KR101025079B1 - 집적 회로 다이 패키지 - Google Patents
집적 회로 다이 패키지 Download PDFInfo
- Publication number
- KR101025079B1 KR101025079B1 KR1020057013838A KR20057013838A KR101025079B1 KR 101025079 B1 KR101025079 B1 KR 101025079B1 KR 1020057013838 A KR1020057013838 A KR 1020057013838A KR 20057013838 A KR20057013838 A KR 20057013838A KR 101025079 B1 KR101025079 B1 KR 101025079B1
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- Prior art keywords
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- frame
- flange
- lead
- copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- 230000014759 maintenance of location Effects 0.000 claims abstract description 29
- 229920000106 Liquid crystal polymer Polymers 0.000 claims abstract description 19
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 48
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 239000010439 graphite Substances 0.000 claims description 24
- 229910002804 graphite Inorganic materials 0.000 claims description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000012815 thermoplastic material Substances 0.000 claims description 18
- 229920001169 thermoplastic Polymers 0.000 claims description 16
- 239000004416 thermosoftening plastic Substances 0.000 claims description 16
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 13
- 239000004593 Epoxy Substances 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003365 glass fiber Substances 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000000454 talc Substances 0.000 claims description 3
- 229910052623 talc Inorganic materials 0.000 claims description 3
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 claims description 2
- 229930185605 Bisphenol Natural products 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000009974 thixotropic effect Effects 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229920001897 terpolymer Polymers 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 238000005266 casting Methods 0.000 abstract description 14
- 150000001875 compounds Chemical class 0.000 abstract description 13
- 230000035515 penetration Effects 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 description 22
- 238000005476 soldering Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000005496 eutectics Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000001746 injection moulding Methods 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 3
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- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- BLNMQJJBQZSYTO-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu][Mo][Cu] BLNMQJJBQZSYTO-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 balls or lumps Chemical compound 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WABPQHHGFIMREM-NOHWODKXSA-N lead-200 Chemical compound [200Pb] WABPQHHGFIMREM-NOHWODKXSA-N 0.000 description 1
- 235000011475 lollipops Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004023 plastic welding Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- GQKZRWSUJHVIPE-UHFFFAOYSA-N sec-amyl acetate Natural products CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000002594 sorbent Substances 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L2224/325—Material
- H01L2224/32505—Material outside the bonding interface, e.g. in the bulk of the layer connector
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/852—Applying energy for connecting
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Abstract
Description
Claims (173)
- 회로 패키지로서,플랜지;적어도 하나의 리드; 및상기 플랜지 및 상기 적어도 하나의 리드에 주조되는 프레임을 포함하며, 상기 적어도 하나의 리드는 상기 프레임을 지나 연장되며, 상기 프레임은 340℃ 이상의 용융 온도를 갖는 열가소성 재료를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 프레임은 키 프로파일을 갖는 키를 포함하며, 상기 플랜지는 상기 키 프로파일을 보완하는 연동(interlock) 프로파일을 갖는 연동 피쳐를 형성하며, 상기 키는 상기 연동 피쳐와 긴밀하게 접촉되는, 회로 패키지.
- 제 2 항에 있어서,상기 연동 프로파일은 도브테일(dovetail) 형상인, 회로 패키지.
- 제 2 항에 있어서,상기 연동 프로파일은 T자 형상인, 회로 패키지.
- 제 2 항에 있어서,상기 연동 프로파일은 L자 형상인, 회로 패키지.
- 제 2 항에 있어서,상기 연동 피쳐는 상기 플랜지내의 그루브(groove)인, 회로 패키지.
- 제 2 항에 있어서,상기 연동 피쳐는 상기 플랜지의 표면에 기립되어 지탱되는(stand proud), 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 그를 관통하는 적어도 하나의 홀을 형성하며, 상기 열가소성 프레임 재료의 일부는 상기 홀을 지나 연장되는, 회로 패키지.
- 제 8 항에 있어서,상기 적어도 하나의 홀은 직사각형인, 회로 패키지.
