US6746825B2 - Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates - Google Patents
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24058—Structurally defined web or sheet [e.g., overall dimension, etc.] including grain, strips, or filamentary elements in respective layers or components in angular relation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
- Y10T428/2995—Silane, siloxane or silicone coating
Definitions
- This invention pertains generally to the field of nanofabrication techniques and particularly to nanofabrication carried out utilizing diblock copolymers.
- Block copolymers are interesting materials for use in nanofabrication because they microphase separate to form ordered, chemically distinct domains with dimensions of 10's of nm.
- the size and shape of these domains can be controlled by manipulating the molecular weight and composition of the copolymer. Additionally, the interfaces between these domains have widths on the order of 1-5 nm and can be controlled by changing the chemical composition of the blocks of the copolymers.
- One approach to inducing macroscopic orientation of the domains of block copolymers combines advanced lithographic techniques and the self-assembly of the block copolymer film.
- Organic imaging layers are patterned using lithographic tools, e.g., proximity x-ray lithography with a mask and extreme ultraviolet (EUV) interferometric lithography. Regions of the imaging layer that are exposed to radiation or electrons undergo a chemical transformation that alters the surface chemistry of the imaging layer.
- a thin film of a symmetric diblock copolymer is then deposited on the patterned imaging layer and annealed above the glass transition temperature of the blocks of the copolymer.
- the lamellar domains of the copolymer film self-assemble such that adjacent regions of the chemically patterned surface are wet by the different blocks of the copolymer.
- the lamellae orient perpendicular to the plane of the film and amplify the surface pattern.
- selective removal of one of the blocks results in a nanopatterned template that can be used for additive or subtractive processes for nanofabrication.
- This strategy has the advantages of achieving macroscopic orientation of the lamellar domains using parallel exposure tools and registration of the patterned film with the substrate. See, Richard D.
- advanced interferometric lithography is combined with self-assembled block copolymer systems to provide nanofabricated structures.
- Interferometry is used to pattern substrates with regions of different chemical functionality in spatial arrangements commensurate with the characteristic dimensions of the domain structure of the polymer.
- the morphology of a block copolymer layer on the surface of the substrate is guided toward the desired long-range orientation, amplifying the pattern on the surface.
- the block copolymers can be synthesized for guided self-assembly and either are functional as formed or can be functionalized after microstructures are formed.
- a substrate is provided with an imaging layer thereon that will respond to exposure to selected wavelengths to change the wettability of the exposed material of the imaging layer to the components of a selected block copolymer.
- the imaging layer is then exposed to two or more beams of radiation within the selected wavelengths to form interference patterns at the imaging layer to change the wettability of the imaging layer in accordance with the interference patterns.
- the interference pattern in the imaging layer has a period substantially equal to, and preferably within 20% of, the bulk lamellar period L 0 of the selected copolymer.
- the exposing radiation preferably is at selected wavelengths in the extreme ultraviolet or shorter.
- a layer of the selected copolymer is then deposited onto the exposed imaging layer, and the copolymer layer is annealed to separate the components of the copolymer in accordance with the pattern of wettability in the underlying imaging layer to replicate the pattern of the imaging layer in the copolymer layer.
- one of the beams may be provided directly from the source onto the imaging layer and the other beam may be provided by reflecting a portion of the beam from the same source with a Lloyd's mirror onto the imaging layer at an angle to the beam that is directly incident on the imaging layer.
- the resulting pattern in the imaging layer defined by the interference pattern is a periodic pattern of alternating stripes which differ in wettability with respect to one of the components of the copolymer.
- the resulting microstructure in the annealed copolymer layer can comprise corresponding alternating stripes of the two components of the copolymer that are separated in accordance with the regions of greater or lesser wettability.
- Other interferometric processes and instruments may also be utilized.
- a third beam may be provided to the imaging layer by reflecting a portion of the beam from the same source with another Lloyd's mirror onto the imaging layer at an angle to the beam that is directly incident on the imaging layer.
- the two Lloyd's mirrors are positioned at an angle to each other to provide interference patterns at the imaging layer that are at an angle to each other.
- an array of separated regions can be defined in the imaging layer in which the separated regions have a higher or lower wettability with respect to one of the components of the copolymer.
- Deposit of the copolymer layer and annealing of the copolymer layer results in regions of one of the components of the copolymer separated primarily by components of the other copolymer in a pattern which corresponds to the underlying pattern in the imaging layer.
- the imaging layer may be formed of materials such as self-assembled monolayers such as alkylsiloxanes.
- Various block copolymers may be utilized, one example of which is a copolymer of polystyrene and poly(methyl methacrylate).
- FIG. 1 is a phase diagram of equilibrium film morphologies for symmetric diblock copolymer films confined between patterned and neutral surfaces.
- FIG. 2 is a diagram of interfacial energy between self-assembled monolayers of OTS exposed at different doses and a copolymer of polystyrene and poly(methyl methacrylate).
- FIG. 3 is an illustrative diagram of calculated extreme ultraviolet intensity at a sample surface utilizing multiple interfering beams.
- FIG. 4 is a simplified diagram illustrating the steps in forming of copolymer structures in accordance with the invention.
- FIG. 5 is a simplified view of an exposure pattern formed on a substrate by three interfering beams.
- FIG. 6 is a simplified diagram illustrating the stripe pattern of illumination at the surface of a substrate from two interfering beams.
- FIG. 9 are contour plots of the two-dimensional order parameter profiles for the morphology between a lower hexagonally patterned substrate and an upper sH surface.
- FIG. 10 is a schematic diagram of an interferometric lithography system that may be utilized to expose samples in a pattern in accordance with the invention.
- thin films of block copolymer are self-assembled to produce structures that may be used, e.g., as templates for nanofabrication under appropriately controlled conditions.
- Processing conditions are preferably utilized that induce perpendicular orientation of the microphase separated domains and amplification of the surface patterns that are lithographically formed on a substrate. The following discusses the factors that influence the preferred processing conditions.
- the free energy of symmetric diblock copolymer films confined between homogeneous and patterned surfaces is assumed to consist of four contributions: (1) the elastic free energy associated with chain stretching, (2) the block—block interfacial energy, (3) the surface-block interfacial energy, and (4) the free energy of bending if the lamellae were not flat.
- the equilibrium film morphology was determined from proposed structures with the minimum total free energy, and is found to be primarily a result of the competition between unfavorable surface-block interactions and chain stretching. Monte Carlo simulations were used that generated all possible structures, and the results allowed the construction of a phase diagram, as shown in FIG.
- Schematics (a) through (e) are representations of the film morphology in each region of the phase diagram, where light regions represent one block and dark regions represent the other block.
- the surface pattern is designated by alternating sA and sB regions.
- Schematic (d) represents the desired film morphology with perpendicular orientation of lamellae that amplify the surface pattern.
- the optimal conditions that resulted in perpendicular lamellae that amplified the surface were found to be (1) the period of the substrate pattern equaled the bulk period of the lamellar domains (L 0 ), (2) the upper surface of the film was near neutral wetting conditions (had equal affinity for both blocks of the copolymer), and (3) the film thickness was equal to or less than Lo. Slight deviations from these optimal conditions, e.g., the upper surface had a slight affinity for one of the blocks or the film thickness was greater than Lo, still resulted in the desired behavior.
- Imaging layers were developed to meet the following criteria: (1) the surface chemistry must be tunable by interferometric techniques such that exposed and unexposed regions have different affinities (wetting) for the blocks of the copolymer, and (2) the layers must be thermally stable during a high temperature annealing of the polymer films.
- SAMs Self assembled monolayers
- SiO x the surface chemistry of SAMs of alkylsiloxanes on SiO x can be modified by suitable exposure (e.g., to x-rays in the presence of air)
- SAMs are ultrathin layers (2.6 nm) (eliminating opacity issues for extreme ultraviolet (EUV) lithography)
- SAMs of alkylsiloxanes are thermally stable under vacuum up to temperatures of 740 K.
- the selectivity of the reaction for production of hydroperoxy radicals versus recombination/crosslinking reactions depends upon the pressure of oxygen in the exposure atmosphere, and this competition between reactions results in asymptotic conversion of the CH 3 groups to polar, oxygen containing groups, with the asymptotic limit also being a function of the pressure of oxygen.
