KR20090116702A - 반도체 디바이스 - Google Patents

반도체 디바이스 Download PDF

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KR20090116702A
KR20090116702A KR1020097014376A KR20097014376A KR20090116702A KR 20090116702 A KR20090116702 A KR 20090116702A KR 1020097014376 A KR1020097014376 A KR 1020097014376A KR 20097014376 A KR20097014376 A KR 20097014376A KR 20090116702 A KR20090116702 A KR 20090116702A
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South Korea
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region
dielectric
semiconductor structure
type
terminal
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KR1020097014376A
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Korean (ko)
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모하메드 엔. 다위시
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맥스파워 세미컨덕터 인크.
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020097014376A 2007-01-09 2008-01-08 반도체 디바이스 Ceased KR20090116702A (ko)

Applications Claiming Priority (2)

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US87943407P 2007-01-09 2007-01-09
US60/879,434 2007-01-09

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KR20090116702A true KR20090116702A (ko) 2009-11-11

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Families Citing this family (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) * 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US8344451B2 (en) * 2007-01-09 2013-01-01 Maxpower Semiconductor, Inc. Semiconductor device
JP2008235788A (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
JP2009026809A (ja) * 2007-07-17 2009-02-05 Toyota Motor Corp 半導体装置とその製造方法
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US8710568B2 (en) * 2007-10-24 2014-04-29 Denso Corporation Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same
US8535996B2 (en) * 2008-03-13 2013-09-17 Soitec Substrate having a charged zone in an insulating buried layer
WO2009148695A2 (en) * 2008-06-02 2009-12-10 Maxpower Semiconductor Inc. Edge termination for semiconductor devices
US8310001B2 (en) * 2008-07-15 2012-11-13 Maxpower Semiconductor Inc. MOSFET switch with embedded electrostatic charge
US8901638B2 (en) 2008-07-25 2014-12-02 Nxp B.V. Trench-gate semiconductor device
US7960783B2 (en) * 2008-08-25 2011-06-14 Maxpower Semiconductor Inc. Devices containing permanent charge
US8022474B2 (en) * 2008-09-30 2011-09-20 Infineon Technologies Austria Ag Semiconductor device
TWI387106B (zh) * 2008-10-16 2013-02-21 Vanguard Int Semiconduct Corp 閘極絕緣雙接面電晶體(igbt)靜電放電防護元件
WO2010065427A2 (en) * 2008-12-01 2010-06-10 Maxpower Semiconductor Inc. Power device structures and methods
JP2010135594A (ja) * 2008-12-05 2010-06-17 Toyota Central R&D Labs Inc ダイオード
US8278691B2 (en) * 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US8049307B2 (en) * 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
US8319278B1 (en) 2009-03-31 2012-11-27 Maxpower Semiconductor, Inc. Power device structures and methods using empty space zones
US8847307B2 (en) * 2010-04-13 2014-09-30 Maxpower Semiconductor, Inc. Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
FR2945671A1 (fr) * 2009-05-18 2010-11-19 St Microelectronics Sa Photodiode a controle de charge d'interface et procede associe.
FR2945672A1 (fr) * 2009-05-18 2010-11-19 St Microelectronics Sa Photodiode a controle de charge d'interface par implantation et procede associe.
