JP5377857B2 - 非周期的パターン共重合体フィルムのための方法及び組成 - Google Patents
非周期的パターン共重合体フィルムのための方法及び組成 Download PDFInfo
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- 229920001577 copolymer Polymers 0.000 title claims abstract description 112
- 239000000203 mixture Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 76
- 230000000737 periodic effect Effects 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims abstract description 142
- 229920001400 block copolymer Polymers 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 230000001788 irregular Effects 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229920001519 homopolymer Polymers 0.000 claims description 54
- 229920000642 polymer Polymers 0.000 claims description 38
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 36
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 35
- 239000004793 Polystyrene Substances 0.000 claims description 28
- 238000000059 patterning Methods 0.000 claims description 27
- 230000010076 replication Effects 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 18
- 239000013545 self-assembled monolayer Substances 0.000 claims description 13
- 239000002094 self assembled monolayer Substances 0.000 claims description 9
- 229920002223 polystyrene Polymers 0.000 claims description 8
- 230000003993 interaction Effects 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 239000004014 plasticizer Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- -1 siloxane compound Chemical class 0.000 claims description 4
- 238000001015 X-ray lithography Methods 0.000 claims description 3
- 238000002408 directed self-assembly Methods 0.000 claims description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 230000003362 replicative effect Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 37
- 239000002105 nanoparticle Substances 0.000 description 36
- 241000446313 Lamella Species 0.000 description 19
- 238000003384 imaging method Methods 0.000 description 18
- 238000005452 bending Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 16
- 229920000359 diblock copolymer Polymers 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000001338 self-assembly Methods 0.000 description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 11
- 238000013459 approach Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 5
- 238000005191 phase separation Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000011370 conductive nanoparticle Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 210000003918 fraction a Anatomy 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
Description
本願は、米国特許法第119(e)条により、出典を明示することでその開示内容全体を実質上本願明細書の一部とする2004年11月22日提出の米国仮出願第60/630,484号に基づく優先権を主張する。
[基板]
あらゆる種類の基板を使用し得る。ブロック共重合体フィルムを更なる処理のためのレジストマスクとして使用する半導体用途では、シリコン又はガリウムヒ素等の基板を使用し得る。様々な実施形態によれば、基板上に結像層を提供し得る。結像層は、パターン形成又は選択的活性化が可能な任意の種類の材料を含み得る。好適な実施形態において、結像層は、ポリマープラシ又は自己組織化単分子膜を含む。自己組織化単分子膜の例は、オクタデシルトリクロロシランの自己組織化単分子膜等、シラン又はシロキサン化合物の自己組織化単分子膜を含む(Peters, R. D., Yang, X. M., Kim, T. K., Sohn, B. H., Nealey, P. F., Using Self-Assembled Monolayers Exposed to X-rays to Control the Wetting Behavior of Thin Films of Block Copolymers, Langmuir, 2000, 16, 4625-4631; Kim, T. K., Sohn, B. H., Yang, X. M., Peters, R. D., Nealey, P. F., Chemical Modification of Self-Assembled Monolayers by Exposure to Soft X-rays in Air, Journal of Physical Chemistry B, 2000, 104, 7403-7410. Peters, R. D., Yang, X. M., Nealey, P. F., Wetting behavior of block copolymers self-assembled films of alkylchlorosilanes: Effect of grafting density, Langmuir, 2000, 16, p. 9620-9626、それぞれ出典を明示することでその開示内容全体を実質上本願明細書の一部として参照する)。