- the wetting behavior of block copolymer thin films has been shown to depend upon the interfacial energy between each block of the copolymer and the substrate, with the block having the lower interfacial energy preferentially wetting the substrate.
- the interfacial energies ( ⁇ ) between polystyrene (PS) and poly(methyl methacrylate) (PMMA) and SAMs of OTS exposed to x-rays in air was calculated as a function of dose as shown in FIG. 2, and the wetting behavior of thin films of poly(styrene-b-methyl methacrylate) (P(S-b-MMA)) was described qualitatively at each dose.
- Unexposed SAMs of OTS were dewet by films of P(S-b-MMA) because the spreading coefficient was less than 0.
- the polymer films wet SAMs of OTS with the PS block present at the substrate interface for exposure doses between 300 and 1000 mJ/cm 2 because ⁇ PS/OTS was lower than ⁇ PMMA/OTS .
- the surfaces were neutral such that the lamellae oriented perpendicular to the substrate.
- ⁇ PMMA/OTS ⁇ PS/OTS For doses greater than 1400 mJ/cm 2 , ⁇ PMMA/OTS ⁇ PS/OTS , and the PMMA block preferentially wet the substrate.
- SAMs of alkylsiloxanes were concluded to be suitable imaging layers: (1) SAMs of OTS exposed to low doses of x-rays in air (between 300 and 500 mJ/cm 2 ) are wet by the PS block of P(S-b-MMA) films, (2) SAMs of OTS exposed to high doses of x-rays in air (greater than 1400 mJ/cm 2 ) are converted to polar surfaces that are preferentially wet by the PMMA block of P(S-b-MMA) films. Therefore, SAMs of OTS meet the criterion that exposed and unexposed (or lightly exposed) regions are wet by the different blocks of the copolymer.
- the requirements for the exposure system under preferred conditions are: (1) capability to pattern at the scale of L 0 (10-100 nm), and (2) ability to pattern over large areas in a parallel process.
- EUV, proximity x-rays, and electron beam lithography are capable of patterning at the scale of L 0 , but only EUV and proximity x-ray lithography are parallel techniques.
- Proximity x-ray lithography is limited by the difficulty of fabricating masks with dense features with periods at the scale of L 0 .
- the imaging layer undergoes chemical transformation as a result of the photoelectrons emitted from the substrate during irradiation. This minimum in the photoelectron energy reduces the lateral spreading of the photoelectrons and results in higher fidelity in pattern transfer to the imaging layer.
- Information regarding the chemical modification of SAMs of OTS with EUV radiation is not known to the same detail as for x-rays, but exposure of SAMs of OTS to high doses of EUV radiation in air results in similar changes in surface properties such that these surfaces are wet by the PMMA block of P(S-b-MMA) films.
- the present invention carries out lithography to pattern at the scale of L 0 utilizing interferometric techniques.
- An exemplary lithography system in accordance with the present invention is an EUV lithographic system utilizing a Lloyd's mirror interferometer to produce high density fringes. Part of the incident beam is reflected from the Lloyd's mirror at a grazing angle and interferes with the direct beam at the plane of the substrate. Such a system is capable of producing grating patterns with very small periods, on the order of 10's of nm.
- Suitable EUV radiation can be obtained from various sources, including synchrotrons. For a general comparison of presently available EUV sources, see V. Y.
- Wieland Schollkopf, et al. “A Cluster Size Nanofilter with Variable Openings Between 2 and 50 nm,” J. of Chemical Physics, Vol. 109, No. 21, 1 December 1998, pp. 9252-9257; J. A. Hoffnagle, et al., “Liquid Immersion Deep Ultraviolet Interferometric Lithography,” J. Vac. Sci. Technol. B, Vol. 17, No. 6, November/December, 1999, pp. 3306-3309; M. Switkes, et al., “Patterning of Sub-50 nm Dense Features with Space-Invariant 157 nm Interference Lithography,” Applied Physics Letters, Vol. 77, No. 20, Nov. 13, 2000, pp. 3149-3151.
- the wetting behavior and morphology of thin films of P(S-b-MMA) on surfaces nanopatterned using EUV interferometric lithography were studied as a function of the commensurability between pattern period and lamellar period.
- the film thickness was about equal to L 0 .
- TEM images were obtained with staining of the PS block with RuO 4 , so that the PS block appears darker than the PMMA block, and confirm a perpendicular orientation of lamellae, with the lamellae amplifying the surface pattern.
- the lamellae were ordered over distances of several micrometers.
- the experimental conditions were very similar to the optimal conditions determined by simulations: (1) the pattern period substantially equaled L 0 , and (2) the film thickness was ⁇ L 0 .
- the condition of neutral upper surface varied slightly in that the free surface of the film was slightly preferential to the PS block.
- the upper surface was a free surface compared to a confined surface in the simulations.
- block copolymers include poly(styrene-b-isoprene), poly(styrene-b-butadiene), and poly(styrene-b-vinylpyridine).
- interferometric patterning is well suited for preparing substrates to guide the self-assembly of lamellar and cylindrical morphologies because the interference patterns and the block copolymer morphologies exhibit the same symmetry.
- crossing two coherent beams of light or using an interferometer such as a Lloyd's mirror interferometer results in alternating constructive and destructive interference “stripes” to guide the self-assembly of lamellar domains.
- Double exposure of stripes with an included angle of 120°, or intersecting three equally spaced beams of light results in patterns with six-fold symmetry, or spots of constructive interference in a hexagonal array, which are utilized for guiding the self-assembly of cylindrical domains.
- two Lloyd's mirrors can be mounted with an included angle between them of 120°.
- the EUV beam illuminates the edge region, thus being reflected by both mirrors.
- the superposition of the tri-fold symmetric fields creates a triangular exposure pattern of sharp “dots” at the substrate lane, mounted perpendicularly to the symmetry axis of the system.
- the Lloyd's mirror system design is very tolerant of alignment.
- the lattice constant of the three-fold pattern can be easily changed by adjusting the incidence angle of the incoming beam. It is also important to notice that where the maxima of the fringes overlap, a bright spot is formed with an intensity equal to nine times that of the incoming beam.
- the type of pattern obtained is shown in FIG. 3 .
- the interferometer preferably is integrated in a small volume, in order to increase stiffness and minimize vibrations. Piezoelectric actuators may be used to align and maintain the alignment of the mirrors. A similar arrangement can be implement with two mirrors at 90°, yielding a rectangular pattern.
- the process is carried out as illustrated in FIG. 4.
- a substrate 10 has an imaging layer 11 formed thereon that is patterned with EUV as described above.
- the resulting patterned imaging layer 13 is then covered with a layer of a selected block copolymer 15 , and the copolymer layer is then annealed to form an array of self assembled separated domains 17 of one polymer that are surrounded by the other polymer 18 .
- Selective functionalization of the patterned structure may then be carried out, e.g., by etching out or otherwise removing the polymer in the domains 17 and filling the openings with another material, for example, a metal such as copper or nickel or a conducting polymer to form cells 20 .
- the individual cells 20 formed in this manner may be characterized in various ways, such as by the use of a scanning probe 22 as shown in FIG. 4 .
- the following discusses the morphology of thin films of asymmetric (cylinder-forming) diblock copolymers on nano-patterned substrates. Monte Carlo simulations were used to avoid the assumptions implicit in theoretical work. If the substrate is patterned with an array, (e.g., a hexagonal array) of regions as shown in FIG. 5 that are preferentially wet by the minority component of the block copolymer, and the period of the surface pattern is commensurate with the period in the imaging layer, then the cylindrical domains in the block copolymer film will orient perpendicular to the substrate and amplify the surface pattern throughout the thickness of the film with long-range order.
- an array e.g., a hexagonal array
- Perpendicular orientation and long-range order of hexagonally packed cylinders in the film can also occur on striped surfaces of the type as shown in FIG. 6, with appropriate pattern dimensions and strengths of molecular level interactions between the polymer and the substrate over which these desirable configurations are achieved.
- one lattice unit represents one Kuhn segment of a real polymer chain (which is about 0.5 ⁇ 0.7 nm for flexible polymers such as polystyrene); our system is therefore in the range of molecular weights that are suitable for lithographic processes.