US8330214B2 (en) * 2009-05-28 2012-12-11 Maxpower Semiconductor, Inc. Power semiconductor device
US10205017B2 (en) * 2009-06-17 2019-02-12 Alpha And Omega Semiconductor Incorporated Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
WO2011008717A2 (en) * 2009-07-13 2011-01-20 Maxpower Semiconductor Inc. Integrated power supplies and combined high-side plus low-side switches
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US10026835B2 (en) * 2009-10-28 2018-07-17 Vishay-Siliconix Field boosted metal-oxide-semiconductor field effect transistor
DE102009051745B4 (de) * 2009-11-03 2017-09-21 Austriamicrosystems Ag Hochvolt-Transistor mit Mehrfach-Dielektrikum und Herstellungsverfahren
US8198678B2 (en) 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
WO2011087994A2 (en) * 2010-01-12 2011-07-21 Maxpower Semiconductor Inc. Devices, components and methods combining trench field plates with immobile electrostatic charge
WO2011109559A2 (en) 2010-03-02 2011-09-09 Kyle Terrill Structures and methods of fabricating dual gate devices
JP2011233701A (ja) * 2010-04-27 2011-11-17 Toshiba Corp 電力用半導体素子
US8390060B2 (en) 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
US8786012B2 (en) 2010-07-26 2014-07-22 Infineon Technologies Austria Ag Power semiconductor device and a method for forming a semiconductor device
US8614478B2 (en) 2010-07-26 2013-12-24 Infineon Technologies Austria Ag Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor
CN102403354A (zh) * 2010-09-15 2012-04-04 无锡华润上华半导体有限公司 Coo1MOS器件及其制造方法
CN102130182B (zh) * 2010-11-03 2012-11-21 绍兴旭昌科技企业有限公司 一种电流调整二极管芯片及其制造方法
CN102569384B (zh) * 2010-12-17 2015-07-01 无锡华润上华半导体有限公司 沟槽mosfet器件及其制作方法
US8841664B2 (en) * 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8754472B2 (en) * 2011-03-10 2014-06-17 O2Micro, Inc. Methods for fabricating transistors including one or more circular trenches
US8598654B2 (en) * 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
TW201240087A (en) * 2011-03-30 2012-10-01 Anpec Electronics Corp Power device with boundary trench structure
JP5729331B2 (ja) * 2011-04-12 2015-06-03 株式会社デンソー 半導体装置の製造方法及び半導体装置
CN102191563B (zh) * 2011-04-22 2012-09-19 中国科学院半导体研究所 共掺杂的硅基杂质中间带材料的制备方法
US8692318B2 (en) * 2011-05-10 2014-04-08 Nanya Technology Corp. Trench MOS structure and method for making the same
US8912595B2 (en) * 2011-05-12 2014-12-16 Nanya Technology Corp. Trench MOS structure and method for forming the same
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
JP5874893B2 (ja) * 2011-05-23 2016-03-02 サンケン電気株式会社 半導体装置
CN102420117A (zh) * 2011-06-07 2012-04-18 上海华力微电子有限公司 一种改善后栅极pmos负偏压温度不稳定性的方法
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US9984894B2 (en) * 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US9818859B2 (en) * 2011-08-26 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Quasi-vertical power MOSFET and methods of forming the same
US8816503B2 (en) * 2011-08-29 2014-08-26 Infineon Technologies Austria Ag Semiconductor device with buried electrode
CN102569091B (zh) * 2011-08-29 2014-07-23 上海华力微电子有限公司 一种后栅极单晶体管动态随机存储器的制备方法
CN103021853B (zh) * 2011-09-23 2015-11-11 北大方正集团有限公司 处理半导体器件的方法及半导体器件
JP5849882B2 (ja) * 2011-09-27 2016-02-03 株式会社デンソー 縦型半導体素子を備えた半導体装置
JP2013093560A (ja) * 2011-10-06 2013-05-16 Denso Corp 縦型半導体素子を備えた半導体装置
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
JP5685736B2 (ja) * 2012-02-10 2015-03-18 パナソニックIpマネジメント株式会社 半導体装置及びその製造方法
US9024379B2 (en) * 2012-02-13 2015-05-05 Maxpower Semiconductor Inc. Trench transistors and methods with low-voltage-drop shunt to body diode