非周期的パターン基板は、非周期的又は不規則な特徴のパターンを生成可能な任意の方法でパターン形成し得る。パターニングには、全ての化学、トポグラフィカル、光学、電気、機械パターニングと、基板を選択的に活性化する他の全ての方法とが含まれる。当然ながら、これらの方法は、周期パターンを生成するのにも適している。
上記のように、一部の実施形態では、本発明に従って使用されるパターンは、非周期的であり、及び/又は不規則な特徴を含む。非周期的パターンは、干渉パターンにおいて見られるような基礎となる周期性を有していないパターンと考えられる。不規則な特徴は、無向性自己組織化共重合体フィルムに見られる形状又は構成を含む。不規則な特徴の例は、角度、角、T字接合、及び輪を含む。ブロック共重合体材料がラメラ形態を示す実施形態において、不規則な特徴は、角、角度、T字接合、及び輪を含め、全ての非線形特徴を含む。ブロック共重合体材料が平行な円柱列の形態を示す実施形態においても、不規則な特徴は、全ての非線形特徴を含む。特徴の寸法は、通常、5乃至100の範囲である。基板のパターン化面積は、任意の大きさにしてよい。
ブロック共重合体材料は、ブロック共重合体を含む。ブロック共重合体は、任意の数の別個のブロック共重合体を含んでよい(即ち、ジブロック共重合体、トリブロック共重合体等)。好適な実施形態において、ブロック共重合体は、ジブロック共重合体である。具体的な例は、ジブロック共重合体PS−b−PMMAである。
以下の実施例では、本発明の態様を例示する詳細を提供する。こうした実施例は、本発明の態様を実証し、更に明確に例示するために提供されるものであり、いかなる意味でも限定的なものではない。
Claims (51)
- 重合体構造を形成する方法であって、
(a)屈曲部を備えた特徴であって少なくとも一つの不規則な特徴を有するパターンを形成した基板を提供する工程と、
(b)ブロック共重合体を含む共重合体材料の層を前記基板上に堆積させる工程と、
(c)前記共重合体材料の層内に前記少なくとも一つの不規則な特徴を含む前記パターンを、前記基板の表面に垂直方向の相分離ドメインが複製するように、前記パターンに従って前記共重合体材料の組織を方向付ける工程と、を備える方法。 - 前記少なくとも一つの不規則な特徴は、5nm乃至100nmの範囲の少なくとも一つの寸法を有する請求項1記載の方法。
- 前記ブロック共重合体は、ポリスチレン(PS)及びポリ(メチルメタクリレート)(PMMA)のブロック共重合体である請求項1又は請求項2の何れかに記載の方法。
- 前記共重合体材料は、更に、第二の共重合体、第一の単独重合体、及び第二の単独重合体の少なくとも一つを含む請求項1、請求項2、又は請求項3の何れかに記載の方法。
- 前記共重合体材料は、第一の単独重合体を含み、前記第一の単独重合体は、前記ブロック共重合体内の第一の重合体ブロックと同じ種類の重合体である請求項4記載の方法。
- 前記共重合体材料は、更に、第二の単独重合体を含み、前記第二の単独重合体は、前記ブロック共重合体内の第二の重合体ブロックと同じ種類の重合体である請求項5記載の方法。
- 前記共重合体材料は、PS−b−PMMA/PS/PMMA混合物である請求項1記載の方法。
- 前記PS−b−PMMA/PS/PMMA混合物に対する前記PS−b−PMMAの体積分率は、0.8以下である請求項7記載の方法。
- 前記PS−b−PMMAの体積分率は、0.4乃至0.6である請求項8記載の方法。
- 前記共重合体材料は、更に、可膨張性材料を含む請求項1、請求項2、又は請求項4の何れかに記載の方法。
- 前記可膨張性材料は、不揮発性溶媒、可塑剤、又は超臨界流体の少なくとも一つから選択される請求項10記載の方法。
- 前記パターンの領域は、前記共重合体材料の少なくとも一つの構成要素に関して、他の構成要素より高い相互作用を有する請求項1、請求項2、又は請求項4の何れかに記載の方法。
- 前記パターンの領域及び前記ブロック共重合体の第一のブロックの間の界面エネルギと、前記領域及び前記ブロック共重合体の第二のブロックの間の界面エネルギとの差は、少なくとも0.6ergs/cm2である請求項12記載の方法。
- パターンを形成した基板を提供する工程は、化学パターニングによるパターンを有する基板を提供する工程を備える請求項1記載の方法。
- 前記化学パターニングによるパターンは、ポリマーブラシ及び自己組織化単分子膜の少なくとも一方を備える請求項14記載の方法。
- 前記化学パターニングによるパターンは、前記ブロック共重合体材料を含む単量体の少なくとも一つの単独重合体又は共重合体を含むポリマープラシを備える請求項15記載の方法。
- 前記化学パターニングによるパターンは、シラン又はシロキサン化合物の少なくとも一方を含む自己組織化単分子膜を備える請求項15記載の方法。
- 更に、前記共重合体材料の構成要素の一つを選択的に除去する工程を備える請求項1、請求項2、請求項4、請求項12、又は請求項13の何れかに記載の方法。
- 前記共重合体材料の構成要素の一つは、絶縁体であり、前記共重合体材料の構成要素の別の一つは、導電体である請求項1、請求項2、請求項4、請求項12、請求項13又は請求項18の何れかに記載の方法。
- 前記パターンは、角度、T字接合、輪、及び角の少なくとも一つを含む請求項1、請求項2、請求項4、請求項12、請求項13、請求項18、又は請求項19の何れかに記載の方法。
- 前記パターンは、角度45°、角度90°、及び角度135°の少なくとも一つの角度による折り曲げ箇所を含む請求項1又は請求項20の何れかに記載の方法。
- 前記共重合体材料層内の前記パターン複製する工程は、前記共重合体材料の構成要素の少なくとも一つを伸張又は圧縮する工程を備える請求項1、請求項2、請求項4、請求項12、請求項13、請求項18、請求項19、又は請求項20の何れかに記載の方法。
- 前記共重合体材料は、前記基板全体で不均一に分布する請求項1、請求項2、請求項4、請求項12、請求項13、請求項18、請求項19、又は請求項20の何れかに記載の方法。
- 更に、前記基板を、X線リソグラフィ、極紫外線(EUV)リソグラフィ、又は電子ビームリソグラフィによりパターン形成する工程を含む請求項1記載の方法。
- 前記基板のパターンを、リソグラフィにより形成する工程を含み、
前記パターンは、リソグラフィックによる分解能の最小幅より小さい幅であるサブリソグラフィック分解能を有する請求項1、請求項2、請求項4、請求項12、請求項13、請求項18、請求項19、又は請求項20の何れかに記載の方法。 - 更に、リソグラフィ手法と、ブロック共重合体の有向性自己組織化との組み合わせにより基板をパターン形成する工程を含む請求項1又は請求項25の何れかに記載の方法。
- 前記パターンは、非周期的領域及び周期的領域を備える請求項1、請求項2、請求項4、請求項12、請求項13、請求項18、請求項19、又は請求項20の何れかに記載の方法。
- (a)屈曲部を備えた特徴であって少なくとも一つの不規則な特徴を有するパターンを形成した基板と、
(b)ブロック共重合体を含む共重合体材料層であって、少なくとも前記不規則な特徴を含む前記パターンが、前記基板の表面に垂直方向の相分離ドメインによって複製される共重合体材料層と
を備えた組成物。 - 前記少なくとも一つの不規則な特徴は、5nm乃至100nmの範囲の少なくとも一つの寸法を有する請求項28記載の組成物。
- 前記ブロック共重合体は、ポリスチレン(PS)及びポリ(メチルメタクリレート)(PMMA)のブロック共重合体である請求項28又は請求項29の何れかに記載の組成物。