- the upper surface is homogenous (denoted by sH).
- sH perpendicular cylinders
- the lower substrate is chemically nano-patterned.
- L x 67( ⁇ 4L 0 ).
- Contour plots were made of the two-dimensional order parameter profiles ⁇ A (x,y) ⁇ B (x,y)> and ⁇ A (y,z) ⁇ B (y,z)> for the morphology that arises between a lower stripe-patterned substrate and an upper sH surface; here ⁇ A (x,y), for example, is the function of lattice sites occupied by the A segments at a given (x,y) and ⁇ > represents the average over the z direction for each collected configuration, and then over all collected configurations (at equilibrium).
- Such ensemble-averaged profiles are more meaningful and conclusive for characterization of different morphologies than visual inspection of a few snapshots of the system configuration.
- Perpendicular cylinders are formed throughout the entire film, and are located on the light stripes. Due to the staggered packing of cylinder layers (in the x-z plane), ⁇ A (x,z) ⁇ B (x,z)> only exhibits small variations around ⁇ 0.35, which is consistent with the average density (fraction of occupied lattice sites) ⁇ > ⁇ 0.7 of copolymers in our simulations. (Such a density corresponds to highly concentrated solutions or melts of copolymers.).
- each “instantaneous” configuration collected after equilibration shows well-ordered, hexagonally packed perpendicular cylinders. It is anticipated that the “grain” size in this case is larger than that obtained by the use of a homogeneous substrate, i.e., the long-range ordering of perpendicular cylinders can be obtained by the use of a stripe-patterned substrate.
- the shape of ⁇ A (z) ⁇ B (z)> reflects the undulation of A-B interfaces in the perpendicular cylinders.
- a hexagonally patterned substrate as shown in FIG. 5, can be obtained by double exposure at an angle of 120°, so that the light (sA) regions are regular-hexagonally packed and the rest are sB regions.
- FIG. 9 shows contour plots of the two-dimensional order parameter profiles ⁇ A (x,y) ⁇ B (x,y)> and ⁇ A (x,z) ⁇ B (x,z)> for the morphology between a lower hexagonally patterned substrate and an upper sH surface. It is seen that perpendicular cylinders registered with the substrate pattern form throughout the entire film. The maximum values of ⁇ A (x,y) ⁇ B (x,y)> are about 0.7. The long-range ordering of perpendicular cylinders is successfully induced by the hexagonally patterned substrate. In this case the hexagonal pattern is transposed with respect to those obtained in previous cases, i.e., we have a staggered packing of cylinder layers in the y-z plane.
- ⁇ A (x,z) ⁇ B (x,z)> is similar to the quantity ⁇ A (y,z) ⁇ B (y,z)> and ⁇ A (y,z) ⁇ B (y,z)> now exhibits small variations around ⁇ 0.35.
- the sA regions are rhombus in this case, the A domains shown in the figure of ⁇ A (x,y) ⁇ B (x,y)> are still circular. This implies that the detailed shape of the sA regions is not crucial; instead, the arrangement of the sA regions is more important.
- the patterned substrate obtained by intersecting three equally spaced beams of light, i.e., spots of constructive interference in a hexagonal array, would work even better if the spacing between the spots is commensurate with the bulk period.
- both perpendicular and parallel orientations of the cylinders can be obtained by tuning the alternating stripe preference for the two blocks.
- the long-range ordering of perpendicular cylinders can be induced by a stripe-patterned substrate.
- An even better ordering can be obtained by employing a hexagonally patterned substrate commensurate with perpendicular cylinders having the same dimensions and packing as in the bulk.
- Polished 100 mm diameter silicon ⁇ 100> wafers were purchased from Tygh Silicon and used as substrates for deposition of films.
- Octadecyltrichlorosilane (CH 3 (CH 2 ) 17 SiCl 3 , 95%) was purchased from Gelest and was used as received.
- Toluene 99.8%, anhydrous
- chlorofrom 99+%, anhydrous
- Symmetric poly(styrene-block-methyl methacrylate) block copolymers were purchased from Polymer Source Inc.
- the exposures were carried out in a chamber with a pressure of 100 mTorr of oxygen.
- the intensity of the incident radiation to the surface of SA films was about 10 mW/cm 2 .
- the period of the fringe pattern for all exposures was verified by patterning UV6 photoresist (Shipley) after the system was configured with a particular geometry. Metrology of the photoresist was performed using scanning electron microscopy (Hitachi 6180 CD).
- the line and space structures of photoresist were often not exactly symmetric, as is the latent image (the interference pattern), but the period does not depend on symmetry and could be accurately determined by averaging over a large number of structures.
- n the index of refraction
- the polymer films were annealed at 180° C. in a vacuum oven for 24 h. After annealing, the films were investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM).
- AFM atomic force microscopy
- TEM transmission electron microscopy
- the surface topography of the polymer films was characterized using AFM.
- AFM measurements were performed in air in both contact mode and tapping mode with a Nanoscope III MultiMode system (Digital Instruments). In tapping mode, both topography and phase image were obtained simultaneously.
- the typical imaging force in contact mode was on the order of 10 ⁇ 9 N.
- We used both oxide-sharpened silicon nitride tips (radii 5-40 nm, Digital Instruments) and carbon nanotips (radii ⁇ 5 nm, Piezomax Technologies, Inc.) to image the topography of the polymer surface.
- the internal structure of the films was studied using TEM.
- TEM was performed on a JEOL 200CX at 200 kV in the bright field mode at the Materials Science Center at the University of Wisconsin-Madison. Samples were imaged in plane-view.
- a layer of carbon (ca. 20 nm thick) was evaporated onto the surface of films and then covered with a 25% aqueous solution of poly-(acrylic acid) (PAA). After the sample was dried in air overnight, the P(S-b-MMA)-carbon-PAA composite was peeled off the substrate and floated on deionized water with the PAA side down. After the PAA layer dissolved, the floating film was collected onto TEM grids. The films were then exposed to the vapor of the RuO 4 solution for 15 min. The RuO 4 selectively stains the PS block and provides contrast in electron density.
- FIG. 10 A schematic of the EUV interferometer exposure system utilized for the foregoing example is shown in FIG. 10 .
- An Au-coated polished silicon wafer 30 (prepared by vacuum deposition with a root-mean-square roughness ⁇ 0.32 nm) was used as a Lloyd's mirror set at an angle ⁇ to the EUV beam 31 from a radiation source 32 (e.g., a synchrotron light source) to reflect part of an incident beam at grazing incidence and interfere with the direct beam at the sample plane.
- the fringe period is given by ⁇ /(2 sin ⁇ ) where ⁇ is the angle of incidence with the Lloyd's mirror.
- the theoretical limit is 6.7 nm for the minimum printable period for incident radiation with a wavelength of 13.4 nm.
- a silicon wafer 34 with an imaging layer 35 of OTS thereon is placed at the downstream end of the mirror 30 so as to irradiate the layer 35 with the directly incident beam 31 from the source and a beam 37 reflected from the mirror 30 which are incident on the imaging layer 35 at an angle to each other to form interference fringe patterns.
- the number of fringes depends on the spatial and temporal coherence of the source.
- the spatial coherence depends on the size of the light source and distance from the source. In the experimental setup, temporal coherence ultimately limits the number of fringes, and the source can be considered to be spatially coherent for practical purposes.
- the finite temporal coherence limits the allowed optical path difference between the direct and reflected beams for producing fringes.
- the number of fringes, m is proportional to ⁇ / ⁇ .
- the interferometer can be operated with or without a monochromator (not shown) in the path of the beam before the mirror.
- the monochromator With the monochromator, the beam intensity is low, but ⁇ / ⁇ is approximately 1000. In this mode, approximately 1000 fringes were produced. If the fringe period was 40 nm, for example, the width of the patterned area observed in patterns of photoresist was 40 ⁇ m. Without the monochromator, the number of the fringes produced is 15-20 ( ⁇ / ⁇ 15-20), but the intensity of the beam is approximately 60 times greater than that of the monochromatic beam. Because of differences in sensitivity and contrast between photoresist and OTS imaging layers, the number of fringes that were observed in patterned photoresist was significantly greater than the number of fringes that were observed on patterned OTS.