CN102569411B (zh) * 2012-03-02 2014-12-03 成都芯源系统有限公司 半导体器件及其制作方法
CN103325685A (zh) * 2012-03-23 2013-09-25 无锡维赛半导体有限公司 深沟槽功率半导体场效应晶体管及其制作方法
TWM435716U (en) * 2012-04-13 2012-08-11 Taiwan Semiconductor Co Ltd The active region of the trench distributed arrangement of the semiconductor device structure
TWM439885U (en) * 2012-04-13 2012-10-21 Taiwan Semiconductor Co Ltd Semiconductor component trench structure
CN104380441A (zh) * 2012-04-30 2015-02-25 维西埃-硅化物公司 集成电路设计
US9099519B2 (en) * 2012-05-23 2015-08-04 Great Wall Semiconductor Corporation Semiconductor device and method of forming junction enhanced trench power MOSFET
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
JP2013251397A (ja) * 2012-05-31 2013-12-12 Denso Corp 半導体装置
US8921931B2 (en) * 2012-06-04 2014-12-30 Infineon Technologies Austria Ag Semiconductor device with trench structures including a recombination structure and a fill structure
JP6061504B2 (ja) * 2012-06-07 2017-01-18 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9293357B2 (en) 2012-07-02 2016-03-22 Texas Instruments Incorporated Sinker with a reduced width
US9130060B2 (en) 2012-07-11 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having a vertical power MOS transistor
US8669611B2 (en) * 2012-07-11 2014-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for power MOS transistor
US8829562B2 (en) * 2012-07-24 2014-09-09 Infineon Technologies Ag Semiconductor device including a dielectric structure in a trench
US8598655B1 (en) * 2012-08-03 2013-12-03 Infineon Technologies Dresden Gmbh Semiconductor device and method for manufacturing a semiconductor device
KR101920247B1 (ko) * 2012-09-17 2018-11-20 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9941403B2 (en) * 2012-09-26 2018-04-10 Infineon Technologies Ag Semiconductor device and method for manufacturing a semiconductor device
CN103854979B (zh) * 2012-11-28 2017-03-29 上海华虹宏力半导体制造有限公司 一种超级结外延cmp工艺方法
US9799762B2 (en) 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
CN103035745B (zh) * 2012-12-31 2016-01-20 杭州士兰集成电路有限公司 采用刻槽工艺形成的恒流二极管及其制造方法
US9853140B2 (en) * 2012-12-31 2017-12-26 Vishay-Siliconix Adaptive charge balanced MOSFET techniques
US9245994B2 (en) * 2013-02-07 2016-01-26 Texas Instruments Incorporated MOSFET with curved trench feature coupling termination trench to active trench
US8748976B1 (en) * 2013-03-06 2014-06-10 Texas Instruments Incorporated Dual RESURF trench field plate in vertical MOSFET
US9012984B2 (en) * 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
US9240476B2 (en) 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
CN103219386B (zh) * 2013-04-22 2016-01-20 南京邮电大学 一种具有高k绝缘区的横向功率器件
JP2014216573A (ja) * 2013-04-26 2014-11-17 株式会社東芝 半導体装置
US9000515B2 (en) * 2013-05-22 2015-04-07 Force Mos Technology Co., Ltd. Super-junction trench MOSFETs with short terminations
US9620637B2 (en) * 2013-05-24 2017-04-11 Infineon Technologies Ag Semiconductor device comprising a gate electrode connected to a source terminal
US9269713B2 (en) * 2013-06-04 2016-02-23 Infineon Technologies Austria Ag Semiconductor device and method for producing the same
US20150035002A1 (en) * 2013-07-31 2015-02-05 Infineon Technologies Austria Ag Super Junction Semiconductor Device and Manufacturing Method
US9224768B2 (en) * 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
US9111766B2 (en) * 2013-09-24 2015-08-18 Infineon Technologies Austria Ag Transistor device with a field electrode
