). When the amount of the initiator is less than 0.001% by weight, it does not have an appropriate crosslinking property. At the same time, when the content of the initiator is more than 5% by weight, some of the initiator may not be reacted, causing deformation of the pattern wheel and intermingling with the interface of the photoresist or the second hard mask. The optical properties change. When the content of the crosslinking component is less than 0.1% by weight, there is no crosslinking property. At the same time, when the content of the cross-linking component is more than 5% by weight, deformation of the pattern profile may occur, and the presence of volatile components during baking may cause contamination of re-deposition. When the content of the acid catalyst is less than 0.001% by weight, there is no crosslinking property. Meanwhile, when the content of the acid catalyst exceeds 05% by weight, the stability of the storage may be adversely affected due to an increase in acidity. When the content of the organic solvent is outside the range defined above, the desired coating thickness cannot be achieved (i.e., it is difficult to accurately adjust the coating thickness). 1380129 The hard mask composition of the present invention further comprises a sodium salium compound as (d) a catalyst. The base catalyst is activated upon heating to crosslink the hydroxyl groups and terminal methoxy groups in the interior of the polymer and between adjacent polymer molecules. Examples of the base catalyst include 2-methyl-5-imidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, and 2-phenylimidazole. . The hard mask composition of the present invention comprises 1% to 20% by weight of the aromatic ring-containing polymer (4), 0.001% to 5% by weight of the initiator 0), 75% to 98.8% by weight of the organic solvent (c), and 0.001% to 5% by weight of the base catalyst (d). When the content of the alkali catalyst is less than 0.001% by weight, the crosslinking effect is insufficient, and as a result, the mixing with the upper material may be induced, so that it is difficult to form a pattern image. Meanwhile, when the content of the alkali catalyst is more than 5% by weight, a part of the initiator may be unreacted, resulting in a problem of poor storage stability. The hard mask composition of the present invention further comprises a surfactant. 15 The present invention also provides a method of patterning a layer of a material layer on a substrate using the hard mask composition. In particular, the method of the present invention comprises the steps of: (providing a material layer on a substrate, (b) using the hard mask composition to form an anti-reflective hard mask layer on the material layer '(c) forming a radiation sensitive imaging layer on the antireflective hard mask layer, (d) the radiation The entire image of the sensitive imaging layer is exposed to radiation to form a pattern of the radiation exposure region in the imaging layer (the magically selective removal portion of the radiation sensitive imaging layer and the anti-reflective hard mask layer to expose a portion of the material layer, and f) etching the exposed portion of the layer of material to pattern the layer of material. / 15 The method further comprises the step of forming a tantalum-containing hard mask layer prior to step (c). The method of the invention is further included in the step (c) Before the step of forming a bottom anti-reflective coating (BARC) on the tantalum-containing hard mask layer. The method of the present invention can be carried out according to the following procedure: The first material to be patterned, such as aluminum or tantalum nitride ( MN) borrowed Applying to the substrate by technique. As for the material to be patterned, a conductive material, a semiconductive material, a magnetic material or an insulating material may be used. Subsequently, the hard mask composition of the present invention is spin-coated to 5 〇〇 to 4,000. A thickness of angstroms, and dried at 10 〇 _3 〇〇〇 c for 1 至 to 1 〇 to form a hard mask layer. A radiation-sensitive imaging layer is formed on the hard mask layer. The formed pattern is exposed through the image forming layer. Subsequently, the image forming layer and the anti-reflective layer are selectively removed to expose a portion of the material layer, and then dry etched using a gas such as a mixed gas of CHFs/CF4. After the patterned material layer is formed, The remaining portion of the mask is removed using a conventional photoresist remover. The semiconductor integrated circuit component can be provided by using the method of the present invention. 15 Thus, the composition of the present invention and the lithography structure formed using the composition of the present invention can be used. Fabrication and design of integrated circuit components according to substantially semiconductor fabrication methods. For example, the compositions of the present invention can be used to form patterned material layer structures, such as metal wiring, contacts. And through holes, insulating sections (such as inlaid trenches (DT)) and shallow channel insulation (STI) and trenches for capacitor structures. 20 It should be understood that the present invention is not limited to any particular lithography technique and component structure. Further details of the invention are illustrated by the following examples, but these examples are for illustrative purposes only and are not intended to limit the scope of the invention. Examples [Synthesis Example 1] 16 (GPC) was determined in tetrahydrofuran. The copolymer had a molecular weight of 12,000 and a polymerization divergence of 2.3. [Synthesis Example 3] (Synthesis of a copolymer of a vinylphenol and a 1,4-mercaptomethoxyphenylbenzene) The procedure of Synthesis Example 1 was repeated, but using 120.15 g ( Instead of 445.58 g (1_〇mol) 4,4'·(9-fluorenylene)divinylphenol, 1 mole of vinyl phenol was used to obtain a polymer of formula 7.