- 前記共重合体材料層は、更に、第二の共重合体、第一の単独重合体、及び第二の単独重合体の少なくとも一つを含む請求項28、請求項29又は請求項30の何れかに記載の組成物。
- 前記共重合体材料層は、第一の単独重合体を含み、前記第一の単独重合体は、前記ブロック共重合体内の第一の重合体ブロックと同じ種類の重合体である請求項31記載の組成物。
- 前記共重合体材料層は、更に、第二の単独重合体を含み、前記第二の単独重合体は、前記ブロック共重合体内の第二の重合体ブロックと同じ種類の重合体である請求項32記載の組成物。
- 前記共重合体材料層は、PS−b−PMMA/PS/PMMA混合物である請求項28記載の組成物。
- 前記PS−b−PMMA/PS/PMMA混合物に対する前記PS−b−PMMAの体積分率は、0.8以下である請求項34記載の組成物。
- 前記PS−b−PMMAのPS−b−PMMA/PS/PMMA混合物に対する体積分率は、0.4乃至0.6である請求項35記載の組成物。
- 前記共重合体材料層は、更に、可膨張性材料を含む請求項28、請求項29又は請求項31の何れかに記載の組成物。
- 前記可膨張性材料は、揮発性又は不揮発性溶媒、可塑剤、又は超臨界流体の少なくとも一つから選択される請求項37記載の組成物。
- 前記パターンの領域は、前記共重合体材料の少なくとも一つの構成要素に関して、他の構成要素より高い相互作用を有する請求項28、請求項29又は請求項31の何れかに記載の組成物。
- 前記パターンの領域及び前記ブロック共重合体の第一のブロックの間の界面エネルギと、前記領域及び前記ブロック共重合体の第二のブロックの間の界面エネルギとの差は、少なくとも0.6ergs/cm2である請求項39記載の組成物。
- 前記パターンを形成した基板は、化学パターニングによるパターンを備える請求項28記載の組成物。
- 前記化学パターニングによるパターンは、ポリマーブラシ及び自己組織化単分子膜の少なくとも一方を備える請求項41記載の組成物。
- 前記化学パターニングによるパターンは、単独重合体または前記共重合体材料を含む単量体の共重合体の少なくとも一方を有するポリマープラシを備える請求項42記載の組成物。
- 前記化学パターニングによるパターンは、シラン及びシロキサン化合物の少なくとも一方を含む自己組織化単分子膜を備える請求項42記載の組成物。
- 前記共重合体材料の構成要素の一つは、絶縁体であり、前記共重合体材料の構成要素の別の一つは、導電体である請求項28、請求項29、請求項31請求項39又は請求項40の何れかに記載の組成物。
- 前記パターンは、角度、T字接合、輪、及び角の少なくとも一つを含む請求項28、請求項29、請求項31、請求項39、請求項40、又は請求項45の何れかに記載の組成物。
- 前記パターンは、角度45°、角度90°、及び角度135°の少なくとも一つの角度による折り曲げ箇所を含む請求項28又は請求項46の何れかに記載の組成物。
- 前記共重合体材料の少なくとも一つの構成要素は、伸張又は圧縮される請求項28、請求項29、請求項31、請求項39、請求項40、請求項45、又は請求項46の何れかに記載の組成物。
- 前記共重合体材料の構成要素は、前記基板全体で不均一に分布する請求項28、請求項29、請求項31、請求項39、請求項40、請求項45、又は請求項46の何れかに記載の組成物。
- 前記パターンは、サブリソグラフィック分解能を有する請求項28、請求項29、請求項31、請求項39、請求項40、請求項45、又は請求項46の何れかに記載の組成物。
- 前記パターンは、非周期的領域及び周期的領域を備える請求項28、請求項29、請求項31、請求項39、請求項40、請求項45、又は請求項46の何れかに記載の組成物。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101540883B1 (ko) * | 2013-07-25 | 2015-07-30 | 아르끄마 프랑스 | 블록 공중합체 및 블록 중 하나의 (공)중합체의 배합물에서 수득한 형태를 특정화하는 구간을 제어하는 방법 |
KR101756921B1 (ko) | 2015-05-26 | 2017-07-11 | 고려대학교 산학협력단 | 성형 중합체 도입을 통한 수직 배향된 블록 공중합체 박막의 제조방법 |
Families Citing this family (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8133534B2 (en) | 2004-11-22 | 2012-03-13 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
EP1827717A4 (en) | 2004-11-22 | 2011-11-23 | Wisconsin Alumni Res Found | METHOD AND COMPOSITIONS FOR FORMING APERIODICALLY PATTERNED COPOLYMER FILMS |
GR1006890B (el) * | 2005-09-16 | 2010-07-19 | Ευαγγελος Γογγολιδης | Μεθοδος για την κατασκευη επιφανειων μεγαλου επιφανειακου λογου και μεγαλου λογου ασυμμετριας σε υποστρωματα. |
US8168284B2 (en) | 2005-10-06 | 2012-05-01 | Wisconsin Alumni Research Foundation | Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates |
US8618221B2 (en) | 2005-10-14 | 2013-12-31 | Wisconsin Alumni Research Foundation | Directed assembly of triblock copolymers |
US7347953B2 (en) * | 2006-02-02 | 2008-03-25 | International Business Machines Corporation | Methods for forming improved self-assembled patterns of block copolymers |
US7723009B2 (en) * | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
US7923075B2 (en) * | 2006-07-17 | 2011-04-12 | The Hong Kong University Of Science And Technology | Methods for preparing nanotextured surfaces and applications thereof |
US9957157B2 (en) * | 2006-09-19 | 2018-05-01 | University of Houtson System | Fabrication of self assembling nano-structures |
US7544578B2 (en) * | 2007-01-03 | 2009-06-09 | International Business Machines Corporation | Structure and method for stochastic integrated circuit personalization |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US7767099B2 (en) * | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