- Exposures of OTS with grating periods of about 60 nm were performed without the monochromator so as to reduce the exposure times to approximately 50-60 s compared to about 1 h with the monochromator.
- the length of the exposed area corresponded to the width of the beam, about 5 mm.
- the 30 nm features on the patterned SA films of OTS with the smallest grating periods are the smallest reported features on SA films of alkylsiloxanes patterned using a parallel patterning technique.
- the period of the fringe pattern, L s was found to be 900 nm.
- the initial film thickness of the block copolymer was 66 ⁇ 2 nm (2.2L 0 ). With knowledge of the initial film thickness and L 0 , the formation of topography on the surface of the film and the type of topography were used to determine the wetting of the block copolymer at the substrate. For the initial thickness of 2.2L 0 , island formation was indicative of symmetric wetting, and hole formation was indicative of asymmetric wetting. Three different regions were observed on this sample.
- the left side of the surface was unexposed because it was in the shadow of the mirror. Islands with heights of about 30 nm (L 0 ) were observed in this region, indicating symmetric wetting of the block copolymer with the PS block at the polymer-substrate interface and at the free surface.
- the right side of the surface was uniformly exposed because this region is outside the area where coherent fringes are produced. Holes with depths of about 30 nm were observed in the exposed region, indicating asymmetric wetting of the block copolymer.
- the PMMA block preferentially wet the polymer-substrate interface, and PS was present at the free surface.
- the topography of the block copolymer film replicated the period of the fringes of the EUV exposure. AFM measurements showed that the pattern period was 900 nm, and the difference in height between adjacent regions was 15 nm.
- the wetting behavior observed on OTS exposed to EUV radiation follows the same trends: symmetric wetting was observed on unexposed OTS or OTS exposed to low doses, and asymmetric wetting was observed on OTS exposed to high doses.
- the topography observed in the middle regions is identical to that observed on OTS patterned with X-ray lithography with dimensions of 150-1000 nm.
- Adjacent exposed and unexposed regions exhibited asymmetric and symmetric wetting, respectively, and the block copolymer film differed in height by 15 nm (1 ⁇ 2 L 0 ) across adjacent regions.
- the height difference of 1 ⁇ 2 L 0 corresponded to the difference in quantized thickness between symmetric and asymmetric wetting behavior.
- AFM images of the surface of P(S-b-MMA) films after they were annealed on OTS that had been patterned with EUV interferometer with periods of 240 nm and 120 nm showed that the period of the fringe pattern was replicated with great fidelity by the undulating topography of the polymer films.
- the difference in height between exposed and unexposed regions for both cases was less than 15 nm (1 ⁇ 2 L 0 ).
- the EUV interferometer to produce Fresnel diffraction fringes.
- An AFM phase image was made of P(S-b-MMA) film after it was annealed on an OTS surface that had been exposed using the EUV interferometer configured to produce about 60 nm fringe periods.
- the initial film thickness was about 60 nm (L 0 ).
- AFM images of the topography of the polymer films revealed that surface roughness was on the order of 1 nm, but no pattern in the roughness was observed. In phase images, however, a pattern was observed on the patterned region that matched the fringe period of the exposure. On the nonpatterned unexposed and exposed regions of the samples, there was no evidence of alignment of the features in the phase image.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20040071924A1 (en) * | 2001-03-15 | 2004-04-15 | Seagate Technology Llc | Magnetic recording media having chemically modified patterned substrate to assemble self organized magnetic arrays |
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US20060131563A1 (en) * | 2004-12-20 | 2006-06-22 | Palo Alto Research Center Incorporated | Phase-separated composite films and methods of preparing the same |
US20060134556A1 (en) * | 2004-11-22 | 2006-06-22 | Wisconsin Alumni Research Foundation | Methods and compositions for forming aperiodic patterned copolymer films |
US20060183309A1 (en) * | 2003-03-06 | 2006-08-17 | Yissum Research Development Co, Of The Hebrew University Of Jerusalem | Method for manufacturing a patterned structure |
US20070175859A1 (en) * | 2006-02-02 | 2007-08-02 | International Business Machines Corporation | Methods for forming improved self-assembled patterns of block copolymers |
US20070196834A1 (en) * | 2005-09-09 | 2007-08-23 | Francesco Cerrina | Method and system for the generation of large double stranded DNA fragments |
JP2007313568A (en) * | 2006-05-23 | 2007-12-06 | Kyoto Univ | Micro-structure, pattern medium, and manufacturing method thereof |
US20080217292A1 (en) * | 2007-03-06 | 2008-09-11 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US20080230514A1 (en) * | 2007-03-19 | 2008-09-25 | The University Of Massachusetts | Method of producing nanopatterned templates |
US20080286659A1 (en) * | 2007-04-20 | 2008-11-20 | Micron Technology, Inc. | Extensions of Self-Assembled Structures to Increased Dimensions via a "Bootstrap" Self-Templating Method |
WO2008145268A1 (en) | 2007-05-26 | 2008-12-04 | Forschungszentrum Karlsruhe Gmbh | Die for micro-contact printing and method for the production thereof |
US20080299353A1 (en) * | 2004-11-22 | 2008-12-04 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
US20080311347A1 (en) * | 2007-06-12 | 2008-12-18 | Millward Dan B | Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces |
US20080318005A1 (en) * | 2007-06-19 | 2008-12-25 | Millward Dan B | Crosslinkable Graft Polymer Non-Preferentially Wetted by Polystyrene and Polyethylene Oxide |
US20090042146A1 (en) * | 2007-08-09 | 2009-02-12 | Kyoung Taek Kim | Method of forming fine patterns using a block copolymer |
US20090047790A1 (en) * | 2007-08-16 | 2009-02-19 | Micron Technology, Inc. | Selective Wet Etching of Hafnium Aluminum Oxide Films |
US20090062470A1 (en) * | 2007-08-31 | 2009-03-05 | Micron Technology, Inc. | Zwitterionic block copolymers and methods |
US20090061463A1 (en) * | 2007-05-29 | 2009-03-05 | Wisconsin Alumni Research Foundation | P-Selectin associated with Eosinophils as a marker for asthma and correlating with B-1 integrin activation |
US20090087653A1 (en) * | 2005-10-06 | 2009-04-02 | Wisconsin Alumni Research Foundation | Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates |
US20090087664A1 (en) * | 2005-10-14 | 2009-04-02 | Wisconsin Alumni Research Foundation | Directed assembly of triblock copolymers |
US7521090B1 (en) | 2008-01-12 | 2009-04-21 | International Business Machines Corporation | Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films |
US7521094B1 (en) | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US20090148795A1 (en) * | 2007-12-05 | 2009-06-11 | International Business Machines Corporation | Patterning method using a combination of photolithography and copolymer self-assemblying lithography techniques |
US20090155725A1 (en) * | 2007-12-14 | 2009-06-18 | Shi-Yong Yi | Method of fine patterning semiconductor device |
US20090181171A1 (en) * | 2008-01-11 | 2009-07-16 | International Business Machines Corporation | Method of Controlling Orientation of Domains in Block Copolymer Films |
US20090191713A1 (en) * | 2008-01-29 | 2009-07-30 | Samsung Electronics Co., Ltd. | Method of forming fine pattern using block copolymer |
US20090196488A1 (en) * | 2007-12-07 | 2009-08-06 | Wisconsin Alumni Research Foundation | Density multiplication and improved lithography by directed block copolymer assembly |
