KR101121303B1 - 상부 계면이 두 블록에 동등한 선호도로 습윤성을 나타내도록 구속되는 블록 공중합체 필름의 열 어닐링 - Google Patents
상부 계면이 두 블록에 동등한 선호도로 습윤성을 나타내도록 구속되는 블록 공중합체 필름의 열 어닐링 Download PDFInfo
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- KR101121303B1 KR101121303B1 KR1020107023487A KR20107023487A KR101121303B1 KR 101121303 B1 KR101121303 B1 KR 101121303B1 KR 1020107023487 A KR1020107023487 A KR 1020107023487A KR 20107023487 A KR20107023487 A KR 20107023487A KR 101121303 B1 KR101121303 B1 KR 101121303B1
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- block copolymer
- block
- copolymer material
- substrate
- trench
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Classifications
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Abstract
Description
도 1은, 그 위에 중립적 습윤성 물질을 갖는 기판을 나타내는, 본 발명의 일 실시예에 따른 예비적 처리 스테이지에서의 기판의 일부의 개략적 상면도이다. 도 1A -도 1B는 각각 라인 1A-1A 및 라인 1B-1B를 따라 취한 도 1에 도시된 기판의 단면의 입면도(elevational, cross-sectional view)를 예시한다.
도 2는 중립적 습윤성 물질 상에 생성된 물질 층에 트렌치들의 생성을 나타내는 후속 스테이지에서의 도 1의 기판의 개략적 상면도를 예시한다. 도 2A - 도 2B는 각각 라인 2A-2A 및 라인 2B-2B를 따라 취한 도 2에 도시된 기판의 일부의 단면의 입면도를 예시한다.
도 3은 기판 상에 생성된 물질 층에 트렌치를 갖는 기판을 나타내는, 본 발명의 다른 실시예에 따른 예비적 처리 스테이지에서의 기판의 일부의 측면의 입면도를 예시한다. 도 4는 트렌치 내에 중립적 습윤성 물질의 생성을 나타내는 후속 스테이지에서의 도 3의 기판의 측면의 입면도를 예시한다.
도 5는 트렌치 내의 블록 공중합체 물질을 나타내는 후속 스테이지에서의 도 2의 기판의 개략적 상면도이다. 도 5A - 도 5B는 각각 라인 5A-5A 및 라인 5B-5B를 따라 취한 도 5에 도시된 기판의 일부의 단면의 입면도를 예시한다.
도 6 - 도 8은 대역화된 어닐링 기술에 의해 본 발명의 실시예에 따른 필름의 일부를 어닐링하는 것을 나타내는 후속 스테이지들에서의 도 5의 기판의 개략적 상면도이다. 도 6A - 도 8A는 각각 필름을 대역 어닐링하기 위한 가열 장치의 일 실시예를 나타내는, 라인 6A-6A, 7A-7A 및 8A-8A를 따라 취한 도 6 - 도 8에 도시된 기판의 단면의 입면도를 예시한다. 도 6B는 라인 6B-6B를 따라 취한 도 6에 도시된 기판의 단면의 입면도이다.
도 9는 어닐링 동안 블록 공중합체 물질 위에 비우선적 습윤성 물질의 배치를 도시하는, 본 발명의 방법의 다른 실시예에 따른 후속 스테이지에서의 도 5의 기판의 상면도이다. 도 9A - 도 9B는 각각 라인 9A-9A 및 라인 9B-9B를 따라 취한 도 9에 도시된 기판의 단면의 입면도이다. 도 10A - 도 10B는 각각 어닐링된 자기조립된 블록 공중합체 물질, 및 어닐링 후 비우선적 습윤성 물질의 제거를 나타내는 후속 스테이지에서의 도 9A - 9B에 도시된 기판의 단면도이다.
도 11 - 도 13은 중합체 블록들 중 하나를 제거한 후 자기조립된 블록 공중합체 필름을 기판을 에칭하기위한 마스크로 사용하고, 에칭된 개구를 채우는 실시예를 도시하는 후속 스테이지들에서의 도 8의 기판의 상면도이다. 도 11A - 도 13A는 각각 라인 11A-11A 내지 선 13A-13A를 따라 취한 도 11 - 도 13에 도시된 기판의 일부의 단면의 입면도를 예시한다. 도 11B - 도 13B는 각각 라인 11B-11B 내지 라인 13B-13B를 따라 취한 도 11 - 도 13에 도시된 기판의 단면도이다.