US7964107B2 (en) | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
US8083953B2 (en) * | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US7999160B2 (en) | 2007-03-23 | 2011-08-16 | International Business Machines Corporation | Orienting, positioning, and forming nanoscale structures |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8294139B2 (en) * | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8372295B2 (en) * | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
DE102007024653A1 (de) * | 2007-05-26 | 2008-12-04 | Forschungszentrum Karlsruhe Gmbh | Stempel für das Mikrokontaktdrucken und Verfahren zu seiner Herstellung |
US7923373B2 (en) * | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8404124B2 (en) * | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8080615B2 (en) * | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US7625790B2 (en) * | 2007-07-26 | 2009-12-01 | International Business Machines Corporation | FinFET with sublithographic fin width |
KR101291223B1 (ko) * | 2007-08-09 | 2013-07-31 | 한국과학기술원 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
US8283258B2 (en) * | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US7732533B2 (en) * | 2007-08-31 | 2010-06-08 | Micron Technology, Inc. | Zwitterionic block copolymers and methods |
KR100930966B1 (ko) * | 2007-09-14 | 2009-12-10 | 한국과학기술원 | 블록공중합체의 나노구조와 일치하지 않는 형태의 표면패턴상에 형성되는 블록공중합체의 나노구조체 및 그 제조방법 |
US7808020B2 (en) | 2007-10-09 | 2010-10-05 | International Business Machines Corporation | Self-assembled sidewall spacer |
WO2009047191A1 (en) * | 2007-10-09 | 2009-04-16 | International Business Machines Corporation | Self-assembled sidewall spacer |
US8105960B2 (en) | 2007-10-09 | 2012-01-31 | International Business Machines Corporation | Self-assembled sidewall spacer |
US7828986B2 (en) * | 2007-10-29 | 2010-11-09 | International Business Machines Corporation | Forming surface features using self-assembling masks |
US9183870B2 (en) | 2007-12-07 | 2015-11-10 | Wisconsin Alumni Research Foundation | Density multiplication and improved lithography by directed block copolymer assembly |
KR101355167B1 (ko) * | 2007-12-14 | 2014-01-28 | 삼성전자주식회사 | 적어도 세 개의 고분자 블록을 구비하는 블록 공중합체를이용한 미세 패턴 형성 방법 |
US7763319B2 (en) | 2008-01-11 | 2010-07-27 | International Business Machines Corporation | Method of controlling orientation of domains in block copolymer films |
US7989026B2 (en) * | 2008-01-12 | 2011-08-02 | International Business Machines Corporation | Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films |
US7521094B1 (en) * | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US8017194B2 (en) | 2008-01-17 | 2011-09-13 | International Business Machines Corporation | Method and material for a thermally crosslinkable random copolymer |
KR20090083091A (ko) * | 2008-01-29 | 2009-08-03 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US7906031B2 (en) * | 2008-02-22 | 2011-03-15 | International Business Machines Corporation | Aligning polymer films |
US20090239334A1 (en) * | 2008-03-20 | 2009-09-24 | International Business Machines Corporation | Electrode formed in aperture defined by a copolymer mask |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
