JP5798364B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5798364B2
JP5798364B2 JP2011094997A JP2011094997A JP5798364B2 JP 5798364 B2 JP5798364 B2 JP 5798364B2 JP 2011094997 A JP2011094997 A JP 2011094997A JP 2011094997 A JP2011094997 A JP 2011094997A JP 5798364 B2 JP5798364 B2 JP 5798364B2
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insulating film
film
oxide semiconductor
oxygen
semiconductor film
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JP2011243974A (ja
JP2011243974A5 (enExample
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
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    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
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    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
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    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2011094997A 2010-04-23 2011-04-21 半導体装置の作製方法 Active JP5798364B2 (ja)

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JP2010100241 2010-04-23
JP2010100241 2010-04-23
JP2011094997A JP5798364B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

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JP2012199173A Division JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Division JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Division JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Division JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法

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JP2011243974A JP2011243974A (ja) 2011-12-01
JP2011243974A5 JP2011243974A5 (enExample) 2014-05-08
JP5798364B2 true JP5798364B2 (ja) 2015-10-21

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JP2011094997A Active JP5798364B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法
JP2012199173A Active JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Expired - Fee Related JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Active JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Withdrawn JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法
JP2016229211A Active JP6306674B2 (ja) 2010-04-23 2016-11-25 半導体装置の作製方法

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JP2012199173A Active JP5128001B2 (ja) 2010-04-23 2012-09-11 半導体装置の作製方法
JP2014029386A Expired - Fee Related JP5750174B2 (ja) 2010-04-23 2014-02-19 半導体装置の作製方法
JP2014109916A Active JP5634634B2 (ja) 2010-04-23 2014-05-28 半導体装置の作製方法
JP2015163345A Withdrawn JP2016015500A (ja) 2010-04-23 2015-08-21 半導体装置の作製方法
JP2016229211A Active JP6306674B2 (ja) 2010-04-23 2016-11-25 半導体装置の作製方法

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US (5) US8530289B2 (enExample)
JP (6) JP5798364B2 (enExample)
KR (5) KR101754380B1 (enExample)
CN (4) CN105321961B (enExample)
DE (2) DE112011101395B4 (enExample)
TW (3) TWI419209B (enExample)
WO (1) WO2011132529A1 (enExample)

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JP5111867B2 (ja) 2007-01-16 2013-01-09 株式会社ジャパンディスプレイイースト 表示装置
KR102096109B1 (ko) 2009-07-03 2020-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN111326435B (zh) 2010-04-23 2023-12-01 株式会社半导体能源研究所 半导体装置的制造方法
DE112011101410B4 (de) 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
DE112011101395B4 (de) * 2010-04-23 2014-10-16 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
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WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
CN102760697B (zh) 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
JP6125211B2 (ja) * 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8951899B2 (en) * 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
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TWI613824B (zh) * 2011-12-23 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102097171B1 (ko) * 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6080563B2 (ja) * 2012-01-23 2017-02-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102412138B1 (ko) 2012-01-25 2022-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6091905B2 (ja) * 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
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TWI604609B (zh) 2012-02-02 2017-11-01 半導體能源研究所股份有限公司 半導體裝置
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