(7) The molecular weight and polymerization divergence of the copolymer were determined by gel permeation chromatography (GPC) in tetrahydrofuran. As a result, it was found that the copolymer had a molecular weight of ruthenium, osmium and a polymerization degree of 2.2 Å [Examples 1 to 3] Each of 0.8 g of the polymer prepared in Synthesis Example 1 to Synthesis Example 3, 〇〇8 g of 2,2'-arsenazo Isobutyronitrile (ΑΙΒΝ) as a starter, 〇 2 g of cross-linking agent (buccal forest 15 g 1 丨 74, formula 4) and 2 mg p-benzoic acid η than bite iron dissolved in 9 g of propyl ether A sample solution was prepared by filtration of acetate (PGMEA). alcohol

The sample solution was spin-dried at 200 ° C for 6 sec to the 4,000 angstrom film. The refractive index (η) and extinction coefficient (k) of the film are ellipses 18 1380129

Woollam) measurement. The results are shown in Table 1. As a result, it was revealed that the film had a refractive index and an absorption ratio suitable as the antireflection film of 193 nm (ArF) and 248 nm (KrF), but the film formed in Example 3 had an extremely low extinction coefficient of 248 nm. 5 [Examples 4 to 6]

0.8 g of each of the polymers prepared in Synthesis Example 1 to Synthesis Example 3, 8 g of 2,2'-azobisisobutyronitrile (AIBN) as a starter, and 0.008 g of 1_cathyl-2-phenyl The imidazole was dissolved in 9 g of propylene glycol monomethyl ether acetate (PGMEA) as a base catalyst and filtered to prepare a sample solution. 10 The sample solution is spin coated on a tantalum wafer at 200. (: baking for 60 seconds to form a film having a thickness of 4,000 angstroms. The refractive index (η) and extinction coefficient (k) of the film were measured using an ellipsometer (ja Woollam). The results are shown in Table 1. The results show that the film has suitable properties for use. The wavelengths of 193 nm (ArF) and 15 248 nm (KrF) are used as the refractive index and the light absorption ratio of the antireflection film. [Synthesis Example 4] (Amidinopyrene and 1,4-methoxymethylbenzene) Synthesis of Copolymer) The procedure of Synthesis Example 1 was repeated except that 393 50 g (1 mol) of decylene diphenol was used instead of 445.58 g (1.0 mol) 4,4'-(9-arylene)diethyl Based on the basics, 20 get the formula 8 polymer.

