KR100594327B1 - 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 - Google Patents

라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 Download PDF

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KR100594327B1
KR100594327B1 KR1020050024543A KR20050024543A KR100594327B1 KR 100594327 B1 KR100594327 B1 KR 100594327B1 KR 1020050024543 A KR1020050024543 A KR 1020050024543A KR 20050024543 A KR20050024543 A KR 20050024543A KR 100594327 B1 KR100594327 B1 KR 100594327B1
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semiconductor device
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semiconductor
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이성영
신동석
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삼성전자주식회사
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Priority to KR1020050024543A priority Critical patent/KR100594327B1/ko
Priority to US11/303,408 priority patent/US7642578B2/en
Priority to TW095107031A priority patent/TWI305385B/zh
Priority to DE102006012416A priority patent/DE102006012416B4/de
Priority to CN200610071765XA priority patent/CN1855390B/zh
Priority to JP2006083846A priority patent/JP2006270107A/ja
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Publication of KR100594327B1 publication Critical patent/KR100594327B1/ko
Priority to US12/623,970 priority patent/US8110471B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
    • H10D30/6213—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections having rounded corners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020050024543A 2005-03-24 2005-03-24 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 Expired - Fee Related KR100594327B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020050024543A KR100594327B1 (ko) 2005-03-24 2005-03-24 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
US11/303,408 US7642578B2 (en) 2005-03-24 2005-12-16 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
TW095107031A TWI305385B (en) 2005-03-24 2006-03-02 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
DE102006012416A DE102006012416B4 (de) 2005-03-24 2006-03-17 Halbleiterbauelement (FET) mit einem runden Nano-Leitungstransistorkanal
CN200610071765XA CN1855390B (zh) 2005-03-24 2006-03-23 具有圆形形状的纳米线晶体管沟道的半导体器件及其制造方法
JP2006083846A JP2006270107A (ja) 2005-03-24 2006-03-24 ラウンド状のナノワイヤートランジスタチャンネルを備える半導体素子及びその製造方法
US12/623,970 US8110471B2 (en) 2005-03-24 2009-11-23 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050024543A KR100594327B1 (ko) 2005-03-24 2005-03-24 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법

Publications (1)

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KR100594327B1 true KR100594327B1 (ko) 2006-06-30

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KR1020050024543A Expired - Fee Related KR100594327B1 (ko) 2005-03-24 2005-03-24 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법

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US (2) US7642578B2 (https=)
JP (1) JP2006270107A (https=)
KR (1) KR100594327B1 (https=)
CN (1) CN1855390B (https=)
DE (1) DE102006012416B4 (https=)
TW (1) TWI305385B (https=)

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US8106464B2 (en) 2008-09-05 2012-01-31 Samsung Electronics Co., Ltd. Semiconductor device having bar type active pattern
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KR101356694B1 (ko) 2007-05-10 2014-01-29 삼성전자주식회사 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법
KR101406224B1 (ko) * 2007-10-26 2014-06-12 삼성전자주식회사 나노 와이어 트랜지스터 및 그 제조 방법
US8790998B2 (en) 2008-12-16 2014-07-29 Samsung Electronics Co., Ltd. Method of forming core-shell type structure and method of manufacturing transistor using the same
US9397179B1 (en) 2015-02-17 2016-07-19 Samsung Electronics Co., Ltd. Semiconductor device
KR20160087357A (ko) * 2015-01-13 2016-07-21 도쿄엘렉트론가부시키가이샤 나노와이어 구조물을 형성하는 방법
KR101802055B1 (ko) 2016-02-16 2017-11-27 한국과학기술원 수직 집적 전면-게이트 다층 나노선 채널 기반의 무접합 트랜지스터 및 그 제작 방법
US9871101B2 (en) 2014-09-16 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
TWI618127B (zh) * 2012-09-27 2018-03-11 英特爾股份有限公司 具有含低帶隙包覆層之通道區的非平面半導體裝置
KR20200055663A (ko) * 2018-11-13 2020-05-21 어플라이드 머티어리얼스, 인코포레이티드 통합 반도체 처리
KR20200141697A (ko) * 2019-06-11 2020-12-21 삼성전자주식회사 반도체 장치

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KR102436637B1 (ko) 2015-01-13 2022-08-25 도쿄엘렉트론가부시키가이샤 나노와이어 구조물을 형성하는 방법
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KR102803400B1 (ko) 2019-06-11 2025-05-02 삼성전자주식회사 반도체 장치

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TW200711001A (en) 2007-03-16
JP2006270107A (ja) 2006-10-05
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US8110471B2 (en) 2012-02-07
US20060216897A1 (en) 2006-09-28
CN1855390A (zh) 2006-11-01
US7642578B2 (en) 2010-01-05

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