WO2009146086A2 (en) | 2008-04-01 | 2009-12-03 | Wisconsin Alumni Research Foundation | Molecular transfer printing using block copolymers |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US7976715B2 (en) * | 2008-06-17 | 2011-07-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US8119017B2 (en) | 2008-06-17 | 2012-02-21 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
US8114468B2 (en) * | 2008-06-18 | 2012-02-14 | Boise Technology, Inc. | Methods of forming a non-volatile resistive oxide memory array |
US8877073B2 (en) * | 2008-10-27 | 2014-11-04 | Canon Nanotechnologies, Inc. | Imprint lithography template |
US7560141B1 (en) | 2008-11-11 | 2009-07-14 | International Business Machines Corporation | Method of positioning patterns from block copolymer self-assembly |
KR101572109B1 (ko) | 2008-12-30 | 2015-11-27 | 삼성디스플레이 주식회사 | 나노 구조체의 제조 방법 및 이를 이용한 패턴의 제조 방법 |
US8486613B2 (en) * | 2008-12-12 | 2013-07-16 | Samsung Electronics Co., Ltd. | Method of manufacturing nano-structure and method of manufacturing a pattern using the method |
IT1392754B1 (it) * | 2008-12-18 | 2012-03-16 | St Microelectronics Srl | Nanoarray ad incrocio con strato organico attivo anisotropico |
KR101535227B1 (ko) * | 2008-12-31 | 2015-07-08 | 삼성전자주식회사 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
US8361704B2 (en) * | 2009-01-12 | 2013-01-29 | International Business Machines Corporation | Method for reducing tip-to-tip spacing between lines |
WO2010141115A2 (en) * | 2009-02-19 | 2010-12-09 | Massachusetts Institute Of Technology | Directed material assembly |
WO2010096363A2 (en) * | 2009-02-19 | 2010-08-26 | Arkema Inc. | Nanofabrication method |
KR101101767B1 (ko) | 2009-05-07 | 2012-01-05 | 한국과학기술원 | 코일―빗형 블록 공중합체 및 이를 이용한 나노 구조체의 제조방법 |
US8059350B2 (en) * | 2009-10-22 | 2011-11-15 | Hitachi Global Storage Technologies Netherlands B.V. | Patterned magnetic recording disk with patterned servo sectors having chevron servo patterns |
US8574950B2 (en) * | 2009-10-30 | 2013-11-05 | International Business Machines Corporation | Electrically contactable grids manufacture |
US8821978B2 (en) * | 2009-12-18 | 2014-09-02 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
US8828493B2 (en) * | 2009-12-18 | 2014-09-09 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
US8206601B2 (en) * | 2009-12-18 | 2012-06-26 | Hitachi Global Storage Technologies Netherlands B.V. | Supporting membranes on nanometer-scale self-assembled films |
US8623458B2 (en) * | 2009-12-18 | 2014-01-07 | International Business Machines Corporation | Methods of directed self-assembly, and layered structures formed therefrom |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
JP6035017B2 (ja) | 2010-10-04 | 2016-11-30 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 下層組成物および下層を像形成する方法 |
JP5820676B2 (ja) | 2010-10-04 | 2015-11-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 下層組成物および下層を像形成する方法 |
US9233840B2 (en) | 2010-10-28 | 2016-01-12 | International Business Machines Corporation | Method for improving self-assembled polymer features |
US9469525B2 (en) * | 2011-01-31 | 2016-10-18 | Seagate Technology Llc | Modified surface for block copolymer self-assembly |
US9299381B2 (en) | 2011-02-07 | 2016-03-29 | Wisconsin Alumni Research Foundation | Solvent annealing block copolymers on patterned substrates |
JP5254381B2 (ja) * | 2011-02-23 | 2013-08-07 | 株式会社東芝 | パターン形成方法 |
US8815105B2 (en) | 2011-02-28 | 2014-08-26 | HGST Netherlands B.V. | Method using block copolymers for making a master mold for nanoimprinting patterned magnetic recording disks with chevron servo patterns |
