TW200834236A - High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method - Google Patents

High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method

Info

Publication number
TW200834236A
TW200834236A TW96148919A TW96148919A TW200834236A TW 200834236 A TW200834236 A TW 200834236A TW 96148919 A TW96148919 A TW 96148919A TW 96148919 A TW96148919 A TW 96148919A TW 200834236 A TW200834236 A TW 200834236A
Authority
TW
Taiwan
Prior art keywords
hardmask composition
composition
integrated circuit
material layer
semiconductor integrated
Prior art date
Application number
TW96148919A
Other languages
Chinese (zh)
Other versions
TWI380129B (en
Inventor
Chang-Il Oh
Dong-Seon Uh
Kyung-Hee Hyung
Min-Soo Kim
Jin-Kuk Lee
Jong Seob Kim
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200834236A publication Critical patent/TW200834236A/en
Application granted granted Critical
Publication of TWI380129B publication Critical patent/TWI380129B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Provided is a hardmask composition having antireflective properties that is suitable for lithography. The hardmask composition provides excellent characteristics in terms of optical properties and mechanical properties. In addition, the composition can be readily applied by spin-on application techniques. Particularly, the composition is highly resistant to dry etching. Therefore, the composition can be used to provide a multilayer thin film that is patterned with high aspect ratio. Further provided is a method for forming a pattern using the composition.
TW96148919A 2006-12-21 2007-12-20 High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method TWI380129B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060131851A KR100865684B1 (en) 2006-12-21 2006-12-21 High etch resistant hardmask composition having antireflective property, method of manufacturing of patterning materials and semiconductor ic device produced by the method

Publications (2)

Publication Number Publication Date
TW200834236A true TW200834236A (en) 2008-08-16
TWI380129B TWI380129B (en) 2012-12-21

Family

ID=39536445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96148919A TWI380129B (en) 2006-12-21 2007-12-20 High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method

Country Status (3)

Country Link
KR (1) KR100865684B1 (en)
TW (1) TWI380129B (en)
WO (1) WO2008075860A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101288573B1 (en) * 2009-08-03 2013-07-22 제일모직주식회사 High etch resistant hardmask composition having antireflective property with calixarene and Process of producing patterned materials by using the same
KR101344794B1 (en) 2009-12-31 2014-01-16 제일모직주식회사 Aromatic ring-containing polymer for resist　underlayer　and　resist underlayer composition　including　same
KR101777687B1 (en) * 2016-10-13 2017-09-12 영창케미칼 주식회사 Spin on carbon hardmask compositions with characteristics of high etch resistance and patterning method by using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100552914B1 (en) * 1998-07-10 2006-06-28 제일모직주식회사 Color resist resin composition
KR100557606B1 (en) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 Organic polymer used for removing random reflectivity
KR100520186B1 (en) * 2000-06-21 2005-10-10 주식회사 하이닉스반도체 Partially crosslinked polymer for bilayer photoresist
TWI278496B (en) * 2000-11-14 2007-04-11 Jsr Corp Anti-reflection coating forming composition
KR100519516B1 (en) * 2002-11-25 2005-10-07 주식회사 하이닉스반도체 Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same
JP3767552B2 (en) * 2002-12-26 2006-04-19 Ｊｓｒ株式会社 Radiation-sensitive composition, black matrix, color filter, and color liquid crystal display device
KR100570209B1 (en) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same
KR100655064B1 (en) * 2005-05-27 2006-12-06 제일모직주식회사 Hardmask composition having antireflective property

Also Published As

Publication number Publication date
TWI380129B (en) 2012-12-21
KR20080057927A (en) 2008-06-25
KR100865684B1 (en) 2008-10-29
WO2008075860A1 (en) 2008-06-26

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