JP5501586B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5501586B2 JP5501586B2 JP2008213563A JP2008213563A JP5501586B2 JP 5501586 B2 JP5501586 B2 JP 5501586B2 JP 2008213563 A JP2008213563 A JP 2008213563A JP 2008213563 A JP2008213563 A JP 2008213563A JP 5501586 B2 JP5501586 B2 JP 5501586B2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
以下、工程断面図に基づいて、実施の形態1に係る半導体装置の製造方法について説明する。
以下、工程断面図に基づいて、実施の形態2に係る半導体装置の製造方法について説明する。
Claims (4)
- (A)半導体基板上の第一層間膜内に、溝を形成する工程と、
(B)前記溝の底面と側面とに、銅と第一金属元素とを含有する銅合金層を形成する工程と、
(C)前記銅合金層上に、前記溝を埋め込むように、銅層を形成する工程と、
(D)前記銅層の酸化が行われない第一雰囲気中にて第一熱処理を行うことにより、前記銅層を、銅と前記第一金属元素との合金で構成される銅合金金属層にする工程と、
(E)前記溝の外側の前記銅合金金属層を除去することにより、前記溝内に配線を形成する工程と、
(F)酸素を含有する第二雰囲気中にて第二熱処理を行うことにより、前記配線表面に、前記第一金属元素の酸化物である酸化物層を形成する工程とを、備え、
(G)前記工程(F)の後に、前記第一層間膜上および前記酸化物層上に、金属拡散防止膜を形成する工程と、
(H)前記金属拡散防止膜上に、第二層間膜を形成する工程と、
(I)前記酸化物層が露出するように、前記第二層間膜および前記金属拡散防止膜を貫通した第一ホールを形成する工程とを、さらに備え、
(J)前記工程(A)と前記工程(B)との間に実施される、前記溝の底面と側面とに第一バリアメタルを形成する工程と、
(K)前記第一ホールの側面と底面とに第二バリアメタルを形成する工程とを、さらに備え、
(L)前記工程(I)の後に、プラズマ処理、ウエット処理のいずれかの処理により、前記第一ホール直下の前記酸化物層を除去する工程を、さらに備える、
ことを特徴とする半導体装置の製造方法。 - 前記第一金属元素は、
アルミニウム、チタン、マンガン、スズ、銀、マグネシウムのいずれかを含む、金属元素である、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第一雰囲気は、
不活性ガス、窒素ガスおよび水素ガスのいずれかを含む混合ガス雰囲気、または、真空中である、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記金属拡散防止膜は、
シリコンと窒素との化合物、SiCO、SiCのいずれかを含む絶縁膜である、
ことを特徴とする請求項1に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2008213563A JP5501586B2 (ja) | 2008-08-22 | 2008-08-22 | 半導体装置の製造方法 |
US12/481,234 US8125085B2 (en) | 2008-08-22 | 2009-06-09 | Semiconductor device having wiring with oxide layer of impurity from the wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008213563A JP5501586B2 (ja) | 2008-08-22 | 2008-08-22 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010050303A JP2010050303A (ja) | 2010-03-04 |
JP5501586B2 true JP5501586B2 (ja) | 2014-05-21 |
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JP2008213563A Active JP5501586B2 (ja) | 2008-08-22 | 2008-08-22 | 半導体装置の製造方法 |
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US (1) | US8125085B2 (ja) |
JP (1) | JP5501586B2 (ja) |
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JP4589835B2 (ja) * | 2005-07-13 | 2010-12-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
JP2007059734A (ja) * | 2005-08-26 | 2007-03-08 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP4236201B2 (ja) | 2005-08-30 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007180407A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP5010265B2 (ja) * | 2006-12-18 | 2012-08-29 | 株式会社東芝 | 半導体装置の製造方法 |
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