JP5742300B2 (ja) * | 2011-03-01 | 2015-07-01 | 凸版印刷株式会社 | 反射型マスクブランク及びその製造方法、反射型マスク |
US8956804B2 (en) * | 2011-06-23 | 2015-02-17 | Asml Netherlands B.V. | Self-assemblable polymer and methods for use in lithography |
WO2012175342A2 (en) | 2011-06-23 | 2012-12-27 | Asml Netherlands B.V. | Self-assemblable polymer and method for use in lithography |
US9718250B2 (en) | 2011-09-15 | 2017-08-01 | Wisconsin Alumni Research Foundation | Directed assembly of block copolymer films between a chemically patterned surface and a second surface |
JP6138137B2 (ja) * | 2011-10-03 | 2017-05-31 | エーエスエムエル ネザーランズ ビー.ブイ. | 自己組織化可能な重合体のためのパターン付配向テンプレートを提供する方法 |
CN103094095B (zh) * | 2011-10-28 | 2015-10-21 | 中芯国际集成电路制造(北京)有限公司 | 制造半导体器件的方法 |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US8513356B1 (en) * | 2012-02-10 | 2013-08-20 | Dow Global Technologies Llc | Diblock copolymer blend composition |
US8710150B2 (en) * | 2012-02-10 | 2014-04-29 | Rohm And Haas Electronic Materials Llc | Blended block copolymer composition |
US9372398B2 (en) | 2012-03-02 | 2016-06-21 | Wisconsin Alumni Research Foundation | Patterning in the directed assembly of block copolymers using triblock or multiblock copolymers |
JP5891075B2 (ja) * | 2012-03-08 | 2016-03-22 | 東京応化工業株式会社 | ブロックコポリマー含有組成物及びパターンの縮小方法 |
EP2642341A2 (en) * | 2012-03-22 | 2013-09-25 | Koninklijke Philips N.V. | Manufacturing method of an apparatus for the processing of single molecules |
US20140010990A1 (en) * | 2012-07-06 | 2014-01-09 | Wisconsin Alumni Research Foundation | Directed assembly of poly (styrene-b-glycolic acid) block copolymer films |
US8821739B2 (en) * | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | High temperature thermal annealing process |
US8821738B2 (en) * | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
US9012545B2 (en) * | 2012-08-31 | 2015-04-21 | Rohm And Haas Electronic Materials Llc | Composition and method for preparing pattern on a substrate |
US20140065379A1 (en) * | 2012-08-31 | 2014-03-06 | Wisconsin Alumni Research Foundation | Topcoat surfaces for directing the assembly of block copolymer films on chemically patterned surfaces |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
JP2014120526A (ja) * | 2012-12-13 | 2014-06-30 | Toshiba Corp | パターン形成方法及びインプリント用テンプレートの製造方法 |
US8656322B1 (en) | 2013-01-18 | 2014-02-18 | International Business Machines Corporation | Fin design level mask decomposition for directed self assembly |
US8822616B1 (en) * | 2013-02-08 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Block copolymer formulation and methods relating thereto |
US8822615B1 (en) * | 2013-02-08 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Block copolymer composition and methods relating thereto |
US8969207B2 (en) | 2013-03-13 | 2015-03-03 | Globalfoundries Inc. | Methods of forming a masking layer for patterning underlying structures |
US8906802B2 (en) | 2013-03-15 | 2014-12-09 | Globalfoundries Inc. | Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process |
JP5802233B2 (ja) | 2013-03-27 | 2015-10-28 | 株式会社東芝 | パターン形成方法 |
JP6478974B2 (ja) * | 2013-04-10 | 2019-03-06 | ケーエルエー−テンカー コーポレイション | 標的設計及び製造における誘導自己組織化 |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9064821B2 (en) | 2013-08-23 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co. Ltd. | Silicon dot formation by self-assembly method and selective silicon growth for flash memory |