The molecular weight and degree of polymerization of the copolymer were determined by gel permeation chromatography 19 C) in tetrahydrofuran. As a result, the copolymer was found to have a molecular weight of 14, and a polymerization divergence of 25. [Comparative Example 1], the film was reduced in the same manner as in Example 3, except that the polymer prepared in Synthesis 14 was used. The refractive index (η) and extinction coefficient (k) of the film were measured. The results are shown in Table 1. ~ Table 1 Samples for film formation Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 < Comparative Example 1 Optical properties (193 nm) Refractive index (η) Extinction coefficient (k) 9 2 5 8 2 3 4 ·4·4·44·44 4 1 1 1 1 1 1 1 8 2 5 7 15 0 6 3 7 6 3 7 7 0·0·0·0·0·0·0· Optical properties (248nai m) refractive index (η) extinction coefficient (k) 1.91 0.21 2.12 0.30 1.82 0.05 1.90 0.23 2.11 0.31 1.81 0.04 1.97 0.27 [Examples 7 to 12] Each of the sample solutions prepared in Example 116 was spin-coated to nitriding; The covered wafer was baked and dried at 200 ° C for 60 seconds to form a film having a thickness of 4 Å. An anti-reflective coating (ARC) was formed on the film and baked at 240 ° C for 60 seconds. Subsequently, ArF photoresist (PR) was applied to a thickness of 1,70 angstroms on 矽ARC, and dried for 16 seconds at ll 〇 °C, exposed using an ArF exposure system (ASML, χτ: 14 〇〇, NA 0.93). And developed with TMAH (2.38 wt%) to form a nanowire and inter-pattern. The pattern is measured by field emission scanning electron microscopy (FE-SEM). The pattern is measured as a function of the exposure energy as a function of the exposure latitude (EL) margin and the focal depth (DoF) margin as a function of distance from the source. The results are reported in Table 2. 20 1380129 [Comparative Example 2] Patterns were formed in the same manner as in Examples 1 to 6, except that the sample solution prepared in Comparative Example 1 was used. Observe the contour data of the pattern. The exposure latitude (EL) and depth of focus (DoF) of the pattern were measured. The results are shown in Table 2. Results There was no significant difference in the pattern profile and margin between the patterns formed in Examples 1 to 6 and Comparative Example 2. Table 2 Sample pattern properties used in film formation EL margin (ΔmJ/exposure to mJ) DoF margin (μm) Profile Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Comparative Example 2 4 4 4 4 4 4 4 0.25 0.25 0.25 0.25 0.25 0.25 0.25 cubic cube cube cube cube cube 10 [Examples 13 to 18] Each patterned test piece 矽A RC (Examples 7 to 12 and Comparative Example 2) was passed through a photoresist The mask was dry etched using a mixed gas of cHF3/Cf4. The hard cover is passed through the Shih ARC as a mask, using a mixture of ostrich dry etching. Subsequently, the tantalum nitride system was dry-etched using a hard mask as a mask using a mixed gas of 15 CH^/CF4. Oxygen ashing and wet stripping of the rest of the hard mask and organic materials. The results of observing the cross section of the test piece using FE SEM after the hard mask and tantalum nitride etching are shown in Table 3. The etched patterns all show good profile data. The reason why the tantalum nitride is well etched 21 1380129 is because the hard mask is sufficiently resistant to the gas. [Comparative Example 3] The s-type test piece formed in Comparative Example 2 was etched according to the procedures described in Examples 7 to 1] to form a pattern. The pattern was observed and the results are shown in Table 3. After the hard mask etch, the pattern shows isotropic (bending) etch profile data. Isotropic etch profile data is believed to cause patterning of the pattern during tantalum nitride etching.

Table 3 Pattern shape after tantalum nitride etching + vertical (anisotropic) stomach vertical (anisotropic) vertical (anisotropic) vertical (anisotropic) vertical (anisotropic) vertical (anisotropic) cone ^Thin film formation for hard samples_pattern makeup_Example 13 Vertical (anisotropic) Example 14 Vertical (anisotropic) Example 15 Vertical (transverse) Example 16 Vertical (anisotropic) Example 17 Vertical (anisotropic) Example 18 Vertical (anisotropic) Comparative Example 3_^ Bow, 10 It is apparent from the foregoing that the anti-reflective hard mask composition of the present invention can be used to form a suitable deep ultraviolet light (DUV). A film of the refractive index and the light absorption ratio of the antireflection film of the region (for example, ArF (193 nm) and KrF (248 nm)). Therefore, the anti-reflective hard mask composition of the present invention has high selectivity to lithography. Furthermore, since the anti-reflective hard mask composition of the present invention is sufficiently resistant to multiple etching, it can be used to form a hard mask having an excellent etching profile. Therefore, a good image can be transferred to the bottom layer. In addition, the anti-reflective hard mask composition of the present invention can reduce the reflectance between the mask and the underlayer, so that it can be used to provide a lithography structure with a preferred pattern of 22 1380129 in terms of pattern outline and margin. I: Simple description of the figure 3 (none) [Explanation of main component symbols] (none)

twenty three

Claims (1)

