JP6375584B2 - 電子部品搭載用パッケージ - Google Patents
電子部品搭載用パッケージ Download PDFInfo
- Publication number
- JP6375584B2 JP6375584B2 JP2014071282A JP2014071282A JP6375584B2 JP 6375584 B2 JP6375584 B2 JP 6375584B2 JP 2014071282 A JP2014071282 A JP 2014071282A JP 2014071282 A JP2014071282 A JP 2014071282A JP 6375584 B2 JP6375584 B2 JP 6375584B2
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- lead terminal
- dielectric
- conductive layer
- base portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000005219 brazing Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
最初に本願発明の実施形態の内容を列記して説明する。本願発明の一実施形態は、金属製のベース部と、ベース部の側面に設けられ、ベース部の主面から底面に達する凹部と、ベース部の主面上に、電子部品を囲んで設けられた枠部と、誘電体と、誘電体上に位置し、枠部の内側と外側との間を電気的に接続する導電層とを有するフィードスルー部と、導電層に接続されたリード端子と、を備え、リード端子および導電層と重なる領域に位置しており、リード端子及び導電層と凹部との間には、誘電体が介在している、電子部品搭載用パッケージである。
以下、添付図面を参照して、本発明の好適な実施形態について詳細に説明する。なお、以下の説明において、同一要素又は同一機能を有する要素には、同一符号を用いることとし、重複する説明は省略する。
Claims (2)
- 金属製のベース部と、
前記ベース部の側面に設けられ、前記ベース部の主面から底面に達する凹部と、
前記ベース部の主面上に、電子部品を囲んで設けられた枠部と、
前記枠部の内側と外側を通じて配置された誘電体と、前記誘電体上に位置し、前記枠部の内側と外側との間を電気的に接続する導電層とを有するフィードスルー部と、
前記導電層に接続されたリード端子と、
を備え、
前記凹部は、前記リード端子および前記導電層と重なる領域に位置しており、前記リード端子及び前記導電層と前記凹部との間には、前記誘電体が介在しており、
前記リード端子は、前記誘電体の端部において、前記ベース部から離れる方向に湾曲している電子部品搭載用パッケージ。 - 前記導電層の端部は、前記誘電体の端部よりも内側に位置し、
前記リード端子は、前記導電層の端部よりも外側へ向かって延在しており、
前記導電層の端部よりも外側において、前記リード端子と前記誘電体との間に空隙が介在してなる請求項1に記載の電子部品搭載用パッケージ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014071282A JP6375584B2 (ja) | 2014-03-31 | 2014-03-31 | 電子部品搭載用パッケージ |
US14/673,328 US9437509B2 (en) | 2014-03-31 | 2015-03-30 | Package for electronic components suppressing multipactor discharge |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014071282A JP6375584B2 (ja) | 2014-03-31 | 2014-03-31 | 電子部品搭載用パッケージ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015195237A JP2015195237A (ja) | 2015-11-05 |
JP2015195237A5 JP2015195237A5 (ja) | 2017-06-01 |
JP6375584B2 true JP6375584B2 (ja) | 2018-08-22 |
Family
ID=54192477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014071282A Active JP6375584B2 (ja) | 2014-03-31 | 2014-03-31 | 電子部品搭載用パッケージ |
Country Status (2)
Country | Link |
---|---|
US (1) | US9437509B2 (ja) |
JP (1) | JP6375584B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112753144B (zh) * | 2018-12-26 | 2024-07-19 | 住友电工光电子器件创新株式会社 | 光学半导体装置 |
CN112614900B (zh) * | 2020-11-27 | 2022-08-30 | 中国电子科技集团公司第十三研究所 | 一种光导开关封装结构 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS571250A (en) * | 1980-06-03 | 1982-01-06 | Nec Corp | Equipping structure of outside lead |
US4451540A (en) * | 1982-08-30 | 1984-05-29 | Isotronics, Inc. | System for packaging of electronic circuits |
US4649229A (en) * | 1985-08-12 | 1987-03-10 | Aegis, Inc. | All metal flat package for microcircuitry |
JP3009788B2 (ja) * | 1991-11-15 | 2000-02-14 | 日本特殊陶業株式会社 | 集積回路用パッケージ |
US5528079A (en) * | 1991-12-23 | 1996-06-18 | Gi Corporation | Hermetic surface mount package for a two terminal semiconductor device |
JP2854460B2 (ja) * | 1992-05-28 | 1999-02-03 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JPH0613513A (ja) | 1992-06-26 | 1994-01-21 | Fujitsu Ltd | マイクロ波半導体装置 |
US5880403A (en) * | 1994-04-01 | 1999-03-09 | Space Electronics, Inc. | Radiation shielding of three dimensional multi-chip modules |
US5700724A (en) * | 1994-08-02 | 1997-12-23 | Philips Electronic North America Corporation | Hermetically sealed package for a high power hybrid circuit |
US5750926A (en) * | 1995-08-16 | 1998-05-12 | Alfred E. Mann Foundation For Scientific Research | Hermetically sealed electrical feedthrough for use with implantable electronic devices |
US5792984A (en) * | 1996-07-01 | 1998-08-11 | Cts Corporation | Molded aluminum nitride packages |
JP4058172B2 (ja) * | 1997-12-02 | 2008-03-05 | 株式会社住友金属エレクトロデバイス | 光半導体素子収納用パッケージ |
US6204448B1 (en) * | 1998-12-04 | 2001-03-20 | Kyocera America, Inc. | High frequency microwave packaging having a dielectric gap |
JP4494587B2 (ja) * | 2000-05-11 | 2010-06-30 | 古河電気工業株式会社 | 光半導体素子用パッケージおよび前記パッケージを用いた光半導体素子モジュール |
JP2003249584A (ja) * | 2002-02-25 | 2003-09-05 | Kyocera Corp | 半導体素子収納用パッケージおよび半導体装置 |
SG157957A1 (en) * | 2003-01-29 | 2010-01-29 | Interplex Qlp Inc | Package for integrated circuit die |
JP4480598B2 (ja) * | 2004-02-26 | 2010-06-16 | 京セラ株式会社 | 電子部品収納用パッケージおよび電子装置 |
US7446411B2 (en) * | 2005-10-24 | 2008-11-04 | Freescale Semiconductor, Inc. | Semiconductor structure and method of assembly |
JP4817924B2 (ja) * | 2006-03-29 | 2011-11-16 | 株式会社東芝 | 半導体パッケージ |
JP2009076499A (ja) * | 2007-09-18 | 2009-04-09 | Toshiba Corp | リード付基板、半導体パッケージ、及びリード付基板の製造方法 |
FR2949939A1 (fr) * | 2009-09-04 | 2011-03-11 | Thales Sa | Traversee d'une paroi d'un boitier |
JP5812671B2 (ja) * | 2011-04-28 | 2015-11-17 | 京セラ株式会社 | 素子収納用パッケージおよびこれを備えた半導体装置 |
-
2014
- 2014-03-31 JP JP2014071282A patent/JP6375584B2/ja active Active
-
2015
- 2015-03-30 US US14/673,328 patent/US9437509B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20150282357A1 (en) | 2015-10-01 |
JP2015195237A (ja) | 2015-11-05 |
US9437509B2 (en) | 2016-09-06 |
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