- 제 8 항에 있어서,상기 적어도 하나의 홀은 다수의 홀들을 포함하는, 회로 패키지.
- 제 8 항에 있어서,상기 적어도 하나의 홀을 통과하는 상기 적어도 하나의 리드의 측방 단면에서, 상기 적어도 하나의 홀의 단면적은 상기 적어도 하나의 리드의 단면적의 25% 이하인, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 그의 하나의 단부 부근에 보유 피쳐를 포함하고, 상기 보유 피쳐는 바깥쪽을 면하는 부분을 포함하며, 상기 열가소성 프레임 재료의 일부는 상기 보유 피쳐의 상기 바깥쪽을 면하는 부분과 접하는, 회로 패키지.
- 제 12 항에 있어서,상기 보유 피쳐는 후크형 에지를 포함하는, 회로 패키지.
- 제 12 항에 있어서,상기 보유 피쳐는 리지(ridge)를 포함하는, 회로 패키지.
- 제 12 항에 있어서,상기 보유 피쳐는 그루브를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 그의 한쪽 단부 부근에 보유 피쳐를 포함하며, 상기 열가소성 프레임 재료의 일부는 상기 보유 피쳐와 접하는, 회로 패키지.
- 제 16 항에 있어서,상기 보유 피쳐는 후크형 에지인, 회로 패키지.
- 제 16 항에 있어서,상기 보유 피쳐는 리지인, 회로 패키지.
- 제 16 항에 있어서,상기 보유 피쳐는 그루브인, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 볼록한 바닥부 표면을 포함하는, 회로 패키지.
- 제 20 항에 있어서,상기 바닥부 표면의 볼록도(convexity)는 적어도 0.0001 인치인, 회로 패키지.
- 제 20 항에 있어서,상기 바닥부 표면의 볼록도는 0.0005 내지 0.0010 인치 사이인, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 적어도 50%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 적어도 90%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 적어도 98%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 지르코늄 및 은을 포함하는 그룹에서 선택된 적어도 하나의 재료 및 구리의 합금을 포함하는, 회로 패키지.
- 제 26 항에 있어서,상기 합금은 적어도 98%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 0.05% 내지 1.5% 사이의 지르코늄 및 적어도 98.5%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 0.05% 내지 1.5% 사이의 지르코늄 및 나머지는 구리(balance copper)를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지는 0.085%의 은 및 적어도 99.9%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 적어도 50%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 적어도 97%의 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는 철, 인, 아연, 지르코늄, 코발트, 주석, 마그네슘, 니켈, 크롬, 티타늄 및 실리콘을 포함하는 그룹에서 선택된 적어도 하나의 재료와 구리의 합금을 포함하는, 회로 패키지.
- 제 33 항에 있어서,상기 합금은 적어도 97%의 구리를 함유하는, 회로 패키지.
- 제 1 항에 있어서,상기 적어도 하나의 리드는, 2.1% 내지 2.6% 사이의 철; 0.015% 내지 0.15% 사이의 인; 0.05% 내지 0.2% 사이의 아연; 및 나머지는 구리를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 액정 폴리머를 포함하는, 회로 패키지.
- 제 36 항에 있어서,상기 액정 폴리머는 파라-히드록시벤조산, 비스페놀 및 프탈산을 포함하는, 회로 패키지.
- 제 36 항에 있어서,상기 액정 폴리머는, p-히드록시벤조산의 코폴리머 및 6-히드록시-2-나프탈산을 포함하는, 회로 패키지.
- 제 36 항에 있어서,상기 액정 폴리머는 히드록시벤조산, 4-4-비스페놀 및 테레프탈산의 테라폴리머들을 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 상기 적어도 하나의 리드의 열팽창 계수의 60% 이내의 열팽창 계수를 갖는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 7ppm/℃ 내지 22ppm/℃ 사이의 열팽창 계수를 갖는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 2 내지 3 마이크론 사이의 직경의 30% 내지 45% 사이의 탈크 볼들(talc balls)을 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 30% 내지 50% 사이의 유리 섬유를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 열가소성 재료는 다수의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 44 항에 있어서,상기 열가소성 재료는 10% 내지 70% 사이의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 44 항에 있어서,상기 열가소성 재료는 40% 내지 50% 사이의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 44 항에 있어서,상기 그래파이트 박편들은 다수의 층들을 형성하는, 회로 패키지.
