KR102932705B1 - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR102932705B1
KR102932705B1 KR1020237038815A KR20237038815A KR102932705B1 KR 102932705 B1 KR102932705 B1 KR 102932705B1 KR 1020237038815 A KR1020237038815 A KR 1020237038815A KR 20237038815 A KR20237038815 A KR 20237038815A KR 102932705 B1 KR102932705 B1 KR 102932705B1
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KR
South Korea
Prior art keywords
transistor
oxide semiconductor
layer
electrode layer
insulating layer
Prior art date
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KR1020237038815A
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English (en)
Korean (ko)
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KR20230157542A (ko
Inventor
순페이 야마자키
다이스케 마츠바야시
케이스케 무라야마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020267005750A priority Critical patent/KR20260036398A/ko
Publication of KR20230157542A publication Critical patent/KR20230157542A/ko
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Publication of KR102932705B1 publication Critical patent/KR102932705B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)
KR1020237038815A 2012-04-13 2013-04-05 반도체 장치 Active KR102932705B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020267005750A KR20260036398A (ko) 2012-04-13 2013-04-05 반도체 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2012-091539 2012-04-13
JP2012091539 2012-04-13
KR1020227044339A KR20230004930A (ko) 2012-04-13 2013-04-05 반도체 장치
PCT/JP2013/061131 WO2013154195A1 (en) 2012-04-13 2013-04-05 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227044339A Division KR20230004930A (ko) 2012-04-13 2013-04-05 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020267005750A Division KR20260036398A (ko) 2012-04-13 2013-04-05 반도체 장치

Publications (2)

Publication Number Publication Date
KR20230157542A KR20230157542A (ko) 2023-11-16
KR102932705B1 true KR102932705B1 (ko) 2026-02-27

Family

ID=49324274

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020237038815A Active KR102932705B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020147030819A Ceased KR20150005949A (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020207012859A Active KR102254731B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020267005750A Pending KR20260036398A (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020217037808A Active KR102479944B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020217014742A Active KR102330543B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020227044339A Abandoned KR20230004930A (ko) 2012-04-13 2013-04-05 반도체 장치

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020147030819A Ceased KR20150005949A (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020207012859A Active KR102254731B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020267005750A Pending KR20260036398A (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020217037808A Active KR102479944B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020217014742A Active KR102330543B1 (ko) 2012-04-13 2013-04-05 반도체 장치
KR1020227044339A Abandoned KR20230004930A (ko) 2012-04-13 2013-04-05 반도체 장치

Country Status (6)

Country Link
US (9) US8946702B2 (https=)
JP (9) JP5973374B2 (https=)
KR (7) KR102932705B1 (https=)
SG (1) SG10201610711UA (https=)
TW (3) TWI573271B (https=)
WO (1) WO2013154195A1 (https=)

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DE112013002407B4 (de) 2012-05-10 2024-05-08 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
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US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
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JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
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JP6488124B2 (ja) * 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
KR102325158B1 (ko) * 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
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JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
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