US9306058B2 (en) 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9401399B2 (en) 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US20150118810A1 (en) * 2013-10-24 2015-04-30 Madhur Bobde Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path
CN203659877U (zh) * 2013-10-30 2014-06-18 英飞凌科技奥地利有限公司 超结器件和包括所述超结器件的半导体结构
KR20150051067A (ko) * 2013-11-01 2015-05-11 삼성전기주식회사 전력 반도체 소자 및 그의 제조 방법
US10395970B2 (en) * 2013-12-05 2019-08-27 Vishay-Siliconix Dual trench structure
US9543389B2 (en) * 2013-12-11 2017-01-10 Infineon Technologies Ag Semiconductor device with recombination region
US9543396B2 (en) * 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
JP5989689B2 (ja) * 2014-01-27 2016-09-07 トヨタ自動車株式会社 半導体装置
US9761702B2 (en) 2014-02-04 2017-09-12 MaxPower Semiconductor Power MOSFET having planar channel, vertical current path, and top drain electrode
KR20150108291A (ko) * 2014-03-17 2015-09-25 가부시끼가이샤 도시바 반도체 장치
US9634128B2 (en) 2014-03-17 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor device
JP6226786B2 (ja) * 2014-03-19 2017-11-08 三菱電機株式会社 半導体装置およびその製造方法
US9524960B2 (en) 2014-04-01 2016-12-20 Empire Technoogy Development Llc Vertical transistor with flashover protection
KR102242580B1 (ko) * 2014-04-23 2021-04-22 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US9385187B2 (en) * 2014-04-25 2016-07-05 Texas Instruments Incorporated High breakdown N-type buried layer
DE102014107325B4 (de) * 2014-05-23 2023-08-10 Infineon Technologies Ag Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements
US9245754B2 (en) * 2014-05-28 2016-01-26 Mark E. Granahan Simplified charge balance in a semiconductor device
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP4565029A3 (en) 2014-08-19 2025-07-30 Vishay-Siliconix Mosfet semiconductor device
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
CN104201194B (zh) * 2014-08-26 2016-10-05 电子科技大学 一种具有超低比导通电阻特性的高压功率器件
JP2016058679A (ja) * 2014-09-12 2016-04-21 株式会社東芝 半導体装置およびその製造方法
WO2016080322A1 (ja) 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
US9406750B2 (en) 2014-11-19 2016-08-02 Empire Technology Development Llc Output capacitance reduction in power transistors
US9443973B2 (en) * 2014-11-26 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with charge compensation region underneath gate trench
CN105826195B (zh) * 2015-01-07 2018-12-04 北大方正集团有限公司 一种超结功率器件及其制作方法
DE102015100390B4 (de) * 2015-01-13 2021-02-11 Infineon Technologies Austria Ag Halbleitervorrichtung mit feldplattenstrukturen und gateelektrodenstrukturen zwischen den feldplattenstrukturen sowie herstellungsverfahren
JP2016134546A (ja) * 2015-01-21 2016-07-25 トヨタ自動車株式会社 半導体装置と、その製造方法
JP6126150B2 (ja) * 2015-03-06 2017-05-10 トヨタ自動車株式会社 半導体装置
US10854761B1 (en) * 2015-03-30 2020-12-01 Southern Methodist University Electronic switch and active artificial dielectric
US9299830B1 (en) 2015-05-07 2016-03-29 Texas Instruments Incorporated Multiple shielding trench gate fet
DE102015109545B4 (de) * 2015-06-15 2021-10-21 Infineon Technologies Ag Transistor mit Feldelektroden und verbessertem Lawinendurchbruchsverhalten
US9673314B2 (en) 2015-07-08 2017-06-06 Vishay-Siliconix Semiconductor device with non-uniform trench oxide layer
DE102015111210A1 (de) * 2015-07-10 2017-01-12 Infineon Technologies Dresden Gmbh Verfahren zum füllen eines grabens und halbleiterbauelement
US9786753B2 (en) * 2015-07-13 2017-10-10 Diodes Incorporated Self-aligned dual trench device
WO2017019074A1 (en) * 2015-07-30 2017-02-02 Diodes Incorporated Multi-trench semiconductor devices
US10020362B2 (en) * 2015-09-04 2018-07-10 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