US20090200646A1 (en) * | 2008-02-13 | 2009-08-13 | Millward Dan B | One-Dimensional Arrays of Block Copolymer Cylinders and Applications Thereof |
US20090240001A1 (en) * | 2008-03-21 | 2009-09-24 | Jennifer Kahl Regner | Methods of Improving Long Range Order in Self-Assembly of Block Copolymer Films with Ionic Liquids |
US20090236309A1 (en) * | 2008-03-21 | 2009-09-24 | Millward Dan B | Thermal Anneal of Block Copolymer Films with Top Interface Constrained to Wet Both Blocks with Equal Preference |
US20090263628A1 (en) * | 2008-04-21 | 2009-10-22 | Millward Dan B | Multi-Layer Method for Formation of Registered Arrays of Cylindrical Pores in Polymer Films |
US20090260750A1 (en) * | 2008-04-01 | 2009-10-22 | Wisconsin Alumni Research Foundation | Molecular transfer printing using block copolymers |
US20090274887A1 (en) * | 2008-05-02 | 2009-11-05 | Millward Dan B | Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders |
CN100568450C (en) * | 2006-10-30 | 2009-12-09 | 国际商业机器公司 | Be used to aim at the method and structure of the stratiform microdomain of the block copolymer on the substrate |
US20090311363A1 (en) * | 2008-06-17 | 2009-12-17 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
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US20100075116A1 (en) * | 2008-09-19 | 2010-03-25 | Russell Thomas P | Self-assembly of block copolymers on topographically patterned polymeric substrates |
US20100086801A1 (en) * | 2008-09-25 | 2010-04-08 | Russell Thomas P | Method of producing nanopatterned articles, and articles produced thereby |
US20100112308A1 (en) * | 2008-09-19 | 2010-05-06 | Russell Thomas P | Method of producing nanopatterned articles, and articles produced thereby |
US20100159214A1 (en) * | 2008-12-22 | 2010-06-24 | Hirokazu Hasegawa | High-molecular thin film, pattern medium and manufacturing method thereof |
US20100163180A1 (en) * | 2007-03-22 | 2010-07-01 | Millward Dan B | Sub-10 NM Line Features Via Rapid Graphoepitaxial Self-Assembly of Amphiphilic Monolayers |
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US20100316849A1 (en) * | 2008-02-05 | 2010-12-16 | Millward Dan B | Method to Produce Nanometer-Sized Features with Directed Assembly of Block Copolymers |
US20110033786A1 (en) * | 2007-06-04 | 2011-02-10 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US20110039061A1 (en) * | 2009-02-19 | 2011-02-17 | Massachusetts Institute Of Technology | Directed material assembly |
US20110059299A1 (en) * | 2009-09-04 | 2011-03-10 | International Business Machines Corporation | Method of Forming Self-Assembled Patterns Using Block Copolymers, and Articles Thereof |
US20110076460A1 (en) * | 2009-09-28 | 2011-03-31 | Hyundai Motor Company | Plastic with nano-embossing pattern and method for preparing the same |
US20110096436A1 (en) * | 2009-10-22 | 2011-04-28 | Hitachi Global Storage Technologies Netherlands B.V. | Patterned magnetic recording disk with patterned servo sectors and method using block copolymers for making a master mold for nanoimprinting the disk |
US20110143095A1 (en) * | 2008-08-28 | 2011-06-16 | Tada Yasuhiko | Microfine structure and process for producing same |
US7964107B2 (en) | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
US20110147985A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly and layered structures formed therefrom |
US20110147984A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly, and layered structures formed therefrom |
US20110147983A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly and layered structures formed therefrom |
US7999353B1 (en) * | 2005-04-26 | 2011-08-16 | Northwestern University | Mesoscale pyramids, hole arrays and methods of preparation |
US20110232515A1 (en) * | 2007-04-18 | 2011-09-29 | Micron Technology, Inc. | Methods of forming a stamp, a stamp and a patterning system |
WO2012106120A2 (en) * | 2011-01-31 | 2012-08-09 | Seagate Technology Llc | Forming block copolymer into self-assembled columns |
US20120214094A1 (en) * | 2011-02-23 | 2012-08-23 | Satoshi Mikoshiba | Method of forming pattern |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8394579B2 (en) | 2008-10-09 | 2013-03-12 | Micron Technology, Inc. | Methods of forming patterns |
US8450418B2 (en) | 2010-08-20 | 2013-05-28 | Micron Technology, Inc. | Methods of forming block copolymers, and block copolymer compositions |
US20130230705A1 (en) * | 2012-03-02 | 2013-09-05 | Wisconsin Alumni Research Foundation | Patterning in the directed assembly of block copolymers using triblock or multiblock copolymers |
US8551808B2 (en) | 2007-06-21 | 2013-10-08 | Micron Technology, Inc. | Methods of patterning a substrate including multilayer antireflection coatings |
US8575587B2 (en) | 2011-03-07 | 2013-11-05 | Kabushiki Kaisha Toshiba | Storage device and method of manufacturing the same |
US8669645B2 (en) | 2008-10-28 | 2014-03-11 | Micron Technology, Inc. | Semiconductor structures including polymer material permeated with metal oxide |
US8734904B2 (en) | 2010-11-30 | 2014-05-27 | International Business Machines Corporation | Methods of forming topographical features using segregating polymer mixtures |
WO2014123582A1 (en) * | 2013-02-11 | 2014-08-14 | Pixelligent Technologies, Llc | Block co-polymer photoresist |
US8815105B2 (en) | 2011-02-28 | 2014-08-26 | HGST Netherlands B.V. | Method using block copolymers for making a master mold for nanoimprinting patterned magnetic recording disks with chevron servo patterns |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US8986488B2 (en) | 2010-07-28 | 2015-03-24 | Kabushiki Kaisha Toshiba | Pattern formation method and polymer alloy base material |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9156682B2 (en) | 2011-05-25 | 2015-10-13 | The University Of Massachusetts | Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9269384B1 (en) | 2015-05-29 | 2016-02-23 | Seagate Technology Llc | Template misalignment and eccentricity error compensation for a patterned medium |
US9275676B2 (en) | 2014-02-28 | 2016-03-01 | Seagate Technology Llc | Skew compensation in a patterned medium |
US9299381B2 (en) | 2011-02-07 | 2016-03-29 | Wisconsin Alumni Research Foundation | Solvent annealing block copolymers on patterned substrates |
US9394411B2 (en) | 2013-12-31 | 2016-07-19 | Dow Global Technologies Llc | Methods for annealing block copolymers and articles manufactured therefrom |
US9718250B2 (en) | 2011-09-15 | 2017-08-01 | Wisconsin Alumni Research Foundation | Directed assembly of block copolymer films between a chemically patterned surface and a second surface |
US9738814B2 (en) | 2013-12-31 | 2017-08-22 | Dow Global Technologies Llc | Method of controlling block copolymer characteristics and articles manufactured therefrom |
US9828518B2 (en) | 2013-12-31 | 2017-11-28 | Dow Global Technologies Llc | Copolymer formulations, methods of manufacture thereof and articles comprising the same |
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---|---|---|---|---|
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US7579278B2 (en) * | 2006-03-23 | 2009-08-25 | Micron Technology, Inc. | Topography directed patterning |
US7723009B2 (en) * | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
KR20090024246A (en) * | 2006-06-27 | 2009-03-06 | 제이에스알 가부시끼가이샤 | Method of forming pattern and composition for forming of organic thin-film for use therein |
EP2048541A4 (en) * | 2006-08-04 | 2010-12-01 | Jsr Corp | Method of forming pattern, composition for forming upper-layer film, and composition for forming lower-layer film |
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US7790350B2 (en) * | 2007-07-30 | 2010-09-07 | International Business Machines Corporation | Method and materials for patterning a neutral surface |
WO2009058180A2 (en) * | 2007-09-27 | 2009-05-07 | Massachusetts Institute Of Technology | Self-assembly technique applicable to large areas and nanofabrication |
