JP5798364B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5798364B2
JP5798364B2 JP2011094997A JP2011094997A JP5798364B2 JP 5798364 B2 JP5798364 B2 JP 5798364B2 JP 2011094997 A JP2011094997 A JP 2011094997A JP 2011094997 A JP2011094997 A JP 2011094997A JP 5798364 B2 JP5798364 B2 JP 5798364B2
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insulating film
film
oxide semiconductor
oxygen
semiconductor film
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JP2011243974A5 (enExample
JP2011243974A (ja
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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JP2011094997A 2010-04-23 2011-04-21 半導体装置の作製方法 Active JP5798364B2 (ja)

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JP2011094997A JP5798364B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

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JP2010100241 2010-04-23
JP2010100241 2010-04-23
JP2011094997A JP5798364B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

Related Child Applications (4)

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JP2012199173A Division JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Division JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Division JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Division JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法

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JP2011243974A JP2011243974A (ja) 2011-12-01
JP2011243974A5 JP2011243974A5 (enExample) 2014-05-08
JP5798364B2 true JP5798364B2 (ja) 2015-10-21

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JP2011094997A Active JP5798364B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法
JP2012199173A Active JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Expired - Fee Related JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Active JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Withdrawn JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法
JP2016229211A Active JP6306674B2 (ja) 2010-04-23 2016-11-25 半導体装置の作製方法

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JP2012199173A Active JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Expired - Fee Related JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Active JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Withdrawn JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法
JP2016229211A Active JP6306674B2 (ja) 2010-04-23 2016-11-25 半導体装置の作製方法

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US (5) US8530289B2 (enExample)
JP (6) JP5798364B2 (enExample)
KR (5) KR101854421B1 (enExample)
CN (4) CN104851810B (enExample)
DE (2) DE112011106082B3 (enExample)
TW (3) TWI419209B (enExample)
WO (1) WO2011132529A1 (enExample)

Families Citing this family (102)

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JP5111867B2 (ja) * 2007-01-16 2013-01-09 株式会社ジャパンディスプレイイースト 表示装置
KR102365458B1 (ko) 2009-07-03 2022-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20130054275A (ko) 2010-04-23 2013-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN104851810B (zh) * 2010-04-23 2018-08-28 株式会社半导体能源研究所 半导体装置的制造方法
KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101324760B1 (ko) 2010-04-23 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102906882B (zh) 2010-05-21 2015-11-25 株式会社半导体能源研究所 半导体装置及其制造方法
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002040A1 (en) 2010-07-01 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
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US8530289B2 (en) 2013-09-10
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TW201403689A (zh) 2014-01-16
US8895377B2 (en) 2014-11-25
CN102859703B (zh) 2015-12-02
JP2014135496A (ja) 2014-07-24
JP6306674B2 (ja) 2018-04-04
KR101974927B1 (ko) 2019-05-03
CN105321961B (zh) 2018-10-02
JP2016015500A (ja) 2016-01-28

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