CN105070760B (zh) * 2015-09-06 2017-12-19 电子科技大学 一种功率mos器件
US20170077292A1 (en) * 2015-09-10 2017-03-16 Kabushiki Kaisha Toyota Jidoshokki Trench-gate semiconductor device and manufacturing method thereof
JP2017054958A (ja) * 2015-09-10 2017-03-16 株式会社東芝 半導体装置
JP6551156B2 (ja) * 2015-10-29 2019-07-31 富士電機株式会社 スーパージャンクション型mosfetデバイスおよび半導体チップ
DE102015122804B4 (de) 2015-12-23 2020-10-15 Infineon Technologies Ag Halbleitervorrichtung, enthaltend eine Wärmesenkenstruktur
JP6701789B2 (ja) 2016-02-19 2020-05-27 富士電機株式会社 Rb‐igbt
JP6523997B2 (ja) * 2016-03-14 2019-06-05 株式会社東芝 半導体装置の製造方法
DE102016109555A1 (de) * 2016-05-24 2017-11-30 Infineon Technologies Austria Ag Leistungshalbleiterbauelement und verfahren zur herstellung eines leistungshalbleiterbauelements
DE102016112721B4 (de) 2016-07-12 2022-02-03 Infineon Technologies Ag n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen
JP6583169B2 (ja) * 2016-07-19 2019-10-02 株式会社豊田自動織機 トレンチゲート型半導体装置
CN106098781B (zh) * 2016-08-17 2018-10-26 电子科技大学 一种沟槽结构的vdmos
WO2018034818A1 (en) * 2016-08-18 2018-02-22 Maxpower Semiconductor Inc. Power mosfet having planar channel, vertical current path, and top drain electrode
US9985092B2 (en) * 2016-09-13 2018-05-29 Nexperia B.V. PowerMOS
JP6626021B2 (ja) * 2017-02-15 2019-12-25 トヨタ自動車株式会社 窒化物半導体装置
US10355072B2 (en) * 2017-02-24 2019-07-16 Globalfoundries Singapore Pte. Ltd. Power trench capacitor compatible with deep trench isolation process
EP3545556A4 (en) 2017-03-30 2020-10-14 INTEL Corporation VERTICALLY STACKED TRANSISTORS IN A FIN
JP6869791B2 (ja) * 2017-04-21 2021-05-12 三菱電機株式会社 半導体スイッチング素子及びその製造方法
US10177044B2 (en) * 2017-05-05 2019-01-08 Newport Fab, Llc Bulk CMOS RF switch with reduced parasitic capacitance
CN109216256B (zh) 2017-07-03 2021-01-05 无锡华润上华科技有限公司 沟槽隔离结构及其制造方法
KR102192651B1 (ko) * 2017-08-23 2020-12-17 노을 주식회사 시약을 저장하는 저장 매체 및 이를 이용한 검사 방법 및 검사 모듈
KR102417367B1 (ko) * 2017-12-14 2022-07-05 현대자동차 주식회사 반도체 소자
CN108550621A (zh) * 2018-04-28 2018-09-18 重庆大学 一种具有变k介质槽的超结碳化硅vdmos器件
JP6626929B1 (ja) * 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
JP7210182B2 (ja) * 2018-07-26 2023-01-23 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP2019050434A (ja) * 2019-01-04 2019-03-28 株式会社東芝 半導体装置
WO2020162620A1 (ja) * 2019-02-07 2020-08-13 ローム株式会社 半導体装置
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
CN110416305B (zh) * 2019-06-27 2021-01-08 南京芯舟科技有限公司 元胞结构及其应用的半导体器件
US11171206B2 (en) 2019-07-11 2021-11-09 Micron Technology, Inc. Channel conduction in semiconductor devices
US12032014B2 (en) * 2019-09-09 2024-07-09 Analog Devices International Unlimited Company Semiconductor device configured for gate dielectric monitoring
DE102020123481A1 (de) 2019-09-09 2021-03-11 Analog Devices International Unlimited Company Halbleitervorrichtung, die zur gate-dielektrikum-überwachung ausgebildet ist
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
US11322612B2 (en) * 2019-09-17 2022-05-03 Kabushiki Kaisha Toshiba Semiconductor device with region of varying thickness
TWI739252B (zh) * 2019-12-25 2021-09-11 杰力科技股份有限公司 溝槽式mosfet元件及其製造方法
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法
US11316042B2 (en) * 2020-01-31 2022-04-26 Power Integrations, Inc. Process and structure for a superjunction device
JP7365306B2 (ja) 2020-09-09 2023-10-19 株式会社東芝 半導体装置
US11610982B2 (en) * 2020-09-15 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Void elimination for gap-filling in high-aspect ratio trenches
US12426287B2 (en) 2020-09-16 2025-09-23 Kabushiki Kaisha Toshiba Semiconductor device