US9281203B2 (en) * | 2013-08-23 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon dot formation by direct self-assembly method for flash memory |
JP5904981B2 (ja) * | 2013-09-09 | 2016-04-20 | 株式会社東芝 | パターン形成方法、磁気記録媒体の製造方法、及び磁気記録媒体 |
FR3010413B1 (fr) * | 2013-09-09 | 2015-09-25 | Arkema France | Procede de controle de la periode d'un assemblage nano-structure comprenant un melange de copolymeres a blocs |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
JP6249714B2 (ja) * | 2013-10-25 | 2017-12-20 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法 |
KR102364329B1 (ko) * | 2014-01-16 | 2022-02-17 | 브레우어 사이언스, 인코포레이션 | 유도 자가-조립용 하이-카이 블록 공중합체 |
TWI648320B (zh) * | 2014-01-23 | 2019-01-21 | 東京應化工業股份有限公司 | 含相分離結構之結構體之製造方法、圖型形成方法、微細圖型形成方法 |
JP6262044B2 (ja) | 2014-03-20 | 2018-01-17 | 株式会社東芝 | パターン形成方法および半導体装置の製造方法 |
JP6122906B2 (ja) * | 2014-06-27 | 2017-04-26 | ダウ グローバル テクノロジーズ エルエルシー | ブロックコポリマーを製造するための方法およびそれから製造される物品 |
US9715965B2 (en) | 2014-09-17 | 2017-07-25 | Arm Limited | Electrical component with random electrical characteristic |
CN104370274B (zh) * | 2014-11-10 | 2016-09-28 | 中国科学院长春应用化学研究所 | 纳米结构的引导组装方法 |
KR102335109B1 (ko) | 2014-12-15 | 2021-12-03 | 삼성전자 주식회사 | 미세 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법 |
US10011713B2 (en) * | 2014-12-30 | 2018-07-03 | Dow Global Technologies Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
US11021630B2 (en) | 2014-12-30 | 2021-06-01 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
US10294359B2 (en) * | 2014-12-30 | 2019-05-21 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
FR3031751B1 (fr) * | 2015-01-21 | 2018-10-05 | Arkema France | Procede de reduction des defauts dans un film ordonne de copolymere a blocs |
FR3031750B1 (fr) * | 2015-01-21 | 2018-09-28 | Arkema France | Procede d'obtention de films ordonnes epais et de periodes elevees comprenant un copolymere a blocs |
TWI627219B (zh) | 2015-02-26 | 2018-06-21 | 羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
TWI588200B (zh) * | 2015-02-26 | 2017-06-21 | 羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
TWI612379B (zh) * | 2015-02-26 | 2018-01-21 | Rohm And Haas Electronic Materials Llc | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
TWI669337B (zh) | 2015-02-26 | 2019-08-21 | 美商羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
CN109689779B (zh) * | 2016-09-13 | 2020-09-11 | 日产化学株式会社 | 上层膜形成用组合物和相分离图案制造方法 |
US20220236639A1 (en) * | 2021-01-22 | 2022-07-28 | Tokyo Electron Limited | Directed self-assembly |
WO2023048114A1 (ja) * | 2021-09-22 | 2023-03-30 | 東京応化工業株式会社 | 相分離構造形成用樹脂組成物、及び、相分離構造を含む構造体の製造方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US594470A (en) * | 1897-11-30 | Gerald w | ||
US3444732A (en) | 1967-06-06 | 1969-05-20 | Albert L Robbins | Method and apparatus for determining optimum bonding parameters for thermoplastic material |
US4235657A (en) | 1979-02-12 | 1980-11-25 | Kimberly Clark Corporation | Melt transfer web |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
JP3197507B2 (ja) | 1997-05-29 | 2001-08-13 | 科学技術振興事業団 | ポリマーのミクロ相分離構造体とその形成方法 |
JP3233883B2 (ja) * | 1997-08-29 | 2001-12-04 | 科学技術振興事業団 | 発色性高分子構造体とその製造方法 |
JP2001318201A (ja) * | 2000-05-11 | 2001-11-16 | Mitsubishi Chemicals Corp | 相分離材料 |
US6893705B2 (en) | 2001-05-25 | 2005-05-17 | Massachusetts Institute Of Technology | Large area orientation of block copolymer microdomains in thin films |
KR100473799B1 (ko) * | 2001-09-12 | 2005-03-07 | 학교법인 포항공과대학교 | 나노미터 수준의 고정밀 패턴 형성방법 |