US7906031B2 (en) * | 2008-02-22 | 2011-03-15 | International Business Machines Corporation | Aligning polymer films |
US20090239334A1 (en) * | 2008-03-20 | 2009-09-24 | International Business Machines Corporation | Electrode formed in aperture defined by a copolymer mask |
US8268545B2 (en) * | 2008-06-09 | 2012-09-18 | Seagate Technology Llc | Formation of a device using block copolymer lithography |
US8404600B2 (en) | 2008-06-17 | 2013-03-26 | Micron Technology, Inc. | Method for forming fine pitch structures |
US8993060B2 (en) * | 2008-11-19 | 2015-03-31 | Seagate Technology Llc | Chemical pinning to direct addressable array using self-assembling materials |
TWI385809B (en) * | 2008-12-17 | 2013-02-11 | Ind Tech Res Inst | Surface texturization method |
US8048795B2 (en) * | 2009-07-10 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-assembly pattern for semiconductor integrated circuit |
US8563086B2 (en) | 2009-07-22 | 2013-10-22 | Korea Institute Research and Business Foundation | Nano pattern formation |
US8592732B2 (en) | 2009-08-27 | 2013-11-26 | Korea University Research And Business Foundation | Resistive heating device for fabrication of nanostructures |
US8822139B2 (en) * | 2010-04-14 | 2014-09-02 | Asml Netherlands B.V. | Method for providing an ordered layer of self-assemblable polymer for use in lithography |
DK2563450T3 (en) | 2010-04-28 | 2017-11-13 | Kimberly Clark Co | Apparatus for administering rheumatoid arthritis drug |
US9522262B2 (en) | 2010-04-28 | 2016-12-20 | Kimberly-Clark Worldwide, Inc. | Medical devices for delivery of siRNA |
US9586044B2 (en) | 2010-04-28 | 2017-03-07 | Kimberly-Clark Worldwide, Inc. | Method for increasing the permeability of an epithelial barrier |
CA2796196C (en) | 2010-04-28 | 2019-05-28 | Kimberly-Clark Worldwide, Inc. | Composite microneedle array including nanostructures thereon |
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JP5259661B2 (en) * | 2010-09-07 | 2013-08-07 | 株式会社東芝 | Pattern formation method |
US8450043B2 (en) * | 2010-09-30 | 2013-05-28 | International Business Machines Corporation | Patterning nano-scale patterns on a film comprising unzipping copolymers |
JP6035017B2 (en) | 2010-10-04 | 2016-11-30 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Lower layer composition and method for imaging lower layer |
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US9233840B2 (en) | 2010-10-28 | 2016-01-12 | International Business Machines Corporation | Method for improving self-assembled polymer features |
US8673541B2 (en) | 2010-10-29 | 2014-03-18 | Seagate Technology Llc | Block copolymer assembly methods and patterns formed thereby |
US20120196094A1 (en) * | 2011-01-31 | 2012-08-02 | Seagate Technology Llc | Hybrid-guided block copolymer assembly |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195410B1 (en) * | 1999-01-26 | 2001-02-27 | Focused X-Rays, Llc | X-ray interferometer |
-
2001
- 2001-10-05 US US09/971,442 patent/US6746825B2/en not_active Expired - Lifetime
-
2004
- 2004-03-15 US US10/800,923 patent/US6926953B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195410B1 (en) * | 1999-01-26 | 2001-02-27 | Focused X-Rays, Llc | X-ray interferometer |
Non-Patent Citations (37)
Title |
---|
A. Yen, et al., "Achromatic Holographic Configuration for 100-nm-Period Lithography," Applied Optics, vol. 31, No. 22, Aug. 1, 1992, pp. 4540-4545. |
Alexander C. Edrington, et al., "Polymer-Based Photonic Crystals," Advanced Materials, vol. 13, No. 6, Mar. 16, 2001, pp. 421-425. |
Augustine Urbas, et al., "Tunable Block Copolymer/Homopolymer Photonic Crystals," Advanced Materials, vol. 12, No. 11, pp. 812-814. |
C.T. Black, et al., "Integration of Self-Assembled Diblock Copolymers for Semiconductor Capacitor Fabrication," Applied Physics Letters, vol. 79, No. 3, Jul. 16, 2001, pp. 409-411. |
Christopher Harrison, et al., "Reducing Substrate Pinning of Block Copolymer Microdomains with a Buffer Layer of Polymer Brushes," Micromolecules, vol. 33, 2000, published on web Dec. 28, 1999, pp. 857-865. |
Didier Benoit, et al., "One-Step Formation of Functionalized Block Copolymers," Macromolecules, vol. 33, 2000, published on web Feb. 12, 2000, pp. 1505-1507. |
H.H. Solak, et al., "Exposure of 38 nm Period Gratings Patterns with Extreme Ultraviolet Interferometric Lithography," Applies Physics Letters, vol. 75, 1999, pp. 2328-2330. |
Hideaki Yokoyama, et al., "Structure and Diffusion of Asymmetric Diblock Copolymers in Thin Films: A Dynamic Secondary Ion Mass Spectrometry Study," Macromolecules, vol. 31, 1998, published on web Nov. 20, 1998, pp. 8826-8830. |
J.A. Hoffnagle, et al., "Liquid Immersion Deep-Ultraviolet Interferometric Lithography," J. Vac. Sci. Technol. B, vol. 17, No. 6, Nov./Dec., 1999, pp. 3306-3309. |
Jakob Heier, et al., "Kinetics of Individual Block Copolymer Island Formation and Disappearance Near an Absorbing Boundary," Macromolecules, vol. 33, 2000, published on web Jul. 7, 2000, pp. 6060-6067. |
M. Switkes, et al., "Patterning of Sub-50 nm Dense Features with Space-Invariant 157 nm Interference Lithography," Applied Physics Letters, vol. 77, No. 20, Nov. 13, 2000, pp. 3149-3151. |
Miri Park, et al., "Block Copolymer Lithography: Periodic Arrays of ~1011 Holes in 1 Square Centimeter," Science, vol. 276, No. 5317, May 30, 1997, pp. 1401-1404. |
Miri Park, et al., "Block Copolymer Lithography: Periodic Arrays of ˜1011 Holes in 1 Square Centimeter," Science, vol. 276, No. 5317, May 30, 1997, pp. 1401-1404. |
Nath, S. K. et al., "Density functional theory of molecular structure for thin diblock copolymer films on chemically heterogeneous surfaces," Journal of Chemical Physics, 110(15), Apr. 15, 1999; published by American Institute of Physics. |
P. Mansky, et al., "Ordered Diblock Copolymer Films on Random Copolymer Brushes," Macromolecules, vol. 30, 1997, pp. 6810-6813. |
Peters, R.D. et al., "Combining advanced lithographic techniques and self-assembly of thin films of diblock copolymers to produce templates for nanofabrication," J. Vac. Sci. Technol. B, 18(6), Nov/Dec 2000, pp. 3530-3534; published by American Vacuum Society. |
Qiang Wang, et al., "Symmetric Diblock Copolymer Thin Films Confined Between Homogeneous and Patterned Surfaces: Simulations and Theory," J. of Chemical Physics, vol. 112, No. 22, Jun. 8, 2000, pp. 9996-10010. |
Richard D. Peters, et al., "Combining Advanced Lithographic Techniques and Self-Assembly of Thin Films of Diblock Copolymers to Produce Templates for Nanofabrication," J. Vac. Sci. Technol. B, vol. 18, No. 6, Nov./Dec., 2000, pp. 1-5. |
Richard D. Peters, et al., "Using Self-Assembled Monolayers Exposed to X-Rays to Control the Wetting Behavior of Thin Films on Diblock Copolymers," Langmuir, vol. 16, 2000, published on web Apr. 7, 2000, pp. 4625-4631. |
Rob G.H. Lammertink, et al., "Nanostructured Thin Films of Organic-Organometallic Block Copolymers: One-Step Lithography with Poly(ferrocenylsilanes) by Reactive Ion Etching," Advanced Materials, vol. 12, No. 2, 2000, pp. 98-102. |
Solak, H. H. et al., "EUV Inteferometric Lithography for Resist Characterization," SPIE, vol. 3676, Santa Clara, California, Mar. 1999. |
T. Thurn-Albrecht, et al., "Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates," Science, vol. 290, No. 5499, Dec. 15, 2000, pp. 2126-2129. |
T.A. Savas, et al., "Achromatic Interferometric Lithography for 100-nm-Period Gratings and Grids," J. Vac. Sci. Technol. B, vol. 13, No. 6, Nov./Dec., 1995, pp. 2732-2735. |
T.A. Savas, et al., "Large-Area Achromatic Interferometric Lithography for 100 nm Period Gratings and Grids," J. Vac. Sci. Technol. B, vol. 14, No. 6, Nov./Dec., 1996, pp. 4167-4170. |
Tae K. Kim, et al., "Chemical Modification of Self-Assembled Monolayers by Exposure to Soft X-Rays in Air," J. Phys. Chem. B, vol. 104, 2000, published on web, Jul. 18, 2000, pp. 7403-7410. |