Claims (32)
- 기판 상에 나노구조화된 중합체 물질(nanostructured polymer material)을 생성하는 방법으로서,
상기 기판 상의 물질 층의 트렌치 내에 실린더상 블록 공중합체 물질(cylindrical-phase block copolymer material)을 생성하는 단계 - 상기 트렌치는 중립적 습윤성 바닥, 상기 블록 공중합체의 부 블록(minority block)에 대해 우선적 습윤성을 나타내는 대향 측벽들 및 단부들을 가짐 - ; 및
임의의 블록에 대해서 비우선적인 용매 증기 중에서, 상기 블록 공중합체 물질의 유리 전이 온도(Tg)보다 높은 온도에서, 상기 블록 공중합체 물질을 어닐링하는 단계
를 포함하고,
상기 블록 공중합체 물질은 블록 공중합체의 제2 블록의 기질(matrix) 내의 상기 블록 공중합체의 제1 블록의 실린더형 도메인들로 자기조립하고, 상기 자기조립된 블록 공중합체 물질은 두께를 갖고, 상기 실린더형 중합체 도메인들은 트렌치 바닥에 대해 수직 배향되고 상기 트렌치의 길이에 대해 단일의 배열로 상기 자기조립된 블록 공중합체 물질의 상기 두께를 관통하여 연장되는, 방법. - 제1항에 있어서, 상기 블록 공중합체 물질을 어닐링하는 단계는 부분 포화 농도의 유기 용매 중에서 수행되는 방법.
- 제1항에 있어서, 상기 블록 공중합체 물질을 어닐링하는 단계는 상기 블록 공중합체 물질을 용매의 비점(boiling point)까지 가열하는 것을 포함하고, 상기 용매에 의한 블록 공중합체 물질의 팽윤(swelling)이 일어나지 않는 방법.
- 제1항에 있어서, 상기 블록 공중합체 물질이 전체적으로 가열되는 방법.
- 제1항에 있어서, 상기 블록 공중합체 물질이 대역 어닐링(zone annealed)되는 방법.
- 제1항에 있어서, 상기 어닐링하는 단계는 상기 블록 공중합체 물질의 일부를 가열함으로써 상기 블록 공중합체 물질의 상기 가열된 부분에만 자기조립된 실린더형 도메인들이 생성되도록 하는 것을 포함하는 방법.
- 제6항에 있어서, 상기 블록 공중합체 물질의 제2 부분에 열을 적용함으로써 상기 블록 공중합체 물질의 상기 제2 부분에 상기 자기조립된 실린더형 도메인들이 생성되도록 하는 것을 더 포함하는 방법.
- 제1항에 있어서, 상기 어닐링하는 단계는 상기 블록 공중합체 물질의 제1 부분을 선택적으로 가열하는 것을 포함하는 방법.
- 제1항에 있어서, 상기 어닐링하는 단계는 상기 기판 위에서 열원(thermal source)을 이동시키는 것을 포함하는 방법.
- 제1항에 있어서, 상기 어닐링하는 단계는,
상기 블록 공중합체 물질의 제1 부분을 가열하고,
상기 블록 공중합체 물질의 제2 부분을 가열하는 것
을 포함하고,
상기 블록 공중합체 물질은 상기 유리 전이 온도보다 높은 온도로 가열되어 중합체 블록의 상 분리(phase separation)가 일어나는 방법. - 제1항에 있어서, 상기 어닐링하는 단계는 상기 블록 공중합체 물질의 제1 부분을 가열한 후 냉각하는 것을 포함하는 방법.
- 제1항에 있어서, 상기 어닐링하는 단계는 상기 블록 공중합체 물질을 냉온에서부터 고온까지의 온도 구배(cold-to-hot temperature gradient)에 노출시키는 것을 포함하는 방법.