KR100473800B1 (ko) * | 2001-09-12 | 2005-03-07 | 학교법인 포항공과대학교 | 저에너지 전자빔을 이용하는 고정밀 패턴 형성 방법 |
US6746825B2 (en) | 2001-10-05 | 2004-06-08 | Wisconsin Alumni Research Foundation | Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates |
SG102013A1 (en) | 2001-11-09 | 2004-02-27 | Inst Data Storage | Manufacturing method for high-density magnetic data storage media |
JP3967114B2 (ja) * | 2001-11-22 | 2007-08-29 | 株式会社東芝 | 加工方法 |
JP2003187972A (ja) | 2001-12-20 | 2003-07-04 | Dainippon Printing Co Ltd | 有機el素子の製造方法および有機el転写体と被転写体 |
JP3750640B2 (ja) * | 2002-08-22 | 2006-03-01 | セイコーエプソン株式会社 | 素子基板、電子装置、光学装置、及び電子機器 |
JP2004099667A (ja) * | 2002-09-05 | 2004-04-02 | Kansai Tlo Kk | 垂直配向ラメラ構造を有するブロック共重合体膜作製方法 |
TWI280260B (en) | 2003-01-17 | 2007-05-01 | Univ Nat Central | Polymer phase separation nano-structure and application thereof |
GB0326904D0 (en) | 2003-11-19 | 2003-12-24 | Koninkl Philips Electronics Nv | Formation of self-assembled monolayers |
US8025831B2 (en) | 2004-05-24 | 2011-09-27 | Agency For Science, Technology And Research | Imprinting of supported and free-standing 3-D micro- or nano-structures |
US8133534B2 (en) | 2004-11-22 | 2012-03-13 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
EP1827717A4 (en) | 2004-11-22 | 2011-11-23 | Wisconsin Alumni Res Found | METHOD AND COMPOSITIONS FOR FORMING APERIODICALLY PATTERNED COPOLYMER FILMS |
US7901607B2 (en) | 2005-02-17 | 2011-03-08 | Agency For Science, Technology And Research | Method of low temperature imprinting process with high pattern transfer yield |
US8168284B2 (en) | 2005-10-06 | 2012-05-01 | Wisconsin Alumni Research Foundation | Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates |
US8618221B2 (en) | 2005-10-14 | 2013-12-31 | Wisconsin Alumni Research Foundation | Directed assembly of triblock copolymers |
JP4665720B2 (ja) | 2005-11-01 | 2011-04-06 | 株式会社日立製作所 | パターン基板,パターン基板の製造方法、微細金型および磁気記録用パターン媒体 |
JP5136999B2 (ja) | 2005-11-18 | 2013-02-06 | 国立大学法人京都大学 | パターン基板の製造方法、パターン転写体、磁気記録用パターン媒体、及び高分子薄膜 |
JP4641321B2 (ja) | 2006-03-27 | 2011-03-02 | パイオニア株式会社 | パターン転写用モールド |
JP5414011B2 (ja) | 2006-05-23 | 2014-02-12 | 国立大学法人京都大学 | 微細構造体、パターン媒体、及びそれらの製造方法 |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
KR100929381B1 (ko) | 2007-11-22 | 2009-12-02 | 주식회사 미뉴타텍 | 몰드 시트 조성물 및 이를 이용한 몰드 시트 제조방법 |
US9183870B2 (en) | 2007-12-07 | 2015-11-10 | Wisconsin Alumni Research Foundation | Density multiplication and improved lithography by directed block copolymer assembly |
WO2009146086A2 (en) | 2008-04-01 | 2009-12-03 | Wisconsin Alumni Research Foundation | Molecular transfer printing using block copolymers |
JP5240859B2 (ja) | 2009-10-05 | 2013-07-17 | 日本特殊陶業株式会社 | 燃料加熱装置用ヒータ及びそのヒータを用いた燃料加熱装置 |
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- 2005-11-22 JP JP2007543480A patent/JP5377857B2/ja active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101540883B1 (ko) * | 2013-07-25 | 2015-07-30 | 아르끄마 프랑스 | 블록 공중합체 및 블록 중 하나의 (공)중합체의 배합물에서 수득한 형태를 특정화하는 구간을 제어하는 방법 |
KR101756921B1 (ko) | 2015-05-26 | 2017-07-11 | 고려대학교 산학협력단 | 성형 중합체 도입을 통한 수직 배향된 블록 공중합체 박막의 제조방법 |
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EP1827717A2 (en) | 2007-09-05 |
WO2006112887A3 (en) | 2007-07-12 |
US20060134556A1 (en) | 2006-06-22 |
EP1827717A4 (en) | 2011-11-23 |
US8287957B2 (en) | 2012-10-16 |
JP2008520450A (ja) | 2008-06-19 |
WO2006112887A2 (en) | 2006-10-26 |
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