Thomas Thurn-Albrecht, et al., "Nanoscopic Templates from Oriented Block Copolymer Films," Advanced Materials, vol. 12, No. 11, 2000, pp. 787-791. |
V.Y. Banine, et al., "Comparison of Extreme Ultraviolet Sources for Lithography Applications," Micorelectronic Engineering, vol. 53, 2000, pp. 681-684. |
Wang, Q. et al., "Monte Carlo Simulations of Asymmetric Diblock Copolymer Thin Films Confined between Two Homogeneous Surfaces," Macromolecules, 2001, 34, pp. 3458-3470; published by American Chemical Society. |
Wang, Q. et al., "Monte Carlo Simulations of Diblock Copolymer Thin Films Confined between Chemically Heterogeneous Hard Surfaces," Macromolecules, 2000, 33, pp. 4512-4525; published by American Chemical Society. |
Wang, Q. et al., "Monte Carlo simulations of diblock copolymer thin films confined between two homogeneous surfaces," Journal of Chemical Physics, 112(1), Jan. 1, 2000; published by American Institute of Physics. |
Wieland Schöllkopf, et al., "A Cluster Size Nanofilter with Variable Openings Between 2 and 50 nm," J. of Chemical Physics, vol. 109, No. 21, Dec. 1, 1998, pp. 9252-9257 |
Xiao M. Yang, et al., "Guided Self-Assembly of Symmetric Diblock Copolymer Films on Chemically Nanopatterned Substrates," Macromolecules, vol. 33, 2000, published on web Dec. 26, 2000, pp. 9575-9582. |
Xiaolan Chen, et al., "Interferometric Lithography of Sub-Micrometer Sparse Hole Arrays for Field-Emission Display Applications," J. Vac. Sci. Technol. B, vol. 14, No. 5, Sep./Oct., 1996, pp. 3339-3349. |
Yachin Cohen, et al., "Deformation of Oriented Lamellar Block Copolymer Films," Macromolecules, vol. 33, 2000, published on web Aug. 5, 2000, pp. 6502-6516. |
Yang, X. M. et al., "Patterning of self-assembled monolayers with lateral dimensions of 0.15 mum using advanced lithography," J. Vac. Sci. Technol. B, 17(6), Nov/Dec 1999, pp. 3203-3207; published by American Vacuum Society. |
Yang, X. M. et al., "Proximity X-ray Lithography Using Self-Assembled Alkylsiloxane Films: Resolution and Pattern Transfer," Langmuir, 2001, 17, pp. 228-233; published by American Chemical Society. |
Yang, X. M. et al., "Patterning of self-assembled monolayers with lateral dimensions of 0.15 μm using advanced lithography," J. Vac. Sci. Technol. B, 17(6), Nov/Dec 1999, pp. 3203-3207; published by American Vacuum Society. |
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US7521094B1 (en) | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US20090191713A1 (en) * | 2008-01-29 | 2009-07-30 | Samsung Electronics Co., Ltd. | Method of forming fine pattern using block copolymer |
US11560009B2 (en) | 2008-02-05 | 2023-01-24 | Micron Technology, Inc. | Stamps including a self-assembled block copolymer material, and related methods |
US10828924B2 (en) | 2008-02-05 | 2020-11-10 | Micron Technology, Inc. | Methods of forming a self-assembled block copolymer material |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US20100316849A1 (en) * | 2008-02-05 | 2010-12-16 | Millward Dan B | Method to Produce Nanometer-Sized Features with Directed Assembly of Block Copolymers |
US10005308B2 (en) | 2008-02-05 | 2018-06-26 | Micron Technology, Inc. | Stamps and methods of forming a pattern on a substrate |
US8642157B2 (en) | 2008-02-13 | 2014-02-04 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US20090200646A1 (en) * | 2008-02-13 | 2009-08-13 | Millward Dan B | One-Dimensional Arrays of Block Copolymer Cylinders and Applications Thereof |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US9315609B2 (en) | 2008-03-21 | 2016-04-19 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US10153200B2 (en) | 2008-03-21 | 2018-12-11 | Micron Technology, Inc. | Methods of forming a nanostructured polymer material including block copolymer materials |
US9682857B2 (en) | 2008-03-21 | 2017-06-20 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom |
US8633112B2 (en) | 2008-03-21 | 2014-01-21 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US20090236309A1 (en) * | 2008-03-21 | 2009-09-24 | Millward Dan B | Thermal Anneal of Block Copolymer Films with Top Interface Constrained to Wet Both Blocks with Equal Preference |
US11282741B2 (en) | 2008-03-21 | 2022-03-22 | Micron Technology, Inc. | Methods of forming a semiconductor device using block copolymer materials |
CN101978469B (en) * | 2008-03-21 | 2012-11-21 | 美光科技公司 | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8641914B2 (en) | 2008-03-21 | 2014-02-04 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US20090240001A1 (en) * | 2008-03-21 | 2009-09-24 | Jennifer Kahl Regner | Methods of Improving Long Range Order in Self-Assembly of Block Copolymer Films with Ionic Liquids |
US20090260750A1 (en) * | 2008-04-01 | 2009-10-22 | Wisconsin Alumni Research Foundation | Molecular transfer printing using block copolymers |
US8133341B2 (en) | 2008-04-01 | 2012-03-13 | Wisconsin Alumni Research Foundation | Molecular transfer printing using block copolymers |
US8455082B2 (en) | 2008-04-21 | 2013-06-04 | Micron Technology, Inc. | Polymer materials for formation of registered arrays of cylindrical pores |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US20090263628A1 (en) * | 2008-04-21 | 2009-10-22 | Millward Dan B | Multi-Layer Method for Formation of Registered Arrays of Cylindrical Pores in Polymer Films |
US20090274887A1 (en) * | 2008-05-02 | 2009-11-05 | Millward Dan B | Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders |
US8518275B2 (en) | 2008-05-02 | 2013-08-27 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US8993088B2 (en) | 2008-05-02 | 2015-03-31 | Micron Technology, Inc. | Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US20110235215A1 (en) * | 2008-06-17 | 2011-09-29 | Elizabeth Ann Dobisz | Patterned magnetic recording disk with high bit-aspect-ratio and master mold for nanoimprinting the disk |
US20090308837A1 (en) * | 2008-06-17 | 2009-12-17 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US7976715B2 (en) * | 2008-06-17 | 2011-07-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US8822047B2 (en) | 2008-06-17 | 2014-09-02 | HGST Netherlands B.V. | Patterned magnetic recording disk with high bit-aspect-ratio and master mold for nanoimprinting the disk |
US8257598B2 (en) | 2008-06-17 | 2012-09-04 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US8119017B2 (en) | 2008-06-17 | 2012-02-21 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US20090311363A1 (en) * | 2008-06-17 | 2009-12-17 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US20110143095A1 (en) * | 2008-08-28 | 2011-06-16 | Tada Yasuhiko | Microfine structure and process for producing same |
US20100051904A1 (en) * | 2008-09-04 | 2010-03-04 | Seagate Technology Llc | Dual-Level Self-Assembled Patterning Method and Apparatus Fabricated Using the Method |
US7713753B2 (en) | 2008-09-04 | 2010-05-11 | Seagate Technology Llc | Dual-level self-assembled patterning method and apparatus fabricated using the method |
US8247033B2 (en) | 2008-09-19 | 2012-08-21 | The University Of Massachusetts | Self-assembly of block copolymers on topographically patterned polymeric substrates |
US9335629B2 (en) | 2008-09-19 | 2016-05-10 | The University Of Massachusetts | Self-assembly of block copolymers on topographically patterned polymeric substrates |
US8581272B2 (en) | 2008-09-19 | 2013-11-12 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US20100112308A1 (en) * | 2008-09-19 | 2010-05-06 | Russell Thomas P | Method of producing nanopatterned articles, and articles produced thereby |
US20100075116A1 (en) * | 2008-09-19 | 2010-03-25 | Russell Thomas P | Self-assembly of block copolymers on topographically patterned polymeric substrates |
US8211737B2 (en) * | 2008-09-19 | 2012-07-03 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US9018649B2 (en) | 2008-09-19 | 2015-04-28 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US9636887B2 (en) | 2008-09-25 | 2017-05-02 | The University Of Massachusetts | Nanopatterned articles produced using reconstructed block copolymer films |