1380129 Patent application No. 096148919 Patent application scope Replacement period: January, 2011, January 17, 10, application patent scope: 1. An anti-reflective hard mask composition comprising (a) represented by formula 1 or 3. Aromatic ring-containing polymer: OH OH (1) 10 —CH——CH— and ^^ ; R 2 and R 3 are each selected from the group consisting of nitrogen, a thiol group, a Ci_Ci oxime group, a C6-Ci aryl group, a propyl group, and a halogen, and Κη<750; and OH. The lanthanide is selected from -ch2- _H2C-^-ch2_ _H2C_〇kh〇_CH2' And 1 < η <750; (b) - an initiator, and (c) an organic solvent. 2. The hard mask composition of claim 1 further comprising (d) a cross-linking component and (e) an acid catalyst. 3. The hard mask composition of claim 2, wherein the composition comprises 1% to 20% by weight of the aromatic ring-containing polymer (a), and 0.001% to 5% by weight of the initiator (b) , 75% to 98.8% by weight of organic solvent (c), 24 15 1380129 Patent Application No. 096148919, the patent application scope is replaced by the present period: 101 0.1% to 5% by weight of cross-linking component (d), and 0.001% To 〇.〇5〇/. ^^^ ^ ϊ tt, acid catalyst (e). 4. The hard mask composition of claim 2, wherein the six X ^ component may be selected from the group consisting of etherified amine based resins, alkoxyalkyl melamine tree guanidine 5 alkyl urea resins , a group consisting of a glycoluril derivative, a 2,6·anthracene (hydroxymethyl)-p-type, a methyl-formed diepoxide, and a mixture thereof. 5. For the hard mask composition of claim 2, the application of the catalyst can be selected from the group consisting of p-toluenesulfonic acid monohydrate, p-toluene, pyridine, 2,4,4,6. a group of tetrabromocyclohexadienone, benzoic acid benzoin, 2-nitrobenzyl sulfonate 10 sulfonate, an alkyl sulfonate of an organic sulfonic acid, and mixtures thereof. 6. The hard mask composition of claim 1 further comprising an imidazole compound as the base catalyst (d). 7_ The hard mask composition of claim 6, wherein the composition 15 comprises from 丨% to 20% by weight of the aromatic ring-containing polymer (a), and from 0.001% to 5% by weight of the starter (b) ), 75% to 98.8% by weight of the organic solvent (c), and 0.001% to 5% by weight of the base catalyst (4). 8. The hard mask composition of claim 1, wherein the aromatic ring-containing polymer has a weight average molecular weight of from 1, 〇〇〇 to 30,000. 20 9. The hard mask composition of claim 1, further comprising a surfactant. 10. The hard mask composition of claim 1, wherein the initiator is selected from the group consisting of peroxides, persulfates, azo compounds, and mixtures thereof. 25 11. A method of forming a layer of patterned material on a substrate. The method comprises the steps of: (a) providing a layer of material on a substrate, and (9) using any of items 1 to 10 of the scope of the patent application; A hard mask composition for forming an anti-reflective hard mask layer on the material layer, (C) forming a radiation-sensitive imaging layer on the anti-reflective hard mask layer, (d) Exposing a full image of the light-sensitive imaging layer to radiation to form a pattern of radiation exposed regions in the imaging layer, (e) selectively removing portions of the radiation-sensitive imaging layer and the anti-reflective hard mask layer to expose A portion of the material layer, and (f) the exposed portion of the layer of material is patterned to pattern the layer of material. 12. The method of claim 5, further comprising the step of forming a hard mask layer using a ruthenium-containing composition prior to step (c). 13. The method of claim 12, further comprising the step of forming a bottom anti-reflective coating (B ARC) on the tantalum-containing hard mask layer prior to step (c). A semiconductor integrated circuit component manufactured by the method of any one of the above claims.