CN114388606B (zh) 2020-10-19 2025-06-27 珠海格力电器股份有限公司 碳化硅金属氧化物半导体场效应晶体管及其制造方法
US11569353B2 (en) 2021-02-02 2023-01-31 Micron Technology, Inc. Apparatuses including passing word lines comprising a band offset material, and related methods and systems
US11705490B2 (en) * 2021-02-08 2023-07-18 Applied Materials, Inc. Graded doping in power devices
JP7447038B2 (ja) * 2021-03-09 2024-03-11 株式会社東芝 半導体装置
JP2023015636A (ja) * 2021-07-20 2023-02-01 ルネサスエレクトロニクス株式会社 半導体装置
US20230223395A1 (en) * 2022-01-13 2023-07-13 Texas Instruments Incorporated Electrostatic discharge protection devices with high current capability
CN115148821B (zh) * 2022-07-15 2025-09-12 中国电子科技集团公司第五十五研究所 抗单粒子辐照的SiC MOSFET器件及其制造方法
CN115312586B (zh) * 2022-09-01 2023-10-17 江苏长晶科技股份有限公司 一种碳化硅功率器件
CN115241277B (zh) * 2022-09-22 2023-01-10 深圳芯能半导体技术有限公司 一种隔离型沟槽mos器件及其制备方法
CN115775823B (zh) * 2022-11-29 2023-07-21 上海功成半导体科技有限公司 屏蔽栅功率器件及其制备方法
CN116313809B (zh) * 2023-03-14 2024-02-23 深圳市至信微电子有限公司 沟槽型mos场效应晶体管的制备方法和应用
US20240347375A1 (en) * 2023-04-17 2024-10-17 Nanya Technology Corporation Semiconductor device including isolation structure with impurity and method for manufacturing the same
CN120076385B (zh) * 2023-11-24 2025-12-19 华润微电子(重庆)有限公司 半导体器件及其制造方法
CN117374125A (zh) * 2023-12-06 2024-01-09 无锡锡产微芯半导体有限公司 一种沟槽mosfet器件及其制备工艺
CN119486212B (zh) * 2025-01-13 2025-05-16 安徽长飞先进半导体股份有限公司 半导体器件及制备方法、功率模块、功率转换电路、车辆

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US203576A (en) * 1878-05-14 Improvement in book-clamps
US41407A (en) * 1864-01-26 Improvement in plows
US60916A (en) * 1867-01-01 Theophiltjs f
US6021A (en) * 1849-01-09 Cast-iron cab-wheel
GB2028582A (en) 1978-08-17 1980-03-05 Plessey Co Ltd Field effect structure
US4978631A (en) * 1986-07-25 1990-12-18 Siliconix Incorporated Current source with a process selectable temperature coefficient
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
JPH0834242B2 (ja) 1988-12-08 1996-03-29 日本電気株式会社 半導体装置およびその製造方法
US5282018A (en) 1991-01-09 1994-01-25 Kabushiki Kaisha Toshiba Power semiconductor device having gate structure in trench
CN1019720B (zh) * 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
DE4333661C1 (de) * 1993-10-01 1995-02-16 Daimler Benz Ag Halbleiterbauelement mit hoher Durchbruchsspannung
JP3307785B2 (ja) 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
EP1039548B1 (de) * 1996-02-05 2004-03-31 Infineon Technologies AG Durch Feldeffekt steuerbares Halbleiterbauelement
JPH09283754A (ja) * 1996-04-16 1997-10-31 Toshiba Corp 高耐圧半導体装置
JPH10256550A (ja) 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Mos型半導体素子
EP0968529B1 (en) * 1997-12-10 2008-01-23 Nxp B.V. Semiconductor device and method of manufacturing such a device
US6069372A (en) 1998-01-22 2000-05-30 Mitsubishi Denki Kabushiki Kaisha Insulated gate type semiconductor device with potential detection gate for overvoltage protection
KR100295063B1 (ko) 1998-06-30 2001-08-07 김덕중 트렌치게이트구조의전력반도체장치및그제조방법
GB9815021D0 (en) 1998-07-11 1998-09-09 Koninkl Philips Electronics Nv Semiconductor power device manufacture
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
JP4765012B2 (ja) * 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
GB0003186D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device
JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
GB0006957D0 (en) * 2000-03-23 2000-05-10 Koninkl Philips Electronics Nv A semiconductor device
US6541820B1 (en) * 2000-03-28 2003-04-01 International Rectifier Corporation Low voltage planar power MOSFET with serpentine gate pattern