US9358750B2 (en) | 2008-09-25 | 2016-06-07 | The University Of Massachusetts | Nanopatterned articles produced using surface-reconstructed block copolymer films |
US8518837B2 (en) | 2008-09-25 | 2013-08-27 | The University Of Massachusetts | Method of producing nanopatterned articles using surface-reconstructed block copolymer films |
US20100086801A1 (en) * | 2008-09-25 | 2010-04-08 | Russell Thomas P | Method of producing nanopatterned articles, and articles produced thereby |
US8394579B2 (en) | 2008-10-09 | 2013-03-12 | Micron Technology, Inc. | Methods of forming patterns |
TWI426544B (en) * | 2008-10-09 | 2014-02-11 | Micron Technology Inc | Methods of utilizing block copolymer to form patterns |
US8669645B2 (en) | 2008-10-28 | 2014-03-11 | Micron Technology, Inc. | Semiconductor structures including polymer material permeated with metal oxide |
US20100159214A1 (en) * | 2008-12-22 | 2010-06-24 | Hirokazu Hasegawa | High-molecular thin film, pattern medium and manufacturing method thereof |
US8287749B2 (en) | 2008-12-22 | 2012-10-16 | Hitachi, Ltd. | High-molecular thin film, pattern medium and manufacturing method thereof |
US8551566B2 (en) | 2009-02-19 | 2013-10-08 | Massachusetts Institute Of Technology | Directed material assembly |
US20110039061A1 (en) * | 2009-02-19 | 2011-02-17 | Massachusetts Institute Of Technology | Directed material assembly |
US8722174B2 (en) | 2009-09-04 | 2014-05-13 | International Business Machines Corporation | Method of forming self-assembled patterns using block copolymers, and articles thereof |
US8349203B2 (en) | 2009-09-04 | 2013-01-08 | International Business Machines Corporation | Method of forming self-assembled patterns using block copolymers, and articles thereof |
US20110059299A1 (en) * | 2009-09-04 | 2011-03-10 | International Business Machines Corporation | Method of Forming Self-Assembled Patterns Using Block Copolymers, and Articles Thereof |
US20110076460A1 (en) * | 2009-09-28 | 2011-03-31 | Hyundai Motor Company | Plastic with nano-embossing pattern and method for preparing the same |
US8059350B2 (en) | 2009-10-22 | 2011-11-15 | Hitachi Global Storage Technologies Netherlands B.V. | Patterned magnetic recording disk with patterned servo sectors having chevron servo patterns |
US20110096436A1 (en) * | 2009-10-22 | 2011-04-28 | Hitachi Global Storage Technologies Netherlands B.V. | Patterned magnetic recording disk with patterned servo sectors and method using block copolymers for making a master mold for nanoimprinting the disk |
US20110147985A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly and layered structures formed therefrom |
US20110147983A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly and layered structures formed therefrom |
US8821978B2 (en) | 2009-12-18 | 2014-09-02 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
US20110147984A1 (en) * | 2009-12-18 | 2011-06-23 | Joy Cheng | Methods of directed self-assembly, and layered structures formed therefrom |
US8623458B2 (en) | 2009-12-18 | 2014-01-07 | International Business Machines Corporation | Methods of directed self-assembly, and layered structures formed therefrom |
US8828493B2 (en) | 2009-12-18 | 2014-09-09 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
TWI482201B (en) * | 2010-07-28 | 2015-04-21 | Toshiba Kk | Pattern forming method and high molecular alloy base material |
US8986488B2 (en) | 2010-07-28 | 2015-03-24 | Kabushiki Kaisha Toshiba | Pattern formation method and polymer alloy base material |
US8450418B2 (en) | 2010-08-20 | 2013-05-28 | Micron Technology, Inc. | Methods of forming block copolymers, and block copolymer compositions |
US8734904B2 (en) | 2010-11-30 | 2014-05-27 | International Business Machines Corporation | Methods of forming topographical features using segregating polymer mixtures |
WO2012106120A2 (en) * | 2011-01-31 | 2012-08-09 | Seagate Technology Llc | Forming block copolymer into self-assembled columns |
US9469525B2 (en) | 2011-01-31 | 2016-10-18 | Seagate Technology Llc | Modified surface for block copolymer self-assembly |
WO2012106120A3 (en) * | 2011-01-31 | 2012-11-22 | Seagate Technology Llc | Forming block copolymer into self-assembled columns |
US9299381B2 (en) | 2011-02-07 | 2016-03-29 | Wisconsin Alumni Research Foundation | Solvent annealing block copolymers on patterned substrates |
US8808973B2 (en) * | 2011-02-23 | 2014-08-19 | Kabushiki Kaisha Toshiba | Method of forming pattern |
US20120214094A1 (en) * | 2011-02-23 | 2012-08-23 | Satoshi Mikoshiba | Method of forming pattern |
US8815105B2 (en) | 2011-02-28 | 2014-08-26 | HGST Netherlands B.V. | Method using block copolymers for making a master mold for nanoimprinting patterned magnetic recording disks with chevron servo patterns |
US8575587B2 (en) | 2011-03-07 | 2013-11-05 | Kabushiki Kaisha Toshiba | Storage device and method of manufacturing the same |
US9718094B2 (en) | 2011-05-25 | 2017-08-01 | Unist Academy-Industry | Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles |
US9156682B2 (en) | 2011-05-25 | 2015-10-13 | The University Of Massachusetts | Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles |
US9718250B2 (en) | 2011-09-15 | 2017-08-01 | Wisconsin Alumni Research Foundation | Directed assembly of block copolymer films between a chemically patterned surface and a second surface |
US9431605B2 (en) | 2011-11-02 | 2016-08-30 | Micron Technology, Inc. | Methods of forming semiconductor device structures |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9372398B2 (en) * | 2012-03-02 | 2016-06-21 | Wisconsin Alumni Research Foundation | Patterning in the directed assembly of block copolymers using triblock or multiblock copolymers |
US20130230705A1 (en) * | 2012-03-02 | 2013-09-05 | Wisconsin Alumni Research Foundation | Patterning in the directed assembly of block copolymers using triblock or multiblock copolymers |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US10732512B2 (en) * | 2012-11-16 | 2020-08-04 | Hitachi High-Tech Corporation | Image processor, method for generating pattern using self-organizing lithographic techniques and computer program |
WO2014123582A1 (en) * | 2013-02-11 | 2014-08-14 | Pixelligent Technologies, Llc | Block co-polymer photoresist |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
US10049874B2 (en) | 2013-09-27 | 2018-08-14 | Micron Technology, Inc. | Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof |
US11532477B2 (en) | 2013-09-27 | 2022-12-20 | Micron Technology, Inc. | Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof |
US9828518B2 (en) | 2013-12-31 | 2017-11-28 | Dow Global Technologies Llc | Copolymer formulations, methods of manufacture thereof and articles comprising the same |
US9738814B2 (en) | 2013-12-31 | 2017-08-22 | Dow Global Technologies Llc | Method of controlling block copolymer characteristics and articles manufactured therefrom |
US9394411B2 (en) | 2013-12-31 | 2016-07-19 | Dow Global Technologies Llc | Methods for annealing block copolymers and articles manufactured therefrom |
US9275676B2 (en) | 2014-02-28 | 2016-03-01 | Seagate Technology Llc | Skew compensation in a patterned medium |
US10739673B2 (en) | 2014-06-20 | 2020-08-11 | Taiwan Semiconductor Manufacturing Company Limited | Preparing patterned neutral layers and structures prepared using the same |
US11226555B2 (en) | 2014-06-20 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company Limited | Preparing patterned neutral layers and structures prepared using the same |
US9269384B1 (en) | 2015-05-29 | 2016-02-23 | Seagate Technology Llc | Template misalignment and eccentricity error compensation for a patterned medium |
US20210103199A1 (en) * | 2019-10-04 | 2021-04-08 | University Of Rochester | Optical phased array structure and fabrication techniques |
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