- 제1항에 있어서, 상기 블록 공중합체 물질을 어닐링하는 단계는,
상기 블록 공중합체 물질을 규칙-불규칙 온도(order-disorder temperature)보다 높고 상기 유리 전이 온도보다 높은 온도로 가열하고,
상기 블록 공중합체 물질을 상기 규칙-불규칙 온도보다 낮지만 상기 유리 전이 온도보다 높은 온도로 냉각하는 것을 포함하는 방법. - 기판 상에 나노구조화된 중합체 물질을 생성하는 방법으로서,
실린더상 블록 공중합체 물질을 상기 블록 공중합체 물질의 유리 전이 온도(Tg)보다 높은 온도에서 가열하는 동안에 임의의 블록에 대해서 비우선적인 용매 증기에 노출하는 단계 - 상기 블록 공중합체 물질은 상기 기판 상의 물질층의 트렌치 내에 위치하고, 상기 트렌치는 폭, 길이, 중립적 습윤성 바닥, 상기 블록 공중합체의 부 블록에 대해 우선적 습윤성을 나타내는 대향 측벽들 및 단부들을 가짐 - 를 포함하고,
상기 블록 공중합체 물질은 미세상(microphase) 분리되어 상기 트렌치 내에 제2 중합체 블록의 기질의 제1 중합체 블록으로 이루어진 실린더형 도메인들을 생성하고, 상기 실린더형 중합체 도메인들은 트렌치 바닥에 대해 수직 배향되고 상기 트렌치의 길이를 연장하는 단일의 배열로 측벽들에 정합되는, 방법. - 제14항에 있어서, 상기 중립적 습윤성 바닥은 랜덤 공중합체 물질을 포함하는 방법.
- 제14항에 있어서, 상기 중립적 습윤성 바닥은 그래프팅된 단일중합체들(grafted homopolymer)의 블렌드를 포함하는 방법.
- 제14항에 있어서, 상기 중립적 습윤성 바닥이 수소로 말단 처리된 실리콘(hydrogen-terminated silicon)을 포함하는 방법.
- 제14항에 있어서, 상기 트렌치의 상기 측벽들 및 상기 단부들은 산화물, 실리콘 질화물, 실리콘 산탄화물, 실리콘 산질화물, 인듐 주석 산화물(ITO), 메타크릴레이트 레지스트, 및 폴리디메틸 글루타르이미드 레지스트로 이루어지는 군으로부터 선택되는 물질을 포함하는 방법.
- 제14항에 있어서, 상기 트렌치 내의 상기 블록 공중합체 물질은 상기 블록 공중합체의 L 값 이상의 두께를 갖는 방법.
- 제14항에 있어서, 상기 제2 중합체 블록의 기질을 선택적으로 가교(crosslinking)하는 것을 더 포함하는 방법.
- 제14항에 있어서, 상기 제1 중합체 블록을 선택적으로 제거하여 상기 제2 중합체 블록의 기질을 관통하여 연장되는 실린더형 개구들을 생성하는 것을 더 포함하는 방법.
- 제21항에 있어서, 상기 개구들을 통해서 상기 기판의 마스킹되지 않은 부분들을 에칭하는 것을 더 포함하는 방법.
- 기판 상에 나노구조화된 중합체 물질을 생성하는 방법으로서,
상기 기판 상의 물질 층의 트렌치 내의 실린더상 블록 공중합체 물질 위에 그와 접촉하는 임의의 블록에 대해 비우선적인 물질을 도포하는 단계 - 상기 트렌치는 중립적 습윤성 바닥, 상기 블록 공중합체의 부 블록에 대해 우선적 습윤성을 나타내는 대향 측벽들 및 단부들을 가짐 - ; 및
상기 비우선적 물질과 접촉하는 동안에 상기 블록 공중합체 물질의 유리 전이 온도(Tg)보다 높은 온도에서 상기 블록 공중합체 물질을 어닐링하는 단계
를 포함하고,
상기 블록 공중합체 물질은 상기 블록 공중합체의 제2 블록의 기질 내의 상기 블록 공중합체의 제1 블록의 실린더형 도메인들로 자기조립하고, 상기 자기조립된 블록 공중합체 물질은 두께를 갖고, 상기 실린더형 중합체 도메인들은 상기 트렌치 바닥에 대해 수직 배향되고 상기 트렌치의 길이에 대해 단일의 배열로 상기 자기조립된 블록 공중합체 물질의 상기 두께를 관통하여 연장되는, 방법. - 제23항에 있어서, 상기 비우선적 물질을 도포하는 단계는 상기 블록 공중합체 물질을 비우선적 표면을 갖는 고체 엘라스토머성 물질(solid elastomeric material)과 접촉시키는 것을 포함하는 방법.