WO2001088997A2 (en) 2000-05-13 2001-11-22 Koninklijke Philips Electronics N.V. Trench-gate semiconductor device and method of making the same
US6391699B1 (en) * 2000-06-05 2002-05-21 Fairchild Semiconductor Corporation Method of manufacturing a trench MOSFET using selective growth epitaxy
US6445035B1 (en) * 2000-07-24 2002-09-03 Fairchild Semiconductor Corporation Power MOS device with buried gate and groove
US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
JP4764987B2 (ja) * 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
US6509233B2 (en) * 2000-10-13 2003-01-21 Siliconix Incorporated Method of making trench-gated MOSFET having cesium gate oxide layer
US6653691B2 (en) * 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4198469B2 (ja) 2001-04-11 2008-12-17 シリコン・セミコンダクター・コーポレイション パワーデバイスとその製造方法
US20020179968A1 (en) * 2001-05-30 2002-12-05 Frank Pfirsch Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
DE10144268B4 (de) 2001-09-08 2015-03-05 Robert Bosch Gmbh Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes
CN1181559C (zh) * 2001-11-21 2004-12-22 同济大学 一种半导体器件
US6949798B2 (en) * 2002-01-28 2005-09-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US7384854B2 (en) 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
US6812525B2 (en) * 2002-06-25 2004-11-02 International Rectifier Corporation Trench fill process
JP2004047599A (ja) 2002-07-10 2004-02-12 Renesas Technology Corp 半導体装置およびその製造方法
JP4265201B2 (ja) 2002-10-25 2009-05-20 富士電機デバイステクノロジー株式会社 超接合半導体素子
DE10313712B4 (de) * 2003-03-27 2008-04-03 Infineon Technologies Ag Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4194890B2 (ja) * 2003-06-24 2008-12-10 株式会社豊田中央研究所 半導体装置とその製造方法
DE10334780B3 (de) * 2003-07-30 2005-04-21 Infineon Technologies Ag Halbleiteranordnung mit einer MOSFET-Struktur und einer Zenereinrichtung sowie Verfahren zur Herstellung derselben
JP4096838B2 (ja) * 2003-08-20 2008-06-04 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
DE10339488B3 (de) * 2003-08-27 2005-04-14 Infineon Technologies Ag Laterales Halbleiterbauelement mit einer wenigstens eine Feldelektrode aufweisenden Driftzone
EP1536463A1 (en) * 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Method for manufacturing a power device with insulated trench-gate having controlled channel length and corresponding device
JP4928947B2 (ja) * 2003-12-19 2012-05-09 サード ディメンジョン (スリーディ) セミコンダクタ インコーポレイテッド 超接合デバイスの製造方法
US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7535056B2 (en) 2004-03-11 2009-05-19 Yokogawa Electric Corporation Semiconductor device having a low concentration layer formed outside a drift layer
US20050199918A1 (en) * 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
US7465986B2 (en) 2004-08-27 2008-12-16 International Rectifier Corporation Power semiconductor device including insulated source electrodes inside trenches
US7355238B2 (en) 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
DE112006000832B4 (de) * 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
DE102006055131A1 (de) * 2005-11-28 2007-06-06 Fuji Electric Holdings Co., Ltd., Kawasaki Halbleiterbauteil und Verfahren zu seiner Herstellung
US7473976B2 (en) * 2006-02-16 2009-01-06 Fairchild Semiconductor Corporation Lateral power transistor with self-biasing electrodes
US7535621B2 (en) * 2006-12-27 2009-05-19 Qualcomm Mems Technologies, Inc. Aluminum fluoride films for microelectromechanical system applications
US8344451B2 (en) * 2007-01-09 2013-01-01 Maxpower Semiconductor, Inc. Semiconductor device

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