- 제 47 항에 있어서,상기 그래파이트 박편들은 상기 프레임의 선택된 표면에 평행하게 배향되는, 회로 패키지.
- 제 1 항에 있어서,상기 프레임에 부착된 열가소성 재료의 뚜껑을 더 포함하는, 회로 패키지.
- 제 49 항에 있어서,상기 플랜지, 상기 프레임 및 상기 뚜껑은 에어 캐비티를 형성하는, 회로 패키지.
- 제 49 항에 있어서,상기 뚜껑은 상기 프레임에 용접되는, 회로 패키지.
- 제 49 항에 있어서,상기 열가소성 재료는 액정 폴리머를 포함하는, 회로 패키지.
- 제 52 항에 있어서,상기 플랜지에 부착되며 상기 적어도 하나의 리드에 전기적으로 결합되는 반도체 다이를 더 포함하는, 회로 패키지.
- 제 52 항에 있어서,상기 열가소성 재료는 다수의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 54 항에 있어서,상기 열가소성 재료는 10% 내지 70% 사이의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 54 항에 있어서,상기 열가소성 재료는 40% 내지 50% 사이의 그래파이트 박편들을 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 플랜지에 부착되고 상기 적어도 하나의 리드에 전기적으로 결합되는 반도체 다이를 더 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 프레임은 상기 플랜지의 표면에 인접한 에지를 포함하며, 상기 회로 패키지는 상기 에지의 적어도 일부를 따라 상기 프레임 및 상기 플랜지에 부착된 시일(seal)을 더 포함하는, 회로 패키지.
- 제 58 항에 있어서,상기 시일은 에폭시를 포함하는, 회로 패키지.
- 제 58 항에 있어서,상기 시일은 실리콘을 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 프레임은 상기 적어도 하나의 리드의 제 1 표면에 인접한 제 1 에지를 포함하며, 상기 회로 패키지는 상기 제 1 에지의 적어도 일부를 따라 상기 프레임 및 상기 적어도 하나의 리드에 부착된 제 1 시일을 더 포함하는, 회로 패키지.
- 제 61 항에 있어서,상기 프레임은 상기 적어도 하나의 리드의 제 2 표면에 인접한 제 2 에지를 포함하며, 상기 회로 패키지는 상기 제 2 에지의 적어도 일부를 따라 상기 적어도 하나의 리드 및 상기 프레임에 부착된 제 2 시일을 더 포함하는, 회로 패키지.
- 제 62 항에 있어서,상기 프레임은 상기 플랜지의 표면에 인접한 제 3 에지를 포함하며, 상기 회로 패키지는 상기 제 3 에지의 적어도 일부를 따라 상기 프레임과 상기 플랜지에 부착된 제 3 시일을 더 포함하는, 회로 패키지.
- 제 63 항에 있어서,상기 시일은 에폭시를 포함하는, 회로 패키지.
- 제 63 항에 있어서,상기 시일은 실리콘을 포함하는, 회로 패키지.
- 제 63 항에 있어서,상기 시일은, 3.5 내지 4.6 사이의 요변도(thixotropic index); 7.4 내지 3 Pa.s 사이의 캐손 점도(cason viscosity); 초당 0.95의 전단율(shear rate)에서 58 내지 125 Pa.s 사이의 점도; 및 초당 9.5의 전단율에서 12 내지 30 Pa.s 사이의 점도를 갖는 재료를 포함하는, 회로 패키지.
- 제 1 항에 있어서,상기 프레임의 표면상에 수분 장벽막을 더 포함하는, 회로 패키지.
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