- 기판을 에칭하는 방법으로서,
상기 기판 위에 놓인 물질 층의 트렌치 내의 블록 공중합체 물질을, 상기 블록 공중합체 물질의 유리 전이 온도(Tg)보다 높은 온도에서 가열하는 동안 임의의 블록에 대해 비우선적인 용매 증기 중에서 어닐링하는 단계 - 상기 트렌치는 폭, 길이, 중립적 습윤성 바닥, 및 상기 블록 공중합체의 부 블록에 대해 우선적 습윤성을 나타내는 대향 측벽들 및 단부들을 갖고, 상기 블록 공중합체 물질은 주(majority) 중합체 블록의 기질 내의 부 중합체 블록의 수직 배향 실린더들의 단일의 배열을 생성하고, 상기 어닐링된 블록 공중합체 물질은 두께를 갖고, 상기 실린더들은 상기 어닐링된 블록 공중합체의 상기 두께를 관통하여 트렌치 바닥까지 연장됨 - ;
상기 부 중합체 블록을 선택적으로 제거하여 상기 주 중합체 블록의 기질 내에 개구들을 생성하여 기판을 노출시키는 단계; 및
상기 개구들을 통해 상기 기판을 에칭하는 단계
를 포함하는 방법. - 제25항에 있어서, 상기 부 중합체 블록을 제거하기 전에 상기 주 중합체 블록을 선택적으로 가교하는 것을 더 포함하는 방법.
- 제25항에 있어서, 상기 기판의 상기 개구들에 충전 물질을 충전하는 것을 더 포함하는 방법.
- 제27항에 있어서, 상기 충전 물질은 금속, 금속 합금 및 금속/절연체/금속 스택을 포함하는 방법.
- 기판을 에칭하는 방법으로서,
상기 기판 위에 놓인 물질 층의 트렌치 내의 블록 공중합체 물질을, 상기 블록 공중합체 물질 위에서 그와 접촉하는 임의의 블록에 대해서 비우선적인 물질과 함께 상기 블록 공중합체 물질의 유리 전이 온도(Tg)보다 높은 온도에서 가열함으로써 어닐링하는 단계 - 상기 트렌치는 폭, 길이, 중립적 습윤성 바닥, 및 상기 블록 공중합체의 부 블록에 대해 우선적 습윤성을 나타내는 대향 측벽들 및 단부들을 갖고, 상기 블록 공중합체 물질은 주 중합체 블록의 기질 내의 부 중합체 블록의 수직 배향 실린더들의 단일의 배열을 생성하고, 상기 어닐링된 블록 공중합체 물질은 두께를 갖고, 상기 실린더들은 상기 어닐링된 블록 공중합체의 상기 두께를 관통하여 상기 트렌치 바닥까지 연장됨 - ;
상기 부 중합체 블록을 선택적으로 제거하여 상기 주 중합체 블록의 기질 내에 개구들을 생성하여 기판을 노출시키는 단계; 및
상기 개구들을 통해 상기 기판을 에칭하는 단계
를 포함하는 방법. - 제29항에 있어서, 상기 비우선적 물질은 폴리(디메틸실록산) 및 폴리(우레탄)으로 이루어지는 군으로부터 선택되는 고체 엘라스토머성 물질을 포함하는 방법.
- 제29항에 있어서, 상기 비우선적 물질을 제거하여 상기 트렌치 내의 상기 어닐링된 블록 공중합체 물질을 노출시키는 것을 더 포함하는 방법.
- 제31항에 있어서, 용매를 상기 비우선적 물질에 적용하여 제거를 향상시키는 것을 더 포함하는 방법.
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PCT/US2009/035861 WO2009117243A1 (en) | 2008-03-21 | 2009-03-03 | Thermal anneal of a block copolymer films with top interface constrained to wet both blocks with equal preference |
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